Materials Science Forum

Materials Science Forum, Vol.353-356 Entire volume, number list

ISSN: 0255-5476 (Print)

In this Issue (194 articles)

3 - 6	Large diameter, low defect silicon carbide boule growth Carter CH, Glass R, Brady M, Malta D, Henshall D, Muller S, Tsvetkov V, Hobgood D, Powell A
7 - 10	SiC single crystal growth by sublimation: Experimental and numerical results Moulin C, Pons M, Pisch A, Grosse P, Faure C, Basset A, Basset G, Passero A, Billon T, Pelissier B, Anikin M, Pernot E, Pernot-Rejmankova P, Madar R
11 - 14	Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process Wellmann PJ, Hofmann D, Kadinski L, Selder M, Straubinger TL, Winnacker A
15 - 19	Defect reduction in sublimation grown silicon carbide crystals by adjustment of thermal boundary conditions Schmitt E, Rasp M, Weber AD, Kolbl M, Eckstein R, Kadinski L, Selder M
21 - 24	Progress in 4H-SiC bulk growth Anikin M, Pernot E, Pelissier B, Pons M, Pisch A, Bernard C, Billon T, Faure C, Moulin C, Madar R
25 - 28	Stability criteria for 4H-SiC bulk growth Straubinger TL, Bickermann M, Hofmann D, Weingartner R, Wellmann PJ, Winnacker A
29 - 32	Growth related distribution of secondary phase inclusions in 6H-SiC single crystals Rost HJ, Dolle J, Doerschel J, Siche D, Schulz D, Wollweber J
33 - 36	Investigation of a PVT SiC-growth set-up modified by an additional gas flow Straubinger TL, Wellmann PJ, Winnacker A
37 - 40	Mass transport and powder source evolution in sublimation growth of SiC bulk crystals Karpov DS, Bord OV, Karpov SY, Zhmakin AI, Ramm MS, Makarov YN
41 - 44	Some aspects of sublimation growth of SiC ingots Avramenko SF, Kiselev VS, Valakh MY, Yukhimchuk VA
45 - 48	Growth of highly aluminum-doped p-type 6H-SiC single crystals by the modified Lely method Schulze N, Gajowski J, Semmelroth K, Laube M, Pensl G
49 - 52	Study of boron incorporation during PVT growth of p-type SiC crystals Bickermann M, Hofmann D, Rasp M, Straubinger TL, Weingartner R, Wellmann PJ, Winnacker A
53 - 56	Features of semi-insulating SiC single-crystal growth by physical vapor transport Reshanov SA, Rastegaev VP, Tairov YM
57 - 60	Virtual reactor: A new tool for SiC bulk crystal growth study and optimization Bogdanov MV, Bord OV, Galyukov AO, Karpov SY, Kulik AV, Kochuguev SK, Komissarov AE, Ofengeim DK, Serkov AM, Tsiryulnikov AV, Zhmakin IA, Ramm MS, Zhmakin AI, Makarov YN
61 - 64	Coupled thermodynamic - Mass transfer modeling of the SiC boule growth by the PVT method Pisch A, Blanquet E, Pons M, Bernard C, Dedulle JM, Madar R
65 - 68	Numerical simulation of thermal stress formation during PVT-growth of SiC bulk crystals Selder M, Kadinski L, Durst F, Straubinger TL, Wellmann PJ, Hofmann D
69 - 72	Crystal growth of 15R-SiC and various polytype substrates Nishiguchi T, Shimizu T, Sasaki M, Ohshima S, Nishino S
73 - 76	Micropipe filling by the sublimation close space technique Furusho T, Ohshima S, Nishino S
77 - 80	Mechanism for damage healing of cracked 6H-SiC substrates by the sublimation method Shimizu T, Nishiguchi T, Sasaki M, Ohshima S, Nishino S
81 - 84	Chemical vapor deposition of SiC by the temperature oscillation method Abe Y
85 - 88	Aluminium-silicon as a melt for the low temperature growth of SiC crystals Chaussende D, Jacquier C, Ferro G, Viala JC, Cauwet F, Monteil Y
91 - 94	Epitaxial growth of 4H-SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations Zhang J, Ellison A, Danielsson O, Henry A, Janzen E
