Solar Energy Materials and Solar Cells

Solar Energy Materials and Solar Cells, Vol.49, No.1 Entire volume, number list

ISSN: 0927-0248 (Print)

In this Issue (55 articles)

1 - 6	Effective conversion efficiency enhancement of amorphous silicon modules by operation temperature elevation Kondo M, Nishio H, Kurata S, Hayashi K, Takenaka A, Ishikawa A, Nishimura K, Yamagishi H, Tawada Y
7 - 12	More insights from CPM and PDS. Charged and neutral defects in a-Si:H Siebke F, Stiebig H, Carius R
13 - 18	Changes of infrared absorption by light soaking and thermal quenching in a-Si:H Gotoh T, Nonomura S, Hirata S, Masui N, Nitta S
19 - 26	Growth of boron-doped ZnO thin films by atomic layer deposition Sang B, Yamada A, Konagai M
27 - 33	Controlled nucleation of thin microcrystalline layers for the recombination junction in a-Si stacked cells Vaucher NP, Rech B, Fischer D, Dubail S, Goetz M, Keppner H, Wyrsch N, Beneking C, Hadjadj O, Shklover V, Shah A
35 - 44	Towards high-efficiency thin-film silicon solar cells with the ＇＇micromorph＇＇ concept Meier J, Dubail S, Platz R, Torres P, Kroll U, Selvan JAA, Vaucher NP, Hof C, Fischer D, Keppner H, Fluckiger R, Shah A, Shklover V, Ufert KD
45 - 51	Atomic scale characterization of a-Si:H/a-SiC:H interface structures Miyazaki S, Yoshida Y, Miyoshi Y, Hirose M
53 - 59	Preparation of (n)a-Si:H/(p)c-Si heterojunction solar cells Borchert D, Grabosch G, Fahrner WR
61 - 67	Electrical properties of Cl incorporated hydrogenated amorphous silicon Lee KH, Kim SK, Lee KS, Choi JH, Kim CS, Jang J, Pietruszko SM, Kostana M
69 - 74	Thermal equilibration and photocreation of neutral dangling bonds in a-Si:H caused by floating bonds Shimizu T, Kumeda M, Nishino T
75 - 80	Comparative study of defect states in light-soaked and high-temperature-annealed a-Si:H Kumeda M, Takeda M, Durny R, Shimizu T
81 - 88	Deposition of microcrystalline silicon by electron beam excited plasma Sasaki T, Ryoji M, Ichikawa Y, Tohkai M
89 - 94	Characterization of high-quality a-SiC:H films prepared by hydrogen-radical CVD method Andoh N, Nagayoshi H, Kanbashi T, Kamisako K
95 - 100	Preparation of very stable and low hydrogen content amorphous silicon films by hydrogen-radical CVD method Tsuyuki T, Nagayoshi H, Kimura M, Lo L, Kamisako K
101 - 106	Amorphous silicon solar cell on textured tempered glass substrate prepared by sandblast process Taniguchi H, Sannomiya H, Kajiwara K, Nomoto K, Yamamoto Y, Hiyoshi K, Kumada H, Murakami M, Tomita T
107 - 112	Development of tempered-glass substrates with TCO films for a-Si solar cells Fukawa M, Sato K, Tsukamoto T, Adachi K, Nishimura H
113 - 119	Fabrication of amorphous silicon p-i-n solar cells using ion shower doping technique Moon BY, Choi JH, Kim JG, Jang J, Kim DW, Bae SS, Yoon KS
121 - 125	Development of high-efficiency a-Si solar cell submodule with a size of 30 cm x 40 cm Wakisaka K, Sayama K, Tanaka M, Isomura M, Haku H, Kiyama S, Tsuda S
127 - 133	Low-cost amorphous silicon photovoltaic module encapsulated with liquid resin Kondo M, Takenaka A, Ishikawa A, Kurata S, Hayashi K, Nishio H, Nishimura K, Yamagishi H, Tawada T
135 - 142	Application of real-time spectroscopic ellipsometry for characterizing the structure and optical properties of microcrystalline component layers of amorphous semiconductor solar cells Koh J, Fujiwara H, Wronski CR, Collins RW
143 - 148	Optical confinement in high-efficiency a-Si solar cells with textured surfaces Hishikawa Y, Maruyama E, Yata S, Tanaka M, Kiyama S, Tsuda S
149 - 156	Light-induced changes in hydrogen-diluted a-Si:H materials and solar cells: A new perspective on self-consistent analysis Lee Y, Jiao L, Liu H, Lu Z, Collins RW, Wronski CR
157 - 162	Spectral characteristics of a-Si:H/c-Si heterostructures Gall S, Hirschauer R, Kolter M, Braunig D
163 - 169	Optimal optical design of thin-film photovoltaic devices Zhu FR, Jennings P, Cornish J, Hefter G, Luczak K
171 - 177	Microcrystalline silicon films and tandem solar cells prepared by triode PECVD Liao XB, Sheng SR, Yun F, Ma ZX, Kong GL, Zhao YW, He SQ, Li ZM
179 - 186	Experimental model and long-term prediction of photovoltaic conversion efficiency of a-Si solar cells Takahisa K, Kojima T, Nakamura K, Koyanagi T, Yanagisawa T
187 - 193	Photo atomic layer deposition of transparent conductive ZnO films Saito K, Watanabe Y, Takahashi K, Matsuzawa T, Sang BS, Konagai M
