Journal of Crystal Growth

Journal of Crystal Growth, Vol.301 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (237 articles)

1 - 1	14th International Conference on Molecular Beam Epitaxy (MBE-XIV) 3-8 September 2006 - Waseda University, Tokyo, Japan Yoshino J, Akinaga H, Asahi H
4 - 9	Controlling electronic properties of epitaxial nanocomposites of dissimilar materials Hanson MP, Bank SR, Zide JMO, Zimmerman JD, Gossard AC
10 - 15	Recent progress in nanostructure fabrication using MBE Ploog KH
16 - 21	Quantitative structure determination of GaAs(001) under typical MBE conditions using synchrotron X-ray diffraction Takahasi M, Mizuki J
22 - 25	Structure transition between two GaAs(001)-c(4 x 4) surface reconstructions in AS(4) flux Arai T, Suzuki M, Ueno Y, Okabayashi J, Yoshino J
26 - 29	Investigation on GaAs(001) surface treated by As-free high temperature surface cleaning method Isomura N, Tsukamoto S, Iizuka K, Arakawa Y
30 - 33	Growth simulation of fish-like pit pattern on GaAs(110) Ishii A, Oda Y
34 - 37	Atomically controlled doping of nitrogen on GaAs(001) surfaces Shimizu N, Inoue T, Kita T, Wada O
38 - 41	RHEED metrology of Stranski-Krastanov quantum dots Feltrin A, Freundlich A
42 - 46	Formation mechanism of rotational twins in beam-induced lateral epitaxy on (111)B GaAs substrate Naritsuka S, Matsuoka S, Kondo T, Saitoh K, Suzuki T, Yamamoto Y, Maruyama T
47 - 49	Atomic arrangement in a CuPt-B-type ordered GaAsSb layer grown by molecular beam epitaxy observed by cross sectional scanning tunneling microscope Gomya A, Ohkouchi S, Kawamura Y
50 - 53	Endotaxy of MnSb into GaSb Braun W, Trampert A, Kaganer VM, Jenichen B, Satapathy DK, Ploog KH
54 - 57	Atmospheric oxygen in Mn doped GaAs/GaAs(001) thin films grown by molecular beam epitaxy Xu JF, Thibado PM, Awo-Affouda C, Moore R, LaBella VP
58 - 61	Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrix Semenov A, Lyublinskaya OG, Solov'ev VA, Meltser BY, Ivanov SV
62 - 66	A simple approach to temperature dependence of strain energy: Application to GaN-based semiconductors Ito T, Araki T, Akiyama T, Nakamura K
67 - 70	Compound-source molecular beam epitaxy of GaN using GaN powder and ammonia as sources Sawada M, Sawadaishi M, Yamamoto H, Arai M, Honda T
71 - 74	In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy Cordier Y, Baron N, Semond F, Massies J, Binetti M, Henninger B, Besendahl M, Zettler T
75 - 78	Ab initio-based approach on initial growth kinetics of GaN on GaN (001) Kangawa Y, Matsuo Y, Akiyama T, Ito T, Shiraishi K, Kakimoto K
79 - 83	Real-time in-situ flux monitoring by wavelength-modulated atomic absorption spectroscopy in molecular beam epitaxy: Application to Ga flux measurement Vignaud D, Mollot F
84 - 87	P-cracker cell temperature effects on the optical properties of AlGaInP : Be layers grown by SSMBE Soubervielle-Montalvo C, Hernandez IC, Sheldon M, Gorbatchev AY, Rodriguez AG, de Anda F, Zamora-Peredo L, Mendez-Garcia VH
88 - 92	Substrate temperature measurement using a commercial band-edge detection system Farrer I, Harris JJ, Thomson R, Barlett D, Taylor CA, Ritchie DA
93 - 96	Influence of interface interruption on spin relaxation in GaAs (110) quantum wells Liu LS, Wang WX, Li ZH, Liu BL, Zhao HM, Wang J, Gao HC, Jiang ZW, Liu S, Chen H, Zhou JM
97 - 100	Imaging of subbands in InAs/GaSb double quantum wells by low-temperature scanning tunneling spectroscopy Suzuki K, Kanisawa K, Perraud S, Ueki M, Takashina K, Hirayama Y
101 - 104	Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy Xu JF, Liu SW, Xiao M, Thibado PM
105 - 108	Thermal imaging of wafer temperature in MBE using a digital camera Jackson AW, Gossard AC
109 - 112	MBE growth of TlInGaAs/TlInP/InP SCH LD structures and their laser operation with low-temperature variation of lasing wavelength Fujiwara A, Krishnamurthy D, Matsumoto T, Hasegawa S, Asahi H
113 - 116	Effects of annealing on TlGaAs/GaAs single hetero structures and TlGaAs/GaAs multiple quantum well structures grown by low-temperature MBE Ohnishi K, Kanda T, Kiriyama H, Kajikawa Y
117 - 120	Thallium incorporation during TlInAs growth by low-temperature MBE Takushima M, Kobayashi N, Yamashita Y, Kajikawa Y, Satou Y, Tanaka Y, Sumida N
121 - 124	Temperature dependence of Bi behavior in MBE growth of InGaAs/InP Feng G, Oe K, Yoshimoto M
125 - 128	Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy Ni HQ, Niu ZC, Fang ZD, Huang SS, Zhang SY, Wu DH, Shun Z, Han Q, Wu RH
