235 - 242 |
Growth and characterization of boron-doped (111) CVD homoepitaxial diamond films Ri SG, Kato H, Ogura M, Watanabe H, Makino T, Yamasaki S, Okushi H |
243 - 247 |
Morphological and electrical properties of InP grown by solid source molecular beam epitaxy Pi B, Shu YC, Lin YW, Sun JM, Qu SC, Yao JH, Xing XD, Xu B, Shu Q, Wang ZG, Xu J |
248 - 253 |
Microstructure characteristics and interface morphology evolvement of Si-TaSi2 eutectic in situ composite for field emission Cui CJ, Zhang J, Li B, Han M, Liu L, Fu HZ |
254 - 258 |
Strain relaxation of AlN epilayers Stranski-Krastanov GaN/AlN quantum dots grown by organic vapor phase epitaxy Simeonov D, Feltin E, Demangeot K, Pinquier C, Carlin JF, Butte R, Frandon J, Grandjean N |
259 - 267 |
The effect of substrate temperature on filtered vacuum are deposited zinc oxide and tin oxide thin films Cetinorgu E, Goldsmith S, Boxman RL |
268 - 271 |
Effect of growth conditions on the GaN thin film by sputtering deposition Zhang CG, Bian LF, Chen WD, Hsu CC |
272 - 276 |
Novel synthesis method of ZnO nanorods by ion complex transformed PVA-assisted nucleation Sang WB, Fang YY, Fan JR, He Y, Min JH, Qian YB |
277 - 281 |
Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride Cheng SF, Woo RL, Noori AM, Malouf G, Goorsky MS, Hicks RF |
282 - 287 |
Blue and green emission using In(Ga)N/GaN quantum wells with InN well layers grown by metalorganic chemical vapor deposition Kong BH, Kim DC, Cho HK, Lee KH, Kim JW, Kim BJ |
288 - 294 |
Epitaxial growth of biferroic YMnO3(0001) on platinum electrodes Marti X, Sanchez F, Hrabovsky D, Fontcuberta J, Laukhin V, Skumryev V, Garcia-Cuenca MV, Ferrater C, Varela M, Luders U, Bobo JF, Estrade S, Arbiol J, Peiro F |
295 - 298 |
Magnetron sputtering growth and characterization of single crystal ZnO thin films on Si using GaN interlayer Kim IS, Kim TH, Kim SS, Lee CR, Lee BT |
299 - 302 |
Epitaxy of thin films of the Heusler compound Co2Cr0.6Fe0.4Al Conca A, Jourdan M, Herbort C, Adrian H |
303 - 308 |
Modeling analysis of the MOCVD growth of ZnO film Liu SM, Gu SL, Zhu SM, Ye JD, Liu W, Zhou X, Zhang R, Shi Y, Zheng YD |
309 - 315 |
Large-grained polycrystalline silicon films on glass by argon-assisted ECRCVD epitaxial thickening of seed layers Ekanayake G, Quinn T, Reehal HS, Rau B, Gall S |
316 - 321 |
Microstructure characterization of location-controlled Si-islands crystallized by excimer laser in the mu-Czochralski (grain filter) process Ishihara R, Danciu D, Tichelaar F, He M, Hiroshima Y, Inoue S, Shimoda T, Metselaar JW, Beenakker CIM |
322 - 329 |
Interlaced spiral growth and step splitting on a steroid crystal Stoica C, van Enckevort WJP, Meekes H, Vlieg E |
330 - 335 |
Chemical solution. deposition and transport properties of Ag-doped manganite films Zhu XB, Sun YP, Lei HC, Li XG, Song WH |
336 - 343 |
Single crystal growth and characterization of holmium tartrate trihydrate Want B, Farooq A, Kotru PN |
344 - 348 |
Synthesis and terahertz-wave generation of mixed crystals composed of 1-methyl-4-{2-[4-(dimethylamino)phenyl]ethenyl}pyridinium p-toluenesulfonate and p-chlorobenzenesulfonate Matsukawa T, Mineno Y, Odani T, Okada S, Taniuchi T, Nakanishi H |
349 - 357 |
Room-temperature growth of single-crystalline TiO2 thin films on nanometer-scaled substrates by dc magnetron sputtering deposition Izumi T, Teraji T, Ito T |
358 - 364 |
Modeling studies of the chemical vapor deposition of boron films from B2H6 Lamborn DR, Snyder DW, Xi XX, Redwing JM |
365 - 368 |
Solvent mediated assembly of nickel crystallites: From chains to isolated spheres Ni XM, Zhang YF, Song JM, Zheng HG |
369 - 373 |
Microstructure-dependent luminescent properties of thin-film ZnGa2O4 : Mn2+ phosphors Park JH, Lee SH, Kim JS, Park HW, Choi JC, Park HL, Kim GC, Yoo JH |
374 - 385 |
Onset of crystalline order in oxygen clusters Calvo F, Torchet G |
386 - 392 |
Formation of CuS nanotube arrays from CuCl Nanorods through a gas-solid reaction route Wang Q, Li JX, Li GD, Cao XJ, Wang KJ, Chen JS |
393 - 398 |
Condensation, crystallization and coalescence of amorphous Al2O3 nanoparticles Pan CN, Shen PY, Chen SY |
399 - 403 |
Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si(001) substrates Schulze F, Kisel O, Dadgar A, Krtschil A, Blasing J, Kunze M, Daumiller I, Hempel T, Diez A, Clos R, Christen J, Krost A |
404 - 412 |
A modified HEM system for optical crystal growth with high melting temperature Xiong HB, Ma Y, Zheng LL |
413 - 417 |
Crystal growth and characterization of CaxBa1-xNb2O6 (CBN) in the composition range of 0.22 <= x(Ca) <= 0.35 Burianek M, Joschko B, Kerkamm I, Schoenbeck T, Klimm D, Muehlberg M |
418 - 428 |
Real-time study of thin and bulk eutectic growth in succinonitrile-(D)camphor alloys Akamatsu S, Bottin-Rousseau S, Perrut M, Faivre G, Witusiewicz VT, Sturz L |
429 - 435 |
Micro structure-controlled effects on temperature reduction of alpha-Al2O3 crystallite formation Yang RJ, Yen FS, Lin SM, Chen CC |
436 - 436 |
Comment on: "Magnetic field influence on the molecular alignment of vanadyl phthalocyanine thin films" by V. Kolotovska et al. [J. Crystal Growth 291 (2006) 166] Sassella A, Campione M |
437 - 437 |
Response on the comment by A. Sassella and M. Campione (08.08.2006) on the paper "Magnetic field influence on the molecular alignment of vanadyl phthalocyanine thin films" V. Kolotovska et al., J. Crystal Growth, 291, 166 (2006) Kolotovska V, Paez BA |