Thin Solid Films

Thin Solid Films, Vol.501, No.1-2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (90 articles)

1 - 2	Third International Conference on Hot-Wire CVD (Cat-CVD) Process -Preface Bouree JE, Mahan AH
3 - 7	An update on silicon deposition performed by hot wire CVD Mahan AH
8 - 14	Carbon nanostructures by Hot Filament Chemical Vapor Deposition: Growth, properties, applications Bonard JM
15 - 20	Expectation for Cat-CVD in ULST technology and business trend Akasaka Y
21 - 25	Hot wire radicals and reactions Zheng W, Gallagher A
26 - 30	Elementary processes in silicon hot wire CVD Nakamura S, Koshi M
31 - 34	H-2 dilution effect in the Cat-CVD processes of the SiH4/NH3 system Ansari SG, Umemoto H, Morimoto T, Yoneyama K, Izumi A, Masuda A, Matsumura H
35 - 38	The mechanism of alumina formation from TMA and molecular oxygen using catalytic-CVD with an iridium catalyzer Ogita YI, Tomita T
39 - 42	The mechanism of alumina formation from TMA and molecular oxygen using Catalytic-CVD with a tungsten catalyzer Ogita YI, Tomita T
43 - 46	Improved deposition rates for mu c-Si : H at low substrate temperature Klein S, Finger F, Carius R, Lossen J
47 - 50	Beneficial effects of sputtered ZnO : Al protection layer on SnO2 : F for high-deposition rate hot-wire CVD p-i-n solar cells Franken RH, van der Werf CHM, Loffler J, Rath JK, Schropp REI
51 - 54	Silicon nitride at high deposition rate by Hot Wire Chemical Vapor Deposition as passivating and antireflection layer on multi crystalline silicon solar cells van der Werf CHM, Goldbach HD, Loffler J, Scarfo A, Kylner AMC, Stannowski B, ArnoldBik WM, Weeber A, Rieffe H, Soppe WJ, Rath JK, Schropp REI
55 - 57	High-rate deposition of SiNx films over 100 nm/min by Cat-CVD method at low temperatures below 80 degrees C Osono T, Heya A, Niki T, Takano M, Minamikawa T, Muroi S, Masuda A, Umemoto H, Matsumura H
58 - 60	Present status and future feasibility for industrial implementation of Cat-CVD (Hot-Wire CVD) technology Matsumura H, Masuda A, Untemoto H
61 - 64	Development of catalytic chemical vapor deposition apparatus for large size substrates Osono S, Kitazoe M, Tsuboi H, Asari S, Saito K
65 - 69	sp3's experience using hot filament CVD reactors to grow diamond for an expanding set of applications Herlinger J
70 - 74	Real-time study of HWCVD a-Si : H film growth using optical second harmonic generation spectroscopy Aarts IMP, Gielis JJH, Grauls PMJ, Leewis CM, van de Sanden MCM, Kessels WMM
75 - 78	Investigations of intrinsic strain and structural ordering in a-Si : H using synchrotron radiation diffraction Harting M, Britton DT, Minani E, Ntsoane TP, Topic M, Thovhogi T, Osiele OM, Knoesen D, Harindintwari S, Furlan F, Giles C
79 - 83	Microstructural defect characterisation of a-Si : H deposited by low temperature HW-CVD on paper substrates Britton DT, Harting M, Knoesen D, Sigcau Z, Nemalili FP, Ntsoane TP, Sperr P, Egger W, Nippus M
84 - 87	Microstructure, optical characterization and light induced degradation in a-Si : H deposited at different temperatures Minani E, Sigcau Z, Adgebite O, Ramukosi FL, Ntsoane TP, Hanindintwari S, Knoesen D, Comrie CM, Britton DT, Harting M
88 - 91	Substrate temperature dependence of the roughness evolution of HWCVD a-Si : H spectroscopic ellipsometry Kessels WMM, Hoefnagels JPM, Langereis E, van de Sanden MCM
92 - 94	Thermal stability of hot-wire deposited amorphous silicon Arendse CJ, Knoesen D, Britton DT
95 - 97	Hot wire-CVD deposited a-SiOx and its characterization Matsumoto Y
