Applied Surface Science

Applied Surface Science, Vol.184, No.1-4 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (83 articles)

3 - 7	Amorphous silicon-carbon alloys: a promising but complex and very diversified series of materials Solomon I
8 - 19	Silicon carbide alloys produced by hot wire, hot wire plasma-assisted and plasma-enhanced CVD techniques Ferreira I, Costa MEV, Pereira L, Fortunato E, Martins R, Ramos AR, Silva MF
20 - 26	Silicon carbide: from amorphous to crystalline material Foti G
27 - 36	Growth of silicon carbide: process-related defects Yakimova R, Syvajarvi M, Iakimov T, Jacobsson H, Kakanakova-Georgieva A, Raback P, Janzen E
37 - 42	MBE growth and properties of SiC multi-quantum well structures Fissel A, Kaiser U, Schroter B, Richter W, Bechstedt F
43 - 49	Heteroepitaxy of 3C-SiC by electron cyclotron resonance-CVD technique Mandracci P, Chiodoni A, Cicero G, Ferrero S, Giorgis F, Pirri CF, Barucca G, Musumeci P, Reitano R
50 - 54	SiC(100) ordered film growth by C-60 decomposition on Si(100) surfaces Moras P, Mahne N, Ferrari L, Pesci A, Capozi M, Aversa L, Jha SN, Verucchi R, Iannotta S, Pedio M
55 - 59	Surface preparation of 4H-SiC substrates for hot-wall CVD of SiC layers Wagner G, Doerschel J, Gerlitzke A
60 - 65	Mass spectroscopy analysis during the deposition of a-SiC : H and a-C : H films produced by hot wire and hot wire plasma-assisted techniques Ferreira I, Silva V, Aguas H, Fortunato E, Martins R
66 - 71	Growth chemistry of SiC alloys from SiF4-CH4 plasmas Cicala G, Capezzuto P, Bruno G, Rossi MC
72 - 78	Growth of SiC epitaxial layers on porous surfaces of varying porosity Saddow SE, Mynbaeva M, Smith MCD, Smirnov AN, Dimitriev V
79 - 83	Electrical characterization of SiC/Si heterostructures with Ge-modified interfaces Pezoldt J, Forster C, Weih P, Masri P
84 - 89	On the preparation of semi-insulating SiC bulk crystals by the PVT technique Bickermann M, Hofmann D, Straubinger TL, Weingartner R, Wellmann PJ, Winnacker A
90 - 95	Temperature dependence of acetylene adsorption and reaction on Si(111)-(7 x 7) De Renzi V, Biagi R, del Pennino U
96 - 100	Formation of intermediate SiCN interlayer during deposition of CNx on a-Si : H or a-SiC : H thin films Mitu B, Dinescu G, Budianu E, Ferrari A, Balucani M, Lamedica G, Dauscher A, Dinescu M
101 - 106	Correlation between the carbon and hydrogen contents with the gas species and the plasma impedance of silicon carbide films produced by PECVD technique Martins R, Silva V, Aguas H, Cabrita A, Ferreira I, Fortunato E
107 - 112	Correlations between properties and applications of the CVD amorphous silicon carbide films Kleps I, Angelescu A
113 - 117	C adsorption and diffusion at the Si(001) surface: implications for SiC growth Cicero G, Catellani A
118 - 122	Laser CVD of cubic SiC nanocrystals Kamlag Y, Goossens A, Colbeck I, Schoonman J
123 - 127	Crystallisation mechanism of amorphous silicon carbide Calcagno L, Musumeci P, Roccaforte F, Bongiorno C, Foti G
128 - 134	Peculiarities of preparing a-SiC : H films from methyltrichlorosilane Rusakov GV, Ivashchenko LA, Ivashchenko VI, Porada OK
137 - 143	Effects of short-range disorder upon electronic properties of a-SiC alloys Ivashchenko VI, Shevchenko VI
144 - 149	Transport mechanism in high resistive silicon carbide heterostructures Louro P, Vieira M, Vygranenko Y, Fernandes M, Schwarz R, Schubert M
150 - 155	Spectroscopic ellipsometry analysis of nanocrystalline silicon carbide obtained at low temperature Kerdiles S, Madelon R, Rizk R
156 - 160	Ion beam processing for Si/C-rich thermally grown SiO2 layers: photoluminescence and microstructure Rebohle L, Gebel T, Frob H, Reuther H, Skorupa W
161 - 166	Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films Hijikata Y, Yaguchi H, Yoshikawa M, Yoshida S
167 - 172	Characterization of single-crystal SiC polytypes using X-ray and Auger photoelectron spectroscopy Wolan JT, Grayson BA, Akshoy G, Saddow SE
173 - 177	A Monte Carlo study of low field transport in Al-doped 4H-SiC Martinez A, Lindefelt U, Hjelm M, Nilsson HE
