Applied Surface Science

Applied Surface Science, Vol.159 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (101 articles)

1 - 7	Self-organized growth of semiconductor nanostructures for novel light emitters Bimberg D, Heinrichsdorff F, Ledentsov NN, Shchukin VA
8 - 13	Silicon microphotonics Kimerling LC
14 - 18	Selectivity for O-adsorption position on dihydride Si(100) surfaces Kageshima H, Shiraishi K, Ikeda H, Zaima S, Yasuda Y
19 - 24	First-principles structural determination of Si(001)-C2H2 chemisorbed surface Tanida Y, Tsukada M
25 - 29	Effects of surface disorder on the surface stress of Si(100) during oxidation Narushima T, Itakura AN, Kurashina T, Kawabe T, Kitajima M
30 - 34	Hydrogen-mediated low-temperature epitaxy of Si in plasma-enhanced chemical vapor deposition Kitagawa T, Kondo M, Matsuda A
35 - 40	A study on initial oxidation of Si(100)-2 X 1 surfaces by coaxial impact collision ion scattering spectroscopy Wasekura M, Higashi M, Ikeda H, Sakai A, Zaima S, Yasuda Y
41 - 44	Initial stage of adsorption for organic carbons and native oxide growth on Si wafer Matsuo N, Kawamoto N, Aihara D, Miyoshi T
45 - 49	Electronic structures and the charge transfer of Au overlayer on Si(111) surfaces Murayama M, Nakayama T, Natori A
50 - 61	Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces Lucovsky G, Niimi H, Wu Y, Yang H
62 - 66	Surface stress in thin oxide layer made by plasma oxidation with applying positive bias Itakura AN, Narushima T, Kitajima M, Teraishi K, Yamada A, Miyamoto A
67 - 71	Periodic changes in interface state distribution in accordance with layer-by-layer oxidation on Si(100) Teramoto Y, Watanabe N, Fujimura M, Nohira H, Hattori T
72 - 74	Electrically detected magnetic resonance of near-interface defects in Si pn-junction structures with LOCOS isolation Wimbauer T, Mochizuki Y, Ito K, Horikawa M, Kitano T
75 - 82	Influence of nitrogen incorporation in ultrathin SiO2 on the structure and electronic states of the SiO2/Si(100) interface Miyazaki S, Tamura T, Ogasawara M, Itokawa H, Murakami H, Hirose M
83 - 88	Analysis on interface states of ultrathin-SiO2/Si(111) Hasunuma R, Ando A, Miki A, Nishioka Y
89 - 97	Structural evolution and valence electron-state change during ultra thin silicon-oxide growth Shimizu A, Abe S, Nakayama H, Nishino T, Iida S
98 - 103	Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces Shiozawa T, Yoshida T, Hashizume T, Hasegawa H
104 - 110	Evaluation of buried oxide formation in low-dose SIMOX process Ogura A, Ono H
111 - 115	Ellipsometric analysis of ultrathin oxide layers on SIMOX wafers Motooka T, Kusano Y, Nisihira K, Kato N
116 - 120	Low-temperature solid-phase-crystallization in Si1-xGex/SiO2 Park SK, Yamaguchi S, Sugii N, Nakagawa K, Miyao M
121 - 126	Formation and ordering of self-assembled Si islands by ultrahigh vacuum annealing of ultrathin bonded silicon-on-insulator structure Nuryadi R, Ishikawa Y, Tabe M
127 - 133	Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy Ramdani J, Droopad R, Yu Z, Curless JA, Overgaard CD, Finder J, Eisenbeiser K, Hallmark JA, Ooms WJ, Kaushik V, Alluri P, Pietambaram S
134 - 137	Orientation dependence of ferroelectric properties of Pb(ZrxTi1-x)O-3 thin films on Pt/SiO2/Si substrates Fujita H, Imade M, Sakashita M, Sakai A, Zaima S, Yasuda Y
138 - 142	Improvement of Y2O3/Si interface for FeRAM application Ito D, Yoshimura T, Fujimura N, Ito T
143 - 148	In-situ monitoring of PE-CVD growth of TiO2 films with laser Raman spectroscopy Nishida K, Morisawa K, Hiraki A, Muraishi S, Katoda T
149 - 153	Dependence of contact resistivity on impurity concentration in Co/Si systems Nakatsuka O, Ashizawa T, Nakai K, Tobioka A, Sakai A, Zaima S, Yasuda Y
