1 - 3 |
preface [Anonymous] |
4 - 4 |
Preface Gille P, Miller W, Sangwal K, Talik E |
5 - 6 |
Jan Czochralski: Brief sketch of his life and achievements Pajaczkowska A |
7 - 24 |
The historical development of the Czochralski method Uecker R |
25 - 29 |
Ab initio studies of early stages of nitride growth process on silicon carbide Sznajder M, Wachowicz E, Majewski JA |
30 - 32 |
Density functional study of GaN(0001)/AlN(0001) high electron mobility transistor structures Soltys J, Ptasinska M, Piechota J, Krukowski S |
33 - 37 |
Structure of hydrated calcium carbonates: A first-principles study Demichelis R, Raiteri P, Gale JD |
38 - 43 |
Molecular dynamics simulations of organic crystal dissolution: The lifetime and stability of the polymorphic forms of para-amino benzoic acid in aqueous environment Toroz D, Hammond RB, Roberts KJ, Harris S, Ridley T |
44 - 50 |
Formation of regular polyicosahedral and defected crystalline structures in growing Lennard-Jones clusters Polak W |
51 - 55 |
Modeling the nucleation statistics in vapor-liquid-solid nanowires Sibirev NV, Nazarenko MV, Zeze DA, Dubrovskii VG |
56 - 58 |
Crystal nucleation kinetics of polyethylene on active centers Kozisek Z, Hikosaka M, Okada K, Demo P |
59 - 62 |
Effect of nucleation on chirality conversion induced by random fluctuation Katsuno H, Uwaha M |
63 - 66 |
Nucleation and growth of fluoride crystals by agglomeration of the nanoparticles Fedorov PP, Osiko VV, Kuznetsov SV, Uvarov OV, Mayakova MN, Yasirkina DS, Ovsyannikova AA, Voronov VV, Ivanov VK |
67 - 71 |
Analyzing capture zone distributions (CZD) in growth: Theory and applications Einstein TL, Pimpinelli A, Gonzalez DL |
72 - 77 |
Pinning of steps near equilibrium without impurities, adsorbates, or dislocations Akutsu N |
78 - 81 |
Adsorption of gallium on GaN(0001) surface in ammonia-rich conditions: A new effect associated with the Fermi level position Kempisty P, Strak P, Sakowski K, Krukowski S |
82 - 86 |
Kinetics of crystal growth of vivianite, Fe-3(PO4)(2)center dot 8H(2)O, from solution at 25, 35 and 45 degrees C Madsen HEL, Hansen HCB |
87 - 92 |
Ordering of Brownian particles from walls due to an external force Sato M, Katsuno H, Suzuki Y |
93 - 98 |
Global steady state solutions for lamellar eutectic growth in directional solidification Xu JJ, Li XM, Chen YQ |
99 - 105 |
Global instabilities of lamellar eutectic growth in directional solidification Xu JJ, Chen YQ, Li XM |
106 - 110 |
The phenomenon of "cold plume" instability in Czochralski hydrodynamic model: Physical and numerical simulation Berdnikov VS, Prostomolotov AI, Verezub NA |
111 - 115 |
Simplified numerical approach for estimation of effective segregation coefficient at the melt/crystal interface Prostomolotov AI, Verezub NA, Voloshin AE |
116 - 119 |
The effect of the shear flow on particle growth in the undercooled melt Chen MW, Ji XJ, Xu XH, Zheng YH, Qian P, Wang ZD |
120 - 123 |
Hydrodynamical aspects of the floating zone silicon crystal growth process Surovovs K, Muiznieks A, Sabanskis A, Virbulis J |
124 - 127 |
Experimental study of the structural characteristics of Al melts on the basis of Fourier analysis of acoustic emission signals Vorontsov V, Zhuravlev D, Cherepanov A |
128 - 132 |
Numerical design of induction heating in the PVT growth of SiC crystal Su J, Chen XJ, Li Y |
133 - 136 |
Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization Miyamura Y, Harada H, Jiptner K, Chen J, Prakash RR, Nakano S, Gao B, Kakimoto K, Sekiguchi T |
137 - 140 |
Numerical study of silicon crystal ridge growth Barinovs G, Sabanskis A, Muiznieks A |
141 - 145 |
Germanium-doped crystalline silicon: Effects of germanium doping on boron-related defects Zhu XD, Yu XG, Yang DR |
