Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.14, No.3 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (169 articles)

1577 - 1581	Noncontact Scanning Force Microscopy Using a Direct-Oscillating Piezoelectric Microcantilever Itoh T, Ohashi T, Suga T
1582 - 1586	Combined Surface-Plasmon Resonance and Scanning Force Microscope Instrument Chen X, Davies MC, Roberts CJ, Shakesheff KM, Tendler SJ, Williams PM, Davies J
1587 - 1590	Atomic Species Identification in Scanning-Tunneling-Microscopy by Time-of-Flight Spectroscopy Spence JC, Weierstall U, Lo W
1591 - 1595	Shallow Ripples with Giant Wavelengths Observed by Atomic-Force Microscopy - Real Effects and the Report of a New Artifact Dai ZX, Yoo M, Delozanne A
1596 - 1599	C-60 Manipulation and Cluster Formation Using a Scanning Tunneling Microscope Dunn AW, Beton PH, Moriarty P
1600 - 1606	Scanning Force Microscopy Study of the Surface-Topography of Thin BaTiO3 Films Deposited by Pulsed-Laser Ablation Zhang J, Szabadi M, Hess P
1607 - 1610	Cross-Sectional Scanning Tunneling Spectroscopy of Cleaved, Silicon-Based Metal-Oxide-Semiconductor Junctions Thibado PM, Mercer TW, Fu S, Egami T, Dinardo NJ, Bonnell DA
1611 - 1620	Surface-Structures of Thermoplastic and Thermoset Films After Modification by Graft-Copolymerization - Comparative-Study by X-Ray Photoelectron-Spectroscopy and Atomic-Force Microscopy Loh FC, Tan KL, Kang ET, Li SF
1621 - 1629	In-Situ Observation of the Tip Shape of Co-Ge Liquid Alloy Ion Sources in a High-Voltage Transmission Electron-Microscope Driesel W, Dietzsch C, Hesse E, Bischoff L, Teichert J
1630 - 1634	Application of Time-Resolved Scanning Electron-Microscopy to the Analysis of the Motion of Micromechanical Structures Ogo I, Macdonald NC
1635 - 1641	Influence of Coulomb Interactions on Choice of Magnification, Aperture Size, and Source Brightness in a 2 Lens Focused Ion-Beam Column Kruit P, Jiang XR
1642 - 1649	Nanometer-Scale Lithography on Si(001) Using Adsorbed H as an Atomic Layer Resist Adams DP, Mayer TM, Swartzentruber BS
1650 - 1654	Examination of Ge/Si and Gesi/Si Surface Nanostructures Using Transmission Electron-Microscopy and Focused Ion-Beam-Assisted Processing Deng C, Sigmon TW, Mccarthy JM
1655 - 1659	Morphology of Thin Sb Layers Grown on Si(111)7X7 at Room-Temperature Cuberes MT, Ascolani H, Moreno M, Sacedon JL
1660 - 1669	Epitaxial-Growth of Si1-X-Ygexcy Alloy Layers on (100)Si by Rapid Thermal Chemical-Vapor-Deposition Using Methylsilane Mi J, Warren P, Gailhanou M, Ganiere JD, Dutoit M, Jouneau PH, Houriet R
1670 - 1674	Buried-Gate Oxide Thinning During Epitaxial Lateral Overgrowth for Dual-Gated Metal-Oxide-Semiconductor Field-Effect Transistors Watts JS, Neudeck GW
1675 - 1681	Characterization of Si1-xGex Epilayers Grown Using a Commercially Available Ultrahigh-Vacuum Chemical-Vapor-Deposition Reactor Lafontaine H, Houghton DC, Elliot D, Rowell NL, Baribeau JM, Laframboise S, Sproule GI, Rolfe SJ
1682 - 1686	Microwave Plasma Nitridation of Si(100), Ge(100), and Si1-xGex Surfaces - A Comparative-Study Mukhopadhyay M, Ray SK, Maiti CK
1687 - 1696	In-Situ Investigation of the Passivation of Si and Ge by Electron-Cyclotron-Resonance Plasma-Enhanced Chemical-Vapor-Deposition of SiO2 Wang Y, Hu YZ, Irene EA
