Thin Solid Films

Thin Solid Films, Vol.515, No.22 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (44 articles)

8101 - 8101	Asia-Pacific conference on semiconducting silicides science and technology towards sustainable optoelectronics (APAC-SILICIDE 2006) July 29-31, 2006, Kyoto - Preface Maeda Y, Homewood KP, Sadoh T, Terai Y, Yamaguchi K, Akiyama K
8102 - 8108	Addressing materials and integration issues for NiSi silicide contact metallization in nano-scale CMOS devices Chi DZ, Lee RTP, Wong ASW
8109 - 8112	Interconnect and contact for nanoelectronics: Metallic TaSi2 nanowires Chou LJ, Chueh YL, Ko MT
8113 - 8117	Dislocation engineered silicon light emitting devices Lourenco MA, Milosavljevic M, Shao G, Gwilliam RM, Homewood KP
8118 - 8121	Semiconducting beta-FeSi2 towards optoelectronics and photonics Maeda Y
8122 - 8128	Structures and light emission properties of nanocrystalline FeSi2/Si formed by ion beam synthesis with a metal vapor vacuum arc ion source Wong SP, Chow CF, Roller J, Chong YT, Li Q, Lourenco MA, Homewood KP
8129 - 8132	Nondestructive investigation of beta-FeSi2/Si interface by photoluminescence measurements Terai Y, Maeda Y, Fujiwara Y
8133 - 8135	Photoluminescence enhancement by isolating beta-FeSi2 layers from defective layers Ando YI, Imai A, Akiyama K, Terai Y, Maeda Y
8136 - 8139	Investigation of current injection in beta-FeSi2/Si double-hetero structures light-emitting diodes by molecular beam epitaxy Ugajin Y, Sunohara T, Suemasu T
8140 - 8143	Nanoscale iron disilicides Chen LJ, Chen SY, Chen HC
8144 - 8148	beta-FeSi2 growth on Cu-mediated Si substrate and enhancement of photoluminescence Akiyama K, Itakura M, Kaneko S, Funakubo H, Maeda Y
8149 - 8153	Photoluminescence characterization of beta-FeSi2 prepared by ion beam sputter deposition (IBSD) method Zhuravlev A, Yamamoto H, Shimura K, Yamaguchi K, Shamoto S, Hojou K, Terai T
8154 - 8157	Optical constants of beta-FeSi2 thin film on Si(001) substrate obtained by simultaneous equations from reflectance and transmittance spectra Kakemoto H, Higuchi T, Shibata H, Wada S, Tsurumi T
8158 - 8161	Growth of SiOx nanofibers using FeSi and beta-FeSi2 substrates with Ga droplets Inaba T, Saito Y, Kominami H, Nakanishi Y, Murakami K, Matsuyama T, Tatsuoka H
8162 - 8165	Submicron dry-etching behavior of beta-FeSi2 thin films towards fabrication of photonic crystals Imai A, Kunimatsu S, Akiyama K, Terai Y, Maeda Y
8166 - 8168	Inductively coupled plasma-reactive ion etching for beta-FeSi2 film Wakayama T, Suemasu T, Yamazaki M, Kanazawa T, Akinaga H
8169 - 8174	Epitaxial orientation and morphology of beta-FeSi2 produced on a flat and a patterned Si(001) substrates Itakura M, Kishikawa N, Kawashita R, Kuwano N
8175 - 8178	Carrier control of beta-FeSi2 by 1.2 MeV-Au++ ion irradiation Jonishi T, Ando YI, Imai A, Maeda Y
8179 - 8188	Approaches to growth and study of properties of multilayer silicon-silicide hetero, structures with buried semiconductor silicide nanocrystallites Galkin NG
8189 - 8191	Crystallization of beta-FeSi2 droplets by room-temperature pulsed on silicon substrates laser deposition Ashitomi M, Katouf R, Kishi M, Shishido T, Sugawara H, Tsuchiya M
8192 - 8196	A study of the temperature dependence of adsorption and silicidation kinetics at the Mg/Si(111) interface Galkin KN, Kumar M, Govind, Shivaprasad SM, Korobtsov V, Galkin NG
