Applied Surface Science

Applied Surface Science, Vol.231-2 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (196 articles)

1 - 2	Special Issue - Secondary Ion Mass Spectrometry SIMS XIV - Proceedings of the Fourteenth International Conference on Secondary Ion Mass Spectrometry and Related Topics - San Diego, California, USA, September 14-19, 2003 - Preface Hunter J, Schueler BW, Stevie FA
3 - 12	Challenges in localized high precision isotope analysis by SIMS Slodzian G
13 - 21	Collisions of organic ions at surfaces Cooks RG, Jo SC, Green J
22 - 28	Sputtering simulations of organic overlayers on metal substrates by monoatomic and clusters projectiles Postawa Z
29 - 38	Molecular dynamics simulation of silicon sputtering: sensitivity to the choice of potential Thijsse BJ, Klaver TPC, Haddeman EFC
39 - 43	A comparison of molecular dynamic simulations and experimental observations: the sputtering of gold {100} by 20 keV argon McQuaw CM, Smiley EJ, Garrison BJ, Winograd N
44 - 47	Molecular dynamics simulations to explore the role of mass matching in the keV bombardment of organic films with polyatomic projectiles Harper S, Krantzman KD
48 - 53	Sputtering of a polycyclic hydrocarbon molecule: TOF-SIMS experiments and molecular dynamic simulations Solomko V, Delcorte A, Garrison BJ, Bertrand P
54 - 58	Cluster secondary ion mass spectrometry: an insight into super-efficient" collision cascades Rickman RD, Verkhoturov SV, Schweikert EA
59 - 63	Energetic cluster induced desorption from a graphite surface Webb R
64 - 67	Sputtering of ag under C60(+) and Ga+ projectile bombardment Sun S, Szakal C, Smiley EJ, Postawa Z, Wucher A, Garrison BJ, Winograd N
68 - 71	Molecular depth profiling in ice matrices Using C-60 projectiles Wucher A, Sun S, Szakal C, Winograd N
72 - 77	Emission of ionic water clusters from water ice films bombarded by energetic projectiles Wojciechowski IA, Kutliev U, Sun SX, Szakal C, Winograd N, Garrison BJ
78 - 81	Non-additive effects in secondary-ion emission from V, Nb and Ta under gold-cluster bombardment Morozov SN, Rasulev UK
82 - 85	Detection of the diatomic dications SiH2+ and AM(2+) Franzreb K, Sobers RC, Lorincik J, Williams P
86 - 89	Secondary ion emission from polycrystalline Al under Cs+ irradiation van der Heide PAW
90 - 93	Factors affecting the retention of Cs+ primary ions in Si van der Heide PAW, Lupu C, Kutana A, Rabalais JW
94 - 96	Positive ionization probabilities of sputtered Ag and Ta clusters Ferleger VK
97 - 100	Secondary ion emission and work function measurements over the transient region from n and p type Si under Cs+ irradiation van der Heide PAW
101 - 105	On the trends in kinetic energies of secondary ions produced by polyatomic ion bombardment Veryovkin IV, Belykh SF, Adriaens A, Zinovev AV, Adams F
106 - 112	Characterization of surface structure by cluster coincidental ion mass spectrometry Rickman RD, Verkhoturov SV, Balderas S, Bestaoui N, Clearfield A, Schweikert EA
113 - 116	Nanodomain analysis via coincidence ion mass spectrometry Verkhoturov SV, Rickman RD, Balderas S, Schweikert EA
117 - 121	Detection of sputtered molecular doubly charged anions: a comparison of secondary-ion mass spectrometry (SIMS) and accelerator mass spectrometry (AMS) Gnaser H, Golser R, Kutschera W, Priller A, Steier P, Vockenhuber C
122 - 126	Emission processes of molecule-metal cluster ions from self-assembled monolayers of octanethiols on gold and silver Arezki B, Delcorte A, Bertrand P