1697 - 1701	Measurement of N in Nitrided Oxides Using Spectroscopic Immersion Ellipsometry Irene EA, Liu Q, Paulson WM, Tobin PJ, Hegde RI
1702 - 1705	Analysis of Fourier-Transform Infrared-Spectra and Peak Shifts in Plasma-Enhanced Chemical-Vapor-Deposited Fluorinated Silica Glasses Swope R, Yoo WS
1706 - 1711	Structural and Electrical Characterization of TiO2 Grown from Titanium Tetrakis-Isopropoxide (Ttip) and Ttip/H2O Ambients Yan J, Gilmer DC, Campbell SA, Gladfelter WL, Schmid PG
1712 - 1718	Silicon Dioxide Passivation of in P/InGaAs Metal-Semiconductor-Metal Photodetectors Kollakowski S, Schade U, Bottcher EH, Kuhl D, Bimberg D, Ambree P, Wandel K
1719 - 1724	Molecular-Beam Epitaxy of High-Quality Lattice-Matched In1-X-Ygaxalyas Epitaxial Layers on InP Substrates Chua SJ, Ramam A
1725 - 1728	Basic Analysis of Atomic-Scale Growth Mechanisms for Molecular-Beam Epitaxy of GaAs Using Atomic-Hydrogen as a Surfactant Okada Y, Harris JS
1729 - 1735	Antimony Doped GaAs - Role of the Isoelectronic Dopant in Defect Evolution Paskova T, Valcheva E, Yakimova R
1736 - 1738	All-Solid Source Molecular-Beam Epitaxy Growth and Characterization of Strain-Compensated 1.3-Mu-M InAsP/InGaP/InP Multiquantum-Well Lasers for High-Temperature Operation Toivonen M, Savolainen P, Asonen H, Murison R
1739 - 1744	Influence of a ZnTe Buffer Layer on the Structural Quality of CdTe Epilayers Grown on (100)GaAs by Metalorganic Vapor-Phase Epitaxy Leo G, Longo M, Lovergine N, Mancini AM, Vasanelli L, Drigo AV, Romanato F, Peluso T, Tapfer L
1745 - 1751	Effects of Low-Temperature-Grown GaAs and AlGaAs on the Current of a Metal-Insulator-Semiconductor Structure Chen CL, Mahoney LJ, Nichols KB, Manfra MJ, Brown ER, Nitishin PM, Molvar KM, Gramstorff BF, Murphy RA
1752 - 1757	Comparison of Masking Materials for High Microwave-Power CH4/H-2/Ar Etching of III-V Semiconductors Lee JW, Crockett RV, Pearton SJ
1758 - 1763	BCl3/N-2 Dry-Etching of InP, Inalp, and InGaP Ren F, Lothian JR, Kuo JM, Hobson WS, Lopata J, Caballero JA, Pearton SJ, Cole MW
1764 - 1772	Smooth Etching of Various III/V and II/VI Semiconductors by Cl-2 Reactive Ion-Beam Etching Yoshikawa T, Sugimoto Y, Sakata Y, Takeuchi T, Yamamoto M, Hotta H, Kohmoto S, Asakawa K
1773 - 1779	Influence of CH4/H-2 Reactive Ion Etching on the Deep Levels of Si-Doped AlxGa1-xAs (X=0.25) Pereira RG, Vanhove M, Depotter M, Vanrossum M
1780 - 1783	Low-Temperature Chemically Assisted Ion-Beam Etching Processes Using Cl-2, CH3I, and Ibr3 to Etch InP Optoelectronic Devices Eisele KM, Daleiden J, Ralston J
1784 - 1790	Fringe Stabilization and Depth Monitoring During the Holographic Photoelectrochemical Etching of N-InP(100) Substrates Soltz D, Depaoli MA, Cescato L
1791 - 1795	High-Rate and Highly Selective Anisotropic Etching for WSix/Poly-Si Using Electron-Cyclotron-Resonance Plasma Nojiri K, Tsunokuni K, Yamazaki K
1796 - 1806	Polysilicon Gate Etching in High-Density Plasmas .2. X-Ray Photoelectron-Spectroscopy Investigation of Silicon Trenches Etched Using a Chlorine-Based Chemistry Bell FH, Joubert O, Vallier L
1807 - 1811	In-Situ Fiber Optic Thermometry of Wafer Surface Etched with an Electron-Cyclotron-Resonance Source Thomas S, Berg EW, Pang SW
