Materials Science Forum

Materials Science Forum, Vol.483 Entire volume, number list

ISSN: 0255-5476 (Print)

In this Issue (253 articles)

3 - 8	Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes Pons M, Blanquet E, Dedulle JM, Ucar M, Wellmann P, Danielsson O, Ferret P, Di Cioccio L, Baillet F, Chaussende D, Madar R
9 - 12	Growth of large diameter SiC crystals by advanced physical vapor transport Anderson T, Barrett D, Chen J, Emorhokpor E, Gupta A, Hopkins R, Souzis A, Tanner C, Yoganathan M, Zwieback I, Choyke WJ, Devaty RP, Yan F
13 - 16	Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution Kusunoki K, Kamei K, Ueda Y, Naga S, Ito Y, Hasebe M, Ujihara T, Nakajima K
17 - 20	Growth of 2 inches 6H-SIC single crystals by sublimation method: the comparison of alpha- and beta-SiC powders Seo SH, Song JS, Oh MH, Wang YZ
21 - 24	A study of 6H-seeded 4H-SIC bulk growth by PVT Tupitsyn EY, Arjunan A, Bondokov RT, Kennedy RM, Sudarshan TS
25 - 30	Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions Wellmann PJ, Straubinger TL, Desperrier P, Muller R, Kunecke U, Sakwe SA, Schmitt H, Winnacker A, Blanquet E, Dedulle JM, Pons M
31 - 34	High Al-doping of SiC using a modified PVT (M-PVT) growth set-up Muller R, Kunecke U, Weingartner R, Schmitt H, Desperrier P, Wellmann P
35 - 38	Growth of undoped (vanadium-Free) semi-insulating 6H-SiC single crystals Anderson TA, Barrett DL, Chen J, Emorhokpor E, Gupta A, Hopkins RH, Souzis AE, Tanner CD, Yoganathan M, Zwieback I
39 - 42	Effect of nitrogen doping on the formation of planar defects in 4H-SiC Siche D, Albrecht M, Doerschel J, Irmscher K, Rost RJ, Rossberg M, Schulz D
43 - 46	Evolution roots of growth-induced polytype domains in 6H-SiC single crystals Seo SH, Song JS, Oh RH, Wang YZ
47 - 50	SiC crystal growth by sublimation method with modification of crucible and insulation felt design Kim JG, Ku KR, Kim DJ, Kim SP, Lee WJ, Shin YP, Lee GH, Kim IS
53 - 56	Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor Nishizawa SI, Pons M
57 - 60	Epitaxial deposition of silicon carbide films in a horizontal hotwall CVD reactor Veneroni A, Omarini F, Masi M, Leone S, Mauceri M, Pistone G, Abbondanza G
61 - 66	SiC and ill-nitride growth in a hot-wall CVD reactor Janzen E, Bergman JP, Danielsson O, Forsberg U, Hallin C, Ul Hassan J, Henry A, Ivanov IG, Kakanakova-Georgieva A, Persson P, ul Wahab Q
67 - 71	New achievements on CVD based methods for SIC epitaxial growth Crippa D, Valente GL, Ruggiero A, Neri L, Reitano R, Calcagno L, Foti G, Mauceri M, Leone S, Pistone G, Abbondanza G, Abbagnale G, Veneroni A, Omarini F, Zamolo L, Masi M, Roccaforte F, Giannazzo F, Di Franco S, La Via F
73 - 76	Increased growth rate in a SiCCVD reactor using HCl as a growth additive Myers R, Kordina O, Shishkin Z, Rao S, Everly R, Saddow SE
77 - 80	High growth rate (up to 20 mu m/h) SiC epitaxy in a horizontal hot-wall reactor Zhang J, Mazzola J, Hoff C, Koshka Y, Casady J
81 - 84	Homoepitaxial growth of 4H-SiC using CH3Cl carbon precursor Koshka Y, Lin HD, Melnychuk G, Mazzola MS, Wyatt JL
85 - 88	Improved surface morphology and background doping concentration in 4H-SiC(000-1) epitaxial growth by hot-wall CVD Wada A, Kimoto T, Nishikawa K, Matsunami H
89 - 92	4H-SiC epitaxial growth on SiC substrates with various off-angles Saitoh H, Kimoto T
93 - 96	2-inch 4H-SIC homoepitaxial layer grown on on-axis C-face substrate by CVD method Kojima K, Okumura H, Kuroda S, Arai D, Ohi A, Akinaga H
97 - 100	Investigation of basal plane dislocations in the 4H-SiC epilayers grown on {0001} substrates Tsuchida A, Miyanagi T, Kamata I, Nakamura T, Izumi K, Nakayama K, Ishii R, Asano K, Sugawara Y
101 - 104	Epitaxial growth and characterisation of phosphorus doped SiC using TBP as precursor Henry A, Janzen E
105 - 108	Experimental investigation and simulation of silicon droplets formation during SiCCVD epitaxial growth Melnychuk G, Koshka Y, Mazzola MS, Wyatt JL
109 - 112	Structural improvement of seeds for bulk crystal growth by using hot-wall CVD of 4H-SiC Wagner A, Schulz D, Doerschel J
113 - 116	CVD growth and characterization of 4H-SiC epitaxial film on (1120) as-cut substrates Zhang ZH, Gao Y, Arjunan AC, Toupitsyn EY, Sadagopan P, Kennedy R, Sudarshan TS
117 - 120	Evaluation of p-type doping for (1,1,-2,0) epitaxial layers grown on alpha-cut (1,1,-2,0) 4H-SiC substrates Blanc C, Zielinski M, Souliere V, Sartel C, Juillaguet S, Contreras S, Camassel J, Monteil Y
121 - 124	Aluminium doping of 4H-SiC grown with HexaMethylDiSilane Sartel C, Souliere V, Zielinski M, Monteil Y, Camassel J, Rushworth S
125 - 128	Is the Al solubility limit in SiC temperature dependent or not? Jacquier C, Ferro G, Zielinski M, Polychroniadis EK, Andreadou A, Camassel J, Monteil Y
