Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.22, No.3 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (118 articles)

L1 - L5	Atomic-level robustness of the Si(100)-2X1 : H surface following liquid phase chemical treatments in atmospheric pressure environments Baluch AS, Guisinger NP, Basu R, Foley ET, Hersam MC
445 - 451	Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics Niu D, Ashcraft RW, Hinkle C, Parsons GN
452 - 460	Forced convection magnetoelectroplating for enhanced semiconductor metallization Said RA
461 - 464	Chemical-beam deposition of GaN films on Si(111) from diethylazidogallium methylhydrazine adduct Sung MM, Kim CG, Kim Y
465 - 471	Effects of thermal annealing Of W/SiO2 multilayer Bragg reflectors on resonance characteristics of film bulk acoustic resonator devices with cobalt electrodes Yim M, Kim DH, Chai D, Yoon G
472 - 476	Cathode glow polymerization of trimethylsilane Yasuda H, Yu QS
477 - 481	Ionized magnetron sputter deposition of hard nanocomposite TiN/amorphous-silicon nitride films Phinichka N, Chandra R, Barber ZH
482 - 486	Thickness measurements by quartz microbalance during thin-film growth by organic-molecular-beam deposition Campione M, Cartotti M, Pinotti E, Sassella A, Borghesi A
487 - 493	Hydrogenated-amorphous carbon nitride films formed from the dissociative excitation reaction of CH3CN with the microwave-discharge flow of Ar: Correlation of the [N]/([N]+[C]) ratio with the relative number densities of the CH(A(2)Delta) and CN(B-2 Sigma(+)) states Ito H, Miki H, Namiki KC, Ito N, Saitoh H, Suzuki T, Yatsui K
494 - 499	Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide Cheng YL, Wang YL, Chen HW, Lan JL, Liu CP, Wu SA, Wu YL, Lo KY, Feng MS
500 - 510	Properties of C4F8 inductively coupled plasmas. l. Studies of Ar/c-C4F8 magnetically confined plasmas for etching of SiO2 Li X, Ling L, Hua XF, Oehrlein GS, Wang YC, Vasenkov AV, Kushner MJ
511 - 530	Properties of c-C4F8 inductively coupled plasmas. II. Plasma chemistry and reaction mechanism for modeling of Ar/c-C4F8/O-2 discharges Vasenkov AV, Li X, Oehrlein GS, Kushner MJ
531 - 533	Electron-cyclotron-resonance plasma etching of the ZnO layers grown by molecular-beam epitaxy Ogata K, Honden T, Tanite T, Komuro T, Koike K, Sasa S, Inoue M, Yano M
534 - 544	Extraction of negative ions from pulsed electronegative inductively coupled plasmas having a radio-frequency substrate bias Subramonium P, Kushner MJ
545 - 552	Numerical simulation of the thermal-mechanical process of high current pulsed electron beam treatment Zou JX, Qin Y, Dong C, Wang XG, Wu AM, Hao SZ
553 - 563	Monitoring chamber walls coating deposited during plasma processes: Application to silicon gate etch processes Joubert O, Cunge G, Pelissier B, Vallier L, Kogelschatz M, Pargon E
564 - 569	Effects of germanium content on sol-gel GeO2/gamma-glycidoxypropyltri methoxysilane hybrid planar waveguides prepared at low temperature Que WX, Hu X
570 - 577	Composition, structural, and electrical properties of fluorinated silicon-nitride thin films grown by remote plasma-enhanced chemical-vapor deposition from SiF4/NH3 mixtures Fandino J, Ortiz A, Rodriguez-Fernandez L, Alonso JC
578 - 593	Effects of atomic hydrogen on the selective area growth of Si and Si1-xGex thin films on Si and SiO2 surfaces: Inhibition, nucleation, and growth Schroeder TW, Lam AM, Ma PF, Engstrom JR
594 - 597	In situ photoemission study of a Pr2O3 thin film on GaAs(111) Wu JX, Wang ZM, Li S, Ma MS
598 - 601	Etching mechanism of a GaN/InGaN/GaN heterostructure in Cl-2- and CH4-based inductively coupled plasmas Kim HK, Lin H, Ra Y
602 - 605	Template stripping using cold welding Blackstock JJ, Li ZY, Jung GY
