1 - 2 |
3rd International Conference on Spectroscopic Ellipsometry, 2003 -Preface Fried M, Hingerl K, Humlicek J |
3 - 13 |
Expanding horizons: new developments in ellipsometry and polarimetry Aspnes DE |
14 - 23 |
Multichannel Mueller matrix ellipsometer based on the dual rotating compensator principle Chen C, An I, Ferreira GM, Podraza NJ, Zapien JA, Collins RW |
24 - 32 |
Spectroscopic ellipsometry using the grating division-of-amplitude photopolarimeter (G-DOAP) Krishnan S, Hampton S, Azzam RMA |
33 - 38 |
Comparison of the capabilities of rotating-analyzer and rotating-compensator ellipsometers by measurements on a single system Mori T, Aspnes DE |
39 - 42 |
Generalized magneto-optical ellipsometry in ferromagnetic metals Neuber G, Rauer R, Kunze J, Backstrom J, Rubhausen M |
43 - 49 |
Mueller matrix spectroscopic ellipsometry: formulation and application Laskarakis A, Logothetidis S, Pavlopoulou E, Gioti A |
50 - 53 |
Optical anisotropy relevant to rotating-compensator polarimeters: application to the monoplate retarder Asar M, Aspnes DE |
54 - 60 |
Prism spectroscopic ellipsometer Azzam RMA, Sudradjat FF, Uddin MN |
61 - 65 |
Accurate calibration and optimized measurement: use of an achromatic compensator in rotating polarizer spectroscopic ellipsometry Broch L, Naciri AE, Johann L |
66 - 71 |
Precision in ellipsometrically determined sample parameters: simulation and experiment Johs B, Herzinger CM |
72 - 77 |
Precision auto-alignment for incident angle of an ellipsometer using specimen stage Park S, Gweon DG, Kim YD |
78 - 83 |
In situ calibration technique for photoelastic modulator in ellipsometry Wang MW, Tsai FH, Chao YF |
84 - 89 |
New design of a spectroscopic ellipsometer by using a spectrometer with multiple gratings and a two-dimensional CCD array detector You HY, Jia JH, Chen JK, Han T, Ni WM, Wang SY, Li J, Zhang RJ, Yang YM, Chen LY, Lynch DW |
90 - 94 |
Photo-interferometric spectroscopic ellipsometry Martinez-Anton JC, Esteban O |
95 - 100 |
Evaluation of ellipsometric measurements using complex strategies Polgar O, Fried M, Lohner T, Barsony I |
101 - 105 |
Error function for interpretations of ellipsometric measurements Polovinkin VG |
106 - 111 |
Application of spectral and temporal weighted error functions for data analysis in real-time spectroscopic ellipsometry Zapien JA, Ferlauto AS, Collins RW |
112 - 119 |
General methods for optimized design and calibration of Mueller polarimeters De Martino A, Garcia-Caurel E, Laude B, Drevillon B |
120 - 123 |
Spectroscopic Mueller polarimeter based on liquid crystal devices Garcia-Caurel E, De Martino A, Drevillon B |
124 - 131 |
Optical properties of anisotropic materials: an experimental approach Alonso MI, Garriga M |
132 - 137 |
Calibration and data reduction for a UV-extended rotating-compensator multichannel ellipsometer An I, Zapien JA, Chen C, Ferlauto AS, Lawrence AS, Collins RW |
138 - 142 |
Development and test of a new grating-polarimeter and its application in ellipsometric measurements Masetti E, Krasilnikova A |
143 - 149 |
Far-infrared ellipsometry using a synchrotron light source - the dielectric response of the cuprate high T-c superconductors Bernhard C, Humlicek J, Keimer B |
150 - 156 |
Infrared spectroscopic ellipsometry applied to the characterization of ultra shallow junction on silicon and SOI Defranoux C, Emeraud T, Bourtault S, Venturini J, Boher P, Hernandez M, Laviron C, Noguchi I |
157 - 160 |
Optical purity evaluation of the noble metal by the ellipsometric method Zhou P, Wang SY, Li J, Zhang RJ, You HY, Shen ZC, Chen LY |
