Applied Surface Science

Applied Surface Science, Vol.216, No.1-4 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (108 articles)

1 - 1	ISCSI-4 - Proceedings of the Fourth International Symposium on the Control of Semiconductor Interfaces - Karuizawa, Japan, October 21-25, 2002 Hiraki A
2 - 7	The national Si-Soft Project Chang CY, Trappey CV
8 - 14	Coexistence of passive and active oxidation for O-2/Si(001) system observed by SiO mass spectrometry and synchrotron radiation photoemission spectroscopy Teraoka Y, Moritani K, Yoshigoe A
15 - 18	Adsorption of Si atom on H-terminated Si(001)-2 x 1 surface Hashizume T, Kajiyama H, Suwa Y, Heike S, Matsuura S, Nara J, Ohno T
19 - 23	Temperature dependence of flat Ge/Si(001) heterostructures as observed by CAICISS Tsushima R, Katayama M, Fujino T, Shindo M, Okuno T, Oura K
24 - 29	Anomalously large band-bending for HF-treated p-Si surfaces Watanabe D, En A, Nakamura S, Suhara M, Okumura T
30 - 34	Stochastic motion of 7 x 7 kinks at monoatomic step edges on the Si(111) surface Fukuda T, Maeda S, Nakayama H
35 - 40	Study of Sb adsorption on the Si(0 0 1)-In(4 x 3) surface Gruznev D, Furukawa Y, Mori M, Tambo T, Lifshits VG, Tatsuyama C
41 - 45	Surface stress relaxation in SiO2 films by plasma nitridation and nitrogen distribution in the film Itakura AN, Shimoda M, Kitajima M
46 - 53	Novel post CMP cleaning using buffered HF solution and ozone water Yeh CF, Hsiao CW, Lee WS
54 - 58	Investigation of SiC clean surface and Ni/SiC interface using scanning tunneling microscopy Hattori N, Hirai M, Kusaka M, Iwami M
59 - 64	Hydrogen-related structural changes on CVD diamond (100) surfaces by ultra-high-vacuum annealing Nakamura J, Fukumoto S, Teraji T, Murakami H, Ito T
65 - 71	Field-induced effects of implanted Ga on high electric field diamond devices fabricated by focused ion beam Hamada M, Teraji T, Ito T
72 - 77	Effect of Ni-Cu substrates on phase hexagonal and cubic boron nitride selection of thin films Kotake S, Hasegawa T, Kamiya K, Suzuki Y, Masui T, Kangawa Y, Nakamura K, Ito T
78 - 82	Anisotropy of lateral growth rate in liquid phase epitaxy of {001} InP Kochiya T, Oyama Y, Suto K, Nishizawa JI
83 - 87	Lattice distortion near InGaP compound semiconductor surface due to surface treatment of bias sputtering Emoto T, Yoshida Y, Akimoto K, Ichimiya A, Kikuchi S, Itagaki K, Namita H
88 - 93	Laser-stimulated control of interfaces at grain boundaries in polycrystalline CdxHg1-xTe films Gnatyuk VA, Aoki T, Hatanaka Y
94 - 97	Passivation of defects in polycrystalline Cu2O thin films by hydrogen or cyanide treatment Ishizuka S, Kato S, Okamoto Y, Sakurai T, Akimoto K, Fujiwara N, Kobayashi H
98 - 105	Modification of GaAs and copper surface by the formation of SiO2 aerogel film as an interlayer dielectric Park SW, Jung SB, Kang MG, Park HH, Kim HC
106 - 112	Interface formation and properties of alpha-NPD thermally deposited on CVD diamond films Chun MS, Teraji T, Ito T
113 - 118	Contactless electrical characterization of surface and interface of SOI materials Nakamura S, Watanabe D, En A, Suhara M, Okumura T
119 - 123	Device-quality GaN-dielectric interfaces by 300 degrees C remote plasma processing Bae C, Rayner GB, Lucovsky G
124 - 132	Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3 Hinkle C, Lucovsky G
133 - 140	Phase transition from Langmuir-type adsorption to two-dimensional oxide island growth during oxidation on Si(001) surface Takakuwa Y, Ishida F, Kawawa T
141 - 148	Theoretical study on the initial processes of nitridation of silicon thin film Yoshida S, Doi K, Nakamura K, Tachibana A
149 - 155	Correlation between deposition parameters and structural modification of amorphous carbon nitride (a-CNx) film in magnetron sputtering Jung HS, Park HH
156 - 162	The role of vacuum ultraviolet in H-2 plasma treatment on SiO2 aerogel film Jung SB, Park HH, Kim H
