Journal of Crystal Growth

Journal of Crystal Growth, Vol.253, No.1-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (79 articles)

1 - 5	Effects of ammonia gas on threshold pressure and seed growth for bulk GaN single crystals by Na flux method Iwahashi T, Kawamura F, Morishita M, Kai Y, Yoshimura M, Mori Y, Sasaki T
6 - 9	The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon Li YX, Guo HY, Liu BD, Liu TJ, Hao QY, Liu CC, Yang DR, Que DL
10 - 15	Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er Chen CY, Chen WD, Song SF, Hsu CC
16 - 25	Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures Miraglia PQ, Preble EA, Roskowski AM, Einfeldt S, Davis RF
26 - 37	Using N-2 as precursor gas in III-nitride CVD growth Danielsson O, Janzen E
38 - 45	Micro-X-ray fluorescence and micro-photoluminescence in InGaAsP and InGaAs layers obtained by selective area growth Sirenka AA, Reynolds CL, Peticolas LJ, Ougazzaden A, Kazimirov A, Huang R, Fontes E, Bilderback D
46 - 51	Characteristics of misfit dislocations in the GaInP/GaAs heterostructures grown by metalorganic chemical vapor deposition Gong JR, Hou SJ, Tseng SF
52 - 58	Growth and transport properties of tin mono sulpho selenide single crystals Patel TH, Vaidya R, Patel SG
59 - 63	The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing Zhang ZY, Jin P, Li CM, Ye XL, Meng XQ, Xu B, Liu FQ, Wang ZG
64 - 70	High-quality GaN/Si(111) epitaxial layers grown with various Al0.3Ga0.7N/GaN superlattices as intermediate layer by MOCVD Jang SH, Lee CR
71 - 76	Modified droplet epitaxy GaAs/AlGaAs quantum dots grown on a variable thickness wetting layer Sanguinetti S, Watanabe K, Tateno T, Gurioli M, Werner P, Wakaki M, Koguchi N
77 - 84	Growth and characterization of Si/SiGe strained-layer superlattices on bulk single-crystal SiGe and Si substrates Sheng SR, Dion M, McAlister SP, Rowell NL
85 - 88	Formation of thin GaN layer on Si (111) for fabrication of high-temperature metal field effect transistors (MESFETs) Yoshida S, Li J, Takehara H, Wada T
89 - 94	Structural characterization of epitaxial Cd1-xZnxTe semiconductor thin films by ion beam techniques Fernandez-Lima F, Larramendi EM, Puron E, Pedrero E, de Melo O, Baptista DL, Zawislak FC
95 - 101	Study of surface defects on 3C-SiC films grown on Si(111) by CVD Hernandez MJ, Ferro G, Chassagne T, Dazord J, Monteil Y
102 - 106	Epitaxial lateral overgrowth of GaSb layers by liquid phase epitaxy Dobosz D, Zytkiewicz ZR, Papis E, Kaminska E, Piotrowska A
107 - 111	Effect of native defects on electrical and optical properties of undoped polycrystalline GaN Park SE, Han WS, Lee HG, O B
112 - 116	Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates Cai LC, Chen H, Bao CL, Huang Q, Zhou JM
117 - 128	Comparison of the ZnO : Al films deposited in static and dynamic modes by reactive mid-frequency magnetron sputtering Hong RJ, Jiang X, Szyszka B, Sittinger V, Xu SH, Werner W, Heide G
129 - 141	Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers Einfeldt S, Reitmeier ZJ, Davis RF
142 - 154	Role of Marangoni convection in Si-Czochralski melts, part I: 3D predictions without crystal Kumar V, Basu B, Enger S, Brenner G, Durst F
155 - 160	Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells Bian LF, Jiang DS, Lu SL
161 - 166	High quality AlGaInP epilayers grown by MOCVD using TBP for red lasers Dong JR, Teng JH, Chua SJ, Wang YJ, Foo BC, Yuan HR, Yuan S
167 - 173	Lateral composition modulation in strain compensated (GaInP)(m)(GaInAs)m short-period superlattices grown on (001) InP by atomic layer molecular beam epitaxy Golmayo D, Dotor ML, Quintana C
174 - 182	Determination of beryllium and self-interstitial diffusion. parameters in InGaAs Marcon J, Ihaddadene M, Ketata K
183 - 189	Crystallographic control in thin-layer silicon depositions by atmospheric-pressure iodine vapor transport Wang TH, Ciszek TF, Page MR
