Journal of Crystal Growth

Journal of Crystal Growth, Vol.425 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (92 articles)

1 - 1	Preface of the 18th International Conference on Molecular Beam Epitaxy (MBE 2014) Brown AS, Ptak AJ
2 - 4	Determination of N-/Ga-rich growth conditions, using in-situ auger electron spectroscopy Svensson SP, Sarney WL, Yu KM, Ting M, Calley WL, Novikov SV, Foxon CT, Walukiewicz W
5 - 8	Desorption mass spectrometry: Revisiting the in-situ calibration technique for mixed group-V alloy MBE growth of similar to 3.3 mu m diode lasers Kaspi R, Lu CT, Yang C, Newell TC, Luong S
9 - 12	Pulsed growth techniques in plasma-assisted molecular beam epitaxy of AlxGa1-xN layers with medium Al content (x=0.4-0.6) Nechaev DV, Brunkov PN, Troshkov SI, Jmerik VN, Ivanov SV
13 - 15	In situ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE Sasaki T, Takahasi M, Suzuki H, Ohshita Y, Yamaguchi M
16 - 20	In-situ monitoring during MBE growth of InAs based heterostructures Bhatnagar K, Rojas-Ramirez J, Caro M, Contreras R, Henninger B, Droopad R
21 - 24	Reflectance-difference spectroscopy as a probe for semiconductor epitaxial growth monitoring Lastras-Martinez A, Ortega-Gallegos J, Guevara-Macias LE, Nunez-Olvera O, Balderas-Navarro RE, Lastras-Martinez LF, Lastras-Montano LA, Lastras-Montano MA
25 - 28	Control of anion incorporation in the molecular beam epitaxy of ternary antimonide superlattices for very long wavelength infrared detection Haugan HJ, Brown GJ, Elhamri S, Grazulis L
29 - 32	Growth of InAs-InAsSb SLS through the use of digital alloys Schuler-Sandy T, Casias BKL, Casias L, Mathews S, Kadlec C, Tian Z, Plis E, Myers S, Krishna S
33 - 38	AlxIn1-xAsySb1-y alloys lattice matched to InAs(100) grown by molecular beam epitaxy Rojas-Ramirez JS, Wang S, Contreras-Guerrero R, Caro M, Bhatnagar K, Holland M, Oxland R, Doornbos G, Passlack M, Diaz CH, Droopad R
39 - 42	Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy da Silva SFC, Lanzoni EM, Malachias A, Deneke C
43 - 48	Defect creation in In GaAs/GaAs multiple quantum wells-I. Structural properties Karow MM, Faleev NN, Smith DJ, Honsberg CB
49 - 53	Defect Creation in InGaAs/GaAs Multiple Quantum Wells - II. Optical Properties Karow MM, Faleev NN, Maros A, Honsberg CB
54 - 59	A study of MBE growth-related defects in InAs/GaSb type-II supperlattices for long wavelength infrared detectors Klin O, Snapi N, Cohen Y, Weiss E
60 - 63	Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells Tukiainen A, Likonen J, Toikkanen L, Leinonen T
64 - 69	Improved electron transport properties of InSb quantum well structure using stepped buffer layer for strain reduction Fujikawa S, Taketsuru T, Tsuji D, Maeda T, Fujishiro HI
70 - 75	Growth variations and scattering mechanisms in metamorphic In0.75Ga0.25As/In-0.75 Al0.25As quantum wells grown by molecular beam epitaxy Chen C, Farrer I, Holmes SN, Sfigakis F, Fletcher MP, Beere HE, Ritchie DA
76 - 79	Low temperature transport property of the InSb and InAsSb quantum wells with Al0.1In0.9Sb barrier layers grown by MBE Shibasaki I, Ishida S, Geka H, Manago T
80 - 84	InAs nanowires with AlxGa1-xSb shells for band alignment engineering Rieger T, Grutzmacher D, Lepsa MI
85 - 88	Si-doped AlGaAs/GaAs(631)A heterostructures grown by MBE as a function of the As-pressure Mendez-Garcia VH, Shimomura S, Gorbatchev AY, Cruz-Hernandez E, Vazquez-Cortes D
89 - 93	Effect of bismuth on structural and electrical properties of In As films grown on GaAs substrates by MBE Zhao H, Malko A, Lai ZH
94 - 98	Structural properties of AlGaP films on GaP grown by gas-source molecular-beam epitaxy Dadgostar S, Hussein EH, Schmidtbauer J, Boeck T, Hatami F, Masselink WT