161 - 166 |
Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry Bundesmann C, Ashkenov N, Schubert M, Rahm A, Wenckstern HV, Kaidashev EM, Lorenz M, Grundmann M |
167 - 171 |
FTIR phase-modulated ellipsometry characterization of hydrogenated amorphous silicon nitride thin films with embedded nanoparticles Canillas A, Pinyol A, Sancho-Parramon J, Ferre-Borrull J, Bertran E |
172 - 176 |
Infrared study of YBa2Cu3O7/La0.67Ca0.33MnO3 superlattices Dubroka A, Cristiani G, Habermeier HU, Humlicek J |
177 - 182 |
Diffraction effects in infrared ellipsometry of conducting samples Humlicek J, Bernhard C |
183 - 186 |
Infrared ellipsometry of SiC/Si heterostructures with Ge modified interfaces Zgheib C, Forster C, Weih R, Cimalla V, Kazan M, Masri R, Ambacher O, Pezoldt J |
187 - 195 |
Optical properties of silicon carbide polytypes below and around bandgap Kildemo M |
196 - 200 |
Simultaneous determination of bulk isotropic and surface-induced anisotropic complex dielectric functions of semiconductors from high speed Mueller matrix ellipsometry Chen C, An I, Collins RW |
201 - 206 |
Optical characterization of aluminum-doped zinc oxide films by advanced dispersion theories Pflug A, Sittinger V, Ruske F, Szyszka B, Dittmar G |
207 - 212 |
Fine art painting characterization by spectroscopic ellipsometry: preliminary measurements on varnish layers Christofides C, Castellon B, Othonos A, Polikreti K, de Deyne C |
213 - 216 |
Optical properties study of MgB2 Chvostova D, Zelezny V, Pajasova L, Tarasenko A, Plecenik A, Kus P, Satrapinsky L |
217 - 221 |
Optical constants and interband transitions of Ge1-xSnx alloys (x < 0.2) grown on Si by UHV-CVD Cook CS, Zollner S, Bauer MR, Aella P, Kouvetakis J, Menendez J |
222 - 227 |
Parametric modeling of the dielectric functions of Cd1-xMgxTe alloy films Ihn YS, Kim TJ, Ghong TH, Kim YD, Aspnes DE, Kossut J |
228 - 230 |
Optical properties of ZnSe and Zn0.87Mn0.13Se epilayers determined by spectroscopic ellipsometry Kvietkova J, Daniel B, Hetterich M, Schubert M, Spemann D |
231 - 234 |
Hydrogen implantation in InGaNAs studied by spectroscopic ellipsometry Leibiger G, Gottschalch V, Razek N, Schindler A, Schubert M |
235 - 238 |
Infrared to vacuum ultraviolet optical properties of 3C, 4H, and 6H silicon carbide measured by spectroscopic ellipsometry Lindquist OPA, Schubert M, Arwin H, Jarrendahl K |
239 - 243 |
Ion implantation-caused damage in SiC measured by spectroscopic ellipsometry Petrik P, Shaaban ER, Lohner T, Battistig G, Fried M, Lopez JG, Morilla Y, Polgar O, Gyulai J |
244 - 247 |
Phase-modulated spectroscopic ellipsometry and polarized transmission intensity studies of wide-gap biaxial CaGa2S4 Shim YG, Mamedov N, Yamamoto N |
248 - 255 |
Optical properties of bulk c-ZrO2, c-MgO and a-AS(2)S(3) determined by variable angle spectroscopic ellipsometry Synowicki RA, Tiwald TE |
256 - 260 |
IR ellipsometry and photoluminescence investigations of Zn1-xBexSe and Zn1-x-yBexMnySe mixed crystals Wronkowska AA, Bejtka K, Arwin H, Wronkowski A, Firszt E, Legowski S, Meczynska H, Marasek A |
261 - 265 |
Gate oxide metrology and silicon piezooptics Zollner S, Liu R, Volinsky AA, White T, Nguyen BY, Cook CS |
266 - 271 |
Structure analysis of organic films by mid-infrared ellipsometry Hinrichs K, Roseler A, Gensch M, Korte EH |
272 - 277 |
Infrared spectroscopic ellipsometry study of molecular orientation induced anisotropy in polymer substrates Bungay C, Tiwald TE |
278 - 282 |
