Applied Surface Science

Applied Surface Science, Vol.203 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (195 articles)

1 - 2	SECONDARY ION MASS SPECTROMETRY SIMS XIII - Proceedings of the Thirteenth International Conference on Secondary Ion Mass Spectrometry and Related Topics Nara-Ken New Public Hall, Nara, Japan, November 11-16, 2001 - Foreword Benninghoven A
3 - 4	Secondary ion mass spectrometry SIMS XIII - Proceedings of the Thirteenth International Conference on Secondary Ion Mass Spectrometry and Related Topics Nara-Ken New Public Hall, Nara, Japan, November 11-16, 2001 - Preface Nihei Y
5 - 12	Depth profiling using ultra-low-energy secondary ion mass spectrometry Dowsett MG
13 - 19	Prospects or imaging TOF-SIMS: from fundamentals to biotechnology Winograd N
20 - 26	Apparent and real transient effects in SIMS depth profiling using oxygen bombardment Wittmaack K
27 - 29	The dose dependence of Si sputtering with low energy ions in shallow depth profiling Moon DW, Lee HI
30 - 34	On the correlation between Si+ yields and surface oxygen concentration using in situ SIMS-LEIS Janssens T, Huyghebaert C, Vandervorst W, Gildenpfennig A, Brongersma HH
35 - 38	Oxygen-ion-induced ripple formation on silicon: evidence for phase separation and tentative model Homma Y, Takano A, Higashi Y
39 - 42	Doubly versus singly positively charged oxygen ions back-scattered from a silicon surface under dynamic O-2(+) bombardment Franzreb K, Williams P, Lorincik J, Sroubek Z
43 - 47	Surface roughening of silicon under ultra-low-energy cesium bombardment Kataoka Y, Yamazaki K, Shigeno M, Tada Y, Wittmaack K
48 - 51	Ionization probability of atoms and molecules sputtered from a cesium covered silver surface Meyer S, Staudt C, Wucher A
52 - 55	Quantitative depth profiling at silicon/silicon oxide interfaces by means of Cs+ sputtering in negative mode by ToF-SIMS: a full spectrum approach Ferrari S, Perego A, Fanciulli A
56 - 61	Transient sputter yields, build-up of the altered layer and Ge-segregation as a function of the O-2(+) ion-fluence in SiGe Huyghebaert C, Brijs B, Janssens T, Vandervorst W
62 - 68	Simulation of oxide sputtering and SIMS depth profiling of delta-doped layer Yamamura Y, Ishida M
69 - 71	Big molecule ejection - SIMS vs. MALDI Garrison BJ, Delcorte A, Zhigilei L, Itina TE, Krantzman KD, Yingling YG, McQuaw CM, Smiley EJ, Winograd N
72 - 77	Investigation of the depth range through ultra-thin carbon films on magnetic layers by time-of-flight secondary ion mass spectrometry Tadokoro N, Yuki M, Osakabe K
78 - 81	Ionization probability of sputtered cluster anions: C-n(-) and Si-n(-) Gnaser H
82 - 85	Dynamic behavior of sputtering of implanted projectiles and target atoms under high fluence gallium ion bombardment Ohya K
86 - 89	Electron transfer in ion interactions with chlorine covered silver surfaces Staicu-Casagrande EM, Guillemot L, Lacombe S, Esaulov VA
90 - 93	Towards a model for the formation of positive Si+ ions Janssens T, Huyghebaert C, Vandervorst W
94 - 97	Work function change caused by alkali ion sputtering Villegas A, Kudriavtsev Y, Godines A, Asomoza R
98 - 101	Mass-resolved low-energy back-scattering of alkali ions Franzreb K, Williams P
102 - 105	Mechanism of metal cationization in organic SIMS Wojciechowski I, Delcorte A, Gonze X, Bertrand P
106 - 109	The formation of singly and doubly cationized oligomers in SIMS Delcorte A, Wojciechowski I, Gonze X, Garrison BJ, Bertrand P
