913 - 918 |
Electron transport and emission properties of diamond Yater JE, Shih A, Abrams R |
919 - 921 |
Carbon based thin film cathodes for field emission displays Weber A, Hoffmann U, Klages CP |
922 - 925 |
Field emission characteristics of patterned free-standing diamond films Kim SH, Han IT |
926 - 931 |
Surface and intergallery catalytic properties of Cu(II)-exchanged hectorite : A scanning force microscope study Porter TL, Manygoats K, Bradley M, Eastman MP, Reynolds BP, Votava AE, Hagerman ME |
932 - 936 |
Study of the desorption mechanism of alkylsiloxane self-assembled monolayers through isotopic labeling and high resolution electron energy-loss spectroscopy experiments Kluth GJ, Sander M, Sung MM, Maboudian R |
937 - 942 |
Comparison of the initial oxidation of polycrystalline indium and ultrathin deposits of indium on the Au(111) surface Robinson MC, Slavin AJ |
943 - 947 |
Adsorption of oxygen on Pd(111) : Precursor kinetics and coverage-dependent sticking Sjovall P, Uvdal P |
948 - 950 |
State resolved dynamics of methyl desorption from GaAs Wang H, Zhu XY, Xin QS |
951 - 955 |
Atomic force microscopy and scanning tunneling microscopy/spectroscopy investigations of molybdenum ditellurides Saidi A, Hasbach A, Raberg W, Wandelt K |
956 - 960 |
Electronic structure calculations of small molecule adsorbates on (110) and (100) TiO2 Ferris KF, Wang LQ |
961 - 963 |
Surface cleaning aluminum foil with ozone gas Momose T, Hayasaka E, Saitou K, Nagayama K, Abe S |
964 - 967 |
Atomic force microscopy study of the faceting on MgO(110) surface Chern G, Huang JJ, Leung TC |
968 - 973 |
Atomic force microscopy study of microcrystalline SiC fabricated by ion beam synthesis Wu W, Chen DH, Xu JB, Cheung WY, Wong SP, Wilson IH, Kwok RWM |
974 - 978 |
Ellipsometric and low energy electron diffraction study of the layer growth of xenon physisorbed on Ag(111) surface Igarashi S, Abe Y, Irie Y, Hirayama T, Arakawa I |
979 - 983 |
Desorption of metastable particles induced by electronic excitation at the surface of rare-gas solid with physisorbed hydrogen Hayama A, Kuninobu T, Hirayama T, Arakawa I |
984 - 989 |
Ammonia decomposition on Ru(001) using gas-phase atomic hydrogen Hagedorn CJ, Weiss MJ, Weinberg WH |
990 - 995 |
Novel electronic and magnetic properties of ultrathin chromium oxide films grown on Pt(111) Robbert PS, Geisler H, Ventrice CA, van Ek J, Chaturvedi S, Rodriguez JA, Kuhn M, Diebold U |
996 - 999 |
Coadsorption of sodium and water on MgO(100)/Mo(100) studied by ultraviolet photoelectron and metastable impact electron spectroscopies Gunster J, Liu G, Kempter V, Goodman DW |
A39 - A39 |
Vacuum, surfaces, and films - Papers from the 44th National Symposium of the American Vacuum Society, Part I - Preface Lucovsky G |
1000 - 1005 |
Oxygen adsorption and oxide formation on Ni3Al(111) Becker C, Kandler J, Raaf H, Linke R, Pelster T, Drager M, Tanemura M, Wandelt K |
1006 - 1009 |
Voltage-dependent scanning tunneling microscopy images of the Ge(111)-c(2x8) surface Lee G, Mai H, Chizhov I, Willis RF |
1010 - 1013 |
Carbon monoxide oxidation on Ir(110) Burghaus U, Ding JQ, Weinberg WH |
1014 - 1016 |
A fast x-ray photoelectron spectroscopy study of the NO-H-2 reaction over Rh(533) : Identifying surface species Cobden PD, Nieuwenhuys BE, Esch F, Baraldi A, Comelli G, Lizzit S, Kiskinova M |
1017 - 1022 |
Near edge x-ray absorption fine structure study of benzene adsorbed on metal surfaces : Comparison to benzene cluster complexes Weiss K, Gebert S, Wuhn M, Wadepohl H, Woll C |
1023 - 1030 |
Vibrational study of CH2 and CH3 radicals on the Cu(111) surface by high resolution electron energy loss spectroscopy Chan YL, Chuang P, Chuang TJ |
1031 - 1036 |
Scanning tunneling microscopy study of benzene adsorption on Si(100)-(2x1) Self KW, Pelzel RI, Owen JHG, Yan C, Widdra W, Weinberg WH |
1037 - 1042 |
