Solid-State Electronics

Solid-State Electronics, Vol.46, No.11 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (46 articles)

1669 - 1669	12th Bi-annual Conference on Insulating Films on Semiconductors (INFOSs 2001) - June 20-22, 2001, Udine, Italy - Foreword Sangiorgi E
1671 - 1677	Mist deposited high-k dielectrics for next generation MOS gates Lee DO, Roman P, Wu CT, Mumbauer P, Brubaker M, Grant R, Ruzyllo J
1679 - 1685	Chemical and electronic structure of ultrathin zirconium oxide films on silicon as determined by photoelectron spectroscopy Miyazaki S, Narasaki M, Ogasawara M, Hirose M
1687 - 1697	A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys Lucovsky G, Whitten JL, Zhang Y
1699 - 1707	Narrow-channel effects and their impact on the static and floating-body characteristics of STI- and LOCOS-isolated SOI MOSFETs Pretet J, Ioannou D, Subba N, Cristoloveanu S, Maszara W, Raynaud C
1709 - 1713	Transient effects in PD SOI MOSFETs and potential DRAM applications Okhonin S, Nagoga M, Sallese JM, Fazan P, Faynot O, Pontcharra J, Cristoloveanu S, van Meer H, De Meyer K
1715 - 1721	Monte Carlo simulation of electron mobility in silicon-on-insulator structures Gamiz F, Roldan JB, Lopez-Villanueva JA, Cartujo-Cassinello P, Jimenez-Molinos F
1723 - 1727	Fabrication of single-electron transistors and circuits using SOIs Ono Y, Yamazaki K, Nagase M, Horiguchi S, Shiraishi K, Takahashi Y
1729 - 1737	Memory properties of Si+ implanted gate oxides: from MOS capacitors to nvSRAM von Borany J, Gebel T, Stegemann KH, Thees HJ, Wittmaack M
1739 - 1747	A new high injection efficiency non-volatile memory cell: BipFlash Esseni D, Selmi L, Bez R, Modelli A
1749 - 1756	Modeling of anomalous SILC in flash memories based on tunneling at multiple defects Ielmini D, Spinelli AS, Lacaita AL, Modelli A
1757 - 1763	NROM (TM) - a new technology for non-volatile memory products Bloom I, Pavan P, Eitan B
1765 - 1773	Reliability implications in advanced embedded two-transistor-Fowler-Nordheim-NOR flash memory devices Scarpa A, Tao G, Dijkstra J, Kuper FG
1775 - 1785	Hydrogen-related hole capture and positive charge build up in buried oxides Rivera A, van Veen A, Schut H, de Nijs JMM, Balk P
1787 - 1798	Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides Wu E, Sune J, Lai W, Nowak E, McKenna J, Vayshenker A, Harmon D
1799 - 1805	Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices Johnson RS, Hong JG, Hinkle C, Lucovsky G
1807 - 1813	Low frequency current noise in unstressed/stressed thin oxide metal-oxide-semiconductor capacitors Crupi F, Iannaccone G, Ciofi C, Neri B, Lombardo S, Pace C
1815 - 1823	Proton trapping in SiO2 layers thermally grown on Si and SiC Afanas'ev VV, Ciobanu F, Pensl G, Stesmans A
1825 - 1837	Quantitative two-step hydrogen model of SiO2 gate oxide breakdown Sune J, Wu E
1839 - 1847	Relation between hole traps and hydrogenous species in silicon dioxides Zhang JF, Zhao CZ, Sii HK, Groeseneken G, Degraeve R, Ellis JN, Beech CD
1849 - 1854	Oxide thickness extraction methods in the nanometer range for statistical measurements Leroux C, Ghibaudo G, Reimbold G, Clerc R, Mathieu S
1855 - 1862	Ultrathin SiO2 layers formation by ultraslow single- and multicharged ions Borsoni G, Le Roux V, Laffitte R, Kerdiles S, Bechu N, Vallier L, Korwin-Pawlowski ML, Vannuffel C, Bertin F, Vergnaud C, Chabli A, Wyon C