110 - 113	Nanocrystals depth profiling by means of Cs+ in negative polarity with dual beam ToF-SIMS Perego A, Ferrari S, Spiga S, Fanciulli A
114 - 117	Investigation of the cluster ion formation process for inorganic compounds in static SIMS Aubriet F, Poleunis C, Bertrand P
118 - 121	The unimolecular decay of Al-n(+/-) and Si-n(+/-) sputtered clusters Dzhemilev NK, Bekkerman AD, Maksimov SE, Tugushev VI
122 - 125	Features of non-additive sputtering for various "molecular projectile-solid" systems Belykh SF, Kovarsky AP, Palitsin VV, Adriaens A, Adams F
126 - 129	Effect of the projectile parameters on the charge state formation process in solid sputtering Belykh SF, Palitsin VV, Adriaens A, Adams F
130 - 133	The energy spectra of secondary ions sputtered from Si and SiGe by ultra-low-energy primary ions Bellingham J, Dowsett MG
134 - 138	Ionization probability changes of the Si+ ions during the transient for 3 keV O-2(+) bombardment of Si Huyghebaert C, Janssens T, Brijs B, Vandervorst W
139 - 142	Simulation of SiO2 build-up in silicon under oxygen bombardment Guzman B, Serrano JJ, Blanco JM, Aguilar M, Arneziane O
143 - 147	MD simulation of cluster ejection due to sputtering by polyatomic projectiles Muramoto T, Yamamura Y
148 - 151	Enhancement of cluster yield under gold dimer oblique bombardment of the silicon surface Medvedeva A, Wojciechowski I, Garrison BJ
152 - 155	Observation of ripple formation on O-2(+)-irradiated GaN surfaces using atomic force microscopy Kanazawa A, Takano A, Higashi Y, Suzuki M, Homma Y
156 - 159	Transient effects induced through ripple topography growth during Cs+ depth profile analysis of Si at high incidence angles van der Heide PAW, Lima MS, Perry SS, Bennett J
160 - 165	Molecular SIMS for organic layers: new insights Bertrand P, Delcorte A, Garrison BJ
166 - 169	A microscopic view of organic sample sputtering Delcorte A, Bertrand P, Garrison BJ
170 - 174	Ion-to-neutral conversion in time-of-flight secondary ion mass spectrometry Szymczak W, Wittmaack K
175 - 179	ToF-SIMS characterization of molecular ions from Fomblin Z-DOL on Ag substrates Abe Y, Okuhira H
180 - 183	Effects of sample preparation on ion yield in the study of inorganic salts by s-SIMS Aubriet F, Poleunis C, Bertrand P
184 - 188	Determination of nitrogen in silicon carbide by secondary ion mass spectrometry Ber BY, Kazantsev DY, Kovarsky AP, Yafaev RR
189 - 193	Cation Mass Spectrometer: towards an optimisation of MCsx+ cluster analysis Wirtz T, Migeon HN, Scherrer H
194 - 197	Nanoscale SIMS analysis: the next generation in local analysis Nojima A, Tomiyasu B, Kanda Y, Owari M, Nihei Y
198 - 200	Prospects for imaging with TOF-SIMS using gold liquid metal ion sources Walker AV, Winograd N
201 - 204	Rapid screening of molecular arrays using imaging TOF-SIMS Xu JY, Braun RM, Winograd N
205 - 208	Development of a chemically assisted micro-beam etching system for three-dimensional microanalysis Tanaka Y, Karashima M, Takanashi K, Sakamoto T, Owari M, Nihei Y
209 - 213	Secondary ion mass spectrometry using cluster primary ion beams Gillen G, Fahey A
214 - 218	Secondary ion mass spectrometry with gas cluster ion beams Toyoda N, Matsuo J, Aoki T, Yamada I, Fenner DB
219 - 222	Development of a C-60(+) ion gun for static SIMS and chemical imaging Wong SCC, Hill R, Blenkinsopp P, Lockyer NP, Weibel DE, Vickerman JC
223 - 227	Development and experimental application of a gold liquid metal ion source Davies N, Weibel DE, Blenkinsopp P, Lockyer N, Hill R, Vickerman JC