Multiple bonding geometries and binding state conversion of benzene/Si(100) Lopinski GP, Fortier TM, Moffatt DJ, Wolkow RA |
1043 - 1046 |
Surface segregation of low-energy ion-induced defects in Si Bedrossian PJ, de la Rubia TD |
1047 - 1049 |
Lateral manipulation of single Cu atoms on flat and stepped copper surfaces Bartels L, Meyer G, Rieder KH |
1050 - 1054 |
Photoexcited Fe2O3 surfaces : Properties and chemisorption Toledano DS, Dufresne ER, Henrich VE |
1055 - 1058 |
Surface structure and bonding in the strongly correlated metal oxides NiO and UO2 Castell MR, Dudarev SL, Muggelberg C, Sutton AP, Briggs GAD, Goddard DT |
1059 - 1065 |
Scanning tunneling microscopy of equilibrium crystal shapes Surnev S, Arenhold K, Coenen P, Voigtlander B, Bonzel HP, Wynblatt P |
1066 - 1072 |
Reaction of 1,2-ethanedithiol on clean, sulfur-modified, and carbon-modified Mo(110) surfaces Roe CL, Schulz KH |
1073 - 1077 |
Bonding nature between oxygen and sodium on Si(113) surface Hwang CC, An KS, Park RJ, Kim JS, Lee JB, Park CY, Kimura A, Kakizaki A |
1078 - 1085 |
Nonstoichiometry on TiO2(110) and Cu-TiO2 interfaces Wagner M, Kienzle O, Bonnell DA, Ruhle M |
1086 - 1090 |
Photoelectron microspectroscopy observations of a cleaved surface of semiconductor double heterostructure Kiyokura T, Maeda F, Watanabe Y, Kadota Y, Iketaki Y, Horikawa Y, Oshima M, Shigemasa E, Yagishita A |
1091 - 1095 |
Auger electron spectroscopy depth profiling of Ge/Si multilayers using He+ and Ar+ ions Menyhard M, Sulyok A |
1096 - 1102 |
Determination and application of the depth resolution function in sputter profiling with secondary ion mass spectroscopy and Auger electron spectroscopy Hofmann S, Schubert J |
1103 - 1105 |
Tungsten silicide composition analysis by Rutherford backscattering spectroscopy, Auger electron spectroscopy, and x-ray photoelectron spectroscopy Bradbury CA, Fillmore DK |
1106 - 1111 |
Quantitative uses of the x-ray photoelectron spectroscopy valence band region in the analysis of polymer blends Thomas EA, Fulghum JE |
1112 - 1116 |
Valence band x-ray photoelectron spectroscopic investigation of surface cleanliness of aluminum metal and its alloys Havercroft NJ, Sherwood PMA |
1117 - 1121 |
Ellipsomicroscopy for surface imaging : A novel tool to investigate surface dynamics Haas G, Pletcher TD, Bonilla G, Jachimowski TA, Rotermund HH, Lauterbach J |
1122 - 1126 |
Two-dimensional imaging of surface morphology by energy-analyzed secondary electrons and Auger electron spectroscopy for stepped Si(111) surfaces Suzuki M, Mogi K, Homma Y |
1127 - 1130 |
A plasma-polymerized protective film for transmission electron microscopy specimen preparation by focused ion beam etching Kato NI, Miura N, Tsutsui N |
1131 - 1136 |
Measurement and control of sticking probability of H2O on stainless steel surfaces Shiokawa Y, Ichikawa M |
1137 - 1138 |
Design of a low cost, low magnetic susceptibility, ultrahigh vacuum compatible, flanged electrical break Mapes M, Hseuh HC, Cameron P |
1139 - 1144 |
Design and pumping characteristics of a compact titanium-vanadium non-evaporable getter pump Li YL, Hess D, Kersevan R, Mistry N |
1145 - 1150 |
Measurements of the helium propagation at 4.4 K in a 480 m long stainless steel pipe Hseuh HC, Wallen E |
1151 - 1156 |
Turbomolecular pump design for high pressure operation Spagnol M, Cerruti R, Helmer J |
1157 - 1162 |
Miniature quadrupole residual gas analyzer for process monitoring at milliTorr pressures Holkeboer DH, Karandy TL, Currier FC, Frees LC, Ellefson RE |
1163 - 1168 |
Stable cancellation of x-ray errors in Bayard-Alpert gauges Kendall BRF, Drubetsky E |
1169 - 1171 |
Application of calculated physical adsorption isotherms to a radon sensor Hobson JP, Appleby A, Kim IS, Sigel GH |
1172 - 1177 |
The morphology of duplex and quadruplex DNA on mica Muir T, Morales E, Root J, Kumar I, Garcia B, Vellandi C, Jenigian D, Marsh T, Henderson E, Vesenka J |
1178 - 1182 |
