Thin Solid Films

Thin Solid Films, Vol.294, No.1-2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (85 articles)

1 - 2	Papers Presented at the European-Materials-Research-Society 1996-Spring-Meeting, Symposium-D - Group-IV Heterostructures, Physics and Devices (Si, Ge, C, Alpha-Sn), Strasbourg, France, June 4-7, 1996 - Preface Lourtioz JM
3 - 10	Line, Point and Surface Defect Morphology of Graded, Relaxed Gesi Alloys on Si Substrates Fitzgerald EA, Samavedam SB
11 - 14	Single-Wafer Si and SiGe Processes for Advanced ULSI Technologies Bodnar S, Morin C, Regolini JL
15 - 17	Atomic Layer Doping of SiGe by Low-Pressure (Rapid Thermal) Chemical-Vapor-Deposition Tillack B, Kruger D, Gaworzewski P, Ritter G
18 - 21	Real-Time Control of Layer Thickness in LPCVD Si/Si.Ge-88.(12) HBT Structures Hope DA, Pickering C, Carline RT, Leong WY, Robbins DJ
22 - 26	Growth Mechanisms of SiGe on (111)Si and (100)Si Substrates Gallas B, Berbezier I, Ronda A, Derrien J
27 - 32	Defect-Free Strain Relaxation in Locally MBE-Grown SiGe Heterostructures Rupp T, Kaesen F, Hansch W, Hammerl E, Gravesteijn DJ, Schorer R, Silveira E, Abstreiter G, Eisele I
33 - 36	Time-Resolved Dislocation-Related Luminescence in Strain-Relaxed SiGe/Si Fukatsu S, Mera Y, Inoue M, Maeda K
37 - 42	Combined Characterization of Group-IV Heterostructures and Materials by Spectroscopic Ellipsometry and Grazing X-Ray Reflectance Boher P, Stehle JL, Hennet L
43 - 46	Relaxed Epitaxial Si(1-X)Ge-X Grown by MBE Monakhov EV, Shiryaev SY, Larsen AN, Hartung J, Davies G
47 - 49	Strain Relaxation and Thermal-Stability of the 3C-SiC(001)/Si(001) Interface - A Molecular-Dynamics Study Chirita V, Hultman L, Wallenberg LR
50 - 53	Effects of Substrate Bias and Rapid Thermal-Processing on the Luminescence of Si/SiGe Multiple-Quantum Wells Grown by MBE Hartmann R, Grutzmacher D, Muller E, Gennser U, Dommann A
54 - 58	Quantification of Germanium and Boron in Heterostructures Si/Si1-xGex/Si by SIMS Prudon G, Gautier B, Dupuy JC, Dubois C, Bonneau M, Delmas K, Vallard JP, Bremond G, Brenier R
59 - 63	UHV-CVD Heteroepitaxial Growth of Si1-xGex Alloys on Si(100) Using Silane and Germane Vinh LT, Aubryfortuna V, Zheng Y, Bouchier D, Guedj C, Hincelin G
64 - 68	Structural Disorder in SiGe Films Grown Epitaxially on Si by Ion-Beam Sputter-Deposition Parnis D, Zolotoyabko E, Kaplan WD, Eizenberg M, Mosleh N, Meyer F, Schwebel C
69 - 71	Homoepitaxy of Silicon at Low-Temperature on Clean and Ga-Covered Substrates Gallas B, Berbezier I, Derrien J
72 - 75	Cold-Walled UHV/CVD Batch Reactor for the Growth of Si1-xGex Layers Thomsen EV, Christensen C, Andersen CR, Pedersen EV, Eginton PN, Hansen O, Petersen JW
76 - 79	Growth of Single-Crystal Si, Ge and SiGe Layers Using Plasma-Assisted CVD Thwaites MJ, Reehal HS
80 - 83	HRTEM Study of Si1-xGex Werckmann J, Chelly R, Ulhaqbouillet C, Romeo M, Ghica C
84 - 87	Growth of Epitaxial SiGe Nanostructures at Low-Temperature on Si(100) Using Hot-Wire Assisted Gas-Source Molecular-Beam Epitaxy Chelly R, Werckmann J, Angot T, Louis P, Bolmont D, Koulmann JJ
88 - 92	Surface-Morphology and Reconstructions of Ultra-Thin Si Films Grown by Solid-Phrase Epitaxy Zhang Z, Kulakov MA, Bullemer B
