Solid-State Electronics

Solid-State Electronics, Vol.48, No.10-11 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (73 articles)

1691 - 1691	Selected papers from the International semiconductor device research symposium (ISDRS'03) - Foreword Iliadis AA
1693 - 1697	High temperature Hall effect measurements of semi-insulating 4H-SiC substrates Mitchel WC, Mitchell WD, Zvanut ME, Landis G
1699 - 1702	InP heterojunction bipolar transistor with a selectively implanted collector Dong Y, Wei Y, Griffith Z, Urteaga M, Dahlstrom M, Rodwell MJW
1703 - 1708	Reliability challenges of high performance PD SOICMOS with ultra-thin gate dielectrics Zhao E, Zhang J, Salman A, Subba N, Chan J, Marathe A, Beebe S, Taylor K
1709 - 1715	An analytical model of SiC MESFET incorporating trapping and thermal effects Mukherjee SS, Islam SS, Bowman RJ
1717 - 1720	Reliability of SiC MOS devices Singh R, Hefner AR
1721 - 1725	The power of using automatic device optimization, based on iterative device simulations, in design of high-performance devices Bertilsson K, Nilsson HE
1727 - 1732	Double gate (DG)-SOI ratioed logic with symmetric DG load - a novel approach for sub 50 nm low-voltage/low-power circuit design Mitra S, Salman A, Ioannou DP, Tretz C, Ioannou DE
1733 - 1739	Application of heat flow models to SOI current mirrors Yu FX, Cheng MC
1741 - 1746	Impact of device physics on DG and SOI MOSFET linearity Ma W, Kaya S
1747 - 1752	Molecular devices formed by direct monolayer attachment to silicon Richter CA, Hacker CA, Richter LJ, Vogel EM
1753 - 1756	Macroelectronic applications of carbon nanotube networks Novak JP, Lay MD, Perkins FK, Snow ES
1757 - 1762	Compact models for silicon carbide power devices McNutt T, Hefner A, Mantooth A, Berning D, Singh R
1763 - 1766	Analytical model of body factor in short channel bulk MOSFETs for low voltage applications Kumar A, Nagumo T, Tsutsui G, Hiramoto T
1767 - 1770	Impact of asymmetric metal coverage on high performance MOSFET mismatch Fukumoto J, Das T, Paradis K, Burleson J, Moon JE, Mukund PR
1771 - 1775	Scalable 2-bit silicon-oxide-nitride-oxide-silicon (SONOS) memory with physically separated local nitrides under a merged gate Lee YK, Sung SK, Sim JS, Song KW, Lee JD, Park BG, Kang ST, Chung CH, Park D, Kim K
1777 - 1781	MEMS-based embedded sensor virtual components for system-on-a-chip (SoC) Afridi M, Hefner A, Berning D, Ellenwood C, Varma A, Jacob B, Semancik S
1783 - 1790	Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixing Tait GB, Ameen DB
1791 - 1794	Si doped p- and n-type AlxGa1-xAs epilayers for high density lateral-junction LED arrays on (311)A patterned substrate Saravanan S, Dharmarasu N, Vaccaro PO, Ocampo JMZ, Kubota K, Saito N
1795 - 1799	Effects of microwave interference on the operational parameters of n-channel enhancement mode MOSFET devices in CMOS integrated circuits Kim K, Iliadis AA, Granatstein VL
1801 - 1807	Modeling of direct tunneling current through interfacial oxide and high-K gate stacks Zhao YJ, White MH
1809 - 1814	Screening of Si-H bonds during plasma processing Srinivasan P, Vootukuru B, Misra D
1815 - 1818	Proton irradiation damages in CuInSe2 thin film solar cell materials by a piezoelectric photothermal spectroscopy Akaki Y, Ohryoji N, Yoshino K, Kawakita S, Imaizumi M, Niki S, Sakurai K, Ishizuka S, Ohshima T, Ikari T
1819 - 1823	Nanoscale FinFETs for low power applications Rosner W, Landgraf E, Kretz J, Dreeskornfeld L, Schafer H, Stadele M, Schulz T, Hofmann F, Luyken RJ, Specht M, Hartwich J, Pamler W, Risch L