129 - 133	Key issues associated with low threshold current density for InP-based quantum cascade lasers Li AZ, Li H, Xu GY, Zhang YG, Lin C, Zhu C, Wei L, Li YY
134 - 138	InAsPSb quaternary alloy grown by gas source molecular beam epitaxy Tsai G, Wang DL, Wu CE, Wu CJ, Lin YT, Lin HH
139 - 144	Development of GaAs-based MOSFET using molecular beam epitaxy Droopad R, Rajagopalan K, Abrokwah J, Adams L, England N, Uebelhoer D, Fejes P, Zurcher P, Passlack M
145 - 147	Growth and subband structure determination of high mobility hole gases on (001) and (110) GaAs Gerl C, Bauer J, Wegseheider W
148 - 151	Dramatic dependence of the Fermi level pinning strength on crystal orientation at clean surfaces of n-type In0.53Ga0.47As grown by molecular beam epitaxy Perraud S, Kanisawa K, Wang ZZ, Hirayama Y
152 - 157	Properties of InSb single-crystal thin films sandwiched by Al0.1In0.9Sb layers with 0.5% lattice mismatch grown on GaAs Geka H, Okamoto A, Yamada S, Goto H, Yoshida K, Shibasaki I
158 - 162	Growth of (In,Ga)As/(Al,Ga)As quantum wells on GaAs(110) by MBE Hey R, Trampert A, Jahn U, Couto ODD, Santos P
163 - 167	Growth of GaAs with orientation-patterned structures for nonlinear optics Yu XJ, Scaccabarozzi L, Lin AC, Fejer MM, Harris JS
168 - 171	Structural and optical studies of (AlAs)(m)/(GaAs)(n) type-I ultra short-period superlattices with fractional monolayer Fujii K, Tsurumachi N, Miyagawa H, Ueji R, Itoh H, Nakanishi S, Akiyama H, Koshiba S
172 - 176	Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on (n 1 1)A GaAs substrates Kitada T, Shimomura S, Hiyamizu S
177 - 180	Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy Mozume T, Kasai J, Nagase M, Simoyama T, Ishikawa H
181 - 184	Buffer influence on AlSb/InAs/AlSb quantum wells Li ZH, Wang WX, Liu LS, Gao HC, Jiang ZW, Zhou JM, Chen H
185 - 189	Negative and positive persistent photoconductivity effects in AlxGa1-xAsySb1-y/InAs quantum wells Ishida S, Fujimoto A, Oto K, Araki M, Shibasaki I
190 - 193	Area selective epitaxy of GaAs with AlGaAs native oxide mask by molecular beam epitaxy Yoshiba I, Iwai T, Uehara T, Horikoshi Y
194 - 198	High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates Desplanque L, Vignaud D, Wallart X
199 - 202	Low-temperature transport properties in AlxGa1-xAsySb1-y/InAs quantum wells: Well-width dependence Ishida S, Fujimoto A, Araki M, Oto K, Okamoto A, Shibasaki I
203 - 206	Low-temperature growth of InSb(111) on Si(111) substrate Murata K, Ahmad NB, Tamura Y, Mori M, Tatsuyama C, Tambo T
207 - 211	Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via 2 x 2-In surface reconstruction Mori M, Saito M, Yamashita Y, Nagashima K, Hashimoto M, Tatsuyama C, Tambo T
212 - 216	Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors Xu AH, Qi M, Zhu FY, Sun H, Ai LK
217 - 220	MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications Yarekha DA, Godey S, Wallart X, Colder H, Zaknoune M, Mollot F
221 - 224	A study on maskless selective growth of Mg-doping p-type GaAs using low-energy focused ion beam Kim EM, Gotoh T, Fukai M, Suzuki T, Pak K
225 - 229	Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxy Chavanapranee T, Horikoshi Y
230 - 234	Dependence of the AlSb buffers on GaSb/GaAs(001) heterostructures Kim HS, Noh YK, Kim MD, Kwon YJ, Oh JE, Kim YH, Lee JY, Kim SG, Chung KS
235 - 239	Invalidity of graded buffers for InAs grown on GaAs (001) - A comparison between direct and graded-buffer growth Jeong Y, Choi H, Suzuki T
240 - 243	Strain compensation for InGaAs-AlAs-AlAsSb coupled double quantum wells by controlling the barrier layer composition Nagase M, Mozume T, Simoyama T, Hasama T, Ishikawa H
244 - 247	Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(100) substrate Noh YK, Park SR, Kim MD, Kwon YJ, Oh JE, Kim YH, Lee JY, Kim SG, Chung KS, Kim TG
248 - 251	Modification of InAs quantum dot structure during annealing Kaizu T, Takahasi M, Yamaguchi K, Mizuki J
252 - 255	Observation of abrupt first-order metal-insulator transition in Be-doped GaAs Kim HT, Youn DH, Chae BG, Kang KY, Lim YS
256 - 259	Properties of low-temperature-grown InAs and their changes upon annealing Shiba M, Ikariyama R, Takushima M, Kajikawa Y
260 - 263	GaMnAs grown on (001), (311) A and (110) GAaS substrates: Comparison of growth conditions and post-growth annealing behaviour Wurstbauer U, Sperl M, Schuh D, Bayreuther G, Sadowski J, Wegscheider W
264 - 267	Effect of substrate temperature on the properties of heavily Mn-doped GaAs Lee HJ, Chiba D, Matsukura F, Ohno H
