Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.16, No.6 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (200 articles)

2915 - 2927	Electrical transport and far-infrared transmission in a quantum wire array Lefebvre J, Beerens J, Feng Y, Wasilewski Z, Beauvais J, Lavallee E
2928 - 2933	Luminescence from erbium implanted silicon-germanium quantum wells Huda MQ, Evans-Freeman JH, Peaker AR, Houghton DC, Nejim A
2934 - 2937	Optical absorption of Ag nanoclusters in Ag+-implanted c-SiO2 Feng XD, Tian MB, Liu ZX
2938 - 2941	Silicon nanopillars formed with gold colloidal particle masking Lewis PA, Ahmed H, Sato T
2942 - 2946	Detection and control of ferroelectric domains by an electrostatic force microscope Hong JW, Kahng DS, Shin JC, Kim HJ, Khim ZG
2947 - 2951	Atomistic study of nickel silicide structures on Si(100) by tunneling microscopy One I, Yoshimura M, Ueda K
2952 - 2956	Growth of silicon oxide on hydrogenated silicon during lithography with an atomic force microscope Marchi F, Bouchiat V, Dallaporta H, Safarov V, Tonneau D, Doppelt P
2957 - 2967	Plasma polymer films for 532 nm laser micromachining Silverstein MS, Visoly I, Kesler O, Janai M, Cassuto Y
2968 - 2973	Nonstatistical degradation and development characteristics of poly(methyrmethacrylate) based resists during electron beam exposure Uhl A, Bendig J, Leistner J, Jagdhold U, Bauch L, Bottcher M
2974 - 2976	Electrical conductivity measurement for quantitative evaluation of development speed of a photoresist Takeda T, Saka M
2977 - 2981	Fabrication of submicron suspended structures by laser and atomic force microscopy lithography on aluminum combined with reactive ion etching Boisen A, Birkelund K, Hansen O, Grey F
2982 - 2985	Submicrometer transmission mask fabricated by low-temperature SF6/O-2 reactive ion etching and focused ion beam Sheng HY, Fujita D, Ohgi T, Okamoto H, Nejoh H
2986 - 2995	Cleaning of CHF3 plasma-etched SiO2/SiN/Cu via structures using a hydrogen plasma, an oxygen plasma, and hexafluoroacetylacetone vapors Ueno K, Donnelly VM, Tsuchiya Y
2996 - 3002	Endpoint uniformity sensing and analysis in silicon dioxide plasma etching using in situ mass spectrometry Chambers JJ, Min K, Parsons GN
3003 - 3007	BCl3/Ar reactive ion etching for gate recessing of GaInP/InGaAs/GaAs pseudomorphic high electron mobility transistors Kuo CW, Su YK, Lin HH, Chin CY
3008 - 3012	Interaction between gas rarefaction and metal ionization in ionized physical vapor deposition Rossnagel SM
3013 - 3014	Atomically flat gold film surfaces deposited on Si (111) surfaces at room temperature Okamoto H, Nejo H
3015 - 3020	Correlation between the early stage of copper metal organic chemical vapor deposition and the material properties of thin film Hwang ES, Lee J
3021 - 3026	Properties of sputtered Cr-O and reactively sputtered Cr-N-O as passivation layers against copper oxidation Chuang JC, Chen MC
3027 - 3031	Role of V-shaped stacking faults in Au/n-type ZnMgSSe : Cl Schottky diodes Wang CW
3032 - 3040	Interface characterization of Si3N4/Si/GaAs heterostructures after high temperature annealing Park DG, Wang ZH, Morkoc H, Alterovitz SA, Smith DJ, Tsen SCY
3041 - 3047	Reduction of oxygen contamination in InGaP and AlGaInP films grown by solid source molecular beam epitaxy Hoke WE, Lemonias PJ, Torabi A
3048 - 3054	Surface chemistry of II-VI semiconductor ZnSe studied by time of flight secondary ion mass spectrometry and x-ray photoelectron spectroscopy Zhao J, Na MH, Lee EH, Chang HC, Gardella JA, Luo H
3055 - 3058	Evaluation of development speed of a photoresist by means of electrical conductivity measurement Takeda T, Saka M
