1 - 1 |
The 12th International conference on Solid Films and Surfaces (ICSFS-12) - Preface Temmyo J, Tabe M, Nakanishi Y, Fukuda Y |
2 - 7 |
Hydrogen and helium interactions in Si: phenomena obscure and not-so-obscure Ashok S |
8 - 11 |
A new crystallization technique of Si films on glass substrate using thermal plasma jet Kaku H, Higashi S, Taniguchi H, Murakami H, Miyazaki S |
12 - 15 |
Formation of microcrystalline germanium (mu c-Ge : H) films from inductively coupled plasma CVD Okamoto Y, Makihara K, Higashi S, Miyazaki S |
16 - 20 |
Crystallization process of high-k gate dielectrics studied by surface X-ray diffraction Terasawa N, Akimoto K, Mizuno Y, Ichimiya A, Sumitani K, Takahashi T, Zhang XW, Sugiyama H, Kawata H, Nabatame T, Toriumi A |
21 - 25 |
Influence of thickness of Hf buffer layer on the interfacial structures of sputtered HfO2 on SiO2/Si Tan RQ, Azuma Y, Kojima I |
26 - 29 |
Enhancement of donor ionization in phosphorus-doped n-diamond Koide Y |
30 - 33 |
Tight-binding quantum chemical molecular dynamics simulation of boron activation process in crystalline silicon Masuda T, Sasata K, Elanany M, Koyama M, Kubo M, Miyamoto A |
34 - 38 |
Tight-binding quantum chemical molecular dynamics simulation of mechano-chemical reactions during chemical-mechanical polishing process of SiO2 surface by CeO2 particle Rajendran A, Takahashi Y, Koyama M, Kubo M, Miyamoto A |
39 - 42 |
Influence of substrate do bias on crystallinity of silicon films grown at a high rate from inductively-coupled plasma CVD Kosku N, Murakami H, Higashi S, Miyazaki S |
43 - 46 |
Thermal redistribution of hydrogen and boron in SiO2 in SiN-capped p-type MOSFET structures Kawashima Y, Aoyagi S, Kudo M |
47 - 50 |
Electrical and mechanical properties of surfactant-templated mesoporous silica thin films using Brij-76 surfactant Jung SB, Han CK, Park HH |
51 - 54 |
Evidence of refractive index change in glass substrates induced by high-density reactive ion plating deposition of SiO2 films Mistrik J, Ohlidal I, Antos R, Aoyama M, Yamaguchi T |
55 - 60 |
Strain relaxation near high-k/Si interface by post-deposition annealing Emoto T, Akimoto K, Yoshida Y, Ichimiya A, Nabatame T, Toriumi A |
61 - 64 |
Diffusion of Li in the silicon oxide films and evaluation of Li-induced surface potential Maeda M, Watanabe T, Imai Y, Ishikawa Y, Tabe M |
65 - 70 |
Surface elemental segregation and the Stranski-Krastanow epitaxial islanding transition Cullis AG, Norris DJ, Migliorato MA, Hopkinson M |
71 - 74 |
Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation Shiozaki N, Anantathanasarn S, Sato T, Hashizume T, Hasegawa H |
75 - 78 |
Control of the nucleation density of Si quantum dots by remote hydrogen plasma treatment Makihara K, Deki H, Murakami H, Higashi S, Miyazaki S |
79 - 83 |
Optical effects in silica glass implantation of 60 keV Cu- during ions Plaksin OA, Takeda Y, Kono K, Amekura H, Umeda N, Kishimoto N |
84 - 87 |
Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates Oikawa T, Ishikawa F, Sato T, Hashizume T, Hasegawa H |
88 - 91 |
Control of photoluminescence wavelength from uniform InAs quantum dots by annealing Kobayashi Y, Yamaguchi K |
92 - 95 |
Changes in the electronic energy structure of CdSe nanocrystals of close-packed array by in situ anneal Choi HJ, Yang JK, Yoon S, Park HH |
96 - 100 |
Growth of ZnS nanocombs with ZnO sheath by thermal evaporation Lu MY, Su PY, Chueh YL, Chen LJ, Chou LJ |
101 - 106 |
Growth of In2O3 nanocrystal chains by a vapor transport and condensation method Hsin CL, He JH, Chen LJ |