268 - 272	MBE HgCdTe on si and GaAs substrates He L, Chen L, Wu Y, Fu XL, Wang YZ, Wu J, Yu MF, Yang JR, Ding RJ, Hu XN, Li YJ, Zhang QY
273 - 276	Zn irradiation effects in MBE growth of MgSe/BeZnSeTe II-VI compound superlattices on InP substrates Nomura I, Yamazaki T, Hayashi H, Hayami K, Kato M, Kishino K
277 - 280	Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxy Jo M, Endo M, Kumano H, Suemune I
281 - 284	Structural and optical properties of CdSe quantum dots induced by amorphous Se Aichele T, Robin IC, Bougerol C, Andre R, Tatarenko S, Van Tendeloo G
285 - 288	Al and N co-doped ZnTe layers grown by MBE Ichiba A, Kobayashi M
289 - 292	MBE growth of MgS nanowires characterized using AFM Moug RT, Bradford C, Prior KA
293 - 296	Amorphous-Te-mediated self-organization of CdSe/ZnSe nanostructures Mahapatra S, Margapoti E, Worschech L, Forchel A, Brunner K
297 - 300	Deep emissions of MBE-ZnTe on tilted GaAs substrate Shigaura G, Ohashi M, Ichinohe Y, Kanamori M, Kimura N, Kimura N, Sawada T, Suzuki K, Imai K
301 - 305	Quasi-Stranski-Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy Yang CS, Lai YJ, Chou WC, Chen DS, Wang JS, Chien KF, Shih YT
306 - 309	Light up-conversion mechanism of ZnSe-ZnTe superlattices Ohashi M, Shigaura G, Ichinohe Y, Kanamori M, Chikarayumi Y, Sasaki Y, Kimura N, Kimura N, Sawada T, Suzuki K, Imai K, Trubenko PA, Korostelin YV
310 - 314	Layer-by-layer growth and island formation in CdSe/ZnSe heteroepitaxy Mahapatra S, Kiessling T, Margapoti E, Astakhov GV, Ossau W, Worschech L, Forchel A, Brunner K
315 - 318	Very thin, high Ge content Si0.3Ge0.7 relaxed buffer grown by MBE on SOI(001) substrate Myronov M, Shiraki Y
319 - 323	Island motion triggered by the growth of strain-relaxed SiGe/Si(001) islands Merdzhanova T, Rastelli A, Stoffel M, Kiravittaya S, Schmidt OG
324 - 329	Isotopically controlled self-assembled Ge/Si nanostructures Moutanabbir O, Miyamoto S, Fujimoto A, Itoh KM
330 - 334	High-quality heteroepitaxial Ge growth on nano-patterned Si templates using diblock copolymer patterning Lee J, Wang KL, Chen HT, Chen LJ
335 - 338	Growth of strain relaxed Si1-yCy films using SOI substrates Murano M, Ishihara H, Yamada A, Konagai M
339 - 342	Fabrication of Ge channels with extremely high compressive strain and their magnetotransport properties Sawano K, Kunishi Y, Toyama K, Okamoto T, Usami N, Nakagawa K, Shiraki Y
343 - 348	Growth temperature dependence of lattice structures of SiGe/graded buffer structures grown on Si(110) substrates by gas-source MBE Arimoto K, Yamanaka J, Nakagawa K, Sawano K, Shiraki Y, Usami N, Nakajima K
349 - 352	Surface morphology of the Si(111) surface induced by Co-deposition of Si and CH4 Suryana R, Ichimiya A, Nakahara H, Saito Y
353 - 357	Polarization-induced two-dimensional electron gas at Zn1-xMgxO/ZnO heterointerface Yano M, Hashimoto K, Fujimoto K, Koike K, Sasa S, Inoue M, Uetsuji Y, Ohnishi T, Inaba K
358 - 361	High electron mobility Zn polar ZnMgO/ZnO heterostructures grown by molecular beam epitaxy Tampo H, Matsubara K, Yamada A, Shibata H, Fons P, Yamagata M, Kanie H, Niki S
362 - 365	p-Type ZnO on sapphire by using O-2-N-2 co-activating and fabrication of ZnO LED Zhang ZZ, Wei ZP, Lu YM, Shen DZ, Yao B, Li BH, Zhao DX, Zhang JY, Fan XW, Tang ZK
366 - 369	Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy Chauveau JM, Buell DA, Laugt M, Vennegues P, Teisseire-Doninelli M, Berard-Bergery S, Deparis C, Lo B, Vinter B, Morhain C
370 - 372	ZnO epitaxial films grown by flux-modulated RF-MBE Hirano K, Fujita M, Sasajima M, Kosaka T, Horikoshi Y
373 - 377	Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE Lu YM, Wang X, Zhang ZZ, Shen DZ, Su SC, Yao B, Li BH, Zhang JY, Zhao DX, Fan XW, Tang ZK
378 - 380	A novel approach of using a MBE template for ALD growth of high-kappa dielectrics Lee KY, Lee WC, Huang ML, Chang CH, Lee YJ, Chiu YK, Wu TB, Hong M, Kwo R
381 - 385	Growth of praseodymium oxide and silicate for high-kappa dielectrics by molecular beam epitaxy Watahiki T, Tinkham BP, Jenichen B, Braun W, Ploog KH
386 - 389	MBE grown high-quality Gd2O3/Si(111) hetero-structure Lin TD, Hang MC, Hsu CH, Kwo J, Hong M
390 - 393	MBE grown high kappa dielectrics Ga2O3(Gd2O3) on GaN Chang YC, Lee YJ, Chiu YN, Lin TD, Wu SY, Chiu HC, Kwo J, Wang YH, Hong M
394 - 399	Characterization of Au thin films deposited on alpha-Sn(111)-(3 x 3)/InSb(111)A surfaces Kasukabe Y, Zhao X, Nishida S, Fujino Y