99 - 101	Crystal structure of low-temperature-grown In0.45Ga0.55As on an InP substrate Tominaga Y, Tomiyasu Y, Kadoya Y
102 - 105	Crystal quality of InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices Gozu S, Mozume T
106 - 109	Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (311)B GaAs with AlAs cap Lu XM, Matsubara S, Nakagawa Y, Kitada T, Isu T
110 - 114	Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM Wood MR, Kanedy K, Lopez F, Weimer M, Klem JF, Hawkins SD, Shaner EA, Kim JK
115 - 118	Low-temperature growth of InGaN films over the entire composition range by MBE Fabien CAM, Gunning BP, Doolittle WA, Fischer AM, Wei YO, Xie HG, Ponce FA
119 - 124	Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates Hardy MT, Storm DF, Nepal N, Katzer DS, Downey BP, Meyer DJ
125 - 128	Molecular beam epitaxy of free-standing wurtzite AlxGa1-xN layers Novikov SV, Staddon CR, Martin RW, Kent AJ, Foxon CT
129 - 132	High growth speed of gallium nitride using ENABLE-MBE Williams JJ, Fischer AM, Williamson TL, Gangam S, Faleev NN, Hoffbauer MA, Honsberg CB
133 - 137	Low temperature AIN growth by MBE and its application in HEMTs Faria FA, Nomoto K, Hu ZY, Rouvimov S, Xing HL, Jena D
138 - 140	A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate Makimoto T, Kumakura K, Maeda M, Yamamoto H, Horikoshi Y
141 - 144	Dislocation reduction in GaN grown on nano-patterned templates Yang WC, Chen KY, Cheng KY, Wang YL, Hsieh KC, Cheng KY
145 - 148	Influence of the substrate grade on structural and optical properties of GaN/AlGaN superlattices Schubert F, Zybell S, Heitmann J, Mikolajick T, Schmult S
149 - 153	Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon Park BG, Kumar RS, Moon ML, Kim MD, Kang TW, Yang WC, Kim SG
154 - 157	Influence of (7 x 7)-"1 x 1" phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si (111) Fissel A, Chaudhuri AR, Krugener J, Osten HJ
158 - 161	Evaluation of the electronic states in highly Ce doped Si films grown by low temperature molecular beam epitaxy system Miyata Y, Nose Y, Yoshimura T, Ashida A, Fujimura N
162 - 166	Electrical characteristics of amorphous Si:H/crystalline Si0.3Ge0.7 heterojunction solar cells grown on compositionally graded buffer layers Oshima R, Yamanaka M, Kawanami H, Sakata I, Matsubara K, Sugaya T
167 - 171	Strain-compensated Ge/Si1-xCx quantum dots with Si mediating layers grown by molecular beam epitaxy Gotoh K, Oshima R, Sugaya T, Sakata I, Matsubara K, Kondo M
172 - 176	Sn-rich cubic phase nanocrystals in a SiGe/Si(001) quantum well Tonkikh AA, Zakharov ND, Talalaev VG, Eisenschmidt C, Schilling J, Werner P
177 - 180	Transferring-free and large-area graphitic carbon film growth by using molecular beam epitaxy at low growth temperature Lin MY, Wang CH, Pao CW, Lin SY
181 - 185	Molecular beam epitaxial re-growth of CdTe, CdTe/CdMgTe and CdTe/CdZnTe double heterostructures on CdTe/InSb(100) substrates with As cap Seyedmohammadi S, DiNezza MJ, Liu S, King P, LeBlanc EG, Zhao XH, Campbell C, Myers TH, Zhang YH, Malik RJ
186 - 190	Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy Fan WC, Huang SH, Chou WC, Tsou MH, Yang CS, Chia CH, Phu ND, Hoang LH
191 - 194	Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire Nakasu T, Aiba T, Yamashita S, Hattori S, Sun W, Taguri K, Kazami F, Kobayashi M, Asahi T
195 - 198	MBE growth and interfaces characterizations of strained HgTe/CdTe topological insulators Thomas C, Baudry X, Barnes JP, Veillerot M, Jouneau PH, Pouget S, Crauste O, Meunier T, Levy LP, Ballet P
199 - 202	Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE Takamatsu S, Nomura I, Shiraishi T, Kishino K