3059 - 3064	Investigation of Ta-RuO2 diffusion barrier for high density memory capacitor applications Yoon DS, Baik HK, Lee SM, Park CS, Lee SI
3065 - 3068	Nonerratic behavior of overerased bits in flash EEPROM Nkansah FD, Prinz E, Hatalis M
3069 - 3072	Vacuum properties of a new panel structure for field emission displays Cho YR, Kim HS, Mun JD, Oh JY, Jeong HS, Ahn S
3073 - 3076	Effect of CH4 on the electron emission characteristics of active molybdenum field emitter arrays Chalamala BR, Wallace RM, Gnade BE
3077 - 3081	Easy and reproducible method for making sharp tips of Pt/Ir Lindahl J, Takanen T, Montelius L
3082 - 3085	Microelectron gun with silicon field emitter Endo Y, Honjo I, Goto S
3086 - 3096	Self-heating effects in a InP/CdS/LaS cold cathode Malhotra A, Modukuru Y, Cahay M
3097 - 3098	Experimental demonstration of the validity of accelerated radiation damage testing of x-ray mask materials Acosta RE, Rippstein R
3099 - 3104	Sputtering rate change and surface roughening during oblique and normal incidence O-2(+) bombardment of silicon, with and without oxygen flooding Magee CW, Mount GR, Smith SP, Herner B, Gossmann HJ
3105 - 3107	Ohmic contacts to p-type GaN using a Ni/Pt/Au metallization scheme Jang JS, Park KH, Jang HK, Kim HG, Park SJ
3108 - 3111	Thermally induced interface degradation in (100) and (111) Si/SiO2 analyzed by electron spin resonance Stesmans A, Afanas'ev VV
3112 - 3114	Enabling in situ atomic-scale characterization of epitaxial surfaces and interfaces Smathers JB, Bullock DW, Ding Z, Salamo GJ, Thibado PM, Gerace B, Wirth W
3126 - 3126	Papers from the 42nd International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Preface Marrian C
3127 - 3131	Atom Technology Project: Recent activities Tanaka K
3132 - 3136	Nanofabrication in cellular engineering Wilkinson CDW, Curtis ASG, Crossan J
3137 - 3141	Challenges and progress in x-ray lithography Silverman JP
3142 - 3149	Extreme ultraviolet lithography Gwyn CW, Stulen R, Sweeney D, Attwood D
3150 - 3153	Ion projection lithography: Status of the MEDEA project and United States European cooperation Gross G, Kaesmaier R, Loschner H, Stengl G
3154 - 3157	Critical issues in 157 nm lithography Bloomstein TM, Rothschild M, Kunz RR, Hardy DE, Goodman RB, Palmacci ST
3158 - 3163	Electron beam lithography process for advanced optical masks Hayashi N, Kurihara M, Segawa T, Yokoyama T, Abe T
3164 - 3167	EL5: One tool for advanced x-ray and chrome on glass mask making Sturans MA, Hartley JG, Pfeiffer HC, Dhaliwal RS, Groves TR, Pavick JW, Quickle RJ, Clement CS, Dick GJ, Enichen WA, Gordon MS, Kendall RA, Kostek CA, Pinckney DJ, Robinson CF, Rockrohr JD, Safran JM, Senesi JJ, Tressler EV
3168 - 3173	Distributed, multiple variable shaped electron beam column for high throughput maskless lithography Groves TR, Kendall RA
3174 - 3176	Multiplexed blanker array for parallel electron beam lithography Winograd GI, Han L, McCord MA, Pease RFW, Krishnamurthi V
3177 - 3180	High throughput electron lithography with the multiple aperture pixel by pixel enhancement of resolution concept Kruit P
3181 - 3184	Experimental evaluation of a miniature electrostatic thin-foil electron optical column for high current and low-voltage operation Winkler D, Bubeck CD, Fleischmann A, Knell G, Lutsch Y, Plies E
3185 - 3191	Micromachined ultrasharp silicon and diamond-coated silicon tip as a stable field-emission electron source and a scanning probe microscopy sensor with atomic sharpness Rangelow IW, Shi F, Hudek P, Grabiec P, Volland B, Givargizov EI, Stepanova AN, Obolenskaya LN, Mashkova ES, Molchanov VA
3192 - 3196	Patterned negative electron affinity photocathodes for maskless electron beam lithography Schneider JE, Sen P, Pickard DS, Winograd GI, McCord MA, Pease RFW, Spicer WE, Baum AW, Costello KA, Davis GA