107 - 110 |
Nano-scale Cu metal patterning by using an atomic force microscope Tomita Y, Hasegawa Y, Kobayashi K |
111 - 114 |
Characterization of amorphous carbon film-coated nanotubes as electron field emission material Nagatsu M, Yoshida T, Kurita S, Murakami K |
115 - 119 |
Vacancy ordering in self-assembled erbium silicide nanowires on atomically clean Si(001) Tsai WC, Hsu HC, Hsu HF, Chen LJ |
120 - 123 |
2D lattice formation by YAG : Nd laser on the surface of Ge single crystal Medvid A, Fukuda Y, Michko A, Onufrievs P, Anma Y |
124 - 128 |
Carbon nanotube adsorbed on hydrogenated Si(001) surfaces Miwa RH, Orellana W, Fazzio A |
129 - 136 |
Atomic-scale theoretical investigations of compound semiconductor surfaces Srivastava GP |
137 - 140 |
Sb adsorption onto In nanocluster array structure formed on a Si(111)-(7 x 7) Saito M, Takeuchi C, Mori M, Tambo T, Tatsuyama C |
141 - 144 |
Inclined N-2 desorption in N2O decomposition on Rh(110) Matsushima T, Imamura K, Horino H, Hiratsuka A, Ma YS, Rzeznicka II, Nakagoe O |
145 - 148 |
Reflection high-energy positron diffraction study of a Si(001) surface Hayashi K, Fukaya Y, Kawasuso A, Ichimiya A |
149 - 152 |
Positron diffraction study of SiC(0001) surface Kawasuso A, Maekawa M, Yoshikawa M, Ichimiya A |
153 - 156 |
Surface structure and electronic states of sulfur-treated InP(111)A studied by LEED, AES, STM, and IPES Shimomura M, Sano Y, Sanada N, Cao LL, Fukuda Y |
157 - 160 |
The geometry of Bi nanolines on Si(001) Miwa RH, MacLeod JM, Srivastava GP, McLean AB |
161 - 165 |
STM observation of Bi line structures on the Si(100) surface with Ag deposition Itoh T, Kashirajima S, Naitoh M, Nishigaki S, Shoji F |
166 - 169 |
Observation of Si(111)-root 3 x root 3-Ag surface at room temperature by reflection high-energy positron diffraction Fukaya Y, Kawasuso A, Hayashi K, Ichimiya A |
170 - 173 |
An empirical potential approach to structural stability of GaNxAs1-x thin films on GaAS(111) Ito T, Suda T, Akiyama T, Nakamura K |
174 - 177 |
Photoemission spectroscopy study of the oxidation of HfC(100) Edamoto K, Shirotori Y, Sato T, Ozawa K |
178 - 181 |
An ab initio-based approach to Ga adatom migration on GaAs(n 1 1)A-(001) non-planar surfaces Ito T, Asano K, Akiyama T, Nakamura K, Shiraishi K, Taguchi A |
182 - 185 |
An empirical potential approach to dislocation formation and structural stability in GaNxAs1-x Kawamoto K, Suda T, Akiyama T, Nakamura K, Ito T |
186 - 189 |
Theoretical investigation of phase transition on GaAs(001)-c(4 x 4) surface Ishizaki H, Akiyama T, Nakamura K, Shiraishi K, Taguchi A, Ito T |
190 - 194 |
Theoretical study on hydrogen reaction processes on H/Si(001) surface Takahashi N, Nara J, Uda T, Nakamura Y, Tateyama Y, Ohno T |
195 - 198 |
Theoretical study on the electronic and molecular properties of ground and excited states of ethylenedioxythiophene and styrenesulphonic acid Agalya G, Lv C, Wang XJ, Koyama M, Kubo M, Miyamoto A |
199 - 202 |
Measurements of critical micelle concentration (CMC) using optical fiber covered with porous sol-gel cladding Isobe H, Singh CD, Katsumata H, Suzuki H, Fujinami T, Ogita M |
203 - 208 |
Formation of pores in Ge single crystal by laser radiation Medvid A, Mychko A, Krivich A, Onufrijevs P |
209 - 212 |
Obliquely deposited metal films for polarizers Takeda Y, Takeuchi N, Fukano T, Motohiro T |
213 - 216 |
Modelling of columnar growth in continuum ballistic deposition Enomoto Y, Taguchi M |
217 - 220 |
