L1 - L3 |
Transitional change to amorphous fluorinated carbon film deposition under energetic irradiation of mass-analyzed carbon monofluoride ions on silicon dioxide surfaces Ishikawa K, Karahashi K, Tsuboi H, Yanai K, Nakamura M |
831 - 837 |
Thermal stability and hydrogen atom induced etching of nanometer-thick a-Si : H films grown by ion-beam deposition on Si(100) surfaces Biener J, Lutterloh C, Wicklein M, Dinger A, Kuppers J |
838 - 841 |
Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition Qu BZ, Zhu QS, Sun XH, Wan SK, Wang ZG, Nagai H, Kawaguchi Y, Hiramatsu K, Sawaki N |
842 - 845 |
Energetic deposition of niobium thin film by ecr-plasma Wu G, Phillips HL, Sundelin RM |
846 - 850 |
Effect of sputtering pressure on residual stress in Ni films using energy-dispersive x-ray diffraction Alfonso JA, Greaves ED, Lavelle B, Sajo-Bohus L |
851 - 859 |
Structural and mechanical properties of diamond-like carbon films deposited by direct current magnetron sputtering Broitman E, Hellgren N, Czigany Z, Twesten RD, Luning J, Petrov I, Hultman L, Holloway BC |
860 - 865 |
X-ray photoemission spectra and x-ray excited Auger spectrum investigation of the electronic structure of Pd-3(PS4)(2) Grasso V, Silipigni L |
866 - 873 |
Laser desorption time-of-flight mass spectrometry of fluorocarbon films synthesized by C4F8/H-2 plasmas Shibagaki K, Maeda T, Takada N, Sasaki K, Kadota K |
874 - 880 |
Pulsed laser ultrahigh vacuum deposited silicon in the presence of excess cesium and oxygen studied with x-ray photoelectron spectroscopy and atomic force microscopy Choo CK, Tanaka K, Suzuki H, Saotome N, Ichida K |
881 - 891 |
Edison's vacuum technology patents Waits RK |
892 - 894 |
Low temperature pulsed etching of large glass substrates Dubost L, Bellinger A, Perrin J, Boswell RW |
895 - 899 |
Effects of Si addition on the microstructural evolution and hardness of TI-Al-Si-N films prepared by the hybrid system of arc ion plating and sputtering techniques Park IW, Choi SR, Lee MH, Kim KH |
900 - 905 |
Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)(3)Cl precursor and mixtures Ar/O-2 as plasma gas Barranco A, Cotrino J, Yubero F, Girardeau T, Camelio S, Clerc C, Gonzalez-Elipe AR |
906 - 910 |
Microstructural and optical properties of aluminum oxide thin films prepared by off-plane filtered cathodic vacuum arc system Zhao ZW, Tay BK, Lau SP, Xiao CY |
911 - 921 |
Feature profile evolution in high-density plasma etching of silicon with Cl-2 Jin WD, Sawin HH |
922 - 936 |
Determination of Ti+-flux and Ar+-flux of ionized physical vapor deposition of titanium from multiscale model calibration with test structures Jacobs W, Kersch A, Ruf A, Urbansky N |
937 - 946 |
Comparison of the stability of hot and cold cathode ionization gauges Li DT, Jousten K |
947 - 954 |
Mechanism of hardening in Cr-Al-N-O thin films prepared by pulsed laser deposition Hirai M, Suzuki T, Suematsu H, Jiang W, Yatsui K |
955 - 966 |
Etching silicon by SF6 in a continuous and pulsed power helicon reactor Herrick A, Perry AJ, Boswell RW |
967 - 972 |
X-ray diffraction study of residual stresses and microstructure in tungsten thin films sputter deposited on polyimide Villain P, Goudeau P, Ligot J, Benayoun S, Badawi KF, Hantzpergue JJ |
973 - 978 |