95 - 98	Influence of the growth conditions on the layer parameters of 4H-SiC epilayers grown in a hot-wall reactor Wagner G, Irmscher K
99 - 102	Enlarging the usable growth area in a hot-wall silicon carbide CVD reader by using simulation Danielsson O, Forsberg U, Henry A, Janzen E
103 - 106	Modeling analysis of SiCCVD in a planetary reactor Vorob'ev AN, Semennikov AK, Zhmakin AI, Makarov YN, Dauelsberg M, Wischmeyer F, Heuken M, Jurgensen H
107 - 110	Influence of silicon gas-to-particle conversion on SiCCVD in a cold-wall rotating-disc reactor Vorob'ev AN, Bogdanov MV, Komissarov AE, Karpov SY, Bord OV, Lovtsus AA, Makarov YN
111 - 114	Ab initio study of silicon carbide: Bulk and surface structures Raffy C, Magaud L, Blanquet E, Pons M, Pasturel A
115 - 118	SiC defect density reduction by epitaxy on porous surfaces Saddow SE, Mynbaeva M, Choyke WJ, Devaty RP, Bai S, Melnychuck G, Koshka Y, Dmitriev V, Wood CEC
119 - 122	Effect of sublimation growth on the structure of porous silicon carbide: SEM and X-ray diffraction investigations Savkina NS, Ratnikov VV, Shuman VB, Lebedev AA
123 - 126	Gaseous etching effects on homoepitaxial growth of SiC on hemispherical substrates using CVD Nishino S, Masuda Y, Ohshima S, Jacob C
127 - 130	Low temperature selective and lateral epitaxial growth of silicon carbide on patterned silicon substrates Jacob C, Pirouz P, Nishino S
131 - 134	Characterization of 4H-SiC epilayers grown at a high deposition rate Tsuchida H, Tsuji T, Kamata I, Jikimoto T, Fujisawa H, Ogino S, Izumi K
135 - 138	Control of surface morphologies for epitaxial growth on low off-anglie 4H-SiC (0001) substrates Masahara K, Kushibe M, Ohno H, Kojima K, Takahashi T, Ishida Y, Suzuki T, Tanaka T, Yoshida S, Arai K
139 - 142	Surface Morphology of 4H-SiC inclined towards < 1100 > and < 1120 > grown by APCVD using the Si(2)Cl(6)+C(3)H(8) system Masuda Y, Ohshima S, Jacob C, Nishino S
143 - 146	Growth of 3C-SiC using off-oriented 6H-SiC substrates Syvajarvi M, Yakimova R, Jacobsson H, Janzen E
147 - 150	SiC polytype transformation on the growth surface Mokhov EN, Obyden SK, Roenkovi AD, Saparin GV, Vodakov YA
151 - 154	Improvement of the 3C-SiC/Si interface by flash lamp annealing Panknin D, Stoemenos J, Eickhoff M, Heera V, Vouroutzis N, Krotz G, Skorupa W
155 - 158	How to grow unstrained 3C-SiC heteroepitaxial layers on Si (100) substrates Chassagne T, Ferro G, Gourbeyre C, Le Berre M, Barbier D, Monteil Y
159 - 162	Growth of 3C-SiC on si by low temperature CVD Cloitre T, Moreaud N, Vicente P, Sadowski ML, Aulombard RL
163 - 166	Growth of SiC on Si(100) by low-pressure MOVPE Bakin AS, Ivanov AA, Piester D, Riedl T, Hitzel F, Wehmann HH, Schlachetzki A
167 - 170	The microstructure and surface morphology of thin 3C-SiC films grown on (100) Si substrates using an APCVD-based carbonization process Wu CH, Chung J, Hong MH, Zorman CA, Pirouz P, Mehregany M
171 - 174	A comparison of SiO(2) and Si(3)N(4) masks for selective epitaxial growth of 3C-SiC films on Si Wu CH, Chung J, Hong MH, Zorman CA, Pirouz P, Mehregany M
175 - 178	Selective deposition of 3C-SiC epitaxially grown on SOI subtrates Eickhoff M, Zappe S, Nielsen A, Krotz G, Obermeier E, Vouroutzis N, Stoemenos J
179 - 182	Carbonization induced change of polarity for MBE grown 3C-SiC/Si(111) Pezoldt J, Schroter B, Cimalla V, Stauden T, Goldhahn R, Romanus H, Spiess L
183 - 186	The influence of Ge on the SiC nucleation on (111)Si surfaces Pezoldt J, Wohner T, Stauden T, Schaefer JA, Masri P