127 - 130	Positive secondary ion yield enhancement of metal elements using trichlorotrifluoroethane and tetrachloroethene backfilling Chi PH, Gillen G
131 - 135	Desorption/ionization of molecular nanoclusters: SIMS versus MALDI Delcorte A, Hermans S, Devillers M, Lourette N, Aubriet F, Muller JF, Bertrand P
136 - 140	Imaging by atomic force microscopy of the electrical properties difference of the facets of oxygen-ion-induced ripple topography in silicon Gautier B, Fares B, Prudon G, Dupuy JC
141 - 145	Laboratory teaching of SIMS to university undergraduates Chater RJ, McPhail DS
146 - 152	C-60 cluster ion bombardment of organic surfaces Weibel DE, Lockyer N, Vickerman JC
153 - 158	Cluster primary ion bombardment of organic materials Kollmer F
159 - 163	ToF-SIMS imaging with cluster ion beams Xu J, Ostrowski S, Szakal C, Ewing AG, Winograd N
164 - 168	Investigation of secondary cluster ion emission from self-assembled monolayers of alkanethiols on gold with ToF-SIMS Schroder M, Sohn S, Arlinghaus HF
169 - 173	Impact energy dependence of SF5+ ion beam damage of poly(methyl methacrylate) studied by time-of-flight secondary ion mass spectrometry Wagner MS, Gillen G
174 - 178	Dynamic SIMS utilizing SF5+ polyatomic primary ion beams for drug delivery applications Mahoney CM, Roberson S, Gillen G
179 - 182	Depth profiling studies of multilayer films with a C-60(+) ion source Sostarecz AG, Sun S, Szakal C, Wucher A, Winograd N
183 - 185	C-60 molecular depth profiling of a model polymer Szakal C, Sun S, Wucher A, Winograd N
186 - 190	Automated analysis of organic particles using cluster SIMS Gillen G, Zeissler C, Mahoney C, Lindstrom A, Fletcher R, Chi P, Verkouteren J, Bright D, Lareau RT, Boldman M
191 - 195	Sputtering of indium using polyatomic projectiles Samartsev AV, Wucher A
196 - 200	Polyatomic primary ion bombardment of organic materials: experiences in routine analysis Hagenhoff B, Pfitzer K, Tallarek E, Kock R, Kersting R
201 - 206	Evaluation of a gold LMIG for detecting small molecules in a polymer matrix by ToF-SIMS Bryan SR, Belu AM, Hoshi T, Oiwa R
207 - 216	Re-discovering surface mass spectrometry: chemical mapping from micro to macro Lloyd KG, O'Keefe DP
217 - 223	Enhancing and automating TOF-SIMS data interpretation using principal component analysis Pachuta SJ
224 - 229	Organic molecule characterization - G-SIMS Gilmore IS, Seah MP
230 - 234	Multivariate statistical analysis of time-of-flight secondary ion mass spectrometry images using AXSIA Ohlhausen JAT, Keenan MR, Kotula PG, Peebles DE
235 - 239	Principal component analysis of TOF-SIMS spectra, images and depth profiles: an industrial perspective Pacholski ML
240 - 244	Optimal scaling of TOF-SIMS spectrum-images prior to multivariate statistical analysis Keenan MR, Kotula PG
245 - 249	Multivariate statistical analysis of time-of-flight secondary ion mass spectrometry images-looking beyond the obvious Smentkowski VS, Ohlhausen JA, Kotula PG, Keenan MR
250 - 255	Interest of silver and gold metallization for molecular SIMS and SIMS imaging Delcorte A, Bertrand P
256 - 260	Organic SIMS: the influence of time on the ion yield enhancement by silver and gold deposition Adriaensen L, Vangaever F, Gijbels R
261 - 264	Influence of primary ion bombardment conditions on the emission of molecular secondary ions Kersting R, Hagenhoff B, Kollmer F, Mollers R, Niehuis E