178 - 182	Non-Rutherford backscattering studies of SiC/SIMOX structures Chen KW, Yu YH, Lei YM, Cheng LL, Sundaraval B, Luo EZ, Wong SP, Wilson IH, Chen LZ, Ren CX, Zou SC
183 - 189	Dopant profile measurements in ion implanted 6H-SiC by scanning capacitance microscopy Giannazzo F, Calcagno L, Roccaforte F, Musumeci P, La Via F, Raineri V
190 - 193	Particle and light-induced luminescence degradation in a-SiC : H Reitano R, Baeri A, Musumeci P
194 - 198	Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H-SiC Hjelm M, Bertilsson K, Nilsson HE
199 - 203	Numerical study of Bloch electron dynamics in wide band-gap semiconductors Nilsson HE, Martinez A, Sannemo U
204 - 208	Structural and optical properties of a-Si1-xCx : H grown by plasma enhanced CVD Giorgis F, Ambrosone G, Coscia U, Ferrero S, Mandracci P, Pirri CF
209 - 213	Spreading resistance measurements on nanocrystalline SiC produced by ion beam induced crystallisation Madhusoodanan KN, Heera V, Panknin D, Skorupa W
214 - 220	Plausible interpretation of optical absorption spectra of a-SiC : H thin films Ivashchenko VI, Rusakov GV, Shevchenko VI, Klymenko AS, Ivashchenko LA, Popov VM
221 - 225	Characterization of crystalline-amorphous transition by heavy C doping of poly-Si (poly-Si : C) Yamamoto Y, Fursenko O, Kopke K, Bauer J, Bugiel E, Kruger D, Zaumseil P, Tillack B
229 - 236	Vacancy-related defects in ion-beam and electron irradiated 6H-SiC Bratus VY, Petrenko TT, von Bardeleben HJ, Kalinina EV, Hallen A
237 - 241	Electron irradiation induced defects in monocrystalline 4H-SiC and 6H-SiC: the influence of the electron energy and doping von Bardeleben HJ, Canon JL
242 - 246	Behavior of background impurities in thick 4H-SiC epitaxial layers Kakanakova-Georgieva A, Yakimova R, Syvajarvi M, Janzen E
247 - 251	Evolution of ion implantation-caused vacancy-type defects in 6H-SiC probed by slow positron implantation spectroscopy Anwand W, Brauer G, Skorupa W
252 - 256	Role of the defects under porous silicon carbide formation Savkina NS, Sorokin LM, Hutchison JL, Sloan J, Tregubova AS, Mosina GN, Shuman VB, Ratnikov VV
257 - 262	Hydrogen-boron complex formation and dissociation in 4H-silicon carbide Janson MS, Hallen A, Linnarsson MK, Svensson BG
263 - 267	Nitrogen passivation by implantation-induced point defects in 4H-SiC epitaxial layers Aberg D, Hallen A, Pellegrino P, Svensson BG
268 - 272	Comparative EPR study of hydrogenated and unhydrogenated amorphous silicon carbide thin films Christidis T, Tabbal M, Isber S, El Khakani MA, Chaker M
273 - 277	Symmetry, spin state and hyperfine parameters of vacancies in cubic SiC Petrenko TT, Petrenko TL, Bratus VY, Monge JL
278 - 283	PES and LEER study of hydrogen- and oxygen-terminated 6H-SiC(0001) and (0 0 0(1)over-bar) surfaces Sieber N, Seyller T, Graupner R, Ley L, Mikalo R, Hoffmann P, Batchelor DR, Schmeisser D
287 - 294	Contact formation in SiC devices Pecz B
295 - 298	Improvement of high temperature stability of nickel contacts on n-type 6H-SiC Roccaforte F, La Via F, Raineri V, Calcagno L, Musumeci P
299 - 306	Formation of metal disilicide layers contacting ion beam-synthesized, buried 3C-SiC layers in silicon Lindner JKN, Wenzel S, Stritzker B
307 - 316	p-type doping of SiC by high dose Al implantation - Problems and progress Heera V, Panknin D, Skorupa W
317 - 322	A modified oxidation procedure for ion-implanted silicon carbide devices annealed at low temperatures Capano MA
323 - 329	Influence of ion implantation on the quality of 4H-SiC CVD epitaxial layers Kalinina E, Kholujanov G, Solov'ev V, Strel'chuk A, Kossov V, Yafaev R, Kovarskii, Shchukarev A, Obyden S, Saparin G, Ivannikov P, Hallen A, Konstantinov A
330 - 335	Investigation of Al-implanted 6H-and 4H-SiC layers after fast heating rate annealings Ottaviani L, Lazar M, Locatelli ML, Monteil Y, Heera V, Voelskow M, Skorupa W
336 - 339	Writing cobalt FIB implantation into 6H : SiC Bischoff L, Teichert J
340 - 345	Oxide growth on SiC(0001) surfaces Schmeisser D, Batchelor DR, Mikalo RP, Hoffmann P, Lloyd-Spetz A
