Solid-State Electronics

Solid-State Electronics, Vol.45, No.3 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (29 articles)

379 - 383	Determination of density and distribution of high-voltage stress-induced traps in O-2-, NO- and NO/O-2/NO-plasma grown oxides on strained Si Bera LK, Senapati B, Maikap S, Maiti CK
385 - 389	An improved method for determining the critical energy for interface trap generation of n-MOSFETs under V-g = V-d/2 stress mode Mu FC, Mao LF, Wei JL, Tan CH, Xu MZ
391 - 397	A simple subthreshold swing model for short channel MOSFETs Godoy A, Lopez-Villanueva JA, Jimenez-Tejada JA, Palma A, Gamiz F
399 - 404	Implanted collector profile optimization in a SiGeHBT process Malm BG, Johansson T, Arnborg T, Norstrom H, Grahn JV, Ostling M
405 - 410	Schottky rectifiers fabricated on free-standing GaN substrates Johnson JW, LaRoch JR, Ren F, Gila BP, Overberg ME, Abernathy CR, Chyi JI, Chou CC, Nee TE, Lee CM, Lee KP, Park SS, Park YJ, Pearton SJ
411 - 415	Fabrication and characteristics of Au/PZT/BIT/p-Si ferroelectric memory diode Yu J, Wang H, Dong XM, Zhou WL, Wang YB, Zheng YK, Zhao JH
417 - 421	Influence of the AlN buffer layer growth on AlGaN/GaN films deposited on (111)Si substrates Liaw HM, Venugopal R, Wan J, Melloch MR
423 - 426	Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy Lay TS, Huang KH, Hung WH, Hong M, Kwo J, Mannaerts JP
427 - 430	Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition Wen TC, Lee WI, Sheu JK, Chi GC
431 - 433	1/f noise behaviors of NO-nitrided n-MOSFETs Xu JP, Lai PT, Cheng YC
435 - 439	A novel method for determining the effect of interface trap generation on the degradation of n-MOSFETs under different hot-carrier stress modes Mu FC, Xu MZ, Tan CH
441 - 446	Geometry optimization of interdigitated Schottky-barrier metal-semiconductor-metal photodiode structures Averine SV, Chan YC, Lam YL
447 - 452	S-shaped negative differential resistance in 650 nm quantum well laser diodes Yin M, Smowton PM, Blood P, McAuley B, Button CC
453 - 459	Temperature dependence of turn-on processes in 4H-SiC thyristors Levinshtein ME, Mnatsakanov TT, Ivanov PA, Agarwal AK, Palmour JW, Rumyantsev SL, Tandoev AG, Yurkov SN
461 - 465	Effects of post-deposition treatments on ultrathin nitride/oxide gate stack prepared by RTCVD for ULSI devices Chen CH, Fang YK, Yang CW, Ting SF, Tsair YS, Wang MF, Chen SC, Yu CH, Liang MS
467 - 470	Effect of N-2 plasma treatments on dry etch damage in n- and p-type GaN Kent DG, Lee KP, Zhang AP, Luo B, Overberg ME, Abernathy CR, Ren F, Mackenzie KD, Pearton SJ, Nakagawa Y
471 - 474	Interface properties of N2O-annealed SiC metal oxide semiconductor devices Chakraborty S, Lai PT, Xu JP, Chan CL, Cheng YC
475 - 482	Comparison of titanium and platinum Schottky barrier heights to Ga0.47In0.53As obtained from Franz Keldysh oscillations and Schottky diode characteristics Shamir N, Sheinman B, Ritter D, Gershoni D
483 - 488	Modelling and characterisation of the input I-V curves of bipolar JFET structures showing a negative resistance behaviour Bellone S, Daliento S, Sanseverino A
489 - 494	Investigation of an InGaP/GaAs resonant-tunneling heterojunction bipolar transistor Pan HJ, Feng SC, Wang WC, Lin KW, Yu KH, Wu CZ, Laih LW, Liu WC
495 - 505	Microphotonic components for a mm-wave receiver Cohen DA, Levi AFJ
507 - 510	Threshold voltage definition and extraction for deep-submicron MOSFETs Zhou X, Lim KY, Qian W
511 - 517	An analytical method for the thermal layout optimisation of multilayer structure solid-state devices Pesare M, Giorgio A, Perri AG
519 - 523	Room temperature simulation of a novel quantum wire transistor Haque A, Quddus MR
525 - 526	A note on the relation between discrete and resonance energies in quantum structures Dargys A, Cimmperman P
527 - 529	On the mobility extraction for HMOSFETs Straube UN, Evans AGR, Braithwaite G, Kaya S, Watling J, Asenov A
531 - 534	Numerical analysis for root-mean-square roughness of SiO2/Si interface on direct tunneling current in ultrathin MOSFETs Mao LF, Tan CH, Xu MZ
535 - 536	Comments on "A closed form expression for punch-through limited breakdown voltage of parallel-plane junction" He J, Zhang X, Huang R, Wang YY
537 - 537	Comments on "A closed form expression for punch-through limited breakdown voltage of parallel-plane junction" - Response to the comments Chung SK