검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
On the analogy of the potential barrier of trenched JFET and JBS devices Bellone S, Di Benedetto L, Licciardo GD Solid-State Electronics, 120, 6, 2016 |
| 2 |
A model of the off-behaviour of 4H-SiC power JFETs Bellone S, Di Benedetto L, Licciardo GD Solid-State Electronics, 109, 17, 2015 |
| 3 |
Electrical Characteristics Temperature Dependence of 600V-class Deep Implanted Gate Vertical JFET Mizukami M, Takikawa O, Imai S, Kinoshita K, Hatakeyama T, Domon T, Shinohe T Materials Science Forum, 483, 881, 2005 |
| 4 |
A 600V deep-implanted gate vertical JFET Mizukami M, Takikawa O, Murooka M, Imai S, Kinoshita K, Hatakeyama T, Tsukuda M, Saito W, Omura I, Shinohe T Materials Science Forum, 457-460, 1217, 2004 |
| 5 |
Simulation study of 4H-SiC junction-gated MOSFETs from 300 K to 773 K Lee HS, Koo SM, Zetterling CM, Danielsson E, Domeij M, Ostling M Materials Science Forum, 457-460, 1437, 2004 |
| 6 |
Opportunities and technical strategies for silicon carbide device development Cooper JA Materials Science Forum, 389-3, 15, 2002 |
| 7 |
Masking process for high-energy and high-temperature ion implantation Ohyanagi T, Onose H, Watanabe A, Someya T, Ohno T, Amemiya K, Kobayashi Y Materials Science Forum, 389-3, 867, 2002 |
| 8 |
Application-oriented unipolar switching SiC devices Friedrichs P, Mitlehner H, Schorner R, Dohnke KO, Elpelt R, Stephani D Materials Science Forum, 389-3, 1185, 2002 |
| 9 |
A 600 VSiC trench JFET Gupta RN, Chang HR, Hanna E, Bui C Materials Science Forum, 389-3, 1219, 2002 |
| 10 |
A novel high-voltage normally-off 4H-SiC vertical JFET Zhao JH, Li X, Tone K, Alexandrov P, Pan M, Weiner M Materials Science Forum, 389-3, 1223, 2002 |