265 - 268	Optimized conditions for selective gold flotation by ToF-SIMS and ToF-LIMS Chryssoulis SL, Dimov SS
269 - 273	Additive quantification on polymer thin films by ToF-SIMS: aging sample effects Poleunis C, Medard N, Bertrand P
274 - 277	Characterization of poly(p-phenylene vinylene)/methanofullerene blends of polymer solar cells by time-of-flight secondary ion mass spectrometry Bulle-Lieuwma CWT, van Duren JKJ, Yang X, Loos J, Sieval AB, Hummelen JC, Janssen RAJ
278 - 282	TOF-SIMS study of modified polymer surfaces Lee Y, Han S, Kwon MH
283 - 288	Determination of oligomeric chain length distributions at surfaces using ToF-SIMS: segregation effects and polymer properties Gardella JA, Mahoney CM
289 - 295	ToF-SIMS molecular characterization and nano-SIMS imaging of submicron domain formation at the surface of PS/PMMA blend and copolymer thin films Kailas L, Audinot JN, Migeon HN, Bertrand P
296 - 301	Molecular weight evaluation of poly-dimethylsiloxane on solid surfaces using silver deposition/TOF-SIMS Inoue M, Murase A
302 - 308	Effect of deep UV (172 nm) irradiation on PET: ToF/SIMS analysis Zhu ZM, Kelley MJ
309 - 313	Additive behavior in ultrathin polymer films investigated by ToF-SIMS Medard N, Bertrand P
314 - 317	ToF-SIMS investigation of functional mixed aromatic thiol monolayers on gold Auditore A, Tuccitto N, Quici S, Marzanni G, Puntoriero F, Campagna S, Licciardello A
318 - 322	Static SIMS study of the behavior of K atoms on -CH3, -CO2H and-CO2CH3 terminated self-assembled monolayers Zhu Z, Haynie BC, Winograd N
323 - 327	Aldehydes react with scribed silicon to form alkyl monolayers -Characterization by ToF-SIMS suggests an even-odd effect Lua YY, Fillmore WJJ, Linford MR
328 - 331	Layer-by-layer characterization of ultrathin films with secondary ion mass spectrometry Li Z, Rickman RD, Verkhoturov SV, Schweikert EA
332 - 335	Investigation of fomblin Z-Dol end-groups on the magnetic recording disks by ToF-SIMS Ishikawa M, Osawa Y, Ishiwata O
336 - 341	TOF-SIMS characterization of lubricants used in magnetic recording media Zhang BC, Liu HK, Chang S
342 - 347	ToF-SIMS analysis of anti-fretting films generated on the surface of ball bearings containing dithiocarbamate and dithiophosphate grease additives Duque RG, Wang ZY, Duell D, Fowler DE
348 - 352	A comparative study of carbocyanine dyes measured with TOF-SIMS and other mass spectrometric techniques Adriaensen L, Vangaever F, Gijbels R
353 - 356	Depth profile analysis of chemically amplified resist by using TOF-SIMS with gradient shaving preparations Man N, Okumura H, Oizumi H, Nagai N, Seki H, Nishiyama I
357 - 361	Ga+ TOF-SIMS lineshape analysis for resolution enhancement of MALDI MS spectra of a peptide mixture Malyarenko DI, Chen H, Wilkerson AL, Tracy ER, Cooke WE, Manos DM, Sasinowski M, Semmes OJ
362 - 365	A ToF-SIMS study of linseed oil bonded to mercapto silane treated aluminium Bexell U, Olsson M, Sundell PE, Johansson M, Carlsson P, Hellsing A
366 - 376	Analysis of adsorbed proteins by static time-of-flight secondary ion mass spectrometry Wagner MS, Castner DG
377 - 384	Progress in cellular analysis using ToF-SIMS Lockyer NP, Vickerman JC
385 - 391	Quantitative TOF-SIMS imaging of DNA microarrays produced by bubble jet printing technique and the role of TOF-SIMS in life science industry Hashimoto H, Nakamura K, Takase H, Okamoto T, Yamamoto N