129 - 132	Homoepitaxial growth on 4H-SiC (03(3)over-bar-8) face by sublimation close space technique Yoneda S, Furusho T, Takagi H, Ohta S, Nishino S
133 - 136	LPE of silicon carbide using diluted Si-Ge flux Filip O, Epelbaum B, Bickermann M, Winnacker A
137 - 140	Large area SiC epitaxial layer growth in a warm-wall planetary VPE reactor Burk AA, O'Loughlin MJ, Paisley MJ, Powell AR, Brady MF, Leonard RT, Muller S, Allen ST
141 - 146	Epitaxial growth of n-type 4H-SiC on 3" wafers for power devices Thomas B, Hecht C
147 - 150	Epitaxial overgrowth of 4H-SiC for devices with p-buried floating junction structure Nishio J, Ota C, Shinohe T, Kojima K, Okumura H
151 - 154	Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage Schottky diodes Fujiwara H, Kimoto T, Tojo T, Matsunami H
155 - 158	Development of epitaxial SiC processes suitable for bipolar power devices Sumakeris JJ, Das MK, Ha S, Hurt E, Irvine K, Paisley MJ, O'Loughlin MJ, Palmour JW, Skowronski M, Hobgood HM, Carter CH
159 - 162	Characteristics of trench-refilled 4H-SiC p-n junction diodes fabricated by selective epitaxial growth Li C, Losee P, Seiler J, Bhat I, Chow TP
163 - 168	Molecular beam epitaxy of semiconductor nanostructures based on SiC Fissel A
169 - 172	Computer simulation of the early stages of nano scale SiC growth on Si Safonov KL, Trushin YV, Ambacher O, Pezoldt J
173 - 176	Growth of 3C-(Si1-xC1-Y)Gex+y layers on 4H-SiC by molecular beam epitaxy Weih P, Romanus H, Stauden T, Spiess L, Ambacher O, Pezoldt J
177 - 180	Lateral epitaxial overgrowth of 3C-SiC on Si substrates by CVD method Sugishita S, Shoji A, Mukai Y, Nishiguchi T, Michikami K, Issiki T, Ohshima S, Nishino S
181 - 184	Suppression mechanism of double positioning growth in 3C-SiC(111) crystal by using an off-axis Si(110) substrate Nakamura M, Isshiki T, Nishiguchi T, Nishio K, Ohshima S, Nishino S
185 - 188	Influence of substrate roughness on the formation of defects in 3C-SiC grown on Si(110) substrate by hetero-epitaxial CVD method Isshiki T, Nakamura M, Nishiguchi T, Nishio K, Ohshima S, Nishino S
189 - 192	Planar defects, voids and their relationship in 3C-SiC layers Mendez D, Aouni A, Araujo D, Ferro G, Monteil Y, Bustarret E
193 - 196	Suppression of the twin formation in CVD growth of (111) 3C-SiC on (110) Si substrate Nishiguchi T, Nakamura M, Nishio K, Isshiki T, Ohshima S, Nishino S
197 - 200	Regrowth of 3C-SiC on CMP treated 3C-SiC/Si epitaxial layers Mank H, Moisson C, Turover D, Twigg M, Saddow SE
201 - 204	Low temperature chemical vapor deposition of 3C-SiC on Si substrates Forster C, Cimalla V, Ambacher O, Pezoldt J
205 - 208	Challenge to 200 mm 3C-SiC wafers using SOI Nakao M, Iikawa H, Izumi K, Yokoyama T, Kobayashi S
209 - 212	Key radicals for hetero-epitaxial growth of 3C-SiC on silicon substrates Shimizu H, Hisada K, Aoyama Y
213 - 216	Nucleation control in FLASIC assisted short time liquid phase epitaxy by melt modification Pezoldt J, Polychroniadis E, Stauden T, Ecke G, Chassagne T, Vennegues P, Leycuras A, Panknin D, Stoemenos J, Skorupa W
217 - 220	A thermal model for flash lamp annealing of 3C-SiC/Si multi-layer systems (i-FLASiC) Smith M, McMahon RA, Skorupa W, Voelskow M, Stoemenos J
221 - 224	Microstructures in the pendeo epitaxial layer of 3C-SiC on Si substrate Shoji A, Nakamura M, Mitikami K, Isshiki T, Ohshima S, Nishino S
225 - 228	Large area DPB free (111) beta-SiC thick layer grown on (0001) alpha-SIC nominal surfaces by the CF-PVT method Chaussende D, Latu-Romain L, Auvray L, Ucar M, Pons M, Madar R
229 - 232	Comparative evaluation of free-standing 3C-SiC crystals Polychroniadis E, Balloud C, Juillaguet S, Ferro G, Monteil Y, Camassel F, Stoemenos J
233 - 236	Epitaxial SiC formation at the SiO2/Si interface by C+ implantation into SiO2 and subsequent annealing Voelskow M, Panknin D, Polychroniadis EK, Ferro G, Godignion P, Mestres N, Skorupa W, Monteil Y, Stoemenos J
237 - 240	Microfabrication of Si column covered with SiC film for electron emitter Nakata T, Ohshiro Y, Shoji A, Ohshima S, Hayashi Y, Nishino S
241 - 244	Formation of ferromagnetic SiC : Mn phases Syvajarvi A, Nasi L, Yazdi GR, Salviati G, Izadifard M, Buyanova IA, Chen WM, Yakimova R
245 - 248	Two-dimensional model of conjugate heat and mass transport in the isothermal chemical vapour infiltration of 3D-preform by SiC matrix Kulik VI, Kulik AV, Ramm MS, Nilov AS, Bogdanov MV
251 - 256	A short synopsis of the current status of porous SiC and GaN Shishkin Y, Ke Y, Devaty RP, Choyke WJ
257 - 260	Preparation of porous 4H-SiC by surface anodization Chen Y, Shoji S, Sugishita S, Ohshima S, Nishino S
261 - 264	Optical spectroscopy as a tool for observation of porous SiC graphitization Shuman VB, Savkina NS
265 - 268	X-ray diffraction analysis of epigrowth on porous 4H-SiC substrates Shulpina IL, Savkina NS, Shuman VB, Ratnikov VV, Syvajarvi M, Yakimova R