146 - 149 |
Vertical Bridgman growth of sapphire crystals, with thin-neck formation process Hoshikawa K, Taishi T, Ohba E, Miyagawa C, Kobayashi T, Yanagisawa J, Shinozuka M |
150 - 155 |
Modified Bridgman growth and properties of mid-infrared LiInSe2 crystal Wang SP, Zhang XX, Zhang X, Li CL, Gao ZL, Lu QM, Tao XT |
156 - 159 |
Growth of CdWO4 crystals by the low thermal gradient Czochralski technique and the properties of a (010) cleaved surface Galashov EN, Atuchin VV, Kozhukhov AS, Pokrovsky LD, Shlegel VN |
160 - 163 |
Crystal growth and characterization of 4 in. YCa4O(BO3)(3) crystal Tu XN, Zheng YQ, Xiong KN, Shi Y, Shi EW |
164 - 168 |
4 inch langasite crystals grown along SAW-cut orientations Tu XN, Zheng YQ, Xiong KN, Shi Y, Shi EW |
169 - 172 |
Crystal growth and neutron diffraction studies of LixCoO2 bulk single crystals Uthayakumar S, Pandiyan MS, Porter DG, Gutmann MJ, Fan R, Goff JP |
173 - 176 |
Growth of Al doped Ca3TaGa3Si2O14 piezoelectric single crystals with various Al concentrations Kudo T, Yokota Y, Sato M, Tota K, Onodera K, Kurosawa S, Kamada K, Yoshikawa A |
177 - 180 |
Growth and EPR properties of HoVO4 single crystals Leniec G, Kaczmarek SM, Berkowski M, Glowacki M, Skibinski T, Suchocki A, Zhydachevskii YA |
181 - 184 |
Growth problems, thermal expansion and scintillation properties of Ce:Li6Lu(BO3)(3) crystals under thermal neutron excitation Pan SK, Fu ZW, Sun DD, Ren GH, Heng YK |
185 - 189 |
Investigation on the Li, Ba//BO2, F ternary reciprocal system and growth of bulk beta-BaB2O4 crystals Simonova EA, Kononova NG, Shevchenko VS, Kokh AE |
190 - 194 |
Study on rapid growth of 98% deuterated potassium dihydrogen phosphate (DKDP) crystals Zhang LS, Yu GW, Zhou HL, Li L, Xu MX, Liu BA, Ji SH, Zhu LL, Liu FF, Sun X |
195 - 199 |
Bulk single crystals of ammonium acid phthalate grown by the Sankaranarayanan-Ramasamy method for optical limiting applications Arunkumar A, Ramasamy P |
200 - 204 |
Investigation on the SR method growth, etching, birefringence, laser damage threshold and thermal characterization of strontium bis (hydrogen L-malate) hexahydrate single crystal Senthil A, Ramasamy P |
205 - 209 |
Investigations on synthesis, growth and physical characterization of lithium selenoindate single crystals Vijayakumar P, Magesh M, Arunkumar A, Babu GA, Ramasamy P, Nair KGM |
210 - 214 |
Structural, FTIR, thermal and dielectric studies of gel grown manganese-copper mixed levo tartrate crystals Joshi SJ, Tank KP, Vyas PM, Joshi MJ |
215 - 220 |
Organic/inorganic-doped aromatic derivative crystals: Growth and properties Stanculescu F, Ionita I, Stanculescu A |
221 - 226 |
Growth and characterization of struvite-Na crystals Chauhan CK, Joshi MJ |
227 - 232 |
Towards a better understanding of the nucleation behavior of alpha and gamma polymorphs of glycine from aqueous solution in the presence of selective additives by charge compensation mechanism Devi KR, Srinivasan K |
233 - 237 |
Cyclic growth and dissolution of camphor crystals in quinary, ternary, and binary solutions: A study on crystal behavior in storm glass Mitsuya T, Takahashi K, Nagashima K |
238 - 241 |
Crystal distortion of monoclinic hen egg-white lysozyme crystals using X-ray digital topography Wako K, Fujii D, Tsukashima S, Kishi T, Tachibana M, Kojima K |
242 - 247 |
Crystal growth of cholesterol in hydrogels and its characterization Bravo-Arredondo JM, Moreno A, Mendoza ME |
248 - 251 |
Nucleation control and separation of paracetamol polymorphs through swift cooling crystallization process Sudha C, Srinivasan K |
252 - 259 |