Numerical simulation of the evolution of nanometer-scale surface topography generated by ion milling Winningham TA, Zou Z, Douglas K, Clark NA |
1183 - 1188 |
Cell-based sensor microelectrode array characterized by imaging x-ray photoelectron spectroscopy, scanning electron microscopy, impedance measurements, and extracellular recordings Jung DR, Cuttino DS, Pancrazio JJ, Manos P, Cluster T, Sathanoori RS, Aloi LE, Coulombe MG, Czamaski MA, Borkholder DA, Kovacs GTA, Bey P, Stenger DA, Hickman JJ |
1189 - 1195 |
Real-time monitoring of scattered laser light by a single particle of several tens of nanometers in the etching chamber in relation to its status with the equipment Uesugi F, Ito N, Moriya T, Doi H, Sakamoto S, Hayashi Y |
1196 - 1200 |
Pit-free electropolishing of aluminum and its application for process chamber Tajiri K, Saito Y, Yamanaka Y, Kabeya Z |
1201 - 1206 |
Self-consistent particle simulation of radio-frequency CF4 discharge with implementation of all ion-neutral reactive collisions Denpoh K, Nanbu K |
1207 - 1212 |
Studies on structural, electrical, compositional, and mechanical properties of WSix thin films produced by low-pressure chemical vapor deposition Santucci S, Lozzi L, Passacantando M, Picozzi P, Petricola P, Moccia G, Alfonsetti R, Diamanti R |
1213 - 1217 |
Properties of ZnO : In film prepared by sputtering of facing ZnO : In and Zn targets Tominaga K, Umezu N, Mori I, Ushiro T, Moriga T, Nakabayashi I |
1218 - 1221 |
P-type transparent conducting In2O3-Ag2O thin films prepared by rf magnetron sputtering Minami T, Shimokawa K, Miyata T |
1222 - 1226 |
Reemission of sputtered refractory metals during deposition Tait RN |
1227 - 1232 |
X-ray photoelectron spectroscopy characterization of the oxidation of electroplated and sputter deposited copper surfaces Apen E, Rogers BR, Sellers JA |
1233 - 1238 |
Texture and surface morphology improvement of Al by two-stage chemical vapor deposition and its integration in an Al plug-interconnect scheme for sub 0.25 mu m metallization Naik M, Guo T, Chen L, Mosely R, Beinglass I |
1239 - 1243 |
Submicron contacts for electrical characterization of semiconducting WS2 thin films Ballif C, Regula M, Levy F, Burmeister F, Schafle C, Matthes T, Leiderer P, Niedermann P, Gutmannsbauer W, Bucher R |
1244 - 1246 |
Control of the preferred orientation of AlN thin films by collimated sputtering Rodriguez-Navarro A, Otano-Rivera W, Pilione LJ, Messier R, Garcia-Ruiz JM |
1247 - 1250 |
Generation of vapor stream using a porous rod in an electron beam evaporation process Ohba H, Shibata T |
1251 - 1257 |
Effects of CdCl2 treatment on the recrystallization and electro-optical properties of CdTe thin films Moutinho HR, Al-Jassim MM, Levi DH, Dippo PC, Kazmerski LL |
1258 - 1261 |
Microstructure-dependent ferroelectric properties of SrBi2Ta2O9 thin films fabricated by radio frequency magnetron sputtering Cho KJ, Lee JK, Jung HJ, Park JW |
1262 - 1267 |
X-ray photoelectron spectroscopy study of TiN films produced with tetrakis(dimethylamido)titanium and selected N-containing precursors on SiO2 Endle JP, Sun YM, White JM, Ekerdt JG |
1268 - 1271 |
Large magnetoresistance effect in as-grown epitaxial LaxCa1-xMnO3 films prepared by a molecular beam epitaxy coevaporation technique Miniotas A, Karlsson UO, Brazdeikis A, Chu CW |
1272 - 1276 |
Hardness enhancement by compositionally modulated structure of Ti/TiN multilayer films Kusano E, Kitagawa M, Nanto H, Kinbara A |
1277 - 1285 |
Computer modeling as a tool to predict deposition rate and film composition in the reactive sputtering process Berg S, Nyberg T, Blom HO, Nender C |
1286 - 1292 |
Modeling of the deposition of stoichiometric Al2O3 using nonarcing direct current magnetron sputtering Macak K, Nyberg T, Macak P, Olsson MK, Helmersson U, Berg S |
1293 - 1296 |
Atomistic simulations of organic thin film deposition through hyperthermal cluster impacts Qi LF, Sinnott SB |
1297 - 1302 |
