Journal of Crystal Growth

Journal of Crystal Growth, Vol.225, No.2-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (86 articles)

97 - 109	Engineering analysis of microdefect formation during silicon crystal growth Brown RA, Wang ZH, Mori T
XI - XI	Proceedings of the Twelfth American Conference on Crystal Growth and Epitaxy Vail, Colorado, USA, 13-18 August 2000 - Preface Matthiesen DH
110 - 113	ZnO Schottky ultraviolet photodetectors Liang S, Sheng H, Liu Y, Huo Z, Lu Y, Shen H
114 - 117	Semiconductor crystal optimization of gamma detection Lachish U
118 - 123	Thick films of X-ray polycrystalline mercuric iodide detectors Schieber M, Hermon H, Zuck A, Vilensky A, Melekhov L, Shatunovsky R, Meerson E, Saado Y, Lukach M, Pinkhasy E, Ready SE, Street RA
124 - 128	Performance of TAS crystal for AOTF imaging Singh NB, Suhre D, Gupta N, Rosch W, Gottlieb M
129 - 133	Characterization of thallium bromide crystals for radiation detector applications Hitomi K, Matsumoto M, Muroi O, Shoji T, Hiratate Y
134 - 140	Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization Davis RF, Gehrke T, Linthicum KJ, Zheleva TS, Preble EA, Rajagopal P, Zorman CA, Mehregany M
141 - 144	Thermodynamics and nucleation kinetics of AlxGa1-xN/GaN and InxGa1-xN/GaN heterostructures Varadarajan E, Dhanasekaran R, Ramasamy P
145 - 149	Effect of diluted ammonia flow rate on undoped GaN epitaxial films grown by MOCVD Juang FS, Chu TK
150 - 154	Growth of high quality GaN layers with AlN buffer on Si(111) substrates Chen P, Zhang R, Zhao ZM, Xi DJ, Shen B, Chen ZZ, Zhou YG, Xie SY, Lu WF, Zheng YD
155 - 161	High-temperature solution growth of intermetallic single crystals and quasicrystals Canfield PC, Fisher IR
162 - 167	Growth of single crystals (Ca,Sr)(10)Cu17O29 by "melted band" method from Bi-containing fluxes and formation of subsidiary phases Maltsev V, Leonyuk L, Babonas GJ, Reza A, Dapkus L
168 - 172	Growth of phthalocyanine doped anthracene crystal using a three-zone furnace by vacuum sublimation method Selvaraj SL, Xavier FP
173 - 177	Preparation of (001)-oriented PZT thin films on silicon wafers using pulsed laser deposition Zhao J, Lu L, Thompson CV, Lu YF, Song WD
178 - 182	Surface engineering along the close-packed direction of SrTiO3 Doan TD, Giocondi JL, Rohrer GS, Salvador PA
183 - 189	Thermodynamic stability and kinetics of Y-Ba-Cu-O film growth at high rates in atomic and molecular oxygen Jo W, Peng LSJ, Wang W, Ohnishi T, Marshall AF, Hammond RH, Beasley MR, Peterson EJ
190 - 196	Substrate preparations in epitaxial ZnO film growth Zhu S, Su CH, Lehoczky SL, Harris MT, Callahan MJ, McCarty P, George MA
197 - 201	Control of morphology and orientation of ZnO thin films grown on SiO2/Si substrates Muthukumar S, Gorla CR, Emanetoglu NW, Liang S, Lu Y
202 - 207	Study of defects and interfaces in epitaxial ZnO films on (1 1 (2)over-bar 0) Al2O3 grown by electron cyclotron resonance-assisted molecular beam epitaxy Lim SH, Shindo D, Kang HB, Nakamura K
208 - 213	Structural characterization of epitaxial ZnO films grown on (0001) Al2O3 by electron cyclotron resonance-assisted molecular beam epitaxy Lim SH, Shindo D, Kang HB, Nakamura K
214 - 220	High temperature X-ray diffraction study of LiGaO2 Rawn CJ, Chaudhuri J
221 - 224	Dependence of temperature gradient on growth rate in CZ silicon Natsume A, Inoue N, Tanahashi K, Mori A
225 - 230	Improved phosphorus injection synthesis for bulk InP Higgins WM, Iseler GW, Bliss DF, Bryant G, Tassev V, Jafri I, Ware RM, Carlson DJ
231 - 235	Comparison of inductively coupled plasma-mass spectrometry, neutron activation analysis, and Hall effect techniques using antimony doped germanium Keefer LA, Matthiesen DH
236 - 243	Solution growth of thick III-V antimonide alloy epilayers (InAsSb, InGaSb, InGaAsSb, AlGaAsSb, and InAsSbP) for "virtual substrates" Mauk MG, Tata AN, Cox JA
244 - 248	Hydrogen neutralization effect in bulk n-type LEC InP materials Sun NF, Wu XW, Wu X, Zhao YW, Cao LX, Zhao Q, Guo WL, Zhang J, Bi KY, Sun TN