228 - 234	A resonance photoionization sputtered neutral mass spectrometry instrument for submicron microarea analysis of ULSI devices Shichi H, Osabe S, Sugaya M, Ino T, Kakibayashi H, Kanehori K, Mitsui Y
235 - 237	Trace element analysis of precious metals in minerals by time-of-flight resonance ionization mass spectrometry Dimov SS, Chryssoulis SL
238 - 243	Nonresonant Laser-SNMS and TOF-SIMS analysis of sub-mu m structures Kollmer F, Bourdos N, Kamischke R, Benninghoven A
244 - 247	Estimation of useful yield in surface analysis using single photon ionisation King BV, Pellin MJ, Moore JF, Veryovkin IV, Savina MR, Tripa CE
248 - 251	Energy distributions and excitation probability of nickel atoms sputtered from Ni3Al, NiAl and Ni Tan M, King BV
252 - 255	Steady-state surface concentration profiles of primary ion species during secondary ion mass spectrometry measurements Yoshikawa S, Morita H, Toujou F, Matsunaga T, Tsukamoto K
256 - 259	Surface roughening effect in sub-keV SIMS depth profiling Liu R, Ng CM, Wee ATS
260 - 263	Correction for the loss of depth resolution with accurate depth calibration when profiling with Cs+ at angles of incidence above 50 degrees to normal Kelly JH, Dowsett MG, Augustus P, Beanland R
264 - 267	Accurate SIMS depth profiling for ultra-shallow implants using backside SIMS Hongo C, Tomita A, Takenaka M, Murakoshi A
268 - 272	Detailed evaluation of the analytical resolution function Wittmaack K
273 - 276	On determining accurate positions, separations, and internal profiles for delta layers Dowsett MG, Kelly JH, Rowlands G, Ormsby TJ, Guzman B, Augustus P, Beanland R
277 - 280	Low energy dual beam depth profiling: influence of sputter and analysis beam parameters on profile performance using TOF-Sims Grehl T, Mollers R, Niehuis E
281 - 284	D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides Bersani M, Giubertoni D, Barozzi M, Elacob E, Vanzetti L, Anderle M, Lazzeri P, Crivelli B, Zanderigo F
285 - 289	Transient processes and structural transformations in Si(x)Gel(1-x) layers during oxygen implantation and sputtering Kruger D, Efremov AA, Murota J, Tillack B, Kurps R, Romanova GP
290 - 293	Metal implant standards for surface analysis by TOF-SIMS and dynamic SIMS: comparison with TRIM simulation Li-Fatou AV, Douglas M
294 - 297	Evaluation of SIMS depth resolution using delta-doped multilayers and mixing-roughness-information depth model Takano A, Homma Y, Higashi Y, Takenaka H, Hayashi S, Goto K, Inoue M, Shimizu R
298 - 301	SIMS study of depth profiles of delta-doped boron/silicon alternating layers by low-energy ion beams Hayashi S, Takano A, Takenaka H, Homma Y
302 - 305	Multiple As delta layered Si thin films for SIMS quantification and depth scale calibration Cho SB, Shon HK, Kang HJ, Hong TE, Kim HK, Lee HI, Kim KJ, Moon DW
306 - 309	Transient effects noted during Cs+ depth profile analysis of Si at high incidence angles van der Heide PAW, Bennett J
310 - 313	Using SIMS and the NIST standard reference material #2137 to calibrate standards used in the B-11 (p, alpha) Be-8 nuclear reaction analysis of B in Si Magee CW, Jacobson DC
314 - 317	The features of using of BO2- secondary ions for SIMS depth profiling of shallow boron implantation in silicon Simakin SG, Smirnov VK
318 - 322	Six months repeatability of D-SIMS depth profile using an ultra-low-energy probe Li ZP, Hoshi T, Oiwa R
323 - 328	Characteristics of ultra-low-energy Cs+ ion beam bombardments Li ZP, Hoshi T, Oiwa R