154 - 160	Defect causing nonideality in nearly ideal Au/Si Schottky barrier Maeda K
161 - 166	Epitaxial growth of Bi2Sr2CuOx films onto Si(001) by molecular beam epitaxy Tambo T, Arakawa T, Shimizu A, Hori S, Tatsuyama C
167 - 173	Static electronic properties on various surface orientations of Al crystal undergoing electromigration Iguchi K, Tachibana A
174 - 178	The effect of a thin antimony layer addition on PdZn ohmic contacts for p-type InP Asamizu H, Yamaguchi A, Iguchi Y, Saitoh T, Koide Y, Murakami M
179 - 185	Fabrication and transport properties of 50-nm-wide Au/Cr/GaInAs electrode for electron wave interference device Miyamoto Y, Kokubo A, Oguchi H, Kurahashi M, Furuya K
186 - 190	Influence of reactive ion etching damage on the Schottky barrier height of Ti/p-Si interface Fujimura N, Yamaguchi T, Kato H, Ito T
191 - 196	Hydrogenation of GaAs-on-Si Schottky diodes by PH3-added H-2 plasma Wang G, Ogawa T, Soga T, Egawa T, Jimbo T, Umeno M
197 - 200	Characterization of the buried interface in a Ni (film) /3C-SiC (substrate) system using SXES Mihara I, An ZL, Kinoshita A, Hirai M, Kusaka M, Iwami M
201 - 209	Two-dimensional hydrogen distribution on solid surfaces studied by electron-stimulated desorption microscopy and Ni-silicides on H-terminated Si(100) surfaces Ueda K, Ishikawa K, Yoshimura M
210 - 219	Nanometer-scale characterization of lateral p-n(+) junction by scanning capacitance microscope Tomiye H, Yao T
220 - 224	Fluorescence EXAFS study on local structures around Mn atoms in MnF2-CaF2 superlattices and double hetero-structures on Si(111) Ofuchi H, Tabuchi M, Banshchikov AG, Sokolov NS, Yakovlev NL, Takeda Y
225 - 230	In situ UHV-TEM observation of the direct formation of Pd2Si islands on Si(111) surfaces at high temperature Takeguchi M, Wu Y, Tanaka M, Furuya K
231 - 236	ESR characterization of the top Si layer of ion implanted SIMOX Chowdhury EA, Seki T, Izumi T, Tanaka H, Hara T
237 - 242	Quantitative STM investigation of the phase formation in submonolayer In/Si(111) system Zotov AV, Saranin AA, Kubo O, Harada T, Katayama M, Oura K
243 - 249	Relation between interface morphology and recombination-enhanced defect reaction phenomena in II-VI light emitting devices Tomiya S, Okuyama H, Ishibashi A
250 - 255	X-ray CTR scattering measurement of InP/InGaAs/InP interface structures fabricated by different growth processes Tabuchi M, Takahashi R, Araki M, Hirayama K, Futakuchi N, Shimogaki Y, Nakano Y, Takeda Y
256 - 259	Study of sublattice inversion in GaAs/Ge/GaAs(001) crystal by X-ray diffraction Nakatani S, Kusano S, Takahashi T, Hirano K, Koh S, Kondo T, Ito R
260 - 264	Chemical trend of reflectance difference spectra of anion-rich compound semiconductor surfaces Nakayama T, Murayama M
265 - 269	Molecular beam epitaxy of GaSb with high concentration of Mn Matsukura F, Abe E, Ohno Y, Ohno H
270 - 276	Lateral growth in molecular beam epitaxy by low angle incidence microchannel epitaxy Bacchin G, Umeno A, Nishinaga T
277 - 281	Carrier profiles and electron traps at a growth-interrupted layer in GaAs fabricated by a focused ion beam and molecular beam epitaxy combined system Goto T, Hada T, Yanagisawa J, Wakaya F, Yuba Y, Gamo K
282 - 287	SeS2 assisted bonding of GaAs to Si - A new method for wafer bonding Arokiaraj J, Soga T, Jimbo T, Umeno M
288 - 291	Low temperature growth interface for growing Boron Monophosphide on Si substrates Nishimura S, Terashima K
292 - 300	Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation Negoro N, Fujikura H, Hasegawa H
301 - 307	Possibility of a quasi-liquid layer of As on GaAs substrate grown by MBE as observed by enhancement of Ga desorption at high As pressure Asai K, Feng JM, Vaccaro PO, Fujita K, Ohachi T