3197 - 3201	Critical dimension control at stitched subfield boundaries in a high-throughput SCALPEL((R)) system Stanton ST, Liddle JA, Waskiewicz WK, Novembre AE
3202 - 3205	Pattern dependent alignment technique for mix-and-match electron-beam lithography with optical lithography Gotoh Y, Sohda Y, Saitou N, Tawa T, Matsuzaka T, Asai N, Hayano K, Hasegawa N
3206 - 3210	Electron-optical optimization for Gaussian, high-current, high-dose columns Mankos M, Veneklasen LH, Garcia R, Pearce-Percy H
3211 - 3214	Simulation of Coulomb interactions in electron beam lithography systems - A comparison of theoretical models Stickel W
3215 - 3220	Performance investigation of Coulomb interaction-limited high through put electron beam lithography based on empirical modeling Han LQ, McCord MA, Winograd GI, Pease RFW
3221 - 3226	Rigorous simulation of statistical electron-electron interactions with fast multipole acceleration and a network of workstations Wen VSH, Carmichael OT, Yamashita H, Neureuther AR
3227 - 3231	Mask electron modeling for Coulomb interaction by mask-scattered electrons in electron-beam projection lithography Yamashita H, Wen VSH, Neureuther AR, Nomura E
3232 - 3236	Optical data storage in LiF using electron beam encoding Caine EJ, Miller SD
3237 - 3240	Fabrication of electron beam generated, chirped, phase mask (1070.11-1070.66 nm) for fiber Bragg grating dispersion compensator Tiberio RC, Carr DW, Rooks MJ, Mihailov SJ, Bilodeau F, Albert J, Stryckman D, Johnson DC, Hill KO, McClelland AW, Hughes BJ
3241 - 3247	Experimental verification of the TEMPTATION (temperature simulation) software tool Babin S, Kuzmin IY
3248 - 3255	Lie algebraic aberration theory and calculation method for combined electron beam focusing-deflection systems Hu KY, Tang TT
3256 - 3261	Characterizing GHOST proximity effect correction effectiveness by determining the worst-case error Watson GP, Berger SD, Liddle JA
3262 - 3268	Accuracy and efficiency in election beam proximity effect correction Wind SJ, Gerber PD, Rothuizen H
3269 - 3274	Adaptive selection of control points for improving accuracy and speed of proximity effect correction Lee SY, Laddha J
3275 - 3278	Parallel and hierarchical postprocessing for variable spot electron beam lithography Dick GJ, Ganong AS
3279 - 3283	Mask bias requirement for 0.13 mu m e-beam block exposure lithography Takahashi K, Kanata H, Nara Y
3284 - 3288	Comparative study of AZPN114 and SAL601 chemically amplified resists for electron beam nanolithography Cui Z, Gerardino A, Gentili M, DiFabrizio E, Prewett PD
3289 - 3293	Comparison of negative resists for 100 nm electron-beam direct write and mask making applications Nordquist KJ, Resnick DJ, Ainley ES
3294 - 3297	Masked ion beam lithography with highly charged ions Gillaspy JD, Parks DC, Ratliff LP
3298 - 3300	Electronic desorption of alkyl monolayers from silicon by very highly charged ions Schenkel T, Schneider M, Hattass M, Newman MW, Barnes AV, Hamza AV, Schneider DH, Cicero RL, Chidsey CED
3301 - 3304	Red luminescence from a focused ion beam modified silicon surface Erickson LE, Schmuki P, Lockwood DJ
3305 - 3310	In situ Ga+ focused ion beam definition of high current density resonant tunneling diodes See P, Linfield EH, Arhone DD, Rose PD, Ritchie DA, Jones GAC
3311 - 3314	Study of precursor gases for focused ion beam insulator deposition Edinger K, Melngailis J, Orloff J
3315 - 3321	Influence of edge roughness in resist patterns on etched patterns Namatsu H, Nagase M, Yamaguchi T, Yamazaki K, Kurihara K
3322 - 3333	Dry development in an O-2/SO2 plasma for sub-0.18 mu m top layer imaging processes Goethals AM, Van Roey F, Sugihara T, Van den Hove L, Vertommen J, Klippert W
