Applied Surface Science

Applied Surface Science, Vol.166, No.1-4 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (99 articles)

1 - 11	Photoemission studies of barrier heights in metal-semiconductor interfaces and heterojunctions Horn K
12 - 16	Photoemission investigation of MBE-grown HgSe/CdSe heterostructures Eich D, Hubner D, Ortner K, Kilian L, Becker R, Landwehr G, Fink R, Umbach E
17 - 22	Tracing the valence band maximum during epitaxial growth of HfS2 on WSe2 Kreis C, Traving M, Adelung R, Kipp L, Skibowski M
23 - 29	Polarization fields in nitride nanostructures: 10 points to think about Bernardini F, Fiorentini V
30 - 34	Electric field effects in ZnSe/BeTe superlattices Wagner V, Becker M, Weber M, Korn M, Keim M, Waag A, Geurts J
35 - 39	Absorption and emission spectra of InAs/Ga1-xInxSb/AlSb nanostructures for infrared applications Kitchin MR, Shaw MJ, Corbin E, Hagon JP, Jaros M
40 - 44	Spin-polarized electron transport and emission from strained superlattices Ambrajei AN, Clendenin JE, Egorov AY, Mamaev YA, Maruyama T, Mulhollan GA, Subashiev AV, Yashin YP, Ustinov VM, Zhukov AE
45 - 50	Electron correlation effects at semiconductor interfaces: a comparison of the Si(111)-3 X 3 and the Sn/Ge(111)-3 X 3 reconstructions Perez R, Ortega J, Flores F
51 - 56	Si-TiO2 interface evolution at prolonged annealing in low vacuum or N2O ambient Erkov VG, Devyatova SF, Molodstova EL, Malsteva TV, Yanovskii UA
57 - 60	Stress relaxation by generation of L-shape misfit dislocations in (001) heterostructures with diamond and sphalerite lattices Kolesnikov AV, Vasilenko AP, Trukhanov EM, Gutakovsky AK
61 - 66	Low-energy argon ion beam treatment of a-Si : H/Si structure Pincik E, Jergel M, Gmucova K, Gleskova H, Kucera M, Mullerova J, Brunel M, Mikula M
67 - 71	On light-related electrical properties of porous silicon/crystalline silicon structure Pincik E, Bartos J, Jergel M, Falcony C, Bartos P
72 - 76	Influence of the plasma pretreatment of GaAs(100) and Si(100) surfaces on the optical and structural properties of Si3N4/GaAs and a-SiGe/Si interfaces Pincik E, Jergel M, Kucera M, van Swaaij RACMM, Ivanco J, Senderak R, Zeman M, Mullerova J, Brunel M
77 - 81	Optical properties of as grown and ion implanted (Ar+,N-2(+),alpha) GaAs nipi doping superlattices Kunert HW, Malherbe JB, Brink DJ, Odendaal RQ, Prinsloo LC, Camassel J, Allegre J, Zeaiter K, Llinares C
82 - 86	Investigation of the atomic crystal plane relief by X-ray epitaxial film interferometer Kolesnikov AV, Vasilenko AP, Trukhanov EM, Sokolov LV, Fedorov AA, Pchelyakov OP, Romanov SI
87 - 91	Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties Mamutin VV, Shubina TV, Vekshin VA, Ratnikov VV, Toropov AA, Ivanov SV, Karlsteen M, Sodervall U, Willander M
92 - 96	Unpinning of Fermi level in nanometer-sized Schottky contacts on GaAs and InP Hasegawa H, Sato T, Kasai S
97 - 102	Formation, geometric and electronic properties of microrelief Au-GaAs interfaces Dmitruk NL, Mamykin SV, Rengevych OV
103 - 107	Electronic surface structure of CoSi2(111)/Si(111): implications for ballistic electron-emission microscopy currents Reuter K, de Andres PL, Garcia-Vidal FJ, Flores F, Heinz K
108 - 112	Ballistic-electron emission microscopy and internal photoemission in Au/Si-structures - a comparison Blauarmel A, Brauer M, Hoffmann V, Schmidt M
113 - 118	Electronic structure, conductivity and carrier mobility in very thin epitaxial CrSi(111) layers with Si(111) root 3 X root 3/30 LEED pattern Galkin NG, Konchenko AV, Goroshko DL, Maslov AM, Vavanova SV, Kosikov SI
