Thin Solid Films

Thin Solid Films, Vol.383, No.1-2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (84 articles)

1 - 6	Low temperature growth of microcrystalline silicon and its application to solar cells Kondo M, Matsuda A
7 - 10	Ultrathin mu c-Si films deposited by PECVD Rizzoli R, Summonte C, Pia J, Centurioni E, Ruani G, Desalvo A, Zignani F
11 - 14	Rapid deposition of hydrogenated microcrystalline silicon by a high current DC discharge Franz D, Grangeon F, Delachaux T, Howling AA, Hollenstein C, Karner J
15 - 18	Deposition rate optimization in SiH4/H-2 PECVD of hydrogenated microcrystalline silicon Amanatides E, Mataras D, Rapakoulias DE
19 - 24	Low temperature poly-Si TFT-LCD by excimer laser anneal Uchikoga S, Ibaraki N
25 - 30	Matrix addressing for organic electroluminescent displays Pribat D, Plais F
31 - 33	Pulsed KrF laser annealing of ZnS : Mn laterally emitting thin film electroluminescent displays Koutsogeorgis DC, Mastio EA, Cranton WM, Thomas CB
34 - 38	Metal-induced crystallization of amorphous silicon Yoon SY, Park SJ, Kim KH, Jang J
39 - 44	Advanced excimer laser crystallization techniques Mariucci L, Pecora A, Carluccio R, Fortunato G
45 - 47	A combined TEM and time-resolved optical reflectivity investigation into the excimer-laser crystallization of a-Si films Voogt FC, Ishihara R
48 - 52	Experimental and numerical analysis of surface melt dynamics in 200 ns-excimer laser crystallization of a-Si films on glass Fogarassy E, de Unamuno S, Prevot B, Harrer T, Maresch S
53 - 56	Transport mechanisms in hydrogenated microcrystalline silicon Brenot R, Vanderhaghen R, Drevillon B, Cabarrocas PRI, Rogel R, Mohammed-Brahim T
57 - 60	Electronic and topographic properties of amorphous and microcrystalline silicon thin films Kleider JP, Longeaud C, Bruggemann R, Houze F
61 - 64	The characterization of silicon nitride films by contactless transient photoconductivity measurements Kunst M, Abdallah O, Wunsch F
65 - 68	Influence of the transducer configuration on the p-i-n image sensor resolution Fernandes M, Vieira M, Martins J, Louro P, Macarico A, Schwarz R, Schubert M
69 - 72	Spectroscopic ellipsometry study of interfaces and crystallization behavior during annealing of a-Si : H films Losurdo M, Roca F, De Rosa R, Capezzuto P, Bruno G
73 - 77	Field emission from carbon nanotubes grown by layer-by-layer deposition method using plasma chemical vapor deposition Chung SJ, Lim SH, Jang J
78 - 80	Carbon nano-/micro-structures in field emission: environmental stability and field enhancement distribution Nilsson L, Groning O, Groning P, Kuttel O, Schlapbach L
81 - 88	Ultrathin carbon coatings for magnetic storage technology Robertson J
89 - 91	Low-voltage electron beam excitement luminescence of oxide thin films with multilayered structure Yamamoto H, Isogai H, Yoshida Y
92 - 94	Structural and electrical properties of ZnO films prepared by screen printing technique Ismail B, Abaab M, Rezig B
95 - 100	From polycrystalline to single crystalline silicon on glass Werner JH, Dassow R, Rinke TJ, Kohler JR, Bergmann RB
IX - IX	Proceedings of Symposium O on Thin Film Materials for Large Area Electronics of the E-MRS 2000 Spring Conference, Strasbourg, France, May 30-June 2, 2000 - Preface Equer B, Cabarrocas PRI
101 - 103	Room temperature electric field induced crystallization of wide band gap hydrogenated amorphous silicon Pelant I, Fojtik P, Luterova K, Kocka J, Knizek K, Stepanek J
104 - 106	Ion-beam stimulated solid-phase crystallization of amorphous Si on SiO2 Miyao M, Tsunoda I, Sadoh T, Kenjo A
107 - 109	Crystallization of silicon thin films by current-induced joule heating Sameshima T, Ozaki K
110 - 112	Grain populations in laser-crystallised silicon thin films on glass substrates Nerding M, Christiansen S, Krinke J, Dassow R, Kohler JR, Werner JH, Strunk HP
113 - 116	Structural improvement of SiGe films by C and F implantation and solid phase crystallization Rodriguez A, Olivares J, Sangrador J, Rodriguez T, Ballesteros C, Castro M, Gwilliam RM
117 - 121	Stability of plasma deposited thin film transistors -comparison of amorphous and microcrystalline silicon Wehrspohn RB, Deane SC, French ID, Powell MJ
122 - 124	Dynamics of metastable defects in a-Si : H/SiN TFTs Merticaru AR, Mouthaan AJ