3334 - 3338	Can dry-etching systems be designed for low damage ab initio? Deng LG, Rahman M, Murad SK, Boyd A, Wilkinson CDW
3339 - 3343	Observation of the trajectories of particles in process equipment by an in situ monitoring system using a laser light scattering method Ito N, Moriya T, Uesugi F, Doi H, Sakamoto S, Hayashi Y
3344 - 3348	Fabrication of Cu interconnects of 50 nm linewidth by electron-beam lithography and high-density plasma etching Hsu Y, Standaert TEFM, Oehrlein GS, Kuan TS, Sayre E, Rose K, Lee KY, Rossnagel SM
3349 - 3353	Patterning of thin film NiMnSb using inductively coupled plasma etching Hong J, Caballero JA, Lambers ES, Childress JR, Pearton SJ
3354 - 3358	Metallization-induced damage in III-V semiconductors Chen CH, Hu EL, Schoenfeld WV, Petroff PM
3359 - 3363	Electrical and optical characteristics of etch induced damage in InGaAs Berg EW, Pang SW
3364 - 3366	Kinetics of Si growth by an electron-beam-irradiation technique using a Si2H6 source Hirose F, Sakamoto H
3367 - 3369	Plasma source for ion and electron beam lithography Lee Y, Gough RA, Leung KN, Vujic J, Williams MD, Zahir N, Fallman W, Tockler M, Bruenger W
3370 - 3373	Characteristics of focused beam spots using negative ion beams from a compact surface plasma source and merits for new applications Guharay SK, Sokolovsky E, Orloff J
3374 - 3379	Photoemission from gold thin films for application in multiphotocathode arrays for electron beam lithography Jiang XR, Berglund CN, Bell AE, Mackie WA
3380 - 3384	Lifetime and reliability results for a negative electron affinity photocathode in a demountable vacuum system Sen P, Pickard DS, Schneider JE, McCord MA, Pease RF, Baum AW, Costello KA
3385 - 3391	Electron scattering and transmission through SCALPEL masks Mkrtchyan MM, Liddle JA, Novembre AE, Waskiewicz WK, Watson GP, Harriott LR, Muller DA
3392 - 3397	Imaging interferometric lithography: A wavelength division multiplex approach to extending optical lithography Chen XL, Brueck SRJ
3398 - 3404	0.18 mu m KrF lithography using optical proximity correction based on empirical behavior modeling Tritchkov A, Stirniman J, Gangala H, Ronse K
3405 - 3410	Influences of off-axis illumination on optical lens aberration Smith BW, Petersen JS
3411 - 3414	Evaluation of a two-mask resolution enhancement technique White DL, Wood OR
3415 - 3418	Investigation of new overlay measurement marks for optical lithography Saito T, Watanabe H
3419 - 3421	Thermal annealing of deep ultraviolet (193 nm) induced compaction in fused silica Fan P, Oldham WG, Haller EE
3422 - 3425	Light-coupling masks: An alternative, lensless approach to high-resolution optical contact lithography Schmid H, Biebuyck H, Michel B, Martin OJF, Piller NB
3426 - 3429	Zone-plate-array lithography in the deep ultraviolet Djomehri IJ, Savas TA, Smith HI
3430 - 3434	At-wavelength detection of extreme ultraviolet lithography mask blank defects Jeong ST, Idir M, Lin Y, Johnson L, Rekawa S, Jones M, Denham P, Batson P, Levesque R, Kearney P, Yan PY, Gullikson E, Underwood JH, Bokor J
3435 - 3439	High-accuracy interferometry of extreme ultraviolet lithographic optical systems Goldberg KA, Naulleau P, Lee S, Bresloff C, Henderson C, Attwood D, Bokor J
3440 - 3443	Thermal-mechanical performance of extreme ultraviolet lithographic reticles Gianoulakis SE, Ray-Chaudhuri AK
3444 - 3448	Imaging properties of the extreme ultraviolet mask Bollepalli BS, Khan M, Cerrina F
3449 - 3455	Rigorous simulation of mask corner effects in extreme ultraviolet lithography Pistor TV, Adam K, Neureuther A
3456 - 3461	Aspheric collimator for a point source x-ray lithography system Singh-Gasson S, Vladimirsky Y, Cerrina F
