3 - 10 |
Tunneling in quantum Hall systems Matulis A, Levinson Y |
11 - 18 |
Optimization of heterojunction devices for high-frequency and low-noise operation Mateos J |
19 - 26 |
Interaction of microwave heated hot carriers with recombination centers Godlewski M, Ivanov VY, Khachapuridze A, Narkowicz R, Bergman PJ, Monemar B |
27 - 30 |
Fine oscillatory structure of the current passing through resonant-tunneling diodes Pelya O, Figielski T, Kosiel K, Wosinski T, Makosa A, Dobrowolski W, Dobrzanski L |
31 - 34 |
Carrier dynamics in small InAs/GaAs quantum dots Zurauskiene N, Marcinkevicius S, Janssen G, Goovaerts E, Bouwen A, Koenraad PM, Wolter JH |
35 - 38 |
Weak localization in SiGe quantum wells doped with boron Zobl R, Gornik E, Altukhov IV, Zhdanova NG, Landsberg EG, Korolev KA, Kagan MS |
39 - 42 |
Nonequilibrium spectroscopy of inter-and intraband transitions in quantum dot structures Vorobjev LE, Glukhovskoy AV, Danilov SN, Panevin VY, Firsov DA, Fedosov NK, Shalygin VA, Andreev AD, Volovik BV, Ledentsov NN, Livshits DA, Ustinov VM, Tsatsul'nikov AF, Shernyakov YM, Grundmann M, Weber A, Fossard F, Julien FH |
43 - 50 |
Growth and characterisation of Mg-based low dimensional systems for blue-green optoelectronics Prete P |
51 - 58 |
Quantum and random impurity effects in ultra-short MOSFET Dollfus P, Barraud S, Cassan E, Monsef F, Galdin S |
59 - 62 |
Magnetotransport in low dimensional honeycomb-shape GaAs networks Ksenevich VK, Galibert J, Roskos HG, Samuilov VA |
63 - 66 |
Influence of structural properties and of growth conditions on exciton properties in ZnCdSe/ZnSe quantum well structures Godlewski M, Guziewicz E, Leonardi K, Hommel D, Bergman PJ, Monemar B |
67 - 70 |
Morphology and photoluminescence of anodially grown porous layers on some Ga-V compounds Bendorius RA, Jasutis V, Kavaliauskas J, Pacebutas V, Sabataityte J, Simkiene I, Tvardauskas H, Baranov A |
71 - 74 |
Spintronics at the nanostructure level Marciak-Kozlowska J, Kozlowski M |
75 - 77 |
Time and energy scales for thermal properties of nanoparticles Marciak-Kozlowska J, Kozlowski M, Mucha Z |
79 - 82 |
Light emission from silicon nanocrystals Puritis T, Kaupuzs J |
83 - 86 |
Study of photomodulation dynamics of excitonic reflectivity in GaAs/AlAs quantum well heterostructures Kavaliauskas J, Cechavicius B, Krivaite G, Kadushkin VI, Shangina EL |
87 - 90 |
Photoconductivity of regular low dimensional arrays of GaAs wires Ksenevich VK, Valusis G, Roskos HG, Samuilov VA |
91 - 94 |
Optical and electrical characteristics of InGaAsP MQW BH DFB laser diodes Matukas J, Palenskis V, Pavasaris C, Sermuksnis E, Vysniauskas J, Pralgauskaite S, Letal G, Smetona S, Simmons JG, Sobiestijanskas R |
97 - 105 |
Hot-electron microwave noise in a two-dimensional electron gas Matulionis A, Liberis J |
107 - 116 |
Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions Verevkin A, Gershenzon EM, Gol'tsman GN, Ptitsina NG, Chulkova GM, Smirnov KS, Sobolewski R |
117 - 120 |
Energy relaxation time and microwave noise in InAs/AlSb/GaSb/GaAs heterostructures Ardaravicius L, Liberis J, Matulionis A, Mel'tser BY, Solov'ev VA, Shubina TV, Ivanov SV, Kop'ev PS |
121 - 133 |
Kinetic approach to fluctuation phenomena: A historical outline Katilius R, Matulioniene I |
135 - 138 |
Investigation of degenerate carrier heating in tunneling GaAs p-n junction Asmontas S, Gradauskas J, Seliuta D, Suziedelis A, Sirmulis E |
139 - 142 |
Dynamic negative differential conductivity due to electron transit time effects Kozlov VA, Kozyrev AB, Samokhvalov AV |
143 - 146 |
Influence of hole recombination rate on microwave detection in compensated germanium Asmontas S, Bumeliene S, Gradauskas J, Seliuta D, Suziedelis A, Valusis G |
147 - 150 |
C-02 laser induced hot carrier photoeffect in HgCdTe Asmontas S, Gradauskas J, Seliuta D, Suziedelis A, Sirmulis E, Valusis G, Tetyorkin VV |
151 - 154 |
Evaluation of high-speed bipolar transistors for application to chaotic Colpitts oscillator Bumeliene S, Mykolaitis G, Lasiene G, Cenys A, Tamasevicius A |
155 - 158 |
RF noise in a short-channel n-MOSFET: a Monte Carlo study Rengel R, Mateos J, Pardo D, Gonzalez T, Martin MJ |
159 - 162 |
Optically controlled fast switching of microstrip resonator Kancleris Z, Mickevicius S, Simniskis R, Silenas A |
165 - 172 |
Quantum-confined impurities as single-electron quantum dots: Application in Tereherz emitters Harrison P, Halsall MP, Zheng WM |
173 - 180 |