1812 - 1818	Effects of Surface Cleaning on Electrical-Properties for Ni Contacts to P-Type ZnSe Ishikawa H, Tsukui K, Koide Y, Teraguchi N, Tomomura Y, Suzuki A, Murakami M
1819 - 1827	Thin, High Atomic-Weight Refractory Film Deposition for Diffusion Barrier, Adhesion Layer, and Seed Layer Applications Rossnagel SM, Nichols C, Hamaguchi S, Ruzic D, Turkot R
1828 - 1836	Chemical-Vapor-Deposition of Copper from Cu-I Hexafluoroacetylacetonate Trimethylvinylsilane for Ultralarge Scale Integration Applications Braeckelmann G, Manger D, Burke A, Peterson GG, Kaloyeros AE, Reidsema C, Omstead TR, Loan JF, Sullivan JJ
1837 - 1845	Film Property Comparison of Ti/Tin Deposited by Collimated and Uncollimated Physical Vapor-Deposition Techniques Wang SQ, Schlueter J
1846 - 1852	Step Coverage Comparison of Ti/Tin Deposited by Collimated and Uncollimated Physical Vapor-Deposition Techniques Wang SQ, Schlueter J, Gondran C, Boden T
1853 - 1859	Cu Metallization Using a Permanent-Magnet Electron-Cyclotron-Resonance Microwave Plasma/Sputtering Hybrid System Gorbatkin SM, Poker DB, Rhoades RL, Doughty C, Berry LA, Rossnagel SM
1860 - 1863	Optimization of Electrostatic Deflectors - Comment Lencova B
1864 - 1866	Calculation of Etching Profile in the Photolithographic Process on As2S3 Thin-Films Mamedov S, Kisliuk A
1867 - 1869	Imaging Fibers by Atomic-Force Microscopy Carter MM, Mcintyre NS, Davidson R, King HW
1870 - 1872	Versatile Sample Handling-System for Scanning-Tunneling-Microscopy Studies of Molecular-Beam Epitaxy Whitman LJ, Thibado PM, Linker F, Patrin J
1873 - 1874	Analytical Expressions for Emission Characteristics as a Function of Experimental Parameters in Sharp Field Emitter Devices (Vol 13, Pg 511, 1995) Jensen KL, Zaidman EG
1883 - 1883	Preface Mackie WA, Bell AE
1885 - 1888	Control of Emission Characteristics of Silicon Field Emitter Arrays by an Ion-Implantation Technique Kanemaru S, Hirano T, Tanoue H, Itoh J
1889 - 1894	Instability and Reliability of Silicon Field-Emission Array Li Q, Xu JF, Song HB, Liu XF, Kang WP
1895 - 1898	Characterization of Porous Silicon Field Emitter Properties Boswell EC, Huang M, Smith GD, Wilshaw PR
1899 - 1901	Porous Silicon Field-Emission Cathode Development Jessing JR, Parker DL, Weichold MH
1902 - 1905	Electron-Beam Characteristics of Double-Gated Si Field Emitter Arrays Toma Y, Kanemaru S, Itoh J
1906 - 1909	Fabrication of Silicon Field Emitters by Forming Porous Silicon Kim D, Kwon SJ, Lee JD
1910 - 1913	Polycrystalline Silicon Field Emitters Boswell EC, Huq SE, Huang M, Prewett PD, Wilshaw PR
1914 - 1917	Influence of Fill Gases on the Failure Rate of Gated Silicon Field Emitter Arrays Meassick S, Champaign H
1918 - 1923	Modeling of Thermal Effects in Silicon Field Emitters Ancona MG
1924 - 1929	Modeling and Comparisons of Field Emitter Devices with Various Geometries Kang JH, Cho JW, Kim JW, Kim JM
1930 - 1933	Spatial-Distribution of the Electric-Field for Field-Emission Microtriodes Nicolaescu D
1934 - 1937	Computer-Simulation of the Field-Emission from Multilayer Cathodes Kryuchenko YV, Litovchenko VG
1938 - 1941	Electrostatic Analysis of Field-Emission Triode with Volcano-Type Gate Wang BP, Tong LS, Sin JK, Poon VM