329 - 334	Surprisingly large apparent profile shifts of As and Sb markers in Si bombarded with ultra-low-energy Cs ion beams Kataoka Y, Shigeno M, Tada Y, Wittmaack K
335 - 338	SIMS backside depth profiling of ultra shallow implants Yeo KL, Wee ATS, See A, Liu R, Ng CM
339 - 342	Dual ion beam analysis of boron implanted SiO2/silicon interface Hayashi S, Yanagihara K
343 - 347	A floating low energy electron gun (FLEG) for charge compensation in SIMS and other applications Gibbons R, Dowsett MG, Kelly J, Blenkinsopp P, Hill R, Richards D, Loibl N
348 - 353	Comparison between Xe+ and O-2(+) primary ions, at low impact energy, on B delta-doping, SiGe-Si superlattice and Al/Ti multilayer structures Laugier F, Holliger P, Dupuy JC, Baboux N
354 - 358	B4C/Mo/Si and Ta2O5/Ta nanostructures analysed by ultra-low energy argon ion beams Konarski P, Mierzejewska A
359 - 362	SIMS depth profiling of N and In in a ZnO single crystal Park DC, Sakaguchi I, Ohashi N, Hishita S, Haneda H
363 - 366	Determination of the variation in sputter yield in the SIMS transient region using MEIS Dowsett MG, Ormsby TJ, Gard FS, Al-Harthi SH, Guzman B, McConville CF, Noakes TCQ, Bailey P
367 - 370	Investigating oxygen flooding at oblique 2 and 1 keV oxygen sputtering for microelectronics support applications Jahnel F, von Criegern R
371 - 376	An (un)solvable problem in SIMS: B-interfacial profiling Vandervorst W, Janssens T, Loo R, Caymax M, Peytier I, Lindsay R, Fruhauf J, Bergmaier A, Dollinger G
377 - 382	Estimation of ultra-shallow implants using SIMS NRA and chemical analysis Tomita M, Suzuki M, Tachibe T, Kozuka S, Murakoshi A
383 - 386	LEXES and SIMS as complementary techniques for full quantitative characterization of nanometer structures Hombourger C, Staub R, Schuhmacher M, Desse F, de Chambost E, Hitzman C
387 - 390	Copper drift in low dielectric constant insulator films caused by O-2(+) primary ion beam Shibahara K, Onimatsu D, Ishikawa Y, Oda T, Kikkawa T
391 - 395	Depth scale calibration of SIMS depth profiles by means of an online crater depth measurement technique De Chambost E, Monsallut P, Rasser B, Schuhmacher M
396 - 399	Extremely deep SIMS profiling: oxygen in FZ silicon Barcz A, Zielinski M, Nossarzewska E, Lindstroem G
400 - 403	TOF-SIMS as a rapid diagnostic tool to monitor the growth mode of thin (high k) films Conard T, Vandervorst W, Petry J, Zhao C, Besling W, Nohira H, Richard O
404 - 408	Application of SIMS in microelectronics Tsukamoto K, Yoshikawa S, Toujou F, Morita H
409 - 413	SIMS depth profiling of advanced gate dielectric materials Bennett J, Gondran C, Sparks C, Hung PY, Hou A
414 - 417	Quantitative depth profiling of SiOxNy layers on Si van Berkum JGM, Hopstaken MJP, Snijders JHM, Tamminga Y, Cubaynes FN
418 - 422	SIMS and high-resolution RBS analysis of ultrathin SiOxNy films Kimura K, Nakajima K, Kobayashi H, Miwa S, Satori K
423 - 426	Quantitative depth profiling of nitrogen in ultrathin oxynitride film with low energy SIMS Shon HK, Kang HJ, Hong TE, Chang HS, Kim KJ, Kim HK, Moon DW
427 - 432	Solubility limits of dopants in 4H-SiC Linnarsson MK, Zimmermann U, Wong-Leung J, Schoner A, Janson MS, Jagadish C, Svensson BG
433 - 436	Adventures in molecular electronics: how to attach wires to molecules Haynie BC, Walker AV, Tighe TB, Allara DL, Winograd N
437 - 440	Gate oxide properties investigated by TOF-SIMS profiles on CMOS devices Zanderigo F, Brazzelli D, Rocca S, Pregnolato A, Grossi A, Queirolo G