187 - 190	In situ RHEED studies on the influence of Ge on the early stages of SiC on Si(111) and (100) surfaces Cimalla V, Zekentes K, Tsagstraki K, Stauden T, Scharmann F, Pezoldt J
191 - 194	Structural and optical properties of SiC films deposited on Si by DG magnetron sputtering Lei YM, Yu YH, Cheng LL, Lin L, Sundaraval B, Luo EZ, Lin S, Ren CX, Cheung WY, Wong SP, Xu JB, Zou SC, Wilson IH
195 - 198	Laser crystallization of amorphous SiC thin films on glass Urban S, Falk F
199 - 202	TEM investigation of Si implanted natural diamond Pecz B, Barna A, Heera V, Fontaine F, Skorupa W
205 - 210	Surface reconstruction on SiC(0001) and SiC(0001): Atomic structure and potential application for oxidation, stacking and growth Starke U
211 - 214	Interplay of surface structure, band stacking and heteropolytypic growth of SiC Grossner U, Fissel A, Furthmuller J, Richter W, Bechstedt F
215 - 218	Room temperature initial oxidation of 6H-and 4H-SiC(0001) 3x3 Amy F, Hwu Y, Brylinski C, Soukiassian P
219 - 222	Comparison of HF and ozone treated SiC surfaces Mikalo RP, Hoffmann P, Batchelor DR, Lloyd-Spetz A, Lundstrom I, Schmeisser D
223 - 226	Preparation and characterization of hydrogen terminated 6H-SiC Sieber N, Seyller T, Mantel BF, Ristein J, Ley L
227 - 230	Polytype and polarity of silicon carbide and aluminium nitride films growing by MBE: A nondestructive identification Schroter B, Winkelmann A, Fissel A, Lebedev V, Richter W
231 - 234	Surface abstraction reactions at experimental temperatures; A theoretical study of 4H-SiC(0001) Olander J, Larsson K
235 - 238	Combined scanning tunneling microscopy and photoemission studies of the beta-SiC(100) c(4x2) surface reconstruction Derycke V, Fonteneau P, Aristov VY, Enriquez H, Soukiassian P
239 - 242	Investigation of the SiC surface after nitrogen plasma treatment Bereznjakova LA, Shchukarev AV, Ivanov-Omskii VI
243 - 246	Morphology of sublimation grown 6H-SiC(0001) surfaces Schulz D, Dolle J, Rost HJ, Siche D, Wollweber J
247 - 250	Germanium an SiC(0001): Surface structure and nanocrystals Schroter B, Komlev K, Kaiser U, Hess G, Kipshidze G, Richter W
251 - 254	Origin of the excellent thermal stability of Al/Si-based ohmic contacts to p-type LPE 4H-SiC Kassamakova L, Kakanakov R, Kassamakov I, Zekentes K, Tsagaraki K, Atanasova G
255 - 258	Ion-irradiation effect on the Ni/SiC interface reaction Roccaforte F, Calcagno L, Musumeci P, La Via F
259 - 262	Analysis of strain and defect formation in low-dimensional structures in SiC Kaiser U, Saitoh K, Chuvilin A
263 - 266	Source material related distribution of defects in 6H-SiC single crystals Rost HJ, Siche D, Dolle J, Schulz D, Wollweber J
267 - 270	Characterization of 2 inch SiC wafers made by the sublimation method Sasaki M, Shiomi H, Nishino S
271 - 274	Ion bombardment induced damage in silicon carbide studied by ion beam analytical methods Szilagyi E, Khanh NQ, Horvath ZE, Lohner T, Battistig G, Zolnai Z, Kotai E, Gyulai J
275 - 278	Effects of hydrogen implantation and annealing on the vibrational properties of 6H-SiC Kunert HW, Maurice TP, Hauser T, Malherbe JB, Prinsloo LC, Brink DJ, Falkovsky LA, Camassel J
279 - 282	4H-and 6H-SiC Rutherford back scattering-channeling spectrometry: polytype finger printing Nipoti R, Carnera A
283 - 286	X-ray diffraction, micro-Raman and birefringence imaging of silicon carbide Pernot E, Mermoux M, Kreisel J, Chaix-Pluchery O, Pernot-Rejmankova P, Anikin M, Pelissier B, Glazer AM, Madar R