400 - 403	Structural and transport properties of beta-FeSi2 [100] oriented thin film on Si(001) substrate Kakemoto H, Higuchi T, Shibata H, Wada S, Tsurumi T
404 - 409	Quality improvement of III-nitride epilayers and their heterostructures grown on vicinal substrates by rf-MBE Shen XQ, Furuta K, Nakamura N, Matsuhata H, Shimizu M, Okumura H
410 - 413	A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxy Suda J, Horita M, Armitage R, Kimoto T
414 - 416	Be and Mg co-doping in GaN Kawaharazuka A, Tanimoto T, Nagai K, Tanaka Y, Horikoshi Y
417 - 419	MBE growth of GaN using N-15 isotope for nuclear magnetic resonance applications Novikov SV, Morris RD, Kent AJ, Geen HL, Foxon CT
420 - 423	Effects of V/III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxy Sawahata J, Seo J, Takiguchi M, Saito D, Nemoto S, Akimoto K
424 - 428	Low-temperature deposition of hexagonal GaN films for UV electroluminescent devices by CS-MBE technique Honda T, Egawa S, Sugimoto K, Arai M
429 - 433	AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization Storm DF, Katzer DS, Roussos JA, Mittereder JA, Bass R, Binari SC, Hanser D, Preble EA, Evans KR
434 - 436	Developments for the production of high-quality and high-uniformity AlGaN/GaN heterostructures by ammonia MBE Cordier Y, Semond F, Massies J, Leroux M, Lorenzini P, Chaix C
437 - 441	Growth of GaN-HEMT structures using super lattice quasi-AlGaN alloy barriers on vicinal SiC substrates by rf-MBE Furuta K, Nakamura N, Shen XQ, Shimizu M, Kitamura T, Nakamura K, Okumura H
442 - 446	GaN nanostructures and HFET structures selectively grown on silicon substrates by ammonia-MBE Tang H, Bardwell JA, Lapointe J, Raymond S, Fraser J, Haffouz S, Rolfe S
447 - 451	Fabrication of lateral lattice-polarity-inverted GaN heterostructure Katayama R, Kuge Y, Kondo T, Onabe K
452 - 456	Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0001) vicinal substrates Nakamura N, Furuta K, Shen XQ, Kitamura T, Nakamura K, Okumura H
457 - 460	Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy Liu XY, Aggerstam T, Janes P, Holmstrom P, Lourdudoss S, Thylen L, Andersson TG
461 - 464	Growth and optical properties of AlN homoepitaxial layers grown by ammonia-source molecular beam epitaxy Iwata S, Nanjo Y, Okuno T, Kurai S, Taguchi T
465 - 468	InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500-650 nm range Ivanov SV, Jmerik VN, Shubina TV, Listoshin SB, Mizerov AM, Sitnikova AA, Kim MH, Koike M, Kim BJ, Kop'ev PS
469 - 472	Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates Jmerik VN, Mizerov AM, Shubina TV, Yagovkina M, Listoshin VB, Sitnikova AA, Ivanov SV, Kim MH, Koike M, Kim BJ
473 - 477	Growth of In-rich InGaN films on sapphire via GaN layer by RF-MBE Komaki H, Nakamura T, Katayama R, Onabe K, Ozeki M, Ikari T
478 - 481	MBE growth of GaN on MgO substrate Suzuki R, Kawaharazuka A, Horikoshi Y
482 - 485	Use of band-gap thermometry to investigate the growth of GaN on sapphire and GaAs Foxon CT, Campion RP, Grant VA, Novikov SV, Harris JJ, Thomson R, Taylor C, Barlett D
486 - 489	Fabrication of GaN dot structure by droplet epitaxy using NH3 Maruyama T, Otsubo H, Kondo T, Yamamoto Y, Naritsuka S
490 - 495	Growth of InN nanocolumns by RF-MBE Nishikawa S, Nakao Y, Naoi H, Araki T, Na H, Nanishi Y
496 - 499	In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxy Wang XQ, Che SB, Ishitani Y, Yoshikawa A
500 - 503	A quantitative study of suppression effect for oxygen contamination by Ga beam irradiation in InN RF-MOMBE growth Hashimoto A, Iwao K, Isamoto K, Yamamoto A
504 - 507	Effects of nitrogen plasma irradiation during the growth process after buffer layer growth on the characteristics of hexagonal InN films grown on Si (111) by electron-cyclotron resonance plasma-assisted molecular-beam epitaxy Yodo T, Shimada T, Tagawa S, Harada Y
508 - 512	RF-MBE growth and structural characterization of cubic InN films on yttria-stabilized zirconia (001) substrates Nakamura T, Tokumoto Y, Katayama R, Yamamoto T, Onabe K
513 - 516	RF-MBE growth of InN/InGaN quantum well structures on 3C-SiC substrates Hirano S, Inoue T, Shikata G, Orihara M, Hijikata Y, Yaguchi H, Yoshida S
517 - 520	RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayer Shikata G, Hirano S, Inoue T, Orihara M, Hijikata Y, Yaguchi H, Yoshida S
521 - 524	The influence of indium monolayer insertion on the InN epifilm grown by plasma-assisted molecular beam epitaxy Yao YZ, Sekiguchi T, Sakuma Y, Ohashi N