Standards for surface analysis: ASTM committee E-42 on surface analysis Czanderna AW |
979 - 982 |
Raman and photoluminescence of ZnO films deposited on Si(111) using low-pressure metalorganic chemical vapor deposition Ye JD, Gu SL, Zhu SM, Chen T, Liu W, Qin F, Hu LQ, Zhang R, Shi Y, Zheng YD |
983 - 987 |
Surface morphology and dynamic scaling in growth of iron nitride thin films deposited by dc magnetron sputtering Wang X, Zheng WT, Gao LJ, Wei L, Guo W, Bai YB, Fei WD, Meng SH, He XD, Han JC |
988 - 993 |
Ionic densities and ionization fractions of sputtered titanium in radio frequency magnetron sputtering Okimura K, Nakamura T |
994 - 1003 |
Thermal plasma fabricated lithium niobate-tantalate films on sapphire substrate Kulinich SA, Yoshida T, Yamamoto H, Terashima K |
1004 - 1008 |
Characteristics of ultrathin SiO2 films using dry rapid thermal oxidation and Pt catalyzed wet oxidation Cho MH, Shin JS, Roh YS, Lyo IW, Jeong K, Whang CN, Lee JS, Yoo JY, Lee NI, Fujihara K, Moon DW |
1009 - 1016 |
Oxygen environmental Auger electron spectroscopy: Eliminating the electron beam effects on Al2O3 during Auger analysis Guo HS, Maus-Friedrichs W, Kempter V, Ji Y |
1017 - 1023 |
Investigation of SrBi2Ta2O9 thin films etching mechanisms in Cl-2/Ar plasma Efremov AM, Kim DP, Kim CI |
1024 - 1032 |
Substrate temperature effects on surface reactivity of SiFx (x=1,2) radicals in fluorosilane plasmas Williams KL, Fisher ER |
1033 - 1037 |
Growth and effects of remote-plasma oxidation on thin films of HfO2 prepared by metal-organic chemical-vapor deposition Yamamoto K, Asai M, Horii S, Miya H, Niwa M |
1038 - 1047 |
C4F8 dissociation in an inductively coupled plasma Radtke MT, Coburn JW, Graves DB |
1048 - 1054 |
Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition Alpuim P, Chu V, Conde JP |
1055 - 1063 |
Microstructure evolution of Al-Mg-B thin films by thermal annealing Tian Y, Constant A, Lo CCH, Anderegg JW, Russell AM, Snyder JE, Molian P |
1064 - 1068 |
Comparison of silicon dioxide layers grown from three polymethylsiloxane precursors in a high-density oxygen plasma Qi Y, Xiao ZG, Mantei TD |
1069 - 1072 |
A study for the bias control of indium-tin-oxide films synthesized by cesium assisted radio frequency magnetron sputtering Lee DY, Lee SJ, Song KM, Baik HK |
1073 - 1075 |
Infrared thermal annealing device Gladys MJ, Clarke I, O'Connor DJ |
1076 - 1076 |
Monitoring and purging dynamics of trace gaseous impurity in atmospheric pressure rapid thermal process (vol 21, pg 676, 2003) Hu YZ, Tay SP |
1079 - 1079 |
Papers from the 49th International Symposium of the AVS - Preface Lucovsky G |
1081 - 1086 |
Quantitative x-ray photoelectron spectroscopy: Simple algorithm to determine the amount of atoms in the outermost few nanometers Tougaard S |
1087 - 1091 |
Chemical bonding of perfluoropolyether with carbon underlying layer induced by visible laser light Zhu L, Zhang J, Liew T, Ye KD |
1092 - 1097 |
Development of radio-frequency magnetron sputtered indium molybdenum oxide Yoshida Y, Gessert TA, Perkins CL, Coutts TJ |
1098 - 1102 |
Characterizing topography-induced contrast in photoelectron emission microscopy Siegrist K, Williams ED, Ballarotto VW |
1103 - 1108 |
Progress in spectroscopic ellipsometry: Applications from vacuum ultraviolet to infrared Hilfiker JN, Bungay CL, Synowicki RA, Tiwald TE, Herzinger CM, Johs B, Pribil GK, Woollam JA |