125 - 128	Hot-wire amorphous silicon thin-film transistors on glass Stannowski B, Schropp REI
129 - 131	Silicon thin film solar cells deposited under 80 degrees C Ito M, Koch C, Svrcek V, Schubert MB, Werner JH
132 - 136	Requirements on amorphous semiconductors for medical X-ray detectors Hoheisel M, Batz L
137 - 142	Laser processing of amorphous silicon for large-area polysilicon imagers Boyce JB, Fulks RT, Ho J, Lau R, Lu JP, Mei P, Street RA, Van Schuylenbergh KF, Wang Y
143 - 146	High mobility thin film transistors by Nd : YVO4-laser crystallization Helen Y, Dassow R, Nerding M, Mourgues K, Raoult F, Kohler JR, Mohammed-Brahim T, Rogel R, Bonnaud O, Werner JH, Strunk HP
147 - 150	Low-frequency excess noise induced by hot-carrier injection in polysilicon thin-film transistors Bove A, Giovannini S, Valetta A, Mariucci L, Pecora A, Fortunato G
151 - 153	Hydrogenation in laser annealed polysilicon thin-film transistors (TFTs) Farmakis FV, Tsamados DM, Brini J, Kamarinos G, Dimitriadis CA, Miyasaka M
154 - 160	On the growth mechanism of a-Si : H Kessels WMM, Smets AHM, Marra DC, Aydil ES, Schram DC, van de Sanden MCM
161 - 164	Shedding light on the growth of amorphous, polymorphous, protocrystalline and microcrystalline silicon thin films Morral AFI, Cabarrocas PRI
165 - 168	Role of ion bombardment and plasma impedance on the performances presented by undoped a-Si : H films Martins R, Aguas H, Ferreira I, Silva V, Cabrita A, Fortunato E
169 - 171	Growth and characterization of SiC layers obtained by microwave-CVD Mandracci P, Ferrero S, Cicero G, Giorgis F, Pirri CF, Barucca G, Reitano R, Musumeci P, Calcagno L, Foti G
172 - 177	Low temperature growth of silicon nitride by electron cyclotron resonance plasma enhanced chemical vapour deposition Flewitt AJ, Dyson AP, Robertson J, Milne WI
178 - 180	Photoinduced effects in RF and VHF a-Si : H films deposited with different ion bombardment Abramov AS, Kosarev AI, Cabarrocas PRI, Shutov MV, Vinogradov AJ
181 - 184	Large area microcrystalline silicon films grown by ECR-CVD Ferrero S, Mandracci P, Cicero G, Giorgis F, Pirri CF, Barucca G
185 - 188	Correlation between a-Si : H surface oxidation process and the performance of MIS structures Aguas H, Nunes Y, Fortunato E, Gordo P, Maneira M, Martins R
189 - 191	Thin silicon films ranging from amorphous to nanocrystalline obtained by hot-wire CVD Soler D, Fonrodona M, Voz C, Bertomeu J, Andreu J
192 - 195	Hydrogenated amorphous silicon deposited by DC magnetron sputtering at high temperature Cherfi R, Farhi G, Aoucher M, Zellama K
196 - 199	Influence of the process parameters on the properties of hydrogenated amorphous carbon thin films deposited using ECR plasma Piazza F, Arnal Y, Grambole D, Herrmann F, Kildemo M, Lacoste A, Relihan G, Golanski A
200 - 202	Optical absorption and electrical conductivity measurements of microcrystalline silicon layers grown by SiF4/H-2 plasma on glass substrates Ambrico M, Schiavulli L, Ligonzo T, Cicala G, Capezzuto P, Bruno G
203 - 205	From amorphous to microcrystalline silicon deposition in SiF4-H-2-He plasmas: in situ control by optical emission spectroscopy Cicala G, Capezzuto P, Bruno G
206 - 208	Closed-chamber CVD - a new method for preparation of group-IV thin films for large area electronics Koynov S, Tzolov M, Brogueira P, Schwarz R
209 - 211	LPE growth of textured single crystal silicon thin film for PV applications Fave A, Berger S, Beaumont A, Semmache B, Kleimann P, Linnroos J, Laugier A
212 - 215	Physical properties of polycrystalline silicon films related to LPCVD conditions Modreanu M, Bercu M, Cobianu C
216 - 219	Plasma deposition of carbon films at room temperature from C2H2,-Ar mixtures: anodic vs. cathodic films Seth T, Cabarrocas PRI
220 - 223	Plasma oxidation of silicon using an electron cyclotron wave resonance (ECWR) oxygen plasma Lai DF, Robertson J, Milne WI
224 - 226	Vacuum arc deposition of protective layers on glass and polymer substrates Straumal BB, Vershinin NF, Cantarero-Saez A, Friesel M, Zieba P, Gust W
227 - 229	Metastable crystalline state induced in amorphous SiGe layers under cw visible laser illumination Martin E, Martin P, Olivares J, Rodriguez A, Sangrador J, Jimenez J, Rodriguez T