98 - 101	Crystallization of HWCVD amorphous silicon thin films at elevated temperatures Muller TFG, Knoesen D, Arendse C, Swanepoel R, Halindintwali S, Theron C
102 - 106	Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition Daimaru T, Tabata A, Mizutani T
107 - 112	Characterization of grain growth, nature and role of grain boundaries in microcrystalline silicon - review of typical features Kocka J, Mates T, Stuchlikova H, Stuchlik J, Fejfar A
113 - 116	Nano-structure in micro-crystalline silicon thin films studied by small-angle X-ray scattering Zhou BQ, Liu FZ, Gu JH, Zhang QF, Zhou YQ, Zhu MF
117 - 120	Internal stress in Cat-CVD microcrystalline Si : H thin films Sahu L, Kale N, Kulkarni N, Pinto R, Dusane RO, Schroder B
121 - 124	Sub-bandgap optical absorption spectroscopy of hydrogenated micro crystalline silicon thin films prepared using hot-wire CVD (Cat-CVD) process Goktas O, Isik N, Okur S, Gunes M, Carius R, Klomfass J, Finger F
125 - 128	Optical and electronic properties of HWCVD and PECVD silicon films irradiated using excimer and Nd : Yag lasers Shaikh MZ, O'Neill KA, Anthony S, Persheyev SK, Rose MJ
129 - 132	Study of metastabilities in microcrystalline silicon films by photoconductivity techniques Souffi N, Bauer GH, Bruggemann R
133 - 136	Transport in microcrystalline silicon thin films deposited at low temperature by hot-wire chemical vapor deposition Bouree JE, Jadkar SR, Kasouit S, Vanderhaghen R
137 - 140	Diffusion length measurements of micro crystalline silicon thin films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD) Okur S, Gunes M, Finger F, Carius R
141 - 143	Properties of n-type mu c-Si : H films by Cat-CVD for c-Si heterojunction solar cells Zhang Q, Zhu M, Liu F, Liu J
144 - 148	Hydrogenation of polycrystalline silicon thin films Honda S, Mates I, Knizek K, Ledinsky M, Fejfar A, Kocka J, Yamazaki T, Uraoka Y, Fuyuki T
149 - 153	Various applications of silicon nitride by catalytic chemical vapor deposition for coating, passivation and insulating films Masuda A, Umemoto H, Matsumura H
154 - 156	Formation of highly moisture-resistive SiNx films on Si substrate by Cat-CVD at room temperature Minamikawa T, Heya A, Niki T, Takano M, Yonezawa Y, Muroi S, Minami S, Masuda A, Umemoto H, Matsumura H
157 - 159	Ultra thin silicon nitride prepared by direct nitridation using ammonia decomposed species Izumi A
160 - 163	A layer-by-layer Cat-CVD of conformal and stoichiometric silicon nitride with in-situ H-2 post-treatment Kitazoe M, Osono S, Itoh H, Asari S, Saito K, Hayama M
164 - 168	The formation of hetero-junction using carbon alloys by hot-wire CVD method Nonomura S, Yoshida N, Itoh T
169 - 172	Low substrate temperature deposition of crystalline SiC using HWCVD Klein S, Carius R, Finger F, Houben L
173 - 176	Effect of H-2 dilution on Cat-CVD a-SiC : H films Swain BP, Rao TKG, Roy M, Gupta J, Dusane RO
177 - 180	Properties of hydrogenated amorphous silicon carbide films prepared at various hydrogen gas flow rates by hot-wire chemical vapor deposition Mori M, Tabata A, Mizutani T
181 - 185	A comparative study on SiC thin films grown on both uncatalyzed and Ni catalyzed Si(100) substrates by thermal MOCVD using single molecular precursors Kang BC, Moon OM, Boo JH
186 - 189	Aluminum-doped hydrogenated microcrystalline cubic silicon carbide films deposited by hot wire CVD Miyajima S, Yamada A, Konagai M
190 - 194	Low-temperature growth of Si-based organic-inorganic hybrid materials, Si-O-C and Si-N-C, by organic Cat-CVD Nakayama H, Hata T
195 - 197	Deposition of SiCN films using organic liquid materials by HWCVD method Izumi A, Oda K