1942 - 1946	Analytical and Seminumerical Models for Gated Field Emitter Arrays .1. Theory Jensen KL, Zaidman EG, Kodis MA, Goplen B, Smithe DN
1947 - 1951	Analytical and Seminumerical Models for Gated Field Emitter Arrays .2. Comparison of Theory to Experiment Jensen KL, Zaidman EG, Kodis MA, Goplen B, Smithe DN
1952 - 1957	3-Dimensional Axisymmetrical Space-Charge Simulation via Boundary Elements and Emitted Particles Hartman RL, Mackie WA, Davis PR
1958 - 1962	Fabrication and Testing of Vertical Metal Edge Emitters with Well-Defined Gate to Emitter Separation Fleming JG, Ohlberg DA, Felter T, Malinowski M
1963 - 1965	Manufacturing a Patternable Metallized Substrate for Tungsten Ultralong Field Emitter Array by Use of the Double Ion-Beam Deposition Method Liu GY, Zhu MH, Tang SW, Zhu CC, Liu JS
1966 - 1969	New Approach to Manufacturing Field Emitter Arrays with Sub-Half-Micron Gate Apertures Lee CG, Ahn HY, Park BG, Lee JD
1970 - 1972	Cone-Shaped Metal-Insulator-Semiconductor Cathode for Vacuum Microelectronics Ishikawa J, Inoue K, Sadakane S, Gotoh Y, Tsuji H
1973 - 1976	Modification of Field Emitter Array Tip Shape by Focused Ion-Beam Irradiation Takai M, Kishimoto T, Yamashita M, Morimoto H, Yura S, Hosono A, Okuda S, Lipp S, Frey L, Ryssel H
1977 - 1981	A New Structure of Field Emitter Arrays Itoh S, Niiyama T, Taniguchi M, Watanabe T
1982 - 1985	2-Stage Distributed-Amplifier on Field Emitter Arrays Zakharchenko YF, Torgashov GV, Gulyaev YV, Sinitsyn NI, Nefedov IS
1986 - 1989	Field-Emitter-Array Development for Microwave Applications Spindt CA, Holland CE, Schwoebel PR, Brodie I
1990 - 1993	Optimization of Field-Emission Arrays for Inductive Output Amplifiers Kodis MA, Jensen KL, Zaidman EG, Goplen B, Smithe DN
1994 - 1999	A-Characterization, B-Characterization, and C-Characterization of Gated Field-Emission Arrays for Radio-Frequency Device Performance Zaidman EG, Jensen KL, Kodis MA
2000 - 2004	Novel High-Density Plasma Tool for Large-Area Flat-Panel Display Etching Heinrich F, Banziger U, Jentzsch A, Neumann G, Huth C
2005 - 2007	Fabrication of Sub-0.5 Mu-M Diameter Cobalt Dots on Silicon Substrates and Photoresist Pedestals on 50 cm X 50 cm Glass Substrates Using Laser Interference Lithography Spallas JP, Boyd RD, Britten JA, Fernandez A, Hawryluk AM, Perry MD, Kania DR
2008 - 2010	Benefits of the Lateral Resistor in a Field-Effect Display Levine JD
2011 - 2019	Electron Field-Emission from Chemical-Vapor-Deposited Diamond Zhu W, Kochanski GP, Jin S, Seibles L
2020 - 2023	Monte-Carlo Study of Hot-Electron and Ballistic Transport in Diamond - Low Electric-Field Region Cutler PH, Huang ZH, Miskovsky NM, Dambrosio P, Chung M
2024 - 2029	Characterization of Amorphous-Carbon Coated Silicon Field Emitters Myers AF, Camphausen SM, Cuomo JJ, Hren JJ, Liu J, Bruley J
2030 - 2033	Cold Emission from the Single-Crystalline Microparticle of Diamond on a Si Tip Givargizov EI, Zhirnov VV, Kuznetsov AV, Plekhanov PS
2034 - 2036	Emission Stability and High-Current Performance of Diamond-Coated Si Emitters Zhirnov VV, Voronin AB, Givargizov EI, Meshcheryakova AL
2037 - 2040	Calculation of Electronic-Properties of Defects in Diamond - Application to Electron-Emission Miskovsky NM, Cutler PH, Huang ZH
2041 - 2045	Work Function Measurements of Diamond Film Surfaces Mackie WA, Plumlee JE, Bell AE
