Journal of Crystal Growth

Journal of Crystal Growth, Vol.220, No.1-2 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (28 articles)

1 - 5	Growth and characterization of shaped GaSb crystals Nicoara I, Nicoara D, Ostrogorsky AG, Marin C, Peignier T
6 - 15	Optimal temperature profiles for annealing of GaAs-crystals Metzger M, Backofen R
16 - 22	1.35 mu m photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)(1)/(GaAs)(1) monolayer deposition Wang XD, Niu ZC, Feng SL, Miao ZH
23 - 29	Study of molecular-beam epitaxy growth on patterned GaAs (311)A substrates with different mesa height Gong Q, Notzel R, Schonherr HP, Ploog KH
30 - 38	Photoluminescence study of a bulk vapour grown CdTe crystal Halliday DP, Potter MDG, Mullins JT, Brinkman AW
39 - 45	Indium inhomogeneity in InxGa1-xSb ternary crystals grown by floating crucible Czochralski method Kozhemyakin GN
46 - 50	Be diffusion in InGaAs/InP heterostructures grown by gas source molecular beam epitaxy Koumetz S, Ketata K, Ihaddadene M, Joubert E, Ketata M, Dubois C
51 - 55	Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots Liu BL, Xu ZY, Liu HY, Wang ZG
56 - 61	Growth behavior of GaAs/AlGaAs multi-layers grown on U-grooved GaAs fusion layer on InP substrate Hwang SM, Park YJ, Nah J, Kim EK, Choi IH
62 - 67	Electronic characteristics of Au/AlxGa1-xN structures grown with various x values Lee CR
68 - 74	Atomic layer-by-layer growth of superconducting Bi-Sr-Ca-Cu-O thin films by molecular beam epitaxy Bove P, Rogers DJ, Teherani FH
75 - 81	Liquid-phase epitaxy on 6H-SiC Acheson seed crystals in closed vessel Khan MN, Nishizawa S, Bahng W, Arai K
82 - 87	Growth of highly (100)-oriented Zr-rich PZT thin films on Pt/Ti/SiO2/Si substrates by a simple sol-gel process Fu XR, Li JH, Song ZT, Lin CL
88 - 95	Highly oriented POPOP films grown on the KCl(001) surface Smilgies DM, Boudet N, Struth B, Yamada Y, Yanagi H
96 - 99	Preparing (111)-oriented C-60 crystalline films on NaCl substrate Xu WT
100 - 104	Growth of (100)-oriented LaNiO3 thin films directly on Si substrates by a simple metalorganic decomposition technique for the highly oriented PZT thin films Meng XJ, Cheng JG, Sun JL, Ye HJ, Guo SL, Chu JH
105 - 113	Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition Aarik J, Aidla A, Mandar H, Sammelselg V, Uustare T
114 - 120	Thermal, spectroscopic properties and laser performance at 1.06 and 1.33 mu m of Nd : Ca4YO(BO3)(3) and Nd : Ca4GdO(BO3)(3) crystals Wang CQ, Zhang HJ, Meng XL, Zhu L, Chow YT, Liu XS, Cheng RP, Yang ZH, Zhang SJ, Sun LK
121 - 125	Preparation, growth, and characterisation of Nd3+-doped calcium lithium niobium gallium garnet (Nd3+: CLNGG) single crystals Gheorghe L, Petrache M, Lupei V
126 - 129	Compositional plane of a new quaternary solid solution semiconductor Pb1-x(Mg1-ySry)(x)S for mid-infrared lasers Abe S, Masumoto K
130 - 134	Crystallization simulation in macromolecular crystals Rodriguez CF, Rodriguez FF, Morales SA, Genicio RM
135 - 139	Effect of lead(II) impurity on the growth of sodium chloride crystals Kubota N, Otosaka H, Doki N, Yokota M, Sato A
140 - 149	Growth of zeolites A and X in low earth orbit Warzywoda J, Bac N, Jansen JC, Sacco A
150 - 160	Characterization of zeolites A and X grown in low earth orbit Warzywoda J, Valcheva-Traykova M, Rossetti GA, Bac N, Joesten R, Suib SL, Sacco A
161 - 165	Crystal morphologies and melting curves of CCl4 at pressures up to 330 MPa Maruyama M, Kawabata K, Kuribayashi N
166 - 175	Analysis of the unsteady segregation in crystal growth from a melt -Part II: Fluctuating convection velocity Haddad FZ, Garandet JP, Henry D, Ben Hadid H
176 - 179	Thermal contraction behavior in Al-2(WO4)(3) single crystal Imanaka N, Hiraiwa M, Adachi G, Dabkowska H, Dabkowski A
180 - 184	Massive CO2 clathrate hydrate growth at a high-polar-energy surface Tabe Y, Hirai S, Okazaki K