3462 - 3465	Design study of compact beam lines for x-ray lithography Toyota E
3466 - 3470	Advanced synchrotron radiation stepper alignment system performance Sentoku K, Matsumoto T
3471 - 3475	Nanometer scattered-light alignment system using SiC x-ray masks with low optical transparency Miyatake T, Hirose M, Shoki T, Ohkubo R, Yamazaki K
3476 - 3479	Wafer chuck for magnification correction in x-ray lithography Feldman M, Smith D
3480 - 3484	Mask membrane deflection caused by mask tilt during the wafer stepping motion in x-ray steppers Uchida N
3485 - 3490	Overlay modeling for proximity x-ray lithography Chen AC
3491 - 3494	Properties of sputtered TaReGe used as an x-ray mask absorber material Yoshihara T, Kotsuji S, Fujii K, Tsuboi S, Suzuki K
3495 - 3499	Characteristics of Ta-based amorphous alloy film for x-ray mask absorbers Iba Y, Kumasaka F, Iizuka T, Aoyama H, Yamabe M
3500 - 3503	Temperature gradients during absorber etching and their effect on x-ray mask patterning Pendharkar SV, Resnick DJ, Laudon MF, Dauksher WJ, Mangat PJS, Seese PA, Cummings KD
3504 - 3508	Low-dose exposure technique for 100-nm-diam hole replication in x-ray lithography Fujii K, Tanaka Y, Taguchi T, Yamabe M, Suzuki K, Gomei Y, Hisatsugu T
3509 - 3514	130 nm and 150 nm line-and-space critical-dimension control evaluation using XS-1 x-ray stepper Tanaka Y, Taguchi T, Fujii K, Tsuboi S, Yamabe M, Suzuki K, Gomei Y, Hisatsugu T, Fukuda M, Morita H
3515 - 3520	Characterization of pattern geometrical effect on line end shortening in x-ray lithography Yi M, Seo Y, Seo E, Yang J, Lee K, Choi BK, Kim O
3521 - 3525	Edge diffraction enhanced printability in x-ray nanolithography Chen Y, Simon G, Haghiri-Gosnet AM, Carcenac F, Decanini D, Rousseaux F, Launois H
3526 - 3534	Recent developments in deep x-ray lithography Ehrfeld W, Schmidt A
3535 - 3538	Surface photochemistry induced by x-ray irradiation Rosenberg RA, Ma Q, Lai B, Mancini DC
3539 - 3542	Enhanced adhesion buffer layer for deep x-ray lithography using hard x rays De Carlo F, Song JJ, Mancini DC
3543 - 3546	Adhesion promotion between poly(methylmethacrylate) and metallic surfaces for LiGA evaluated by shear stress measurements Malek CGK, Das SS
3547 - 3551	Influence of developer temperature and resist material on the structure quality in deep x-ray lithography Pantenburg FJ, Achenbach S, Mohr J
3552 - 3557	Metrology study of structural transfer accuracy in fabrication of high-aspect-ratio microelectromechanical systems: From optical mask to polished electroplated parts Malek CK, Wood R, Dudley B, Genova P
3558 - 3562	Assessment of thermal loading-induced distortions in optical photomasks due to e-beam multipass patterning Shamoun B, Engelstad R, Trost D
3563 - 3566	Aerial image slope and proximity effects on critical dimensions in mask lithography Sagle A, Gesley M, Kao H, Innes R
3567 - 3571	Improving pattern placement using through-the-membrane signal monitoring Perkins FK, Marrian CRK, Peckerar MC
3572 - 3576	Pattern transfer on mask membranes Fisher AH, Engelstad RL, Lovell EG, Puisto DM
3577 - 3581	Etching processes and characteristics for the fabrication of refractory x-ray masks Lercel MJ, Brooks CJ, Benoit DE, Surendra M
3582 - 3586	Commercialization of SCALPEL masks Farrow RC, Novembre AE, Peabody M, Kasica R, Blakey M, Liddle JA, Werder K, DeMarco R, Ocola L, Rutberg L, Saunders T, Unruh J, Qian F, Smith M
3587 - 3591	Dynamic analysis of a SCALPEL mask during electron-beam exposure Semke WH, Engelstad RL, Lovell EG, Liddle JA
3592 - 3598	p-n junction-based wafer flow process for stencil mask fabrication Rangelow IW, Shi F, Volland B, Sossna E, Petrashenko A, Hudek P, Sunyk R, Butschke J, Letzkus F, Springer R, Ehrmann A, Gross G, Kaesmaier R, Oelmann A, Struck T, Unger G, Chalupka A, Haugeneder E, Lammer G, Loschner H, Tejeda R, Lovell E, Engelstad R