2046 - 2049	Electron-Emission Observations from as-Grown and Vacuum-Coated Chemical-Vapor-Deposited Diamond Lamouri A, Wang YX, Mearini GT, Krainsky IL, Dayton JA, Mueller W
2050 - 2055	Field-Emission from Diamond-Coated Molybdenum Field Emitters Choi WB, Liu J, Mcclure MT, Myers AF, Zhirnov VV, Cuomo JJ, Hren JJ
2056 - 2059	Field-Emission Measurements with Mu-M Resolution on Chemical-Vapor-Deposited Polycrystalline Diamond Films Pupeter N, Gohl A, Habermann T, Mahner E, Muller G, Piel H, Niedermann P, Hanni W
2060 - 2067	Diamond Emitters Fabrication and Theory Geis MW, Twichell JC, Lyszczarz TM
2068 - 2071	Micropatterned Polycrystalline Diamond Field Emitter Vacuum Diode-Arrays Kang WP, Davidson JL, Howell M, Bhuva B, Kinser DL, Kerns DV, Li Q, Xu JF
2072 - 2079	Graded Electron-Affinity Electron Source Shaw L, Gray HF, Jensen KL, Jung TM
2080 - 2082	Influence of External Factors on Electron Field-Emission from Thin-Film Nanofilament Carbon Structures Chernozatonskii LA, Kosakovskaya ZY, Gulyaev YV, Sinitsyn NI, Torgashov GV, Zakharchenko YF
2083 - 2086	Field-Emission from Microstructured Cesiated Surfaces Mitterauer J
2087 - 2089	Vacuum Emission of Hot and Ballistic Electrons from GaAs Fitting HJ, Hingst T, Schreiber E, Geib E
2090 - 2092	Field-Emission from ZrC Films on Si and Mo Single Emitters and Emitter Arrays Xie TB, Mackie WA, Davis PR
2093 - 2095	Emission Characteristics of Metal-Insulator-Metal Tunnel Cathodes Adachi H
2096 - 2099	Experiments of Highly Emissive Metal-Oxide-Semiconductor Electron-Tunneling Cathode Yokoo K, Koshita G, Hanzawa S, Abe Y, Neo Y
2100 - 2104	Analysis of Vacuum Microelectronic Components by the Use of Special Finite-Elements Kopka P, Ermert H
2105 - 2109	Microscopic Characterization of Field Emitter Array Structure and Work Function by Scanning Maxwell-Stress Microscopy Itoh J, Nazuka Y, Kanemaru S, Inoue T, Yokoyama H, Shimizu K
2110 - 2113	Performance of the Trial Scanning Atom-Probe - New Approach to Evaluate the Microtip Apex Nishikawa O, Iwatsuki M, Aoki S, Ishikawa Y
2114 - 2118	Field-Emission Characteristics of Transition-Metal Nitrides Endo M, Nakane H, Adachi H
2119 - 2125	Bayard-Alpert Vacuum Gauge with Microtips Baptist R, Bieth C, Py C
2126 - 2129	An Evaluation of the Intrinsic Emittance of a Field Emitter Liu YF, Lau YY
2130 - 2134	Parameters of the Tip Arrays Covered by Low Work Function Layers Evtukh AA, Litovchenko VG, Marchenko RI, Klyui NI, Semenovich V, Nelep C
2135 - 2137	Autocorrelation Function of 1/F Current Fluctuations in Vacuum Microelectronics Devices Amirkhanov RN, Ghots SS, Bakhtizin RZ
2145 - 2145	Papers from the 15th North-American Conference on Molecular-Beam Epitaxy - 17-20 September 1995 - University-of-Maryland - College-Park, Maryland - Preface Beresford R
2147 - 2150	Real-Time Simultaneous Optical-Based Flux Monitoring of Al, Ga, and in Using Atomic-Absorption for Molecular-Beam Epitaxy Pinsukanjana P, Jackson A, Tofte J, Maranowski K, Campbell S, English J, Chalmers S, Coldren L, Gossard A
2151 - 2156	Methodologies for in-Situ Pyrometric Interferometry Monitoring and Control of Molecular-Beam Epitaxy Growth of AlAs/GaAs Distributed Bragg Reflectors Lee HP, Li Y, Sato DL, Zhou JJ
