Thin Solid Films

Thin Solid Films, Vol.380, No.1-2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (76 articles)

1 - 1	Papers presented at the 2000 E-MRS Spring Conference, Symposium F: Thin films epitaxial growth and nanostructures - Strasbourg, France, 29 May-2 June 2000 - Preface Kasper E, Wang K, Hasegawa H
2 - 9	Nucleation and growth of self-assembled Ge/Si (001) quantum dots in single and stacked layers Le Thanh V, Yam V, Zheng Y, Bouchier D
10 - 14	Nanometric patterning with ultrathin twist bonded silicon wafers Fournel F, Moriceau H, Magnea N, Eymery J, Buttard D, Rouviere JL, Rousseau K, Aspar B
15 - 19	Growth-induced atomic step ordering on patterned and non-patterned Si(111) Omi H, Ogino T
20 - 24	Kinetic vs. strain-induced growth instabilities on vicinal Si(001) substrates Scheling C, Springholz G, Schaffler F
25 - 28	Interplay of dislocation network and island arrangement in SiGe films grown on Si(001) Teichert C, Hofer C, Lyutovich K, Bauer M, Kasper E
29 - 31	Boron surface phase on Si(111): atomic structure and Si overgrowth studied by scanning tunneling microscopy and work function measurement Stimpel T, Hoster HE, Schulze J, Baumgartner H, Eisele I
32 - 35	Ge growth mode modification on carbon-induced Si(001)-c(4 x 4) surfaces Stoffel M, Simon L, Bischoff JL, Aubel D, Kubler L, Castelein G
36 - 41	SiGe-based FETs: buffer issues and device results Herzog HJ, Hackbarth T, Hock G, Zeuner M, Konig U
42 - 45	Stranski-Krastanov growth of Si on SiC(0001) Fissel A, Akhtariev R, Richter W
46 - 50	Nucleation and evolution of Si1-xGex islands on Si(001) Volpi F, Portavoce A, Ronda A, Shi Y, Gay JM, Berbezier I
51 - 53	Optical and structural properties of Si/SiGe wires grown on patterned Si substrates Zhuang Y, Daniel A, Schelling C, Schaffler F, Bauer G, Grenzer J, Senz S
54 - 56	Growth study of surfactant-mediated relaxed SiGe graded layers for 1.55-mu m photodetector applications Liu JL, Radetic T, Tang YS, Teng D, Jin G, Luo YH, Wan J, Gronsky R, Wang KL
57 - 60	Doping and electrical characteristics of in-situ heavily B-doped Si1-x-yGexCy films epitaxially grown using ultraclean LPCVD Noda T, Lee D, Shim H, Sakuraba M, Matsuura T, Murota J
61 - 63	Monte Carlo simulation of steps behavior on Si(111) surface during sublimation Neizvestny IG, Shwartz NL, Yanovitskaja ZS, Zverev AV
64 - 66	Exclusion zone model of islands spatial distribution in molecular beam epitaxy Trofimov VI
67 - 70	Growth mode transitions and scaling behaviour at successive stages of molecular beam epitaxy Trofimov VI, Mokerov VG
71 - 74	Indium segregation kinetics in InGaAs ternary compounds Karpov SY, Makarov YN
75 - 77	Carbon segregation in silicon Oehme M, Bauer M, Parry CP, Eifler G, Kasper E
78 - 81	Effect of the bimodal size distribution on the optical properties of self-assembled Ge/Si(001) quantum dots Yam V, Le Thanh V, Compagnon U, Gennser U, Boucaud P, Debarre D, Bouchier D
82 - 85	Interlevel optical transitions and many-body effects in a dense array of Ge/Si quantum dots Yakimov AI, Dvurechenskii AV, Stepina NP, Nikiforov AI
86 - 88	Si/Ge-nanocrystals on SiC(0001) Hess G, Bauer A, Krausslich J, Fissel A, Schroter B, Richter W, Schell N, Matz W, Goetz K
89 - 91	MBE-growth of heteropolytypic low-dimensional structures of SiC Fissel A, Kaiser U, Schroter B, Krausslich J, Richter W
92 - 96	Investigation of the nucleation and growth of SiC nanostructures on Si Scharmann F, Maslarski P, Attenberger W, Lindner JKN, Stritzker B, Stauden T, Pezoldt J
97 - 100	Optical properties of self-assembled InAs quantum dots grown on GaAs(211)A substrate Sugimura A, Ohnishi K, Umezu I, Vaccaro PO