392 - 396	Development of PNA microarrays for gene diagnostics with TOF-SIMS Arlinghaus HF, Schroder M, Feldner JC, Brandt O, Hoheisel JD, Lipinsky D
397 - 401	ToF-SIMS characterization of hybridization onto self-assembled single-stranded DNA monolayers Samuel NT, Castner DG
402 - 405	ToF-SIMS surface and interface characterization of the immobilized camel antibody (cAb) onto SAMs-COOH/Au substrates Azioune A, Pireaux J, Houssiau L
406 - 410	Interpretation of static time-of-flight ion mass spectral images of adsorbed protein films on topographically complex surfaces Rangarajan S, Tyler BJ
411 - 415	TOF-SIMS imaging of protein adsorption on dialysis membrane Aoyagi S, Hayama M, Hasegawa U, Sakai K, Hoshi T, Kudo M
416 - 419	ToF-SIMS applied to probe bixin in Bixa orellana seeds Houssiau L, Felicissimo M, Bittencourt C, Pireaux JJ
420 - 423	ToF-SIMS studies as a tool to discriminate between spores and vegetative cells of bacteria Thompson CE, Jungnickel H, Lockyer NP, Stephens GM, Vickerman JC
424 - 427	Molecule-specific imaging analysis of carcinogens in breast cancer cells using time-of-flight secondary ion mass spectrometry Quong JN, Knize MG, Kulp KS, Wu KJ
428 - 431	Quantitative imaging of atomic and molecular species in cancer cultures with TOF-SIMS and Laser-SNMS Fartmann M, Kriegeskotte C, Dambach S, Wittig A, Sauerwein W, Arlinghaus HF
432 - 436	Detection of protein immobilization on biosensor surfaces by TOF-SIMS Aoyagi S, Oiw Y, Kudo M
437 - 441	Application of TOF-SIMS to monitor coating processes on biological and organic surfaces Chatterjee R
442 - 446	Simultaneous determination of drug surface concentration and polymer degradation kinetics in biodegradable polymer/drug membranes: a model drug delivery system Lee JW, Gardella JA
447 - 451	Rapid identification of phthalates in blood bags and food packaging using ToF-SIMS Chen CY, Ghule AV, Chen WY, Wang CC, Chiang YS, Ling YC
452 - 456	Imaging ToF-SIMS and synchrotron-based FT-IR micro spectroscopic studies of prostate cancer cell lines Gazi E, Lockyer NP, Vickerman JC, Gardner P, Dwyer J, Hart CA, Brown MD, Clarke NW, Miyan J
457 - 461	Subcellular SIMS imaging of gadolinium isotopes in human glioblastoma cells treated with a gadolinium containing MRI agent Smith DR, Lorey DR, Chandra S
462 - 466	Subcellular SIMS imaging of isotopically labeled amino acids in cryogenically prepared cells Chandra S
467 - 469	3D subcellular SIMS imaging in cryogenically prepared single cells Chandra S
470 - 474	TOF-SIMS investigation of metallic material surface after culturing cells Aoyagi S, Hiromoto S, Hanawa T, Kudo M
475 - 478	Subcellular localization of aluminum and indium in the rat kidney Galle P, Levi-Setti R, Lamperti A, Bourahla K, Escaig F
479 - 484	Ion microprobe imaging of Ca-44-labeled mammalian chromosomes Levi-Setti R, Gavrilov KL, Strissel PL, Strick R
485 - 489	Specific Mg2+ binding at human and Indian muntjac chromosomal Giemsa bands Strissel PL, Strick R, Gavrilov KL, Levi-Setti R
490 - 496	Imaging of arsenic traces in human hair by nano-SIMS 50 Audinot JN, Schneider S, Yegles M, Hallegot P, Wennig R, Migeon HN
497 - 501	Accumulation of chromium in root tissues of Eichhornia crassipes (Mart.) Solms. in Cachoeira river - Brazil Mangabeira PAO, Labejof L, Lamperti A, de Almeida AAF, Oliveira AH, Escaig F, Severo MIG, Silva DD, Saloes M, Mielke MS, Lucena ER, Martins MC, Santana KB, Gavrilov KL, Galle P, Levi-Setti R
