1 - 15 |
Review of the filtered vacuum arc process and materials deposition Martin PJ, Bendavid A |
16 - 23 |
A medium energy ion scattering study of metal-on-metal epitaxy and surfactant-mediated growth for the Au on Cu(111) system Noakes TCQ, Bailey P |
24 - 29 |
Characterization of polycrystalline Cu(In,Ga)Te-2 thin films prepared by pulsed laser deposition Gremenok VF, Martin RW, Bodnar IV, Yakushev MV, Schmitz W, Bente K, Martil I, Martinez FL, Zaretskaya EP, Victorov IA, Ermakov OV, Faunce CA, Pilkington RD, Hill AE, Tomlinson RD |
30 - 39 |
Transition from polymer-like to diamond-like carbon coatings synthesized by a hybrid radiofrequency-microwave plasma source Braca E, Kenny JM, Korzec D, Engemann J |
40 - 43 |
Use of emanation thermal analysis in the characterization of microstructure changes during heating of hydrous titania gel layers deposited by sol-gel technique on silica glass Balek V, Kosova E, Sumi N, Mitsuhashi T, Haneda H, Subrt J |
44 - 48 |
On the determination of carbon sp(2)/sp(3) ratios in polystyrene-polyethylene copolymers by photoelectron spectroscopy Turgeon S, Paynter RW |
49 - 63 |
Improved transparent conductive oxide/p(+)/i junction in amorphous silicon solar cells by tailored hydrogen flux during growth Nuruddin A, Abelson JR |
64 - 71 |
Fabrication and electrochromic properties of double layer WO3(V)/V2O5(Ti) thin films prepared by pulsed laser ablation technique Fang GJ, Yao KL, Liu ZL |
72 - 80 |
A new class of Ti-Si-C-N coatings obtained by chemical vapor deposition, Part 1: 1000 degrees C Process Kuo DH, Huang KW |
81 - 89 |
A new class of Ti-Si-C-N coatings obtained by chemical vapor deposition - part II: low-temperature process Kuo DH, Huang KW |
90 - 96 |
Sol-gel synthesis and characterisation of ZnO-based nanosystems Armelao L, Fabrizio M, Gialanella S, Zordan F |
97 - 101 |
Highly (111) oriented lead zirconate titanate thin films deposited using a non-polymeric route Zai MHM, Akiba A, Goto H, Matsumoto M, Yeatman EM |
102 - 108 |
The adhesion of hydrogenated amorphous carbon films on silicone Donnelly K, Dowling DP, McConnell ML, Mooney M |
109 - 114 |
Preparation and characterization of smooth and dense silicon nitride thin films Xu WT, Fujimoto T, Kojima I |
115 - 124 |
Room temperature deposition of hydrogenated amorphous carbon films from laser-assisted photolytic chemical vapor deposition at 248 nm Lindstam M, Boman M, Piglmayer K |
125 - 130 |
Crack formation in TiN films deposited on Pa-n due to large thermal mismatch Gadre KS, Alford TL |
131 - 135 |
Ca- and Sr-doped (Pb1-xLax)(ZryTi1-y)(1-x/4)O-3 thin films for low-voltage operation Kim SH, Ha J, Hwang CS, Kingon AI |
136 - 141 |
Thermal stability of amorphous thin films: Ti3Si1O8 vs. TiO2 and mictamict compounds Giauque PH, Cherry HB, Nicolet MA |
142 - 150 |
Sol-gel precursor effect on the formation of ferroelectric strontium bismuth tantalate thin films Lee KS, Sohn DS, Hong SH, Lee WI, Kim YT, Chae HK, Chung I |
151 - 158 |
Morphology and structure of Mg-Ti-O spinel(100) epitaxially grown on MgO(100): effect of solid state reactions Kubo T, Nozoye H |
159 - 163 |
Semiconducting mixed Langmuir-Blodgett films of new charge-transfer complex II: N-octadecylbenzidine-TCNQ Jaiswal A, Singh RA |
164 - 173 |
Reflectivity and diffraction study of cross-beam pulsed laser deposited Co/Cu multilayers Prokert F, Noetzel J, Schell N, Wieser E, Matz W, Gorbunov A |
174 - 179 |
Electrochemical behaviour of anodic oxide film on antimony in sulfuric acid solutions containing dichromate ions Mogoda AS |
180 - 188 |
A comparative study of sputtered TaCx and WCx films as diffusion barriers between Cu and Si Wang SJ, Tsai HY, Sun SC |
189 - 201 |
Modeling and acoustic microscopy measurements for evaluation of the adhesion between a film and a substrate Guo ZQ, Achenbach JD, Madan A, Martin K, Graham ME |
202 - 206 |
A mechanical assessment of flexible optoelectronic devices Chen Z, Cotterell B, Wang W, Guenther E, Chua SJ |
207 - 212 |
Effect of electric field and doping on photovoltaic properties of alpha-bromine-terthiophene thin film Xie TF, Wang DJ, Yang WS, Zhang YH, Xu JJ, Zhu LJ, Li TJ |
213 - 218 |
The effect of post-annealing on the electrical properties of (Pb,Sr)TiO3 thin films prepared by liquid source misted chemical deposition for ultra large-scale integration (ULSI) dynamic random access memory (DRAM) capacitor Chung HJ, Chung SJ, Kim JH, Woo SL |
219 - 223 |
A new transparent conductive thin film In2O3 : Mo Meng Y, Yang XL, Chen HX, Shen J, Jiang YM, Zhang ZJ, Hua ZY |
224 - 229 |
Ellipsometric study on the surface of In0.7Ga0.3AsxP1-x thin films exposed to air Kim HR |
230 - 236 |
Structure and transport properties of p-type polycrystalline silicon fabricated from fluorinated source gas Kamiya T, Nakahata K, Ro K, Shimizu I |
237 - 241 |
Slab waveguide resonance monitoring by free space waves Pigeon F, Jourlin Y, Parriaux O |
242 - 249 |
Characteristics of ZnO : F thin films obtained by chemical spray. Effect of the molarity and the doping concentration Olvera MDL, Maldonado A, Asomoza R, Solorza O, Acosta DR |
250 - 255 |
Study of GaAs and GaInP etching in Cl-2/Ar electron cyclotron resonance plasma Yoon SF, Ng TK, Zheng HQ |
256 - 263 |
Optical properties of intrinsic and doped a-Si : H films grown by d.c. magnetron sputter deposition Rantzer A, Arwin H, Birch J, Hjorvarsson B, Bakker JWP, Jarrendahl K |
264 - 271 |
Luminescent properties of Eu2+ ion in BaMg((1-x))SixAl10Oy films prepared by spray pyrolysis Studenikin SA, Cocivera M |
272 - 276 |
Application of linear annealing method to Si vertical bar vertical bar SiO2/Si wafer direct bonding Lee JW, Kang CS, Song OS, Kim CK |
277 - 283 |
Preliminary characterization of PbI2 polycrystalline layers deposited from solution for nuclear detector applications Ponpon JP, Amann M |
284 - 291 |
Measurements of residual stress in the thin film micro-gas sensors containing metallic layers Kim Y, Choo SH |
292 - 297 |
Organic electroluminescent devices: enhanced carrier injection using an organosilane self assembled monolayer (SAM) derivatized ITO electrode Hatton RA, Day SR, Chesters MA, Willis MR |
298 - 303 |
A high-temperature oxidation-resistant coating, for graphite, prepared by atmospheric pressure chemical vapor deposition Bahlawane N |