Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.28, No.1 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (69 articles)

1 - 16	Low-dimensional oxide nanostructures on metals: Hybrid systems with novel properties Netzer FP, Allegretti F, Surnev S
17 - 20	Improvement of Ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 A degrees heterojunction bipolar transistors Mairiaux E, Desplanque L, Wallart X, Zaknoune M
21 - 26	Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching Kallesoe C, Molhave K, Larsen KF, Engstrom D, Hansen TM, Boggild P, Martensson T, Borgstrom M, Samuelson L
27 - 29	Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes Kim HY, Kim J, Ren F, Jang S
30 - 35	Step-width adjustment in fabrication of staircase structures Li P, Lee SY, Jeon SC, Kim JS, Kim KN, Hyun MS, Yoo JJ, Kim JW
36 - 41	Fully automated hot embossing processes utilizing high resolution working stamps Glinsner T, Veres T, Kreindl G, Roy E, Morton K, Wieser T, Thanner C, Treiblmayr D, Miller R, Lindner P
42 - 44	Graphoepitaxy of block copolymers using selectively removable templates Ilievski F, Ross CA
45 - 51	Effect of process related and haze defects on 193 nm immersion lithography Tay CJ, Quan C, Ling ML, Lin Q, Chua GS
52 - 55	Passivation of AlN/GaN high electron mobility transistor using ozone treatment Lo CF, Chang CY, Pearton SJ, Kravchenko II, Dabiran AM, Wowchak AM, Cui B, Chow PP, Ren F
56 - 61	Advanced in situ pre-Ni silicide (Siconi) cleaning at 65 nm to resolve defects in NiSix modules Yang RP, Su N, Bonfanti P, Nie JX, Ning J, Li TT
62 - 65	Metastable structure and magnetism of Cr-doped AlN in AlN/TiN multilayers Zeng F, Fan B, Yang YC, Yang PY, Luo JT, Chen C, Pan F, Yan WS
66 - 72	Optimization of layer structure supporting long range surface plasmons for surface plasmon-enhanced fluorescence spectroscopy biosensors Huang CJ, Dostalek J, Knoll W
73 - 77	Analysis and metrology with a focused helium ion beam Sijbrandij S, Notte J, Scipioni L, Huynh C, Sanford C
78 - 81	Direct thermal-UV nanoimprint of an iron-containing organometallic hybrid film Han HL, Bhushan A, Yaghmaie F, Davis CE
82 - 85	Sub-200 nm gap electrodes by soft UV nanoimprint lithography using polydimethylsiloxane mold without external pressure Hamouda F, Barbillon G, Gaucher F, Bartenlian B
86 - 89	Making high-fidelity imprint template by resist patterns over a flexible conductive polymer substrate Ye XD, Ding YC, Duan YG, Liu HZ, Shao JY
90 - 95	Spin-coatable HfO2 resist for optical and electron beam lithographies Saifullah MSM, Khan MZR, Hasko DG, Leong ESP, Neo XL, Goh ETL, Anderson D, Jones GAC, Welland ME
96 - 103	640x480 pixel active-matrix Spindt-type field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target Nanba M, Takiguchi Y, Honda Y, Hirano Y, Watabe T, Egami N, Miya K, Nakamura K, Taniguchi M, Itoh S, Kobayashi A
L1 - L4	Interdependence of optimum exposure dose regimes and the kinetics of resist dissolution for electron beam nanolithography of polymethylmethacrylate Mohammad MA, Fito T, Chen J, Aktary M, Stepanova M, Dew SK
L5 - L8	Chloride ion detection by InN gated AlGaN/GaN high electron mobility transistors Chu BH, Lin HW, Gwo S, Wang YL, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicuni KJ, Ren F
104 - 109	Roller-reversal imprint process for preparation of large-area microstructures Liu HZ, Jiang WT, Ding YC, Shi YS, Yin L
110 - 115	Microstructures and magnetic properties of amorphous TbxCo1-x films deposited by facing target magnetron-sputtering system with divergent magnetic field Kim T, Lee HY, Lee K, Hwang JY
116 - 119	Improvement in bias stability of amorphous-InGaZnO4 thin film transistors with SiOx passivation layers Lim W, Douglas EA, Norton DP, Pearton SJ, Ren F, Heo YW, Son SY, Yuh JH
120 - 127	Infinite etch selectivity and line edge roughness variation during etching of silicon oxynitride with an extreme ultraviolet resist pattern in dual-frequency CH2F2/H-2/Ar capacitively coupled plasmas Kwon BS, Kim JS, Lee NE, Lee SK
