Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.19, No.2 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (51 articles)

391 - 393	Epitaxial growth of TiO2 thin films by pulsed laser deposition on GaAs(100) substrates Liu XH, Chen XY, Yin J, Liu ZG, Liu JM, Yin XB, Chen GX, Wang M
394 - 397	Waveguide structure of Er-doped KTiOPO4 films on different substrates by pulsed-laser deposition Wang KM, Shi BR, Cue N, Zhu YY, Xiao RF, Lu F, Hu H, Liu YG
398 - 404	Anisotropic etching of polymer films by high energy (similar to 100s of eV) oxygen atom neutral beams Panda S, Economou DJ, Chen L
405 - 409	Microstructure of Fe-N thin films prepared using an atomic nitrogen beam Telling ND, Jones GA, Faunce CA, Grundy PJ, Blythe HJ, Joyce DE
410 - 413	Epitaxial growth of Al2O3 thin films on Si(100) using ionized beam deposition Whangbo SW, Choi YK, Chung KB, Jang HK, Whang CN
414 - 419	Properties of aluminum-doped zinc oxide films deposited by high rate mid-frequency reactive magnetron sputtering Malkomes N, Vergohl M, Szyszka B
420 - 424	Pulsed dc magnetron discharge for high-rate sputtering of thin films Musil J, Lestina J, Vlcek J, Tolg T
425 - 428	Plasma enhanced direct current planar magnetron sputtering technique employing a twinned microwave electron cyclotron resonance plasma source Xu J, Deng XL, Yu SJ, Lu WQ, Ma TC
429 - 434	Frequency-dependent pulsed direct current magnetron sputtering of titanium oxide films Kim JY, Barnat E, Rymaszewski EJ, Lu TM
435 - 446	High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether) Standaert TEFM, Matsuo PJ, Li X, Oehrlein GS, Lu TM, Gutmann R, Rosenmayer CT, Bartz JW, Langan JG, Entley WR
447 - 454	Study of surface chemical changes and erosion rates for CV-1144-0 silicone under electron cyclotron resonance oxygen plasma exposure Yan L, Gao X, Bungay C, Woollam JA
455 - 459	Characterization of titanium nitride etch rate and selectivity to silicon dioxide in a Cl-2 helicon-wave plasma Chiu HK, Lin TL, Hu Y, Leou KC, Lin HC, Tsai MS, Huang TY
460 - 466	Effects of gas-flow structures on radical and etch-product density distributions on wafers in magnetomicrowave plasma etching reactors Ikegawa M, Kobayashi J, Fukuyama R
467 - 476	Cavity ring down detection of SiH3 in a remote SiH4 plasma and comparison with model calculations and mass spectrometry Kessels WMM, Leroux A, Boogaarts MGH, Hoefnagels JPM, van de Sanden MCM, Schram DC
477 - 484	HBr concentration and temperature measurements in a plasma etch reactor using diode laser absorption spectroscopy Chou SI, Baer DS, Hanson RK, Collison WZ, Ni TQ
485 - 489	Electron cyclotron wave resonance plasma assisted deposition of cubic boron nitride thin films Cao ZX
490 - 498	Use of radio frequency bias in the large area plasma processing system Manheimer WM, Lampe M, Fernsler RF
499 - 502	Comparison of pulsed laser deposition CNx films grown from organic and inorganic targets Gonzalez P, Soto R, Leon B, Perez-Amor M
503 - 506	Influence of the different operations of gas in the large microwave plasmas Wu CF, Huang WD, Zhan RJ
507 - 514	Fluorinated-chlorinated SiO2 films prepared at low temperature by remote plasma-enhanced chemical-vapor deposition using mixtures of SiF4 and SiCl4 Alonso JC, Pichardo E, Rodriguez-Fernandez L, Cheang-Wong JC, Ortiz A
515 - 523	Microcrystalline silicon by plasma enhanced chemical vapor deposition from silicon tetrafluoride Cicala G, Capezzuto P, Bruno G
524 - 538	Investigations of surface reactions during C2F6 plasma etching of SiO2 with equipment and feature scale models Zhang D, Kushner MJ
539 - 546	Characteristics of a large diameter reactive ion beam generated by an electron cyclotron resonance microwave plasma source Geisler S, Brockhaus A, Engemann J
547 - 556	Thermal imidization of fluorinated poly(amic acid) precursors on a glycidyl methacrylate graft-polymerized Si(100) surface Zhang Y, Tan KL, Liaw BY, Liaw DJ, Kang ET, Neoh KG