Temperature dependence of ellipsometric spectra of poly (methyl-phenylsilane) Zrzavecka OB, Nebojsa A, Navratil K, Nespurek S, Humlicek J |
283 - 287 |
IR-FUV ellipsometry studies on the optical, electronic and vibrational properties of polymeric membranes Gioti M, Laskarakis A, Logothetidis S |
288 - 291 |
Envelope analysis in spectroscopic ellipsometry of thin films. Application to a weakly-absorbing polymer film Martinez-Anton JC, Gomez-Pedrero JA, Alvarez-Herrero A |
292 - 294 |
Swelling of a thin B+ implanted polyimide layer - a dynamic spectroscopic ellipsometry study Eichhorn K, Sabre K, Gunther M, Suchaneck G, Gerlach G |
295 - 300 |
Infrared ellipsometry characterization of conducting thin organic films Schubert M, Bundesmann C, Jakopic G, Maresch H, Arwin H, Persson NC, Zhang F, Inganas O |
301 - 312 |
Relationships among surface processing at the nanometer scale, nanostructure and optical properties of thin oxide films Losurdo M |
313 - 317 |
Correlations between the microstructure of Ag-Si3N4 multilayers and their optical properties Girardeau T, Camelio S, Babonneau D, Toudert J, Barranco A |
318 - 322 |
Characterization of interfacial layer of ultrathin Zr silicate on Si(100) using spectroscopic ellipsometry and HRTEM Ahn H, Chen HW, Landheer D, Wu X, Chou LJ, Chao TS |
323 - 334 |
Ellipsometric characterisation of heterogeneous 2D layers Wormeester H, Kooij ES, Mewe A, Rekveld S, Poelsema B |
335 - 338 |
Dielectric function of Si nanocrystals embedded in SiO2 Gallas B, Kao CC, Defranoux C, Fisson S, Vuye G, Rivory J |
339 - 343 |
Spectroscopic ellipsometry of carbon nanotube formation in SiC surface decomposition Matsumoto K, Maeda H, Kawaguchi Y, Takahashi K, Aoyama M, Yamaguchi T, Postava K |
344 - 348 |
Depth distribution of disorder and cavities in high dose helium implanted silicon characterized by spectroscopic ellipsometry Petrik P, Cayrel F, Fried M, Polgar O, Lohner I, Vincent L, Alquier D, Gyulai J |
349 - 355 |
The simultaneous determination of n, k, and t from polarimetric data Flock K |
356 - 360 |
Water adsorption in porous TiO2-SiO2 sol-gel films analyzed by spectroscopic ellipsometry Alvarez-Herrero A, Ramos G, del Monte E, Bernabeu E, Levy D |
361 - 365 |
Determination of refractive index of printed and unprinted paper using spectroscopic ellipsometry Bakker JW, Bryntse G, Arwin H |
366 - 369 |
Description of the porosity of inhomogeneous porous low-k films using solvent adsorption studied by spectroscopic ellipsometry in the visible range Bourgeois A, Bruneau AB, Jousseaume V, Rochat N, Fisson S, Demarets B, Rivory J |
370 - 375 |
Visible and infrared ellipsometry applied to the study of metal-containing diamond-like carbon coatings Corbella C, Pascual E, Canillas A, Bertran E, Andujar JL |
376 - 379 |
Application of in-situ ellipsometry to the fabrication of multi-layer optical coatings with sub-nanometre accuracy Dligatch S, Netterfield RP, Martin B |
380 - 383 |
Complete wetting transition at the fluid-vapour interface of Ga-Bi studied by spectroscopic ellipsometry Dogel S, Nattland D, Freyland W |
384 - 387 |
Spectroscopic ellipsometry characterization of ZnO-In(2)O3 systems El Rhaleb H, Naciri AE, Dounia R, Johann L, Hakam A, Addou M |
388 - 392 |
Analytical model for optical functions of amorphous semiconductors and its implications for thin film solar cells Ferlauto AS, Ferreira GM, Pearce JM, Wronski CR, Collins RW, Deng X, Ganguly G |
393 - 398 |
Optical properties of diamond-like carbon films containing SiOx studied by the combined method of spectroscopic ellipsometry and spectroscopic reflectometry Franta D, Ohlidal I, Bursikova V, Zajickova L |