Studies on the effect of different operational parameters on the crystallization kinetics of alpha-lactose monohydrate single crystals in aqueous solution Parimaladevi P, Srinivasan K |
260 - 265 |
Controlling of morphology and polymorph of calcium oxalate crystals by using polyelectrolytes Akyol E, Oner M |
266 - 270 |
The effect of ultrasonication on calcium carbonate crystallization in the presence of biopolymer Kirboga S, Oner M, Akyol E |
271 - 274 |
Effect of sample volume on the metastable zone width of potassium nitrate aqueous solutions Mielniczek-Brzoska E |
275 - 278 |
Redox process catalysed by growing crystal strengite, FePO4,2H(2)O, crystallizing from solution with iron(II) and hydroxylamine Madsen HEL |
279 - 284 |
Formation of ZnO rods with varying diameters from epsilon-Zn(OH)(2) Wang J, Xiang L |
285 - 290 |
Global simulations of heat transfer in directional solidification of multi-crystalline silicon ingots under a traveling magnetic field Yu QH, Liu LJ, Li ZY, Su P |
291 - 295 |
Numerical investigation of the effect of a crucible cover on crystal growth in the industrial directional solidification process for silicon ingots Li ZY, Zhang YF, Hu ZY, Zhou GS, Liu LJ |
296 - 301 |
Quality evaluation of multi-crystalline silicon ingots produced in a directional solidification furnace with different theories Zhao WH, Liu LJ, Sun L, Geng AN |
302 - 304 |
Low-frequency noise in diagnostics of power blue InGaN/GaN LEDs Chernyakov AE, Levinshtein E, Talnishnikh NA, Shabunina EI, Shmidt NM |
305 - 307 |
Emission spectra and thermoluminescence of rare-earth-doped bismuth silicate crystals grown by modified Bridgman method Xiong ZY, Xu JY, Zhang Y, Tan ZJ, Shen H, Yang BB, Li YQ, Chen JM, Guo JY |
308 - 313 |
Strain evolution during the growth of epitaxial Ge layers between narrow oxide trenches Kim B, Kim SW, Jang H, Kim JH, Koo S, Kim DH, Min BG, Park SJ, Song JS, Ko DH |
314 - 318 |
Application of microwave spectroscopy to studies of electron transport properties Wolos A, Drabinska A |
319 - 322 |
Defect analyses of selective epitaxial grown GaAs on STI patterned (001) Si substrates Kim SW, Cho YD, Shin CS, Park WK, Kim DH, Ko DH |
323 - 326 |
Synthesis, growth, structural, optical and thermal properties of a new organic salt crystal: 3-nitroanilinium trichloroacetate Selvakumar E, Chandramohan A, Babu GA, Ramasamy P |
327 - 329 |
Precise lattice parameter measurements of Sr0.72Ba0.25Nb2O5.97 single crystals Paszkowski R, Wokulska KB, Dec J, Lukasiewicz T |
330 - 333 |
Polarized Raman spectra in beta-Ga2O3 single crystals Onuma T, Fujioka S, Yamaguchi T, Itoh Y, Higashiwaki M, Sasaki K, Masui T, Honda T |
334 - 337 |
Synthesis, crystal structure, characterization and luminescent properties of KBaTbB2O6 Lian ZP, Sun JF, Ma ZH, Zhang LJ, Shen DZ, Shen GQ, Wang XQ, Yan QF |
338 - 342 |
Magnetism and superconductivity in Sb-doped binary and ternary iron chalcogenide single crystals Cherian D, Nagendra GM, Elizabeth S |
343 - 346 |
Growth of Eu:SrI2 bulk crystals and their scintillation properties Yokota Y, Kurosawa S, Nishimoto K, Kamada K, Yoshikawa A |
347 - 350 |
Modelling of X-ray diffraction curves for GaN nanowires on Si(111) Kladko VP, Kuchuk AV, Stanchu HV, Safriuk NV, Belyaev AE, Wierzbicka A, Sobanska M, Klosek K, Zytkiewicz ZR |
351 - 354 |
Characterization of (Bi0.5Na0.5)(1-x)BaxTiO3 grown by the TSSG method Woll M, Burianek M, Klimm D, Gorfman S, Muhlberg M |
355 - 358 |
Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy Borysiuk J, Sobczak K, Wierzbicka A, Jezierska E, Klosek K, Sobanska M, Zytkiewicz ZR, Lucznik B |
359 - 363 |
In situ observation of melting and crystallization of Si on porous Si3N4 substrate that repels Si melt Itoh H, Okamura H, Asanoma S, Ikemura K, Nakayama M, Komatsu R |