525 - 528	All-GaInNAs ultrafast lasers: Material development for emitters and absorbers Rutz A, Liverini V, Muller E, Schon S, Keller U
529 - 533	Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of 1.55 mu m (Ga,In)(N,As) multiple quantum wells Ishikawa F, Trampert A, Ploog KH
534 - 538	TlGaInNAs/GaAs double quantum well structures: Effect of barrier layers and substrate orientation Krishnamurthy D, Matsumoto T, Fujiwara A, Hasegawa S, Asahi H
539 - 544	Band alignments of InGaPN/GaPN quantum well structures on GaP and Si Umeno K, Kim SM, Furukawa Y, Yonezu H, Wakahara A
545 - 547	Growth of low-threshold GaInNAs/GaAs triple-quantum-well lasers Kasai J, Kitatani T, Adachi K, Nakahara K, Aoki M
548 - 551	Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy Liu HF, Xiang N, Zhou HL, Chua SJ, Yang P, Moser HO
552 - 555	Optical characterization of (In,Ga)(As,N) thin films grown by molecular beam epitaxy on non-(100) GaAs substrates Ibanez J, Henini M, Kudrawiec R, Misiewicz J, Schmidbauer M, Hopkinson M
556 - 559	Nitrogen-dependent effects on GaInNAs photoluminescence upon annealing Liverini V, Rutz A, Keller U, Schon S
560 - 564	Effect of residual hydrogen and temperature on initial growth stages and properties of GaAs1-xNx Fotkatzikis A, Freundlich A
565 - 569	Study of optical properties of GaAsN layers prepared by molecular beam epitaxy Pulzara-Mora A, Cruz-Hernandez E, Rojas-Ramirez J, Contreras-Guerrero R, Melendez-Lira M, Falcony-Guajardo C, Aguilar-Frutis MA, Lopez-Lopez M
570 - 574	Parameter tunable GaInNAs saturable absorbers for mode locking of solid-state lasers Rutz A, Liverini V, Grange R, Haiml M, Schon S, Keller U
575 - 578	Improvement of crystal quality of thick InGaAsN layers grown on InP substrates by adding antimony Miura K, Nagai Y, Iguchi Y, Okada H, Kawamura Y
579 - 582	Effect of growth temperature on the properties of Ga(In)NAs thin films by atomic hydrogen-assisted RF-MBE Shimizu Y, Miyashita N, Mura Y, Uedono A, Okada Y
583 - 587	GaNAs/GaAs multiple quantum well grown by modulated N radical beam sequence of RF-MBE: Effect of growth interruption Fujii K, Takao K, Kumamoto T, Kakino M, Tsurumachi N, Miyagawa H, Ueji R, Itoh H, Nakanishi S, Akiyama H, Koshiba S
588 - 591	Structural and magnetic properties of epitaxial Fe3Si/GaAs heterostructures Hsu YL, Lee YJ, Chang YH, Huang ML, Chiu YN, Ho CC, Chang P, Hsu CH, Hong M, Kwo J
592 - 596	Growth, interface structure and magnetic properties of Heusler alloy CO2FeSi/GaAs(001) hybrid structures Hashimoto M, Herfort J, Trampert A, Ploog KH
597 - 601	Epitaxial growth of ferromagnetic Fe3N films on Si(111) substrates by molecular beam epitaxy Yamaguchi K, Yui T, Yamaki K, Kakeya I, Kadowaki K, Suemasu T
602 - 606	Electron spin injection from a regrown Fe layer in a spin-polarized vertical-cavity surface-emitting laser Holub M, Bhattacharya P, Shin J, Saha D
607 - 610	Epitaxial growth of bcc Mn films on 4H-SIC(0001) by molecular beam epitaxy Wang WH, Takano F, Ofuchi H, Akinaga H
611 - 614	Schottky barrier MOSFETs with epitaxial ferromagnetic MnAs/Si(001) source and drain: Post-growth annealing and transport characteristics Sugiura K, Nakane R, Sugahara S, Tanaka M
615 - 618	Molecular beam epitaxy growth, magnetic and structural properties of MnAs thin films grown on InP(001) and InGaAsP Yokoyama M, Ohya S, Tanaka M
619 - 622	Formation and properties of MnAs magnetic nanoscaled dots on sulfur-passivated semiconductor substrates Kubo K, Kanai K, Okabayashi J, Oshima M, Ofuchi H
623 - 626	Preparation of high-Tc ferromagnetic (In,Mn)As with strongly As-rich conditions Schallenberg T, Munekata H
627 - 630	Fabrication, structural and magnetic properties of InAlMnAs and InAlAs : MnAs granular thin films Yokoyama M, Ohya S, Tanaka M
631 - 633	Theoretical study of alloy phase stability in zincblende Ga1-xMnxAs Hatano K, Nakamura K, Akiyama T, Ito T
634 - 637	Enhanced magnetization by modulated Mn delta doping in GaAs Yanagisawa K, Takeuchi S, Yoshitake H, Onomitsu K, Horikoshi Y
638 - 641	Epitaxial GaMnAs layers and nanostructures with anisotropy in structural and magnetic properties Wenisch J, Ebel L, Gould C, Schmidt G, Molenkamp LW, Brunner K
642 - 646	Molecular beam epitaxy and magnetic properties of GaMnNAs Kobayashi G, Mori T, Kato T, Hanada T, Makino H, Yao T
647 - 650	Epitaxial growth and magnetic properties of GaMnNAs Manago T, Sinsarp A, Kawaguchi K, Akinaga H
651 - 655	Growth and characterization of ferromagnetic cubic GaCrN: Structural and magnetic properties Kimura S, Emura S, Ofuchi H, Zhou YK, Hasegawa S, Asahi H