163 - 168	The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems Adams D, Julies BA, Mayer JW, Alford TL
169 - 173	Surface and interface study of Cu (film)/SiC (substrate) system An Z, Hirai M, Kusaka M, Iwami M
174 - 180	Effect of Al interlayers on two-step epitaxial growth of CoSi2 on Si(100) Nakatsuka O, Onoda H, Okada E, Ikeda H, Sakai A, Zaima S, Yasuda Y
181 - 186	Diffusion barrier properties of nano-crystalline TiZrN films in Cu/Si contact systems Takeyama MB, Itoi T, Aoyagi E, Noya A
187 - 191	Nano-structure of transition-metal (Ti, Ni)/SiC system: photo-emission electron microscopy and soft X-ray fluorescence spectroscopy Hirai M, Labis JP, Ohi A, Kamezawa C, Morikawa Y, Yoshida K, Kusaka M, Iwami M
192 - 197	Properties of GaN and AlGaN Schottky contacts revealed from I-V-T and C-V-T measurements Sawada T, Izumi Y, Kimura N, Suzuki K, Imai K, Kim SW, Suzuki T
198 - 202	Process-induced defects and potential distribution in nearly ideal Au/Si Schottky barriers Maeda K
203 - 207	Interface-controlled Gd2O3/GaAs system for ferroelectric memory application Yang JK, Kim WS, Park HH
208 - 214	Built-in interface in high-kappa gate stacks Hiratani M, Torii K, Shimamoto Y, Saito SI
215 - 222	Band offset energies in zirconium silicate Si alloys Lucovsky G, Rayner B, Zhang Y, Appel G, Whitten J
223 - 227	Diffusion and incorporation of Zr into thermally grown SiO2 on Si(100) Yamaoka M, Murakami H, Miyazaki S
228 - 233	Comparison of thermal and plasma oxidations for HfO2/Si interface Hayashi S, Yamamoto K, Harada Y, Mitsuhashi R, Eriguchi K, Kubota M, Niwa M
234 - 238	Chemical and electronic structures of Lu2O3/Si interfacial transition layer Nohira H, Shiraishi T, Nakamura T, Takahashi K, Takeda M, Ohmi S, Iwai H, Hattori T
239 - 245	Oxygen radical treatment applied to ferroelectric thin films Takahashi I, Sakurai H, Yamada A, Funaiwa K, Hirai K, Urabe S, Goto T, Hirayama M, Teramoto A, Sugawa S, Ohmi T
246 - 251	Reliability of silicon nitride gate dielectrics grown at 400 degrees C formed by microwave-excited high-density plasma Ohshima I, Cheng WT, Ono Y, Higuchi M, Hirayama M, Teramoto A, Sugawa S, Ohmi T
252 - 257	Electronic structure and energy band offsets for ultrathin silicon nitride on Si(100) Miyazaki S, Narasaki M, Suyama A, Yamaoka M, Murakami H
258 - 263	The role of hydrogen migration in negative-bias temperature instability Ushio J, Watanabe K, Kushida-Abdelghafar K, Maruizumi T
264 - 269	New intrinsic pair defects in silicon dioxide interface Kitagawa I, Maruizumi T
270 - 274	Microscopic mechanism of interfacial reaction during Si oxidation Akiyama T, Kageshima H
275 - 282	Pinning-free GaAs MIS structures with Si interface control layers formed on (4 x 6) reconstructed (001) surface Anantathanasarn S, Hasegawa H
283 - 286	Compositional transition layer in SiO2/Si interface observed by high-resolution RBS Kimura K, Nakajima K
287 - 290	Depth profiling of oxynitride film formed on Si(100) by photon energy dependent photoelectron spectroscopy Nishizaki K, Nohira H, Takahashi K, Kamakura N, Takata Y, Shin S, Kobayashi K, Tamura N, Hikazutani K, Hattori T
291 - 295	Interfacial chemistry and structures of ultrathin Si oxynitride films Oshima M, Kimura K, Ono K, Horiba K, Nakamura K, Kumigashira H, Oh JH, Niwa M, Usuda K, Hirashita N
296 - 301	Preparation of hafnium oxide films from oxygen-free Hf[N(C2H5)(2)](4) precursor and their properties Takahashi K, Nakayama M, Yokoyama S, Kimura T, Tokumitsu E, Funakubo H
302 - 306	Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics Ohshima C, Taguchi J, Kashiwagi I, Yamamoto H, Ohmi S, Iwai H
307 - 311	Si/SiO2 interface attack during metal oxide growth under low oxygen pressure Kubo K, Kiyohara A, Shimoyama K, Yamabe K
312 - 317	An orientation ratio and ferroelectric properties of ultra-thin PTO films Nishida K, Sugino T, Osada M, Kakihana M, Katoda T
318 - 322	Effects of the substrate on properties of PTO thin film Nishida K, Matuoka G, Osada M, Kakihana A, Katoda T