Determining thickness of thin metal films with spectroscopic ellipsometry for applications in magnetic random-access memory Tompkins HG, Zhu T, Chen E |
1303 - 1310 |
In situ sputter deposition discharge diagnostics for tailoring ceramic film growth Aita CR |
1311 - 1315 |
Growth of SiC and SiCxNy films by pulsed laser ablation of SiC in Ar and N-2 environments Soto G, Samano EC, Machorro R, Cota L |
1316 - 1320 |
Plasma enhanced selective area microcrystalline silicon deposition on hydrogenated amorphous silicon : Surface modification for controlled nucleation Smith LL, Read WW, Yang CS, Srinivasan E, Courtney CH, Lamb HH, Parsons GN |
1321 - 1326 |
Synergetic effects in ion beam energy and substrate temperature during hyperthermal particle film deposition Marton D, Boyd KJ, Rabalais JW |
1327 - 1330 |
Seeded pulsed supersonic molecular beam growth of silicon carbide thin films Jamison KD, Kempel ML, Ballarotto VW, Kordesch ME |
1331 - 1335 |
Cubic boron nitride thin film deposition by unbalanced magnetron sputtering and dc pulsed substrate biasing Otano-Rivera W, Pilione LJ, Zapien JA, Messier R |
1336 - 1341 |
Structural and magnetic properties of Fe/Rh(001) sputter deposited multilayers Tomaz MA, Harp GR, Mayo E, Lederman D, Wu R, O'Brien WL |
1342 - 1347 |
Co on stepped Cu(100) surfaces : A comparison of experimental data with Monte Carlo growth simulations Coyle ST, Scheinfein MR, Blue JL |
1348 - 1354 |
Characterization and photoemission dichroism of epitaxially grown Gd(0001)/Y(0001) Mishra SR, Cummins TR, Waddill GD, Goodman KW, Tobin JG, Gammon WJ, Sherwood T, Pappas DP |
1355 - 1358 |
Directly identifying the order of layer switching in magnetic multilayers Freeland JW, Chakarian V, Idzerda YU, Doherty S, Zhu JG, Wende H, Kao CC |
1359 - 1363 |
Comparison of X-ray magnetic circular dichroism at the L and M edges of Mo, Ru, Rh, and Pd Tomaz MA, Lin T, Harp GR, Hallin E, Sham TK, O'Brien WL |
1364 - 1367 |
Magnetization of ultrathin Fe films deposited on Gd (0001) Sherwood TS, Mishra SR, Popov AP, Pappas DP |
1368 - 1373 |
Quantum-well states in high-quality Cu films deposited on Co (100) : A high resolution photoemission study Segovia P, Michel EG, Ortega JE |
1374 - 1379 |
Magnetic nanostructures produced by electron beam patterning of direct write transition metal fluoride resists Streblechenko D, Scheinfein MR |
1380 - 1383 |
Biaxially oriented conductive La0.5Sr0.5CoO3 thin films on SiO2/Si Jia QX, Arendt PN, Kwon C, Roper JM, Fan Y, Groves JR, Foltyn SR |
1384 - 1387 |
Analysis of B-SiO2 films by highly charged ion based time-of-flight secondary ion mass spectrometry, standard secondary ion mass spectrometry and elastic recoil detection Schenkel T, Hamza AV, Barnes AV, Schneider DH, Walsh DS, Doyle BL |
1388 - 1393 |
Sharing of Auger electron spectroscopy and x-ray photoelectron spectroscopy spectral data through the Internet Yoshihara K, Yoshitake M |
1394 - 1401 |
The birth of electronics : Thermionic emission and vacuum Redhead PA |
1403 - 1408 |
Doping scheme of semiconducting atomic chains Yamada T |
1409 - 1413 |
Characterization of zinc implanted silica : Effects of thermal annealing and picosecond laser radiation Chen JL, Mu R, Ueda A, Wu MH, Tung YS, Gu Z, Henderson DO, White CW, Budai JD, Zuhr RA |
1414 - 1419 |
Numerical study on near field imaging of fluorescence decay of near-surface molecule cluster Xiao MF |
1420 - 1424 |
Interference in far-field radiation of two contra-propagating surface plasmon polaritons in the Kretchmann configuration Xiao MF, Machorro R, Siqueiros J |
1425 - 1429 |
Imaging and direct manipulation of nanoscale three-dimensions features using the noncontact atomic force microscope Ramachandran TR, Madhukar A, Chen P, Koel BE |
1430 - 1434 |
The use of a Si-based resist system and Ti electrode for the fabrication of sub-10 nm metal-insulator-metal tunnel junctions Wada T, Haraichi S, Ishii K, Hiroshima H, Komuro M, Gorwadkar SM |