1825 - 1828	Performance of unpassivated AlGaN/GaN/SiC HEMTs after short-term electrical bias stress Bernat J, Wolter M, Javorka P, Fox A, Marso M, Kordos P
1829 - 1832	An improved shift-and-ratio L-eff extraction method for MOS transistors with halo/pocket implants Fathipour M, Fathi E, Afzal B, Khakifirooz A
1833 - 1836	Maskless fabrication of JFETs via focused ion beams De Marco AJ, Melngailis J
1837 - 1842	Novel polysilicon gate engineering with a laser thermal process for sub-40 nm CMOS devices Yamamoto T, Okabe K, Kubo T, Goto K, Morioka H, Wang Y, Lin T, Talwar S, Kase M, Sugii T
1843 - 1847	Accurate treatment of interface roughness in nanoscale DG MOSFETs using non-equilibrium Green's functions Fonseca J, Kaya S
1849 - 1853	Growth parameter dependence of gain compression in AlGaN/GaN HFETs Faraclas EW, Islam SS, Anwar AFM
1855 - 1859	Post-annealing effects on device performance of AlGaN/GaN HFETs Liu DM, Kim H, Lu W
1861 - 1866	A new edge termination technique for SiC power devices Hu ST, Sheng K
1867 - 1872	A comparison of the AIN annealing cap for 4H-SiC annealed in nitrogen versus argon atmosphere Derenge MA, Jones KA, Kirchner KW, Ervin MH, Zheleva TS, Hullavarad S, Vispute RD
1873 - 1876	Impurity and defect centers of n-type 4H-SiC single crystals investigated by a photoluminescence and a piezoelectric photo thermal spectroscopies Sakai K, Fukuyama A, Shigetomi S, Ikari T
1877 - 1881	Temperature dependency of MOSFET device characteristics in 4H-and 6H-silicon carbide (SiC) Hasanuzzaman M, Islam SK, Tolbert LM, Alam MT
1883 - 1890	Modeling C-V characteristics of deep sub-0.1 micron mesoscale MOS devices Gunther NG, Pesic II, Mutlu AA, Rahman M
1891 - 1896	Wideband modeling technique for deep sub-micron MOSFETs Chiou MH, Hsu KYJ
1897 - 1900	On the scaling limits of low-frequency noise in SiGeHBTs Johansen JA, Jin ZR, Cressler JD, Cui Y, Niu GF, Liang QQ, Rieh JS, Freeman G, Ahlgren D, Joseph A
1901 - 1906	Degradation and recovery of SiGeHBTs following radiation and hot-carrier stressing Sheng SR, McAlister SP, McCaffrey JP, Kovacic SJ
1907 - 1910	Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation Sudirgo S, Nandgaonkar RP, Curanovic B, Hebding JL, Saxer RL, Islam SS, Hirschman KD, Rommel SL, Kurinec SK, Thompson PE, Jin N, Berger PR
1911 - 1915	Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications Ackaert J, Lowe A, Boonen S, Yao T, Rayhem J, Desoete B, Prasad J, Thomason M, Van Houdt J, Degraeve R, Haspeslagh L, Hendrickx P
1917 - 1920	A microstructural study of the CdTe/ZnTe film morphology as related to the Si substrate orientation Sarney WL, Brill G
1921 - 1925	Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance Hackbarth T, Herzog H, Hieber KH, Konig U, Mantl S, Hollander B, Lenk S, von Kanel H, Enciso M, Aniel F, Giguerre L
1927 - 1931	Device design for a raised extrinsic base SiGe bipolar technology Haralson E, Malm G, Ostling M
1933 - 1941	Blue electroluminescence from MOS capacitors with Si-implanted SiO2 Matsuda T, Nishihara K, Kawabe M, Iwata H, Iwatsubo S, Ohzone T
1943 - 1946	Scaling rules for SOI MOSFETs operating in the fully inverted mode Hanajiri T, Niizato M, Aoto K, Toyabe T, Nakajima Y, Morikawa T, Sugano T
1947 - 1951	Beta engineering and circuit styles for SEU hardening PD-SOI SRAM cells Ioannou DP, Ioannou DE
1953 - 1957	A lateral structure for low-cost fabrication of COOLMOS (TM) Shahrjerdi D, Fathipour M, Hekmatshoar B, Khakifirooz A