2157 - 2162	Investigation of the Accuracy of Pyrometric Interferometry in Determining AlxGa1-xAs Growth-Rates and Compositions Sacks RN, Sieg RM, Ringel SA
2163 - 2165	Photoemission Oscillations as an in-Situ Monitor of Layer Thickness with Monolayer Resolution Zinck JJ, Chow DH, Schulman J
2166 - 2169	Performance Evaluation of the Commercial Point of Inflection Thermometry Substrate-Temperature Monitor Svensson SP, Gill DM
2170 - 2174	Strain-Modulated Epitaxy - Modification of Growth-Kinetics via Patterned, Compliant Substrates Cartercoman C, Brown AS, Bicknelltassius R, Jokerst NM, Fournier F, Dawson DE
2175 - 2179	Properties and Applications of the Epitaxial Shadow Mask Molecular-Beam Epitaxy Technique Malzer S, Kneissl M, Kiesel P, Gulden KH, Wu XX, Smith JS, Dohler GH
2180 - 2183	Siamese Cell for Group-V Flux Measurements, Uniform Arsenide Phosphide Alloys, and Quaternary Lasers Wood CE, Johnson FG
2184 - 2186	Analysis of Cracking Efficiency of an Atomic-Hydrogen Source, and Its Effect on Desorption of AlxGa1-xAs Native Oxides Wicks GW, Rueckwald ER, Koch MW
2187 - 2191	Reduction of Visible Defect Densities in Molecular-Beam Epitaxy-Grown GaAs Using a High-Capacity, Low Flux Transient Ga Source with Novel Crucible Inserts Sacks RN, Patterson GA, Stair KA
2192 - 2194	Cell Configuration-Induced Strain in Quaternary Films Svensson SP, Uppal PN, Gill DM
2195 - 2198	Self-Assembled InSb and GaSb Quantum Dots on GaAs(001) Bennett BR, Thibado PM, Twigg ME, Glaser ER, Magno R, Shanabrook BV, Whitman LJ
2199 - 2202	New Insights into the Kinetics of the Stress-Driven 2-Dimensional to 3-Dimensional Transition Chen KM, Jesson DE, Pennycook SJ, Thundat T, Warmack RJ
2203 - 2207	Strained Coherent InAs Quantum Box Islands on GaAs(100) - Size Equalization, Vertical Self-Organization, and Optical-Properties Xie QH, Kobayashi NP, Ramachandran TR, Kalburge A, Chen P, Madhukar A
2208 - 2211	Structural and Photoluminescence Properties of Growth-Induced InAs Island Columns in GaAs Solomon GS, Trezza JA, Marshall AF, Harris JS
2212 - 2215	High-Index Orientation Effects of Strained Self-Assembled InGaAs Quantum Dots Lubyshev DI, Gonzalezborrero PP, Marega E, Petitprez E, Basmaji P
2216 - 2220	Commercial Heterojunction Bipolar-Transistor Production by Molecular-Beam Epitaxy Streit DC, Oki AK, Block TR, Lammert MD, Hoppe MM, Umemoto DK, Wojtowicz M
2221 - 2224	Molecular-Beam Epitaxy Growth and Characterization of InGaAlAs-Collector Heterojunction Bipolar-Transistors with 140 GHz - F-Max and 20 V Breakdown Block TR, Wojtowicz M, Cowles J, Tran L, Oki AK, Streit DC
2225 - 2228	InGaP/GaAs/InGaP Double-Heterojunction Bipolar-Transistors Grown by Solid-Source Molecular-Beam Epitaxy with a Valved Phosphorus Cracker Chin TP, Chang JC, Woodall JM, Chen WL, Haddad GI
2229 - 2232	Surface Segregation of Arsenic and Phosphorus from Buried Layers During Si Molecular-Beam Epitaxy Hobart KD, Kub FJ, Jemigan GG, Thompson PE
2233 - 2235	In1-Xalxp/InAlAs/InGaAs and InAlAs/Inas0.3P0.7 High-Electron-Mobility Transistor Structures Grown by Solid Source Molecular-Beam Epitaxy Hoke WE, Lemonias PJ, Weir DG, Hendriks HT, Chou LJ, Hsieh KC
2236 - 2239	Pseudomorphic High-Electron-Mobility Transistors with Low-Temperature-Grown GaAs Buffers Rogers TJ, Nichols KB, Kopp WF, Smith FW, Actis R