502 - 505	Influence of hydrocarbons on element detection in ion images by SIMS microscopy Takaya K, Okabe M, Sawataishi M, Yoshida T
506 - 509	Laser-SNMS analysis of apatite formation in vitro Dambach S, Fartmann M, Kriegeskotte C, Bruning C, Wiesmann HP, Lipinsky D, Arlinghaus F
510 - 514	Room temperature corrosion of museum glass: an investigation using low-energy SIMS Fearn S, McPhail DS, Oakley V
515 - 519	TOF-SIMS measurement for the complex particulate matter in urban air environment Tomiyasu B, Suzuki K, Gotoh T, Owari M, Nihei Y
520 - 523	TOF-SIMS analysis of sea salt particles: imaging and depth profiling in the discovery of an unrecognized mechanism for pH buffering Gaspar DJ, Laskin A, Wang W, Hunt SW, Finlayson-Pitts BJ
524 - 527	ToF-SIMS analysis of atmospherically relevant sulphuric acid hydrate films and reactions thereof Fletcher JS, Vickerman JC
528 - 532	A comparative study on detection of organic surface modifiers on mineral grains by TOF-SIMS, VUVSALI TOF-SIMS and VUVSALI with laser desorption Dimov SS, Chryssoulis SL
533 - 537	ToF-SIMS as an alternative tool for the qualitative and quantitative analysis of polar herbicides Botreau M, Guignard U, Hoffmann L, Migeon HN
538 - 542	Application of a cryo-stage in the TOF-SIMS analysis of atmospheric aerosol surfaces Nair AP, Tyler BJ, Peterson RE
543 - 551	Challenges for the characterization and integration of high-kappa dielectrics Wallace RM
552 - 555	The influence of oxygen on the Hf signal intensity in the characterization of HfO2/Si stacks Huyghebaert C, Conard T, Vandervorst W
556 - 560	Analysis of high-k hfO(2) and HfSiO4 dielectric films Nieveen W, Schueler BW, Goodman G, Schnabel P, Moskito J, Mowat I, Chao G
561 - 564	Quantification of nitrogen profiles in HfSiON films for gate dielectrics Yamamoto T, Miyamoto T, Karen A
565 - 568	Sputter rate variations in silicon under high-k dielectric films Bennett J, Beebe M, Sparks C, Gondran C, Vandervorst W
569 - 573	On the reliability of SIMS depth profiles through HfO2-stacks Vandervorst W, Bennett J, Huyghebaert C, Conard T, Gondran C, De Witte H
574 - 580	ToF-SIMS profiling of HfO2/Si stacks: influence of sputtering condition of profile shape Conard T, Huyghebaert C, Vandervorst W
581 - 584	Nitrogen analysis in high-k stack layers: a challenge Conard T, Vandervorst W, De Witte H, Van Elshocht S
585 - 589	ToF-SIMS depth profiling of Hf and Al composition variations in ultrathin mixed HfO2/Al2O3 oxides Houssiau L, Vitchev RG, Conard T, Vandervorst W, Bender H
590 - 593	SIMS study on N diffusion in hafnium oxynitride Gui D, Kang JF, Yu HY, Lim HF
594 - 597	Backside-SIMS profiling of dopants in thin Hf silicate film Hongo C, Takenaka M, Kamimuta Y, Suzuki M, Koyama M
598 - 602	High resolution depth profiling of thin STO in high-k oxide material Ehrke U, Sears A, Alff L, Reisinger D
603 - 608	Depth profiling of ZrO2/SiO2/Si stacks - a TOF-SIMS and computer simulation study Ignatova VA, Conard T, Moller W, Vandervorst W, Gijbels R
609 - 613	Characterization of high-k dielectrics with ToF-SIMS Ferrari S
614 - 617	Depth profiles of boron and nitrogen in SiON films by backside SIMS Sameshima J, Maeda R, Yamada K, Karen A, Yamada S
618 - 631	Errors in near-surface and interfacial profiling of boron and arsenic Vandervorst W, Janssens T, Brijs B, Conard T, Huyghebaert C, Fruhauf J, Bergmaier A, Dollinger G, Buyuklimanli T, VandenBerg JA, Kimura K