1959 - 1963	Design of MEMS-tunable novel monolithic optical filters in InP with horizontal bragg mirrors Datta M, Pruessner MW, Kelly DP, Ghodssi R
1965 - 1974	Enhanced functionality in GaN and SiC devices by using novel processing Pearton SJ, Abernathy CR, Gila BP, Ren F, Zavada JM, Park YD
1975 - 1979	Drift dominated InP/GaP photodiodes Sun YN, Yulius A, Li GH, Woodall JM
1981 - 1986	AC performance of nanoelectronics: towards a ballistic THz nanotube transistor Burke PJ
1987 - 1992	Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode Zhu SY, Yu HY, Chen JD, Whang SJ, Chen JH, Shen C, Zhu CX, Lee SJ, Li MF, Chan DSH, Yoo WJ, Du AY, Tung CH, Singh J, Chin A, Kwong DL
1993 - 1999	Transit times of SiGe : C HBTs using nonselective base epitaxy Zerounian N, Rodriguez M, Enciso M, Aniel F, Chevalier P, Martinet B, Chantre A
2001 - 2006	Self-heating in multi-emitter SiGeHBTs McAlister SP, McKinnon WR, Kovacic SJ, Lafontaine H
2007 - 2011	Noise in metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTs Webster RT, Anwar AFM
2013 - 2017	Ballistic transport at GHz frequencies in ungated HEMT structures Kang SM, Burke PJ, Pfeiffer LN, West KW
2019 - 2024	Polyaniline/single-walled carbon nanotube composite electronic devices Ramamurthy PC, Malshe AM, Harrell WR, Gregory RV, McGuire K, Rao AM
2025 - 2030	Study of ZnO nanocluster formation within styrene-acrylic acid and styrene-methacrylic acid diblock copolymers on Si andSiO(2) surfaces Ali HA, Iliadis AA, Lee U
2031 - 2034	A novel SONOS nonvolatile flash memory device using substrate hot-hole injection for write and gate tunneling for erase Wang Y, Zhao Y, Khan BM, Doherty CL, Krayer JD, White MH
2035 - 2039	Characterizing damage to ONO dielectrics induced during programming SONOS/NROM (TM) non-volatile semiconductor memory (NVSM) devices Wrazien SJ, Wang Y, Khan BM, White MH
2041 - 2045	Tunable CW-THz system with a log-periodic photoconductive emitter Mendis R, Sydlo C, Sigmund J, Feiginov M, Meissner P, Hartnagel HL
2047 - 2050	A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs Suligoj T, Liu H, Sin JKO, Tsui K, Chu RM, Chen KJ, Biljanovic P, Wang KL
2051 - 2053	A system-level analysis of Schottky diodes for incoherent THz imaging arrays Brown ER
2055 - 2059	Modeling of nonvolatile floating gate quantum dot memory Hasaneen ES, Heller E, Bansal R, Huang W, Jain F
2061 - 2066	Characterization of a MEMS BioChip for planar patch-clamp recording Pandey S, Mehrotra R, Wykosky S, White MH
2067 - 2070	Gallium-arsenide deep-level tunnel diode with record negative conductance and record peak current density Pan JL, McManis JE, Grober L, Woodall JM
2071 - 2077	Interfacial oxide determination and chemical/electrical structures of WO2/SiOx/Si gate dielectrics Xie L, Zhao Y, White MH
2079 - 2084	Low-frequency noise characteristics of AlSb/InAsSb HEMTs Kruppa W, Boos JB, Bennett BR, Tinkham BP
2085 - 2088	Dependence of film morphology on deposition rate in ITO/TPD/Alq(3)/Al organic luminescent diodes Mu HC, Shen H, Klotzkin D
2089 - 2093	Design and fabrication of Schottky diode, on-chip RF power detector Jeon W, Firestone TM, Rodgers JC, Melngailis J
2095 - 2098	Electrical parameters in highly doped strained n-Si1-xGex epilayers grown on Si substrates Tsamakis D, Sargentis C, Kuznetsov AY, Lampakis D
2099 - 2102	A modeling of the optical properties of the zinc oxide-zinc magnesium oxide double barrier system Krokidis G, Xanthakis JP, Iliadis AA