1435 - 1439 |
Observation of channel shortening in n-metal-oxide-semiconductor field-effect transistors arising from interconnect plasma processing El Hassan MG, Awadelkarim OO, Werking J |
1440 - 1443 |
Evaluation of plasma charging damage during polysilicon gate etching process in a decoupled plasma source reactor Ma SM, Jain M, Chinn JD |
1444 - 1448 |
Probe diagnostics in a full wave resonator radio-frequency discharge Vinogradov GK, Menagarishvili VM, Yoneyama S |
1449 - 1453 |
Dynamic images of plasma processes : Use of Fourier blobs for endpoint detection during plasma etching of patterned wafers Rietman EA, Lee JTC, Layadi N |
1454 - 1458 |
Effect of upper hybrid waves on uniform electron cyclotron resonance plasmas Ueda Y, Kawai Y |
1459 - 1463 |
Role of gas feed delivery and dilutent on oxide etching in an inductively coupled plasma etch system Lercel MJ, Dang D, Marmillion N, Mlynko W |
1464 - 1468 |
Characterization of the etch rate non-uniformity in a magnetically enhanced reactive ion etcher Buie MJ, Pender JTP, Dahimene M |
1469 - 1472 |
Passivation role of fluorine on the anticorrosion of AlCu films after plasma etching Baek KH, Kim CI, Kwon KH, Kim TH, Chang EG, Yun SJ, Yoon YS, Kim SG, Nam KS |
1473 - 1477 |
Hydrogen and disilane adsorption on low energy ion-roughened Si(100) Gong B, Jo S, Hess G, Parkinson P, Ekerdt JG |
1478 - 1482 |
Etch characteristics of GaN using inductively coupled Cl-2/Ar and Cl-2/BCl3 plasmas Lee YH, Kim HS, Yeom GY, Lee JW, Yoo MC, Kim TI |
1483 - 1488 |
Effects of argon addition to a platinum dry etch process Milkove KR, Coffin JA, Dziobkowski C |
1489 - 1496 |
Study of platinum electrode patterning in a reactive ion etcher Chang LH, Apen E, Kottke M, Tracy C |
1497 - 1501 |
Comparison of plasma chemistries for inductively coupled plasma etching of InGaAlP alloys Hong J, Lee JW, Abernathy CR, Lambers ES, Pearton SJ, Shul RJ, Hobson WS |
1502 - 1508 |
Deep-submicron trench profile control using a magnetron enhanced reactive ion etching system for shallow trench isolation Yeon CK, You HJ |
1509 - 1513 |
Characterization of low dielectric constant plasma enhanced chemical vapor deposition fluorinated silicon oxide films as intermetal dielectric materials Kim K, Kwon DH, Nallapati G, Lee GS |
1514 - 1518 |
Contact etch scaling with contact dimension McNevin SC, Cerullo M |
1519 - 1524 |
Flow rate rule for high aspect ratio SiO2 hole etching Chinzei Y, Ogata M, Shindo H, Ichiki T, Horiike Y |
1525 - 1528 |
Stability of Si-O-F low-K dielectrics : Attack by water molecules as function of near-neighbor Si-F bonding arrangements Yang H, Lucovsky G |
1529 - 1536 |
Magnetically neutral loop discharged plasma sources and system Uchida T |
1537 - 1541 |
Large-area high-density plasma excitation using standing pure and hybrid surface waves Ghanashev I, Nagatsu M, Morita S, Sugai H |
1542 - 1546 |
High-rate etching of GaAs using chlorine atmospheres doped with a Lewis acid Franz G |
1547 - 1551 |
Surface chemistry and damage in the high density plasma etching of gallium arsenide Leonhardt D, Eddy CR, Shamamian VA, Holm RT, Glembocki OJ, Butler JE |
1552 - 1559 |
Proposal for an etching mechanism of InP in CH4-H-2 mixtures based on plasma diagnostics and surface analysis Feurprier Y, Cardinaud C, Grolleau B, Turban G |
1560 - 1565 |
Spatially-averaged model for plasma etch processes : Comparison of different approaches to electron kinetics Ahlrichs P, Riedel U, Warnatz J |
1566 - 1570 |
Visualization of etching mechanisms of a vicinal Cu surface using scanning tunneling microscopy Nakakura CY, Altman EI |
1571 - 1576 |
Halogen uptake by thin SiO2 layers on exposure to HBr/O-2 and Cl-2 plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy Donnelly VM, Layadi N |
1577 - 1581 |
Evaluation of trifluoroacetic anhydride as an alternative plasma enhanced chemical vapor deposition chamber clean chemistry Pruette LC, Karecki SM, Reif R, Langan JG, Rogers SA, Ciotti RJ, Felker BS |
