2831 - 2835 |
Fabrication of Excess PbO-Doped Pb(Zr0.52Ti0.48)O-3 Thin-Films Using Radio-Frequency Magnetron Sputtering Method Kim TS, Kim DJ, Lee JK, Jung HJ |
2836 - 2841 |
Properties of Crystallized Si1-xGex Thin-Films Deposited by Sputtering Jelenkovic EV, Tong KY, Sun Z, Mak CL, Cheung WY |
2842 - 2846 |
Direct-Current Magnetron-Sputtered W-AIN Cermet Solar-Absorber Films Zhang QC |
2847 - 2853 |
Simulation of Sputter-Deposition at High-Pressures Smy T, Tan L, Winterton SS, Dew SK, Brett MJ |
2854 - 2858 |
Time-Dependence and Spatial-Distribution of the Deposition Rate of YBa2Cu3O7 Thin-Films in 90-Degrees Off-Axis Sputtering Quigley PG, Rao RA, Eom CB |
2859 - 2863 |
Mass and Energy Measurements of the Species Responsible for CBN Growth in RF Bias Sputter Conditions Tsuda O, Tatebayashi Y, Yamadatakamura Y, Yoshida T |
2864 - 2874 |
Discharge Disruptions in a Helicon Plasma Source Shamrai KP, Virko VF, Blom HO, Pavlenko VP, Taranov VB, Jonsson LB, Hedlund C, Berg S |
2875 - 2879 |
Development of an Energetic Ion-Assisted Mixing and Deposition Process for TiNx and Diamond-Like Carbon-Films, Using a Coaxial Geometry in Plasma Source Ion-Implantation Malik SM, Fetherston RP, Conrad JR |
2880 - 2884 |
Influence on Selective SiO2/Si Etching of Carbon-Atoms Produced by CH4 Addition to a C4F8 Permanent-Magnet Electron-Cyclotron-Resonance Etching Plasma Den S, Kuno T, Ito M, Hori M, Goto T, Okeeffe P, Hayashi Y, Sakamoto Y |
2885 - 2892 |
Characterization of an Azimuthally Symmetrical Helicon Wave High-Density Plasma Source Tynan GR, Bailey AD, Campbell GA, Charatan R, Dechambrier A, Gibson G, Hemker DJ, Jones K, Kuthi A, Lee C, Shoji T, Wilcoxson M |
2893 - 2904 |
Structure and Chemical-Composition of Fluorinated SiO2-Films Deposited Using Sif4/O-2 Plasmas Han SM, Aydil ES |
2905 - 2907 |
Characteristics of Spray Pyrolytic ZnO-in Thin-Films Grown from Zinc Acetate and Indium Nitrate Maldonado A, Olvera MD, Asomoza R, Zironi EP, Canetasortega J, Palaciosgomez J |
2908 - 2914 |
Structure of Fluorine-Doped Silicon-Oxide Films Deposited by Plasma-Enhanced Chemical-Vapor-Deposition Yoshimaru M, Koizumi S, Shimokawa K |
2915 - 2922 |
Interaction Between Water and Fluorine-Doped Silicon-Oxide Films Deposited by Plasma-Enhanced Chemical-Vapor-Deposition Yoshimaru M, Koizumi S, Shimokawa K |
2923 - 2929 |
Parametrization of the Laframboise Theory for Cylindrical Langmuir Probe Analysis Mausbach M |
2930 - 2937 |
Electrical Characterization of a Processing Plasma Chamber Roth WC, Carlile RN, Ohanlon JF |
2938 - 2944 |
Investigation of Stored Energy in Plasma-Deposited TiNx Films Wulff H, Eggs C |
2945 - 2948 |
Effect of Grain-Size and Pb Dopant on Luminescence in BaTiO3 Katiyar RS, Meng JF, Rai BK |
2949 - 2958 |
Experimental Test of the Propagation of a He Pressure Front in a Long, Cryogenically Cooled Tube Wallen E |
2959 - 2967 |
Transition-Metal Cleaning Using Thermal Beams Chang JP, Zhang Z, Xu H, Sawin HH, Butterbaugh JW |
2968 - 2982 |
Doping of Amorphous and Microcrystalline Silicon Films Deposited by Hot-Wire Chemical-Vapor-Deposition Using Phosphine and Trimethylboron Brogueira P, Chu V, Ferro AC, Conde JP |
2983 - 2987 |
Characterization of Carbon Nitride Produced by High-Current Vacuum-Arc Deposition Hartmann J, Siemroth P, Schultrich B, Rauschenbach B |
2988 - 2992 |
Diamond Films Grown by Hot-Filament Chemical-Vapor-Deposition from a Solid Carbon Source Woo HK, Lee ST, Lee CS, Bello I, Lam YW |
2993 - 2997 |
Dependence of Atomic Layer-Deposited Al2O3 Films Characteristics on Growth Temperature and Al Precursors of Al(CH3)(3) and AlCl3 Yun SJ, Lee KH, Skarp J, Kim HR, Nam KS |
2998 - 3004 |
Kinetics of Adsorption and Photodesorption of Hydrogen on Copper Surfaces Bailey WH, Rahman TS, Strongin M, Davenport JW |
3005 - 3014 |
Surface Processes Occurring on TiSi2 and CoSi2 in Fluorine-Based Plasmas - Reactive Ion Etching in CF4/Chf3 Plasmas Baklanov MR, Vanhaelemeersch S, Storm W, Kim YB, Vandervorst W, Maex K |