93 - 97	Ternary Sigec Alloys - Growth and Properties of a New Semiconducting Material Osten HJ, Kim M, Lippert G, Zaumseil P
98 - 104	Pseudomorphic Si1-Ycy and Si1-X-Ygexcy Alloy Layers on Si Eberl K, Brunner K, Winter W
105 - 111	Improved Growth-Morphology of Si-Ge-C Heterostructures Through the Use of Sb Surfactant-Assisted Molecular-Beam Epitaxy Croke ET, Hunter AT, Pettersson PO, Ahn CC, Mcgill TC
112 - 117	Optical and Electrical-Properties of Si(1-X-Y)G(X)G(Y) Thin-Films and Devices Stamour A, Lanzerotti LD, Chang CL, Sturm JC
118 - 121	Local Strains in Si1-X-Ygexcy Alloys as Deduced from Vibrational Frequencies Finkman E, Rucker H, Meyer F, Prawer SD, Bouchier D, Boulmer J, Bodnar S, Regolini JL
122 - 124	Near-Band-Edge Photoluminescence from Pseudomorphic Tensially Strained Si0.985C0.015 Alloy Khan AS, Berger PR, Guarin FJ, Iyer SS
125 - 128	Rtcvd Growth and Characterization of Sigec Multiquantum Wells Warren P, Dutoit M, Boucaud P, Lourtioz JM, Julien FH
129 - 132	Carbon and Germanium Distributions in Si1-X-Ygexcy Layers Epitaxially Grown on Si(001) by Rtcvd Guedj C, Portier X, Hairie A, Bouchier D, Calvarin G, Piriou B
133 - 136	Infrared-Spectroscopy of Strained Si1-Ycy Alloys (0-Less-Than-or-Equal-to-Y-Less-Than-or-Equal-to-0.015) Grown on Silicon Pressel K, Fischer GG, Zaumseil P, Kim M, Osten HJ
137 - 140	Incorporation of Substitutional Carbon in Si and SiGe by Laser Processing in Methane and Propylene Boulmer J, Guedj C, Debarre D
141 - 144	Fermi-Level Pinning in Schottky Diodes on IV-IV-Semiconductors - Effect of Ge-Incorporation and C-Incorporation Mamor M, Perrossier JL, Aubryfortuna V, Meyer F, Bouchier D, Bodnar S, Regolini JL
145 - 148	Strain Compensation in Si1-X-Ygexcy Layers Prepared by Ion-Implantation and Excimer-Laser Annealing Grob A, Grob JJ, Muller D, Prevot B, Stuck R
149 - 152	Comparison of Si1-Ycy Films Produced by Solid-Phase Epitaxy and Rapid Thermal Chemical-Vapor-Deposition Ray SK, Mcneill DW, Gay DL, Maiti CK, Armstrong GA, Armstrong BM, Gamble HS
153 - 156	New Ge Substrate Cleaning Method for Si1-X-Ygexcy MOMBE Growth Akane T, Okumura H, Tanaka J, Matsumoto S
157 - 159	Fabrication of a Nanosize Si-Tip Coated with a Thin Diamond-Like Carbon-Film Jung MY, Kim DW, Choi SS, Kim YS, Kuk Y, Park KC, Jang J
160 - 165	Fully Pseudomorphic Si/SiGe/Si Heterostructures for P-Channel Field-Effect Devices Whall TE
166 - 172	Novel Microscopic Properties and the Electronic-Structure of SiGe Heterostructures and Related Systems Shaw MJ, Briddon PR, Jaros M
173 - 178	Spectroscopy of Intersubband Transitions in Si-Si1-xGex Quantum-Wells Boucaud P, Wu L, Julien FH, Lourtioz JM, Sagnes I, Campidelli Y, Prazeres R, Ortega JM
179 - 181	Low-Field Magnetoresistance in Si/SiGe Quantum-Wells Prinz A, Brunthaler G, Sawicki M, Bauer G, Ismail K, Meyerson BS
182 - 185	Thermoelectric-Power of the Si/Si0.8Ge0.2 2-Dimensional Hole Gas Mironov OA, Gerleman IG, Phillips PJ, Parker EH, Tsaousidou M, Butcher PN, Whall TE
186 - 189	Optical-Spectra and Recombination in Si-Ge Heterostructures Corbin E, Williams C, Hagon JP, Jaros M, Presting H
190 - 193	Local Electric-Field Effects in a SiGe Quantum-Well Investigated by Photoluminescence Nilsson S, Penner U, Schmalz K, Yassievich IN, Chang CY, Tsai WC