1582 - 1587 |
Ultrahigh-selectivity silicon nitride etch process using an inductively coupled plasma source Wang Y, Luo L |
1588 - 1593 |
Suppression of notching by lowering the bias frequency in electron cyclotron resonance plasma with a divergent magnetic field Morioka H, Matsunaga D, Yagi H |
1594 - 1599 |
SiO2 etching in magnetic neutral loop discharge plasma Chen W, Itoh M, Hayashi T, Uchida T |
1600 - 1603 |
Magnetic field optimization in a dielectric magnetically enhanced reactive ion etch reactor to produce an instantaneously uniform plasma Lindley RA, Bjorkman CH, Shan H, Ke KH, Doan K, Mett RR, Welch M |
1604 - 1608 |
Dielectric etching for 0.18 mu m technologies Berruyer P, Vinet F, Feldis H, Blanc R, Lerme M, Morand Y, Poiroux T |
1609 - 1614 |
Doping of group III nitrides Ploog KH, Brandt O |
1615 - 1620 |
Ultrahigh vacuum arcjet nitrogen source for selected energy epitaxy of group III nitrides by molecular beam epitaxy Grunthaner FJ, Bicknell-Tassius R, Deelman P, Grunthaner PJ, Bryson C, Snyder E, Giuliani JL, Apruzese JP, Kepple P |
1621 - 1626 |
Selective inductively coupled plasma etching of group-III nitrides in Cl-2- and BCl3-based plasmas Shul RJ, Willison CG, Bridges MM, Han J, Lee JW, Pearton SJ, Abernathy CR, MacKenzie JD, Donovan SM, Zhang L, Lester LF |
1627 - 1630 |
Effect of atomic hydrogen on Er luminescence from AlN Pearton SJ, Abernathy CR, MacKenzie JD, Hommerich U, Zavada JM, Wilson RG, Schwartz RN |
1631 - 1635 |
Comparison of inductively coupled plasma Cl-2 and Cl-4/H-2 etching of III-nitrides Cho H, Vartuli CB, Donovan SM, Abernathy CR, Pearton SJ, Shul RJ, Constantine C |
1636 - 1640 |
Electrical, optical, and structural properties of indium-tin-oxide thin films deposited on polyethylene terephthalate substrates by rf sputtering Kulkarni AK, Lim T, Khan M, Schulz KH |
1641 - 1645 |
Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction Smith AR, Ramachandran V, Feenstra RM, Greve DW, Shin MS, Skowronski M, Neugebauer J, Northrup JE |
1646 - 1649 |
Enhanced Schottky barrier on InGaAs for high performance photodetector application He L, Costello MJ, Cheng KY, Wohlert DE |
1650 - 1653 |
Growth of GaS on GaAs(100) surfaces using the [(Bu-t)GaS](4) molecular precursor in ultrahigh vacuum Yi SI, Chung CH, Weinberg WH |
1654 - 1657 |
Analytic representations of the dielectric functions of crystalline and amorphous Si and crystalline Ge for very large scale integrated device and structural modeling Leng J, Opsal J, Chu H, Senko M, Aspnes DE |
1658 - 1663 |
Spectroscopic and thermal studies of a-SiC : H film growth : Comparison of mono-, tri-, and tetramethylsilane Lee MS, Bent SF |
1664 - 1669 |
Gate leakage current : A sensitive characterization parameter for plasma-induced damage detection in ultrathin oxide submicron transistors Jiang J, Awadelkarim OO, Werking J |
1670 - 1675 |
Ultrathin Ta2O5 film growth by chemical vapor deposition of Ta(N(CH3)(2))(5) and O-2 on bare and SiOxNy-passivated Si(100) for gate dielectric applications Son KA, Mao AY, Kim BY, Liu F, Pylant ED, Hess DA, White JM, Kwong DL, Roberts DA, Vrtis RN |
1676 - 1679 |
Pulsed supersonic molecular beam growth of AlN Ballarotto VW, Kordesch ME |
1680 - 1685 |
Octadecyltrichlorosilane self-assembled-monolayer islands as a self-patterned-mask for HF etching of SiO2 on Si Komeda T, Namba K, Nishioka Y |
1686 - 1691 |
Transition metal nitride formed by simultaneous physisorption and thermal evaporation; TiN/Si(100) Ahn S, Han JY, Seo JM |
1692 - 1696 |
Measurements of epitaxially grown Pt/CaF2/Si(111) structures by ballistic electron emission microscopy and scanning tunneling microscopy LaBella VP, Shusterman Y, Schowalter LJ, Ventrice CA |
1697 - 1701 |
Development of electron cyclotron resonance and inductively coupled plasma high density plasma etching for patterning of NiFe and NiFeCo Jung KB, Lambers ES, Childress JR, Pearton SJ, Jenson M, Hurst AT |
