Solid-State Electronics

Solid-State Electronics, Vol.48, No.12 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (37 articles)

2103 - 2107	Calculation of lattice heating in SiC RF power devices Bertilsson K, Harris C, Nilsson HE
2109 - 2114	A comprehensive geometrical and biasing analysis for latchup in 0.18-mu m COSi2STI CMOS structure Goh WL, Yeo KS
2115 - 2124	Capacitance analysis of devices with electrically floating regions Yamaguchi K, Horiuchi M
2125 - 2131	A compact deep-submicron MOSFET g(ds) model including hot-electron and thermoelectric effects Zhou X, Chiah SB, Lim KY
2133 - 2145	A sum-over-paths impulse-response moment-extraction algorithm for RC IC-interconnect networks Le Coz YL, Krishna D, Petranovic DM, Loh WM, Bendix P
2147 - 2151	Field emission of vertically-aligned carbon nanotube arrays grown on porous silicon substrate Li JT, Lei W, Zhang XB, Wang BP, Ba L
2153 - 2157	Predictive model of a reduced surface field p-LDMOSFET using neural network Kim B, Kim S, Lee DW, Roh TM, Kim J
2159 - 2163	Impulse responses of submicron GaAs photodetectors Ohno T, Ishibashi K, Aoyagi Y, Aida Y
2165 - 2173	Effects of generation/recombination processes and leakage current through interfacial "punctures" on electrical characterization of unipolar directly bonded semiconductor structures Stuchinsky VA
2175 - 2179	Influence of annealing ambient on GaAs oxide prepared by the liquid phase method Chou DW, Wang LT, Wang HH, Sze PW, Wang YH, Houng MP
2181 - 2189	Dynamic surface temperature measurements in SiC epitaxial power diodes performed under single-pulse self-heating conditions Hillkirk LM
2191 - 2198	Influences of nonuniformity in metal concentration in gate dielectric silicate on CMIS inverters' propagation delay time Ono M, Ino T, Koyama M, Takashima A, Nishiyama A
2199 - 2206	Analytical model for the programming of source side injection SST superflash split-gate cell using two-dimensional analysis Guan HN, Lee D, Li GP
2207 - 2211	Analysis and optimisation of the trench gated emitter switched thyristor Spulber O, Sweet M, Vershinin K, Luther-King N, De Souza MM, Narayanan EMS
2213 - 2217	High resolution transport spectroscopy in ultimate MOSFETs at very low temperature Sanquer M, Jehl X, Specht M, Bertrand G, Guegan G, Deleonibus S
2219 - 2223	Optoelectronic properties of Zn0.52Se0.4/Si Schottky diodes Venkatachalam S, Kumar RTR, Mangalaraj D, Narayandass SK, Kim K, Yi JS
2225 - 2234	Integral function method for determination of nonlinear harmonic distortion Cerdeira A, Aleman MA, Estrada M, Flandre D
2235 - 2241	Electrical properties of high permittivity ZrO2 gate dielectrics on strained-Si Maiti CK, Dalapati GK, Chatterjee S, Samanta SK, Varma S, Patil S
2243 - 2249	Quarter micron BiCMOS technology platform with implanted-base- or SiGe-bipolar transistor for wireless communication ICs Tilke AT, Rothenhausser S, Rochel M, Stahrenberg K, Goller K, Junge A, Pribil A, Foste B, Wiedemann J, Tegeler M, Berkner J, Wagner C, Dahl C
2251 - 2254	100 angstrom-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation Nishizawa J, Murai A, Makabe H, Ito O, Kimura T, Suto K, Oyama Y
2255 - 2262	Drain current thermal noise modeling for deep submicron n- and p-channel MOSFETs Han K, Shin H, Lee K
2263 - 2270	LDMOS in SOI technology with very-thin silicon film Bawedin M, Renaux C, Flandre D
2271 - 2275	Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics von Haartman M, Wu D, Malm BG, Hellstrom PE, Zhang SL, Ostling M
2277 - 2280	Differential capacitance as a method of determining the presence of a quasi-bidimensional electronic gas Martinez-Orozco JC, Gaggero-Sager LM, Vlaev SJ
2281 - 2286	Complementary tunneling transistor for low power application Wang PF, Hilsenbeck K, Nirschl T, Oswald M, Stepper C, Weis M, Schmitt-Landsiedel D, Hansch W
2287 - 2291	Preparation and electrical properties of SrTiO3 ceramics doped with M2O3-PbO-CuO Zhao JC, Wu XH, Li LT, Li X
2293 - 2297	Promotion of piezoelectric properties of lead zirconate titanate ceramics with (Zr,Ti) partially replaced by Nb2O5 Chen BH, Huang CL, Wu L
2299 - 2306	Hole mobility enhancement and Si cap optimization in nanoscale strained Si1-xGexPMOSFETs Shi ZH, Onsongo D, Rai R, Samavedam SB, Banerjee SK
2307 - 2313	Electrical simulation of the flicker in poly-Si TFT-LCD pixels for the large-area and high-quality TFT-LCD development and manufacturing Son MS, Yoo KH, Jang J
2315 - 2319	Characterization of double gate MOSFETs fabricated by a simple method on a recrystallized silicon film Lin XN, Feng CG, Zhang SD, Ho WH, Chan MS
2321 - 2327	A closed-form expression to analyze electronic properties in delta-doped heterostructures Chen XY, Nabet B
2329 - 2334	Simulation of submicrometer metal-semiconductor-metal ultraviolet photodiodes on gallium nitride Li J, Donaldson WR, Hsiang TY
2335 - 2338	The SILC study by PDO method Wang Z, Zhang HQ, Xu MZ, Tan CH
2339 - 2342	Determining the generation lifetime in a MOS capacitor using linear sweep techniques Tapajna M, Harmatha L
2343 - 2346	Fabrication of ZnO-based metal-insulator-semiconductor diodes by ion implantation Alivov YI, Look DC, Ataev BM, Chukichev MV, Mamedov VV, Zinenko VI, Agafonov YA, Pustovit AN
2347 - 2349	Comment on "Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts Osvald J
2351 - 2352	Response to "Comment on'Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts" [Solid State Electron. 2004;48 : 335-8] Tao M, Zhu J