269 - 272	On current limitations in porous SiC applications Mynbaeva M, Lavrent'ev A, Kotousova I, Volkova A, Mynbaev K, Lebedev A
273 - 276	Interface defects in n-type 3C-SiC/SiO2: An EPR study of oxidized porous silicon carbide single crystals von Bardeleben HJ, Cantin JL, Ke L, Shishkin Y, Devaty RP, Choyke WJ
277 - 280	Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC von Bardeleben HJ, Cantin JL, Vickridge IC, Song YW, Dhar S, Feldman LC, Williams JR, Ke L, Shishkin Y, Devaty RP, Choyke WJ
283 - 286	Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability Sakwe SA, Herro ZG, Wellmann PJ
287 - 290	Characterization of SiC thin film obtained by magnetron reactive sputtering : IBA, IR and Raman studies Colder H, Morales M, Rizk R, Vickridge I
291 - 294	RBS-channeling and EPR studies of damage in 2 MeV Al2+-implanted 6H-SiC substrates Morilla A, Lopez JG, Battistig G, Cantin JL, Cheang-Wong JC, von Bardeleben HJ, Respaldiza MA
295 - 298	Microstructural characterization of 3C-SiC thin films grown by flash lamp induced liquid phase epitaxy Ferro G, Panknin B, Polychroniadis EK, Monteil Y, Skorupa W, Stoemenos J
299 - 302	Dynamical study of dislocations and 4H -> 3C transformation induced by stress in (11-20) 4H-SiC Idrissi H, Lancin M, Douin J, Regula G, Pichaud B
303 - 306	Pressure effect on the elastic properties of SiC polytypes Davydov SY
307 - 310	[01-15] grown 6H SiC bulk crystals investigated by high energy triple axis x-ray diffraction Seitz C, Herro ZG, Epelbaum BM, Winnacker A, Hock R, Magerl A
311 - 314	XRDT study of structural defects of 6H-SiC crystals Agrosi G, Fregola RA, Monno A, Scandale E, Tempesta G
315 - 318	Defect characterization of 4H-SiC bulk crystals grown on micropipe filled seed crystals Kato T, Kojima K, Nishizawa SI, Arai K
319 - 322	PVT-growth and characterization of single crystalline 3C-SiC on a (0001) 6H-SiC substrate Polychroniadis E, Mantzari A, Freudenberg A, Wollweber J, Nitschke R, Frank T, Pensl G, Schoner A
323 - 326	Structure of in-grown stacking faults in the 4H-SiC epitaxial layers Izumi S, Tsuchida H, Tawara T, Kamata I, Izumi K
327 - 330	Investigation of stacking fault formation in hydrogen bombarded 4H-SiC Galeckas A, Nielsen HK, Linnros J, Hallen A, Svensson BG, Pirouz P
331 - 334	Intensity ratio of the doublet signature of excitons bound to 3C-SiC stacking faults in a 4H-SiC matrix Camassel J, Juillaguet S
335 - 340	Specific aspects of type II heteropolytype stacking faults in SiC Juillaguet S, Camassel J
341 - 346	Optical characterization of deep level defects in SiC Magnusson B, Janzen E
347 - 350	Optical centres with local vibrational modes created by high temperature annealing of electron irradiated 4H and 6H silicon carbide Steeds JW, Furkert SA, Sullivan W, Hayes JM, Wright NG
351 - 354	Hyperfine interaction of nitrogen donor in 4H-SiC studied by pulsed-ENDOR Son NT, Isoya J, Yamasaki S, Janzen E
355 - 358	Midgap levels in As-grown 4H-SiC epilayers investigated by DLTS Danno K, Kimoto T, Matsunami H
359 - 364	Electronic levels induced by irradiation in 4H-silicon carbide Castaldini A, Cavallini A, Rigutti L, Nava F
365 - 368	Capacitance spectroscopy study of high energy electron irradiated and annealed 4H-SIC Alfieri G, Monakhov EV, Linnarsson MK, Svensson BG
369 - 372	Recombination enhanced defect annealing in 4H-SiC Storasta L, Carlsson FHC, Bergman JP, Janzen E
373 - 376	Room temperature steady state and time resolved PL characterization of ion irradiation induced defects in 6H-SIC Reitano R, Zimbone M, Musumeci P, Baeri P
377 - 380	Comparative study of 4H-SiC irradiated with neutrons and heavy ions Kalinina E, Kholuyanov G, Onushkin G, Davydov D, Strel'chuk A, Konstantinov A, Hallen A, Skuratov V, Kuznetsov A
381 - 384	Optical-capacitance-transient spectroscopy study for deep levels in 4H-SiC epilayer grown by cold wall chemical vapor deposition Kato M, Tanaka S, Ichimura M, Arai E, Nakamura S, Kimoto T
385 - 388	Direct experimental comparison of the effects of electron irradiation on the charge carrier removal rate in n-type silicon and silicon carbide Kozlovski VV, Bogdanova EV, Emtsev VV, Emtsev KV, Lebedev AA, Lomasov VN
389 - 392	Study of ion induced damage in 4H-SiC Lo Giudice A, Olivero P, Fizzotti F, Manfredotti C, Vittone E, Bianco S, Bertuccio G, Casiraghi R, Jaksic M
393 - 396	Micro-optical characterization study of highly p-type doped SiC : Al wafers Wellmann PJ, Mull R, Pons M, Thuaire A, Crisci A, Mermoux M, Auvray L
397 - 400	Improved resolution of epitaxial thin film doping using FTIR reflectance spectroscopy Mazzola MS, Sunkari SG, Mazzola JP, Das H, Melnychuk G, Koshka Y, Wyatt JL, Zhang J
401 - 404	Electrical properties of p-type in-situ doped vs. Al-implanted 4H-SiC Pernot J, Contreras S, Camassel J, Robert JL
