검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Toward 4H-SiC MISFETs Devices Based on ONO (SiO2-Si3N4-SiO2) Structures Esteve R, Reshanov SA, Savage S, Bakowski M, Kaplan W, Persson S, Schoner A, Zetterling CM Journal of the Electrochemical Society, 158(5), H496, 2011 |
| 2 |
MOS Capacitors Fabricated on 3C-SiC(111) Layers Grown on 6H-SiC(0001) Lorenzzi J, Esteve R, Jegenyes N, Reshanov SA, Schoner A, Ferro G Journal of the Electrochemical Society, 158(6), H630, 2011 |
| 3 |
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide Emtsev KV, Bostwick A, Horn K, Jobst J, Kellogg GL, Ley L, McChesney JL, Ohta T, Reshanov SA, Rohrl J, Rotenberg E, Schmid AK, Waldmann D, Weber HB, Seyller T Nature Materials, 8(3), 203, 2009 |
| 4 |
Comparison of electrically and optically determined minority carrier lifetimes in 6H-SiC Reshanov SA, Pensl G Materials Science Forum, 483, 417, 2005 |
| 5 |
Midgap defects in 4H-, 6H- and 3C-SiC detected by deep level optical spectroscopy Reshanov SA, Schneider K, Helbig R, Pensl G, Nagasawa H, Schoner A Materials Science Forum, 457-460, 513, 2004 |
| 6 |
Theoretical studies of vanadium impurity in beta-SiC Tairov YM, Reshanov SA, Parfenova II, Yuryeva EI, Ivanovskii AL Materials Science Forum, 389-3, 577, 2002 |
| 7 |
Electrical and optical characterization of SiC Pensl G, Schmid F, Ciobanu F, Laube M, Reshanov SA, Schulze N, Semmelroth K, Nagasawa H, Schoner A, Wagner G Materials Science Forum, 433-4, 365, 2002 |
| 8 |
Majority traps observed in H+- or He+-implanted Al-doped 6H-SiC by admittance and deep level transient spectroscopy Reshanov SA, Klettke O, Pensl G Materials Science Forum, 433-4, 379, 2002 |
| 9 |
Electrical characterization of erbium-implanted 4H-SiC epilayers Reshanov SA, Klettke O, Pensl G, Choyke WJ Materials Science Forum, 433-4, 459, 2002 |
| 10 |
EPR study of electron irradiation-induced defects in semi-insulating SiC : V von Bardeleben HJ, Cantin JL, Reshanov SA, Rastegaev VP Materials Science Forum, 433-4, 507, 2002 |