323 - 328	Growth mechanism of PTO on MgO at initial stage Nishida K, Shirakata K, Osada M, Kakihana M, Katoda T
329 - 333	Thickness dependent integrity of gate oxide on SOI Tsujiuchi M, Iwamatsu T, Naruoka H, Umeda H, Ipposhi T, Maegawa S, Inoue Y
334 - 339	All-optical circular polarization switching phenomenon observed in photo chemically etched silicon Yamamoto N
340 - 346	Simulation of dislocation accumulation in ULSI cells with STI structure Ohashi T, Sato M, Maruizumi T, Kitagawa I
347 - 350	Improvement of hot-carrier-reliability by deuterium termination of Si/SiO2 interface defects Takahashi H, Yamada-Kaneta H
351 - 355	Characterization of dielectric properties of ultrathin SiO2 film formed on Si substrate Hirose K, Kitahara H, Hattori T
356 - 360	Structural study of SiC(0001)3 x 3 surface by surface X-ray diffraction Aoyama T, Akimoto K, Ichimiya A, Hisada Y, Mukainakano S, Emoto T, Tajiri H, Takahashi T, Sugiyama H, Zhang X, Kawata H
361 - 364	In situ observation of step-terrace structures on MOVPE grown InP(001) by using grazing X-ray scattering Kawamura T, Bhunia S, Watanabe Y, Fujikawa S, Matsui J, Kagoshima Y, Tsusaka Y
365 - 370	SiO2/SiC interface proved by positron annihilation Maekawa A, Kawasuso A, Yoshikawa A, Itoh H
371 - 375	Study of Cu and Co gettering mechanism using radioactive isotope tracers Matsukawa K, Naruoka H, Hattori N, Mashiko Y
376 - 381	Nucleation and growth of nanocrystalline silicon studied by TEM, XPS and ESR Sato K, Izumi T, Iwase M, Show Y, Morisaki H, Yaguchi T, Kamino T
382 - 387	Real-time measurement of rocking curves during MOVPE growth of GaxIn1-xP/GaAs Bhunia S, Kawamura T, Watanabe Y, Fujikawa S, Matsui J, Kagoshima Y, Tsusaka Y, Uchida K, Sugiyama N, Furiya M, Nozaki S, Morisaki H
388 - 394	Real time observation of initial thermal oxidation using O-2 gas on Si(001) surface by means of synchrotron radiation Si-2p photoemission spectroscopy Yoshigoe A, Moritani K, Teraoka Y
395 - 401	Real-time monitoring of oxidation on the Ti(0001) surface by synchrotron radiation photoelectron spectroscopy and RHEED-AES Takakuwa Y, Ishidzuka S, Yoshigoe A, Teraoka Y, Yamauchi Y, Mizuno Y, Tonda H, Homma T
402 - 406	Formation and characteristics of 100-nm scale GaAs quantum wires by selective area MOVPE Takahashi H, Miyoshi Y, Nakajima E, Mohan P, Motohisa J, Fukui T
407 - 412	Shape transition of InAs from two-dimensional islands to three-dimensional dots by annealing Iwasaki S, Yamaguchi K
413 - 418	Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD Asaoka N, Funato H, Suhara M, Okumura T
419 - 423	Precise control of size and density of self-assembled Ge dot on Si(100) by carbon-induced strain-engineering Wakayama Y, Sokolov LV, Zakharov N, Werner R, Gosele U
424 - 430	Si submonolayer and monolayer digital growth operation techniques using Si2H6 as atomically controlled growth nanotechnology Suda Y, Hosoya N, Miki K
431 - 435	Characteristics of ZnO whiskers prepared from organic-zinc Kubota J, Haga K, Kashiwaba Y, Watanabe H, Zhang BP, Segawa Y
436 - 446	Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations Kratzer P, Penev E, Scheffler M
447 - 452	First-principles study for molecular beam epitaxial growth of GaN(0001) Ishii A
453 - 457	Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE Kangawa Y, Ito T, Kumagai Y, Koukitu A
458 - 462	Systematic theoretical investigations of miscibility in Si1-x-yGexCy thin films Ito T, Nakamura K, Kangawa Y, Shiraishi K, Taguchi A, Kageshima H
463 - 470	First-principle theoretical study on the electronic properties of SiO2 models with hydrogenated impurities and charges Doi K, Nakamura K, Tachibana A
471 - 477	Ab initio study of 3C-SiC/M (M = Ti or Al) nano-hetero interfaces Tanaka S, Kohyama M
478 - 482	Dynamics of In atom during InAs/GaAs(001) growth process Ishii A, Fujiwara K, Aisaka T