606 - 615	Etching of high aspect ratio structures in Si using SF6/O-2 plasma Gomez S, Belen RJ, Kiehlbauch M, Aydil ES
616 - 623	Deposition of Hf-silicate gate dielectric on SixGe1-X(100): Detection of interfacial layer growth Addepalli S, Sivasubramani P, El-Bouanani M, Kim MJ, Gnade BE, Wallace RM
624 - 635	Analysis of the chemical composition and deposition mechanism, of the SiOx-Cl-y layer on the plasma chamber walls during silicon gate etching Kogelschatz M, Cunge G, Sadeghi N
636 - 639	Oxygen plasma rapid thermal annealing to improve the electrical properties of Pt-SrBi2Nb2O9-SiO2_Si gate structure Kim IS, Kim SI, Kim YT
640 - 645	SiBCN synthesis by high-dose N++C++BF2+ ion implantation Cervera M, Hernandez MJ, Piqueras J, Morant C, Prieto P, Elizalde E, Sanz JM
646 - 649	Physical and mechanical properties of sputtered Ta-Si-N films with a high (>= 40 at %) content of Si Zeman H, Musil J, Zeman P
650 - 654	Electron backscattered diffraction study of poly-Si by Ni-mediated crystallization of amorphous silicon using a SiO2 nanocap Chang YJ, Oh JH, Kim KH, Jang J, Kim DI, Oh KH
655 - 660	Metal-insulator-metal capacitors using Y2O3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition Durand C, Vallee C, Loup V, Salicio O, Dubourdieu C, Blonkowski S, Bonvalot M, Holliger P, Joubert O
661 - 669	Angular dependence of etch rates in the etching of poly-Si and fluorocarbon polymer using SF6, C4F8, and O-2 plasmas Min JH, Lee GR, Lee JK, Moon SH, Kim CK
670 - 675	Femtosecond pulsed laser deposition of amorphous, ultrahard boride thin films Stock M, Molian P
676 - 682	Effects of the insertion of a thick Sp2 buffer layer on the adhesion of cBN-rich film Wong SF, Ong CW, Pang GKH, Baba-Kishi KZ, Lau WM
683 - 688	Thioethanol on Cu(111) at room temperature: A near edge x-ray absorption fine structure and x-ray photoelectron spectroscopy study Syed JA, Sardar SA, Yagi S, Tanaka K
689 - 697	Investigation and modeling of plasma-wall interactions in inductively coupled fluorocarbon plasmas Joseph EA, Zhou B, Sant SP, Overzet LJ, Goeckner MJ
698 - 704	Phase transition behavior of reactive sputtering deposited Co-N thin films using transmission electron microscopy Fang JS, Yang LC, Hsu CS, Chen GS, Lin YW, Chen GS
705 - 710	Outgassing properties of the spallation neutron source, ring vacuum chambers coated with titanium nitride He P, Hseuh HC, Mapes M, Todd R, Weiss D, Wilson D
711 - 718	Spectroscopic ellipsometry characterization of ZrO2 films on Si(100) deposited by high-vacuum-metalorganic chemical vapor deposition Song Z, Rogers BR, Theodore ND
719 - 724	Phase and structural characterization of vanadium oxide films grown on amorphous SiO2/Si substrates Youn DH, Kim HT, Chae BG, Hwang YJ, Lee JW, Maeng SL, Kang KY
725 - 733	Optical characteristics and color of TiN/SiN1.3 nanocomposite coatings Jedrzejowski P, Baloukas B, Klemberg-Sapieha JE, Martinu L
734 - 734	High vacuum end cap design for use with quartz tubes Weyburne DW, Paduano OS
735 - 738	Construction of a variable aperture cell for source flux control in a molecular-beam epitaxy environment Mattord TJ, Oye MM, Gotthold D, Hansing C, Holmes AL, Streetman BG
739 - 739	Extremely low-outgassing material: 0.2% beryllium copper alloy (vol 22, pg 181, 2004) Watanabe F
742 - 742	Papers from the Eleventh Canadian Semiconductor Technology Conference -18-22 August 2003 - The Fairmont Chateau Laurier Hotel - Ottawa, Canada - Preface Gupta JA, Xu DX
743 - 746	Nano patterning on optical fiber and laser diode facet with dry resist Kelkar PS, Beauvais J, Lavallee E, Drouin D, Cloutier M, Turcotte D, Yang P, Mun LK, Legario R, Awad Y, Aimez V
747 - 751	Cold wall chemical vapor deposition of single walled carbon nanotubes Finnie P, Bardwell J, Tsandev I, Tomlinson M, Beaulieu M, Fraser J, Lefebvre J