198 - 201	Deposition of photosensitive hydrogenated amorphous silicon-germanium films with a tantalum hot wire Xu YQ, Mahan AH, Gedvilas LM, Reedy RC, Branz HM
202 - 205	Deposition and characterization of mu c-Ge1-xCx thin films grown by hot-wire chemical vapor deposition using organo-germane Yashiki Y, Miyajima S, Yamada A, Konagai M
206 - 210	The bias-assisted HFCVD nucleation of diamond: Investigations on the substrate temperature and the filaments location Larijani MM, Navinrooz A, Le Normand F
211 - 215	Polymeric nanocoatings by hot-wire chemical vapor deposition (HWCVD) Lau KKS, Mao Y, Lewis HGP, Murthy SK, Olsen BD, Loo LS, Gleason KK
216 - 220	Hot-wire chemical vapor synthesis for a variety of nano-materials with novel applications Dillon AC, Mahan AH, Deshpande R, Alleman JL, Blackburn JL, Parillia PA, Heben MJ, Engtrakul C, Gilbert KEH, Jones KM, To R, Lee SH, Lehman JH
221 - 223	Oriented growth of suspended single wall carbon nanotube by Hot Filament CVD Iaia A, Marty L, Naud C, Bouchiat V, Loiseau A, Di Muoio E, Fournier T, Bonnot AM
224 - 226	Hydrogen adsorption in single-walled and multi-walled carbon nanotubes grown in a hot-wire CVD (Cat-CVD) reactor Deshpande R, Dillon AC, Mahan AH, Alleman J, Mitra S
227 - 232	Synthesis of multi-walled carbon nanotubes by combining hot-wire and dc plasma-enhanced chemical vapor deposition Cojocaru CS, Kim DY, Pribat D, Bouree JE
233 - 237	Catalyst-assisted hot filament chemical vapor deposition and characterization of carbon nanostructures Park KH, Yim JH, Lee S, Koh KH
238 - 242	Characteristics of carbonaceous materials with nanotubes grown by hot-filament plasma-enhanced chemical vapor deposition method Jung KH, Shin YS, Boo JH, Kim YJ, Hong BY
243 - 246	Key issues for fabrication of high quality amorphous and micro crystalline silicon solar cells Kondo M, Matsui T, Nasuno Y, Sonobe H, Shimizu S
247 - 251	Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD Fonrodona M, Soler D, Villar F, Escarre J, Asensi JM, Bertomeu J, Andreu J
252 - 255	Instability phenomena in mu c-Si : H solar cells prepared by hot-wire CVD Sendova-Vassileva M, Klein S, Finger F
256 - 259	Tandem and triple junction silicon thin film solar cells with intrinsic layers prepared by hot-wire CVD Stolk RL, Li H, van der Werf CHM, Schropp REI
260 - 263	Microcrystalline B-doped window layers prepared near amorphous to microcrystalline transition by HWCVD and its application in amorphous silicon solar cells Kumar P, Kupich M, Grunsky D, Schroeder B
264 - 267	Relation between pin a-Si : H solar-cell perfon-nances and intrinsic-layer properties prepared by Cat-CVD Kitamura T, Honda K, Nishimura M, Sugita K, Takemoto K, Yamaguchi Y, Toyama Y, Yamamoto T, Miyazaki S, Eguchi M, Harano T, Sugano T, Yoshida N, Masuda A, Itoh T, Toyama T, Nonomura S, Okamoto H, Matsumura H
268 - 271	Preparation of microcrystalline silicon nip solar cells and amorphous-microcrystalline nipnip tandem solar cells entirely by hot-wire CVD Kupich M, Grunsky D, Kumar P, Schroder B
272 - 275	Differences in the structure composition of microcrystalline silicon solar cells deposited by HWCVD and PECVD: Influence on open circuit voltage Mai Y, Klein S, Geng X, Hulsbeck M, Carius R, Finger F
276 - 279	Thin film micro- and polycrystalline silicon nip cells on stainless steel made by hot-wire chemical vapour deposition Li H, Stolk RL, van der Werf CHM, Rusche MYS, Rath JK, Schropp REI
280 - 283	Optimisation of superstrate solar cells entirely prepared by HWCVD at low substrate temperature Grunsky D, Kupich M, Schroder B