632 - 635	Arsenic shallow depth profiling: accurate quantification inSiO(2)/Si stack Barozzi M, Giubertoni D, Anderle M, Bersani A
636 - 639	Improved near surface characterization of shallow arsenic distribution by SIMS depth profiling Buyuklimanli TH, Marino JW, Novak SW
640 - 644	Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS Merkulov A, de Chambost E, Schuhmacher M, Peres P
645 - 648	Ultra-shallow arsenic implant depth profiling using low-energy nitrogen beams Fearn S, Chater R, McPhail D
649 - 652	Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS: round-robin test Toujou F, Yoshikawa S, Homma Y, Takano A, Takenaka H, Tomita M, Li Z, Hasegawa T, Sasakawa K, Schuhmacher M, Merkulov A, Kim HK, Moon DW, Hong T, Won JY
653 - 657	Sub-keV secondary ion mass spectrometry depth profiling: comparison of sample rotation and oxygen flooding Liu R, Wee ATS
658 - 662	a-Si capping SIMS for shallow dopant profiles Miwa S
663 - 667	Site-specific SIMS backside analysis Gu C, Garcia R, Pivovarov A, Stevie F, Griffis D
668 - 672	Backside and frontside depth profiling of B delta doping, at low energy, using new and previous magnetic SIMS instruments Laugier F, Hartmann JM, Moriceau H, Holliger P, Truche R, Dupuy JC
673 - 677	Accurate depth profiling for ultra-shallow implants using backside-SIMS Hongo C, Tomita M, Takenaka M
678 - 683	Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon Fares B, Gautier B, Baboux N, Prudon G, Holliger P, Dupuy JC
684 - 687	O-2(+) versus Cs+ for high depth resolution depth profiling of III-V nitride-based semiconductor devices Kachan M, Hunter J, Kouzminov D, Pivovarov A, Gu J, Stevie F, Griffis D
688 - 692	Effects of crystalline regrowth on dopant profiles in prearnorphized silicon Hopstaken MJP, Tamminga Y, Verheijen MA, Duffy R, Venezia VC, Heringa A
693 - 697	Energy and angular dependence of the sputter yield and ionization yield of Ge bombarded by O-2(+) Huyghebaert C, Conard T, Vandervorst W
698 - 703	SIMS depth profiling of SiGe : C structures in test pattern areas using low energy cesium with a Cameca IMS Wf Juhel M, Laugier F
704 - 707	Matrix effects in SIMS depth profiles of SiGe relaxed buffer layers Sanchez-Almazan F, Napolitani E, Carnera A, Drigo AV, Isella G, von Kanel H, Berti M
708 - 712	Impact of the Ge concentration on the Ge-ionisation probability and the matrix sputter yield for a, SiGe matrix under oxygen irradiation Huyghebaert C, Conard T, Brijs B, Vandervorst W
713 - 715	Use of SIMS in SiGe process control Maul JL, Chou PF, Lu YH
716 - 719	Quantifying residual and surface carbon using polyencapsulation SIMS Beebe M, Bennett J, Barnett J, Berlin A, Yoshinaka T
720 - 724	Quantification issues of trace metal contaminants on silicon wafers by means of TOF-SIMS, ICP-MS, and TXRF Rostam-Khani P, Hopstaken MJP, Vullings P, Noij G, O'Halloran O, Claassen W
725 - 728	Study on change in SIMS intensities near the interface between silicon-nitride film and silicon substrate Hasegawa T, Date T, Karen A, Masuda A
729 - 733	Quantitative measurement of O/Si ratios in oxygen- sputtered silicon using O-18 implant standards Sobers RC, Franzreb K, Williams P
734 - 737	Application of TXRF for ion implanter dose matching experiments Frost MR, French M, Harris W
738 - 742	Secondary ion mass spectrometry characterization of indium-implanted silicon wafers Blackmer-Krasinski C, Morinville WR
743 - 748	Optimization of SIMS analyses performed in the MCsx(+) mode by using an in situ deposition of Cs Wirtz T, Migeon HN