194 - 197	Recombination Mechanisms via Deep Levels in Rtcvd Si/Si0.85Ge0.15/Si Double Heterostructures Gamezcuatzin H, Debarros O, Bremond G, Warren P, Dutartre D
198 - 200	Si1-xGex/Si Valence-Band Offset Determination Using Current-Voltage Characteristics Chretien O, Apetz R, Souifi A, Vescan L
201 - 203	Room-Temperature Electroluminescence from Dislocations in Silicon Sveinbjornsson EO, Weber J
204 - 207	Local-Symmetry Effect on Light Emissivity from SiGe Quantum-Wells Miyao M, Nakagawa K, Kimura Y, Hirao M
208 - 210	Electrophysical Studies of 2D-Hole Spectral Characteristics and Peculiarities of Scattering Mechanisms in Ge Layers of Ge-Ge1-Xsix Heterostructures Orlov LK, Potapov AV, Rubtsova RA, Arapov Y, Gorodilov N, Shelushinina N, Yang FH, Leotin J, Goiran M
211 - 213	Thermal Emission of Holes from Confined Levels in Strained SiGe Channel P-MOSFETs Gamezcuatzin H, Marchand JJ, Bremond G, Garchery L, Campidelli Y, Berenguer M
214 - 216	Electrical-Properties of Silicon-Nitride Films Grown on a SiGe Layer by Distributed Electron-Cyclotron-Resonance Plasma-Enhanced Chemical-Vapor-Deposition Dufourgergam E, Meyer F, Delmotte F, Hugon MC, Agius B, Warren P, Dutartre D
217 - 219	Titanium Metallization of Si/Ge Alloys and Superlattices Freiman W, Beserman R, Dettmer K
220 - 222	Erbium-Silicon Light-Emitting-Diodes Grown by Molecular-Beam Epitaxy - Optical-Properties Stimmer J, Reittinger A, Neufeld E, Abstreiter G, Holzbrecher H, Breuer U, Buchal C
223 - 226	Erbium Doping of Si via Ion-Beam-Induced Epitaxial Crystallization - Another Route to Room-Temperature Photoluminescence Clerc C, Bernas H, Chaumont J, Boucaud P, Julien F, Lourtioz JM
227 - 230	Highly Oriented Si Nanoparticles in SiO2 Created by Si Molecular-Beam Epitaxy with Oxygen Implantation Ishikawa Y, Shibata N, Fukatsu S
231 - 234	DC Electric-Field-Induced 2nd-Harmonic Generation Spectroscopy of the Si(001)-SiO2 Interface - Separation of the Bulk and Surface Nonlinear Contributions Aktsipetrov OA, Fedyanin AA, Melnikov AV, Dadap JI, Hu XF, Anderson MH, Downer MC, Lowell JK
235 - 237	DC Electric-Field-Induced 2nd-Harmonic Generation in Si-SiO2 Multiple-Quantum Wells Aktsipetrov OA, Fedyanin AA
238 - 241	Effect of Annealing and H-2 Passivation on the Photoluminescence of Si Nanocrystals in SiO2 Neufeld E, Wang S, Apetz R, Buchal C, Carius R, White CW, Thomas DK
242 - 245	SiGe/Sigeo2 Interface Defects Lebib S, Schoisswohl M, Cantin JL, Vonbardeleben HJ
246 - 249	Recent Advances with SiGe Heterojunction Bipolar-Transistors Gruhle A, Schuppen A
250 - 253	Integration of SiGe Heterojunction Bipolar-Transistors in a 200 mm Industrial BiCMOS Technology Deberranger E, Bodnar S, Chantre A, Kirtsch J, Monroy A, Granier A, Laurens M, Regolini JL, Mouis M
254 - 258	Proposal for a New Process Flow for the Fabrication of Silicon-Based Complementary MOD-MOSFETs Without Ion-Implantation Augusto CJ, Demeyer K
259 - 262	Study of Uniform and Graded SiGe Channel Heterojunction P-MOSFETs Using Monte-Carlo Simulation Dollfus P, Galdin S, Arbey ME, Hesto P
263 - 266	Characterization of an N-Type Si/SiGe Modulation-Doped Field-Effect Transistor Kuznetsov VI, Werner K, Radelaar S, Metselaar JW
