Solid-State Electronics

Solid-State Electronics, Vol.47, No.2 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (33 articles)

173 - 173	International Semiconductor Device Research Symposium ISDRS 2001 Special Issue - Part II - Foreword Iliadis AA, Jones KA
175 - 179	Device physics considerations for SOI domino circuit design Subba N, Mitra S, Salman A, Ioannou DE
181 - 184	AlSb/InAs HEMTs with a TiW/Au gate metalization for improved stability Boos JB, Bennett BR, Kruppa W, Park D, Mittereder J, Chang W, Turner NH
185 - 192	Increased CMOS inverter switching speed with asymmetrical doping Akturk A, Goldsman N, Metze G
193 - 198	Deep levels in ion implanted field effect transistors on SiC Mitra S, Rao MV, Jones K, Papanicolaou N, Wilson S
199 - 204	Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach Kasai S, Yumoto M, Hasegawa H
205 - 212	Temperature-insensitive semiconductor quantum dot laser Asryan LV, Luryi S
213 - 222	Maturing ion-implantation technology and its device applications in SiC Rao MV
223 - 228	In0.5Ga0.5P/In0.22Ga0.78As pseudomorphic high electron mobility transistors with an oxidized GaAs gate for improved breakdown voltage characteristics Lee JW, Kang IH, Kang SJ, Jo SJ, In SK, Song HJ, Song JI
229 - 231	4H-SiC bipolar junction transistor with high current and power density Perez-Wurfl I, Krutsinger R, Torvik JT, Van Zeghbroeck B
233 - 239	On the temperature coefficient of 4H-SiC BJT current gain Li X, Luo Y, Fursin L, Zhao JH, Pan M, Alexandrov P, Weiner M
241 - 245	Demonstration of 4H-SiC avalanche photodiodes linear array Yan F, Qin C, Zhao JH, Bush M, Olsen G, Ng BK, David JPR, Tozer RC, Weiner M
247 - 251	Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors Lin HC, Wang MF, Lu CY, Huang TY
253 - 257	Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC Ruppalt LB, Stafford S, Yuan D, Jones KA, Ervin MH, Kirchner KW, Zheleva TS, Wood MC, Geil BR, Forsythe E, Vispute RD, Venkatesan T
259 - 262	Contact resistance extraction in pentacene thin film transistors Necliudov PV, Shur MS, Gundlach DJ, Jackson TN
263 - 269	Demonstration of high voltage (600-1300 V), high current (10-140 A), fast recovery 4H-SiC p-i-n/Schottky(MPS) barrier diodes Alexandrov P, Wright W, Pan M, Weiner M, Jiao L, Zhao JH
271 - 274	CMOS current-mode binary hysteresis with external controls Jiang Y, Newcomb RW
275 - 281	A numerical study of partial-SOI LDMOSFETs Park JM, Grasser T, Kosina H, Selberherr S
283 - 289	High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET Aniel F, Enciso-Aguilar M, Giguerre L, Crozat P, Adde R, Mack T, Seiler U, Hackbarth T, Herzog HJ, Konig U, Raynor B
291 - 295	A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation Nawaz M, Permthamassin K, Zaring C, Willander M
297 - 301	Contact resistance in organic thin film transistors Klauk H, Schmid G, Radlik W, Weber W, Zhou LS, Sheraw CD, Nichols JA, Jackson TN
303 - 306	Very high quality p-type AlxGa1-xN/GaN superlattice Yasan A, Razeghi M
307 - 313	Effects of underlying dielectric on boron implanted polysilicon in presence of fluorine Gupta S
315 - 322	Electrical characterization and structure investigation of quad flat non-lead package for RFIC applications Chen NS, Chiang K, Her TD, Lai YL, Chen CY
323 - 331	Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs Kameda A, Kasai S, Sato T, Hasegawa H
333 - 337	Effects of impurity traps on gate current and trapped charge in MOSFETs Islam SS, Khan MR, Anwar AFM
339 - 344	Frequency and temperature dependence of gain compression in GaN/AlGaN HEMT amplifiers Ahmed A, Islam SS, Anwar AFM
345 - 351	Thermal simulation for SOI devices using thermal-circuit models and device simulation Cheng MC, Wettimuny R, Habitz P, Ahmadi G
353 - 356	Preparation of phosphorous dope beta-irondisilicide thin films and application for devices Ehara T, Nakagomi S, Kokubun Y
357 - 360	Measurement of noise characteristics of MEMS accelerometers Mohd-Yasin F, Korman CE, Nagel DJ
361 - 366	Fabrication of poly-Si TFT's on glass with a novel method of back-reflecting low-temperature UV-assisted nickel-induced crystallization Rezaee L, Mohajerzadeh S, Khakifirooz A
367 - 376	Novel semiconductor device approach for finding acceptable solutions to classes of graph-based computing problems not otherwise possible De Claris N, Iliadis AA, Lacaze A
377 - 384	Design of a novel planar normally-off power VJFET in 4H-SiC Zhao JH, Li X, Tone K, Alexandrov P, Pan M, Weiner M