| 3825 - 3826 |
The proceedings of the 1st International Conference on Microelectronics and Plasma Technology (ICMAP 2008) Preface
[Anonymous] |
| 3827 - 3830 |
Effects of iodine on the initial growth of MOCVD Cu on MPTMS monolayer surface at a low temperature of 110 degrees C
Kim AR, Park HJ, Jeong KH, Lee JG, Nam HS, Lee EG, Kang CH |
| 3831 - 3836 |
A diffusion study in the barrier of metallized amorphous binary alloys with numerical approach
Li C, Hsieh JH, Tang ZZ, Cheng JC |
| 3837 - 3840 |
Electrical and structural properties of TaSiN electrode for phase change random access memory
Jung KM, Jung MS, Kim YB, Choi DK |
| 3841 - 3843 |
Characterization and Cu electroless plating of laser-drilled through-wafer via-holes in GaN/Al2O3
Ahn J, Kim HY, Koo HC, Kim JJ, Kim J |
| 3844 - 3846 |
Issues of contact etching and pre-treatment in Schottky contact
Lee H, Shin K, Cho N, Min G, Kang C, Han W, Moon J |
| 3847 - 3849 |
Low-k film damage-resistant CO chemistry-based ash process for low-k/Cu interconnection in flash memory devices
Lee J, Park WJ, Kim DH, Choi J, Shin K, Chung I |
| 3850 - 3853 |
The power source effect on SiOx coating deposition by plasma enhanced chemical vapor deposition
Zhang JF, Chen Q, Zhang YF, Liu FP, Liu ZW |
| 3854 - 3858 |
Effect of a pulsed Nd:YAG laser irradiation on multi-walled carbon nanotubes film
Nakamiya T, Ueda T, Ikegami T, Mitsugi F, Ebihara K, Sonoda Y, Iwasaki Y, Tsuda R |
| 3859 - 3861 |
Fabrication of GaN nanorods by inductively coupled plasma etching via SiO2 nanosphere lithography
Kim BJ, Jung H, Kim HY, Bang J, Kim J |
| 3862 - 3865 |
Silicon template fabrication for imprint lithography with a very smooth side wall profile
Kawata H, Matsue M, Kubo K, Yasuda M, Hirai Y |
| 3866 - 3869 |
Removing 20 nm ceramic particles using a supersonic particle beam from a contoured Laval nozzle
Hwang KS, Lee MJ, Yi MY, Lee JW |
| 3870 - 3873 |
Ultraviolet photodetectors made from SnO2 nanowires
Wu JM, Kuo CH |
| 3874 - 3878 |
Material characteristics of sputter-deposited Zr-doped In2O3/ZnO heterostructures on sapphire (0001) substrates
Liang YC |
| 3879 - 3882 |
Fabrication of high-speed polyimide-based humidity sensor using anisotropic and isotropic etching with ICP
Kim JS, Lee MJ, Kang MS, Yoo KP, Kwon KH, Singh VR, Min NK |
| 3883 - 3887 |
Flexible electrochemical biosensors based on O-2 plasma functionalized MWCNT
Lee JY, Park EJ, Lee CJ, Kim SW, Pak JJ, Min NK |
| 3888 - 3891 |
Photocatalytic degradation of 2,4-dichlorophenol wastewater using porphyrin/TiO2 complexes activated by visible light
Chang MY, Hsieh YH, Cheng TC, Yao KS, Wei MC, Chang CY |
| 3892 - 3895 |
Interface roughness effect between gate oxide and metal gate on dielectric property
Son JY, Maeng WJ, Kim WH, Shin YH, Kim H |
| 3896 - 3899 |
Effect of yttrium doping on the dielectric properties of CaCu3Ti4O12 thin film produced by chemical solution deposition
Saji VS, Choe HC |
| 3900 - 3903 |
Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
Kim WS, Park SK, Moon DY, Kang BW, Kim HD, Park JW |
| 3904 - 3907 |
Colloidal templating for producing hollow ZnO shells: Fabrication, growth and electrical properties
Moon J, Park JA, Lee SJ, Zyung T |
| 3908 - 3911 |
GaN nanowires sputtered with Ag shell layers
Kim HW, Kebede MA, Kim HS, Lee C |
| 3912 - 3915 |
Comparative study of electro-physical properties of heterostructures containing PECVD nanocrystalline and anodic porous silicon layers
Vikulov VA, Korobtsov VV, Dimitriev AA, Kim K, Jung S, Yi J |
| 3916 - 3918 |