230 - 234	Multilayer structures induced by plasma and laser beam treatments on a-Si : H and a-SiC : H thin films Mitu B, Dinescu G, Dinescu M, Ferrari A, Balucani M, Lamedica G, Dementjev AP, Maslakov KI
235 - 240	In situ measurement of the crystallization of amorphous silicon in a vertical furnace using spectroscopic ellipsometry Petrik P, Lehnert W, Schneider C, Lohner T, Fried M, Gyulai J, Ryssel H
241 - 243	UV-assisted nickel-induced crystallization of amorphous silicon Khakifirooz A, Haji S, Mohajerzadeh SS
244 - 247	Influence of the process parameters on structural and electrical properties of r.f. magnetron sputtering ITO films Baia I, Fernandes B, Nunes P, Quintela M, Martins R
248 - 250	Free carrier optical absorption used to analyze the electrical properties of polycrystalline silicon films formed by plasma enhanced chemical vapor deposition Watanabe T, Sameshima T, Nakahata K, Kamiya T, Shimizu I
251 - 253	Photoelectrical properties of microcrystalline silicon films Forsh PA, Kazanskii AG, Mell H, Terukov EI
254 - 257	Microstructural and optical properties of as-deposited LPCVD silicon films Modreanu M, Tomozeiu N, Gartner M, Cosmin P
258 - 260	Optoelectronic studies in nanocrystalline silicon Schottky diodes obtained by hot-wire CVD Voz C, Soler D, Fonrodona M, Bertomeu J, Asensi JM, Andreau J
261 - 263	New feature of the photoconductivity in p-type a-Si : H: independence of photoconductivity of p-type a-Si : H films on doping level and defect concentration Kuznetsov SV
264 - 266	Hydrogen interaction on metal/hydrogenated amorphous silicon Schottky structures: adsorption/desorption effects Laihem K, Cherfi R, Aoucher M
267 - 270	Optical and electrical properties of silicon nanocrystals formed by CW laser irradiation of amorphous silicon oxides Rossi MC, Salvatori S, Burchielli M, Conte G
271 - 273	Detection of bottom depletion layer and its influence on surface photovoltage measurement in mu c-Si : H Svrcek V, Pelant I, Stuchlik J, Fejfar A, Kocka J
274 - 276	Recombination at high charge carrier concentrations in a-Si : H films Kunst M, Wunsch F, von Aichberger S
277 - 280	Influence of the post-treatment on the properties of ZnO thin films Nunes P, Fortunato E, Martins R
281 - 283	Dry etching characteristics of ITO thin films deposited on plastic substrates Lee YJ, Bae JW, Han HR, Kim JS, Yeom GY
284 - 286	ZnO thin films on semiconductor substrate for large area photodetector applications Purica M, Budianu E, Rusu E
287 - 291	Mo-capped Al-Nd alloy for both gate and data bus lines of liquid crystal displays Arai T, Makita A, Hiromasu Y, Takatsuji H
292 - 295	Thin film microfabrication of gold microelectrodes functionalized with thiacalix[4]arene layer: applications to copper ion sensor Ben Ali M, Lemiti M, Jaffrezic-Renault N, Martelet C, Chovelon JM, Ben Ouada H
296 - 298	Silicidation in chromium-amorphous silicon multilayer films Bouabellou A, Halimi R, Mirouh K, Labbani R, Djebien R, Mosser A
299 - 302	Stability of unhydrogenated polysilicon thin film transistors and structural quality of the channel material Toutah H, Tala-Ighil B, Llibre JF, Rahal A, Mourgues K, Helen Y, Brahim TM, Dassow R, Kohler JR
303 - 306	Grain boundary trap passivation in polysilicon thin film transistor investigated by low frequency noise Mercha A, Pichon L, Carin R, Mourgues K, Bonnaud O
307 - 309	Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition Dosev DK, Puigdollers J, Orpella A, Voz C, Fonrodona M, Soler D, Marsal LF, Pallares J, Bertomeu J, Andreu J, Alcubilla R
310 - 313	Production and characterization of large area flexible thin film position sensitive detectors Fortunato E, Brida D, Ferreira I, Aguas H, Nunes P, Martins R
314 - 317	Influence of the band offset on the performance of photodevices based on the c-Si/a-Si : H heterostructure Fantoni A, Vigranenko Y, Fernandes M, Schwarz R, Vieira M
318 - 320	Electronic properties of thin cuprous oxide sheet prepared by infrared light irradiation Suehiro T, Sasaki T, Hiratate Y
321 - 324	Manufacturing of surface micromachined structures for chemical sensors Moldovan C, Kim BH, Raible S, Moagar V
325 - 327	Porous silicon a transducer material for a high-sensitive (bio)chemical sensor: effect of a porosity, pores morphologies and a large surface area on a sensitivity Zairi S, Martelet C, Jaffrezic-Renault N, M'gaieth R, Maaref H, Lamartine R