483 - 489	A field effect transistor using highly nitrogen-doped CVD diamond for power device applications Yokoyama Y, Li XQ, Sheng K, Mihaila A, Traikovic T, Udrea F, Amaratunga GAJ, Okano K
490 - 496	Theoretical study on stable structures and diffusion mechanisms of B in SiO2 Otani M, Shiraishi K, Oshiyama A
497 - 501	Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface Kimoto T, Hirao T, Fujihira K, Kosugi H, Danno K, Matsunami H
502 - 507	Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy Tomida Y, Nitta S, Kamiyama S, Amano H, Akasaki I, Otani S, Kinoshita H, Liu R, Bell A, Ponce FA
508 - 511	Low-temperature growth of AlN on nearly lattice-matched MnO substrates Ito S, Fujioka H, Ohta J, Sasaki A, Liu J, Yoshimoto M, Koinuma H, Oshima M
512 - 518	Laser lift-off of very thin AlGaN film from sapphire using selective decomposition of GaN interlayer Ueda T, Ishida M, Yuri M
519 - 525	Effects of surface processing on 2DEG current transport at AlGaN/GaN interface studied by gateless HFET structure Inagaki T, Hashizume T, Hasegawa H
526 - 531	Composition dependence of InP/GaxIn1-xAsyP1-y/InP interface structures analyzed by X-ray CTR scattering measurements Tabuchi M, Kyouzu H, Takemi M, Takeda Y
532 - 536	Growth mechanism in heavily carbon-doped GaAsxSb1-x grown by MOCVD Oda Y, Watanabe N, Yokoyama H, Kobayashi T
537 - 541	AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp)(3)) Akane T, Jinno S, Yang Y, Kuno T, Hirata T, Isogai Y, Watanabe N, Fujiwara Y, Nakamura A, Takeda Y
542 - 548	Improvement of power performance in planar type AlGaAs/GaAs MESFET by substrate surface oxidation Kagiyama T, Saito Y, Otobe K, Nakajima S
549 - 553	Area-selective regrowth followed by AsH3 surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions Ohno T, Oyama Y, Tezuka K, Suto K, Nishizawa J
554 - 559	Short-period Si/Si1-xGex multiple quantum wells: real-time spectro-ellipsometric characterization during growth by synchrotron-radiation-excited chemical-beam epitaxy Akazawa H
560 - 563	Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy Koizumi A, Fujiwara Y, Inoue K, Yoshikane T, Urakami A, Takeda Y
564 - 568	Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy Fujiwara Y, Nonogaki Y, Oga R, Koizumi A, Takeda Y
569 - 574	Heteroepitaxial growth of InSb films on a Si(001) substrate via AlSb buffer layer Mori M, Akae N, Uotani K, Fujimoto N, Tambo T, Tatsuyama C
575 - 579	Initial stage of 3C-SiC growth on Si(001)-2 x 1 surface using monomethylsilane Narita Y, Inubushi T, Harashima M, Yasui K, Akahane T
580 - 584	Radio frequency power dependence of the characteristics of 3C-SiC on Si grown by triode plasma CVD using dimethylsilane Yasui K, Hashiba M, Akahane T
585 - 589	Mechanism of H-2 pre-annealing on the growth of GaN on sapphire by MOVPE Tsuda M, Watanabe K, Kamiyama S, Amano H, Akasaki I, Liu R, Bell A, Ponce FA
590 - 595	Study of epitaxial SrTiO3 (STO) thin films grown on Si(001)-2 x 1 substrates by molecular beam epitaxy Bhuiyan MNK, Matsuda A, Yasumura T, Tambo T, Tatsuyama C
596 - 602	Improved surface morphology of sulfur-doped homoepitaxial diamond films by plasma CVD method with SF6 Grading-Doping profile Fujii S, Hino S, Kobayashi T
603 - 606	Magnetic and optical properties of novel magnetic semiconductor Cr-doped ZnO and its application to all oxide p-i-n diode Satoh I, Kobayashi T
607 - 613	Growth and annealing effect of ferromagnetic (Ga, Mn)As on Si(100) substrates Uchitomi N, Sato S, Jinbo Y
614 - 619	Growth of beta-FeSi2 on MnSi1.7 layers by reactive deposition epitaxy Kohira M, Souno Y, Matsuyama T, Tatsuoka H, Ohsugi IJ, Nishida IA, Kuwabara H
620 - 624	Formation of CaMgSi at Ca2Si/Mg2Si interface Hosono T, Kuramoto A, Matsuzawa Y, Momose Y, Maeda Y, Matsuyama T, Tatsuoka H, Fukuda Y, Hashimoto S, Kuwabara H
625 - 629	Decay rates of exciton and phonon-assisted recombination in asymmetric GaAs/AlAs type II superlattices Sulaimanov AK, Braginsky LS, Gilinsky AM, Toropov AI, Bakarov AK, Zhuravlev KS