557 - 562	Characterization of (Ti,Al)N films deposited by off-plane double bend filtered cathodic vacuum arc Cheng YH, Tay BK, Lau SP, Shi X, Chua HC
563 - 567	Adsorption of TPCl4 and initial stages of Ti growth on Si(001) Mitsui T, Hill E, Curtis R, Ganz E
568 - 575	Negative cesium sputter ion source for generating cluster primary ion beams for secondary ion mass spectrometry analysis Gillen G, King L, Freibaum B, Lareau R, Bennett J, Chmara F
576 - 583	Study of chromium oxide film growth by chemical vapor deposition using infrared reflection absorption spectroscopy Bermudez VM, DeSisto WJ
584 - 590	Real-time spectroscopic ellipsometry as a characterization tool for oxide molecular beam epitaxy Gibbons BJ, Hawley ME, Trolier-McKinstry S, Schlom DG
591 - 598	Energy spectra of electrons in a dc glow discharge with a semitransparent anode Pletnev V, Zukotynski S
599 - 602	Development of vacuum ultraviolet absorption spectroscopy technique employing nitrogen molecule microdischarge hollow cathode lamp for absolute density measurements of nitrogen atoms in process plasmas Takashima S, Arai S, Hori M, Goto T, Kono A, Ito M, Yoneda K
603 - 608	Use of angle resolved x-ray photoelectron spectroscopy for determination of depth and thickness of compound layer structures Spruytte S, Coldren C, Harris J, Pantelidis D, Lee HJ, Bravman J, Kelly M
609 - 613	Microstructure and tribological performance of MoSx/Au co-sputtered composites Simmonds MC, Savan A, Pfluger E, Van Swygenhoven H
614 - 620	Texture studies of Si1-xGex thin films by x-ray diffraction and transmission electron microscopy Qin W, Ast DG, Kamins TI
621 - 626	Real-time growth rate metrology for a tungsten chemical vapor deposition process by acoustic sensing Henn-Lecordier L, Kidder JN, Rubloff GW, Gogol CA, Wajid A
627 - 632	Microscopic composition difference related to oxidizing humidity near the ultrathin silicon oxide-Si(100) interface Yamada H
633 - 639	Microstructural investigation of alpha-Al2O3-epitaxially coated cemented carbide cutting tools Ishii T, Shima N, Ueda H, Okayama S, Gonda M
640 - 645	Mechanism of ultralow outgassing rates in pure copper and chromium-copper alley vacuum chambers: Reexamination by the pressure-rise method Watanabe F
646 - 650	Study of a mechanically clamped cryo-chuck device in a high density plasma for deep anisotropic etching of silicon Hibert C, Aachboun S, Boufnichel M, Ranson P
651 - 655	Fixed-bed microreactor for transient kinetic experiments with strongly adsorbing gases under high vacuum conditions van Veen AC, Zanthoff HW, Hinrichsen O, Muhler M
656 - 661	Spiral channel flows in a disk-type drag pump Heo JS, Hwang YK
662 - 672	Three-dimensional rarefied flows in rotating helical channels Hwang YK, Heo JS
673 - 674	Calibrated variable leak for use in ion source operation Langley RA, Dastoor PC, O'Connor DJ
675 - 680	Speed distribution of C2H6 molecular beam scattered through chattering collision on a LiF(001) surface Tomii T, Kondo T, Yagyu S, Yamamoto S
681 - 688	Laser damage studies on MgF2 thin films Protopapa ML, De Tomasi F, Perrone MR, Piegari A, Masetti E, Ristau D, Quesnel E, Duparre A
689 - 692	Analysis of the molecular structure of fluorocarbon deposits produced by C4F8 and C4F8-H-2 plasmas Takada N, Shibagaki K, Sasaki K, Kadota K, Oyama KI
693 - 696	Reconsideration of the seal mechanism in the ConFlat (R) system Kurokouchi S, Morita S, Okabe M
697 - 699	Gravity-related transport in reactive off-axis sputtering deposition? Zhu S, Su CH, Lehozeky SL
700 - 702	Radio-frequency transient match monitoring using a fast Fourier transform for plasma diagnosis Kim B
703 - 705	Formation of macroparticles in are ion-plated nitride coatings Shiao MH, Shieu FS
706 - 708	Silicon bonding for ultrahigh vaccuum surface science studies Gokhale S, Fink A, Trischberger P, Eberle K, Widdra W