1109 - 1114 |
Surface analytical characterization of SiO2 gradient membrane coatings on gas sensor microarrays Bruns M, Frietsch M, Nold E, Trouillet V, Baumann H, White R, Wright A |
1115 - 1119 |
dc field-emission analysis of GaAs and plasma-source ion-implanted stainless steel Hernandez C, Wang T, Siggins T, Bullard D, Dylla HF, Reece C, Theodore ND, Manos DM |
1120 - 1125 |
Interfacial interactions of polymer coatings with oxide-free phosphate films on metal surfaces Wang YQ, Sherwood PMA |
1126 - 1132 |
Valence-band x-ray photoelectron spectroscopic studies of different forms of sodium phosphate Asunskis AL, Gaskell KJ, Asunskis DJ, Sherwood PMA |
1133 - 1138 |
Valence-band x-ray photoelectron spectroscopic studies of vanadium phosphates and the formation of oxide-free phosphate films on metallic vanadium Asunskis DJ, Sherwood PMA |
1139 - 1144 |
Environment, health, and safety performance plays a vital role in sustaining the growth of the semiconductor industry Miller C, Worth W |
1145 - 1151 |
Cell adhesion and spreading on polymer surfaces micropatterned by ion beams Satriano C, Carnazza S, Licciardello A, Guglielmino S, Marletta G |
1152 - 1156 |
Fabrication of microstructured copper on an indium-tin-oxide surface using a micropatterned self-assembled monolayer as a template Asakura S, Hirota M, Fuwa A |
1157 - 1161 |
Dynamic and static measurements on epitaxial Fe/Si/Fe Kuanr BK, Buchmeier M, Buergler DE, Gruenberg P, Camley R, Celinski Z |
1162 - 1166 |
Correlation between microstructural and magnetic properties in Fe/KCoF3 bilayers Malkinski L, O'Keevan T, Camley RE, Celinski Z, He J, Zhou WL, Hecker M, Schneider CM, Szade J, Skrzypek D |
1167 - 1171 |
High-frequency noise measurements in spin-valve devices Stutzke NA, Burkett SL, Russek SE |
1172 - 1177 |
Metallization schemes for radio frequency microelectfornechanical system switches Leedy KD, Cortez R, Ebel JL, Strawser RE, Walker AP, DeSalvo GC, Young RM |
1178 - 1182 |
Inorganic electret using SiO2 thin, films prepared by radio-frequency magnetron sputtering Minami T, Utsubo T, Miyata T, Ohbayashi Y |
1183 - 1187 |
Real-time control of ion density and ion energy in chlorine inductively coupled plasma etch processing Chang CH, Leou KC, Lin C, Lin TL, Tseng CW, Tsai CH |
1188 - 1193 |
Nanoscale oxidation of zirconium surfaces: Kinetics and mechanisms Farkas N, Zhang G, Evans EA, Ramsier RD, Dagata JA |
1194 - 1197 |
Surface electronic structure of a vicinal Cu crystal Lobo J, Michel EG, Bachmann AR, Speller S, Roca L, Kuntze J, Ortega JE |
1198 - 1201 |
Surface modification of aligned carbon nanotube arrays for electrochemical sensing applications Soundarrajan P, Patil A, Dai LM |
1202 - 1204 |
Effects of carbon-containing gases on the field-emission current of multiwalled carbon-nanotube arrays Sheng LM, Liu P, Liu YM, Qian L, Huang YS, Liu L, Fan SS |
1205 - 1209 |
Energetic neutral fluxes towards surfaces-in a magnetically enhanced reactive ion etch-like reactor Sabisch W, Kratzer M, Brinkmann RP |
1210 - 1217 |
Formation of polycrystalline silicon ciermanium/HfO2 gate stack structure using inductively coupled plasma etching Chen JH, Tan KM, Wu N, Yoo WJ, Chan DSH |
1218 - 1224 |