8197 - 8200	Growth of beta-FeSi2 thin films on beta-FeSi2 (110) substrates by molecular beam epitaxy Muroga M, Suzuki H, Udono H, Kikuma I, Zhuravlev A, Yamaguchib K, Yamamoto H, Terai T
8201 - 8204	Structural property of beta-FeSi2 layers deposited on FeSi from a molten salt Ohishi T, Mishina A, Yamauchi I, Matsuyama T, Tatsuoka H
8205 - 8209	Facing target sputtered iron-silicide thin film Nakamura S, Aoki T, Kittaka T, Hakamata R, Tabuchi H, Kunitsugu S, Takarabe K
8210 - 8215	Toward the beta-FeSi2 p-n homo-junction structure Momose N, Shirai J, Tahara H, Todoroki Y, Hara T, Hashimoto Y
8216 - 8218	Effects of Sr addition on crystallinity and optical absorption edges in ternary semiconducting silicide Ba1-xSrxSi2 Morita K, Kobayashi M, Suemasu T
8219 - 8225	Consideration of the band-gap tunability of BaSi2 by alloying with Ca or Sr based on the electronic structure calculations Imai Y, Watanabe A
8226 - 8229	Preparation and electrical properties of Ca5Si3 and Sr5Si3 powders Inaba T, Kato A, Miura K, Akasaka M, Lida T, Momose Y, Tatsuoka H
8230 - 8236	Solid phase growth and properties of Mg2Si films on Si(111) Galkin NG, Vavanova SV, Masjov AM, Galkin KN, Gerasimenko AV, Kaidalova TA
8237 - 8241	Composition dependent thermoelectric properties of sintered Mg2Si1-xGex (x=0 to 1) initiated from a melt-grown polycrystalline source Akasaka M, Iida T, Nishio K, Takanashi Y
8242 - 8245	Growth and characterization of group-III impurity-doped semiconducting BaSi2 films grown by molecular beam epitaxy Kobayashi M, Morita K, Suemasu T
8246 - 8249	Chemical vapor deposition of NiSi using Ni(PF3)(4) and Si3H8 Ishikawa M, Muramoto I, Machida H, Imai S, Ogura A, Ohshita Y
8250 - 8253	Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe3Si on Si Ueda K, Kizuka R, Takeuchi H, Kenjo A, Sadoh T, Miyao M
8254 - 8258	Epitaxial growth of Fe3Si/CaF2/Fe3Si magnetic tunnel junction structures on CaF2/Si(111) by molecular beam epitaxy Kobayashi K, Suemasu T, Kuwano N, Hara D, Akinaga H
8259 - 8262	Growth of plate-type beta-FeSi2 single crystals by optimization of composition ratio of source materials Hara Y, Tobita M, Ohuchi S, Nakaoka K
8263 - 8267	Single crystalline beta-FeSi2 grown using high-purity FeSi2 source Gotoh K, Suzuki H, Udono H, Kikuma I, Esaka F, Uchikoshi M, Isshiki M
8268 - 8271	Preparation of beta-FeSi2 substrates by molten salt method Okubo M, Ohishi T, Mishina A, Yamauchi I, Udono H, Suemasu T, Matsuyama T, Tatsuoka H
8272 - 8276	Melt growth and characterization of Mg2Si bulk crystals Tamura D, Nagai R, Sugimoto K, Udono H, Kikuma I, Tajima H, Ohsugi IJ
8277 - 8280	Effect of oblique-angle deposition on early stage of Fe-Si growth Harada H, Jomori S, Suzuki M, Kinoshita K, Nakajima K, Kimura K
8281 - 8284	Subsurface structures in initial stage of FeSi2 growth studied by high-resolution Rutherford backscattering spectroscopy Suzuki M, Kinoshita K, Jomori S, Harada H, Nakajima K, Kimura K
8285 - 8289	Investigations of surface structure for thermally evaporated silicon on a Cu(111) surface Tsay JS, Yang AB, Wu CN, Shiu FS
8290 - 8292	The behavior of Co atoms on Si(111)-7x7 surfaces at low temperatures Fu TY, Kuo CY, Tsay SL
8293 - 8296	The direct influence of Fe 3d orbitals on EFG of beta-FeSi2 Kondo S, Hasaka M, Morimura T
8297 - 8300	Fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam method Xu XS, Chen HD, Xiong ZG, Jin AZ, Gu CZ, Cheng BY, Zhang DZ