Nonvolatile memory devices based on ZnO/polyimide nanocomposite sandwiched between two C-60 layers
Li F, Kim TW, Dong W, Kim YH |
| 3919 - 3922 |
Process optimization of CF4/Ar plasma etching of Au using I-optimal design
Kang TY, Kim G, Cho IH, Seo D, Hong SJ |
| 3923 - 3926 |
Optical characterization of BaSm2Ti4O12 thin films by spectroscopic ellipsometry
Yoon JJ, Hwang SY, Kang YJ, Kim YD, Jeong YH, Nahm S |
| 3927 - 3930 |
Characteristics of plasma hydrogenated ZnO films oriented along the (11-20) plane grown by pulsed laser deposition
Song H, Kim JH, Kim EK, Hwang SM |
| 3931 - 3934 |
Effect of a ZnO buffer layer on the characteristics of MgZnO thin films grown on Si (100) substrates by radio-frequency magnetron sputtering
Moon JY, Kim JH, Kim H, Lee HS, Kim YY, Cho HK, Kim HS |
| 3935 - 3937 |
Customized step coverage of copper seed layer using Eni-PVD (energetic neutral and ion physical vapor deposition)
Lim ST, Park YC, Yoo SJ, Lee BJ |
| 3938 - 3941 |
Highly selective dry etching of alternating phase-shift mask (PSM) structures for extreme ultraviolet lithography (EUVL) using inductively coupled plasmas (ICP)
Jung HY, Park YR, Lee HJ, Lee NE, Jeong CY, Ahn J |
| 3942 - 3946 |
Effect of etching on dielectric constant and surface composition of SiCOH low-k films in inductively coupled fluorocarbon plasmas
Lee S, Woo J, Jung D, Yang J, Boo JH, Kim H, Chae H |
| 3947 - 3949 |
Selective liquid phase deposition of silicon oxide at low temperature for nanometer-scale structures
Kim KS, Roh Y |
| 3950 - 3953 |
Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals
Lee JH, Lee JS, Cha SN, Kim JM, Seo DS, Bin Im W, Hong JP |
| 3954 - 3957 |
Application of level set method in simulation of surface roughness in nanotechnologies
Radmilovic-Radjenovic M, Radjenovic B, Petrovic ZLJ |
| 3958 - 3962 |
Influence of the additive Ag for crystallization of amorphous Ge-Sb-Te thin films
Song KH, Kim SW, Seo JH, Lee HY |
| 3963 - 3966 |
Enhancement of optical properties of InAs quantum dots grown by using periodic arsine interruption
Kim J, Yang C, Sim U, Lee J, Yoon E, Lee Y |
| 3967 - 3970 |
The effect of the H-2 flow rate on the structure and optical properties of TiO2 films deposited by inductively coupled plasma assisted chemical vapor deposition
Jang DS, Lee HY, Lee JJ |
| 3971 - 3974 |
Fabrication of polycrystalline silicon thin films on glass substrates using fiber laser crystallization
Dao VA, Han K, Heo J, Kyeong D, Kim J, Lee Y, Kim Y, Jung S, Kim K, Yi J |
| 3975 - 3978 |
Growth studies and characterization of silicon nitride thin films deposited by alternating exposures to Si2Cl6 and NH3
Park K, Yun WD, Choi BJ, Kim HD, Lee WJ, Rha SK, Park CO |
| 3979 - 3982 |
Effects of group-III elements on the growth kinetics of shape-engineered InAs/InAlGaAs quantum dots
Yang Y, Jo B, Kim J, Lee KJ, Ko M, Lee CR, Kim JS, Oh DK, Kim JS, Leem JY |
| 3983 - 3986 |
Enhancement in the gain of quantum dot laser by increasing overlap integral between electron and hole wave-functions
Jo B, Yang Y, Kim J, Ko M, Lee KJ, Lee CR, Kim JS, Choi BS, Oh DK, Leem JY, Kim JS |
| 3987 - 3989 |
Impurity dependent semiconductor type of epitaxial CuFeO2 (111) thin films deposited by using a pulsed laser deposition
Choi DH, Moon SJ, Hong JS, An SY, Shim IB, Kim CS |
| 3990 - 3994 |
High quality Ge epitaxial layers on Si by ultrahigh vacuum chemical vapor deposition
Kim HW, Shin KW, Lee GD, Yoon E |
| 3995 - 3998 |
Microstructural and textural characterization in MgO thin film using HRTEM
Kim KH, Lee MS, Choi JS, Ahn JP |
| 3999 - 4002 |