119 - 124	Interfacial reaction of erbium on homoepitaxial diamond (100) films Saby C, Tan TAN, Pruvost F, Muret P
125 - 129	Formation of the Co/Si(111)7 X 7 interface: AES- and EELS-study Plusnin NI, Milenin AP, Prihod'ko DP
130 - 136	Relaxation processes in Au-TiB2/GaAs structures under short-term thermal annealing Kryshtab TG, Lytvyn OS, Lytvyn PM, Prokopenko IV
137 - 142	Structure of Fe layers grown on InAs(100) Teodorescu CM, Chevrier F, Richter C, Ilakovac V, Heckmann O, Lechevalier L, Brochier R, Johnson RL, Hricovini K
143 - 148	Study of Fe deposition upon a layered compound: GaSe Zerrouki M, Lacharme JP, Ghamnia M, Sebenne CA, Eddrief M, Abidri B
149 - 153	Initial processes of a Ni adatom on the Si(001) surface: a first-principles study Higai S, Ohno T
154 - 159	Structure and magnetic properties of electrodeposited Co films onto Si(100) Cerisier M, Attenborough K, Celis JP, Van Haesendonck C
160 - 164	Thin Ag film formation onto Si/SiO2 substrate Iida S, Okui T, Tai T, Akao S
165 - 172	Reconstructions of GaN and InGaN surfaces Feenstra RM, Chen HJ, Ramachandran V, Smith AR, Greve DW
173 - 178	The morphology of high-index GaAs surfaces Jacobi K, Geelhaar L, Marquez J, Platen J, Setzer C
179 - 184	(001) Surfaces of GaP and InP: structural motifs, electronic states and optical signatures Schmidt WG, Bernholc J, Bechstedt F
185 - 189	Raman spectroscopy of surface phonons on Sb-terminated Si(001) Hinrichs K, Power JR, Esser N, Richter W
190 - 195	Atomic structure and composition of the P-rich InP(001) surfaces Vogt P, Frisch AM, Hannappel T, Visbeck S, Willig F, Jung C, Follath R, Braun W, Richter W, Esser N
196 - 200	X-ray standing wave study of wet-etch sulphur-treated InP(100) surfaces McGovern IT, Koebbel A, Leslie A, Dudzik E, Mitchell CEJ, McLean AB, Patchett A, Zahn DRT, Evans DA, Woodruff DP, Cowie BCC
201 - 208	Atomic and electronic structure of epitaxial PbS on InP(110) and InP(001) Preobrajenski AB, Chasse T
209 - 213	Surface structure and local bonding on the Si(111)-Ce surface Rad MG, Gothelid M, Hirschauer B, Karlsson UO
214 - 219	Temperature effect on the reconstruction of Sb/Si(001) interface studied by high resolution core level spectroscopy and RHEED analysis De Padova P, Larciprete R, Quaresima C, Reginelli A, Perfetti P
220 - 223	Scanning tunneling microscopy evidence of background contamination-induced 2 X 1 ordering of the beta-SiC(100) c(4 X 2) surface Douillard L, Fauchoux O, Aristov V, Soukiassian P
224 - 230	Angle resolved photoemission spectroscopy of the InP(001) surface Frisch AM, Vogt P, Visbeck S, Hannappel T, Willig F, Braun W, Richter W, Bernholc J, Schmidt WG, Esser N
231 - 236	Photoemission study of Gd atoms on CdTe(100) surface Guziewicz E, Szamota-Sadowska K, Kowalski BJ, Orlowski BA, Ghijsen J, Johnson RL
237 - 241	Oxide formation on the CdTe(111) A (1 X 1) surface Kowalski BJ, Orlowski BA, Ghijsen J
242 - 246	Surface morphologies of III-V based magnetic semiconductor (Ga,Mn) As grown by molecular beam epitaxy Yang JR, Yasuda H, Wang SL, Matsukura F, Ohno Y, Ohno H
247 - 252	Surface morphology of MnAs overlayers grown by MBE on GaAs(111)B substrates Sadowski J, Kanski J, Ilver L, Johansson J
253 - 258	Atomic hydrogen cleaning, nitriding and annealing InSb (100) Haworth L, Lu J, Westwood DI, MacDonald JE
259 - 262	Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9 layers on GaAs Zsebok O, Thordson JV, Ilver L, Sodervall U, Andersson TG
263 - 267	Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces Aristov VY, Zhilin VM, Grupp C, Taleb-Ibrahimi A, Kim HJ, Mangat PS, Soukiassian P, Le Lay G
268 - 272	Si surface band-gap shift on top of buried Ge quantum dots Klemenc M, Meyer T, von Kanel H