190 - 197	Stranski-Krastanov growth mode in Ge/Si(001) self-assembled quantum dots Santalla SN, Kanyinda-Malu C, de la Cruz RM
198 - 202	Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser Li CM, Liu FQ, Zhang ZY, Meng XQ, Jin P, Wang ZG
203 - 207	Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells Han YJ, Chen H, Yu HB, Li DS, Yan ZB, Huang Q, Zhou JM
208 - 211	Effect of excimer laser irradiation on polycrystalline GaN Park SE, Kim DJ, Han WS, Ban SI, O B
212 - 220	Growth and correlation between composition and structure of (1-x)Pb(Zn1/3Nb2/3)O-3-xPbTiO(3) crystals near the morphotropic phase boundary Bertram R, Reck G, Uecker R
221 - 229	Growth and characterization of 3-in size Tm, Ho-codoped LiYF4 and LiLuF4 single crystals by the Czochralski method Sato H, Bensalah A, Machida H, Nikl M, Fukuda T
230 - 238	Effects of the crystal structure on electrical and optical properties of pyrite FeS2 films prepared by thermally sulfurizing iron films Wan DY, Wang YT, Wang BY, Ma CX, Sun H, Wei L
239 - 242	Fabrication and characterization of p-type ZnO films by pyrolysis of zinc-acetate-ammonia solution Ji ZG, Yang CX, Liu K, Ye ZZ
243 - 245	Observation of S-type negative differential resistance in n-ZnO/p-Si hetero-junctions Ji ZG, Yang CX, Liu K, Ye ZZ
246 - 251	Structural, optical and electrical properties of ZnO thin films prepared by reactive deposition Ji ZG, Liu K, Yang CX, Fan RX, Ye ZZ
252 - 257	Time-resolved photoluminescence study of a ZnO thin film grown on a (100) silicon substrate Guo B, Ye ZZ, Wong KS
258 - 264	Preparation and characteristics of p-type ZnO films by DC reactive magnetron sputtering Ye ZZ, Lu JG, Chen HH, Zhang YZ, Wang L, Zhao BH, Huang JY
265 - 269	Growth and spectroscopic properties of Sr6NdSc(BO3)(6) crystal Lin ZB, Hu ZS, Wang GF
270 - 273	Growth and spectroscopic properties of Nd3+: LaCa4O(BO3)(3) crystals Lu Y, Wang GF
274 - 279	Flux Bridgman growth of Pb[(Zn1/3Nb2/3)(0.93)Ti-0.07]O-3 piezocrystals Xu JY, Tong J, Shi ML, Wu AH, Fan SJ
280 - 285	Effects of intermediate phase C40TiSi(2) on the formation temperature of C54TiSi(2) with a Ta interlayer Wang RN, Feng JY, Huang Y
286 - 289	Growth and optical properties of DyxY1-xAl3(BO3)(4) crystal Li J, Wang JY, Cheng XF, Hu XB, Zhao SR
290 - 296	Characteristics of large-sized Ce : YAG scintillation crystal grown by temperature gradient technique Zhao GJ, Zeng XH, Xu J, Xu YQ, Zhou YZ
297 - 306	Growth of Yb : S-FAP [Yb3+: Sr-5(PO4)(3)F] crystals for the Mercury laser Schaffers KI, Tassano JB, Bayramian AB, Morris RC
307 - 313	Composition, unit cell, parameters, and T-c in hexagonal NiS Borisenko DN, Dubinov AE, Kolesnikov NN, Kudasov YB, Kulakov MP, Shalynin AI
314 - 318	Growth and scintillation properties of Yb-doped Lu3Al5O12 crystals Ogino H, Yoshikawa A, Lee JH, Nikl M, Solovieva N, Fukuda T
319 - 325	Luminescence and optical absorption spectra of heavily Mg-doped LiNbO3 single crystals irradiated by pulsed electron beam Kim IW, Yi SS, Pichugin VF, Yakovlev VY, Dmitriev MS
326 - 339	Growth kinetics and thermal stress in AlN bulk crystal growth Wu B, Ma RH, Zhang H, Dudley M, Schlesser R, Sitar Z
340 - 350	Aluminum doping of epitaxial silicon carbide Forsberg U, Danielsson O, Henry A, Linnarsson MK, Janzen E
351 - 356	Interferometric microscopy observation of the initial stage of electrochemical crystal growth of (DMe-DCNQI)(2)Cu Shimada T, Kaji T, Saiki K, Koma A
357 - 360	Fabrication and characterization of hexagonal wire-like ZnO Chen XY, An CH, Liu JW, Wang X, Qian YT
361 - 365	Solvothermal synthesis and characterization of crystalline CaWO4 nanoparticles Chen SJ, Li J, Chen XT, Hong JM, Xue ZL, You XZ
366 - 373	Studies on inclined nuclei as a cause of crystallinity deterioration in epitaxial CeO2(110) layers on Si(100) substrates Inoue T, Shida S, Sakamoto N, Horikawa A, Ohashi M