308 - 312	MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor pn junctions based on (Ga,Mn) As Ohno Y, Arata I, Matsukura F, Ohtani K, Wang S, Ohno H
313 - 317	Influence of interface bonds and buffer materials on optical properties of InAs/AlSb quantum wells grown on GaAs substrates Ohtani K, Sato A, Ohno Y, Matsukura F, Ohno H
318 - 327	MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor Feron O, Sugiyama M, Asawamethapant W, Futakuchi N, Feurprier Y, Nakano Y, Shimogaki Y
328 - 334	Effect of current flow direction on the heteroepitaxial growth of InSb films on Ge/Si(001) substrate heated by direct current Mori M, Nizawa Y, Nishi Y, Mae K, Tambo T, Tatsuyama C
335 - 340	Growth temperature effect on the heteroepitaxy of InSb on Si(111) Rao BV, Okamoto T, Shinmura A, Gruznev D, Mori M, Tambo T, Tatsuyama C
341 - 344	Characterization of low dielectric constant amorphous carbon nitride films Aono M, Nitta S, Katsuno T, Itoh T, Nonomura S
345 - 349	Influence of incorporation of Na on p-type CuInS2 thin films Yamamoto T, Fukuzaki K, Kohiki S
350 - 354	Materials design of n-type CuInS2 thin films using Zn or Cd species Yamamoto T, Luck IV, Scheer R
355 - 359	Theory of surfaces and interfaces of group III-nitrides Neugebauer J, Zywietz T, Scheffler M, Northrup J
360 - 367	Ab initio calculations on the dissociative reaction of As-4 molecules Toyoda K, Hiraoka YS, Naritsuka S, Nishinaga T
368 - 373	Numerical calculation with empirical interatomic potential for formation mechanism of CuAu-I type ordered structure in InGaAs/(110)InP Kangawa Y, Kuwano N, Oki K, Ito T
374 - 379	Quantum chemical mechanism in parasitic reaction of AlGaN alloys formation Makino O, Nakamura K, Tachibana A, Tokunaga H, Akutsu N, Matsumoto K
380 - 386	Monte-Carlo master equation method for a simulation of epitaxial growth dynamics Nakayama H, Morishita T, Ekaitsu T, Nishino T
387 - 391	Molecular dynamics analysis of point defects in silicon near solid-liquid interface Kakimoto K, Umehara T, Ozoe H
392 - 397	Quantum chemical mechanism of oxidation of the hydrogen-terminated Si surface by oxygen anion Sakata K, Sato T, Nakamura K, Osamura A, Tachibana A
398 - 404	In-situ optical monitoring of surface morphology and stoichiometry during GaN metal organic vapor phase epitaxy Kobayashi N, Kobayashi Y
405 - 413	Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer Iwaya M, Terao S, Hayashi N, Kashima T, Amano H, Akasaki I
414 - 420	Strain relief by In-doping and its effect on the surface and on the interface structures in (Al) GaN on sapphire grown by metalorganic vapor-phase epitaxy Yamaguchi S, Kariya M, Nitta S, Amano H, Akasaki I
421 - 426	Mass transport and the reduction of threading dislocation in GaN Nitta S, Kariya M, Kashima T, Yamaguchi S, Amano H, Akasaki I
427 - 431	In situ gravimetric monitoring of halogen transport atomic layer epitaxy of cubic-GaN Kumagai Y, Mayumi M, Koukitu A, Seki H
432 - 440	Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method Tabuchi M, Hirayama K, Takeda Y, Takeuchi T, Amano H, Akasaki I
441 - 448	Control and characterization of ZnO/GaN heterointerfaces in plasma-assisted MBE-grown ZnO films on GaN/Al2O3 Hong SK, Ko HJ, Chen YF, Hanada T, Yao T
449 - 455	Electrical properties of metal/GaN and SiO2/GaN interfaces and effects of thermal annealing Sawada T, Ito Y, Imai K, Suzuki K, Tomozawa H, Sakai S
456 - 461	Surface passivation of GaAs by ultra-thin cubic GaN layer Anantathanasarn S, Ootomo S, Hashizume T, Hasegawa H
462 - 467	Epitaxial growth of AlN films on Si substrates by ECR plasma assisted MOCVD under controlled plasma conditions in afterglow region Yasui K, Hoshino S, Akahane T
468 - 471	Lattice constant of GaN grown on 6H-SiC by MOMBE Honda T, Fujita N, Maki K, Yamamoto Y, Kawanashi H