656 - 661	MBE growth of Mn-doped Zn-Sn-As compounds on (001) InP substrates Asubar JT, Kato A, Kambayashi T, Nakamura S, Jinbo Y, Uchitomi N
662 - 665	Existence of localized spins in pair delta-doped GaAs structures Noh JP, Idutsu Y, Otsuka N
666 - 670	Percolation transition via quantum point contacts in Be delta-doped GaAs structures grown by molecular beam epitaxy Shimogishi F, Noh JP, Idutsu Y, Otsuka N
671 - 675	The coherent {100} and {110} interfaces between rocksalt-PbTe and zincblende-CdTe Groiss H, Heiss W, Schaffler F, Leitsmann R, Bechstedt F, Koike K, Harada H, Yano M
676 - 679	Epitaxial growth and luminescence characterization of Si/beta-FeSi2/Si multilayered structures by molecular beam epitaxy Murase S, Sunohara T, Suemasu T
680 - 683	Molecular beam epitaxy of band gap tunable ternary semiconducting silicides Ba1-xSrxSi2 for photovoltaic application Suemasu T, Morita K, Kobayashi M
684 - 686	Thin film growth of (Cu, C)Ba2Ca(n-1)CunOy (n=1-4) superconductor by molecular beam epitaxy Shibata H, Karimoto S, Tsukada A, Makimoto T
687 - 691	Characteristics of multivalent impurity doped C-60 films grown by MBE Nishinaga J, Aihara T, Kawaharazuka A, Horikoshi Y
692 - 696	Kinetic model of intermixing during self-assembled InAs quantum dot formation Heyn C, Schramm A, Kipp T, Hansen W
697 - 700	MBE growth of self-assembled InGaAs quantum dots aligned along quasi-periodic multi-atomic steps on a vicinal (111)B GaAs surface Akiyama Y, Sakaki H
701 - 704	Guided quantum dot ordering by self-organized anisotropic strain engineering and step engineering on shallow-patterned substrates Selcuk E, van Lippen T, Hamhuis GJ, Notzel R
705 - 708	Initial stages of self-assembled InAs/InP(001) quantum wire formation Fuster D, Alen B, Gonzalez L, Gonzalez Y, Martinez-Pastor J
709 - 712	Emission-wavelength extension of nitrided InAs/GaAs quantum dots with different sizes Mizuno H, Inoue T, Kikuno M, Kita T, Wada O, Mori H, Yasuda H
713 - 717	High-density InSb-based quantum dots emitting in the mid-infrared Tasco V, Deguffroy N, Baranov AN, Tournie E, Satpati B, Trampert A, Dunaevski M, Titkov A
718 - 721	Amplified spontaneous emission from GaSb quantum dots in Si grown by MBE Yasuhara N, Jo M, Sugawara Y, Kawamoto K, Fukatsu S
722 - 725	Photoluminescence characterization of PbTe/CdTe quantum dots grown by lattice-type mismatched epitaxy Koike K, Harada H, Itakura T, Yano M, Heiss W, Groiss H, Kaufmann E, Hesser G, Schaffler F
726 - 730	Selective growth of InAs quantum dots using In nano-dot arrays formed by nano-jet probe method Ohkouchi S, Sugimoto Y, Ozaki N, Ishikawa H, Asakawa K
731 - 734	Electronic properties of self-assembled InAs quantum dots on GaAs surfaces probed by lateral electron tunneling structures Shibata K, Jung M, Hirakawa K, Machida T, Ishida S, Arakawa Y, Sakaki H
735 - 739	Self-assembled lateral Bi-quantum-dot molecule formation by gas-source molecular beam epitaxy Suraprapapich S, Shen YM, Odnoblyudov VA, Fainman Y, Panyakeow S, Tu CW
740 - 743	Ring-shaped GaAs quantum dot laser grown by droplet epitaxy: Effects of post-growth annealing on structural and optical properties Mano T, Kuroda T, Mitsuishi K, Yamagiwa M, Guo XJ, Furuya K, Sakoda K, Koguchi N
744 - 747	Selective growth of ordered InGaAs quantum dots on patterned substrates with nano-hole arrays Ohkouchi S, Nakamura Y, Ikeda N, Sugimoto Y, Asakawa K
748 - 750	Shape transformation of self-assembled InAs quantum dots by overgrowth with GaAs and AlAs Schramm A, Schaefer J, Kipp T, Heyn C, Hansen W
751 - 754	Fabrication of ultra-low density and long-wavelength emission InAs quantum dots Huang SS, Niu ZC, Ni HQ, Xiong YH, Zhan F, Fang ZD, Xia JB
755 - 758	Fabrication of high-quality CdSe quantum dots for green laser diodes by molecular beam epitaxy Ohkuno K, Oku H, Araki Y, Nagata N, Saraie J
759 - 761	Lateral self-arrangement of self-assembled InAs quantum dots by an intentional-induced dislocation network Welsch H, Kipp T, Heyn C, Hansen W
762 - 765	InAs quantum dots array grown with an As-2 source on non-planar GaAs substrates Sugaya T, Morohashi I, Komori K, Amano T
766 - 770	Dosage dependence of Ge quantum dots grown on carbon-implanted Si substrates Ogawa M, Cha DH, Lee JY, Wang KL
771 - 775	Selective area growth of InAs quantum dots with a metal mask towards optical integrated circuit devices Ozaki N, Takata Y, Ohkouchi S, Sugimoto Y, Nakamura Y, Ikeda N, Asakawa K