752 - 754	Numerical simulations of variable range hopping conductivity in deoxyguanosine deoxyribose nucleic acid nucleoside films Singh MR, Tsang CM
755 - 759	Variable current transport in polymer thin film transistors Marinov O, Deen MJ, Yu JF, Vamvounis G, Holdcroft S, Woods W
760 - 763	Oligo-p-phenylevinylene organic thin-film transistors with chemically modified dielectric surfaces Gorjanc TC, Levesque I, D'iorio M
764 - 767	Microcavity organic light emitting diodes with double sided light emission of different colors Liu X, Poitras D, Tao Y, Py C
768 - 770	Fabrication of short channel organic thin film transistors by Si-etching method Chen Y, Zhu WW, Xiao S, Shih I
771 - 775	Organometallic vapor phase epitaxy of GaAs1-N-x(x) alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation Beaudry JN, Masut RA, Desjardins P, Wei R, Chicoine M, Bentoumi G, Leonelli R, Schiettekatte F, Guillon S
776 - 780	Empirical tight-binding calculations of the electronic structure of dilute III-V-N semiconductor alloys Turcotte S, Shtinkov N, Desjardins P, Masut RA, Leonelli R
781 - 787	High-speed Si resonant cavity enhanced photodetectors and arrays Unlu MS, Emsley MK, Dosunmu OI, Muller P, Leblebici Y
788 - 791	1.5 mu m to 0.87 mu m optical upconversion using wafer fusion technology Luo H, Ban D, Liu HC, Springthorpe AJ, Wasilewski ZR, Buchanan M, Glew R
792 - 795	Growth of InGaN self-assembled quantum dots and their application to photodiodes Ji LW, Su YK, Chang SJ, Tsai SI, Hung SC, Chuang RW, Fang TH, Tsai TY
796 - 799	Optical switching in InGaAsP waveguides using localized index gradients Abdalla S, Ng S, Celo D, El-Mougy S, Smy I, Syrett B, Barrios P, Delage A, Golub I, Janz S, McKinnon R, Poole P, Raymond S
800 - 802	Optical modulator in silicon-on-insulator with a low thermal signature Waldron PD, Jessop PE, Yuen AP, Winchiu L, Chyurlia P, Tarr NG, Smy TJ, Golub I, Xu DX, Janz S
803 - 806	Influence of the electrical contact on the reliability of InP-based ridge waveguide distributed feedback semiconductor diode lasers for telecommunications applications Zhang S, Boudreau MG, Kuchibhatla R, Tao Y, Das SR, Griswold EM, Sharma U
807 - 810	Study of AIGaInP multiquantum-well/double heterostructure light-emitting diodes with in-added GaP window layer regrown by antimony-based liquid phase epitaxy Chang LB, Kuei PY, Hsieh LZ, Chang LY, Lin RM
811 - 815	Modeling of mushroom waveguide photodetector El-Batawy YM, Deen MJ
816 - 820	Electrode fabrication for high-speed polarization mode converter Meng X, Zhang S, Chen C, Poirier M, Shepherd FR, Das SR
821 - 825	Suitability of II-VI semiconductors for photonic applications: Common-anion versus common-cation superlattices Tit N
826 - 830	Optical add and drop multiplexer using on-chip integration of planar light circuits and optical microelectromechanical system switching Liu XY, Kubby J, Chen JK, Diehl J, Feinberg K, German K, Gulvin P, Herko L, Jia N, Lin PY, Ma J, Meyers J, Nystrom P, Wang YR
831 - 836	Electrokinetic movement of micro-objects in fluids using microelectromechanical system electrode arrays Ellerington N, Hubbard T, Kujath M
837 - 841	Dry release of polymer structures with anti-sticking layer Cheng MC, Gadre AP, Garra JA, Nijdam AJ, Luo C, Schneider TW, White RC, Currie JF, Paranjape M
842 - 846	Fabrication of a self-absorbing, self-supported complementary metal-oxide-semiconductor compatible micromachined bolometer Ahmed AHZ, Tait RN
847 - 850	Copper coplanar waveguides in Si substrates for 10 GHz applications Amaya RE, Levenets V, Tarr NG, Plett C
851 - 855	High-k titanium silicate thin films grown by reactive magnetron sputtering for complementary metal-oxide-semiconductor applications Brassard D, Sarkar DK, El Khakani MA, Ouellet L