Semiconductor technology for THz integration Hartnagel HL, Ichizli V, Rodriguez-Girones M |
181 - 188 |
Resonant acceptor states and stimulated THz emission in semiconductors and semiconductor structures Kagan MS, Yassievich IN |
189 - 191 |
Low-voltage lasing of p-Ge under uniaxial stress Zobl R, Gornik E, Altukhov IV, Sinis VP, Korolev KA, Kagan MS |
193 - 196 |
GHz-THz detection by asymmetrically-shaped GaAs: Bulk material versus nanostructures Valusis G, Sachs R, Roskos HG, Suziedelis A, Gradauskas J, Asmontas S, Sirmulis E, Kohler K |
197 - 204 |
Terahertz semiconductor laser structures Zhao QX, Willander M |
205 - 208 |
Comparative study of Terahertz generation in wide band gap bulk semiconductors Starikov E, Shiktorov P, Gruzinskis V, Reggiani L, Varani L, Vaissiere JC, Zhao H |
209 - 212 |
Injection lasers based on intraband carrier transitions Towe E, Pal D, Vorobjev LE, Glukhovskoy AV, Danilov SN, Zerova VL, Panevin VY, Firsuv DA, Shalygin VA, Zegrya GG, Weber A, Grundmann M |
213 - 216 |
InN submicron structure for generation at terahertz frequencies Gruzinskis V, Starikov E, Shiktorov P |
217 - 220 |
Theoretical design and analysis of SiC n(++)pn(-)n(+)nn(++)-(=)diodes for 400 GHz microwave power generation Gruzinskis V, Starikov E, Shiktorov P, Zhao JH |
221 - 225 |
Influence of uniaxial stress on the polarization of spontaneous emission from p-Ge Abramov AA, Akimov VI, Bondar VM, Poroshin VN, Tulupenko VN |
227 - 230 |
Generation and frequency transformation of high-frequency radiation in bi-modal electrodynamic system filled by asymmetric multilayer heterostructure Kozyrev AB, Belyantsev AM |
233 - 240 |
Ultrafast goes local Achermann M, Siegner U, Keller U |
241 - 248 |
Ultrafast & highly efficient resonant cavity enhanced photodiodes Ozbay E, Kimukin I, Biyikli N |
249 - 252 |
Ultrafast risetime GaAs photoconductive switches Schamiloglu E, Islam NE, Agee FJ |
253 - 258 |
Label-free probing of the binding state of DNA by time-domain terahertz sensing Bolivar PH, Brucherseifer M, Nagel M, Kurz H, Bosserhoff A, Buttner R |
259 - 264 |
Optimization of ultrafast optical transitions using genetic algorithm Dargys A |
265 - 268 |
Stimulated emission in InGaN/GaN quantum wells Jursenas S, Miasojedovas S, Kurilcik N, Kurilcik G, Zukauskas A, Yang J, Khan MA, Shur MS, Gaska R |
269 - 272 |
Ultrafast optical nonlinearities in GaAs crystals driven by a strong terahertz-wave Subacius L, Kasalynas I, Jarasiunas K |
273 - 276 |
Determining the antiferromagnetic resonance frequency in semimagnetic semiconductors by means of surface polaritons Beletskii NN, Borysenko SA |
279 - 286 |
Charge carrier photogeneration in conjugated polymer Gulbinas V, Kananavicius R, Valkunas L, Bassler H, Sundstrom V |
287 - 290 |
Graded-gap AlxGa1-xAs x-ray detectors with fast photovoltaic response Silenas A, Pozela J, Pozela K, Jasutis V, Dapkus L, Juciene V |
291 - 296 |
Mechanism of generation of defects in a semiconductor by pulse laser radiation Medvid A, Hatanaka Y, Litovchenko V, Fedorenko L, Korbutjak D, Krylyuk S |
297 - 300 |
Manganite based strong magnetic field sensors used for magnetocumulative generators Balevicius S, Novickij J, Abrutis A, Kiprijanovic O, Anisimovas F, Simkevicius C, Stankevic V, Vengalis B, Zurauskiene N, Altgilbers LL |
301 - 304 |
Features of charge carrier transport in mu c-Si : H/a-Si : H superlattices Juska G, Nekrasas N, Stuchlik I, Arlauskas K, Viliunas M, Kocka J |
305 - 308 |
Light reflection band between the Zeeman lines in diluted magnetic semiconductors Brazis R, Narkowicz R, Safonova L, Kossut J |
309 - 312 |
Fast electrical and optical pulse induced resistance change in thin manganite films Balevicius S, Kiprijanovic O, Jukna A, Anisimovas F, Abrutis A, Plausinaitiene V, Parseliunas J, Vengalis B, Zurauskiene N |
313 - 316 |
Electric properties and irradiation of a pulse-laser-excited miniature magnetic-dipole antenna Jukna A, Parseliunas J, Simniskis R, Aleksandrovic J, Balevicius S, Karlsson UO |
317 - 320 |
Defects, their interaction and modification by irradiation in semi-insulating GaAs Kazukauskas V, Kuprusevicius E, Vaitkus JV, Smith KM |
321 - 324 |
Carrier traps and effect of oxygen in MEH-PPV polymer diodes Kazukauskas V, Tzeng H, Chen SA |
325 - 328 |
Role of shallow electron traps in the fast transient optical phenomena of alkali halide crystals Ziraps V |
329 - 332 |
Active media for optical data processing Vale G, Kruminsh A |