287 - 290	X-ray diffraction line profile analysis of neutron irradiated 6H-SiC Seitz C, Magerl A, Heissenstein H, Helbig R
291 - 294	High-resolution XRD evaluation of thick 4H-SiC epitaxial layers Jacobsson H, Yakimova R, Syvajarvi M, Birch J, Tuomi T, Janzen E
295 - 298	Defect analysis of SiC sublimation growth by the in-situ X-ray topography Kato T, Oyanagi N, Yamaguchi H, Nishizawa S, Arai K
299 - 302	Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes Bergman JP, Lendenmann H, Nilsson PA, Lindefelt U, Skytt P
303 - 306	A simple non-destructive technique to detect micropipes in silicon carbide Morrison DJ, Keir A, Preston IH, Hilton KP, Uren MJ, Johnson CM
307 - 310	Micropipe and macrodefect healing in SiC crystals during liquid phase processing Epelbaum BM, Hofmann D, Hecht U, Winnacker A
311 - 314	Micropipe closing via thick 4H-SiC epitaxial growth involving structural transformation of screw dislocations Kamata I, Tsuchida H, Jikimoto T, Izumi K
315 - 318	Growth evolution of dislocation loops in ion implanted 4H-SiC Persson POA, Hultman L
319 - 322	Lattice parameter measurements of 3C-SiC thin films grown on 6H-SiC(0001) substrate crystals Krausslich J, Bauer A, Wunderlich B, Goetz K
323 - 326	Self diffusion in SiC: the role of intrinsic point defects Mattausch A, Bockstedte M, Pankratov O
327 - 330	Modeling of boron diffusion in silicon carbide Bracht H, Stolwijk NA, Laube M, Pensl G
331 - 334	Quantitative modeling of hydrogen diffusion and reactivation of H-passivated Al-acceptors in SiC Hulsen C, Achtziger N, Herold J, Witthuhn W
335 - 340	Optical characterization of SiC materials: Bulk and implanted layers Camassel J, Vicente P, Falkovski LA
341 - 344	Line broadening of phonons in the Raman spectra of isotopically disordered SiC Rohmfeld S, Hundhausen M, Ley L, Schulze N, Pensl G
345 - 348	Micro-Raman and photoluminescence study on n-type 6H-SiC Feng ZC, Chua SJ, Evans GA, Steeds JW, Williams KPJ, Pitt GD
349 - 352	Low-frequency vibrational spectroscopy in SiC polytypes Pajot B, Fall CJ, Cantin JL, von Bardeleben HJ, Jones R, Briddon PR, Gendron F
353 - 356	Free carrier diffusion in 4H-SiC Grivickas P, Martinez A, Mikulskas I, Grivickas V, Tomasiunas R, Linnros J, Lindefelt U
357 - 360	Valence sand splittings of 15R SiC measured using wavelength modulated absorption spectroscopy Devaty RP, Bai S, Choyke WJ, Hobgood D, Larkin DJ
361 - 364	Zeeman effect of D(1) bound exciton in 4H-SiC Chen CQ, Helbig R, Winkler R, Wysmolek A, Potemski M
365 - 368	As-grown and process-induced intrinsic deep-level luminescence in 4H SiC Magnusson B, Ellison A, Carlsson FHC, Son NT, Janzen E
369 - 372	Characterization of SiC : P prepared by nuclear transmutation due to neutrons Heissenstein H, Helbig R
373 - 376	Presence of hydrogen in SiC Henry A, Magnusson B, Linnarsson MK, Ellison A, Syvajarvi M, Yakimova R, Janzen E
377 - 380	Investigation of an ion-implantation induced high temperature persistent intrinsic defect in SiC Sridhara SG, Carlsson FHC, Bergman JP, Henry A, Janzen E
381 - 384	Differentiation between C and Si related damage centres in 4H and 6H SiC by the use of 90-300 kV electron irradiation followed by low temperature photoluminescence microscopy Steeds JW, Carosella F, Evans GA, Ismail MM, Danks LR, Voegeli W
385 - 388	Infrared investigation of implantation damage and implantation damage annealing in 4H-SiC Pernot J, Bluet JM, Camassel J, Di Cioccio L