472 - 480	Si(Ge)/oxide-based heterostructures and their applications to optoelectronics Fukatsu S, Kishimoto Y, Ishikawa Y, Shibata N
481 - 485	Simple fabrication of high density concave nanopyramid array (NPA) on Si surface Sawara S, Koh M, Goto T, Ando Y, Shinada T, Ohdomari I
486 - 491	Defects and their movement in Pb and Ge nanocrystals characterized by ultra-high vacuum high resolution transmission electron microscope Wu Y, Takeguchi M, Chen Q, Furuya K
492 - 497	Nano-interface engineering of Co/Ge/Si systems: metal incorporation into Ge quantum dots and SiO2/Si structures Prabhakaran K, Sumitomo K, Ogino T
498 - 502	Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures Mori J, Asahi H, Fudeta M, Noh JH, Watanabe D, Matsuda S, Asami K, Narukawa Y, Kawakami Y, Fujita S, Kaneko T, Gonda S
503 - 507	Self-assembled growth of InAs-quantum dots and postgrowth behavior studied by reflectance-difference spectroscopy Kita T, Tachikawa K, Tango H, Yamashita K, Nishino T
508 - 513	Direct evaluation of atomic layer intermixing via disordering in ALE grown (GaAs)(m)(GaP)(1) system Isshiki H, Takahashi M, Yamane N, Iizuka H, Aoyagi Y, Sugano T, Kimura T
514 - 519	Investigation of ZnO/sapphire interface and formation of ZnO nanocrystalline by laser MBE Ohkubo I, Matsumoto Y, Ohtomo A, Ohnishi T, Tsukazaki A, Lippmaa M, Koinuma H, Kawasaki M
520 - 527	Raman scattering analysis of InGaAs/AlAsSb short-period superlattices Georgiev N, Mozume T
528 - 531	Photoluminescence properties of In0.53Ga0.47As/GaAs0.5Sb0.5 type II quantum well structures lattice-matched to InP Takasaki H, Kawamura Y, Katayama T, Yamamoto A, Naito H, Inoue N
532 - 539	Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n <= 4) substrates Feng JM, Asai K, Narukawa Y, Kawakami Y, Fujita S, Ohachi T
540 - 543	Self-formed In0.2Ga0.8As quantum dot-like laser grown by metal organic chemical vapor deposition on Si substrate Kazi ZI, Egawa T, Jimbo T, Umeno M
544 - 549	The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature Senzaki J, Fukuda K, Imai S, Tanaka Y, Kobayashi N, Tanoue H, Okushi H, Arai K
550 - 555	Effects of ozone treatment of 4H-SiC(0001) surface Kosugi R, Ichimura S, Kurokawa A, Koike K, Fukuda K, Suzuki S, Okushi H, Yoshida S, Arai K
556 - 560	Epitaxial growth of 3C-SiC films on Si substrates by triode plasma CVD using dimethylsilane Yasui K, Asada K, Akahane T
561 - 566	Electron emission from amorphous and nanocluster carbon films grown by the cathodic arc process Milne WI, Satynarayana BS, Hart A, Robertson J
567 - 571	Electrical conduction of high-conductivity layers near the surfaces in hydrogenated homoepitaxial diamond films Yamanaka S, Takeuchi D, Watanabe H, Okushi H, Kajimura K
572 - 577	Spatial uniformity of Schottky contacts between aluminum and hydrogenated homoepitaxial diamond films Takeuchi D, Yamanaka S, Watanabe H, Okushi H, Kajimura K
578 - 582	Control of adsorbates and conduction on CVD-grown diamond surface, using scanning probe microscope Tachiki M, Fukuda T, Sugata K, Seo H, Umezawa H, Kawarada H
583 - 587	Electronic properties of diamond thin film for planar diamond electron emitter applications Maki T, Kawamura H, Kato S, Liu JP, Kobayashi T
588 - 593	Characterization of GaS-deposited CVD diamond films by AES and XPS Islam ABMO, Nishiyama Y, Tambo T, Tatsuyama C, Ito T
594 - 598	Thermal characterization of CVD diamond film by photoacoustic method Takabatake N, Kobayashi T, Sekine D, Izumi T
599 - 602	Theory of hydrogen extraction from hydrogenated diamond surfaces Kanai C, Watanabe K, Takakuwa Y
XIII - XIII	ISCSI-3 - Proceedings of the Third International Symposium on the Control of Semiconductor Interfaces - Karuizawa, Japan, October 25-29, 1999 - Preface Nishinaga T, Nishioka Y, Ito H, Hiraki A