364 - 366 |
Calculations of parameters of RHEED oscillations using different models of the scattering potential Mitura Z |
367 - 371 |
Control of crystallinity of GaN grown on sapphire substrate by metalorganic vapor phase epitaxy using in situ X-ray diffraction monitoring method Iwaya M, Yamamoto T, Tanaka D, Iida D, Kamiyama S, Takeuchi T, Akasaki I |
372 - 375 |
Quantitative monitoring of InAs quantum dot growth using X-ray diffraction Takahasi M |
376 - 380 |
In situ diagnostics of the SiC nanostructures growth process Dabrowska A, Bzymek A, Huczko A |
381 - 387 |
Electronic processes in adatom dynamics at epitaxial semiconductor surfaces studied using MBE-STM combined system Kanisawa K |
388 - 391 |
Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals Taishi T, Kobayashi T, Shinozuka M, Ohba E, Miyagawa C, Hoshikawa K |
392 - 396 |
Polytypism in SiC: Theory and experiment Lebedev A, Tairov Y |
397 - 403 |
Segregation, precipitation and dislocation generation between seeds in directionally solidified mono-like silicon for photovoltaic applications Tsoutsouva MG, Oliveira VA, Camel D, Thi TNT, Baruchel J, Marie B, Lafford TA |
404 - 408 |
Experimental study of grain boundary orientations in multi-crystalline silicon Duffar T, Nwosu CT, Asuo IM, Muzy J, Chau NDQ, Du Terrail-Couvat Y, Robaut F |
409 - 413 |
Behavior of defects in a-plane GaN films grown by low-angle-incidence microchannel epitaxy (LAIMCE) Kuwano N, Ryu Y, Mitsuhara M, Lin CH, Uchiyama S, Maruyama T, Suzuki Y, Naritsuka S |
414 - 417 |
Structure, frequency dependent dielectric properties and domain configuration of PMN-PFN-PT single crystal Luo NN, Li Q, Yan QF, Zhang YL, Xia ZG, Chu XC |
418 - 422 |
The subgrain structure in turbine blade roots of CMSX-4 superalloy Bogdanowicz W, Albrecht R, Sieniawski J, Kubiak K |
423 - 430 |
Synchrotron topography studies of the operation of double-ended Frank-Read partial dislocation sources in 4H-SiC Wang H, Wu F, Byrappa S, Raghothamachar B, Dudley M, Wu P, Zwieback I, Souzis A, Ruland G, Anderson T |
431 - 440 |
Diffusion-induced growth of nanowires: Generalized boundary conditions and self-consistent kinetic equation Dubrovskii VG, Hervieu YY |
441 - 444 |
Molecular beam epitaxial growth of GaSb/GaAs quantum dots on Ge substrates Kunrugsa M, Kiravittaya S, Sopitpan S, Ratanathammaphan S, Panyakeow S |
445 - 448 |
Combustion synthesis of Si-related crystalline nanostructures Soszynski M, Labedz O, Huczko A |
449 - 452 |
Organic luminophor metal complex in inorganic glass matrix-A new hybrid material Avetisov RI, Petrova O, Khomyakov A, Mushkalo O, Akkuzina A, Cherednichenko A, Avetissov I |
453 - 457 |
Red fluorescence in LaF3: Nd3+, Sm3+ nanocrystals grown by rapid microwave assisted synthesis: A comparative analysis of vibrational, thermal and electrical properties Khandpekar MM, Gaurkhede SG |
458 - 461 |
Synthesis of C-70 two-dimensional nanosheets by liquid-liquid interfacial precipitation method Osonoe K, Kano R, Miyazawa K, Tachibana M |
462 - 468 |
Structural and morphologic characterization of zirconia-silica nanocomposites prepared by a modified sol-gel method Stoia M, Barvinschi P, Barvinschi F |
469 - 473 |
Self-propagating high-temperature synthesis (SHS) of crystalline nanomaterials Huczko A, Kurcz M, Dabrowska A, Baranowski P, Bhattarai A, Gierlotka S |
474 - 479 |
Pure and zinc doped nano-hydroxyapatite: Synthesis, characterization, antimicrobial and hemolytic studies Tank KP, Chudasama KS, Thaker VS, Joshi MJ |
480 - 483 |
Investigations of YF3: 1% Er nanocrystals Skuta A, Talik E, Lipinska L, Michalska M, Guzik A, Zajdel P |
484 - 488 |
