Solid-State Electronics

Solid-State Electronics, Vol.82 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (22 articles)

1 - 5	AlGaN/GaN metal oxide semiconductor high electron mobility transistor using liquid-phase deposited strontium titanate Wu TY, Hu CC, Sze PW, Huang TJ, Adriyanto F, Wu CL, Wang YH
6 - 10	High sensitivity field emission based sensors using carbon nanotubes on silicon tip for high frequency vibration sensing Abdi Y, Malekan A, Darbari S
11 - 15	Functional nanocrystal-based memories with extraction of nanocrystals properties by charge pumping technique Diaz R, Grisolia J, Pecassou B, Shalchian M, BenAssayag G
16 - 20	Characterization of residual implant damage by generation time technique Jee YJ, Kim CY, Jun CS, Kim TS, Belyaev A, Marinskiy D
21 - 24	Origin of the low-frequency noise in n-channel FinFETs Theodorou CG, Fasarakis N, Hoffman T, Chiarella T, Ghibaudo G, Dimitriadis CA
25 - 28	Improved performance of photovoltaic devices based on poly(3-hexylthiophene) nanofibers and CdSe quantum dots through ligand exchange and annealing treatment Qiao F
29 - 33	La2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode Zadeh DH, Oomine H, Suzuki Y, Kakushima K, Ahmet P, Nohira H, Kataoka Y, Nishiyama A, Sugii N, Tsutsui K, Natori K, Hattori T, Iwai H
34 - 37	Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device Park YH, Shin SH, Song JD, Chang J, Han SH, Choi HJ, Koo HC
38 - 40	A charge-based capacitance model for AlGaAs/GaAs HEMTs Khandelwal S, Yigletu FM, Iniguez B, Fjeldly TA
41 - 45	W-band differential power amplifier design in 45 nm low power CMOS Deferm N, Osorio JF, de Graauw A, Reynaert P
46 - 53	A propagation concept of negative bias temperature instability along the channel length in p-type metal oxide field effect transistor Djezzar B, Tahi H, Benabdelmoumene A, Chenouf A
54 - 62	Scaling challenge of Self-Aligned STI cell (SA-STI cell) for NAND flash memories Aritome S, Kikkawa T
63 - 66	Reverse leakage mechanism of Schottky barrier diode fabricated on homoepitaxial GaN Lei Y, Lu H, Cao DS, Chen DJ, Zhang R, Zheng YD
67 - 71	Rapid one-step room-temperature solid-state synthesis and formation mechanism of ZnO nanorods as H2S-sensing materials Cao YL, Jia DZ, Wang RY, Luo JM
72 - 76	Unexpected current lowering by a low work-function metal contact: Mg/SI-GaAs Dubecky F, Dubecky M, Hubik P, Kindl D, Gombia E, Baldini M, Necas V
77 - 81	A subthreshold current model for nanoscale short channel junctionless MOSFETs applicable to symmetric and asymmetric double-gate structure Jin X, Liu X, Kwon HI, Lee JH, Lee JH
82 - 85	Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric Min KS, Park C, Kang CY, Park CS, Park BJ, Kim YW, Lee BH, Lee JC, Bersuker G, Kirsch P, Jammy R, Yeom GY
86 - 98	Compact modeling solutions for short-channel SOI Schottky barrier MOSFETs Schwarz M, Holtij T, Kloes A, Iniguez B
99 - 102	Optical and electrical properties of hydrothermally grown Al-doped ZnO nanorods on graphene/Ni/Si substrate Wang LL, Lin BZ, Hung MP, Zhou L, Panin GN, Kang TW, Fu DJ
103 - 110	Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime Jazaeri F, Barbut L, Koukab A, Sallese JM
111 - 114	Achieving low sub-0.6-nm EOT in gate-first n-MOSFET with TiLaO/CeO2 gate stack Cheng CH, Chou KI, Chin A
115 - 121	Characteristics of nanostructured CdO/Si heterojunction photodetector synthesized by CBD Ismail RA, Al-Samarai AME, Mohmed SJ, Ahmed HH