Simplified model for calculating the pressure dependence of a direct current planar magnetron discharge Buyle G, Depla D, Eufinger K, Haemers J, De Gryse R, De Bosscher W |
1225 - 1229 |
Improvement of bond strength of plasma-sprayed hydroxyapatite/titanium composite coatings on titanium: Partial nitriding of titanium deposits by rf thermal plasma Inagaki M, Yokogawa Y, Kameyama T |
1230 - 1236 |
Experimental study on a new sterilization process using plasma source ion implantation. with N-2 gas Yoshida M, Tanaka T, Watanabe S, Takagi T, Shinohara M, Fujii S |
1237 - 1246 |
Improvement of luminance and luminous efficiency for optimal Penning gas mixtures in alternating current plasma display panels Lee SJ, Lee JK, Kang ES, Kim TW, Hwang HJ |
1247 - 1252 |
Barium-strontium-titanate etching characteristics in chlorinated discharges Stafford L, Margot J, Langlois O, Chaker M |
1253 - 1259 |
Measuring vacuum ultraviolet radiation-induced damage Lauer JL, Shohet JL, Hansen RW |
1260 - 1265 |
Microhollow cathode discharges Schoenbach KH, Moselhy M, Shi W, Bentley R |
1266 - 1271 |
High-rate deposition of abrasion resistant coatings using a dual-source expanding thermal plasma reactor Schaepkens M, Selezneva S, Moeleker P, Iacovangelo CD |
1272 - 1278 |
Stability of carbon subatomic films on metal surface against bombardment by low-energy gas ions Babaev VP, Suvorov AL, Zaluzhny AG, Dev'jatko JN, Lazarev NE, Zaluzhny AA |
1279 - 1283 |
Shape transformation of silicon trenches during hydrogen annealing Kuribayashi H, Hiruta R, Shimizu R, Sudoh K, Iwasaki H |
1284 - 1289 |
Kinetic Monte Carlo simulations of the autocatalytic adsorption effect: CO on ZnO Stephan J, Burghaus U |
1290 - 1293 |
Oxygen adsorption on Cu-9 at. %Al(111) studied by low energy electron diffraction and Auger electron spectroscopy Yoshitake M, Bera S, Yamauchi Y, Song WJ |
1294 - 1297 |
Bias voltage dependence of apparent local barrier height at constant tip-sample separation Yagyu S, Yoshitake M |
1298 - 1301 |
Electronic structure of SixSn((1-x))/Si(111)-(root 3 X root 3)R30 degrees phases Lobo J, Tejeda A, Mugarza A, Michel EG |
1302 - 1306 |
Using chemical probes to investigate properties of monolayer metal thin films Khan NA, Chen JG |
1307 - 1311 |
Adsorption and reaction of NO on oxidized and reduced SrTiO3(100) surfaces Azad S, Szanyi J, Peden CHF, Wang LQ |
1312 - 1316 |
Observation of an isotope effect in femtosecond laser-induced desorption of O-2/Pd(111) Quinn DP, Heinz TF |
1317 - 1321 |
Effects of adsorbates on charge exchange in Li+ ion scattering from Ni(100) Yang Y, Yarmoff JA |
1322 - 1325 |
Coadsorption of CO and hydrogen on the Zn-terminated surface of ZnO: A molecular beam study Kunat M, Burghaus U |
1326 - 1331 |
Thermal stability of thin Ti films on Al single crystal surfaces Ramana CV, Choi BS, Smith RJ, Hutchinson R, Stuk SP, Park BS, Saleh AA, Jeon DR |
1332 - 1335 |
Scanning tunneling microscopy studies of the Cu : Si(5512) system Woodworth PH, Moore JC, Baski AA |
1336 - 1341 |
p-type semiconducting Cu2O-CoO thin films prepared by magnetron sputtering Suzuki S, Miyata T, Minami T |
1342 - 1346 |
Chemical vapor deposition-formed p-type ZnO thin films Li X, Yan Y, Gessert TA, Perkins CL, Young D, DeHart C, Young M, Coutts TJ |
1347 - 1350 |
Super-smooth indium-tin oxide thin films by negative sputter ion beam technology Sohn MH, Kim D, Kim SJ, Paik NW, Gupta S |