195 - 203	Novel light-trapping schemes involving planar junctions and diffuse rear reflectors for thin-film silicon-based solar cells Winz K, Fortmann CM, Eickhoff T, Beneking C, Wagner H, Fujiwara H, Shimizu I
205 - 212	15.1% Highly efficient thin film CdS/CdTe solar cell Kumazawa S, Shibutani S, Nishio T, Aramoto T, Higuchi H, Arita T, Hanafusa A, Omura K, Murozono M, Takakura H
213 - 218	Interfacial mixed-crystal layer in CdS/CdTe heterostructure elucidated by electroreflectance spectroscopy Toyama T, Yamamoto T, Okamoto H
219 - 225	Improved junction formation procedure for low temperature deposited CdS/CdTe solar cells Takamoto T, Agui T, Kurita H, Ohmori M
227 - 237	Prospects of wide-gap chalcopyrites for thin film photovoltaic modules Herberholz R, Nadenau V, Ruhle U, Koble C, Schock HW, Dimmler B
239 - 247	Sues on the chalcopyrite/defect-chalcopyrite junction model for high-efficiency Cu(In,Ga)Se-2 solar cells Contreras MA, Wiesner H, Tuttle J, Ramanathan K, Noufi R
249 - 260	Microstructural characterization of high-efficiency Cu(In,Ga)Se-2 solar cells Wada T
261 - 267	Improved compositional flexibility of Cu(In,Ga)Se-2-based thin film solar cells by sodium control technique Nakada T, Ohbo H, Fukuda M, Kunioka A
269 - 275	Improved performance of Cu(InGa)Se2 thin-film solar cells using evaporated Cd-free buffer layers Ohtake Y, Okamoto T, Yamada A, Konagai M, Saito K
277 - 283	Fabrication of graded band-gap Cu(InCa)Se2 thin-film mini-modules with a Zn(O,S,OH)(x) buffer layer Kushiya K, Tachiyuki M, Kase T, Sugiyama I, Nagoya Y, Okumura D, Sato M, Yamase O, Takeshita H
285 - 290	Improved Cu(In,Ga)(S,Se)(2) thin film solar cells by surface sulfurization Nakada T, Ohbo H, Watanabe T, Nakazawa H, Matsui M, Kunioka A
291 - 297	Large area ZnO films optimized for graded band-gap Cu(InGa)Se-2-based thin-film mini-modules Cooray NF, Kushiya K, Fujimaki A, Sugiyama I, Miura T, Okumura D, Sato M, Ooshita M, Yamase O
299 - 309	Determination of charge carrier collecting regions in chalcopyrite heterojunction solar cells by electron-beam-induced current measurements Scheer R, Wilhelm M, Lewerenz HJ, Schock HW, Stolt L
311 - 317	Examination of blocking current-voltage behaviour through defect chalcopyrite layer in ZnO/CdS/Cu(In,Ga)Se-2/Mo solar cell Topic M, Smole F, Furlan J
319 - 326	Effects of annealing on CuInSe2 films grown by molecular beam epitaxy Niki S, Kim I, Fons PJ, Shibata H, Yamada A, Oyanagi H, Kurafuji T, Chichibu S, Nakanishi H
327 - 335	Growth of CuInS2 films by rf ion plating and their characterization Kondo K, Nakamura S, Sano H, Hirasawa H, Sato K
337 - 342	Epitaxial n-Si/p-CuInS2 heterojunction devices Metzner H, Hahn T, Schmiga C, Bremer JH, Borchert D, Fahrner WR, Seibt M
343 - 348	CuInS2 thin-films solar cells fabricated by sulfurization of oxide precursors Negami T, Hashimoto Y, Nishitani M, Wada T
349 - 356	Properties of CuInS2 thin films grown by a two-step process without H2S Klenk R, Blieske U, Dieterle V, Ellmer K, Fiechter S, Hengel I, JagerWaldau A, Kampschulte T, Kaufmann C, Klaer J, LuxSteiner MC, Braunger D, Hariskos D, Ruckh M, Schock HW
357 - 363	The influence of sodium on the properties of CuInS2 thin films and solar cells Watanabe T, Nakazawa H, Matsui M, Ohbo H, Nakada T
365 - 374	Photovoltaic characteristics of CuInS2/CdS solar cell by electron beam evaporation Park GC, Chung HD, Kim CD, Park HR, Jeong WJ, Kim JU, Gu HB, Lee KS
375 - 381	Over 10% efficient CuInS2 solar cell by sulfurization Nakabayashi T, Miyazawa T, Hashimoto Y, Ito K
383 - 390	Effects of post-deposition treatment on the PL spectra and the hydrogen content of CuInS2 absorber layers Topper K, Krauser J, Bruns J, Scheer R, Weidinger A, Brauning D
391 - 397	Control of valence states by a codoping method in CuInS2 Yamamoto T, KatayamaYoshida H
399 - 405	Characterization of CuInS2 thin films prepared by sputtering from binary compounds Yamamoto Y, Yamaguchi T, Tanaka T, Tanahashi N, Yoshida A
407 - 414	Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of E-B evaporated precursors Katagiri H, Sasaguchi N, Hando S, Hoshino S, Ohashi J, Yokota T
415 - 421	Preparation of CuInS2 films with sufficient sulfur content and excellent morphology by one-step electrodeposition Nakamura S, Yamamoto A
423 - 430	Electrical properties of coevaporated CuInS2 thin films Scheer R, Alt M, Luck I, Lewerenz HJ