749 - 753	Cesium/xenon dual beam depth profiling with TOF-SIMS: measurement and modeling of M+, MCs+, and (MCS2)-C-2 (+) yields Brison J, Conard T, Vandervorst W, Houssiau L
754 - 757	Cation Mass Spectrometer (CMS): recent developments for quantitative analyses of positive and negative secondary ions Philipp P, Wirtz T, Migeon HN, Scherrer H
758 - 761	Hydrogen redistribution in CVD SiO2 during post-oxidation annealing investigated by SIMS Kawashima Y, Kawano H, Terashima K, Hamada K, Aoyagi S, Kudo M
762 - 767	Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers Ronsheim PA, Loesing R, Madan A
768 - 771	Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements Barozzi M, Giubertoni D, Anderle A, Bersani A
772 - 775	Front- and back-end process characterization by SIMS to achieve electrically matched devices Budri T, Kouzminov D
776 - 780	Effects of contamination on selective epitaxial growth MacDonald BJ, Paton E, Adem E, En B
781 - 785	Utilization of electron impact ionization of gaseous and sputtered species in the secondary ion acceleration region of a magnetic sector SIMS instrument Pivovarov A, Gu C, Stevie F, Griffis D
786 - 790	Improved charge neutralization method for depth profiling of bulk insulators using O-2(+) primary beam on a magnetic sector SIMS instrument Pivovarov AL, Stevie FA, Griffis DP
791 - 795	SIMS study of Cu trapping and migration in low-k dielectric films Li YP, Hunter J, Tate TJ
796 - 799	Optimization of SIMS analysis conditions for Na, S, P and N in Cu films Li YP
800 - 803	Deconvolution analysis of dopant depth profile of Si at AlGaAs/GaAs interface using Al composition profile as reference Kawashima Y, Ide T, Aoyagi S, Kudo M
804 - 807	Copper-indium-gallium-diselenide/molybdenum layers analyzed by corrected SIMS depth profiles Bilger G, Grabitz PO, Strohm A
808 - 812	Characterization of light element impurities in gallium-nitride-phosphide by SIMS analysis Reedy RC, Geisz JF, Ptak AJ, Keyes BM, Metzger WK
813 - 816	Characterization of silicon nanocrystals embedded in thin oxide layers by TOF-SIMS Perego M, Ferrari S, Fanciulli M, Ben Assayag G, Bonafos C, Carrada M, Claverie A
817 - 820	Cluster ion emission from nitrogen-doped GaAs and optimization of SIMS conditions for nitrogen analysis Guryanov GM
821 - 825	Ti diffusion in chalcogenides: a ToF-SIMS depth profile characterization approach Alberici SG, Zonca R, Pashmakov B
826 - 828	Zinc determination in A(3)B(5) semiconductors Yu KD, Kovarsky AP
829 - 833	The role of dynamic SIMS in process development for high-temperature superconducting wire Ericson RE
834 - 839	Oxygen isotopic tracer measurements in ceramics and ceramic composites with a fine focus gallium primary ion gun Chater RJ, McPhail DS
840 - 844	TOF-SIMS study of pyridine intercalated nanorods of bismuth molybdate Ghule AV, Chen CY, Mei FD, Ling YC
845 - 849	Reaction monitoring of polyaniline film formation on carbon nanotubes with TOF-SIMS Chen WY, Chen CY, Hsu KY, Wang CC, Ling YC
850 - 853	ToF-SIMS depth profiling of alumina scales formed on a FeCrAl high-temperature alloy Engkvist J, Bexell U, Grehk TM, Olsson M
854 - 858	Effect of low level contamination on TiAl alloys studied by SIMS Teodoro OMND, Barbosa J, Naia MD, Moutinho AMC
859 - 863	SIMS analyses on Co : ns-C thin films Lamperti A, Garvilov KL, Levi-Setti R, Bongiorno G, Blomqvist M, Ossi PM, Bottani CE