249 - 256	Preparation conditions of chromium doped ZnSe and their infrared luminescence properties Burger A, Chattopadhyay K, Ndap JO, Ma X, Morgan SH, Rablau CI, Su CH, Feth S, Page RH, Schaffers KI, Payne SA
257 - 263	Effect of pulling rates on the quality of YIG single crystal fibers Hu CC, Chen JC, Huang CH
264 - 267	Oscillatory growth of directionally solidified ammonium chloride dendrites Gudgel KA, Jackson KA
268 - 273	Quasi-thermodynamic model of SiGe epitaxial growth Segal AS, Karpov SY, Sid'ko AP, Makarov YN
274 - 281	Numerical computation of sapphire crystal growth using heat exchanger method Lu CW, Chen JC
282 - 288	Phase-field model of crystal grains Lobkovsky AE, Warren JA
289 - 293	Phase-field approach to crystal growth in the presence of strain Kassner K, Misbah C, Muller J, Kappey J, Kohlert P
294 - 298	Modeling of point defect behavior by the stress due to impurity doping in growing silicon Tanahashi K, Harada H, Koukitsu A, Inoue N
299 - 306	Modeling of transport processes and kinetics of silicon carbide bulk growth Chen QS, Zhang H, Ma RH, Prasad V, Balkas CM, Yushin NK
307 - 311	Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth Bogdanov MV, Galyukov AO, Karpov SY, Kulik AV, Kochuguev SK, Ofengeim DK, Tsiryulnikov AV, Ramm MS, Zhmakin AI, Makarov YN
312 - 316	Impact of source material on silicon carbide vapor transport growth process Wellmann PJ, Hofmann D, Kadinski L, Selder M, Straubinger TL, Winnacker A
317 - 321	Growth related distribution of secondary phase inclusions in 6H-SiC single crystals Rost HJ, Dolle J, Doerschel J, Siche D, Schulz D, Wollweber J
322 - 329	Numerical computation of sapphire crystal growth using heat exchanger method Lu CW, Chen JC
330 - 334	Enhanced bulk polysilicon production using silicon tubes Jafri I, Chandra M, Zhang H, Prasad V, Reddy C, Amato-Wierda C, Landry M, Ciszek T
335 - 339	High-quality and low-temperature epitaxial Si films deposited at very high deposition rate Bergmann RB, Oberbeck L, Wagner TA
340 - 347	Crystalline silicon thin-film (CSiTF) solar cells on SSP and on ceramic substrates Eyer A, Haas F, Kieliba T, Osswald D, Reber S, Zimmermann W, Warta W
348 - 353	Electro-epitaxial lateral overgrowth of silicon from liquid-metal solutions Mauk MG, Curran JP
354 - 358	Sulphur-terminated silicon surfaces for the epitaxial growth of chalcopyrite semiconductors Metzner H, Hahn T
359 - 365	Selectively-grown InGaP/GaAs on silicon heterostructures for application to photovoltaic-photoelectrolysis cells Mauk MG, Tata AN, Feyock BW
366 - 371	Epitaxial growth of (001)-oriented and (116)-oriented SrBi2Ta2O9 thin films by chemical solution deposition method Kim JH, Ha TJ, Cheon CI, Lange FF
372 - 376	Epitaxial growth of BGaAs and BGaInAs by MOCVD Geisz JF, Friedman DJ, Kurtz S, Olson JM, Swartzlander AB, Reedy RC, Norman AG
377 - 383	Evolution of surface structure and phase separation in GaInAsSb Wang CA, Calawa DR, Vineis CJ
384 - 390	The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition Biefeld RM, Cederberg JG, Peake GM, Kurtz SR
391 - 396	Enabling terabit systems through MOVPE Campbell KT, Joyner CH, Ebert CW, Robertson A, Wilt DP, Zilko JL
397 - 404	Metalorganic chemical vapor deposition of AlGaAs and InGaP heterojunction bipolar transistors Pan N, Welser RE, Lutz CR, DeLuca PM, Han B, Hong K
405 - 409	Phase transitions of III-V compound semiconductor surfaces in the MOVPE environment Fu Q, Begarney MJ, Li CH, Law DC, Hicks RF
410 - 414	A scanning tunneling microscopy study of As/Ge(mnn) and P/Ge(mnn) surfaces McMahon WE, Olson JM
415 - 419	MOVPE growth of highly-strained piezoelectric InGaAs/GaAs quantum wells on [111]A-oriented substrates Kim J, Cho S, Sanz-Hervas A, Majerfeld A, Kim BW
420 - 425	In-situ reflectance monitoring of GaSb substrate oxide desorption Vineis CJ, Wang CA, Jensen KF
426 - 430	MOVPE of GaSb, (AlGa)Sb and (AlGa)(AsSb) in a multiwafer planetary reactor Agert C, Lanyi P, Bett AW