Effects of La, Gd, or Lu co-doping on crystal growth and scintillation properties of Eu:SrI2 single crystals Nishimoto K, Yokota Y, Kurosawa S, Pejchal J, Kamada K, Chani V, Yoshikawa A |
489 - 493 |
Crystalline nanostructures of heavy metal iodides Fornaro L, Aguiar I, Barthaburu MP, Olivera A, Galain I, Mombru M |
494 - 498 |
Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers Isogai T, Piednoir A, Akada E, Akahoshi Y, Tero R, Harada S, Ujihara T, Tagawa M |
499 - 503 |
MBE grown microcavities based on selenium and tellurium compounds Rousset JG, Kobak J, Janik E, Jakubczyk T, Rudniewski R, Piotrowski P, Sciesiek M, Borysiuk J, Slupinski T, Golnik A, Kossacki P, Nawrocki M, Pacuski W |
504 - 507 |
Cluster diffusion on two-dimensional surface with immobile impurities Katsuno H, Sato M |
508 - 510 |
Contact angle of sapphire melt and bubble generation on crucible material Suzuki T, Shirotsuki K, Taishi T, Hoshikawa K |
511 - 513 |
4H-SiC surface structure transitions during crystal growth following bunching in a fast sublimation process Krzyzewski F |
514 - 517 |
Adsorption of ammonia on hydrogen covered GaN(0001) surface - Density Functional Theory study Kempisty P, Strak P, Sakowski K, Krukowski S |
518 - 522 |
Effects of TMSb overpressure on InSb surface morphology for InSb epitaxial growth using low pressure metalorganic chemical vapor deposition Park S, Jung J, Seok C, Shin KW, Park SH, Nanishi Y, Park Y, Yoon E |
523 - 526 |
Low temperature amorphous silicon carbide thin film formation process on aluminum surface using monomethylsilane gas and trichlorosilane gas Habuka H, Tsuji M, Hirooka A |
527 - 531 |
Structural and optical characterization of AlGaN/GaN layers Jayasakthi M, Ramesh R, Arivazhagan P, Loganathan R, Prabakaran K, Balaji M, Baskar K |
532 - 536 |
Development of scintillating screens based on the single crystalline films of Ce doped (Gd,Y)(3)(Al,Ga,Sc)(5)O-12 multi-component garnets Zorenko Y, Gorbenko V, Savchyn V, Zorenko T, Fedorov A, Sidletskiy O |
537 - 541 |
Rare earth doped LiYF4 single crystalline films grown by liquid phase epitaxy for the fabrication of planar waveguide lasers Starecki F, Bolanos W, Brasse G, Benayad A, Morales M, Doualan JL, Braud A, Moncorge R, Camy P |
542 - 546 |
The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates Teklinska D, Grodecki K, Jozwik-Biala I, Caban P, Olszyna A, Strupinski W |
547 - 549 |
High-temperature growth and characterization of (Er,Yb):YAI(3)(BO3)(4) and NdAl3(BO3)(4) epitaxial layers Volkova E, Maltsev V, Kolganova O, Leonyuk NI |
550 - 553 |
Influence of CdS deposition technique for CdS/CdTe solar cells applications Rubio S, Plaza JL, Dieguez E |
554 - 558 |
Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO2 Renard C, Cherkashin N, Jaffre A, Moliere T, Hallais G, Vincent L, Alvarez J, Mencaraglia D, Michel A, Bouchier D |
559 - 562 |
Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates Scaccabarozzi A, Bietti S, Fedorov A, von Kanel H, Miglio L, Sanguinetti S |
563 - 566 |
Selective growth of (001) GaAs using a patterned graphene mask Hirota Y, Shirai Y, Iha H, Kito Y, Suzuki M, Kato H, Yamamoto N, Maruyama T, Naritsuka S |
567 - 572 |
Spectroscopic characterization of high-purity polycrystalline Bi-Te films grown by thermal evaporation Rapacz R, Balin K, Nowak A, Szade J |
573 - 576 |
Microstructural analysis and optical characteristics of Cu-doped ZnO thin films prepared by DC magnetron sputtering Allabergenov B, Tursunkulov O, Abidov AI, Byeongdae C, Wook JS, Kim S |
577 - 583 |
Growth and luminescent properties of Ce and Ce-Tb doped (Y,Lu,Gd)(2)SiO5:Ce single crystalline films Zorenko Y, Gorbenko V, Savchyn V, Zorenko T, Grinyov B, Sidletskiy O, Fedorov A |
584 - 587 |