Preparation and characterization of Rhodamine B and Alq3 thin films deposited by solution jet beam method Okabayashi Y, Mitarai T, Yamazaki S, Matsuyama R, Kanai K, Ouchi Y, Seki K |
221 - 224 |
Spectroscopic ellipsometry on sinusoidal surface-relief gratings Antos R, Ohlidal I, Franta D, Klapetek P, Mistrik J, Yamaguchi T, Visnovsky S |
225 - 229 |
Spectroscopic ellipsometry on lamellar gratings Antos R, Ohlidal I, Mistrik J, Murakami K, Yamaguchi T, Pistora J, Horie M, Visnovsky S |
230 - 234 |
Depth profiling of the strain distribution in the surface layer using X-ray diffraction at small glancing angle of incidence Fujii Y, Yanase E, Arai K |
235 - 239 |
Determination of interface roughness of Gd films deposited on Si surface using improved wavelet transform of X-ray reflectivity data Starykov O, Sakurai K |
240 - 243 |
Preparation of pure boron coating film and its characterization by XPS and TDS Oyaidzu M, Yoshikawa A, Kodama H, Oya Y, Sagara A, Noda N, Okuno K |
244 - 247 |
Influence of reacting nitrogen gas consistence on the properties of TiN films prepared by rf. magnetron sputtering Pihosh Y, Goto M, Kasahara A, Oishi T, Tosa M |
248 - 251 |
Microstructures and mechanical properties evaluation of hard chromized austenitic Fe-Mn-Al alloys Lee JW |
252 - 256 |
Corrosion and cell adhesion behavior of TiN-coated and ion-nitrided titanium for dental applications Huang HH, Hsu CH, Pan SJ, He JL, Chen CC, Lee TL |
257 - 263 |
Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces Brillson LJ, Bradley ST, Tumakha SH, Goss SH, Sun XLL, Okojie RS, Hwang J, Schaff WJ |
264 - 268 |
Characterisation of amorphous GaN films Metson JB, Ruck BJ, Budde F, Trodahl HJ, Bittar A, Prince KE |
269 - 272 |
Effect of treatments of sapphire substrate on growth of GaN film Sumiya M, Fuke S |
273 - 276 |
Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure Matsuo K, Negoro N, Kotani J, Hashizume T, Hasegawa H |
277 - 280 |
Photoemission study on interfacial reaction of Ti/n-type GaN Naono T, Okabayashi J, Toyoda S, Fujioka H, Oshima M, Hamamatsu H |
281 - 284 |
In situ X-ray diffraction study of crystallization process of GeSbTe thin films durin heat treatment Kato N, Konomi I, Seno Y, Motohiro T |
285 - 288 |
High-resolution TEM characterization of MOVPE-grown (111)-BP layer on hexagonal 6H (0001)-SiC Udagawa T, Odawara A, Shimaoka G |
289 - 292 |
Morphological investigation of double positioning growth of (111)-boron phosphide (BP) on the (0001)-GaN Odawara M, Udagawa T, Shimaoka G |
293 - 296 |
Incorporation of SiO2 for the band alignment control of Gd2O3/n-GaAs(001) structure Yang JK, Park HH |
297 - 300 |
Influence of Si3N4 and ZnS films on transmittance of InAsSb/InAsPSb hetero structures Gao YZ, Gong XY, Fang WZ, Deng HY, Hu GJ, Aoyama M, Yamaguchi T, Dai N |
301 - 304 |
Oxidization process of CVD diamond (100): H 2 x 1 surfaces Nakamura J, Ito T |
305 - 309 |
Growth and characterization of P-doped CVD diamond (111) thin films homoepitaxially grown using trimethylphosphine Wada H, Teraji T, Ito T |
310 - 313 |
Electrical properties of diamond p-i-p structures at high electric fields Yamamoto M, Watanabe T, Hamada M, Teraji T, Ito T |
314 - 317 |
Formation of wide and narrow optical-band-gap amorphous-CNx : H films using i-C4H10/N-2 supermagnetron plasma Kinoshita H, Ikuta R, Sakurai K |
318 - 321 |
Optical and structural properties of CVD-grown single crystal SiO2 using optically detected XAS Nakamura T, Takahashi N, Poolton NRJ, Malins AER |
322 - 325 |