405 - 408	Characterization of 4H-SiC epitaxial layers by microwave photoconductivity decay Kumar RJ, Losee PA, Li C, Seiler J, Bhat IB, Chow TP, Borrego JM, Gutmann RJ
409 - 412	Nonequilibrium carrier diffusion and recombination in heavily-doped and semi-insulating bulk HTCVD grown 4H-SiC crystals Storasta L, Aleksiejunas R, Sudzius M, Kadys A, Malinauskas T, Jarasiunas K, Magnusson B, Janzen E
413 - 416	Optical studies of nonequilibrium carrier dynamics in highly excited 4H-SiC epitaxial layers Neimontas K, Aleksiejunas R, Sudzius M, Jarasiunas K, Bergman JP
417 - 420	Comparison of electrically and optically determined minority carrier lifetimes in 6H-SiC Reshanov SA, Pensl G
421 - 424	Electrical characterisation of heavily Al doped 4H-SiC layer grown by vapour-liquid-solid epitaxy in Al-Si melt Godignon P, Jacquier C, Blanque S, Montserrat J, Ferros G, Contreras S, Zielinski M, Monteil Y
425 - 428	Evaluation of on-state resistance and boron-related levels in n-type 4H-SiC Ciechonski RR, Porro S, Syvajarvi M, Yakimova R
429 - 432	Effects of epitaxial layer growth parameters on the defect density and on the electrical characteristics of Schottky diodes La Via F, Roccaforte F, Di Franco S, Ruggiero A, Neri L, Reitano R, Calcagno L, Foti G, Mauceri M, Leone S, Pistone G, Abbondanza G, Abbagnale G, Valente GL, Crippa D
433 - 436	Infrared gratings based on SiC/Si-heterostructures Rockstuhl C, Herzig HP, Forster C, Leycuras A, Ambacher O, Pezoldt J
437 - 440	Characterisation of 4H-SiC pin diodes by micro-Raman scattering and photoemission Thuaire A, Mermoux M, Crisci A, Camara N, Bano E, Baillet F, Pernot E
441 - 444	Hall effect in the channel of 3C-SiC MOSFETs Krieger M, Pensl G, Bakowski M, Schoner A, Nagasawa H, Abe M
445 - 448	Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals Schmitt H, Muller R, Maier M, Winnacker A, Wellmann P
449 - 452	Excitation power dependence of Al-related features in the LTPL spectra of 4H-SiC Zielinski M, Balloud C, Juillaguet S, Boyer B, Souliere V, Camassel J
453 - 456	Concentration of N and P in SIC investigated by time-of-flight secondary ion mass spectrometry (TOF-SIMS) Acarturk T, Semmelroth K, Pensl G, Saddow SE, Starke U
457 - 463	Materials characterization and modeling of SiC in Europe - From the viewpoint of a theorist Deak P
465 - 468	A new model for the D-I-luminescence in 6H-SiC Rauls E, Gerstmann U, Pinheiro MVB, Greulich-Weber S, Spaeth JM
469 - 472	Observation of vacancy clusters in HTCVD grown SiC Aavikko R, Saarinen K, Magnusson B, Janzen E
473 - 476	Electron irradiation induced vacancy defects detected by positron annihilation in 6H-SiC Barthe MF, Henry L, Arpiainen S, Blondiaux G
477 - 480	The VSiCSi(SiCCSi) complex in electron-irradiated 6H-SiC Pinheiro MVB, Rauls E, Gerstmann U, Greulich-Weber S, Spaeth JM
481 - 484	The role of nitrogen in the annealing of vacancies in 4H-SiC Dannefaer S, Avalos V, Yakimova R
485 - 488	Defect evolution in ion irradiated 6H-SiC epitaxial layers Ruggiero A, Zimbone M, Roccaforte F, Libertino S, La Via F, Reitano R, Calcagno L
489 - 492	High-temperature stable multi-defect clusters in neutron irradiated silicon carbide: Electron paramagnetic resonance study Ilyin IV, Muzafarova MV, Mokhov EN, Konnikov SG, Baranov PG
493 - 496	Evolution of defect and hydrogen-related low temperature photoluminescence spectra with annealing for hydrogen or helium implanted 6H SiC Yan F, Devaty RP, Choyke WJ, Gali A, Schmid F, Pensl G, Wagner G
497 - 500	M-center in low-dose proton implanted 4H-SiC; Bistability and change in emission rate Nielsen HK, Hallen A, Martin DM, Svensson BG
501 - 506	Ab initio calculation of shallow defects: Results for P-related donors in SiC Gerstmann U, Rauls E, Overhof H, Frauenheim T
507 - 510	Probing of the wave function of shallow donors and acceptors by EPR in SiC crystals with changed isotopic composition Muzafarova MV, Ilyin IV, Mokhov EN, Baranov PG, Ber BY, Ionov A, Kop'ev PS, Kaliteevskii MA, Godisov ON, Kaliteevskii AK
511 - 514	Effective-mass theory of shallow donors in 4H-SIC Ivanov IG, Stelmach A, Kleverman M, Janzen E
515 - 518	Electron paramagnetic resonance of shallow phosphorous Centers in 4H-and 6H-SiC Son NT, Henry A, Isoya J, Janzen E
519 - 522	Theoretical investigations of complexes of p-type dopants and carbon interstitial in SiC: bistable, negative-U defects Gali A, Hornos T, Deak P, Son NT, Janzen E, Choyke WJ
523 - 526	Ab initio study of dopant ifiterstitials in 4H-SiC Mattausch A, Bockstedte M, Pankratov O
527 - 530	Kinetic aspects of the interstitial-mediated boron diffusion in SiC Bockstedte M, Mattausch A, Pankratov O
531 - 534	3d-transition metals in cubic and hexagonal silicon carbide Machado WVM, Justo JF, Assali LVC