203 - 206	Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy Thiru S, Asakawa M, Honda K, Kawaharazuka A, Tackeuchi A, Makimoto T, Horikoshi Y
207 - 211	Strain compensated CdSe/ZnSe/ZnCdMgSe quantum wells as building blocks for near to mid-IR intersubband devices De Jesus J, Chen GP, Hernandez-Mainet LC, Shen AD, Tamargo MC
212 - 215	MBE growth, structural and transport properties of alternately-strained ZnSSe/CdSe superlattices with effective band-gap 2.5-2.6 eV Sorokin SV, Gronin SV, Evropeytsev EA, Sedova IV, Toropov AA, Ivanov SV
216 - 220	Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy Chen CY, Hsiao LH, Chyi JI
221 - 224	Intersubband absorption in ZnO/ZnMgO quantum wells grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates Zhao KL, Chen GP, Hernandez J, Tamargo MC, Shen AD
225 - 229	Molecular beam epitaxy growth of niobium oxides by solid/liquid state oxygen source and lithium assisted metal-halide chemistry Tellekamp MB, Greenlee JD, Shank JC, Doolittle WA
230 - 233	Epitaxial growth of high quality La2CuO4 film on LaSrAlO4 substrate with introduction of ultrathin amorphous layer of La2CuO4 Li BS, Matsui Y, Miyamoto T, Yada H, Sawa A, Okamoto H
234 - 236	Growth temperature and surfactant effects on the properties of mixed group V alloys Svensson SP, Sarney WL, Connelly BC, Anderson EM, Millunchick JM
237 - 240	MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization Richards RD, Bastiman F, Roberts JS, Beanland R, Walker D, David JPR
241 - 244	Bi flux-dependent MBE growth of GaSbBi alloys Rajpalke MK, Linhart WM, Yu KM, Jones TS, Ashwin MJ, Veal TD
245 - 249	Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy Beaudoin M, Lewis RB, Andrews JJ, Bahrami-Yekta V, Masnadi-Shirazi M, O'Leary SK, Tiedje T
250 - 254	Investigation of MBE-grown InAs1-xBix alloys and Bi-mediated type-II superlattices by transmission electron microscopy Lu J, Webster PT, Liu S, Zhang YH, Johnson SR, Smith DJ
255 - 257	Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys Sarney WL, Svensson SP, Novikov SV, Yu KM, Walukiewicz W, Ting M, Foxon CT
258 - 261	Physical properties of InGaO3(ZnO)(m) with various content ratio grown by PAMBE Yang CS, Huang SJ, Kao YC, Chen GH, Chou WC
262 - 267	Heterointegration of III-V on silicon using a crystalline oxide buffer layer Bhatnagar K, Rojas-Ramirez JS, Contreras-Guerrero R, Caro M, Droopad R
268 - 273	Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer Alaskar Y, Arafin S, Lin QY, Wickramaratne D, Mckay J, Norman AG, Zhang Z, Yao LC, Ding F, Zou J, Goorsky MS, Lake RK, Zurbuchen MA, Wang KL
274 - 278	The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy Schumann T, Lopes JMJ, Wofford JM, Oliveira MH, Dubslaff M, Hanke M, Jahn U, Geelhaar L, Riechert H
279 - 282	Quest for high-Curie temperature MnxGe1-x diluted magnetic semiconductors for room-temperature spintronics applications Nie TX, Tang JS, Wang KL
283 - 286	GaSb/GaAs quantum dots and rings grown under periodical growth mode by using molecular beam epitaxy Chen HA, Shih TC, Tang SF, Weng PK, Gau YT, Lin SY
287 - 290	Fabrication of GaSb quantum rings on GaAs(001) by droplet epitaxy Kunrugsa M, Tung KHP, Danner AJ, Panyakeow S, Ratanathammaphan S
291 - 294	Molecular beam epitaxial growth of GaSb quantum dots on (001) GaAs substrate with InGaAs insertion layer Khoklang K, Kiravittaya S, Kunrugsa M, Prongjit P, Thainoi S, Ratanathammaphan S, Panyakeow S
295 - 298	Electron g-factor and spin decoherence in GaAs quantum nanodisks fabricated by fully top-down lithography Tanaka T, Kiba T, Higo A, Thomas C, Tamura Y, Samukawa S, Murayama A
299 - 302	High-density 1.54 mu m InAs/InGaAlAs/InP(100) based quantum dots with reduced size inhomogeneity Banyoudeh S, Reithmaier JP