Structural defects in SiO2/SiC interface probed by a slow positron beam Maekawa M, Kawasuso A, Chen ZQ, Yoshikawa M, Suzuki R, Ohdaira T |
326 - 329 |
Growth and morphological properties of beta-FeSi2 layers Tanaka S, Yamamoto A, Makiuchi S, Matsuyama T, Rebien M, Henrion W, Tatsuoka H, Tanaka M, Liu ZQ, Kuwabara H |
330 - 333 |
Growth and structural properties of Mg2Si and Ca2Si bulk crystals Takagi N, Sato Y, Matsuyama T, Tatsuoka H, Tanaka M, Fengmin C, Kuwabara H |
334 - 337 |
Chemical properties of an oxide nanoskin on a polymeric surface Hozumi A, Shirahata N |
338 - 342 |
Optical characterization of sol-gel deposited PZT thin films by spectroscopic ellipsometry and reflectometry in near-UV and visible regions Franta D, Ohlidal I, Mistrik J, Yamaguchi T, Hu GJ, Dai N |
343 - 346 |
Zn3N2 compensated ZnTe films and ZnTe-ZnSe superlattices grown by hot wall epitaxy Sakakibara S, Inoue Y, Mimura H, Ishino K, Ishida A, Fujiyasu H |
347 - 350 |
Control of Zn composition (0 < x < 1) in Cd1-xZnxTe epitaxial layers on GaAs substrates grown by MOVPE Yasuda K, Niraula M, Kusama H, Yamamoto Y, Tominaga A, Takagi K, Aagata Y |
351 - 354 |
Improvement in the light emission characteristics of CdS : Cu/CdS diodes Murai H, Abe T, Matsuda J, Sato H, Chiba S, Kashiwaba Y |
355 - 358 |
Transport and magnetic properties of Ce-doped LaMnO3 thin films Yanagida T, Kanki T, Vilquin B, Tanaka H, Kawai T |
359 - 364 |
HRTEM observation of interface states between ZnO epitaxial film and Si(111) substrate Nakanishi Y, Miyake A, Tatsuoka H, Kominami H, Kuwabara H, Hatanaka Y |
365 - 368 |
Deposition and structural properties of piezoelectric ZnO epitaxial film on p-InP (100) substrate for FBAR Lee JJ, Kim YB, Yoon YS |
369 - 372 |
Sb excimer-laser doping in ZnO films prepared by oxidation of sulfide on Si Ohara K, Seino T, Nakamura A, Aoki T, Kominami H, Nakanishi Y, Hatanaka Y |
373 - 376 |
Homoepitaxial growth of ZnO films on ZnO (11(2)over-bar0) substrates Kashiwaba Y, Kato H, Kikuchi T, Niikura I, Matsushita K, Kashiwaba Y |
377 - 380 |
Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition Chen ZQ, Yamamoto S, Kawasuso A, Xu Y, Sekiguchi T |
381 - 384 |
Growth and characterization of Zn1-xCdxO films using remote plasma MOCVD Ishihara J, Nakamura A, Shigemori S, Aoki T, Temmyo J |
385 - 388 |
Growth of MgxZn1-xO films using remote plasma MOCVD Nakamura A, Ishihara J, Shigemori S, Aoki T, Temmyo J |
389 - 393 |
Nano-photocatalytic decomposition of a stearic acid film deposited on the TiO2 by an atomic force microscope Kobayashi K, Tomita Y, Matsuhisa K, Doi Y |
394 - 398 |
Impact ionization phenomenon in single-crystalline rutile TiO2 Hashimoto H, Teraji T, Ito T |
399 - 402 |
Titanium dioxide surface stoichiometry and ordering studied by resonant photoemission spectroscopy Bourgeois S, Domenichini B, Li Z, Moller PJ |
403 - 407 |
Reactivity between molybdenum and TiO2 (110) surfaces: evidence of a sub-monolayer mode and a multilayer mode Domenichini B, Kruger P, Brevet A, Bourgeois S, Li Z, Moller PJ |
408 - 411 |
Photocatalytic chemisorption of water on titanium dioxide thin films obtained by radio frequency magnetron deposition Sirghi L, Hatanaka Y, Aoki T |
412 - 417 |
Structural and compositional characterization of N-2-H-2 plasma surface-treated TiO2 thin films Miao L, Tanemura S, Watanabe H, Toh S, Kaneko K |
418 - 421 |
Effect of Mn coating materials of the nano-powders on phase transition of the nano-grained BaTiO3 ceramics Park MB, Cho NH |
422 - 425 |
Control of chemical and electrical features near the grain boundary of the semiconducting BaTiO3 oxides Park MB, Cho NH |