101 - 104	InAs/GaAs multiple quantum dot structures grown by LP-MOVPE Pangrac J, Oswald J, Hulicius E, Melichar K, Vorlicek V, Drbohlav I, Simecek T
105 - 107	Crystallographic dependence of OMVPE InGaAs/InP lateral growth on patterned (100) InP substrates prepared by wet etching Elias P, Hasenojhrl S, Cambel V, Kostic I
108 - 110	Interface structure in the growth of semiconductor crystals using the Bridgman-Stockbarger method Balint AM, Mihailovici M, Baltean DG, Balint S
111 - 113	Diffusion-induced step decoration of Co on Ag(001) Degroote B, Pattyn H, Degroote S, Vantomme A, Dekoster J, Langouche G
114 - 116	Effect of the co-deposition of Sb and Si on surface morphology Jernigan GG, Thompson PE
117 - 119	Effect of stress on interface transformation in thin semiconducting layers Bak-Misiuk J, Domagala J, Misiuk A, Sadowski J, Zytkiewicz ZR, Trela J, Antonova IV
120 - 123	Selective and non-selective growth by GSMBE/ULPCVD for heterojunction bipolar transistors Breton G, Woods N, Graoui H, Harris JJ, Zhang J
124 - 126	Self-assembled growth and magnetotransport investigations on strained Si/SiGe multilayers on vicinal (113)-Si surfaces Neumann R, Zhu J, Brunner K, Abstreiter G
127 - 129	Comparison of epitaxial growth of CoSi2 among Co/Ti, Co/Hf, and Co/Nb bilayers on(100)Si Kwon YJ, Lee C
130 - 133	Temperature and excitation power dependencies of the photoluminescence of planar and vertically self-organized Si0.70Ge0.30/Si strained superlattices Bozzo S, Lazzari JL, Bremond G, Derrien J
134 - 136	Atomic-layer doping in Si by alternately supplied PH3 and SiH4 Shimamune Y, Sakuraba M, Matsuura T, Murota J
137 - 141	Correlation between magnetic and transport properties of Co/Ir/Co sandwiches and surface roughness Colis S, Schmerber G, Dinia A
142 - 144	Excited states of two-dimensional hole gas at the Al0.5Ga0.5As/GaAs interface Bryja L, Stern O, Kubisa M, Ryczko K, Bayer M, Misiewicz J, Forchel A, Hansen OP
145 - 150	Epitaxial Si-based tunnel diodes Thompson PE, Hobart KD, Twigg ME, Rommel SL, Jin N, Berger PR, Lake R, Seabaugh AC, Chi P
151 - 153	Physics and applications of Si/SiGe/Si resonant interband tunneling diodes Duschl R, Eberl K
154 - 157	Vertical MOS-gated pin-diodes: MOS-gated tunneling transistors in Si(100) and Si(111) Schulze J, Fink C, Sulima T, Eisele I, Hansch W
158 - 163	In situ RHEED control of self-organized Ge quantum dots Nikiforov AI, Cherepanov VA, Pchelyakov OP, Dvurechenskii AV, Yakimov AI
164 - 168	Sb segregation in Si and SiGe: effect on the growth of self-organised Ge dots Portavoce A, Volpi F, Ronda A, Gas P, Berbezier I
169 - 172	Cooperative arrangement of self-assembled Ge dots on pre-grown Si mesas Jin G, Liu JL, Luo YH, Wang KL
173 - 175	Ge-Si intermixing in Ge quantum dots on Si Boscherini F, Capellini G, Di Gaspare L, De Seta M, Rosei F, Sgarlata A, Motta N, Mobilio S
176 - 179	Nucleation of Ge quantum dots on the C-alloyed Si(001) surface Leifeld O, Beyer A, Muller E, Grutzmacher D, Kern K
180 - 182	Intra-valence band photocurrent measurements on Ge quantum dots in Si Miesner C, Brunner K, Abstreiter G
183 - 188	Self-assembling InAs and InP quantum dots for optoelectronic devices Eberl K, Lipinski M, Manz YM, Jin-Phillipp NY, Winter W, Lange C, Schmidt OG
189 - 191	Origin of non-uniformity in MBE grown nanometer-sized InGaAs ridge quantum wires and its removal by atomic hydrogen-assisted cleaning Muranaka T, Jiang C, Ito A, Hasegawa H
192 - 194	Optically-induced charge storage in self-assembled InAs quantum dots Heinrich D, Hoffmann J, Finley JJ, Zrenner A, Bohm G, Abstreiter G