776 - 780	Optical properties of stacked InAs self-organized quantum dots on InP (311)B Oshima R, Akahane K, Tsuchiya M, Shigekawa H, Okada Y
781 - 784	Growth and magneto-optical properties of CdSe/ZnMnSe self-assembled quantum dots Lee S, Dobrowolska M, Furdyna JK
785 - 788	Feasibility study of a semiconductor quantum bit structure based on a spin FET embedded with self-assembled InAs quantum dots Kashiwada S, Matsuda T, Yoh K
789 - 792	Investigation of CdSe quantum dots in MgS barriers as active region in light emitting diodes Gust A, Kruse C, Hommel D
793 - 796	Effect of strain anisotropies on RHEED patterns of quantum dots Feltrin A, Freundlich A
797 - 800	High-temperature growth of Mn-irradiated InAs quantum dots Nagahara S, Tsukamoto S, Arakawa Y
801 - 804	InGaAs quantum dots grown with As-4 and As-2 sources using molecular beam epitaxy Sugaya T, Furue S, Amano T, Komori K
805 - 808	Optical properties of p-type modulation-doped InAs quantum dot structures grown by molecular beam epitaxy Kumagai N, Watanabe K, Nakata Y, Arakawa Y
809 - 811	Green light emitting diodes with CdSe quantum dots Araki Y, Ohkuno K, Furukawa T, Saraie J
812 - 816	Evolution of self-assembled lateral quantum dot molecules Sirlpitakchai N, Suraprapapich S, Thainoi S, Kanjanachuchai S, Panyakeow S
817 - 820	Temperature-insensitive detectivity infrared photodetectors with of 5-pair InAs/GaAs quantum-dot asymmetric device structure Chou ST, Chen SF, Lin SY, Wu MC, Wang JM
821 - 824	MBE growth of InAs self-assembled quantum dots embedded in GaNAs strain-compensating layers Hashimoto T, Oshima R, Shigekawa H, Okada Y
825 - 827	AlAs coating for stacked structure of self-assembled InAs/GaAs quantum dots Yokota H, Iizuka K, Okamoto H, Suzuki T
828 - 832	Molecular beam epitaxial growth of very large lateral anisotropic GaSb/GaAs quantum dots Jiang C, Kawazu T, Kobayashi S, Sakaki H
833 - 836	Intersubband absorption in p-type Si1-xGex quantum dots on pre-patterned Si substrates made by a diblock copolymer process Cha D, Ogawa M, Chen C, Kim S, Lee J, Wang KL, Wang JY, Russell TP
837 - 840	An empirical potential approach to the structural stability of InAs stacking-fault tetrahedron in InAs/GaAs(111) Joe H, Akiyama T, Nakamura K, Kamsawa K, Ito T
841 - 845	The influence of InAs coverage on the performances self-assembled InGaAs quantum rings Huang CY, Wu MC, Lin SY, Dai JH, Lee SC
846 - 848	Site control of very low density InAs QDs on patterned GaAs nano-wire surfaces Ueta A, Akahane K, Gozu S, Yamamoto N, Ohtani N, Tsuchiya M
849 - 852	Closely stacking growth of highly uniform InAs quantum dots on self-formed GaAs nanoholes Tsukiji N, Yamaguchi K
853 - 856	GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperature Harmand JC, Tchernycheva M, Patriarche G, Travers L, Glas F, Cirlin G
857 - 861	Selective MBE growth of hexagonal networks of trapezoidal and triangular GaAs nanowires on patterned (111)B substrates Tamai I, Hasegawa H
862 - 865	A Monte-Carlo simulation study of twinning formation in InP nanowires Sano K, Akiyama T, Nakamura K, Ito T
866 - 870	Growth temperature dependence of MBE-grown ZnSe nanowires Chan SK, Cai Y, Wang N, Sou IK
871 - 875	Orientation and size dependence on structural stability in silicon nanowires: A transferable tight-binding calculation study Maeda S, Akiyama T, Nakamura K, Ito T
876 - 879	Formation of patterned GaInAs/GaAs hetero-structures using amorphous arsenic mask Noritake Y, Yamada T, Tabuchi M, Takeda Y
880 - 883	Structure of GaSb/GaAs(001) surface using the first principles calculation Ishii A, Fujiwara K, Tsukamoto S, Kakuda N, Yamaguchi K, Arakawa Y
884 - 888	Study of the GaAs MBE growth on (631)-oriented substrates by Raman spectroscopy Cruz-Hernandez E, Pulzara-Mora A, Rojas-Ramirez J, Contreras-Guerrero R, Vazquez D, Rodriguez AG, Mendez-Garcia VH, Lopez-Lopez M
889 - 892	Interface analysis of InAs/GaSb superlattice grown by MBE Satpati B, Rodriguez JB, Trampert A, Tournie E, Joullie A, Christol P
893 - 896	Epitaxial growth of GaInAs/AlGaAsSb quantum cascade lasers Manz C, Yang Q, Kirste L, Kohler K
897 - 901	Piezoresistance of suspended InAs/AlGaSb heterostructure nanobeam Yamazaki K, Etaki S, van der Zant HSJ, Yamaguchi H
902 - 905	Ultra-low-frequency photocurrent self-oscillation in strained InxGa1-xAs quantum well diodes Tanigawa K, Fujiwara K, Sano N
906 - 909	Enhancement of magnetic field in superconductor and magnetic semiconductor quantum well hybrid structure Lee S, Shin DY, Hyun EK, Lee SR, Dobrowolska M, Furdyna JK