535 - 540	Hydrogen-saturated SiC-surfaces: Model systems for studies of passivation, reconstruction, and interface formation Seyller T
541 - 546	First principles Simulations of SiC-based interfaces Catellani A, Cicero G, Righi MC, Pignedoli CA
547 - 550	Surface band structure studies of Si rich reconstructions on 4H-SiC (1100) Emtsev K, Seyller T, Ley L, Tadich A, Broekman L, Huwald E, Riley JD, Leckey RGC
551 - 554	Electrical characterization of defects in p-type SiC using recombination induced conductivity inversion Krishnan B, Koshka Y
555 - 558	Analysis of SiC islands formation during first steps of Si carbonization process Mendez D, Aouni A, Araujo D, Bustarret E, Ferro G, Monteil Y
559 - 562	ALD deposited Al(2)O3 films on 6H-SiC(0001) after annealing in hydrogen atmosphere Gao KY, Seyller B, Emtsev K, Ley L, Ciobanu F, Pensl G
563 - 568	SiC/SiO2 interface states: Properties and models Afanas'ev VV, Ciobanu F, Dimitrijev S, Pensl G, Stesmans A
569 - 572	The search for near interface oxide traps - First-principles calculations on intrinsic SiO2 defects Knaup JM, Deak P, Gali A, Hajnal Z, Frauenheim T, Choyke JW
573 - 576	Interface states at the SiO2/4H-SiC(0001) interface from first-principles: Effects of Si-Si bonds and of nitrogen atom termination Ohnuma T, Tsuchida H, Jikimoto T, Miyashita A, Yoshikawa M
577 - 580	Structural and electronic properties of Si1-xCxO2 Justo JF, da Silva CRS, Pereyra I, Assali LVC
581 - 584	Surface and interface studies of Si-rich 4H-SiC and SiO2 Virojanadara C, Johansson LI
585 - 588	Characterization of oxide films on SIC epitaxial (000-1) faces by angle-resolved photoemission spectroscopy measurements using synchrotron radiation Hijikata A, Yaguchi B, Yoshida S, Takata Y, Kobayashi K, Shin S, Nohira H, Hattori T
589 - 592	Characterization of SIC passivation using MOS capacitor ultraviolet-induced hysteresis Matocha K, Tucker J, Kaminsky E
593 - 596	Observation of deep level centers in 4H and 6H silicon carbide metal oxide semiconductor field effect transistors Meyer DJ, Dautrich MS, Lenahan PM, Lelis A
599 - 604	Technological aspects of ion implantation in SiC device processes Negoro Y, Kimoto T, Matsunami H
605 - 608	Fabrication of compact ion implanter for silicon carbide devices Mitani S, Yamaguchi S, Furukawa S, Nakata T, Horino Y, Ono R, Hosokawa Y, Miyamoto M, Nishino S
609 - 612	Development of the novel electron bombardment anneal system (EBAS) for SiC post ion implantation anneal Shibagaki M, Kurematsu Y, Watanabe F, Haga S, Miura K, Suzuki T, Satoh M
613 - 616	Aluminium implantation induced linear surface faults in 4H-SiC Wright NG, Vassilevski KV, Nikitina I, Horsfall AB, Johnson CM, Bhatnagar P, Tappin P
617 - 620	Electrical behavior of implanted aluminum and boron near tall region in 4H-SiC after high-temperature annealing Negoro Y, Kimoto T, Matsunami H
621 - 624	Annealing of aluminum implanted 4H-SiC: Comparison of furnace and lamp annealing Rambach M, Bauer AJ, Frey L, Friedrichs P, Ryssel H
625 - 628	Ar annealing at 1600 degrees C and 1650 degrees C of Al+ implanted p(+)/n 4H-SiC diodes: Analysis of the J-V characteristics versus annealing temperature Bergamini F, Moscatelli F, Canino M, Poggi A, Nipoti R
629 - 632	J-v characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C Bergamini A, Rao SP, Saddow SE, Nipoti R
633 - 636	P-type SiC layers formed by VLS induced selective epitaxial growth Lazar M, Jacquier C, Dubois C, Raynaud C, Ferro G, Planson D, Brosselard P, Monteil Y, Chante JP
637 - 640	Ion beam analysis and computer simulation of damage accumulation in nitrogen implanted 6H-SIC: Effects of channeling Zolnai Z, Ster A, Khanh NQ, Kotai E, Posselt MH, Battistig G, Lohner T, Gyulai J
641 - 644	Experimental evidence for an electrically neutral (N-Si)-complex formed during the annealing process of Si+-/N+-co-implanted 4H-SiC Schmid F, Frank T, Pensl G
645 - 648	Homogeneity of nitrogen and phosphorus co-implants in 4H-SiC: Full wafer scale investigation Blanque S, Lyonnet J, Camassel J, Perez R, Terziyska P, Contreras S, Godignon P, Mestres N, Pascual J
649 - 652	n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature Canino M, Castaldini A, Cavallini A, Moscatelli F, Nipoti R, Poggi A
653 - 656	Study of carbon in thermal oxide formed on 4H-SiC by XPS Zhao P, Rusli, Xia JH, Tan CM, Liu Y, Tin CC, Yoon SF, Zhu WG, Ahn J
657 - 660	The role of formation and dissolution of c clusters on the oxygen incorporation during dry thermal oxidation of 6H-SiC Radtke C, Baumvol IJR, Ferrera BC, Stedile FC
661 - 664	Effects of dislocations on reliability of thermal oxides grown on n-type 4H-SiC wafer Senzaki J, Kojima K, Kato T, Shimozato A, Fukuda K
665 - 668	Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC Poggi A, Parisini A, Solmi S, Nipoti R