399 - 403 |
Complete characterization of rough polymorphous silicon films by atomic force microscopy and the combined method of spectroscopic ellipsometry and spectroscopic reflectometry Franta D, Ohlidal I, Klapetek P, Cabarrocas PRI |
404 - 409 |
Dose-dependence of ion implantation-caused damage in silicon measured by ellipsometry and backscattering spectrometry Fried A, Petrik P, Lohner T, Khanh NQ, Polgar O, Gyulai J |
410 - 416 |
Characterisation of porous silicon composite material by spectroscopic ellipsometry Gaillet M, Guendouz M, Ben Salah M, Le Jeune B, Le Brun G |
417 - 421 |
Spectroellipsometric characterization of sol-gel TiO2-CuO thin coatings Gartner M, Scurtu R, Ghita A, Zaharescu M, Modreanu M, Trapalis C, Kokkoris M, Kordas G |
422 - 428 |
Ex situ spectroscopic ellipsometry investigations of chemical vapor deposited nanocomposite carbon thin films Gupta S, Weiner BR, Morell G |
429 - 432 |
Optical and magnetooptical properties of bismuth and gallium substituted iron garnet films Hansteen F, Helseth LE, Johansen TH, Hunderi O, Kirilyuk A, Rasing T |
433 - 437 |
Contributions to the static dielectric constant of low-k xerogel films derived from ellipsometry and IR spectroscopy Himcinschi C, Friedrich M, Fruhauf S, Schulz SE, Gessner T, Zahn DRT |
438 - 442 |
Study of structure and optical properties of silver oxide films by ellipsometry, XRD and XPS methods Gao XY, Wang SY, Li J, Zheng YX, Zhang RJ, Zhou P, Yang YM, Chen LY |
443 - 449 |
Dielectric function of thin metal films by combined in situ transmission ellipsometry and intensity measurements Pribil GK, Johs B, Ianno NJ |
450 - 452 |
Mn1-xFex alloy films studied by optical and magneto-optical spectroscopies Kim JB, Park SY, Lee YP, Kudryavtsev YV, Gontarz R, Szymanski B |
453 - 456 |
Effect of ion irradiation on the optical properties and room temperature oxidation of copper surface Poperenko LV, Shaaban ER, Khanh NQ, Stashchuk VS, Vinnichenko MV, Yurgelevich IV, Nosach DV, Lohner T |
457 - 461 |
Spectroscopic ellipsometry characterization of interface reactivity in GaAs-based superlattices Losurdo M, Giuva D, Giangregorio MM, Bruno G, Brown AS |
462 - 467 |
The finite difference time domain method as a numerical tool for studying the polarization optical response of rough surfaces Lehner B, Hingerl K |
468 - 472 |
Ellipsometric and XPS analysis of the interface between silver and SiO2, TiO2 and SiNx thin films Masetti E, Bulir J, Gagliardi S, Janicki V, Krasilnikova A, Di Santo G, Coluzza C |
473 - 477 |
Spectroscopic ellipsometry of TaNx and VN films Mistrik J, Takahashi K, Antos R, Aoyama M, Yamaguchi I, Anma Y, Fukuda Y, Takeyama MB, Noya A, Jiang ZT, Thurgate SM, Riessen GV |
478 - 481 |
Spectroscopic ellipsometry of pulsed laser irradiated c-Ge surfaces Mistrik J, Antos R, Murakami K, Aoyama M, Yamaguchi T, Anma Y, Fukuda Y, Medvid A, Michko A |
482 - 485 |
Spectroscopic ellipsometry analysis for investigation of the modification of thin film p-a-Si1-xCx : H after ultraviolet treatment in an Argon ambient Myong SY, Kim SS, Lim KS |
486 - 490 |
Correlation between silicon nanocrystalline size effect and spectroscopic ellipsometry responses Naciri AE, Mansour A, Johann L, Grob JJ, Eckert C |
491 - 494 |
Ellipsometry characterization of oxidized copper layers for chemical mechanical polishing process Nishizawa H, Tateyama Y, Saitoh T |
495 - 499 |