The deposition of amorphous carbon thin films for hard mask applications by reactive particle beam assisted sputtering process
Lee T, Min NK, Lee HW, Jang J, Lee D, Hong M, Kwon KH |
| 4003 - 4006 |
Electrical properties and microstructural characterization of single ZnO nanowire sensor manufactured by FIB
Yoon SW, Seo JH, Kim KH, Ahn JP, Seong TY, Lee KB, Kwon H |
| 4007 - 4010 |
Inkjet-printed InGaZnO thin film transistor
Kim GH, Kim HS, Shin HS, Ahn BD, Kim KH, Kim HJ |
| 4011 - 4014 |
Thin film transistors by solution-based indium gallium zinc oxide/carbon nanotubes blend
Lee KW, Heo KY, Oh SH, Moujoud A, Kim GH, Kim HJ |
| 4015 - 4018 |
Amorphous indium tin oxide electrodes for piezoelectric and light-emitting device deposited by vacuum roll to roll process
Ie S, Kim JH, Bae BT, Park DH, Choi JW, Choi WK |
| 4019 - 4022 |
Development of inverted OLED with top ITO anode by plasma damage-free sputtering
Lee Y, Kim J, Jang JN, Yang IH, Kwon S, Hong M, Kim DC, Oh KS, Yoo SJ, Lee BJ, Jang WG |
| 4023 - 4026 |
Properties of excited xenon atoms in a plasma display panel
Uhm HS, Hong BH, Oh PY, Choi EH |
| 4027 - 4030 |
Secondary electron emission characteristics of MgO-ZnO alloy thin film layer for AC PDP
Ahn SG, Yoon SH, Kim YS |
| 4031 - 4034 |
Field emission characteristics of fast grown nanocrystalline diamond/amorphous carbon composite films by microwave plasma-enhanced chemical deposition method
Liu WJ, Guo XJ, Chang CL, Li CH, Hsu CW |
| 4035 - 4038 |
Effect of silver doping on optical property of diamond like carbon films
Ahmed SF, Moon MW, Lee KR |
| 4039 - 4042 |
Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaN
Kim HK, Yi MS, Lee SN |
| 4043 - 4046 |
Characteristics of ITO electrode grown by linear facing target sputtering with ladder type magnetic arrangement for organic light emitting diodes
Jeong JA, Kim HK, Lee JY, Lee JH, Bae HD, Tak YH |
| 4047 - 4051 |
Etch characteristics of indium zinc oxide thin films using inductively coupled plasma of a Cl-2/Ar gas
Lee DY, Chung CW |
| 4052 - 4055 |
Production of nanocrystalline Y2O3:Eu powder by microwave plasma-torch and its characterization
Cho SC, Uhm HS, Bang CU, Lee DK, Han CS |
| 4056 - 4060 |
Molecular layer deposition of ZrO2-based organic-inorganic nanohybrid thin films for organic thin film transistors
Lee BH, Im KK, Lee KH, Im S, Sung MM |
| 4061 - 4064 |
Crystallization and electrical properties of ITO:Ce thin films for flat panel display applications
Il Kim S, Cho SH, Choi SR, Oh MC, Jang JH, Song PK |
| 4065 - 4069 |
Atmospheric pressure PECVD of SiO2 thin film at a low temperature using HMDS/O-2/He/Ar
Kim YS, Lee JH, Lim JT, Park JB, Yeom GY |
| 4070 - 4073 |
Crystallization of amorphous silicon thin film by using a thermal plasma jet
Lee HS, Choi S, Kim SW, Hong SH |
| 4074 - 4077 |
Effect of barrier layers on the properties of indium tin oxide thin films on soda lime glass substrates
Lee JM, Choi BH, Ji MJ, An YT, Park JH, Kwon JH, Ju BK |
| 4078 - 4081 |
Transparent amorphous In-Ga-Zn-O thin film as function of various gas flows for TFT applications
Jung CH, Kim DJ, Kang YK, Yoon DH |
| 4082 - 4085 |
A study on the driving discharge characteristics of the AC PDP packaged with in-situ vacuum sealing with the MgO layer coated by optimum evaporation rate
Li ZH, Kwon SJ |
| 4086 - 4089 |
Characterization of low mole fraction In-doped-ZnO/Si (111) heterostructure grown by pulsed laser deposition
Lee JY, Jang BR, Lee JH, Kim HS, Cho HK, Moon JY, Lee HS, Lee WJ, Baek JW |
| 4090 - 4093 |
Radio frequency source power effect on silicon nitride films deposited by a room-temperature pulsed-PECVD