3599 - 3601	Fabrication of silicon stencil masks with vitreous carbon ion-absorbing coatings Ruchhoeft P, Wolfe JC, Wasson J, Torres J, Wu H, Nounu H, Liu N, Herbordt M, Morgan MD, Tiberio RC
3602 - 3605	Optimization of the temperature distribution across stencil mask membranes under ion beam exposure Kim B, Engelstad R, Lovell E, Chalupka A, Haugeneder E, Lammer G, Loschner H, Lutz J, Stengl G
3606 - 3611	Optically induced mask critical dimension error magnification in 248 nm lithography Randall JN, Tritchkov A
3612 - 3617	Characteristics of plasma enhanced chemical vapor deposition-grown SiNx films prepared for deep ultraviolet attenuated phase-shifting masks Chen HL, Wang LA, Hsu CW
3618 - 3624	Graphite-based x-ray masks for deep and ultradeep x-ray lithography Coane P, Giasolli R, De Caro F, Mancini DC, Desta Y, Gottert J
3625 - 3630	Optical probing of flip chip packaged microprocessors Paniccia M, Rao RM, Yee WM
3631 - 3636	Application of interferometric broadband imaging alignment on an experimental x-ray stepper Moon EE, Lee J, Everett PN, Smith HI
3637 - 3641	Performance of adaptive alignment method on asymmetric signals Chen X, Ghazanfarian AA, McCord MA, Pease RFW
3642 - 3646	Exploiting structure of wafer distortion in global alignment Ghazanfarian AA, Chen X, McCord MA, Fabian R, Pease W, Nguyen K, Levinson H
3647 - 3650	Phase shift microscopes Feldman M
3651 - 3654	Quantitation of latent resist images using photon tunneling microscopy Liddle JA, Johnson JA, Cirelli R, Mkrtchyan MM, Novembre AE, Peabody ML
3655 - 3660	Economical sampling algorithm using Fourier analysis for mapping wafer critical dimension variations Xu OY, Berglund CN, McCord MA, Pease RFW, Spence C, Liu HY
3661 - 3667	Evaluation of total uncertainty in the dimension measurements using critical-dimension measurement scanning electron microscopes Mizuno F, Shimizu M, Sasada K, Mizuno T, Yamada S
3668 - 3671	Whole film inspection using an extended source Aiyer A, Chau H
3672 - 3675	Scintillating global-fiducial grid for electron-beam lithography Goodberlet J, Carter J, Smith HI
3676 - 3683	Resist processes for hybrid (electron-beam deep ultraviolet) lithography Tedesco S, Mourier T, Dal'zotto B, McDougall A, Blanc-Coquant S, Quere Y, Paniez PJ, Mortini B
3684 - 3688	Negative electron-beam nanofabrication resist using acid-catalyzed protection of polyphenol provided by phenylcarbinol Uchino S, Yamamoto J, Migitaka S, Kojima K, Hashimoto M, Shiraishi H
3689 - 3694	Deep-ultraviolet interferometric lithography as a tool for assessment of chemically amplified photoresist performance Hinsberg W, Houle FA, Hoffnagle J, Sanchez M, Wallraff G, Morrison M, Frank S
3695 - 3700	Nanolithography in polymethylmethacrylate: An atomic force microscope study Dobisz EA, Brandow SL, Bass R, Shirey LM
3701 - 3704	Copolymer approach to charge-dissipating electron-beam resists Hupcey MAZ, Ober CK
3705 - 3708	Negative chemically amplified resist characterization for direct write and SCALPEL nanolithography Ocola LE, Biddick CJ, Tennant DM, Waskiewicz WK, Novembre AE
3709 - 3715	Chemically amplified resist processing with top coats for deep-ultraviolet and e-beam applications Petrillo K, Bucchignano J, Angelopoulos M, Cornett K, Brunsvold W
3716 - 3721	193 nm single layer resist strategies, concepts, and recent results Nalamasu O, Houlihan FM, Cirelli RA, Timko AG, Watson GP, Hutton RS, Kometani JM, Reichmanis E, Gabor A, Medina A, Slater S