1351 - 1354 |
Indium tin oxide films with low resistivity and low internal stress Takayama S, Sugawara T, Tanaka A, Himuro T |
1355 - 1358 |
Role of carbon in boron suboxide thin films Music D, Kugler VM, Czigany Z, Flink A, Werner O, Schneider JM, Hultman L, Helmersson U |
1359 - 1365 |
Effects of growth temperature on the properties of atomic layer deposition grown ZrO2 films Scarel G, Ferrari S, Spiga S, Wiemer C, Tallarida G, Fanciulli M |
1366 - 1370 |
Atomic layer deposition of Al2O3 thin films using dimethylaluminum isopropoxide and water Cho W, Sung K, An KS, Lee SS, Chung TM, Kim Y |
1371 - 1375 |
Origin of crystalline quality deterioration in epitaxial growth of CeO2 layers on Si substrates Inoue T, Sakamoto N, Horikawa A, Takakura H, Takahashi K, Ohashi M, Shida S |
1376 - 1380 |
Large remanent polarization of cerium-modified bismuth-titanate thin films for ferroelectric random access memories Kim KT, Kim CI, Kang DH, Shim IW |
1381 - 1385 |
Analysis of stresses in Ru thin films prepared by chemical vapor deposition Lim HJ, Kang SY, Hwang CS, Kim HJ |
1386 - 1388 |
Effects of graphite content on carbon nitride films prepared by hot carbon filament chemical vapor deposition Aizawa S, Aono M, Kitazawa N, Watanabe Y, Shimizu O, Suda Y |
1389 - 1392 |
Effects of starting material of aluminum doped zinc oxide underlayer on the electric properties of palladium doped silver film Oyama T, Maekawa M, Yanagisawa T |
1393 - 1398 |
X-ray photoelectron spectroscopy study of the first stages of ZnO growth and nanostructure dependence of the effects of polarization at ZnO/SiO2 and ZnO/Al2O3 interfaces Martin-Concepcion AI, Yubero F, Espinos JP, Gonzalez-Elipe AR, Tougaard S |
1399 - 1403 |
Properties of Co-deposited indium tin oxide and zinc oxide films using a bipolar pulse power supply and a dual magnetron sputter source Hwang MS, Jeong HS, Kim WM, Seo YW |
1404 - 1408 |
High-rate deposition of ZnO thin films by vacuum arc plasma evaporation Miyata T, Ida S, Minami T |
1409 - 1413 |
Photocatalytic properties of TiO2/WO3 bilayers deposited by reactive sputtering Takahashi T, Nakabayashi H, Yamada N, Tanabe J |
1414 - 1418 |
Influence of working gas pressure on structure and properties of WO3 films reactively deposited by rf magnetron sputtering Takahashi T, Tanabe J, Yamada N, Nakabayashi H |
1419 - 1423 |
Correlation between crystallographic orientations and Raman spectra of TiO2 sputtered films with changing degrees of plasma exposure Takahashi T, Nakabayashi H, Tanabe J, Yamada N, Mizuno W |
1424 - 1430 |
Thermal behavior of hafnium-based ultrathin films on silicon Pezzi RP, Morais J, Dahmen SR, Bastos KP, Miotti L, Soares GV, Baumvol IJR, Freire FL |
1431 - 1435 |
Epitaxial growth of thin Ag and Au films on Si(111) using thin copper silicide buffer layers Pedersen K, Morgen P, Pedersen TG, Li ZS, Hoffmann SV |
1436 - 1441 |
Present status of the KEK B-factory vacuum system Suetsugu Y, Kanazawa K, Kato S, Hisamatsu H, Shimamoto M, Shirai M |
1442 - 1446 |
Development of sputtering systems for large-area deposition of CuIn1-xGaxSe1-ySy thin-film solar cells Dhere NG, Gade VS, Jahagirdar AH, Kadam AA, Patil HP, Kulkarni SS |
1447 - 1451 |