426 - 430 |
Optical properties of NiO thin films prepared by pulsed laser deposition technique Franta D, Negulescu B, Thomas L, Dahoo PR, Guyot M, Ohlidal I, Mistrik J, Yamaguchi T |
431 - 434 |
Optical properties of rough LaNiO3 thin films studied by spectroscopic ellipsometry and reflectometry Mistrik J, Yamaguchi T, Franta D, Ohlidal I, Hu GJ, Dai N |
435 - 438 |
Ultraviolet enhanced Si-photodetector using p-NiO films Choi JM, Im S |
439 - 443 |
Inverted top-emitting organic light-emitting diodes using transparent conductive NiO electrode Park SW, Choi JM, Kim E, Im S |
444 - 448 |
Electrical characteristics of V2O5 thin films formed on p-Si by sputter-deposition and rapid thermal annealing Yoon MH, Im S |
449 - 452 |
Thickness dependence of optical properties of VO2 thin films epitaxially grown on sapphire (0001) Xu G, Jin P, Tazawa M, Yoshimura K |
453 - 457 |
Nanocrystalline WO3 films prepared by two-step annealing Jayatissa AH, Dadi A, Aoki T |
458 - 460 |
Effect of La and Zn addition on Y2O3 : Eu phosphors Sakuma S, Kominami H, Neo Y, Aoki T, Nakanishi Y, Mimura H |
461 - 464 |
Study of active surface centers in electroluminescent ZnS : Cu,Cl phosphors Sychov MM, Mjakin SV, Nakanishi Y, Korsakov VG, Vasiljeva IV, Bakhmetjev V, Solovjeva O, Komarov EV |
465 - 468 |
Characterization on thermal stability of ZnS : Mn2+/MpS/SiO2 nano-phosphor film Kubo H, Isobe T, Takahashi H, Itoh S |
469 - 472 |
Preparation of CaS : Cu,F thin-film electroluminescent devices with an emission including purple region Hakamata S, Ehara M, Kominami H, Nakanishi Y, Hatanaka Y |
473 - 476 |
Luminescent properties of SrGa2S4 : Eu thin film phosphors deposited by two electron beam evaporation Arai Y, Kominami H, Nakanishi Y, Hatanaka Y |
477 - 480 |
Magnetic properties of Fe70-xCo30-N-y(x+y) thin films Li CY, Duh JG |
481 - 484 |
Investigation on transport properties of strained La0.85Ba0.15MnO3 thin films using hall measurement Kanki T, Yanagida T, Vilquin B, Tanaka H, Kawai T |
485 - 488 |
Magnetic domain wall structures in free-standing Fe(110) monolayers Takeda Y, Nakamura K, Akiyama T, Ito T |
489 - 493 |
Domain structures of nanocrystalline Fe78Si10B12 thin films Sun ZG, Kuramochi H, Akinaga H |
494 - 497 |
Effect of Sr doping on LaTiO3 thin films Vilquin B, Kanki T, Yanagida T, Tanaka H, Kawai T |
498 - 503 |
Emission characteristics and application of semiconductor field emitters Mimura H, Neo Y, Shimawaki H, Matsumoto T, Yokoo K |
504 - 510 |
Growth of ZnO and device applications Iwata K, Tampo H, Yamada A, Fons P, Matsubara K, Sakurai K, Ishizuka S, Niki S |
511 - 516 |
Atomic layer deposition in porous structures: 3D photonic crystals King JS, Heineman D, Graugnard E, Summers CJ |
517 - 523 |
Microcavity effects and the outcoupling of light in displays and lighting applications based on thin emitting films Neyts K |
524 - 527 |
Novel green thin-film electroluminescent devices utilizing ZnS nanocrystals doped with Tb compounds Toyama T, Yoshimura K, Fujii A, Haze H, Okamoto H |
528 - 532 |
Metal-semiconductor interfaces in CdTe crystals and modification of their properties by laser pulses Gnatyuk VA, Aoki T, Hatanaka Y, Vlasenko OI |
533 - 536 |
Effects of Zn-doping on red-luminescence in Eu-doped (Mg,Ca)S phosphor films Tokunaga S, Mikami A |
537 - 540 |
Effect of ITO surface state to the aging characteristics of thin film OLED Fukushi Y, Kominami H, Nakanishi Y, Hatanaka Y |
541 - 545 |