284 - 287	Effect of emitter deposition temperature on surface passivation in hot-wire chemical vapor deposited silicon heterojunction solar cells Wang TH, Iwaniczko E, Page MR, Levi DH, Yan Y, Branz HM, Wang Q
288 - 290	Microsecond minority carrier lifetimes in HWCVD-grown films and implications for thin film solar cells Mason MS, Richardson CE, Atwater HA, Ahrenkiel RK
291 - 294	A combined experimental and computer simulation study of HWCVD nip micro crystalline silicon solar cells Strengers JJH, Rubinelli FA, Rath JK, Schropp REI
295 - 298	One-dimensional simulation study of micro crystalline silicon thin films for solar cell and thin film transistor applications using AMPS-1D Tripathi S, Venkataramani N, Dusane RO, Schroeder B
299 - 302	Self-assembled single wall carbon nanotube field effect transistors and AFM tips prepared by hot filament assisted CVD Marty L, Iaia A, Faucher M, Bouchiat V, Naud C, Chaumont M, Fournier T, Bonnot AM
303 - 306	Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate Fonrodona M, Soler D, Escarre J, Villar F, Bertomeu J, Andreu J, Saboundji A, Coulon N, Mohammed-Brahim I
307 - 309	Preparation of SiNx gate-insulating films for bottom-gate type TFTs by Cat-CVD method Seri Y, Masuda A, Matsumura H
310 - 313	Laser annealed HWCVD and PECVD thin silicon films. Electron field emission O'Neill KA, Shaikh MZ, Lyttle G, Anthony S, Fan YC, Persheyev SK, Rose MJ
314 - 317	Preparation and electron field emission of carbon nanowall by Cat-CVD Itoh T, Shimabukuro S, Kawamura S, Nonomura S
318 - 321	Potential of Cat-CVD deposited a-SiC : H as diffusion barrier layer on low-k HSQ films for ULSI Singh SK, Kumbhar AA, Kothari M, Dusane RO
322 - 325	Investigation of the tantalum catalyst during the hot wire chemical vapor deposition of thin silicon films Grunsky D, Kupich M, Hofferberth B, Schroeder B
326 - 328	Systematic study on photoresist removal using hydrogen atoms generated on heated catalyzer Hashimoto K, Masuda A, Matsumura H, Ishibashi T, Takao K
329 - 331	Enhancement of moisture resistance of spin-on low-k HSQ films by hot wire generated atomic hydrogen treatment Kumbhar AA, Singh SK, Dusane RO
332 - 334	Hot-wire CVD-grown epitaxial Si films on Si(100) substrates and a model of epitaxial breakdown Richardson CE, Mason MS, Atwater HA
335 - 337	Epitaxial thickening by hot wire chemical vapor deposition of polycrystalline silicon seed layers on glass Stradal J, Scholma G, Li H, van der Werf CHM, Rath JK, Widenborg PI, Campbell P, Aberle AG, Schropp REI
338 - 340	mu c-Si : H n-type doped layers resistant against HWCVD i-layers deposited at high temperature and high growth rate Gordijn A, Francke J, Rath JK, Schropp REI
341 - 345	Characterization of polyconjugated thin films synthesized by hot-wire chemical vapor deposition of aniline Zaharias GA, Shi HH, Bent SF
346 - 349	Improvement of indium-tin oxide films on polyethylene terephthalate substrates using hot-wire surface treatment Wuu DS, Lien SY, Mao HY, Wang JH, Wu BR, Yao PC, Hsieh IC, Peng HH, Homg RH, Chuang YC
350 - 353	Photonic amorphous silicon device technology Fortmann CM, Mawyin J, Tonucci RJ, Mahan AH
354 - 357	Simulation of SiH4 adsorption on H/Si(100) surfaces Anan'yina O, Yanovs'ky E
358 - 361	Investigation of aluminium structural properties of poly-Si thin films obtained by induced crystallization in different atmospheres Dimova-Malinovska D, Grigorov V, Nikolaeva-Dimitrova A, Angelov O, Peev N
362 - 365	Structural changes in amorphous carbon nitride films due to bias voltage Champi A, Marques FC
366 - 369	Pulsed laser deposition of zinc oxide Villanueva YY, Liu DR, Cheng PT