267 - 270	Vertical Si P-MOS Transistor Selectively Grown by Low-Pressure Chemical-Vapor-Deposition Loo R, Vescan L, Behammer D, Moers J, Grabolla T, Langen W, Klaes D, Zastrow U, Kordos P
271 - 273	Characterization of Si/SiGe Heterojunction Bipolar-Transistors by Deep-Level Transient Spectroscopy Debarros O, Souifi A, Letron B, Vincent G, Bremond G
274 - 277	Use of Narrow Collector Layers in Si and Si1-xGex Bipolar-Transistors Leong WY, Churchill AC, Robbins DJ, Lambert A
278 - 280	New-Type of Schottky Barriers Using NiTi Shape-Memory Alloy-Films Bendahan M, Seguin JL, Lollman D, Carchano H
281 - 283	Non-One-Dimensional Effects in Tunnel MOS Devices Belov SV, Vexler MI, Grekhov IV, Shulekin AF
284 - 290	Strained SiGe/Si Quantum-Well Dots and Wires Selectively Grown by LPCVD and Their Optical-Properties Vescan L
291 - 295	Growth of Self-Assembled Homogeneous SiGe-Dots on Si(100) Schittenhelm P, Abstreiter G, Darhuber A, Bauer G, Werner P, Kosogov A
296 - 299	X-Ray-Diffraction and Reflection from Self-Assembled Ge Dots Darhuber AA, Stangl J, Bauer G, Schittenhelm P, Abstreiter G
300 - 303	Lattice Distortion in Dry-Etched Si/SiGe Quantum-Dot Array Studied by 2D Reciprocal Space Mapping Using Synchrotron X-Ray-Diffraction Ni WX, Birch J, Tang YS, Joelsson KB, Sotomayortorres C, Kvick A, Hansson GV
304 - 307	Controlling the Strain and Light-Emission from Si-Si1-xGex Quantum Dots Tang YS, Hicks SE, Ni WX, Torres CM, Hansson GV, Wilkinson CD
308 - 310	Self-Assembled Growth of Sn on Ge(001) Dondl W, Schittenhelm P, Abstreiter G
311 - 314	Dislocation Patterning - A New Tool for Spatial Manipulation of Ge Islands Shiryaev SY, Pedersen EV, Jensen F, Petersen JW, Hansen JL, Larsen AN
315 - 317	Collective Excitations of Electron Disks in Laterally Patterned Si/SiGe Modulation-Doped Heterojunctions Zanier S, Guldner Y, Berroir JM, Vieren JP, Faini G, Cambril E, Garchery L, Campidelli Y, Sagnes I
318 - 324	Dynamical Behavior in a Shallow Quantum Confinement System Fukatsu S
325 - 329	Prospects for Novel Si-Based Optoelectronic Devices - Unipolar and P-I-P-I Lasers Soref RA
330 - 335	Ir Studies of P-Type Si/SiGe Quantum-Wells - Intersubband Absorption, Ir Detectors, and 2nd-Harmonic Generation Helm M, Kruck P, Fromherz T, Weichselbaum A, Seto M, Bauer G, Moussa Z, Boucaud P, Julien FH, Lourtioz JM, Nutzel JF, Abstreiter G
336 - 339	Anomalous Photoluminescence of Pure-Ge/Si Type-II Coupled Quantum-Wells (II-Cqws) Sunamura H, Usami N, Shiraki Y, Fukatsu S
340 - 342	Ir Absorption and Quantum Efficiency of Highly P-Doped SiGe Layers Uschmann J, Presting H, Kibbel H, Thonke K, Sauer R, Cabanski W, Jaros M
343 - 346	Gesi Infrared Detectors Strong R, Greve DW, Misra R, Weeks M, Pellegrini P
347 - 350	Lateral Photodetector Devices on Si/SiGe Heterostructures Engel C, Baumgartner P, Holzmann M, Nutzel JF, Abstreiter G
351 - 353	Vertical MSM Photodiodes in Silicon-Based on Epitaxial Si/CoSi2/Si Ruders F, Kim J, Hacke M, Mesters S, Buchal C, Mantl S
354 - 356	Infrared-Sensitive SiGe-Si Heterojunction Internal Photoemission Detectors Produced by Rapid Thermal Chemical-Vapor-Deposition Banisch R, Tillack B, Pressel K, Barth R, Erzgraber H