1702 - 1709 |
Effects of "processing parameters" in plasma deposition : Acrylic acid revisited Candan S, Beck AJ, O'Toole L, Short RD |
1710 - 1715 |
Surface studies of plasma source ion implantation treated polystyrene Lee Y, Han SH, Lee JH, Yoon JH, Lim HE, Kim KJ |
1716 - 1720 |
Real-time core-level spectroscopy of initial thermal oxide on Si(110) Enta Y, Miyanishi Y, Irimachi H, Niwano M, Suemitsu M, Miyamoto N, Shigemasa E, Kato H |
1721 - 1729 |
Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing Lucovsky G, Niimi H, Wu Y, Parker CR, Hauser JR |
1730 - 1734 |
Second-harmonic generation at the interface between Si(100) and thin SiO2 layers Cundiff ST, Knox WH, Baumann FH, Evans-Lutterodt KW, Green ML |
1735 - 1740 |
Localized degradation studies of ultrathin gate oxides Wen HJ, Ludeke R |
1741 - 1744 |
Nanoscale scratch resistance of ultrathin protective overcoats on hard magnetic disks Anoikin EV, Yang MM, Chao JL, Elings JR, Brown DW |
1745 - 1749 |
Study of substrate bias effect on corrosion susceptibility sf thin film magnetic disks by accelerated chemical tests Wang CC, Chia RWJ, Lee JK, Tang WT |
1750 - 1756 |
Carbon overcoat composition and structure analysis by secondary ion mass spectrometry Erickson JW, Sheng J, Gao Y, Pham H, Singer IL |
1757 - 1761 |
Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers Claflin B, Binger M, Lucovsky G |
1762 - 1766 |
Secondary ion mass spectroscopy characterization of the deuterium sintering process for enhanced-lifetime complementary metal-oxide-semiconductor transistors Lee J, Aur S, Eklund R, Hess K, Lyding JW |
1767 - 1771 |
Hydrogen in silicon : Fundamental properties and consequences for devices Van de Walle CG |
1772 - 1774 |
Effects of surface phosphorus on the kinetics of hydrogen desorption from silane-adsorbed Si(100) surface at room temperatures Suemitsu M, Tsukidate Y, Nakazawa H, Enta Y |
1775 - 1778 |
Formation of periodic step and terrace structure on Si(100) surface during annealing in hydrogen diluted with inert gas Kumagai Y, Namba K, Komeda T, Nishioka Y |
1779 - 1784 |
Use of reactive ion sputtering to produce clean germanium surfaces in a carbon rich environment - an ion scattering study Smentkowski VS, Holecek JC, Schultz JA, Krauss AR, Gruen DM |
1785 - 1789 |
Temperature-programmed desorption and high-resolution electron energy loss spectroscopy studies of the interaction of water with the GaAs(001)-(4x2) surface Chung CH, Yi SI, Weinberg WH |
1790 - 1793 |
First principles calculations of the different structures of a monolayer of Sb on Si (111) Takeuchi N |
1794 - 1800 |
Pseudo spin valve magnetoresistive random access memory Everitt BA, Pohm AV |
1801 - 1805 |
Magnetoresistance of NiMnSb-based multilayers and spin valves Caballero JA, Park YD, Childress JR, Bass J, Chiang WC, Reilly AC, Pratt WP, Petroff F |
1806 - 1811 |
Hybrid ferromagnet-semiconductor devices Johnson M |
1812 - 1816 |
Giant magnetoresistance behavior of granular Fe and Co implanted Ag thin films Soares JC, Redondo LM, de Jesus CM, Marques JG, da Silva MF, de Azevedo MMP, Mendes JA, Rogalski MS, Sousa JB |
1817 - 1819 |
Fabrication and domain imaging of iron magnetic nanowire arrays Tulchinsky DA, Kelley MH, McClelland JJ, Gupta R, Celotta RJ |
1820 - 1824 |
Spectroscopic ellipsometry investigation of nickel silicide formation by rapid thermal process Hu YZ, Tay SP |
1825 - 1831 |
Comparison of the submicron particle analysis capabilities of Auger electron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy with energy dispersive x-ray spectroscopy for particles deposited on silicon wafers with 1 mu m thick oxide layers Diebold AC, Lindley P, Viteralli J, Kingsley J, Liu BYH, Woo KS |
1832 - 1837 |
Investigation of ice-solid interfaces by force microscopy : Plastic flow and adhesive forces Pittenger B, Cook DJ, Slaughterbeck CR, Fain SC |
1838 - 1841 |