128 - 130	Four beams surface plasmon interference nanoscale lithography for patterning of two-dimensional periodic features Sreekanth KV, Murukeshan VM
131 - 137	Ultrahigh selective etching of Si3N4 films over SiO2 films for silicon nitride gate spacer etching Lee S, Oh J, Lee K, Sohn H
138 - 142	Room-temperature capillary-imprint lithography for making micro-/nanostructures in large areas Ye XD, Ding YC, Duan YG, Liu HZ, Lu BH
143 - 148	Parameter study for silicon grass formation in Bosch process Jung K, Song W, Lim HW, Lee CS
149 - 156	Patterning of porous SiOCH using an organic mask: Comparison with a metallic masking strategy Darnon M, Chevolleau T, David T, Ducote J, Posseme N, Bouyssou R, Bailly F, Perret D, Joubert O
157 - 162	GaAs/AlOx micropillar fabrication for small mode volume photon sources Choi JM, Silverman KL, Stevens MJ, Harvey TL, Mirin RP
163 - 168	Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transfer Wei X, Wu AM, Wang X, Li XY, Ye F, Chen J, Chen M, Zhang B, Li CL, Zhang M, Wang X
169 - 172	Stenciled conducting bismuth nanowires Savu V, Neuser S, Villanueva G, Vazquez-Mena O, Sidler K, Brugger J
173 - 179	Nanoindentation study of thin plasma enhanced chemical vapor deposition SiCOH low-k films modified in He/H-2 downstream plasma Vanstreels K, Urbanowicz AM
180 - 187	Surface topography and physicochemistry of silver containing titanium nitride nanocomposite coatings Whitehead K, Kelly P, Li HQ, Verran J
188 - 193	Effects of silver deposition on 405 nm light-driven zinc oxide photocatalyst Seki S, Sekizawa T, Haga K, Sato T, Takeda M, Seki Y, Sawada Y, Yubuta K, Shishido T
194 - 197	Fabrication of large area ultrathin silicon membrane: Application for high efficiency extreme ultraviolet diffraction gratings Constancias C, Dalzotto B, Michallon P, Wallace J, Saib M
198 - 201	Magnetic soft x-ray imaging of vortex core dynamics Mesler BL, Buchanan K, Im MY, Anderson E, Fischer P
202 - 210	Scratch properties of nickel thin films using atomic force microscopy Tseng AA, Shirakashi J, Jou S, Huang JC, Chen TP
211 - 215	Indium oxide thin film transistors fabricated by low-energetic ion bombardment technique at room temperature Chu AK, Hong TI, Tien WC
216 - 216	Characterization of focused-ion-beam induced defect structures in graphite for the future guided self-assembly of molecules (vol 27, pg 2209, 2009) O'Donnell SE, Buttner M, Reinke P
C1A1 - C1A6	Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm Pelaz L, Marques LA, Aboy M, Santos I, Lopez P, Duffy R
C1B1 - C1B5	Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment Giubertoni D, Pepponi G, Sahiner MA, Kelty SP, Gennaro S, Bersani M, Kah M, Kirkby KJ, Doherty R, Foad MA, Meirer F, Streli C, Woicik JC, Pianetta P
C1C1 - C1C7	Nondestructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves Bogdanowicz J, Dortu F, Clarysse T, Vandervorst W, Rosseel E, Nguyen ND, Shaughnessy D, Salnik A, Nicolaides L
C1C8 - C1C14	Photovoltage versus microprobe sheet resistance measurements on ultrashallow structures Clarysse T, Moussa A, Parmentier B, Bogdanowicz J, Vandervorst W, Bender H, Pfeffer M, Schellenberger M, Nielsen PF, Thorsteinsson S, Lin R, Petersen D
C1D1 - C1D4	Plasma doping two-dimensional characterization using low energy x-ray emission spectroscopy and full wafer secondary ion mass spectrometry/angle-resolved x-ray electron spectroscopy techniques Qin S, Morinville W, Zhuang K, Fabreguette F, McTeer A, Hu YJ, Lu SF
C1D5 - C1D10	Electron holography for analysis of deep submicron devices: Present status and challenges Ikarashi N, Toda A, Uejima K, Yako K, Yamamoto T, Hane M, Sato H
C1E1 - C1E4	Dopant measurements in semiconductors with atom probe tomography Ronsheim PA, Hatzistergos M, Jin S