303 - 306	Terahertz emission from a coupled multilayer cavity with InAs quantum dots Ogarane M, Katoh S, Nakagawa Y, Morita K, Kitada T, Isu T
307 - 311	Molecular beam epitaxy grown indium self-assembled plasmonic nanostructures Gibson R, Gehl M, Sears J, Zandbergen S, Nader N, Keiffer P, Hendrickson J, Arnoult A, Khitrova G
312 - 315	Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots Zhao ZX, Laghumavarapu RB, Simmonds PJ, Ji HM, Liang BL, Huffaker DL
316 - 321	Novel selective area growth (SAG) method for regularly arranged AlGaN nanocolumns using nanotemplates Yamano K, Kishino K, Sekiguchi H, Oto T, Wakahara A, Kawakami Y
322 - 325	InGaP/GaAs/InGaAsP triple junction solar cells grown using solid-source molecular beam epitaxy Sugaya T, Makita K, Mizuno H, Mochizuki T, Oshima R, Matsubara K, Okano Y, Niki S
326 - 329	Recombination current in AlGaAs/GaAs superlattice solar-cells grown by molecular beam epitaxy Kawaharazuka A, Nishinaga J, Horikoshi Y
330 - 332	Effects of surface barrier layer in AlGaAs/GaAs solar cells Urabe H, Kuramoto M, Nakano T, Kawaharazuka A, Makimoto T, Horikoshi Y
333 - 336	Optical properties of AlxGa1-xAs/GaAs superlattice solar cells Kuramoto M, Urabe H, Nakano T, Kawaharazuka A, Nishinaga J, Makimoto T, Horikoshi Y
337 - 340	Effects of continuously graded or step-graded InxAl1-xAs buffer on the performance of InP-based In0.83Ga0.17As photodetectors Xi SP, Gu Y, Zhang YG, Chen XY, Zhou L, Li AZ, Li H
341 - 345	Position-sensitive multi-wavelength photon detectors based on epitaxial InGaAs/InAlAs quantum wells Ganbold T, Antonelli M, Cautero G, Menk RH, Cucini R, Biasiol G
346 - 350	Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors Chen XY, Gu Y, Zhang YG, Xi SP, Guo ZX, Zhou L, Li AZ, Li H
351 - 356	XB(n)n and XB(p)p infrared detectors Klipstein PC
357 - 359	AlInAsSb for M-LWIR detectors Sarney WL, Svensson SP, Wang D, Donetsky D, Kipshidze G, Shterengas L, Lin Y, Belenky G
360 - 363	Comparison of semi-insulating InAlAs and InP:Fe for InP-based buried-heterostructure QCLs Flores YV, Aleksandrova A, Elagin M, Kischkat J, Kurlov SS, Monastyrskyi G, Hellemann J, Golovynskyi SL, Dacenko OI, Kondratenko SV, Tarasov GG, Semtsiv MP, Masselink WT
364 - 368	Molecular beam epitaxy growth of antimony-based mid-infrared interband cascade photodetectors Tian ZB, Schuler-Sandy T, Krishna S, Tang DH, Smith DJ
369 - 372	MBE-grown long-wavelength interband cascade lasers on InAs substrates Li L, Ye H, Jiang YC, Yang RQ, Keay JC, Mishima TD, Santos MB, Johnson MB
373 - 375	Wavelength tuning of InAs quantum dot laser by micromirror device Yan JY, Gong Q, Kang CZ, Xu HX, Cao CF, Li YY, Wang SM, Wang HL
376 - 380	Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 mu m Gu Y, Zhang YG, Chen XY, Cao YY, Zhou L, Xi SP, Li AZ, Li H
381 - 384	Specific detection of mercury(II) irons using AlGaAs/InGaAs high electron mobility transistors Wang CY, Zhang Y, Guan M, Cui LJ, Ding K, Zhang BT, Lin Z, Huang F, Zeng YP
385 - 388	High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy Chiu PC, Huang HW, Hsueh WJ, Hsin YM, Chen CY, Chyi JI
389 - 392	Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (20(2)over-bar1) AlGaN/GaN buffer layers Young EC, Yonkee BP, Wu F, Saifaddin BK, Cohen DA, DenBaars SP, Nakamura S, Speck JS
393 - 397	InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices Gherasoiu I, Yu KM, Reichertz L, Walukiewicz W
398 - 400	High power nitride laser diodes grown by plasma assisted molecular beam epitaxy Muziol G, Siekacz M, Turski H, Wolny P, Grzanka S, Grzanka E, Feduniewicz-Zmuda A, Borysiuk J, Sobczak K, Domagala J, Nowakowska-Siwinska A, Makarowa I, Perlin P, Skierbiszewski C