441 - 444	TOF-SIMS depth profiling of SIMON Ge X, Gui D, Chen X, Cha LZ, Brox O, Benninghoven A
445 - 448	TOF-SIMS study of adhesive residuals on device contact pads after wafer taping and backgrinding Lazzeri P, Franco G, Garozzo M, Gerardi C, Iacob E, Lo Faro A, Privitera A, Vanzetti L, Bersani M
449 - 452	TOF-SIMS measurement of ultra-thin SiO2 films prepared by the graded-etching method Shibamori T, Muraji Y, Man N, Karen A
453 - 456	SIMS analysis of insulating multilayer including silicon nitride Ueki Y, Kawashima T, Ishiwata O
457 - 460	SIMS quantification of low concentration of nitrogen doped in silicon crystals Fujiyama N, Karen A, Sams DB, Hockett RS, Shingu K, Inoue N
461 - 464	Round robin study of chlorine, sulfur and carbon in copper films from Taiwan SIMS users Chen CY, Ling YC, Hwang JF, Lee JH, Wen ML, Hwang MC, Lin GC, Deng RC
465 - 469	SIMS round-robin study of depth profiling of arsenic implants in silicon Tomita M, Hasegawa T, Hashimoto S, Hayashi S, Homma Y, Kakehashi S, Kazama Y, Koezuka K, Kuroki H, Kusama K, Li Z, Miwa S, Miyaki S, Okamoto Y, Okuno K, Saito S, Sasaki S, Shichi H, Shinohara H, Toujou F, Ueki Y, Yamamoto Y
470 - 472	Evaluation of the Cu-CMP process by TOF-SIMS and XPS: time dependence of Cu surface adsorbents and oxidation states Nishi A, Sado M, Miki T, Fukui Y
473 - 477	Surface chemical state analysis of electroplated Cu film under, Cu-CMP process by means of TOF-SIMS Miyoshi H, Saito R, Kudo M
478 - 481	SIMS analysis of hydrogen diffusion and trapping in CVD polycrystalline diamond Jomard F, Ballutaud D
482 - 485	Secondary ion mass spectrometry analysis of In-doped p-type GaN films Chiou CY, Wang CC, Ling YC, Chiang CI
486 - 489	SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP Maier M, Serries D, Geppert T, Kohler K, Gullich H, Herres N
490 - 494	The effect of Se and Zn pre-deposition on thermal diffusion of elements across the ZnSe/GaAs interface studied by SIMS Gard FS, Riley JD, Dowsett MG, Prince K
495 - 499	A correlation of TOF-SIMS and TXRF for the analysis of trace metal contamination on silicon and gallium arsenide Mowat I, Lindley P, McCaig L
500 - 503	Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resistive Si1-xGex alloy layers Dowsett MG, Morris R, Chou PF, Corcoran SF, Kheyrandish H, Cooke GA, Maul JL, Patel SB
504 - 507	SIMS study of oxygen in- and out-diffusion in SIMOX wafers during thermal annealing using O-18 implantation Hayashi S, Sasaki T, Kawamura K, Matsumura A, Yanagihara K, Tanaka K
508 - 511	Characterization of ion-induced sodium migration in various kinds of silicon oxide films Saito R, Nagatomo A, Makino N, Hayashi S, Kudo A
512 - 515	SIMS depth profile of copper in low-k dielectrics under electron irradiation for charge compensation Yamada K, Fujiyama N, Sameshima J, Kamoto R, Karen A
516 - 519	Characterization of high-k gate dielectric films using SIMS Yamamoto T, Morita N, Sugiyama N, Karen A, Okuno K
520 - 522	Direct determination of p/n junction depth by the emission of matrix complex ions Alexandrov OV, Kazantsev DY, Kovarsky AP
523 - 526	Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacks De Witte H, Conard T, Vandervorst W, Gijbels R
527 - 531	Imaging by time-of-flight secondary ion mass spectrometry of plasma patterned metal and oxide thin films Coullerez G, Baborowski J, Viornery C, Chevolot Y, Xanthopoulos N, Ledermann N, Muralt P, Setter N, Mathieu HJ
532 - 537	ToF-SIMS quantitative approaches in copolymers and polymer blends Weng LT, Chan CM
