Electrochemical and Solid State Letters

Electrochemical and Solid State Letters, Vol.14, No.1 Entire volume, number list

ISSN: 1099-0062 (Print)

In this Issue (34 articles)

A1 - A5	Enhanced Electrochemical Performance of Li[Li0.2Ni0.2Mn0.6]O-2 Modified by Manganese Oxide Coating for Lithium-Ion Batteries Zhao YJ, Zhao CS, Feng HL, Sun ZQ, Xia DG
A6 - A9	Al Current Collectors for Li-Ion Batteries Made via an Oxidation Process in Ionic Liquids Lecoeur C, Tarascon JM, Guery C
B1 - B5	A Highly Conductive Oxide Anode for Solid Oxide Fuel Cells Smith BH, Gross MD
B6 - B8	Enhanced Photoelectrochemical Performance of Photoanode Fabricated Using Polystyrene Ball Embedded TiO2 Pastes Chen JZ, Hsu YC, Cheng IC
B9 - B12	A Process to Synthesize (Mn,Co)(3)O-4 Spinel Coatings for Protecting SOFC Interconnect Alloys Lewis MJ, Zhu JH
C1 - C3	Quantifying the Metal Nickel Enrichment on Stainless Steel Olsson COA, Malmgren S, Gorgoi M, Edstrom K
D1 - D4	Electrochemical Quartz Crystal Microbalance Studies of Gold Oxidation in Cyanide Baths Liu ZW, Wu J, West AC
D5 - D9	Combinational Approach of Electrochemical Etching and Metal-Assisted Chemical Etching for p-Type Silicon Wire Formation Jang HS, Choi HJ, Oh BY, Kim JH
E1 - E3	Rhenium(VII) Recovery Via Electro-oxidation Process Molaei R, Shariat MH, Zakeri AR, Boutorabi MA
G1 - G3	Fast Domain Wall Switching in a Thin Ferroelectric Polymer Layer Son JY, Shin YS, Shin YH, Lee EK, Jang HM
G4 - G7	Characterization on Bandedge Electronic Structure of MgO Added Bi1.5Zn1.0Nb1.5O7 Gate Dielectrics for ZnO-Thin Film Transistors Cho NG, Seo H, Kim DH, Kim HG, Kim J, Kim ID
H1 - H4	Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3 Dingemans G, Terlinden NM, Pierreux D, Profijt HB, van de Sanden MCM, Kessels WMM
J1 - J3	Low Voltage-Driven CMOS Circuits Based on SiOG Choi MH, Choi JW, Park SH, Choi WJ, Mativenga M, Jang J, Mruthyunjaya R, Tredwell TJ, Mozdy E, Williams CK
J4 - J7	CO2 Sensor Combining an MISiC Capacitor and a Binary Carbonate Inoue H, Andersson M, Yuasa M, Kida T, Spetz AL, Shimanoe K
K1 - K4	Ultrafast Initial Growth Rate of Self-Assembled TiO2 Nanorod Arrays Fabricated by Ti Anodization Chang YH, Lin HW, Chen C
K5 - K7	Physical and Electrical Properties of Single Zn2SnO4 Nanowires Karthik KRG, Andreasson BP, Sun C, Pramana SS, Varghese B, Sow CH, Mathews N, Wong LH, Mhaisalkar SG
K8 - K11	An Electrochemical Investigation on the Adhesion of As-Formed Anodic TiO2 Nanotubes Grown in Organic Solvents Miraghaei S, Ashrafizadeh F, Raeissi K, Santamaria M, Di Quarto F
P1 - P4	First-Principles Prediction of Optical Absorption Enhancement for Si Native Defect Clusters under Biaxial Strain Bondi RJ, Lee S, Hwang GS
D10 - D12	Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition Eom TK, Kim SH, Park KS, Kim S, Kim H
D13 - D15	Through-Hole Filling by Copper Electroplating Using a Single Organic Additive Dow WP, Liu DH, Lu CW, Chen CH, Yan JJ, Huang SM
II5 - II8	Penetration Effects of High-Energy Protons in GaN: A Micro-Raman Spectroscopy Study Kim HY, Freitas JA, Kim J
II9 - II12	Filament-Type Resistive Switching in Homogeneous Bi-Layer Pr0.7Ca0.3MnO3 Thin Film Memory Devices Liu X, Biju KP, Bourim E, Park S, Lee W, Lee D, Seo K, Hwang H
II13 - II16	Bipolar Conduction in SnO Thin Films Hosono H, Ogo Y, Yanagi H, Kamiya T
II17 - II20	High-Performance Poly-Si TFTs of Top-Gate with High-kappa Metal-Gate Combine the Laser Annealed Channel and Glass Substrate Lu YH, Chien CH, Kuo PY, Yang MJ, Lin HY, Chao TS
II21 - II23	Charge Trapping of HfLaTaON-Gated Metal-Oxide-Semiconductor Capacitors with Various Tantalum Concentrations Cheng CL, Tsai HY
II24 - II26	Thick Microporous Silicon Layers Etching Involving p(+)n Back Side Hole Injection in Highly Resistive n-Type Substrates Coudron L, Gautier G, Morillon B, Kouassi S, Defforge T, Ventura L
II27 - II29	Resistive Switching Behavior in the Ru/Y2O3/TaN Nonvolatile Memory Device Pan TM, Chen KM, Lu CH
II30 - II32	Impact of Strain Layer on Gate Leakage and Interface-State for nMOSFETs Fabricated by Stress-Memorization Technique Liao CC, Lin MC, Chiang TY, Chao TS
II33 - II35	Efficiency Improvement of Solution Processed Blue Phosphorescent Organic Light-Emitting Diodes Using an Alcohol Soluble Exciton Blocking Layer Yook KS, Jeon SO, Lee JY
II36 - II38	Improved Thermal Stability Performance of an MHEMT with a Double delta-Doped Structure Huang CC, Liu YJ, Chen TY, Hsu CS, Kao CI, Liuz WC
II39 - II41	Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing Hellings G, Rosseel E, Simoen E, Radisic D, Petersen DH, Hansen O, Nielsen PF, Zschatzsch G, Nazir A, Clarysse T, Vandervorst W, Hoffmann TY, De Meyer K
II42 - II45	Impact of Surface Preparation on Ni(Pt) Silicide Oxidation Huang JY, Yeo KL, Kumar A, Seet CS
II46 - II49	Role of Charged Species on the Growth of GaN Films by Modified Activated Reactive Evaporation Biju KP, Meher SR, Jain MK
II50 - II52	Temperature Influence on Nanocrystals Embedded High-k Nonvolatile C-V Characteristics Yang CH, Kuo Y, Lin CH, Kuo W