389 - 392	Investigation of electroluminescence across 4H-SiC p(+)/n(-)/n(+) structures using optical emission microscopy Galeckas A, Linnros J, Breitholtz B, Bleichner H
393 - 396	Defects characterization in SiC by scanning photoluminescence spectroscopy Masarotto L, Bluet JM, Berenguer M, Girard P, Guillot G
397 - 400	Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiC Weingartner R, Bickermann M, Hofmann D, Rasp M, Straubinger TL, Wellmann PJ, Winnacker A
401 - 404	Low temperature photoluminescence processes of (13)C enriched 6H-and 15R-SiC crystals grown by the modified Lely method Sadowski H, Schulze N, Frank T, Laube M, Pensl G, Helbig R
405 - 408	Intrinsic photoconductivity of 6H-SiC and the free-exciton binding energy Ivanov IG, Egilsson T, Zhang J, Ellison A, Janzen E
409 - 412	Epitaxial growth and properties of SiC layers grown on alpha-SiC(0001) by solid-source MBE: A photoluminescence study Fissel A, Richter W
413 - 416	Prediction of optical properties of Si and Ge dots in SiC Weissker HC, Furthmuller J, Bechstedt F
417 - 420	Investigation of variable incidence angle spectroscopic ellipsometry for determination of below band gap uniaxial dielectric function Kildemo M, Hunderi O
421 - 426	Theory of hydrogen in silicon carbide Deak P, Gali A, Aradi B
427 - 430	Dissociation energy of the passivating hydrogen-aluminum complex in 4H-SiC Janson MS, Hallen A, Linnarsson MK, Nordell N, Karlsson S, Svensson BG
431 - 434	Proton irradiation induced defects in 4H-SiC Storasta L, Carlsson FHC, Sridhara SG, Aberg D, Bergman JP, Hallen A, Janzen E
435 - 438	Intrinsic defect complexes in alpha-SiC: the formation of antisite Pairs Rauls E, Hajnal Z, Gali A, Deak P, Frauenheim T
439 - 442	Generation and annihilation of intrinsic-related defect centers in 4H/6H-SiC Frank T, Weidner M, Itoh H, Pensl G
443 - 446	Implantation temperature dependent deep level defects in 4H-SiC Aberg D, Storasta L, Hallen A, Svensson BG
447 - 450	Boron in SiC: Structure and kinetics Bockstedte M, Mattausch A, Pankratov O
451 - 454	Deep Level investigation of pn-junctions formed by MeV aluminum and boron implantation into 4H-SiC Schoner A, Miyamoto N, Kimoto T, Matsunami H
455 - 458	Boron centers in 4H-SiC Aradi B, Gali A, Deak P, Rauls E, Frauenheim T, Son NT
459 - 462	Oxygen-related defect centers observed in 4H/6H-SiC epitaxial layers grown under CO(2) ambient Klettke O, Pensl G, Kimoto T, Matsunami H
463 - 466	Electrical activity of isolated oxygen defects in SiC Gali A, Heringer D, Hajnal Z, Frauenheim T, Choyke WJ
467 - 470	Beryllium-related defect centers in 4H-SiC Krieger M, Laube M, Weidner M, Pensl G
471 - 474	Band gap states of Cr in the lower part of the SiC band gap Pasold G, Achtziger N, Grillenberger J, Witthuhn W
475 - 478	Tantalum and tungsten in silicon carbide: Identification and polytype dependence of deep levels Grillenberger J, Achtziger N, Pasold G, Sielemann R, Witthuhn W
479 - 482	Shallow dopant and surface levels in 6H-SiC MOS structures studied by thermally stimulated current technique Lysenko VS, Osiyuk IP, Rudenko TE, Tyagulski IP, Sveinbjornsson EO, Olafsson HO
483 - 486	Intrinsic mobility of conduction electrons in 4H-SiC Pernot J, Contreras S, Neyret E, Di Cioccio L, Zawadzki W, Robert JL
487 - 490	A study of band to band tunneling with application to high-field transport in hexagonal SiC polytypes Martinez A, Nilsson HE, Lindefelt U