195 - 197	MBE grown InGaN quantum dots and quantum wells: effects of in-plane localization Dalmasso S, Damilano B, Grandjean N, Massies J, Leroux M, Reverchon JL, Duboz JY
198 - 200	Piezoelectric effects in InAs/GaAs(N11) self-assembled quantum dots Sanguinetti S, Gurioli M, Grilli E, Guzzi M, Henini M
201 - 203	Growth of patterned thin epitaxial CoSi2-films by a titanium oxide mediated epitaxy process Kluth PC, Detavernier C, Zhao QT, Xu J, Bochem HP, Lenk S, Mantl S
204 - 206	SiGe/Si hetero-field-effect-transistor with PN-junction gate Seiler U, Hachbarth T, Herzog HJ
207 - 210	MBE-grown vertical power-MOSFETs with 100-nm channel length Fink C, Anil KG, Hansch W, Sedlmaier S, Schulze J, Eisele I
211 - 214	Giant magnetoresistance increase in a hard-soft spin valve structure with the growth of a semiconductor layer Guth M, Colis S, Schmerber G, Dinia A
215 - 217	Magnetic-field tuning of the alloy-induced disorder in quaternary semimagnetic (Zn, Cd, Mn)Se quantum well structures Falk H, Klar PJ, Heimbrodt W
218 - 220	Hole transport due to shallow acceptors along boron doped SiGe quantum wells Altukhov IV, Kagan MS, Sinis VP, Thomas SG, Wang KL, Blom A, Odnoblyudov MO
221 - 223	Electronic properties of WS2 monolayer films Klein A, Tiefenbacher S, Eyert V, Pettenkofer C, Jaegermann W
224 - 226	Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures Sanguinetti S, Padovani M, Gurioli M, Grilli E, Guzzi M, Vinattieri A, Colocci M, Frigeri P, Franchi S, Lazzarini L, Salviati G
227 - 229	Admittance spectroscopy of Ge quantum dots in Si Asperger T, Miesner C, Brunner K, Abstreiter G
230 - 232	Capacitance-conductance investigation on the phase transitions in Ga nanoparticles Tognini P, Parravicini GB, Stella A, Fornari L, Kofman R, Cheyssac P, Giardini ME
233 - 236	InAs/GaAs lasers with very thin active layer Oswald J, Hulicius E, Pangrac J, Melichar K, Simecek T, Petricek O, Vancura M, Hradil J
237 - 239	Terahertz emission of SiGe/Si quantum wells Kagan MS, Altukhov IV, Sinis VP, Thomas SG, Wang KL, Chao KA, Yassievich IN
240 - 242	Photoreflectance spectroscopy of InGaAsN/GaAs quantum wells grown by MB Sek G, Ryczko K, Misiewicz J, Fischer M, Reinhardt M, Forchel A
243 - 245	Photoreflectance study of delta-doped semiconductor layers by a fast Fourier transformation Nowaczyk M, Sek G, Misiewicz J, Sciana B, Radziewivz D, Tlaczala M
246 - 248	Photoluminescence of carbon-induced Ge islands in silicon Beyer A, Leifeld O, Muller E, Stutz S, Sigg H, Grutzmacher D
249 - 251	Interface control of InGaAs/AlAsSb heterostructures Mozume T, Georgiev N
252 - 255	Raman spectra of TiN/AlN superlattices Bernard M, Deneuville A, Thomas O, Gergaud P, Sandstrom P, Birch J
256 - 258	Probe microanalysis investigation and electroreflectance spectroscopy of Hg1-xCdxTePLD films on silicon patterned substrates Gorbach TY, Matveeva LA, Smertenko PS, Svechnikov SV, Venger EF, Kuzma M, Wisz G, Ciach R, Rakowska A
259 - 262	MBE Si regrowth on carbon-induced Si(001)-c(4 x 4) reconstructions studied by RHEED Stoffel M, Simon L, Bischoff JL, Aubel D, Kubler L
263 - 265	Quasi van der Waals epitaxy of ZnSe on the layered chalcogenides InSe and GaSe Wisotzki E, Klein A, Jaegermann W
266 - 268	Effect of substrate temperature on the structural and magnetic properties of Fe/Ag superlattices Chemam F, Bouabellou A, Halimi R
269 - 275	Thin film analysis via accelerator-based nuclear methods Lieb KP
276 - 281	Perspectives of the concept of van der Waals epitaxy: growth of lattice mismatched GaSe (0001) films on Si(111), Si(110) and Si(100) Jaegermann W, Rudolph R, Klein A, Pettenkofer C
282 - 284	Interface structure at the large misfit, still common epitaxy beta-FeSi2(101) or (110)//Si(111) Gemelli M, Miglio L