864 - 867	Evaluation of oxygen in oxide materials by SIMS using O-18(2) gas Takeda S
868 - 873	Characterization of nickel phosphorus surface by ToF-SIMS Zhang BC, Barth G, Liu HK, Chang S
874 - 877	QSA influences on isotopic ratio measurements Slodzian G, Hillion F, Stadermann FJ, Zinner E
878 - 882	Achieving high reproducibility isotope ratios with the Cameca IMS 1270 in the multicollection mode Schuhmacher M, Fernandes F, de Chambost E
883 - 887	Multi-correlation analyses of TOF-SIMS spectra for mineralogical studies Engrand C, Lespagnol J, Martin P, Thirkell L, Thomas R
888 - 892	Cryogenic SIMS and its applications in the earth sciences Wiedenbeck M, Rhede D, Lieckefett R, Witzki H
893 - 898	FIB-SIMS analysis of micro-particle impacts on spacecraft materials returned from low-earth orbit Kettle S, Chater RJ, Graham GA, McPhail DS, Kearsley AT
899 - 902	SIMS analyses of Mg, Cr, and Ni isotopes in primitive meteorites and short-lived radionuclides in the early solar system Guan Y, Huss GR, Leshin LA
903 - 906	SIMS study of self-consisted fractionation of iron and titanium isotopes in ilmenites Didenko PI, Efremov AA
907 - 911	Silicon isotopic zoning in silicon crystals caused by the isotopic fractionation at the crystal-melt interface Morishita Y, Satoh H
912 - 916	Peak fitting to resolve CN- isotope ratios in biological and environmental samples using TOF-SIMS Cliff JB, Gaspar DJ, Bottomley PJ, Myrold DD
917 - 920	Using SIMS to diagnose color changes in heat treated gem sapphires Novak SW, Magee CW, Moses T, Wang WY
921 - 925	SIMION modeling of ion optical effects in Cameca ion microanalyzers: simulation of ion transmission losses Lorincik J, Franzreb K, Williams P
926 - 929	High-resolution primary ion beam probe for SIMS Guharay SK, Douglass S, Orloff J
930 - 935	Evaluation of the nano-beam SIMS apparatus Nojima M, Toi M, Maekawa A, Tomiyasu B, Sakamoto T, Owari M, Nihei Y
936 - 939	The development of C-60 and gold cluster ion guns for static SIMS analysis Hill R, Blenkinsopp PWM
940 - 944	Development of a column delivering a collimated stream of Cs-0 for SIMS purposes Wirtz T, Migeon HN
945 - 948	Development of compact cluster ion sources using metal cluster complexes - Ionization properties of metal cluster complexes Mizota T, Nonaka H, Fujimoto T, Kurokawa A, Ichimura S
949 - 953	Latest developments for the CAMECA ULE-SIMS instruments: IMS Wf and SC-Ultra de Chambost E, Merkulov A, Peres P, Rasser B, Schuhmacher M
954 - 958	Accurate on-line depth calibration with a laser interferometer during SIMS profiling on the Cameca IMS WF instrument Merkulov A, Merkulova O, de Chambost E, Schuhmacher M
959 - 961	Sample holder implement for very small samples on SC-ultra SIMS instrument Barozzi M, Giubertoni D, Sbetti M, Anderle M, Bersani M
962 - 966	A new horizon in secondary neutral mass spectrometry: post-ionization using a VUV free electron laser Veryovkin IV, Calaway WF, Moore JF, Pellin MJ, Lewellen JW, Li YL, Milton SV, King BV, Petravic M
967 - 971	Rapid characterisation of surface modifications and treatments using a benchtop SIMS instrument McPhail DS, Sokhan M, Rees EE, Cliff B, Eccles AJ, Chater RJ
972 - 975	High mass resolution SIMS Maharrey S, Bastasz R, Behrens R, Highley A, Hoffer S, Kruppa G, Whaley J
976 - 980	Development of an instrument for simultaneous detection of positive and negative scanning ion images Seki S, Tamura H, Kanoh T, Satoh T