2240 - 2243	Nondestructive Test Methodology for Molecular-Beam Epitaxy-Grown Pseudomorphic High-Electron-Mobility Transistor Materials Pao YC
2244 - 2247	All-Solid Source Molecular-Beam Epitaxy Growth of GaxIn1-Xasyp1-Y/InP Lasers Using Phosphorus and Arsenic Valved Cracking Cells Baillargeon JN, Cheng KY, Cho AY, Chu SN
2248 - 2251	Molecular-Beam Epitaxy Growth of InGaP Multiple-Quantum-Well Structures on Gap for Optical Modulators Vogt TJ, Thiagarajan P, Robinson GY
2252 - 2255	Improved Modulation Contrast of Asymmetric Fabry-Perot Field-Effect Transistor Self-Electro-Optic Effect Devices by in-Situ Thickness Corrections Kuo JM, Dasaro LA, Kuo HC, Pei SS, Chang PC
2256 - 2258	Molecular-Beam Epitaxy Growth of Resonant-Cavity Separate-Absorption-and-Multiplication Avalanche Photodiodes Anselm KA, Murtaza SS, Hu C, Campbell JC, Streetman BG
2259 - 2262	II-VI Blue/Green Laser-Diodes on ZnSe Substrates Boney C, Yu Z, Rowland WH, Hughes WC, Cook JW, Schetzina JF, Cantwell G, Harsch WC
2263 - 2266	Molecular-Beam Epitaxy Growth of Strontium Thiogallate Yang T, Wagner BK, Chaichimansour M, Park W, Wang ZL, Summers CJ
2267 - 2270	Molecular-Beam Epitaxial-Growth of Eu-Doped CaF2 and BaF2 on Si Fang XM, Chatterjee T, Mccann PJ, Liu WK, Santos MB, Shan W, Song JJ
2271 - 2274	Molecular-Beam Epitaxy of High-Quality, Nonstoichiometric Multiple-Quantum Wells Melloch MR, Lahiri I, Nolte DD, Chang JC, Harmon ES, Woodall JM, Li NY, Tu CW
2275 - 2277	Optical Characterization of Low-Temperature-Grown GaAs by Transmission Measurements Above the Band-Gap Streb D, Ruff M, Dankowski SU, Kiesel P, Kneissl M, Malzer S, Keil UD, Dohler GH
2278 - 2281	In-Situ and Ex-Situ Spectroscopic Investigation of Low-Temperature-Grown Gallium-Arsenide by Molecular-Beam Epitaxy Eyink KG, Capano MA, Walck SD, Haas TW, Streetman BG
2282 - 2285	Material Optimization for a Polarized Electron Source from Strained GaAs-Be Grown on an InGaP Pseudosubstrate Bi WG, Tu CW
2286 - 2289	Study of Interface Abruptness of Molecular-Beam Epitaxial GaAs/AlAs Superlattices Grown on GaAs(311) and (100) Substrates Hsu Y, Wang WI, Kuan TS
2290 - 2292	Growth and Characterization of High-Mobility 2-Dimensional Electron Gases Coleridge PT, Wasilewski Z, Zawadzki P
2293 - 2296	Influence of Surface and Interface States on the Electrical-Properties of an Al0.2Ga0.8As/In0.18Ga0.82As Delta-Modulation-Doped Heterostructure Young AP, Wieder HH
2297 - 2300	Low Interface State Density Oxide-GaAs Structures Fabricated by in-Situ Molecular-Beam Epitaxy Hong M, Passlack M, Mannaerts JP, Kwo J, Chu SN, Moriya N, Hou SY, Fratello VJ
2301 - 2304	Carbon Tetrabromide Doping Memory Effect, Incorporation Efficiency, and InAlAs/InGaAs Heterojunction Bipolar-Transistor Application Hwang WY, Micovic M, Miller DL, Geva M
2305 - 2308	Comparison of (Al,Ga)as(110) Grown by Molecular-Beam Epitaxy with as-2 and as-4 Holland MC, Stanley CR
2309 - 2311	X-Valley Related Luminescence from AlAs/(Al,Ga) as Quantum-Well Structures Grown on (112)B GaAs Substrates Henderson RH, Towe E
2312 - 2314	Large Blueshift in the Photoluminescence of Pseudomorphic InGaAs/GaAs Quantum-Wells Grown in Patterned (100)GaAs Grooves and Ridges with Vertical Sidewalls Kamath K, Phillips J, Singh J, Bhattacharya P
