191 - 199 |
Effects of heat annealing on the film characteristics and gas sensing properties of substituted and un-substituted copper phthalocyanine films Lee YL, Tsai WC, Chang CH, Yang YM |
200 - 206 |
On the growth mechanism of UV laser deposited a-C : H from CH2I2 at room temperature Lindstam M, Boman M, Piglmayer K |
207 - 213 |
Precipitate-free epitaxy of YBa2Cu3O7-delta by atomic control of step arrays on vicinal SrTiO3 (100) substrates Nie JC, Koyanagi M, Shoji A |
214 - 219 |
Electroreflectance study of macroporous silicon surfaces Holiney RY, Matveeva LA, Venger EF, Livinenko AO, Karachevtseva LA |
220 - 224 |
Atmospheric pressure chemical vapour deposition of selenium films by KrF laser photolysis of dimethyl selenium Pola J, Bastl Z, Subrt J, Ouchi A |
225 - 234 |
Porous silicon as a potentiometric transducer for ion detection: effect of the porosity on the sensor response Zairi S, Martelet C, Jaffrezic-Renault N, Lamartine R, M'gaieth R, Maaref H, Gamoudi M, Guillaud G |
235 - 244 |
Moderator gratings for the generation of epithermal positive muons Prokscha T, Morenzoni E, David C, Hofer A, Gluckler H, Scandella L |
245 - 252 |
Preparation of indium tin oxide films and doped tin oxide films by an ultrasonic spray CVD process Zhou ZB, Cui RQ, Pang QJ, Wang YD, Meng FY, Sun TT, Ding ZM, Yu XB |
253 - 259 |
High energy photoemission investigations of SiO2/SiC samples Virojanadara C, Glans PA, Johansson LI, Eickhoff T, Drube W |
260 - 264 |
Study on the structure and properties of ZrO2 buffer layers on stainless steel by XRD, IR and AES Yu Y, Wang XP, Cao YZ, Hu XF |
265 - 275 |
On the growth of Fe2As grains at the interface of the Fe/AlxGa1-xAs (x=0.25) system Monteverde F, Michel A, Eymery JP, Desoyer JC |
276 - 284 |
Polypyrrole layers for steel protection Herrasti P, Ocon P |
285 - 294 |
Structural characterisation of ZrB2/oxides nanocomposite films synthesised in flowing Ar-BCl3 post-discharges Pierson JF, Belmonte T, Michel H |
295 - 300 |
The improvement of the SiO2/InAs interface properties with the aid of fast electron irradiation in a direct current sputter deposition system Parm IO, Roh Y, Hong B, Park CS, Yi JS |
301 - 306 |
Simulated nc-AFM images of Si(001) surface with nanotube tip Tagami K, Sasaki N, Tsukada M |
307 - 311 |
FT-IR-ATR study of depth profile of SiO2 ultra-thin films Nagai N, Hashimoto H |
312 - 322 |
Cerium-based conversion layers on aluminum alloys Dabala M, Armelao L, Buchberger A, Calliari I |
323 - 330 |
Photoelectric conversion of a novel photoresponsive dendritic dye in LB monolayer films Li FY, Zhu LY, Huang CH, Jin LP, Zheng J, Shi M, Guo JQ, Wang EJ |
331 - 344 |
Modified surface morphology in surface ablation of cobalt-cemented tungsten carbide with pulsed UV laser radiation Li TJ, Lou QH, Dong JX, Wei YR, Liu JR |
345 - 350 |
Choice of electrolyte for doping profiling in Si by electrochemical C-V technique Basaran E |
351 - 355 |
Vacancies and adatoms complexes on silicon surface Guo HS, Souda R |
356 - 365 |
Ablation of cobalt with pulsed UV laser radiation Li TJ, Lou QH, Dong JX, Wei YR, Liu JR |