3015 - 3023 |
Ion Distribution-Functions in Inductively-Coupled Radio-Frequency Discharges in Argon-Chlorine Mixtures Woodworth JR, Riley ME, Miller PA, Nichols CA, Hamilton TW |
3024 - 3031 |
Analysis of the Etching of Silicon in an Inductively-Coupled Chlorine Plasma Using Laser Thermal-Desorption Choe JY, Herman IP, Donnelly VM |
3032 - 3035 |
Ge Growth on Si(001) Studied by X-Ray Photoelectron-Spectroscopy Peak Shape-Analysis and Atomic-Force Microscopy Schleberger M, Simonsen AC, Tougaard S, Hansen JL, Larsen AN |
3036 - 3043 |
Reflectance Anisotropy of the Si(100)1X2-as Surface - Discrete Dipole Calculation Patterson CH, Herrendorfer D |
3044 - 3049 |
Na Impurity Chemistry in Photovoltaic Cigs Thin-Films - Investigation with X-Ray Photoelectron-Spectroscopy Niles DW, Ramanathan K, Hasoon F, Noufi R, Tielsch BJ, Fulghum JE |
3050 - 3059 |
X-Ray Photoelectron-Spectroscopy Characterization of Semiconductor Thin-Films Using Simultaneous Mg/Zr Excitation Allgeyer DF |
3060 - 3064 |
Preparation and Optical Studies on Flash Evaporated Sb2S3 Thin-Films Mahanty S, Merino JM, Leon M |
3065 - 3068 |
Reflection Adsorption Infrared-Spectroscopy of the Oxidation of Thin-Films of Boron and Hafnium Diboride Grown on HF(0001) Belyansky M, Trenary M |
3069 - 3081 |
Ultrahigh-Vacuum Deposition Reflectometer System for the in-Situ Investigation of Y/Mo Extreme-Ultraviolet Multilayer Mirrors Montcalm C, Sullivan BT, Ranger M, Pepin H |
3082 - 3085 |
Low-Temperature Deposition of Epitaxial Titanium Carbide on MgO(001) by Coevaporation of C-60 and Ti Norin L, Mcginnis S, Jansson U, Carlsson JO |
3086 - 3092 |
Roles of Ion Irradiation for Crystalline Growth and Internal-Stresses in Nickel Films Onto Silicon Substrates Prepared by the Ion-Beam and Vapor-Deposition Method Kuratani N, Murakami Y, Imai O, Ebe A, Nishiyama S, Ogata K |
3093 - 3103 |
Temperature-Dependence of the Electron-Induced Gas Desorption Yields on Stainless-Steel, Copper, and Aluminum Gomezgoni J, Mathewson AG |
3104 - 3114 |
Surface Kinetic-Study of Ion-Induced Chemical-Vapor-Deposition of Copper for Focused Ion-Beam Applications Chiang TP, Sawin HH, Thompson CV |
3115 - 3119 |
Deconvolution of the Gaussian-Convoluted Profiles of Mercury Ions Implanted into Nickel Shi BR, Cue N, Wang KM |
3120 - 3126 |
Kinetics of F Atoms and Fluorocarbon Radicals Studied by Threshold Ionization Mass-Spectrometry in a Microwave CF4 Plasma Tserepi A, Schwarzenbach W, Derouard J, Sadeghi N |
3127 - 3133 |
Static Secondary-Ion Mass-Spectrometry Study of the Decomposition of Triethylgallium on GaAs(100) Wong KC, Jackson MS, Mcellistrem MT, Culp RD, Ekerdt JG |
3134 - 3137 |
Plasma Fluorination of Polyimide Thin-Films Endo K, Tatsumi T |
3138 - 3142 |
Improved Growth and Thermal-Stability of Parylene Films Ganguli S, Agrawal H, Wang B, Mcdonald JF, Lu TM, Yang GR, Gill WN |
3143 - 3153 |
Electrical-Properties of Metal-Insulator-Semiconductor Structures with Silicon-Nitride Dielectrics Deposited by Low-Temperature Plasma-Enhanced Chemical-Vapor-Deposition Distributed Electron-Cyclotron-Resonance Hugon MC, Delmotte F, Agius B, Courant JL |
3154 - 3157 |
Analysis and Characterization of Native-Oxide Growth on Epitaxial Si1-xGex Films After a Chemical Clean Lee IM, Takoudis CG |
3158 - 3162 |
Energy-Spectra of Secondary Neutrals Obtained by Means of the Electrostatic Energy Filter of a Commercial Low-Pressure HF-Plasma Secondary Neutral Mass-Spectrometer Jenett H, Hodoroaba VD |
3163 - 3169 |
Corrosion-Resistance of Titanium Nitride and Mixed Titanium Titanium Nitride Coatings on Iron in Humid SO2-Containing Atmospheres Agudelo AC, Gancedo JR, Marco JF, Hanzel D |
3170 - 3170 |
3-Dimensional Deposition of Tin Film Using Low-Frequency (50 Hz) Plasma Chemical-Vapor-Deposition (Vol 15, Pg 1897, 1997) Shimozuma M, Date H, Iwasaki T, Tagashira H, Yoshino M, Yoshida K |