2315 - 2317	Room-Temperature Red-Light Photoluminescence from AlGaAs Multiple-Quantum-Well Structures at Very-Low Excitation Intensities Towner FJ
2318 - 2321	Analysis of Molecular-Beam Epitaxy-Grown Ga1-xAlxAs/Ga1-Yalyas Dielectric Stack Mirrors Using Complex Indexes of Refraction Strachan WJ, Reiner J, Goodhue WD, Karakashian AS, Casasanta V, Geller JD
2322 - 2324	Solid Source Molecular-Beam Epitaxy of GaInAsP/InP - Growth Mechanisms and Machine Operation Wamsley CC, Koch MW, Wicks GW
2325 - 2326	Heavy Be Doping of Gap and InxGa1-Xp Tagare MV, Chin TP, Woodall JM
2327 - 2330	Quantum-Confined Stark-Effect Near 1.5-Mu-M Wavelength in Inas0.53P0.47/Gayin1-Yp Strain-Balanced Quantum-Wells Mei XB, Bi WG, Tu CW, Chou LJ, Hsieh KC
2331 - 2334	Study on Improving InxGa1-xAs/Inyga1-Yp Heterointerfaces in Gas-Source Molecular-Beam Epitaxy Yan CH, Tu CW
2335 - 2338	Atomic Antimony for Molecular-Beam Epitaxy of High-Quality III-V Semiconductor Alloys Brewer PD, Chow DH, Miles RH
2339 - 2342	Molecular-Beam Epitaxial-Growth and Characterization of Alxin1-Xsb/InSb Quantum-Well Structures Liu WK, Zhang XM, Ma WL, Winesett J, Santos MB
2343 - 2345	Normal Incidence Infrared Modulators Using Intersubband Transitions in InAs/GaSb/AlSb Stepped Quantum-Wells Grown by Molecular-Beam Epitaxy Du Q, Alperin J, Wang WI
2346 - 2348	Molecular-Beam Epitaxy Growth-Kinetics for Group-III Nitrides Foxon CT, Cheng TS, Hooper SE, Jenkins LC, Orton JW, Lacklison DE, Novikov SV, Popova TB, Tretyakov VV
2349 - 2353	Molecular-Beam Epitaxy Growth and Properties of GaN, AlxGa1-Xn, and AlN on GaN/SiC Substrates Johnson MA, Fujita S, Rowland WH, Bowers KA, Hughes WC, He YW, Elmasry NA, Cook JW, Schetzina JF, Ren J, Edmond JA
2354 - 2356	High-Quality GaN and AlN Grown by Gas-Source Molecular-Beam Epitaxy Using Ammonia as the Nitrogen-Source Yang Z, Li LK, Wang WI
2357 - 2361	Investigation of GaN Deposition on Si, Al2O3, and GaAs Using in-Situ Mass-Spectroscopy of Recoiled Ions and Reflection High-Energy Electron-Diffraction Tafemer WT, Bensaoula A, Kim E, Bousetta A
2362 - 2365	Molecular-Beam Epitaxial-Growth and Properties of Short-Wave Infrared Hg0.3Cd0.7Te Films Rajavel RD, Wu OK, Jamba DM, Delyon TJ
2366 - 2370	Heteroepitaxy of CdTe on (211)Si Using Crystallized Amorphous ZnTe Templates Dhar NK, Wood CE, Gray A, Wei HY, Salamancariba L, Dinan JH
2371 - 2373	Phase Instability of N-CdS Grown by Molecular-Beam Epitaxy Yamada T, Setiagung C, Jia AW, Kobayashi M, Yoshikawa A
2374 - 2377	High-Quality CdTe/Cd1-Xmgxte Quantum-Wells Grown on GaAs(100) and GaAs(111) Substrates by Molecular-Beam Epitaxy Xin SH, Hu BH, Short SW, Bindley U, Yin A, Dobrowolska M, Furdyna JK
2378 - 2380	Surface Phenomena and Kinetics of Si1-xGex/Si (0-Less-Than-or-Equal-to-X-Less-Than-1) Growth by Molecular-Beam Epitaxy Using Si2H6 and Ge/GeH4 Zhang FC, Singh J, Bhattacharya PK
2381 - 2386	Interfacet Mass-Transport and Facet Evolution in Selective Epitaxial-Growth of Si by Gas-Source Molecular-Beam Epitaxy Xiang Q, Li SZ, Wang DW, Wang KL, Couillard JG, Craighead HG
2387 - 2390	Improved Luminescence Quality with an Asymmetric Confinement Potential in Si-Based Type-II Quantum-Wells Grown on a Graded SiGe Relaxed Buffer Fukatsu S, Usami N, Shiraki Y