Kim B, Kim S |
| 4094 - 4099 |
Process development of ITO source/drain electrode for the top-gate indium-gallium-zinc oxide transparent thin-film transistor
Cheong WS, Yoon YS, Shin JH, Hwang CS, Chu HY |
| 4100 - 4103 |
Residual stress on nanocrystalline silicon thin films deposited under energetic ion bombardment by using internal ICP-CVD
Lee HC, Hong SP, Kang SK, Yeom GY |
| 4104 - 4107 |
Fabrication of nano-sized metal patterns on flexible polyethylene-terephthalate substrate using bi-layer nanoimprint lithography
Hwang SY, Jung HY, Jeong JH, Lee H |
| 4108 - 4110 |
Effect of the plasma treatment of anode electrode of the organic light-emitting diodes on the growth of hole-injection layer
Park YW, Jang JH, Kim YM, Choi JH, Park TH, Choi J, Ju BK |
| 4111 - 4114 |
Color tuning of red phosphorescence: New iridium complexes containing fluorinated 2,3-diphenylquinoxaline ligands
Ahn SY, Lee HS, Seo JH, Kim YK, Ha Y |
| 4115 - 4118 |
Evaluation of Y2O3 gate insulators for a-IGZO thin film transistors
Cho YJ, Shin JH, Bobade SM, Kim YB, Choi DK |
| 4119 - 4121 |
Efficient red electrophosphorescent organic light-emitting diodes based on the new sensitized heteroleptic tris-cyclometalated Ir(III) complexes
Seo JH, Lee SC, Kim YK, Kim YS |
| 4122 - 4126 |
High efficiency green phosphorescent organic light emitting device with (TCTA/TCTA(0.5)TPBi(0.5)/TPBi): Ir(ppy)(3) emission layer
Jang JG, Shin HK |
| 4127 - 4130 |
Tantalum capping on platinum thin heater for selective area heating
Jeong WH, Kim DK, Lee CH, Jeong TH, Hwang TH, Kim HJ |
| 4131 - 4134 |
Electroluminescence and impedance analyses of organic light emitting diodes using anhydride materials as cathode interfacial layers
Nam E, Park H, Park K, Moon MR, Sohn S, Jung D, Yi J, Chae H, Kim H |
| 4135 - 4137 |
Fabricating gate insulator by low temperature solution-based process
Kim SJ, Kim DL, Kim HJ |
| 4138 - 4142 |
Frequency upconversion fluorescence studies of Er3+/Yb3+-codoped KNbO3 phosphors
Balakrishnaiah R, Kim DW, Yi SS, Kim KD, Kim SH, Jang KW, Lee HS, Jeong JH |
| 4143 - 4146 |
Improving light efficiency of white polymer light emitting diodes by introducing the TPBi exciton protection layer
Shin SB, Gong SC, Lee HM, Jang JG, Gong MS, Ryu SO, Lee JY, Chang YC, Chang HJ |
| 4147 - 4151 |
On the mechanism of conductivity enhancement in plasma treated poly(3,4-ethylenedioxythiophene) films
Kim TW, Woo HY, Jung WG, Ihm DW, Kim JY |
| 4152 - 4155 |
The effect of Fe-doped magnesium oxide thin film in alternative current plasma display panel
Ok JW, Lee DK, Kim DH, Lee HJ, Lee HJ, Park CH |
| 4156 - 4160 |
In-situ blends of polypyrrole/poly(3,4-ethylenedioxythiopene) using vapor phase polymerization technique
Kim DO, Lee PC, Kang SJ, Jang K, Lee JH, Cho MH, Nam JD |
| 4161 - 4164 |
Effects of surface treatments using PECVD-grown hexamethyldisiloxane on the performance of organic thin-film transistor
Moon MR, Nam E, Woo J, Lee S, Park K, Jung D, Kim H, Lee HJ |
| 4165 - 4169 |
Study of the inductively coupled plasma assisted DC magnetron sputtering (ICPDMS) during ITO deposition
Yang IH, Lee Y, Jang JN, Hong M |
| 4170 - 4173 |
Effects of exo-electron emission from MgO thin film on statistical delay of glow discharge of ac-PDP
Hong CR, Yoon SH, Kim YS |
| 4174 - 4178 |
Phase, morphology, and dimension control of CIS powders prepared using a solvothermal process
Chang CH, Ting JM |
| 4179 - 4183 |
Thermal effects and plasma damage upon encapsulation of polymer solar cells
Chen TN, Wuu DS, Lin CY, Wu CC, Horng RH |
| 4184 - 4187 |