538 - 540	Analysis of surface composition of isotopic polymer blend based on time-of-flight secondary ion mass spectroscopy Takahara A, Kawaguchi D, Tanaka K, Tozu M, Hoshi T, Kajiyama T
541 - 546	TOF-SIMS characterization of industrial materials: from silicon wafer to polymer Karen A, Man N, Shibamori T, Takahashi K
547 - 550	Characterization of polymer solar cells by TOF-SIMS depth profiling Bulle-Lieuwma CWT, van Gennip WJH, van Duren JKJ, Jonkheijm P, Janssen RAJ, Niemantsverdriet JW
551 - 555	G-SIMS of crystallisable organics Gilmore IS, Seah MP
556 - 560	Surface evolution of polycarbonate/polyethylene terephthalate blends induced by thermal treatments Licciardello A, Auditore A, Samperi F, Puglisi C
561 - 565	The influence of primary ion bombardment conditions on the secondary ion emission behavior of polymer additives Kersting R, Hagenhoff B, Pijpers P, Verlaek R
566 - 570	Quantitative analysis of styrene butadiene copolymers using S-SIMS and LA-FTICRMS Ruch D, Boes C, Zimmer R, Muller JF, Migeon HN
571 - 574	Antioxidant segregation and crystallisation at polyester surfaces studied by ToF-SIMS Medard N, Benninghoven A, Rading D, Licciardello A, Auditore A, Duc TM, Montigaud H, Vernerey F, Poleunis C, Bertrand P
575 - 579	Time-of-flight-SIMS and XPS characterization of metal doped polymers Gross T, Retzko I, Friedrich I, Unger W
580 - 585	TOF-SIMS study of organosilane adsorption on model hydroxyl terminated surfaces Houssiau L, Bertrand P
586 - 589	TOF-SIMS study on the adsorption behavior of mixtures of a phosphite and a friction modifier onto ferrous material Murase A, Ohmori T
590 - 595	Characterization of lubricants for fluid dynamic bearing by TOF-SIMS Toujou F, Tsukamoto K, Matsuoka K
596 - 599	Tribological characterisation of an organic coating by the use of ToF-SIMS Bexell U, Carlsson P, Olsson A
600 - 604	Investigating the difficulty of eliminating flood gun damage in TOF-SIMS Gilmore IS, Seah MP
605 - 608	Characterization of methyl methacrylate oligomers using secondary ion mass spectrometry, APCI mass spectrometry and molecular orbital theory Takeuchi T, Iwai K, Momoji K, Miyamoto I, Saiki K, Hashimoto K
609 - 613	Elemental distribution analysis of positive electrode material for a nickel metal hydride battery Takanashi K, Yoshida M, Sakamoto T, Ono N, Tanaka Y, Owari M, Nihei Y
614 - 619	Imaging TOF-SIMS for the surface analysis of silver halide microcrystals Lenaerts J, Gijbels R, Van Vaeck L, Verlinden G, Geuens I
620 - 624	Insights into ToF-SIMS analysis of dendritic macromolecules: cationization and PCA to probe their molecular weight on surfaces Coullerez G, Lundmark S, Malkoch M, Magnusson H, Malmstrom E, Hult A, Mathieu HJ
625 - 629	A study of defect structures in oxide materials by secondary ion mass spectrometry Haneda H
630 - 633	Use of isotopic tracers and SIMS analysis for evaluating the oxidation behaviour of protective coatings on nickel based superalloys Alibhai AA, Chater RJ, McPhail DS, Shollock BA
634 - 638	Determination of proton and oxygen movements in solid oxides by the tracer gases exchange technique and secondary ion mass spectrometry Horita T, Yamaji K, Sakai N, Xiong YP, Kato T, Yokokawa H, Kawada T
639 - 643	Measurement of oxyg en grain boundary diffusion in mullite ceramics by SIMS depth profiling Fielitz P, Borchardt G, Schmucker M, Schneider H, Willich P
644 - 647	Speciation of surface gold in pressure oxidized carbonaceous gold ores by TOF-SIMS and TOF-LIMS Dimov SS, Chryssoulis SL, Sodhi RN