856 - 858	Low-temperature stress-assisted germanium-induced crystallization of silicon-germanium alloys on flexible polyethylene terephtalate substrates Hekmatshoar B, Shahrjerdi D, Mohajerzadeh S, Khakifirooz A, Robertson M, Tonita A, Bennett JC
859 - 864	Optical switching of vanadium dioxide thin films deposited by reactive pulsed laser deposition Soltani M, Chaker M, Haddad E, Kruzelecky RV, Nikanpour D
865 - 869	Facet coatings for nonhermetically packaged lasers Caballero JA, He C, Djavani-Tabrizi S, Yin T, Mallard R, Das SR
870 - 873	Excimer laser annealing of p-type perovskite thin films Du X, Dubowski JJ, Post M, Wang D, Tunney J
874 - 878	Passivation of GaAs using P2S5/(NH4)(2)S+Se and (NH4)(2)S+Se Fanaei T, Aktik C
879 - 882	Optical and electrical properties of sputtered vanadium oxide films Gan FY, Laou P
883 - 886	Optical and compositional characterization of SiOxNy and SiOx thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition Roschuk T, Wojcik J, Tan X, Davies JA, Mascher P
887 - 890	Laser-induced selective area tuning of GaAs/AlGaAs quantum well microstructures for two-color IR detector operation Dubowski JJ, Song CY, Lefebvre J, Wasilewski Z, Aers G, Liu HC
891 - 893	Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy Lin RM, Cheng CC, Shen HT, Nee TE
894 - 896	Quantum states in a crossed wire system Paranjape VV
897 - 901	Interface layers in In0.532Ga0.468As/InP superlattices Rowell NL, Yu G, Lockwood DJ, Poole PJ
902 - 907	Use of the focused ion beam to locate failure sites within electrically erasable read only memory microcircuits Haythornthwaite R, Nxumalo J, Phaneuf MW
908 - 911	Characterization GaAs1-xNx epitaxial layers by ion beam analysis Wei P, Chicoine M, Gujrathi S, Schiettekatte F, Beaudry JN, Masut RA, Desjardins P
912 - 915	Metalorganic vapor phase diffusion using dimethylzinc. Part 1: Analysis of the reproducibility of the resulting diffusion profile as measured by secondary ion mass spectrometry Hampel CA, Blaauw C, Calder ID, Glew R, Macquistan D, Bryskiewicz T, Guillon S
916 - 920	Metalorganic vapor phase diffusion using DMZn Part II: Determination of the interstitial zinc charge state from secondary ion mass spectroscopy measurements using the Boltzmann-Matano technique Hampel CA, Blaauw C, Haysom JE, Glew R, Calder ID, Guillon S, Bryskiewicz T, Puetz N
921 - 924	Photoluminescence measurements of Er-doped chalcogenide glasses Allen TW, Hawkeye MM, Haugen CJ, DeCorby RG, McMullin JN, Tonchev D, Koughia K, Kasap SO
925 - 929	Implant isolation in an indium phosphide optoelectronic device: A scanning spreading resistance microscopy study St Dixon-Warren J, Haysom JE, Betty I, Lu J, Hewitt K
930 - 934	Focused ion beam and transmission electron microscopy method for root cause analysis of InP ridge laser devices Griswold EM, Sharma U, Phaneuf MW
935 - 938	Optical phonons in InSb1-xAsx/InSb Rowell NL, Lockwood DJ, Yu G, Gao YZ, Gong XY, Aoyama M, Yamaguchi T
939 - 942	Dopant layer abruptness in strained Si1-xGex heterostructures Rowell NL, Houghton DC, Berbezier I, Ronda A, Webb D, Ward M
943 - 947	Raman and transmission electron microscopy study of disordered silicon grown by molecular beam epitaxy Tay L, Lockwood DJ, Baribeau JM, Wu X, Sproule GI
948 - 953	Resolution enhancement in probing of high-speed integrated circuits using dynamic electrostatic force-gradient microscopy Weng Z, Kaminski I, Bridges GE, Thomson DJ
954 - 961	Energy band gaps of InN containing oxygen and of the In(x)AI(1-x)N interface layer formed during InN film growth Alexandrov D, Scott K, Butcher A, Wintrebert-Fouquet M
962 - 965	Single crystal growth of Ge1-xSix alloys using the traveling solvent method Labrie D, George AE, Jamieson M, Obruchkov S, Healey JP, Paton BE, Saghir MZ