910 - 913	g-factor of two-dimensional electrons in selectively doped n-AlGaAs/GaAs heterojunctions with embedded InGaAs quantum dots Kawazu T, Sakaki H
914 - 922	MBE-grown metamorphic lasers for applications at telecom wavelengths Ledentsov NN, Shchukin VA, Kettler T, Posilovic K, Bimberg D, Karachinsky LY, Gladyshev AY, Maximov MV, Novikov II, Shernyakov YM, Zhukov AE, Ustinov VM, Kovsh AR
923 - 926	Molecular beam epitaxial growth and characteristics of ultra-low threshold 1.45 mu m metamorphic InAs quantum dot lasers on GaAs Mi Z, Yang J, Bhattacharya P
927 - 930	Room temperature, low-threshold distributed feedback quantum cascade lasers at similar to 8.4 and similar to 7.7 mu m Xu GY, Wei L, Li YY, Li AZ, Lin C, Zhang YG, Li H
931 - 934	High-power, narrow-ridge, mid-infrared interband cascade lasers Canedy CL, Kim CS, Kim M, Larrabee DC, Nolde JA, Bewley WW, Vurgaftman I, Meyer JR
935 - 940	Tuning the emission frequency of a 2 THz quantum cascade laser by altering the total thickness of the structure Beere HE, Worrall CH, Whelan S, Ritchie DA, Alton J, Barbieri S, Sirtori C
941 - 944	Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3 mu m Boehm G, Grau M, Dier O, Windhorn K, Roenneberg E, Rosskopf J, Shau R, Meyer R, Ortsiefer M, Amann MC
945 - 950	MBE-grown ultra-large aperture single-mode vertical-cavity surface-emitting laser with all-epitaxial filter section Blokhin SA, Karachinsky LY, Novikov II, Kuznetsov SM, Gordeev NY, Shernyakov YM, Savelyev AV, Maximov MV, Mutig A, Hopfer F, Kovsh AR, Mikhri SS, Krestnikov IL, Livshits DA, Ustinov VM, Shchukin VA, Ledentsov NN, Bimberg D
951 - 954	MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices Akazawa M, Hasegawa H
955 - 958	Metamorphic molecular beam epitaxy growth and selective wet etching for epitaxial layer lift-off of AlAsSb toward optical waveguides with high optical confinement Ozua S, Akahane K, Yamamoto N, Ueta A, Ohtani N, Tsuchiya M
959 - 962	Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs Li LH, Rossetti M, Patriarche G, Fiore A
963 - 966	Properties of InAsSbN quantum well laser diodes operating at 2 mu m wavelength region grown on InP substrates Kawamura Y, Inoue N
967 - 970	Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93 mu m Cerutti L, Boissier G, Grech P, Perona A, Angellier J, Rouillard Y, Tournie E, Genty F, Dente GC, Kaspi R
971 - 974	Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy Tangring I, Wang SM, Sadeghi M, Larsson A, Wang XD
975 - 978	Molecular-beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emission Yoshimoto M, Huang W, Feng G, Tanaka Y, Oe K
979 - 983	Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy Zhao H, Xu YQ, Ni HQ, Zhang SY, Han Q, Du Y, Yang XH, Wu RH, Niu ZC
984 - 988	Photonic dot structure which emits photons horizontally to a built-in waveguide Mukai K, Yamamoto Y
989 - 992	Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wells Xiang N, Liu HF, Kong J, Tang DY, Pessa M
993 - 996	III-V dilute nitride-based multi-quantum well solar cell Freundlich A, Fotkatzikis A, Bhusal L, Williams L, Alemu A, Zhu W, Coaquira JAH, Feltrin A, Radhakrishnan G
997 - 1000	High performance miniaturized InSb photovoltaic infrared sensors operating at room temperature Kuze N, Camargo EG, Ueno K, Morishita T, Sato M, Kurihara M, Endo H, Ishibashi K
1001 - 1004	Solid source MBE growth on InP-based DHBTs for high-speed data communication Aidam R, Losch R, Driad R, Schneider K, Makon R
1005 - 1008	High-speed InGaAsSb/InP double heterojunction bipolar transistor with composition graded base and InAs emitter contact layers Wu BR, Snodgrass W, Feng M, Cheng KY
1009 - 1012	Interfacial trap characteristics in depletion mode GaAs MOSFETs Lee TC, Chan CY, Tsai PJ, Hsu SSH, Kwo J, Hong M
1013 - 1016	Depletion-mode GaAs-based MOSFET with Ga2O3(Gd2O3) as a gate dielectric Tsai PJ, Chu LK, Chen YW, Chiu YN, Yang HP, Chang P, Kwo J, Chi J, Hong M
1017 - 1020	High current density and high PVCR Si/Si1-xGex DQW RTD formed with quadruple-layer buffer Maekawa H, Sano Y, Ueno C, Suda Y
1021 - 1024	Fabrication and characterization of C60FET using highly c-axis oriented poly-crystalline AlN insulator film Hashimoto A, Matsumoto K, Yamamoto A
1025 - 1029	Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs on (411)A-oriented substrates by MBE Watanabe I, Shinohara K, Kitada T, Shimomura S, Endoh A, Yamashita Y, Mimura T, Hiyamizu S, Matsui T