648 - 651	ToF-SIMS imaging of dopant diffusion in optical fibers Hellsing M, Fokine M, Claesson A, Nilsson LE, Margulis W
652 - 655	Light element distribution in ZnO thin film deposited by electron cyclotron resonance assisted chemical vapor deposition Sakaguchi I
656 - 659	SIMS analysis of multi-diffusion profiles of lanthanides in stabilized zirconias Weber S, Scherrer S, Scherrer H, Kilo M, Taylor MA, Borchardt G
660 - 664	Low energy SIMS characterisation of ultra thin oxides on ferrous alloys Rees EE, McPhail DS, Ryan MP, Kelly J, Dowsett MG
665 - 668	Hydrogen absorption of LaNi5 after LiOD treatment and surface characterization by TOF-SIMS Izawa C, Uchida HH, Okuhira H, Nishi Y
669 - 672	Chemical characterization of combustion deposits by TOF-SIMS Sjovall P, Lausmaa J, Tullin C, Hogberg J
673 - 678	A new shielded SIMS instrument for analysis of highly radioactive materials Rasser B, Desgranges L, Pasquet B
679 - 683	SIMS ion microscopy as a novel, practical tool for subcellular chemical imaging in cancer research Chandra S
684 - 688	Fine structures and ion images on fresh frozen dried ultrathin sections by transmission electron and scanning ion microscopy Takaya K, Okabe M, Sawataishi M, Takashima H, Yoshida T
689 - 692	Genome diagnostics with TOF-SIMS Arlinghaus HF, Ostrop M, Friedrichs O, Feldner JC
693 - 697	ToF-SIMS chemical mapping study of protein adsorption onto stainless steel surfaces immersed in saline aqueous solutions Poleunis C, Rubio C, Compere C, Bertrand P
698 - 703	Characterization of adsorbed protein films using time-of-flight-secondary ion mass spectrometry and multivariate analysis Wagner MS, Castner DG
704 - 709	Quantitative time-of-flight secondary ion mass spectrometry for the characterization of multicomponent adsorbed protein films Wagner MS, Shen M, Horbett TA, Castner DG
710 - 713	Detection of chlorinated pesticides on the surface of fungus using ToF-SIMS Cliff B, Weibel DE, Lockyer NP, Jungnickel H, Stephens G, Vickerman JC
714 - 717	Zinc detection in the islet of Langerhans by SIMS Okabe M, Yoshida T, Yoshii R, Sawataisi M, Takaya K
718 - 721	Detection and quantification of benzodiazepines in hair by ToF-SIMS: preliminary results Audinot JN, Yegles M, Labarthe A, Ruch D, Wennig R, Migeon HN
722 - 725	TOF-SIMS investigation of the immobilization process of peptide nucleic acids Feldner JC, Ostrop A, Friedrichs O, Sohn S, Lipinsky D, Gunst U, Arlinghaus HF
726 - 729	Subcellular imaging of freeze-fractured cell cultures by TOF-SIMS and Laser-SNMS Fartmann M, Dambach S, Kriegeskotte C, Lipinsky D, Wiesmann HP, Wittig A, Sauerwein W, Arlinghaus HF
730 - 733	Development of instrumentation for routine ToF-SIMS imaging analysis of biological material Cliff B, Lockyer NP, Corlett C, Vickerman JC
734 - 737	Time-of-flight secondary ion mass spectrometry of fatty acids in rat retina Gong H, Amemiya T, Takaya K, Tozu M, Ohashi Y
738 - 741	Changes of vitamins A and E in the rat retina under light and dark conditions detected with TOF-SIMS Amemiya T, Gong H, Takaya K, Tozu M, Ohashi Y
742 - 744	Trace elements in lenses of normal Wistar Kyoto rats Kinoshita A, Gong HQ, Amemiya T, Takaya K, Tozu M, Ohashi Y
745 - 750	Application of SIMS to the analysis of environmental samples Seyama H
751 - 756	Surface composition of atmospheric aerosol: individual particle characterization by TOF-SIMS Peterson RE, Tyler BJ
757 - 761	SIMS depth profiling of working environment nanoparticles Konarski P, Iwanejko I, Mierzejewska A