346 - 349	Preparation and characterization of SiO2/6H-SiC metal-insulator-semiconductor structure using TEOS as source material Kamimura K, Kobayashi D, Okada S, Mizuguchi T, Ryu E, Hayashibe R, Nagaune F, Onuma Y
350 - 355	Synthesis of SiC on Si(111) at moderate temperatures by supersonic C-60 beams Aversa L, Verucchi R, Ciullo G, Ferrari L, Moras P, Pedio M, Pesci A, Iannotta S
356 - 361	Laser crystallization of amorphous SiC thin films on glass Urban S, Falk F
362 - 366	Numerical and experimental analysis of pulsed excimer laser processing of silicon carbide Dutto C, Fogarassy E, Mathiot D
367 - 371	Ion beam synthesis of n-type doped SiC layers Serre C, Panknin D, Perez-Rodriguez A, Romano-Rodriguez A, Morante JR, Kogler R, Skorupa W, Esteve J, Acero MC
372 - 376	Focused ion beam sputtering investigations on SiC Bischoff L, Teichert J, Heera V
377 - 382	The beneficial role of flash lamp annealing on the epitaxial growth of the 3C-SiC on Si Panknin D, Stoemenos J, Eickhoff M, Heera V, Voelskow M, Skorupa W
383 - 386	(AlN)(x)(SiC)(1-x) buried layers implanted in 6H-SiC: a theoretical study of their optimized composition Masri P, Laridjani MR, Pezoldt J, Yankov RA, Skorupa W, Averous M
387 - 390	Chemical sputtering of amorphous silicon carbide under hydrogen bombardment Salonen E, Nordlund K, Keinonen J, Wu CH
393 - 398	Progress towards SiC products Harris CI, Savage S, Konstantinov A, Bakowski M, Ericsson P
399 - 403	Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation Chung GY, Williams JR, Tin CC, McDonald K, Farmer D, Chanana RK, Pantelides ST, Holland OW, Feldman LC
404 - 407	Experimental characterization of a 4H-SiC high voltage current limiting device Nallet F, Planson D, Godignon P, Locatelli ML, Lazar M, Chante JP
408 - 412	Readout improvement in large area a-SiC : H-based image sensors Fernandes M, Vygranenko Y, Vieira M
413 - 418	Tungsten, nickel, and molybdenum Schottky diodes with different edge termination Weiss R, Frey L, Ryssel H
419 - 424	Electrical characteristics of p-3C-SiC/n-6H-SiC heterojunctions grown by sublimation epitaxy on 6H-SiC substrates Lebedev AA, Strel'chuk AM, Davydov DV, Savkina NS, Tregubova AS, Kuznetsov AN, Solov'ev VA, Poletaev NK
425 - 430	High quality SiC applications in radiation dosimetry Bruzzi M, Nava F, Pini S, Russo S
431 - 436	Radiation hardness of SiC based ions detectors for influence of the relative protons Ivanov AM, Strokan NB, Davydov DV, Savkina NS, Lebedev AA, Mironov YT, Riabov GA, Ivanov EM
437 - 442	Silicon carbide photodiodes: Schottky and PINIP structures Cabrita A, Pereira L, Brida D, Lopes A, Marques A, Ferreira I, Fortunato E, Martins R
443 - 447	Thin film position sensitive detectors based on pin amorphous silicon carbide structures Cabrita A, Figueiredo J, Pereira L, Aguas H, Silva V, Brida D, Ferreira I, Fortunato E, Martins R
448 - 454	Investigation of 4H-SiC Schottky diodes by ion beam induced charge (IBIC) technique Manfredotti C, Fizzotti F, Lo Giudice A, Paolini C, Vittone E, Nava F
455 - 459	Triode structure of ion detector based on 6H-SiC epitaxial films Strokan NB, Ivanov AM, Davydov DV, Savkina NS, Bogdanova EV, Kuznetsov AN, Lebedev AA
460 - 465	Electrophysical and photoelectrical properties of UV-range injection structures made of silicon carbide Asriyan HV, Gasparyan FV, Aroutiounian VM, Soukiassian P
466 - 470	Sensitivity of p-n junction based on SiC doped with deep impurity acceptor levels Buniatyan VV, Gasparyan FV, Aroutiounian VV, Soukiassian P
471 - 476	LSP image sensors based on SiC heterostructures Vieira M, Fernandes M, Fantoni A, Louro P, Vygranenko Y, Schwarz R, Schubert M
477 - 482	Study of 6H-SiC high voltage bipolar diodes under reverse biases Isoird K, Lazar M, Ottaviani L, Locatelli ML, Raynaud C, Planson D, Chante JP
483 - 486	Electrical characterization of Schottky diodes fabricated on SiC epitaxial layers grown on porous SiC substrates Kuznetsov NI, Mynbaeva MG, Melnychuk G, Dmitriev VA, Saddow SE
XII - XIII	Proceedings of the European Materials Research Society 2001-Symposium F - "Amorphous and crystalline silicon carbide: Material and applications" - Preface Calcagno L, Hallen A, Martins R, Skorupa W