Optical characterization of ferroelectric strontium-bismuth-tantalate (SBT) thin films Schmidt C, Petrik P, Schneider C, Fried M, Lohner T, Barsony I, Gyulai J, Ryssel H |
500 - 504 |
UV-VUV spectroscopic ellipsometry of ternary MgxZn1-xO (0 <= x <= 0.53) thin films Schmidt-Grund R, Schubert M, Rheinlander B, Fritsch D, Schmidt H, Kaidashev EM, Lorenz M, Herzinger CM, Grundmann M |
505 - 508 |
Vacuum ultraviolet spectroscopic ellipsometry investigations of guanine layers on H-passivated Si(111) surfaces Silaghi SD, Friedrich M, Scholz R, Kampen TU, Cobet C, Esser N, Richter W, Braun W, Zahn DRT |
509 - 512 |
Spectroellipsometric study of the sol-gel nanocrystalline ITO multilayer films Stoica TF, Gartner M, Losurdo M, Teodorescu V, Blanchin M, Stoica T, Zaharescu M |
513 - 518 |
Photopolarimetric investigations of liquid crystals-electrochromic oxides interface Strangi G, Versace C, Scaramuzza N, Cazzanelli E, Bruno V, Vena C, D'Elia S, Bartolino R |
519 - 524 |
Spectroscopic ellipsometry (SE) and grazing X-ray reflectometry (GXR) analyses on tungsten carbide films for diffusion barrier in copper metallization schemes Sun LC, Fouere JC, Sammet T, Hatzistergos M, Efstathiadis H |
525 - 529 |
Spectroscopic ellipsometry study on e-beam deposited titanium dioxide films Sun LC, Hou P |
530 - 534 |
Spectroscopic ellipsometry investigation of amorphous carbon films with different sp(3) content: relation with protein adsorption Vinnichenko M, Gago R, Huang N, Leng YX, Sun H, Kreissig U, Kulish MP, Maitz MF |
535 - 539 |
The ideal vehicle for optical model development: porous silicon multilayers Volk J, Fried M, Toth AL, Barsony I |
540 - 544 |
Spectroscopic ellipsometry study of focused ion beam induced GaAs surface modification Basnar B, Lugstein A, Bertagnolli E, Gornik E |
545 - 550 |
Ellipsometric analysis of gamma radiation effects on standard optical coatings used in aerospace applications Fernandez-Rodriguez M, Ramos G, del Monte E, Levy D, Alvarado CG, Nunez A, Alvarez-Herrero A |
551 - 556 |
Determination of the anisotropic dielectric function for metal free phthalocyanine thin films Gordan OD, Friedrich M, Zahn DRT |
557 - 562 |
Investigation of optical anisotropy of Langmuir-Blodgett films of long-chain acetylenic acids Badmaeva IA, Nenasheva LA, Polovinkin VG, Repinsky SM, Sveshnikova LL |
563 - 570 |
Far-infrared magnetooptic generalized ellipsometry: determination of free-charge-carrier parameters in semiconductor thin film structures Schubert M, Hofmann T, Herzinger CM |
571 - 575 |
Analysis of the optical properties and structure of sculptured thin films from spectroscopic Mueller matrix ellipsometry Podraza NJ, Chen C, An I, Ferreira GM, Rovira PI, Messier R, Collins RW |
576 - 580 |
Anisotropic optical functions of pentaerythrytol, an uniaxial organic crystal Sassella A, Wagner T, Herzinger C, Su GB, He YP, Chen CJ |
581 - 585 |
Generalized ellipsometry for the characterization of anisotropic materials: influence of the sample adjustment on the extracted optical indices Boher P, Piel JP, Sacepe B |
586 - 590 |
VASE and IR spectroscopy: excellent tools to study biaxial organic molecular thin films: DiMe-PTCDI on S-passivated GaAs(100) Friedrich M, Himcinschi C, Salvan G, Anghel M, Paraian A, Wagner T, Kampen TU, Zahn DRT |
591 - 595 |
Mueller-matrix characterization of liquid crystals Hilfiker JN, Herzinger CM, Wagner T, Marino A, Delgais G, Abbate G |
596 - 600 |
Generalized spectroscopic ellipsometry and Mueller-matrix study of twisted nematic and super twisted nematic liquid crystals Hilfiker JN, Johs B, Herzinger CM, Elman JF, Montbach E, Bryant D, Bos PJ |