Study on Ag modified TiO2 thin films grown by sputtering deposition using sintered target Abidov A, Allabergenov B, Lee J, Gomez-Solis C, Juarez-Ramirez I, Kim S |
588 - 592 |
Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films Fujita S, Kaneko K |
593 - 595 |
Floating zone crystal growth of Lu2PdSi3 silicide Cao C, Blum CGF, Loser W |
596 - 600 |
The effect of process parameters on floating zone crystal growth of selected cuprates Wizent N, Leps N, Behr G, Klingeler R, Buchner B, Loser W |
601 - 604 |
Single crystal growth of the ErPd2Si2 intermetallic compound Cao CD, Klingeler R, Leps N, Behr G, Loser W |
605 - 607 |
Preparation of NdMn1-xFexO3+delta single crystals-Effect of preparation atmosphere and iron doping Mihalik M, Mat'as S, Vavra M, Briancin J, Mihalik M, Fitta M, Kavecansky V, Kopecek J |
608 - 612 |
Single crystal growth and structural characterization of iron telluride doped with chromium and zinc Kruk II, Zajdel P |
613 - 616 |
Single crystal growth in the Ga-Pd system Schwerin J, Muller D, Kiese S, Gille P |
617 - 621 |
Effect of annealing on spinodally decomposed Co2CrAl grown via floating zone technique Omar A, Blum CGF, Loser W, Buchner B, Wurmehl S |
622 - 626 |
Single crystal growth of the intermetallic compound InPd Hahne M, Gille P |
627 - 632 |
Crystal growth of intermetallic clathrates: Floating zone process and ultra rapid crystallization Prokofiev A, Yan X, Ikeda M, Loffler S, Paschen S |
633 - 635 |
Electric-field effects on magnetic properties of molecular beam epitaxially grown thin (Ga,Mn)Sb layers Chang HW, Akita S, Matsukura F, Ohno H |
636 - 639 |
Growth, characterization and study of ferromagnetism of bismuth telluride doped with manganese Fedorchenko IV, Marenkin SF, Avdonin A, Domukhovski V, Dobrowolski W, Heikinheimo J, Korhonen E, Tuomisto F |
640 - 643 |
The impact of position of Mn delta-doping on the formation of CdTe/ZnTe quantum dots with single magnetic ions Gietka K, Kobak J, Janik E, Rousset JG, Borysiuk J, Nawrocki M, Golnik A, Kossacki P, Pacuski W |
644 - 647 |
Photoluminescence studies of giant Zeeman effect in MBE-grown cobalt-based dilute magnetic semiconductors Papaj M, Kobak J, Rousset JG, Janik E, Nawrocki M, Kossacki P, Golnik A, Pacuski W |
648 - 651 |
Growth of GaN films on circle array patterned Si (111) substrates Lin KL, Tran BT, Chung CC, Chang EY |
652 - 656 |
Doping effects in InNI/GaN short-period quantum well structures-Theoretical studies based on density functional methods Strak P, Kempisty P, Sakowski K, Krukowski S |
657 - 660 |
Arrangement of GaN nanowires grown by plasma-assisted molecular beam epitaxy on silicon substrates with amorphous Al2O3 buffers Sobanska M, Wierzbicka A, Klosek K, Borysiuk J, Tchutchulashvili G, Gieraltowska S, Zytkiewicz ZR |
661 - 664 |
Investigation of TMIn pulse duration effect on the properties of InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition Xue JS, Zhang JC, Hao Y |
665 - 669 |
Structural properties of Si-doped beta-Ga2O3 layers grown by MOVPE Gogova D, Wagner G, Baldini M, Schmidbauer M, Irmscher K, Schewski R, Galazka Z, Albrecht M, Fornari R |
670 - 672 |
Growth of corundum-structured (InxGa1-x)(2)O-3 alloy thin films on sapphire substrates with buffer layers Suzuki N, Kaneko K, Fujita S |
673 - 676 |
Suppression of short step bunching generated on 4H-SiC Si-face substrates with vicinal off-angle Masumoto K, Tamura K, Kudou C, Nishio J, Ito S, Kojima K, Ohno T, Okumura H |
677 - 680 |
Growth of SiC by PVT method with different sources for doping by a cerium impurity, CeO2 or CeSi2 Racka K, Tymicki E, Grasza K, Jakiela R, Pisarek M, Surma B, Avdonin A, Skupinski P, Krupka J |
681 - 685 |
Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions Mitani T, Komatsu N, Takahashi T, Kato T, Fujii K, Ujihara T, Matsumoto Y, Kurashige K, Okumura H |
686 - 690 |
Nonstoichiometry and luminescent properties of ZnSe crystals grown from melt and vapor Avetissov I, Chang K, Zhavoronkov N, Davydov A, Mozhevitina E, Khomyakov A, Kobeleva S, Nneustroev S |
691 - 696 |
Studies on structural and optical properties of ZnSe and ZnSSe single crystals grown by CVT method Kannappan P, Dhanasekaran R |
697 - 701 |
Growth, structure and magnetic properties of ZnCr2Se4-single crystals doped by dysprosium Jendrzejewska I, Zajdel P, Maciazek E, Sozanska M |
702 - 707 |
VGF growth of GaAs utilizing heater-magnet module Frank-Rotsch C, Dropka N, Glacki A, Juda U |
708 - 711 |
Chemical vapor transport of chalcopyrite semiconductors: CuGaS2 and AgGaS2 Lauck R, Cardona M, Kremer RK, Siegle G, Bhosale JS, Ramdas AK, Alawadhi H, Miotkowski I, Romero AH, Munoz A, Burger A |
712 - 716 |
Strain effect for different phosphorus content of InGaAs/GaAsP super-lattice in GaAs p-i-n single junction solar cell Watanabe K, Wang YP, Sodabanlu H, Sugiyama M, Nakano Y |
717 - 719 |
Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal Prakash RR, Sekiguchi T, Jiptner K, Miyamura Y, Chen J, Harada H, Kakimoto K |
720 - 726 |
Effects of crucible coating on the quality of multicrystalline silicon grown by a Bridgman technique Pupazan V, Negrila R, Bunoiu O, Nicoara I, Vizman D |
727 - 731 |
Improvement of multi-crystalline silicon ingot growth by using diffusion barriers Hsieh CC, Lan A, Hsu C, Lan CW |
732 - 736 |
Impurities, inclusions, and dislocations in multicrystalline silicon grown from well-mixed and poorly mixed melts Funke C, Schmid E, Gartner G, Reissenweber S, Futterer W, Poklad A, Raabe L, Patzold O, Stelter M |
737 - 739 |
Crystal growth of MCZ silicon with ultralow carbon concentration Nagai Y, Nakagawa S, Kashima K |
740 - 747 |
Three-dimensional phase field modeling of silicon thin-film growth during directional solidification: Facet formation and grain competition Lin HK, Lan CW |
748 - 752 |
Growth of spherical Si crystals on porous Si3N4 substrate that repels Si melt Itoh H, Okamura H, Nakamura C, Abe T, Nakayama M, Komatsu R |
753 - 757 |
Growth of silicon germanium by liquid phase diffusion with applied electric field Armour N, Dost S |
758 - 761 |
Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates Sawano K, Hoshi Y, Kubo S, Yamada S, Nakagawa K, Shiraki Y |
762 - 766 |
Si1-xGex (x >= 0.2) crystal growth in the absence of a crucible Wagner AC, Croll A, Gonik MA, Hillebrecht H, Binetti S, LeDonne A |
767 - 771 |
The low thermal gradient CZ technique as a way of growing of dislocation-free germanium crystals Moskovskih VA, Kasimkin PV, Shlegel VN, Vasiliev YV, Gridchin VA, Podkopaev OI |
772 - 776 |
KNbO3 plate crystal grown by micro-pulling-down method from stoichiometric melt Komatsu R, Masuda N, Ueda M, Itoh H |
777 - 781 |
Floating-zone growth and characterization of Ca(x)Sa(1-x)Nb(2)O(6) crystals Ma YF, Wang Y, Jiang YJ, Xu H, Liu GQ |
782 - 786 |
Bulk growth of ZnGeP2 crystals and their study by X-ray topography Verozubova GA, Okunev AO, Gribenyukov AI |
787 - 790 |
Flux growth and characterization of lead-free Sodium Bismuth Titanate-Barium Titanate single crystals Aravinth K, Babu GA, Ramasamy P |
791 - 794 |
Composite boron nitride neutron detectors Roth M, Mojaev E, Khakhan O, Fleider A, Dul'kin E, Schieber M |
795 - 797 |
Crystal growth of Si2TeO5 by a double crucible Czochralski method Carvalho JF, Fabris ZV, de Oliveira I, Frejlich J |
798 - 801 |
Temperature dependence of PL and EPR spectra of Sr0.33Ba0.67Nb2O6: Cr (0.02 mol%) single crystals Kaczmarek SM, Tsuboi T, Leniec A, Nakai Y, Leniec G, Berkowski M, Huang W |