1863 - 1872	Non-radiative recombination at reconstructed Si surfaces Dittrich T, Bitzer T, Rada T, Timoshenko VY, Rappich J
1873 - 1878	Energetics of oxygen species in crystalline and amorphous SiO2: a first-principles investigation Bongiorno A, Pasquarello A
1879 - 1885	Extraction of deep trap parameters from photocurrent transients by two-dimensional spectral analysis Pawlowski M
1887 - 1898	Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si Atanassova E, Novkovski N, Paskaleva A, Pecovska-Gjorgjevich M
1899 - 1906	A numerical study of ballistic transport in a nanoscale MOSFET Rhew JH, Ren ZB, Lundstrom MS
1907 - 1912	Suppression of parasitic JFET effect in trench IGBTs by using a self-aligned p base process Yuan X, Trajkovic T, Udrea F, Thomson J, Waind PR, Taylor P, Amaratunga GAJ
1913 - 1918	Electron emission yield of induced photoemission effect in thin ITO layers Olesik J, Olesik Z
1919 - 1924	Influence of the topology on thermal dissipation in high power density GaAs devices Camps T, Marty A, Tasselli J, Bailbe JP, Souverain P
1925 - 1932	Device and circuit performance of SiGe/Si MOSFETs Badcock SG, O'Neill AG, Chester EG
1933 - 1939	Analysis of thermal noise in scaled MOS devices and RF circuits Spedo S, Fiegna C
1941 - 1943	Modeling of abnormal capacitance-voltage characteristics observed in MOS transistor with ultra-thin gate oxide Hsu YL, Fang YK, Tsao FC, Kuo FJ, Ho Y
1945 - 1948	The effect of indium tin oxide as an ohmic contact for the 850 nm GaAs oxide-confined VCSELs Jiang WJ, Wu MC, Yu HC, Huang CY, Sung CP, Chi JY
1949 - 1952	Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source Hsieh WT, Fang YK, Ting SF, Tsair YS, Lee WJ, Wang HP
1953 - 1957	Turn-off operation of a 2.6 kV 4H-SiC gate turn-off thyristor in MOS-gate mode Levinshtein ME, Mnatsakanov TT, Yurkov SN, Ivanov PA, Tandoev AG, Agarwal AK, Palmour JW
1959 - 1963	Study of the reactive ion etching of 6H-SiC and 4H-SiC in SF6/Ar plasmas by optical emission spectroscopy and laser interferometry Camara N, Zekentes K
1965 - 1974	Breakdown and stress-induced oxide degradation mechanisms in MOSFETs Chen JH, Wei CT, Hung SM, Wong SC, Wang YH
1975 - 1981	High temperature characteristics of Ti/Al and Cr/Al ohmic contacts to n-type GaN Papanicolaou NA, Zekentes K
1983 - 1989	Effects of Si-cap layer thinning and Ge segregation on the characteristics of Si/SiGe/Si heterostructure pMOSFETs Song YJ, Lim JW, Kim SH, Bae HC, Kang JY, Park KW, Shim KH
1991 - 1995	On the capacitance of metal/high-k dielectric material stack/silicon structures Jiang J, Awadelkarim OO, Lee DO, Roman P, Ruzyllo J
1997 - 2000	The effect of vertical emitter ballasting resistors on the emitter current crowding effect in heterojunction bipolar transistors Chang YC, Du GT, Song JF, Wang SW, Luo HL, Ge WK, Wang JN, Wang Y
2001 - 2008	Modeling the zero and forward bias operation of PIN diodes for high-frequency applications Drozdovski NV, Drozdovskaia LM, Caverly RH, Quinn MJ
2009 - 2011	An expression for the uncertainty introduced by the discrete sampling of a solar cell's J-V curve McIntosh KR, Clark JD
2013 - 2016	A novel approach to quantitative determination of charge trapping near channel/drain edge in MOSFETs Chen TP, Huang JY, Tse MS, Zeng X
2017 - 2017	GaN-based modulation doped FETs and UV detectors (vol 46, pg 157, 2002) Morkoc H, Di Carlo A, Cingolani R