601 - 604 |
Far-infrared dielectric function and phonon modes of spontaneously ordered (AlxGa1-x)(0.52)ln(0.48)P Hofmann T, Schuberta M, Gottschalch V |
605 - 608 |
Concentration and size dependence of optical properties of Ag : Bi2O3 composite films by using the co-sputtering method Zhou P, You HY, Jia JH, Li J, Han T, Wang SY, Zhang RJ, Zheng YX, Chen LY |
609 - 614 |
Ellipsometry on uniaxial ZnO and Zn1-xMgxO thin films grown on (0001) sapphire substrate Kang TD, Lee H, Park WI, Yi GC |
615 - 618 |
Magneto-optical ellipsometry of systems containing thick layers Postava K, Zivotsky O, Pistora J, Yamaguchi I |
619 - 623 |
Generalized ellipsometry for orthorhombic, absorbing materials: dielectric functions, phonon modes and band-to-band transitions of Sb2S3 Schubert M, Hofmann T, Herzinger CM, Dollase W |
624 - 627 |
Mueller matrix ellipsometry study of uniaxial deuterated potassium dihydrogen phosphate (DKDP) Synowicki RA, Hilfiker JN, Whitman PK |
628 - 631 |
Coherent and incoherent interference modelling and measurement of anisotropic multilayer stacks using conventional ellipsometry Touir H, Stchakovsky M, Ossikovski R, Warenghemb M |
632 - 638 |
General virtual interface algorithm for in situ spectroscopic ellipsometric data analysis Johs B |
639 - 644 |
Integrated rotating-compensator polarimeter for real-time measurements and analysis of organometallic chemical vapor deposition Flock K, Kim SJ, Asar M, Kim IK, Aspnes DE |
645 - 649 |
Control of etch depth in patterned semiconductor substrates using real time spectroscopic ellipsometry Cho SJ, Snyder PG, Ianno NJ, Herzinger CM, Johs B |
650 - 655 |
Spectroellipsometric evaluation of colour and oxidation resistance of TiMgN coatings Banakh O, Balzer M, Fenker M, Blatter A |
656 - 660 |
An in situ study of mesostructured CTAB-silica film formation using infrared ellipsometry: evolution of water content Brunet-Bruneau A, Bourgeois A, Cagnol F, Grosso D, Sanchez C, Rivory J |
661 - 664 |
In-situ spectroscopic ellipsometry investigation and control of GaN growth mode in metal-organic vapor phase epitaxy at low pressures of 20 Torr Cao B, Xu K, Ishitani Y, Yoshikawa A |
665 - 669 |
Evaluation of compositional depth profiles in mixed-phase (amorphous plus crystalline) silicon films from real time spectroscopic ellipsometry Ferlauto AS, Ferreira GM, Koval RJ, Pearce JM, Wronski CR, Collins RW, Al-Jassim MM, Jones KM |
670 - 674 |
Real-time studies of amorphous and microcrystalline Si : H growth by spectroscopic ellipsometry and infrared spectroscopy Fujiwara H, Kondo M, Matsuda A |
675 - 678 |
Observation of the cascaded phase transformation of Ge-Sb-Te alloy at elevated temperature by using nanosecond time resolved ellipsometry Kim SJ, Park YD, An SH, Kim SY |
679 - 683 |
In-situ studies of the growth of amorphous and nanocrystalline silicon using real time spectroscopic ellipsometry Levi DH, Nelson BP, Iwanizcko E, Teplin CW |
684 - 687 |
In-situ growth monitoring by spectroscopy ellipsometry of MOCVD cubic-GaN(001) Ramil AM, Schmidegg K, Bonanni A, Sitter H, Stifter D, Li SF, As DJ, Lischka K |
688 - 694 |
In situ ellipsometry for control of Hg1-xCdxTe nanolayer structures and inhomogeneous layers during MBE growth Shvets VA, Rykhlitski SV, Spesivtsev EV, Aulchenko NA, Mikhailov NN, Dvoretsky SA, Sidorov YG, Smirnov RN |
695 - 699 |
In situ spectroscopic ellipsometry of hydrogen-argon plasma cleaned silicon surfaces Forster C, Schnabel F, Weih P, Stauden T, Ambacher O, Pezoldt J |
700 - 704 |