669 - 672	High temperature rapid thermal oxidation and nitridation of 4H-SiC in diluted N2O and NO ambient Kosugi R, Fukuda K, Arai K
673 - 676	4H-SiC MOS structures fabricated from RTCVD Si layers oxidized in diluted N2O Perez-Tomas A, Tournier D, Godignon P, Mestres N, Millan J
677 - 680	High-reliability ONO gate dielectric for power MOSFETs Tanimoto S, Tanaka H, Hayashi T, Shimoida Y, Hoshi M, Mihara T
681 - 684	An in-situ post growth annealing process for the improvement of 4H-SiC/SiO2 MOS interface prepared by CVD using TEOS, and its characteristic study Ramanujam K, Furuichi H, Taguchi K, Yukumoto S, Nishino S
685 - 688	High temperature NO annealing of deposited SiO2 and SiON films on n-type 4H-SiC Yano H, Hatayama T, Uraoka Y, Fuyuki T
689 - 692	Characteristics of post-nitridation rapid-thermal annealed gate oxide grown on 4H SiC Cheong KY, Bahng W, Kim NK
693 - 696	Low density of interface states in n-type 4H-SiC MOS capacitors achieved by nitrogen implantation Ciobanu F, Pensl G, Afanas'ev VV, Schoner A
697 - 700	Effects of N2O anneal on channel mobility of 4H-SiC MOSFET and gate oxide reliability Fujihira K, Tarui Y, Ohtsuka KI, Imaizumi M, Takami T
701 - 704	Characterization of aluminum and titanium oxides deposited on 4H SiC by atomic layer deposition technique Wolborski M, Bakowski M, Pore V, Ritala M, Leskela M, Schoner A, Hallen A
705 - 708	Electrical properties of aluminum oxide films grown by atomic layer deposition on n-type 4H-SiC Avice M, Grossner U, Monakhov EV, Grillenberger J, Nilsen O, Fjellvag H, Svensson BG
709 - 712	Characterization of 4H-SiC MOS structures with Al2O3 as gate dielectric Paskaleva A, Ciechonski RR, Syvajarvi M, Atanassova E, Yakimova R
713 - 716	4H-SiC MOSFETs using thermal oxidized Ta2Si films as high-k gate dielectric Perez-Tomas A, Godignon P, Mestres N, Montserrat J, Millan J
717 - 720	Characterization of polyimide dielectric layer for the passivation of high electric field and high temperature silicon carbide power devices Zelmat S, Locatelli ML, Lebey T
721 - 724	Improvement in electrical performance of Schottky contacts for high-voltage diode Nakamura T, Miyanagi T, Tsuchida H, Kamata I, Jikimoto T, Izumi K
725 - 728	Surface preparation of 6H-SiC substrates by electron beam annealing Agueev OA, Avdeev SP, Svetlichnyi AM, Konakova RV, Milenin VV, Lytvyn PM, Lytvyn OS, Okhrimenko OB, Soloviev SI, Sudarshan TS
729 - 732	Ion-beam induced modifications of titanium Schottky barrier on 4H-SiC Roccaforte F, Giannazzo F, Bongiorno C, Libertino S, La Via F, Raineri V
733 - 736	Phase formation at rapid thermal annealing of nickel contacts on C-face n-type 4H-SiC. Ferrero S, Albonico A, Meotto UM, Rombola G, Porro S, Giorgis F, Perrone D, Scaltrito L, Bontempi E, Depero LE, Richieri G, Merlin L
737 - 740	Ni-silicide contacts to 6H-SiC: Contact resistivity and barrier height on ion implanted n-type and barrier height on p-type epilayer Moscatelli F, Scorzoni A, Poggi A, Canino M, Nipoti R
741 - 744	Nucleation and reaction of Ag on 4H-SiC(0001) Soubatch S, Starke U
745 - 748	Characterization of electrical contacts on polycrystalline 3C-SiC thin films Castaldini A, Cavallini A, Rossi M, Cocuzza M, Ricciardi C
749 - 752	Effect of the metal composition on the electrical and thermal properties of Au/Pd/Ti/Pd contacts to p-type SiC Kolaklieva L, Kakanakov R, Marinova T, Lepoeva G
753 - 756	Step structures produced by hydrogen etching of initially step-free (0001) 4H-SiC mesas Powell JA, Neudeck PG, Trunek AJ, Abel PB
757 - 760	Reduction of fluoride species and surface roughness by H-2 gas addition in SiC dry etching Mikami H, Horie Y, Hatayama T, Yano H, Uraoka Y, Fuyuki T
761 - 764	Structure and morphology of 4H-SiC wafer surfaces after H-2-Etching Soubatch S, Saddow SE, Rao SP, Lee WY, Konuma M, Starke U
765 - 768	Reactive ion etching induced surface damage of silicon carbide Xia JH, Rusli, Gopalakrishan R, Choy SF, Tin CC, Ahn J, Yoon SF
769 - 772	The reactive neutral beam etching of SiC and its application in p-n junction periphery protection. Sarov G, Cholakova T, Kakanakov R
773 - 776	Forward-bias degradation in 4H-SiC p(+)nn(+) diodes: Influence of the mesa etching Camara N, Thuaire A, Bano E, Zekentes K
777 - 780	Trench formation on ion implanted SiC surface after thermal oxidation Bahng W, Song GH, Kim NK, Kim SC, Kim HW, Seo KS, Kim ED
781 - 784	Metal bonding in SiC based substrates Matko I, Chenevier B, Madar R, Roussel H, Coindeau S, Letertre F, Richtarch C, Di Cioccio L
785 - 790	SiC power device packaging technologies for 300 to 350 degrees C applications Johnson RW, Williams J
793 - 796	Numerical simulation and optimization for 900V 4H-SiC DiMOSFET fabrication Kim SC, Bahng W, Kim NK, Kim ED, Ayalew T, Grasser T, Selberherr S
797 - 800	4H-SiC DMOSFETs for high speed switching applications Ryu SH, Krishnaswami S, Das M, Richmond J, Agarwal A, Palmour J, Scofield J
