Solid-State Electronics

Solid-State Electronics, Vol.114 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (32 articles)

1 - 8	Array-level stability enhancement of 50 nm AlxOy ReRAM Iwasaki TO, Ning SY, Yamazawa H, Takeuchi K
9 - 13	Pickup impact on high-voltage multifinger LDMOS-SCR with low trigger voltage and high failure current Yang L, Jin XL, Wang Y, Zhou A
14 - 16	Accurate analytical approximation of the OTFTs surface potential by means of the Lagrange Reversion Theorem Colalongo L, Ghittorelli M, Torricelli F, Kovas-Vajna ZM
17 - 22	Evaluation and optimization of short channel ferroelectric MOSFET for low power circuit application with BSIM4 and Landau theory Li Y, Lian Y, Yao K, Samudra GS
23 - 29	Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics Di Lecce V, Grassi R, Gnudi A, Gnani E, Reggiani S, Baccarani G
30 - 34	Simulation study of the electron mobility in few-layer MoS2 metal-insulator-semiconductor field-effect transistors Gonzalez-Medina JM, Ruiz FG, Marin EG, Godoy A, Gamiz F
35 - 42	A modified capacitance model of RF MEMS shunt switch incorporating fringing field effects of perforated beam Guha K, Kumar M, Agarwal S, Baishya S
43 - 48	Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22 nm node pMOSFETs Wang GL, Moeen M, Abedin A, Xu YF, Luo J, Guo YL, Qin CL, Tang ZY, Yin HZ, Li JF, Yan J, Zhu HL, Zhao C, Chen DP, Ye TC, Kolahdouz M, Radamson HH
49 - 54	On the simulation and analytical modeling of on-state DC characteristics of Silicon Carbide Double-implanted MOSFETs Jaikumar MG, Rao RR, Karmalkar S
55 - 59	A comparative study of lateral SiCN/porous silicon and vertical SiCN/porous silicon junctions for sensing ultraviolet light Chou TH
60 - 68	Hole injection and dielectric breakdown in 6H-SiC and 4H-SiC metal-oxide-semiconductor structures during substrate electron injection via Fowler-Nordheim tunneling Samanta P, Mandal KC
69 - 75	Correlated noise in bipolar transistors: Model implementation issues Huszka Z, Chakravorty A
76 - 79	A bottom-gate silicon nanowire field-effect transistor with functionalized palladium nanoparticles for hydrogen gas sensors Choi B, Ahn JH, Lee J, Yoon J, Lee J, Jeon M, Kim DM, Kim DH, Park I, Choi SJ
80 - 86	Numerical study of read scheme in one-selector one-resistor crossbar array Kim S, Kim HD, Choi SJ
87 - 89	High efficiency yellow organic light-emitting diodes with optimized barrier layers Mu Y, Zhang SM, Yue SZ, Wu QY, Zhao Y
90 - 93	Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition Kim CK, Ahn HJ, Moon JM, Lee S, Moon DI, Park JS, Cho BJ, Choi YK, Lee SH
94 - 97	Gradual bipolar resistive switching in Ni/Si3N4/n(+)-Si resistive-switching memory device for high-density integration and low-power applications Kim S, Jung S, Kim MH, Cho S, Park BG
98 - 103	Calculating drain delay in high electron mobility transistors Coffie R
104 - 110	Fowler-Nordheim electron tunneling mechanism in Ni/SiO2/n-4H SiC MOS devices Kodigala SR, Chattopadhyay S, Overton C, Ardoin I
111 - 114	Random telegraph signal transients in active logarithmic continuous-time vision sensors Pardo F, Boluda JA, Vegara F
115 - 120	Bias temperature instability comparison of CMOS LTPS-TFTs with HfO2 gate dielectric Ma WCY, Huang CY
121 - 130	Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system Mun JK, Oh JH, Sung HK, Wang C
131 - 134	A novel area-efficiency multi-finger GGnMOS with high ESD robustness Zhang CW, Liu SY, Sun WF, Shi LX
135 - 140	Electrically tunable spectral responsivity in metal-semiconductor-metal photodetectors based on low-dimensional ZnCdS/ZnMgS/GaP, ZnCdS/ZnS/GaP heterostructures Averin SV, Kuznetsov PI, Zhitov VA, Zakharov LY, Kotov VM, Alkeev NV
141 - 147	Effect of gate-length shortening on the terahertz small-signal and self-oscillations characteristics of field-effect transistors Starikov E, Shiktorov P, Gruzinskis V, Marinchio H, Palermo C, Varani L
148 - 154	Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices Huang HL, Liang YC
155 - 162	Improved modeling on the RF behavior of InAs/AlSb HEMTs Guan H, Lv HL, Zhang YM, Zhang YM
163 - 166	Maximizing the value of gate capacitance in field-effect devices using an organic interface layer Kwok HL
167 - 170	The impact of gate to drain spacing on hot-carrier degradation in sub-100 nm Ni-Pt salicidation FinFETs Lee SM, Lee HD, Ok I, Oh J
171 - 173	Depletion length in semiconductor nanostructures with spherical symmetry Borblik VL
174 - 177	The reliability study of III-V solar cell with copper based contacts Hsu CH, Chang EY, Chang HJ, Maa JS, Pande K
178 - 181	Formation and characterization of Ni/Al Ohmic contact on n(+)-type GeSn Zhang X, Zhang DL, Zheng J, Liu Z, He C, Xue CL, Zhang GZ, Li CB, Cheng BW, Wang QM