Photocatalytic oxidation dynamics of acetone on TiO2: tight-binding quantum chemical molecular dynamics study Lv C, Wang XJ, Agalya G, Koyama M, Kubo M, Miyamoto A |
546 - 549 |
Spectroscopic ellipsometry study on TiO2 thin films modified by N-2-H-2 plasma surface treatment Tanemura S, Miao L, Watanabe H, Mori Y |
550 - 553 |
Photoresponse of surface oxygen defects on TiO2(110) Komiyama M, Li YJ |
554 - 557 |
Photocatalytic characteristics of hydro-oxygenated amorphous titanium oxide films prepared using remote plasma enhanced chemical vapor deposition Hatanaka Y, Naito H, Itou S, Kando M |
558 - 562 |
Separation of nitrogen removal pathways in a steady-state NO plus CO reaction on Pd(110): an angle-resolved desorption study Ma YS, Rzeznicka II, Matsushima T |
563 - 567 |
Chlorine gas sensors with high sensitivity using Mg-phthalocyanine thin films Miyata T, Minami T |
568 - 572 |
Effect of AZO film deposition conditions on the photovoltaic properties of AZO-Cu2O heterojunctions Tanaka H, Shimakawa T, Miyata T, Sato H, Minami T |
573 - 577 |
Unoccupied electronic band structure of conjugated molecular films interfacing polycrystalline gold surface Komolov A, Moller PJ |
578 - 583 |
Structure of mercaptoalcohol self-assembled monolayers on Au(111) Tsukamoto K, Kubo T, Nozoye H |
584 - 587 |
Chain length dependence of adsorption structure of COOH-terminated alkanethiol SAMs on Au(111) Ito E, Konno K, Noh J, Kanai K, Ouchi Y, Seki K, Hara M |
588 - 592 |
Study of thin films of carrier-doped strontium titanate with emphasis on their interfaces with organic thin films Sato N, Harada Y, Terashima T, Kanda R, Takano M |
593 - 597 |
Energy level alignment at interfaces with pentacene: metals versus conducting polymers Koch N, Elschner A, Johnson RL, Rabe JP |
598 - 602 |
Large-scale calculations of solid oxide fuel cell cermet anode by tight-binding quantum chemistry method Koyama M, Kubo M, Miyamoto A |
603 - 606 |
Fabrication of organic static induction transistors with higher order structures Mathew JC, Hirashima N, Nakamura M, Iizuka M, Kudo K |
607 - 610 |
Infrared spectroscopy of pentacene thin film on SiO2 surface Hosoi Y, Okamura K, Kimura Y, Ishii H, Niwano M |
611 - 614 |
Preparation and properties of bovine serum albumin thin films by pulsed laser deposition Sagawa J, Nagare S, Senna M |
615 - 618 |
Structural and optical properties of 6,13-pentacenequinone film Hwang DK, Kim K, Kim JH, Jung DY, Kim E, Im S |
619 - 622 |
Transparent ultra water-repellent poly(ethylene terephthalate) substrates fabricated by oxygen plasma treatment and subsequent hydrophobic coating Teshima K, Sugimura H, Inoue Y, Takai O, Takano A |
623 - 626 |
The secondary structure control of silk fibroin thin films by post treatment Taketani I, Nakayama S, Nagare S, Senna M |
627 - 630 |
Electronic-state control of amino acids on semiconductor surfaces Oda M, Nakayama T |
631 - 635 |
Density functional theory studies on decomposition of ethyl-palladium complexes: an important role of cationic species Raharintsalama R, Munakata H, Koyama M, Kubo M, Miyamoto A |
636 - 639 |
Development of new kinetic Monte Carlo simulator for hydrogen diffusion process in palladium-silver alloys Kurokawa H, Bada K, Koyama M, Kubo M, Miyamoto A |
640 - 643 |
Computational chemistry study of solid and aqueous solution interface Mart U, Jung CH, Koyama M, Kubo M, Miyamoto A |
644 - 647 |
Periodic density functional and tight-binding quantum chemical molecular dynamics study of surface hydroxyl groups on ZrO2(111)-supported Pt catalyst Jung CH, Koyama M, Kubo M, Imamura A, Miyamoto A |