431 - 434	The effect of diffusion on formation of self-assembled CdSe quantum dots Yang Y, Shen DZ, Zhang JY, Fan XW, Zhen ZH, Zhao XW, Zhao DX, Liu YN
435 - 439	Optical absorption and electron paramagnetic resonance of Fe ions in KDP crystals Garces NY, Stevens KT, Halliburton LE, Yan M, Zaitseva NP, DeYoreo JJ
440 - 444	Defect segregation in CdGeAs2 Schunemann PG, Setzler SD, Pollak TM, Ptak AJ, Myers TH
445 - 448	Material and laser characterizations of intermediate compositions of Ce : LiSrxCa1-xAlF6 Castillo VK, Quarles GJ, Chang RSF
449 - 453	Progress in the growth of Yb : S-FAP laser crystals Schaffers KI, Tassano JB, Waide PA, Payne SA, Morris RC
454 - 457	Growth conditions and composition of terbium aluminum garnet single crystals grown by the micro pulling down technique Ganschow S, Klimm D, Epelbaum BM, Yoshikawa A, Doerschel J, Fukuda T
458 - 464	Influence of [K]/[Li] and [Li]/[Nb] ratios in melts on the TSSG growth and SHG characteristics of potassium lithium niobate crystals Xu XW, Chong TC, Zhang GY, Kumagai H
465 - 469	Bulk growth of high quality nonlinear optical crystals of L-arginine tetrafluoroborate (L-AFB) Owens C, Bhat K, Wang WS, Tan A, Aggarwal MD, Penn BG, Frazier DO
470 - 473	Growth of vanillin crystals for second harmonic generation (SHG) applications in the near-IR wavelength region Singh OP, Singh YP, Singh N, Singh NB
474 - 478	Crystal growth and hydration effects in morpholinium 4-hydroxybenzoate (M4HB) Bahra GS, Chaloner PA, Dutta LM, Healy W, Hitchcock PB
479 - 483	Growth and spectra characterization of Ce and Eu doped SBN crystals Li MH, Chong TC, Xu XW, Kumagai H
484 - 488	Nb : BST: Crystal growth and ferroelectric properties Varatharajan R, Madeswaran S, Jayavel R
489 - 494	Blue SHG characteristics and homogeneity of the TSSG grown potassium lithium niobate (KLN) crystal with high Li2O content Chong TC, Xu XW, Zhang GY, Kumagai H
495 - 500	Cracking mechanism of the potassium lithium niobate crystal related to its internal structure Zhang GY, Chong TC, Xu XW, Kumagai H
501 - 504	New wide-band nonlinear optics CsGeCl3 crystal Gu QT, Fang CS, Shi W, Wu XW, Pan QW
505 - 511	Preparation and thermophysical properties of AgGaTe2 crystals Burger A, Ndap JO, Cui Y, Roy U, Morgan S, Chattopadhyay K, Ma X, Faris K, Thibaud S, Miles R, Mateen H, Goldstein JT, Rawn CJ
512 - 515	Thermal conductivity measurement in lead bromide Singh NB, Coriell SR, Duval WMB, Mani SS, Green K, Glicksman ME
516 - 521	Effect of void location on segregation patterns in microgravity solidification Kassemi M, Barsi S, Kaforey M, Matthiesen D
522 - 527	Gravity-related transport process in off-axis sputtering deposition Zhu S, Su CH, Carpenter P, Lehoczky S
528 - 533	GaAs-on-silicon conformal vapor-phase epitaxy using reversible transport and selective etching reactions with water vapour Mauk MG, Feyock BW, Cotter JE
534 - 539	Epitaxially grown Fe/Ag ultrathin films on GaAs and their application to wideband microwave notch filter Wu W, Lee CC, Tsai CS, Su J, So W, Yoo HJ, Chuang R, Hopster HJ
540 - 543	Effect of H-2 addition on characteristics of TiN films deposited by APCVD Huang HH, Hon MH
544 - 549	As-soak control of the InAs-on-GaSb interface Kaspi R, Steinshnider J, Weimer M, Moeller C, Ongstad A
550 - 555	Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy Chang CA, Wu CZ, Wang PY, Guo XJ, Wu YT, Liang CY, Hwang FC, Jiang WC, Lay FJ, Sung LW, Lin HH
556 - 560	Response surface modeling of the composition of AlAsySb1-y alloys grown by molecular beam epitaxy Gopaladasu P, Cecchi JL, Malloy KJ, Kaspi R
561 - 565	200 mm GaAs crystal growth by the temperature gradient controlled LEC method Seidl A, Eichler S, Flade T, Jurisch M, Kohler A, Kretzer U, Weinert B
566 - 571	Shaped crystal growth of 50 cm diameter silicon thin-walled cylinders by edge-defined film-fed growth (EFG) Garcia D, Ouellette M, Mackintosh B, Kalejs JP
572 - 579	Growth of the world's largest sapphire crystals Khattak CP, Schmid F
580 - 585	Multiple batch recharging for industrial CZ silicon growth Fickett B, Mihalik G