3722 - 3725	Top surface imaging process and materials development for 193 nm and extreme ultraviolet lithography Rao V, Hutchinson J, Holl S, Langston J, Henderson C, Wheeler DR, Cardinale G, O'Connell D, Goldsmith J, Bohland J, Taylor G, Sinta R
3726 - 3729	Dissolution characteristics of chemically amplified 193 nm resists Itani T, Yoshino H, Hashimoto S, Yamana M, Miyasaka M, Tanabe H
3730 - 3733	Single layer chemical vapor deposition photoresist for 193 nm deep ultraviolet photolithography Nault M, Weidman T, Sugiarto D, Mui D, Lee C, Yang J
3734 - 3738	Resist design for resolution limit of KrF imaging towards 130 nm lithography Azuma T, Kawamura D, Matsunaga K, Shiobara E, Tanaka S, Onishi Y
3739 - 3743	Reduction of line edge roughness in the top surface imaging process Mori S, Morisawa T, Matsuzawa N, Kaimoto Y, Endo M, Matsuo T, Kuhara K, Sasago M
3744 - 3747	Pattern collapse in the top surface imaging process after dry development Mori S, Morisawa T, Matsuzawa N, Kaimoto Y, Endo M, Matsuo T, Kuhara K, Sasago M
3748 - 3751	Process dependence of roughness in a positive-tone chemically amplified resist He D, Cerrina F
3752 - 3758	Novel methodology for postexposure bake calibration and optimization based on electrical linewidth measurement and process metamodeling Capodieci L, Subramanian R, Rangarajan B, Heavlin WD, Li JW, Bernard DA, Boksha VV
3759 - 3766	Real-time Fourier transform infrared spectroscopy study of the kinetics of acid-catalyzed negative-tone resists based on hexamethoxymethylmelamine and phenolic resins Dentinger PM, Taylor JW
3767 - 3772	On-wafer photoacid determination and imaging technique for chemically amplified photoresists Dentinger PM, Lu B, Taylor JW, Bukofsky SJ, Feke GD, Hessman D, Grober RD
3773 - 3778	Electron-beam nanolithography, acid diffusion, and chemical kinetics in SAL-601 Dobisz EA, Fedynyshyn TN, Ma D, Shirey LM, Bass R
3779 - 3783	Modeling solvent diffusion in photoresist Mack CA, Mueller KE, Gardiner AB, Sagan JP, Dammel RR, Willson CG
3784 - 3788	Shot-noise and edge roughness effects in resists patterned at 10 nm exposure Rau N, Stratton F, Fields C, Ogawa T, Neureuther A, Kubena R, Willson G
3789 - 3794	Coulomb blockade devices fabricated by liquid metal ion source droplet deposition Vieu C, Pepin A, Gierak J, David C, Jin Y, Carcenac F, Launois H
3795 - 3799	Demonstration of a functional quantum-dot cellular automata cell Amlani I, Orlov AO, Snider GL, Lent CS, Bernstein GH
3800 - 3803	Fabrication of self-aligned metallic Coulomb blockade devices on Si nanowires Ford EM, Ahmed H
3804 - 3807	Direct patterning of single electron tunneling transistors by high resolution electron beam lithography on highly doped molecular beam epitaxy grown silicon films Koester T, Goldschmidtboeing F, Hadam B, Stein J, Altmeyer S, Spangenberg B, Kurz H, Neumann R, Brunner K, Abstreiter G
3808 - 3811	Double electron layer tunneling transistors by dual-side electron beam lithography Wendt JR, Simmons JA, Moon JS, Blount MA, Baca WE, Reno JL
3812 - 3816	Fabrication and characterization of buried subchannel implant n-metal-oxide-semiconductor transistors Wang W, McCarthy D, Park D, Ma D, Marrian C, Peckerar M, Goldsman N, Melngailis J, Berry IL
3817 - 3820	Microdisk laser structures for mode control and directional emission Backes SA, Cleaver JRA, Heberle AP, Kohler K
3821 - 3824	Measurement of nanomechanical resonant structures in single-crystal silicon Carr DW, Sekaric L, Craighead HG
3825 - 3829	Large area high density quantized magnetic disks fabricated using nanoimprint lithography Wu W, Cui B, Sun XY, Zhang W, Zhuang L, Kong LS, Chou SY
3830 - 3834	Fabrication of magnetic submicron-wire channels for the investigation of magnetization reversal Chen Y, Kottler V, Carcenac F, Rene JF, Essaidi N, Chappert C, Launois H