273 - 277	Simulation of excitonic spectra in electric field to characterize the quality of low dimensional structures Lazarenkova OL, Pikhtin AN
278 - 283	Excitons as a probe of interface morphology in Cd(Zn) Se/ZnSe heterostructures Toropov AA, Shubina TV, Sorokin SV, Kyutt RN, Ivanov SV, Pozina GR, Bergman JP, Monemar B, Karlsteen M, Willander M
284 - 289	Characterization of surface nanostructures by STM light emission: individual GaAs/AlGaAs quantum wells Ushioda S, Tsuruoka T, Ohizumi Y
290 - 294	Strain mapping of V-groove InGaAs/GaAs strained quantum wires using cross-sectional Atomic Force Microscopy Lelarge F, Priester C, Constantin C, Rudra A, Leifer K, Kapon E
295 - 299	STM study of the charged defects on the Ge(111)-c(2 x 8) surface and the effect of density of states on defect-induced perturbation Lee G, Mai H, Chizhov I, Willis RF
300 - 303	Misfit dislocations and radiative efficiency of InxGa1-xN/GaN quantum wells Rebane YT, Shreter YG, Wang WN
304 - 308	Raman and photoluminescence spectroscopy from as grown and 147 keV Ar+-ion implanted AlxGa1-xAs/GaAs quantum wells Kunert HW
309 - 312	Direct observation of interface effects of thin AlAs(100) layers buried in GaAs Agui A, Sathe C, Guo JH, Nordgren J, Mankefors S, Nilsson PO, Kanski J, Andersson TG, Karlsson K
313 - 316	Electronic structure of ultrathin AlAs(100) layers buried in GaAs Mankefors S
317 - 321	Nanocrystals at MBE-grown GaN/GaAs(001) interfaces Zsebok O, Thordson JV, Ilver L, Andersson TG
322 - 325	Formation of self-organized CdSe quantum dots on ZnSe(100) surfaces by molecular beam epitaxy Maehashi K, Yasui N, Murase Y, Shikimi A, Nakashima H
326 - 331	Strained InAs nanostructures self-organised on high-index InP(113)B Brault J, Gendry M, Grenet G, Solere A, Phaner-Goutorbe M, Robach Y, Porte L, Hollinger G
332 - 335	Formation and stability of II-VI self-assembled quantum dots revealed by in situ atomic force microscopy Kratzert PR, Rabe M, Henneberger F
336 - 340	Smooth interface effects on the confinement properties of GaSb/AlxGa1-xSb quantum wells Adib AB, de Sousa JS, Farias GA, Freire VN
341 - 345	Spatial distribution of Cd in CdSe/ZnSe superlattices studied by X-ray diffraction Kyutt RN, Toropov AA, Shubina TV, Sorokin SV, Ivanov SV, Karlsteen M, Willander M
346 - 348	The peculiarity of ultra cold neutrons scattering on the superlattice of non-equilibrium magnetization in ferromagnetic semiconductors Semchuk OY
349 - 353	Effect of adsorption and desorption processes on photoluminescence excitation spectra of porous silicon Korsunskaya NE, Kaganovich EB, Khomenkova LY, Bulakh BM, Dzhumaev BR, Beketov GV, Manoilov EG
354 - 362	Organic semiconductor interfaces: electronic structure and transport properties Hill IG, Milliron D, Schwartz J, Kahn A
363 - 369	Substrate influence on the ordering of organic submonolayers: a comparative study of PTCDA on Ag(110) and Ag(111) using HREELS Tautz FS, Sloboshanin S, Shklover V, Scholz R, Sokolowski M, Schaefer JA, Umbach E
370 - 375	First-principle analysis of the dissociative adsorption of formic acid on rutile TiO2(110) Kackell P, Terakura K
376 - 379	The interface formation of PTCDA on Se-modified GaAs(100) surfaces Park S, Querner T, Kampen TU, Braun W, Zahn DRT
380 - 386	An experimental study of poly(9,9-dioctyl-fluorene) and its interface with Li and LiF. Greczynski G, Fahlman M, Salaneck WR
387 - 391	Optical characterisation of PTCDA films grown on passivated semiconductor substrates Kampen TU, Salvan G, Friedrich M, Tenne DA, Park S, Zahn DRT
392 - 398	The status and promise of compliant substrate technology Brown AS, Doolittle WA