Photoluminescence quenching of Alq(3) by metal deposition : A surface analytical investigation Choong VE, Park Y, Gao Y, Mason MG, Tang CW |
1842 - 1851 |
Developments in equipment support technology Sullivan JJ, Gwizdak R, Gu Y, Culwell W, Baker JM, Hosch JW |
1852 - 1856 |
Silane consumption and conversion analysis in amorphous silicon and silicon nitride plasma deposition using in situ mass spectroscopy Chowdhury AI, Klein TM, Anderson TM, Parsons GN |
1857 - 1862 |
Use of the quartz crystal microbalance to measure the mass of submonolayer deposits : Measuring the stoichiometry of surface oxides Narine SS, Slavin AJ |
1863 - 1867 |
Film properties of Ti/TiN bilayers deposited sequentially by ionized physical vapor deposition Cerio F, Drewery J, Huang E, Reynolds G |
1868 - 1872 |
Composition central by current modulation in dc-reactive sputtering Nyberg T, Nender C, Berg S |
1873 - 1879 |
Simulations of BCl3/Cl-2 plasma in an inductively coupled gaseous reference cell Choi SJ, Veerasingam R |
1880 - 1884 |
Film growth of nanostructured C-N/TiNx multilayers reactively sputtered in pure nitrogen Jensen H, Sobota J, Sorensen G |
1885 - 1889 |
Diffusion bonding of steel to Ti-6Al-4V to produce hard wearing surface layers Church SC, Wild RK |
1890 - 1900 |
Recent developments in the design, deposition, and processing of hard coatings Zabinski JS, Voevodin AA |
1901 - 1906 |
Effect of temperature on Ti and TiN films deposited on a BN substrate Seal S, Underwood H, Uda M, Osawa H, Kanai A, Barr TL, Benko E, Krauss A, Perera RCC |
1907 - 1911 |
Synthesis, composition, surface roughness and mechanical properties of thin nitrogenated carbon films Chan WC, Zhou BZ, Chung YW, Lee CS, Lee ST |
1912 - 1916 |
Characteristics of amorphous and polycrystalline silicon films deposited at 120 degrees C by electron cyclotron resonance plasma-enhanced chemical vapor deposition Bae SH, Kalkan AK, Cheng SC, Fonash SJ |
1917 - 1920 |
Plasma conditions for as-grown low temperature poly-Si formation on SiO2 substrate by sputtering and plasma enhanced chemical vapor deposition processes Takeya M, Park WS, Jong GS, Ohmi T |
1921 - 1925 |
Real-time substrate misalignment monitor and automatic recalibration Hosokawa A, Demaray E, Mullapudi R, Inagawa M |
1926 - 1933 |
Postdeposition reduction of noble metal doped ZnO films Exarhos GJ, Rose A, Wang LQ, Windisch CF |
1934 - 1937 |
Twinned epitaxial layers formed on Si(111)root 3x root 3-B Hibino H, Sumitomo K, Ogino T |
1938 - 1943 |
In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001) Goldfarb I, Owen JHG, Bowler DR, Goringe CM, Hayden PT, Miki K, Pettifor DG, Briggs GAD |
1944 - 1948 |
Electron cyclotron resonance plasma etching of oxides and SrS and ZnS-based electroluminescent materials for flat panel displays Lee JW, Pathangey B, Davidson MR, Holloway PH, Lambers ES, Davydov A, Anderson TJ, Pearton SJ |
1949 - 1955 |
Monolithic and multilayer Cr/CrN, Cr/Cr2N, and Cr2N/CrN coatings on hard and soft substrates Kuruppu ML, Negrea G, Ivanov IP, Rohde SL |
1956 - 1962 |
Process controlled microstructural and binding properties of hard physical vapor deposition films Oechsner H |
1963 - 1968 |
Thickness-dependent crystallinity of sputter-deposited titania DeLoach JD, Aita CR |
1969 - 1975 |
Improved accuracy in monitoring Si monolayer incorporation in GaAs during molecular beam epitaxy Daweritz L, Schutzendube P, Reiche M, Ploog KH |
1976 - 1979 |
Excimer laser cleaning of silicon wafer backside metallic particles Beaudoin F, Meunier M, Simard-Normandin M, Landheer D |
1980 - 1990 |
Silicon field emitter cathodes : Fabrication, performance, and applications Temple D, Palmer WD, Yadon LN, Mancusi JE, Vellenga D, McGuire GE |
1991 - 1997 |
Getters and gettering in plasma display panels Caloi RM, Carretti C |
1998 - 2002 |
Ciliary microactuator array for scanning electron microscope positioning stage Darling RB, Suh JW, Kovacs GTA |