762 - 766	Analysis of surface composition and internal structure of fly ash particles using an ion and electron multibeam microanalyzer Sakamoto T, Shibata K, Takanashi K, Owari M, Nihei Y
767 - 771	ToF-SIMS and XPS characterisation of urban aerosols for pollution studies Lazzeri R, Clauser G, Iacob E, Lui A, Tonidandel G, Anderle M
772 - 774	Analysis of condensation dusts from the heavy oil combustion using TOF-SIMS Oishi S, Shirahase M, Sado M, Oiwa R
775 - 778	TOF-SIMS measurements for toxic air pollutants adsorbed on the surface of airborne particles Tomiyasu B, Hoshi T, Owari M, Nihei Y
779 - 784	SIMS depth profiling analysis of electrical arc residues in fire investigation Chen CY, Ling YC, Wang JT, Chen HY
785 - 788	TOF-SIMS characterization of planktonic foraminifera Vering G, Crone C, Bijma J, Arlinghaus HF
789 - 792	Application of SIMS to silver tarnish at the British Museum Hallett K, Thickett D, McPhail DS, Chater RJ
793 - 797	High precision isotope micro-imaging of materials Yurimoto L, Nagashima K, Kunihiro T
798 - 801	Oxygen isotopic measurements on the Cameca Nanosims 50 Slodzian G, Hillion F, Stadermann FJ, Horreard F
802 - 805	Silicon isotope fractionation during FZ growth of silicon crystals Morishita Y, Satoh H
806 - 809	Application of high precision SIMS Al-26-Mg-26 analyses to the early solar system chronology Kita NT, Mostefaoui S, Liu YZ, Togashi S, Morishita Y
810 - 813	In situ U-Pb dating and REE analyses of phosphates in extraterrestrial materials Terada K, Sano Y
814 - 817	Melt contribution to partitioning of trace element between plagioclase and basaltic magma of Fuji volcano, Japan Togashi S, Kita NT, Tomiya A, Morishita Y, Imai N
818 - 824	High resolution static SIMS imaging by time of flight SIMS Hoshi T, Kudo M
825 - 831	Interpretation of TOF-SIMS images: multivariate and univariate approaches to image de-noising, image segmentation and compound identification Tyler B
832 - 835	Ion image enhancement using in-situ implantation of Cs+ and O-2(+) ions Seki S, Tamura H, Saitoh W
836 - 841	Failure analysis of liquid crystal display panel by time-of-flight secondary ion mass spectrometry Miyaki S, Yoshida A, Yamamoto Y, Takeuchi K
842 - 846	Probing molecules on a surface by Cs+ reactive ion scattering: identification of C2Hx (x <= 4) hydrocarbons Kang H, Lee CW, Hwang CH, Kim CM
847 - 850	Surface metal standards produced by ion implantation through a removable layer Schueler BW, Granger CN, McCaig L, McKinley JM, Metz J, Mowat I, Reich DF, Smith S, Stevie FA, Yang MH
851 - 854	Quantitative analysis of the top 5 nm of boron ultra-shallow implants Bellingham J, Dowsett MG, Collart E, Kirkwood D
855 - 858	Time-of-flight secondary ion mass spectrometry (TOF-SIMS) for high-throughput characterization of biosurfaces Roberson S, Sehgal A, Fahey A, Karim A
859 - 862	Estimation of ToF-SIMS information depth in micro-corrosion analysis Abe Y, Komatsu M, Okuhira H
863 - 866	Chemical state analysis of ZnO/Ag film interface utilizing the matrix effect Yamamoto Y, Hayashi Y, Tachibana Y, Shimodaira N, Kudo M
867 - 870	Oxidizing mechanism of beryllium-copper in alkaline solution Kuroki H, Kawarai H
871 - 874	Spectral characterization of perfluoropolyethers lubricant irradiated by laser light Zhu L, Liew T
875 - 879	Structural characterization of various ionomers by time-of-flight secondary ion mass spectrometry Lee Y, Han S, Kwon MH, Lim H, Kim YS, Chun H, Kim JS