802 - 806 |
Magnetic and optical properties of Co-doped PbMoO4 single crystals Skibinski T, Kaczmarek SM, Leniec G, Tsuboi T, Nakai Y, Berkowski M, Kowalski Z, Huang W |
807 - 812 |
Crystal growth of CW diode-pumped (Er3+,Yb3+):GdAl3(BO3)(4) laser material Maltsev VV, Koporulina EV, Leonyuk NI, Gorbachenya KN, Kisel VE, Yasukevich AS, Kuleshov NV |
813 - 819 |
Three-dimensional numerical simulation of flow, thermal and oxygen distributions for a Czochralski silicon growth with in a transverse magnetic field Chen JC, Chiang PY, Chang CH, Teng YY, Huang CC, Chen CH, Liu CC |
820 - 823 |
Growth and high temperature properties of Ca3Ta(Al0.9Ga0.1)(3)Si2O14 crystals with ordered langasite structure Xiong KN, Zheng YQ, Tu XN, Zhang SJ, Kong HK, Shi EW |
824 - 827 |
Defects in flux grown KBe2BO3F2 crystals Liu LJ, Xu T, Wang XL, Wang XY, Chen CT |
828 - 832 |
Magnetic and optical properties of Cr/Mn-co-doped Li1.72Na0.28Ge4O9 single crystals Kaczmarek SM, Tsuboi T, Leniec A, Nakai Y, Leniec G, Berkowski M, Huang W |
833 - 838 |
Crystal growth and scintillation properties of selected fluoride crystals for VUV scintillators Pejchal J, Fukuda K, Yamaji A, Yokota Y, Kurosawa S, Kral R, Nikl M, Yoshikawa A |
839 - 843 |
Phase formation and densification peculiarities of Y3Al5O12:Nd3+ during reactive sintering Yavetskiy RP, Baumer VN, Doroshenko AG, Kopylov YL, Kosyanov DY, Kravchenko VB, Parkhomenko SV, Tolmachev AV |
844 - 848 |
Czochralski growth and characterization of MgAl2O4 single crystals Bajor AL, Chmielewski M, Diduszko R, Kisielewski J, Lukasiewicz T, Orlinski K, Romaniec M, Szyrski W |
849 - 852 |
Ceramic material ZnSe(Te) fabricated by nanopowder technology: Fabrication, phase transformations and photoluminescence Kolesnikov NN, Borisenko EB, Borisenko DN, Zverkova II, Tereshchenko AN, Timonina AV, Gnesin IB, Gartman VK |
853 - 856 |
Properties of Li2MoO4 single crystals grown by Czochralski technique Barinova O, Kirsanova S, Sadovskiy A, Avetissov I |
857 - 862 |
New chemical analogs of triglycine sulfate Ghazaryan VV, Fleck M, Petrosyan AM |
863 - 868 |
New mixed salts of L-histidinium(2+) comprising hexafluorosilicate anion Petrosyan M, Fleck M, Ghazaryan VV |
869 - 873 |
Influence of a parallel electric field on the dispersion relation of graphene - A new route to Dirac logics Krukowski S, Soltys J, Borysiuk J, Piechota J |
874 - 877 |
The effect of hippuric acid on crystal growth, structural and optical properties of ZTS single crystals Kumaresh A, Kumar RA, Arivanandhan M, Hayakawa Y |
878 - 882 |
Improved chemical vapor transport growth of transition metal dichalcogenides Ubaldini A, Giannini E |
883 - 887 |
Directional solidification of silicon under the influence of travelling magnetic field Cablea M, Zaidat K, Gagnoud A, Nouri A, Delannoy Y |
888 - 894 |
Numerical simulation of oxygen transport during the Czochralski silicon crystal growth with a cusp magnetic field Chen JC, Guo PC, Chang CH, Teng YY, Hsu C, Wang HM, Liu CC |
895 - 898 |
Influence of the Richardson number on EM force driven flow structures in square-shaped crucible Geza V, Nacke B, Baake E, Jakovics A |
899 - 904 |
Czochralski growth of NaNO3-LiNO3 solid solution single crystals using axial vibrational control technique Avetissov I, Sadovskiy A, Belov S, Khan CK, Mozhevitina E, Sukhanova E, Zharikov E |
905 - 909 |
Colloidal crystallization on tilted substrates under gravitational fields Suzuki Y, Mori A, Sato M, Katsuno H, Sawada T |
910 - 911 |
Report on the Meetings of the International Organization for Crystal Growth Executive Committee, Council and General Assembly held during ICCGE-17 in Warsaw (Poland) 11-16 August 2013 Kakimoto K |