801 - 804	Realisation of large area 3C-SiC MOSFETs Schoner A, Bakowski M, Ericsson P, Stromberg H, Nagasawa H, Abe M
805 - 808	4H-SiC lateral RESURF MOSFETs on carbon-face substrates Okamoto M, Suzuki S, Kato M, Yatsuo T, Fukuda K
809 - 812	Dose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabrication Kawano H, Kimoto T, Suda J, Matsunami H
813 - 816	Analysis of low on-resistance in 4H-SiC Double-Epitaxial MOSFET Harada S, Okamoto M, Yatsuo T, Fukuda K, Arai K
817 - 820	Low on-resistance in normally-off 4H-SiC accumulation MOSFET Okuno E, Endo T, Matsuki H, Sakakibara T, Tanaka H
821 - 824	Short-Channel Effects in 4H-SiC MOSFETs Noborio M, Kanzaki Y, Suda J, Kimoto T, Matsunami H
825 - 828	Performance of SiC Cascode Switches with Si MOS Gate Brezeanu G, Boianceanu C, Brezeanu M, Mihaila A, Udrea F, Amaratunga G
829 - 832	Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping Hatakeyama T, Watanabe T, Senzaki J, Kato M, Fukuda K, Shinohe T, Arai K
833 - 836	Field Effect Mobility in n-channel Si face 4H-SiC MOSFET with Gate oxide Grown on Aluminium Ion-implanted Material Gudjonsson G, Olafsson HO, Allerstam F, Nilsson PA, Sveinbjornsson EO, Rodle T, Jos R
837 - 840	High Field-Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment Allerstam F, Gudjonsson G, Olafsson HO, Sveinbjornsson EO, Rodle T, Jos R
841 - 844	High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material Sveinbjornsson EO, Olafsson HO, Gudjonsson G, Allerstam F, Nilsson PA, Syvajarvi M, Yakimova R, Hallin C, Rodle T, Jos R
845 - 848	Modeling of lattice site-dependent incomplete ionization in a-SiC devices Ayalew T, Grasser T, Kosina H, Selberherr S
849 - 852	Physical simulation of drain-induced barrier lowering effect in SiC MESFETs Zhu CL, Rusli, Almira J, Tin CC, Yoon SF, Ahn J
853 - 856	High power lateral epitaxy MESFET technology in silicon carbide Konstantinov AO, Harris CI, Ray IC
857 - 860	Broadband RF SiC MESFET power amplifiers Jonsson R, Rudner S
861 - 864	Important Role of Parasitic Regions in Electrical Characteristics of SiC MESFETs Cha HY, Choi YC, Eastman LF, Spencer MG, Ardaravicius L, Matulionis A, Kiprijanovic O
865 - 868	Hole-like Defects in n-Channel 4H-SIC MESFETs Observed by Current Transient Spectroscopy Bluet JM, Gassoumi M, Dermoul I, Chekir F, Maaref H, Guillot G, Morvan E, Dua C, Brylinski C
869 - 872	High-Purity Versus High-Defect-Density Semiinsulating Substrates for SIC MESFET: Simulation of Device Characteristics Koshka Y, Sankin I
873 - 876	Wannier-Stark Localization Effects in 6H-SiC JFETs Sankin VI, Shkrebiy PP, Lebedev AA
877 - 880	Effective edge termination design in SiCVJFET Bhatnagar P, Horsfall AB, Wright NG, O'Neill AG, Vassilevski KV, Johnson CM
881 - 884	Electrical Characteristics Temperature Dependence of 600V-class Deep Implanted Gate Vertical JFET Mizukami M, Takikawa O, Imai S, Kinoshita K, Hatakeyama T, Domon T, Shinohe T
885 - 888	Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs Merrett JN, Williams JR, Cressler JD, Sutton A, Cheng L, Bondarenko V, Sankin I, Seale D, Mazzola MS, Krishnan B, Koshka Y, Casady JB
889 - 892	Current gain of 4H-SiC bipolar transistors including the effect of interface states Domeij M, Danielsson E, Lee HS, Zetterling CM, Ostling M
893 - 896	BVCEO versus BVCBO for 4H and 6H Polytype SiC Bipolar Junction Transistors Balachandran S, Chow TP, Agarwal A, Scozzie S, Jones KA
897 - 900	Electrical characteristics of 4H-SiC BJTs at elevated temperatures Lee HS, Domeij M, Danielsson E, Zetterling CM, Ostling M
901 - 904	1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs Krishnaswami S, Agarwal A, Capell C, Richmond J, Ryu SH, Palmour J, Balachandran S, Chow TP, Bayne S, Geil B, Jones KA, Scozzie C
905 - 908	A 4H-SiC BJT with an epitaxially regrown extrinsic base layer Danielsson E, Domeij M, Lee HS, Zetterling CM, Ostling M, Schoner A, Hallin C
909 - 912	Low and high temperature performance of 600V 4H-SiC epitaxial emitter BJTs Balachandran S, Chow TP, Agarwal A
913 - 916	Optimisation of heterostructure bipolar transistors in SiC Chen CC, Horsfall AB, Wright NG, O'Neill AG
917 - 920	Comparison of high-voltage 4H-SiC insulated-gate bipolar transistor (IGBT) and MOS-gated bipolar transistor (MGT) Zhu L, Balachandran S, Chow TP
921 - 924	Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD) Hatakeyama T, Nishio J, Shinohe T
925 - 928	Influence of overgrown micropipes in the active area of SIC Schottky diodes on long term reliability Rupp R, Treu M, Turkes P, Beermann H, Scherg T, Preis H, Cerva H
929 - 932	Temperature impact on high-current 1.2kV SiC Schottky rectifiers Jorda X, Tournier D, Rebollo J, Millan J, Godignon P
933 - 936	Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights Pierobon R, Meneghesso G, Zanoni E, Roccaforte F, La Via F, Raineri V