Vacuum chamber with distributed titanium sublimation pumping for the G-line wiggler at Cornell High Energy Synchrotron Source Li Y, He Y, Mistry NB |
1452 - 1457 |
Comparison between Monte Carlo and analytical calculation of the conductance of cylindrical and conical tubes Gomez-Goni J, Lobo PJ |
1458 - 1463 |
Pumping performance investigation of a turbobooster vacuum pump equipped with spiral-grooved rotor and inner housing by the computational fluids dynamics method Cheng HP, Chiang MT |
1464 - 1468 |
Effects of high working pressure on dielectric properties of sputtered (Ba,Sr)TiO3 films on Ir electrodes Lai CH, Wu YC, Ma S |
1469 - 1474 |
Study of damage reduction of (Ba-0.6,Sr-0.4)TiO3 thin films etched in Ar/CF4 plasmas Kang PS, Kim KT, Kim DP, Kim CI |
1475 - 1481 |
Etch characteristics of Bi4-xEuxTi3O12 (BET) thin films using inductively coupled plasma Lim KT, Kim KT, Kim DP, Kim CI |
1482 - 1487 |
Effect of N-2 annealing on AlZrO oxide Petry J, Richard O, Vandervorst W, Conard T, Chen J, Cosnier V |
1488 - 1493 |
Potential application of tungsten carbides as electrocatalysts Hwu HH, Chen JGG |
1494 - 1499 |
Investigation of oxide (V2O5) thin films as electrodes for rechargeable microbatteries using Li Talledo A, Valdivia H, Benndorf C |
1500 - 1505 |
Combined atomic force microscope and acoustic wave devices: Application to electrodeposition Friedt JM, Francis L, Choi KH, Frederix F, Campitelli A |
1506 - 1509 |
Scanning tunneling microscopy imaging of charged defects on clean Si(100)-(2X1) Brown GW, Grube H, Hawley ME, Schofield SR, Curson NJ, Simmons MY, Clark RG |
1510 - 1514 |
Electrical contact behavior of Ni/C60/4H-SiC structures Lu WJ, Mitchel WC, Landis GR, Crenshaw TR, Collins WE |
1515 - 1518 |
Self-assembly and magnetism in core-shell microspheres Bizdoaca EL, Spasova M, Farle M, Hilgendorff M, Liz-Marzan LM, Caruso F |
1519 - 1523 |
Study of a magnetic cluster/superconducting matrix interface: Co/Nb system Dupuis V, Jamet M, Favre L, Tuaillon-Combes J, Melinon P, Perez A |
1524 - 1527 |
Surface morphology and magnetization reversal Lukaszew RA, Zhang ZD, Cionca C, Stoica V, Clarke R |
1528 - 1538 |
Adhesion and friction studies of microelectromechanical systems/nanoelectromechanical systems materials using a novel microtriboapparatus Liu HW, Bhushan B |
1539 - 1544 |
Product development and yield enhancement through failure analysis of integrated circuits with scanning capacitance microscopy Tangyunyong P, Nakakura CY |
1545 - 1549 |
In situ studies of the amorphous to microcrystalline transition of hot-wire chemical vapor deposition Si : H films using real-time spectroscopic ellipsometry Levi DH, Nelson BP, Perkins JD, Moutinho HR |
1550 - 1562 |
Critical tasks in high aspect ratio silicon dry etching for microelectromechanical systems Rangelow IW |
1563 - 1567 |
Reduction of etching damage in lead-zirconate-titanate thin films with inductively coupled plasma Lim KT, Kim KT, Kim DP, Kim CI |
1568 - 1573 |
Inductively coupled Cl-2/Ar plasma: Experimental investigation and modeling Efremov AM, Kim DP, Kim CI |
1574 - 1578 |
High-temperature fiber matrices: Electrospinning and rare-earth modification Kataphinan W, Teye-Mensah R, Evans EA, Ramsier RD, Reneker DH, Smith DJ |
1579 - 1584 |
Profile coatings and their applications Liu C, Conley R, Assoufid L, Macrander AT, Ice GE, Tischler JZ, Zhang K |