3835 - 3840	Monolithic nanofluid sieving structures for DNA manipulation Turner SW, Perez AM, Lopez A, Craighead HG
3841 - 3845	Using neutral atoms and standing light waves to form a calibration artifact for length metrology Thywissen JH, Johnson KS, Dekker NH, Chu AP, Prentiss M
3846 - 3849	Sharp edged silicon structures generated using atom lithography with metastable helium atoms Lu WJ, Baldwin KGH, Hoogerland MD, Buckman SJ, Senden TJ, Sheridan TE, Boswell RW
3850 - 3854	Absorptive masks of light: A useful tool for spatial probing in atom optics Keller C, Abfalterer R, Bernet S, Oberthaler MK, Schmiedmayer J, Zeilinger A
3855 - 3858	Atomic beam holography for nanofabrication Fujita J, Kisimoto T, Morinaga M, Matsui S, Shimizu F
3859 - 3863	Particle manipulation and surface patterning by laser guidance Renn MJ, Pastel R
3864 - 3873	Electron beam and scanning probe lithography: A comparison Wilder K, Quate CF, Singh B, Kyser DF
3874 - 3878	Approaches to nanofabrication on Si(100) surfaces: Selective area chemical vapor deposition of metals and selective chemisorption of organic molecules Abeln GC, Hersam MC, Thompson DS, Hwang ST, Choi T, Moore JS, Lyding JW
3879 - 3882	Nanolithography of metal films using scanning force microscope patterned carbon masks Muhl T, Bruckl H, Kraut D, Kretz J, Monch I, Reiss G
3883 - 3886	Modification of YBa2Cu3O7-delta wires using a scanning tunneling microscope: Process and electrical transport effects Bertsche G, Clauss W, Prins FE, Kern DP
3887 - 3890	Fabrication of high-density nanostructures by electron beam lithography Dial O, Cheng CC, Scherer A
3891 - 3893	Small aperture fabrication for single quantum dot spectroscopy Park D, Marrian CRK, Gammon D, Bass R, Isaacson P, Snow E
3894 - 3898	25 nm pitch GaInAs/InP buried structure: Improvement by calixarene as an electron beam resist and tertiarybutylphosphine as a P source in organometallic vapor phase epitaxy regrowth Miyamoto Y, Kokubo A, Hattori T, Hongo H, Suhara M, Furuya K
3899 - 3902	Focused ion-beam patterning of nanoscale ferroelectric capacitors Stanishevsky A, Aggarwal S, Prakash AS, Melngailis J, Ramesh R
3903 - 3905	Artificial dielectric optical structures: A challenge for nanofabrication Giaconia C, Torrini R, Murad SK, Wilkinson CDW
3906 - 3910	InGaAsP photonic band gap crystal membrane microresonators Scherer A, Painter O, D'Urso B, Lee R, Yariv A
3911 - 3916	Nanoscale freestanding gratings for ultraviolet blocking filters van Beek JTM, Fleming RC, Hindle PS, Prentiss JD, Schattenburg ML, Ritzau S
3917 - 3921	Problems of the nanoimprinting technique for nanometer scale pattern definition Scheer HC, Schulz H, Hoffmann T, Torres CMS
3922 - 3925	Multilayer resist methods for nanoimprint lithography on nonflat surfaces Sun XY, Zhuang L, Zhang W, Chou SY
3926 - 3928	Roller nanoimprint lithography Tan H, Gilbertson A, Chou SY
3929 - 3933	Nanolithography using wet etched silicon nitride phase mass Alkaisi MM, Blaikie RJ, McNab SJ
3934 - 3937	Regular array of Si nanopillars fabricated using metal clusters Tada T, Kanayama T
3938 - 3942	Oxidation properties of silicon dots on silicon oxide investigated using energy filtering transmission electron microscopy Single C, Zhou F, Heidemeyer H, Prins FE, Kern DP, Plies E
3943 - 3947	Fabrication of metallic point contacts: A new approach for devices with a multilayer or a heterointerface Gribov NN, Theeuwen SJCH, Caro J, van der Drift E, Tichelaar FD, de Kruijff TR, Hickey BJ
3948 - 3953	Fabrication of multipurpose piezoresistive Wheatstone bridge cantilevers with conductive microtips for electrostatic and scanning capacitance microscopy Gotszalk T, Radojewski J, Grabiec PB, Dumania P, Shi F, Hudek P, Rangelow IW