C1F1 - C1F5	Effect of n- and p-type dopants on patterned amorphous regrowth Morarka S, Rudawski NG, Law ME, Jones KS, Elliman RG
C1G1 - C1G6	Fluorine clustering and diffusion in silicon: Ab initio calculations and kinetic Monte Carlo model Vollenweider K, Sahli B, Zographos N, Zechner C
C1G7 - C1G11	Simulation of asymmetric doped high performance silicon on insulator metal oxide semiconductor field effect transistors for very large scale integrated complementary metal oxide semiconductor technologies Herrmann T, Flachowsky S, Illgen R, Klix W, Stenzel R, Hontschel J, Feudel T, Horstmann M
C1H1 - C1H4	Exploring doping options and variability of trigate transistors using atomistic process and device simulations Martin-Bragado I, Moroz V, Choi M
C1H5 - C1H13	Experimental studies of dose retention and activation in fin field-effect-transistor-based structures Mody J, Duffy R, Eyben P, Goossens J, Moussa A, Polspoel W, Berghmans B, van Dal MJH, Pawlak BJ, Kaiser M, Weemaes RGR, Vandervorst W
C1I1 - C1I11	Interaction of NiSi with dopants for metallic source/drain applications Luo J, Qiu ZJ, Zhang Z, Ostling M, Zhang SL
C1C15 - C1C20	Photoreflectance characterization of ultrashallow junction activation in millisecond annealing Chism W, Current M, Vartanian V
C1C21 - C1C26	Study of submelt laser induced junction nonuniformities using Therma-Probe Rosseel E, Bogdanowicz J, Clarysse T, Vandervorst W, Ortolland C, Hoffmann T, Salnik A, Nicolaides L, Han SH, Petersen DH, Lin R, Hansen O
C1C27 - C1C33	Review of electrical characterization of ultra-shallow junctions with micro four-point probes Petersen DH, Hansen O, Hansen TM, Boggild P, Lin R, Kjaer D, Nielsen PF, Clarysse T, Vandervorst W, Rosseel E, Bennett NS, Cowern NEB
C1C34 - C1C40	Sensitivity study of micro four-point probe measurements on small samples Wang F, Petersen DH, Hansen TM, Henriksen TR, Boggild P, Hansen O
C1C41 - C1C47	Electrical characterization of InGaAs ultra-shallow junctions Petersen DH, Hansen O, Boggild P, Lin R, Nielsen PF, Lin D, Adelmann C, Alian A, Merckling C, Penaud J, Brammertz G, Goossens J, Vandervorst W, Clarysse T
C1C48 - C1C53	Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants Merkulov A, Peres P, Choi S, Horreard F, Ehrke HU, Loibl N, Schuhmacher M
C1C54 - C1C58	Shallow As dose measurements of patterned wafers with secondary ion mass spectrometry and low energy electron induced x-ray emission spectroscopy Ehrke HU, Loibl N, Moret MP, Horreard F, Choi J, Hombourger C, Paret V, Benbalagh R, Morel N, Schuhmacher M
C1C59 - C1C64	Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon Pepponi G, Giubertoni D, Bersani M, Meirer F, Ingerle D, Steinhauser G, Streli C, Hoenicke P, Beckhoff B
C1C65 - C1C70	High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high-k layers Reading MA, van den Berg JA, Zalm PC, Armour DG, Bailey P, Noakes TCQ, Parisini A, Conard T, De Gendt S
C1C71 - C1C76	Application of the Storing Matter technique to the analysis of semiconductor materials Mansilla C, Wirtz T
C1C77 - C1C83	Comparative study of native oxide impacts on low energy doping processes Qin S, McTeer A, Zhuang K, Morinville W, Lu SF
C1C84 - C1C89	Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques Giubertoni D, Iacob E, Hoenicke P, Beckhoff B, Pepponi G, Gennaro S, Bersani M
C1D11 - C1D14	Quantitative dopant profiling of p-n junction in InGaAs/AlGaAs light-emitting diode using off-axis electron holography Chung S, Johnson SR, Ding D, Zhang YH, Smith DJ, McCartney MR
C1G12 - C1G17	Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors Flachowsky S, Illgen R, Herrmann T, Klix W, Stenzel R, Ostermay I, Naumann A, Wei A, Hontschel J, Horstmann M
C1G18 - C1G23	Kinetic lattice Monte Carlo simulations of interdiffusion in strained silicon germanium alloys Chen RY, Dunham ST
C1I12 - C1I16	Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing Illgen R, Flachowsky S, Herrmann T, Klix W, Stenzel R, Feudel T, Hontschel J, Horstmann M