966 - 970	Stress-assisted nickel-induced crystallization of silicon on glass Hashemi P, Derakhshandeh J, Mohajerzadeh S, Robertson M, Tonita A
971 - 974	Two-dimensional a-Si : H based n-i-p sensor array Chang JH, Vygranenko Y, Nathan A
975 - 980	Charge collection and absorption-limited x-ray sensitivity of pixellated x-ray detectors Kabir MZ, Kasap SO
981 - 986	Amorphous silicon shift registers for display drivers Kumar A, Sambandan S, Sakariya K, Servati P, Nathan A
987 - 990	Reset noise in active pixel image sensors Lai J, Nathan A
991 - 995	Highly conductive n(+) hydrogenated microcrystalline silicon and its application in thin film transistors Lee CH, Striakhilev D, Nathan A
996 - 1000	Deep-ultraviolet-induced damage of charge coupled device sensors Li F, Nathan A, Nixon O
1001 - 1004	Analysis and characterization of self-compensating current programmed a-Si : H active matrix organic light-emitting diode pixel circuits Sakariya K, Sambandan S, Servati P, Nathan A
1005 - 1009	X-ray-induced recombination effects in a-Se-based x-ray photoconductors used in direct conversion x-ray sensors Fogal B, Kabir MZ, O'Leary SK, Johanson RE, Kasap SO
1010 - 1014	Noise performance of a current-mediated amplified pixel for large-area medical imaging Karim KS, Nathan A
1015 - 1019	Fabrication and characterization of amorphous Si/crystalline Si heterojunction devices for photovoltaic applications Baroughi MF, Jeyakumar R, Vygranenko Y, Khalvati F, Sivoththaman S
1020 - 1022	InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer Chen CH, Chang SJ, Su YK
1023 - 1026	Monocrystalline CulnSe(2) photovoltaic cell of superior performance Du H, Shih I, Champness CH
1027 - 1030	Fabrication of (NH4)(2)S passivated GaAs metal-insulator-semiconductor devices using low-frequency plasma-enhanced chemical vapor deposition Jaouad A, Aimez V, Aktik C, Bellatreche K, Souifi A
1031 - 1035	Temperature distribution and heating in multiple emitter SiGeHBTs McAlister SP, McKinnon WR, Kovacic SJ, Lafontaine H
1036 - 1039	InVerse modeling of delta doped pseudomorphic high electron, mobility transistors Mishra M, Kumar MJ, Singh Y, Shukla SR, Vyas HP, Rawal DS, Naik A, Sharma HS, Sehgal BK, Gulati R
1040 - 1043	Arrays of holes fabricated by electron-beam lithography combined with image reversal process using nickel pulse reversal plating Awad Y, Lavallee E, Lau KM, Beauvais J, Drouin D, Cloutier M, Turcotte D, Yang P, Kelkar P
1044 - 1047	Direct UV patterning of waveguide devices in AS(2)Se(3) thin films Bryce RM, Nguyen HT, Nakeeran P, DeCorby RG, Dwivedi PK, Haugen CJ, McMullin JN, Kasap SO
1048 - 1053	Thick film resist lithography for a-Si : H devices with high topography and long dry etch processes Chan I, Nathan A
1054 - 1057	Etching of gain-coupled gratings into a multi-quantum-well laser with selective wet etches Finlay R
1058 - 1061	Inductively coupled plasma etching of GaAs low loss waveguides for a traveling waveguide polarization converter, using chlorine chemistry Lu J, Meng X, SpringThorpe AJ, Shepherd FR, Poirier M
1062 - 1066	Techniques for achieving low leakage current in dry etched InGaAs waveguide PIN detectors Qian YYH, An S, Betty I, Rousina-Webb R, Griswold E, Foster R, Driad R
1067 - 1072	Polymethylmethacry ate membrane for fluid encapsulation and release in microfluidic systems Srivastava YN, Gadre AP, Hylton T, Monica AH, Schneider TW, White RC, Paranjape M, Currie JF
1073 - 1078	Analysis of step-based silicon surfaces at facet boundaries during wet anisotropic etching Stateikina I, Elalamy MZ, Landsberger LM, Kahrizi M
1079 - 1082	Process for uniformly electroplating a patterned wafer with electrically isolated devices Zhang S, Meng X, Zheng X, Das SR, Shepherd F