Generation of size and structure controlled Si nanoparticles using pulse plasma for energy devices
Kim K, Park JH, Doo SG, Nam JD, Kim T |
| 4188 - 4191 |
Control of plasma process instabilities during thin silicon film deposition
Hrunski D, Grahlert W, Beese H, Kilper T, Gordijn A, Appenzeller W |
| 4192 - 4195 |
Modification of low temperature deposited LiMn2O4 thin film cathodes by oxygen plasma irradiation
Chen CC, Chiu KF, Lin KM, Lin HC |
| 4196 - 4198 |
Fabrication of dye-sensitized solar cells using TiO2-nanotube arrays on Ti-grid substrates
Chun KY, Park BW, Sung YM, Kwak DJ, Hyun YT, Park MW |
| 4199 - 4203 |
Thermoelectric properties of the bismuth-antimony-telluride and the antimony-telluride films processed by electrodeposition for micro-device applications
Lim SK, Kim MY, Oh TS |
| 4204 - 4206 |
Monolithic double rectangular spiral thin-film inductors implemented with NiFe magnetic cores for on-chip dc-dc converter applications
Kim SG, Park HS, Koo JG, Kim JD, Rho TM, Lee YH, Kim BW, Kang JY |
| 4207 - 4210 |
Thin film encapsulation of DSSCs on plastic substrate
Huang LT, Lin MC, Chang ML, Wang RR, Lin HC |
| 4211 - 4214 |
Structure and thermal properties of transparent conductive nanoporous F:SnO2 films
Kuantama E, Han DW, Sung YM, Song JE, Han CH |
| 4215 - 4217 |
Electrochemical characteristics of LiNiO2 films prepared for charge storable electrode application
Han CH, Kim JH, Paeng SH, Kwak DJ, Sung YM |
| 4218 - 4221 |
Supermagnetron plasma CVD of highly effective a-CNx:H electron-transport and hole-blocking films suited to Au/a-CNx:H/p-Si photovoltaic cells
Kinoshita H, Kiyama M, Suzuki H |
| 4222 - 4225 |
Low energy O-2(+) and N2O+ ion beam modification of polyimide for improving adhesive strength of Cu/PI in roll-to-roll process
Park DH, Choi WK |
| 4226 - 4228 |
Microwave plasma torch operating at a low pressure for material processing
Hong YC, Uhm HS, Cho SC |
| 4229 - 4232 |
Diamond-like carbon thin films synthesis by low temperature atmospheric pressure plasma method
Liu WJ, Guo XJ, Chang CL, Lu JH |
| 4233 - 4237 |
3D simulations of the profile evolution during anisotropic wet etching of silicon
Radjenovic B, Radmilovic-Radjenovic M |
| 4238 - 4241 |
Plasma analyses and structural properties of Cr-N-C-O coatings synthesized by a cathodic arc evaporation process
Chang YY, Yang SJ, Wu WT |
| 4242 - 4245 |
Etching characteristics and mechanism of ZnO thin films in inductively coupled HBr/Ar plasma
Ham YH, Efremov A, Yun SJ, Kim JK, Min NK, Kwon KH |
| 4246 - 4250 |
A study on dry etching for profile and selectivity of ZrO2 thin films over Si by using high density plasma
Woo JC, Kim SG, Koo JG, Kim GH, Kim DP, Yu CH, Kang JY, Kim CI |
| 4251 - 4254 |
Characteristic study of atmospheric pressure microplasma jets with various operating conditions
Kim SJ, Chung TH, Bae SH |
| 4255 - 4259 |
Impact reliability estimation of lead free solder joint with IMC layer
Kim JM, Woo SW, Chang YS, Kim YJ, Choi JB, Ji KY |
| 4260 - 4263 |
Visible-light photocatalytic activity of anatase TiO2 treated with argon plasma
Chae YK, Mori S, Suzuki M |
| 4264 - 4267 |
Catalyst-free low-temperature growth of carbon nanofibers by microwave plasma-enhanced CVD
Mori S, Suzuki M |
| 4268 - 4271 |
The influences of processing parameters on structure of amine-containing film and its cell culture adsorption in pulsed DBD plasma
Hu WJ, Chen Q, Cai HP, Zhang YF |
| 4272 - 4275 |
Feasibility study of the sterilization of pork and human skin surfaces by atmospheric pressure plasmas
Moon SY, Kim DB, Gweon B, Choe W, Song HP, Jo C |