374 - 377	Formation of atomically smooth surfaces on SrTiO3 substrates for epitaxial film growth Liu LF, Lu HB, Fei YY, Guo HZ, Xiang WF, Chen ZH
378 - 382	The growth and properties of Ca3TaGa3Si2O14 single crystals Wang ZM, Yuan DR, Cheng XF, Xu D, Lv M, Pan L, Duan XL, Sun HQ, Shi XZ, Lv YQ, Wei XC, Sun ZH, Luan CN, Guo SY, Zhang GH, Wang XQ
383 - 397	Variations of solid-liquid interface in the BGO low thermal gradients Cz growth for diffuse and specular crystal side surface Yuferev VS, Budenkova ON, Vasiliev MG, Rukolaine SA, Shlegel VN, Vasiliev YV, Zhmakin AI
398 - 403	Growth of a new ordered langasite structure compound Ca3TaGa3Si2O14 single crystal Wang ZM, Yuan DR, Cheng ZX, Duan XL, Sun HQ, Shi XZ, Wei XC, Lu YQ, Xu D, Lu MK, Pan LH
404 - 412	Void formation and failure in InGaN/AlGaN double heterostructures Wang YG, Li W, Han PD, Zhang Z
413 - 423	History dependence of primary dendrite spacing during directional solidification of binary metallic alloys and interdendritic convection Chen H, Chen YS, Wu X, Tewari SN
424 - 428	Growth and characterization of a new nonlinear optical crystal-ammonium borodilactate Dhanuskodi S, Mary PAA
429 - 434	Hydrothermal synthesis and characterization of AgInSe2 nanorods Jin Y, Tang KB, An CH, Huang LY
435 - 444	Formation process of sheets and helical forms consisting of strontium carbonate fibrous crystals with silicate Terada T, Yamabi S, Imai H
445 - 451	Preparation and characterization of wire-like Sb2Se3 and flake-like Bi2Se3 nanocrystals Wang DB, Yu DB, Mo MS, Liu XM, Qian YT
452 - 459	New effects of crystal-solution phase equilibria in a model system NaNO3-H2O Kiryanova EV
460 - 466	Crystal growth and characterization of a new nonlinear optical material: Urea L-Malic acid Dixit VK, Vanishri S, Bhat HL, Gomes ED, Belsley M, Santinha C, Arunmozhi G, Venkataramanan V, Proena F, Criado A
467 - 471	A simple method to synthesize PbE (E = S, SE) nanocrystals An CH, Tang KB, Jin Y, Liu JW, Lv H, Qian YT
472 - 480	Growth and characterization of cesium halides with cubic morphologies Arsic J, Reynhout IC, van Enckevort WJP, Vlieg E
481 - 487	Crystal structure and characterization of a novel organic nonlinear optical crystal: L-arginine trifluoroacetate Xu D, Wang XQ, Yu WT, Xu SX, Zhang GH
488 - 495	The role of transport processes in crystallization kinetics of ammonium pentaborate Sahin O, Genli N, Ozdemir M
496 - 503	Calcite overgrowth on carboxylated polymers Dousi E, Kallitsis J, Chrissanthopoulos A, Mangood AH, Dalas E
504 - 511	Kinetics of atomic rearrangement in the processes of crystal growth into undercooled melts Dimitrov VI
512 - 516	The synthesis of Cu3BiS3 nanorods via a simple ethanol-thermal route Chen D, Shen GZ, Tang KB, Liu XM, Qian YT, Zhou GE
517 - 523	The use of oil in a counter-diffusive system allows to control nucleation and coarsening during protein crystallization Bolanos-Garcia VM
524 - 529	Growth of platelets under diffusion conditions. Growth kinetics of platelets obtained on the zinc single crystals and determination of the timing of their appearance (II) Iwanov D
530 - 538	Structural, optical and electrical properties of polycrystalline pyrite (FeS2) films obtained by thermal sulfuration of iron films Meng L, Liu YH, Tian L
539 - 548	Preparation of the initial solid-liquid interface and melt in directional solidification Thi HN, Drevet B, Debierre JM, Camel D, Dabo Y, Billia B
549 - 556	A method to compute the migration rate of planar solid-liquid interfaces in binary alloys Qin RS, Wallach ER
557 - 561	First synthesis of olivine single crystal as large as 250 carats Ito K, Sato H, Kanazawa H, Kawame N, Tamada O, Miyazaki K, Uehara S, Iio Y, Takei H, Kitazawa T, Koike M, Matsushita Y, Ito Y