Time-resolved microellipsometry for rapid thermal processes monitoring Spesivtsev E, Rykhlitsky SV, Shvets V, Chikichev SI, Mardezhov AS, Nazarov NI, Volodin V |
705 - 709 |
Realtime layer-by-layer analysis for multilayer fabrication monitoring by an automatic null ellipsometer Tsuru T, Tsutou I, Yamamoto M |
710 - 715 |
In situ measurements of chemical sensor film dynamics by spectroscopic ellipsometry. Three case studies Zudans I, Heineman WR, Seliskar CJ |
716 - 721 |
Protein monolayers monitored by internal reflection ellipsometry Poksinski M, Arwin H |
722 - 725 |
Application of FTIR ellipsometry to detect and classify microorganisms Garcia-Caurel E, Nguyen J, Schwartz L, Drevillon B |
726 - 730 |
Protein adsorption in porous silicon gradients monitored by spatially-resolved spectroscopic ellipsometry Karlsson LM, Schubert M, Ashkenov N, Arwin H |
731 - 734 |
Spectroscopic ellipsometry on biological materials - investigation of hydration dynamics and structural properties Schulz B, Chan D, Backstrom J, Rubhausen M |
735 - 741 |
In situ ellipsometric and electrochemical monitoring of the oxidation of a Pb-Ca-Sn alloy used in the lead acid batteries Stein N, Bourguignon G, Raboin L, Broch L, Johann L, Rocca E |
742 - 746 |
Use of in-situ spectroscopic ellipsometry to study aluminium/oxide surface modifications in chloride and sulfuric solutions Van Gils S, Melendres CA, Terryn H, Stijns E |
747 - 751 |
CO2 sorption of a ceramic separation membrane Wormeester H, Benes NE, Spijksma GI, Verweij H, Poelsema B |
752 - 758 |
Reflection anisotropy spectroscopy of molecular assembly at metal surfaces Martin DS, Weightman R |
759 - 763 |
Atomic-layer resolved monitoring of thermal oxidation of Si(001) by reflectance difference oscillation technique Yasuda T, Nishizawa M, Kumagai N, Yamasaki S, Oheda H, Yamabe K |
764 - 764 |
Calculation of surface optical properties: from qualitative understanding to quantitative predictions Schmidt WG, Seino K, Hahn PH, Bechstedt E, Lu W, Wang S, Bernholc J |
772 - 778 |
Industrial applications of spectroscopic ellipsometry Tompkins HG |
779 - 783 |
Biplate artifacts in rotating-compensator ellipsometers Ebert K, Aspnes DE |
784 - 789 |
Ellipsometric monitoring of molecular evolution in freely suspended films of M12/10 ferroelectric liquid crystal Bortchagovsky EG, Deineka A, Glogarova A, Hamplova V, Jastrabik L, Kaspar M |
790 - 793 |
Performance analysis of ellipsometer systems Asinovski L |
794 - 797 |
Spectroscopic ellipsometry for in-line monitoring of silicon nitrides Cook CS, Daly T, Liu R, Canonico M, Xie Q, Gregory RB, Zollner S |
798 - 803 |
Automated metrology system including VUV spectroscopic ellipsometry and X-ray reflectometry for 300 mm silicon microelectronics Boher P, Evrard P, Condat O, Dos Reis C, Defranoux C, Piel JP, Stehle JL, Bellandi E |
804 - 808 |
Application of the genetic algorithms in spectroscopic ellipsometry Kudla A |
809 - 818 |
A new multiple wavelength ellipsometric imager: design, limitations and applications Boher P, Thomas O, Piel JP, Stehle JL |
819 - 823 |
Oxidation behaviour of thin silver films deposited on plastic web characterized by spectroscopic ellipsometry (SE) Sahm H, Charton C, Thielsch R |
824 - 827 |
A memory application of light reflection from anisotropic microstructured thin films Tazawa M, Xu G, Jin P, Arwin H |
828 - 836 |
Spectroscopic ellipsometry and reflectometry from gratings (Scatterometry) for critical dimension measurement and in situ, real-time process monitoring Huang HT, Terry FL |