937 - 940	Planar Schottky microwave diodes on 4H-SiC Sudow M, Rorsman N, Nilsson PA, Zirath H
941 - 944	Design, Fabrication, and Characterization of 1.5 M Omega cm(2), 800 V 4H-SiC n-type Schottky Barrier Diodes Furno M, Bonani F, Ghione G, Ferrero S, Porro S, Mandracci P, Scaltrito L, Perrone D, Richieri G, Merlin L
945 - 948	Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal Perez R, Mestres N, Tournier D, Jorda X, Vellvehi M, Godignon P
949 - 952	Numerical analysis of SiC merged PiN Schottky diodes Ayalew T, Kim SC, Grasser T, Selberherr S
953 - 956	New high-voltage unipolar mode p(+) Si/n(-) 4H-SiC heterojunction diode Hayashi T, Tanaka H, Shimoida Y, Tanimoto S, Hoshi M
957 - 960	SiC super junction power devices: Modeling and analysis Shen ZJ, Cheng X, Kang B, Ko S, Hshieh I
961 - 964	Electrical characteristics and reliability of 4H-SiC pin diodes fabricated on in-house grown and commercial epitaxial films Losee PA, Li C, Seiler J, Stahlbush RE, Chow TP, Bhat IB, Gutmann RJ
965 - 968	Drift-free, 50 A, 10 kV 4H-SiC PiN diodes with improved device yields Das MK, Sumakeris JJ, Hull BA, Richmond J, Krishnaswami S, Powell AR
969 - 972	8.3 kV 4H-SiC pin diode on (000-1) C-face with small forward voltage degradation Nakayama K, Sugawara Y, Tsuchida H, Miyanagi T, Kamata I, Nakamura T, Asano K, Ishii R
973 - 976	Steady-state and transient characteristics of high-voltage 4H-SiC junction diodes Ivanov PA, Levinshtein ME, Mnatsakanov TT, Palmour JW, Singh R, Irvin KG, Das M
977 - 980	Large area, avalanche-stable 4H-SiC PIN diodes with V-BR > 4.5 kV Peters D, Elpelt R, Schorner R, Dohnke KO, Friedrichs P, Stephani D
981 - 984	Demonstration of high-power X-band oscillation in p(+)/n(-)/n(+) 4H-SiC IMPATT diodes with guard-ring termination Ono S, Arai M, Kimura C
985 - 988	Lifetime control of the minority carrier in PIN diodes by He+ ion implantation Tanaka Y, Kojima K, Takao K, Okamoto M, Kawasaki M, Takatsuka A, Yatsuo T, Arai K
989 - 992	Study of forward voltage drift in diffused SiCPIN diodes doped by Al or B Maximenko S, Soloviev S, Grekov A, Bolotnikov A, Gao Y, Sudarshan TS
993 - 996	Influence of gamma-ray and neutron irradiation on injection characteristics of 4H-SiC pn structures Strel'chuk AM, Kalinina EV, Konstantinov AO, Hallen A
997 - 1000	Investigation of microwave switching 4HSiC p-i-n diodes in the 20 divided by 500 degrees C temperature range Boltovets MS, Basanets VV, Camara N, Krivutsa VA, Zekentes K
1001 - 1004	Influence of irradiation on excess currents in SiC pn structures Stre'chuk AM, Kozlovski VV, Lebedev AA, Smirnova NY
1005 - 1008	A 3.5 kV thyristor in 4H-SiC with a JTE periphery Brosselard P, Bouchet T, Planson D, Scharnholz S, Paques G, Lazar M, Raynaud C, Chante JP, Spahn E
1009 - 1014	SiC materials and technologies for sensors development Godignon P
1015 - 1019	Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors Bertuccio G, Binetti S, Caccia S, Casiraghi R, Castaldini A, Cavallini A, Lanzieri C, Le Donne A, Nava F, Pizzini S, Rigutti L, Verzellesi G, Vittone E
1021 - 1024	Measurements of charge collection efficiency of p(+)/n junction SiC detectors Moscatelli F, Scorzoni A, Poggi A, Bruzzi M, Lagomarsino S, Mersi S, Sciortino S, Lazar M, Di Placido A, Nipoti R
1025 - 1028	Investigation of the SiC transistor and diode nuclear detectors at 8 MeV proton irradiation Strokan NB, Ivanov AM, Savkina NS, Lebedev AA, Kozlovski VV, Syvajarvi M, Yakimova R
1029 - 1032	High energy resolution detectors based on 4H-SiC. Ivanov A, Kalinina E, Kholuyanov G, Strokan N, Onushkin G, Konstantinov A, Hallen A, Kuznetsov A
1033 - 1036	High temperature hydrocarbon sensing with Pt-thin Ga2O3-SiC diodes Trinchi A, Wlodarski W, Faglia G, Ponzoni A, Comini E, Sberveglieri G
1039 - 1042	Modeling of photon recycling in GaN-devices Velmre E, Udal A, Klopov M
1043 - 1046	Nickel-vacancy complexes in diamond: An ab-initio investigation Assali LVC, Larico R, Machado WVM, Justo JF
1047 - 1050	Manganese impurity in boron nitride and gallium nitride Assali LVC, Machado WVM, Justo JF
1051 - 1056	Heteroepitaxy of GaN on silicon: In situ measurements Krost A, Dadgar A, Schulze F, Clos R, Haberland K, Zettler T
1057 - 1060	Structure and energy of the 90 degrees partial dislocations in Wurtzite-GaN Savini G, Heggie MI, Ewels CP, Martsinovich N, Jones R, Blumenau AT
1061 - 1064	High temperature contacts to GaN and SiC based on TiBx nanostructure layers Boltovets MS, Ivanov VN, Avksentyev AY, Belyaev AE, Borisenko AG, Fedorovitsh OA, Konakova RV, Kudryk YY, Lytvyn PM, Milenin VV, Sachenko AV, Sveschnikov YN
1065 - 1068	Microscopic spatial distribution of bound excitons in high-quality ZnO Bertram F, Forster D, Christen J, Oleynik N, Dadgar A, Krost A