399 - 405	Initial stage of the Bi surfactant-mediated growth of Ge on Si(111): a structural study Schmidt T, Falta J, Materlik G
406 - 412	Patterned growth on high-index GaAs (311) A substrates Notzel R, Ploog KH
413 - 417	Arsenic flux dependence of InAs nanostructure formation on GaAs (211) B surface Yasuda H, Matsukura F, Ohno Y, Ohno H
418 - 422	Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100) Haworth L, Lu J, Westwood DI, Macdonald JE
423 - 427	Influence of N/Ga-flux ratio on optical properties and surface morphology of GaN grown on sapphire(0001) by MBE Zsebok O, Thordson JV, Zhao QX, Andersson TG
428 - 432	Surface crystallization of ion-implantation damaged Si95Ge5 on Si(100) Peto G, Horvath ZE, Kanski J
433 - 436	Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth Pristovsek M, Menhal H, Zettler JT, Richter W
437 - 441	Van der Waals-xenotaxy: growth of GaSe(0001) on low index silicon surfaces Rudolph R, Pettenkofer C, Klein A, Jaegermann W
442 - 445	Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps Cordier Y, Ferre D, Chauveau JM, Dipersio J
446 - 450	Strained layer growth of Ga1-xInxP on GaAs (100) and GaP (100) substrates Wallart X, Mollot F
451 - 454	Formation energy of threefold coordinated oxygen in SiO2 systems Pasquarello A
455 - 459	Atomic structure of SiO2 at SiO2/Si interfaces Hirose K, Nohira H, Sakano K, Hattori T
460 - 464	Detection of interface states correlated with SiO2/Si(111) interface structures Watanabe N, Teramoto Y, Omura A, Nohira H, Hattori T
465 - 468	The growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on silicon Lu HC, Gusev E, Yasuda N, Green M, Alers G, Garfunkel E, Gustafsson T
469 - 474	Strong exciton energy blue shift in annealed Si/SiO2 single quantum wells de Sousa JS, Wang H, Farias GA, Freire VN, da Silva EF
475 - 479	Defect structure relaxation process in the Si-SiO2 system Kropman D, Abru U, Karner T
480 - 484	The Auger transistor based on the Al-SiO2-n-Si heterostructure Ostroumova EV, Rogachev AA
485 - 491	Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO2 interfaces Niimi H, Yang HY, Lucovsky G, Keister JW, Rowe JE
492 - 496	Influence of tetraethylammonium bromide on phase inhomogeneity of disperse vanadium dioxide particles in matrix of polyethylene glycol Turov VV, Gorbik PP, Ogenko VM, Chulga OV, Semchuk OY, Chuiko AA, Karlsteen M
497 - 503	Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces Lucovsky G, Phillips JC
504 - 507	Characterisation of the BaTiO3/p-Si interface and applications Evangelou EK, Konofaos N, Craven MR, Cranton WM, Thomas CB
508 - 512	Fermi level-dependent defect formation at Cu(In,Ga) Se-2 interfaces Klein A, Fritsche J, Jaegermann W, Schon JH, Kloc C, Bucher E
513 - 519	Charge redistribution at GaN-Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces Therrien R, Lucovsky G, Davis R
520 - 525	On the nature of transition layer and heat tolerance of TiBx/GaAs-based contacts Dmitruk NL, Ermolovich IB, Konakova RV, Lytvyn OS, Lytvyn PM, Milenin VV, Prokopenko IV, Venger EF, Voitsikhovskyi DI, Boltovets NS, Ivanov VN
526 - 531	In situ UHV contactless C-V and XPS characterization of surface passivation process for InP using a partially nitrided Si interface control layer Takahashi H, Hasegawa H
532 - 537	p-n junction formed in structures with macro-porous silicon Grigoras K, Jasutis V, Pacebutas V, Sabataityte J, Simkiene I
XIII - XIII	Special issue: Proceedings of the Seventh International Conference on the Formation of Semiconductor Interfaces, Goteborg, Sweden, June 21-25, 1999 - Preface Kanski J, Nilsson PO