491 - 494	Thermopower measurements in 4H-SiC and theoretical calculations considering the phonon drag effect Grivickas V, Stolzer M, Velmre E, Udal A, Grivickas P, Syvajarvi M, Yakimova R, Bikbajevas V
495 - 498	Donor densities and donor energy levels in 3C-SiC determined by a new method based on Hall-effect measurements Matsuura H, Masuda Y, Chen Y, Nishino S
499 - 504	Intrinsic defects in silicon carbide polytypes Son NT, Hai PN, Janzen E
505 - 508	Radiation-induced pair defects in 6H-SiC studied by optically detected magnetic resonance Lingner T, Greulich-Weber S, Spaeth JM
509 - 512	Intrinsic defects in 6H-SiC generated by electron irradiation at the silicon displacement threshold von Bardeleben HJ, Cantin JL, Baranov P, Mokhov EN
513 - 516	EPR study of proton implantation induced intrinsic defects in 6H-and 4H-SiC von Bardeleben HJ, Cantin JL
517 - 520	EPR study of carbon vacancy-related defects in electron-irradiated 6H-SiC Bratus VY, Makeeva IN, Okulov SM, Petrenko TL, Petrenko TT, von Bardeleben HJ
521 - 524	EPR of deep Al and deep B in heavily Al-doped as grown 4H-SiC Ilyin IV, Mokhov EN, Baranov PG
525 - 528	The electronic structure of the N donor center in 4H-SiC and 6H-SiC van Duijn-Arnold A, Zondervan R, Baranov PG, Mokhov EN, Schmidt J
529 - 532	Identification of iron and nickel in 6H-SiC by electron paramagnetic resonance Baranov PG, Ilyin IV, Mokhov EN, Khramtsov VA
533 - 536	Calculated positron annihilation parameters for defects in SiC Staab TEM, Torpo LM, Puska MJ, Nieminen RM
537 - 540	Annealing process of defects in epitaxial SiC induced by He and electron irradiation: Positron annihilation study Kawasuso A, Redmann F, Krause-Rehberg R, Sperr P, Frank T, Weidner M, Pensl G, Itoh H
543 - 548	Recent progress in SiC epitaxial growth and device processing technology Kimoto T, Yano H, Tamura S, Miyamoto N, Fujihira K, Negoro Y, Matsunami H
549 - 554	Doping of silicon carbide by ion implantation Svensson BG, Hallen A, Linnarsson MK, Kuznetsov AY, Janson MS, Aberg D, Osterman J, Persson POA, Hultman L, Storasta L, Carlsson FHC, Bergman JP, Jagadish C, Morvan E
555 - 558	Neutron irradiation of 4H SiC Carlsson FHC, Storasta L, Magnusson B, Berman JP, Skold K, Janzen E
559 - 562	Techniques for depth profiling of dopants in 4H-SiC Osterman J, Hallen A, Anand S, Linnarsson MK, Andersson H, Aberg D, Panknin D, Skorupa W
563 - 566	Growth of delta-doped SiC epitaxial layers Karlsson S, Adas C, Konstantinov A, Linnarsson MK
567 - 570	Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor Ortolland S, Wright NG, Johnson CM, Knights AP, Coleman PG, Burrows CP, Pidduck AJ
571 - 574	High electrical activation of aluminium and nitrogen implanted in 6H-SiC at room temperature by RF annealing Lazar M, Ottaviani L, Locatelli ML, Raynaud C, Planson D, Morvan E, Godignon P, Skorupa W, Chantel JP
575 - 578	Enhancement of electrical activation of aluminum accepters in 6H-SiC by co-implantation of carbon ions Ohshima T, Itoh H, Yoshikawa M
579 - 582	High dose implantation in 6H-SiC Heera V, Skorupa W, Stoemenos J, Pecz B
583 - 586	Precipitate formation in heavily Al-doped 4H-SiC layers Linnarsson MK, Persson POA, Bleichner H, Janson MS, Zimmermann U, Andersson H, Karlsson S, Yakimova R, Hultman L, Svensson BG
587 - 590	Flash lamp annealing of implantation doped p- and n-type 6H-SiC Panknin D, Gebel T, Skorupa W
591 - 594	Structural and electrical characterization of ion beam synthesized and n-doped SiC layers Serre C, Panknin D, Perez-Rodriguez A, Romano-Rodriguez A, Morante Jr, Kogler R, Skorupa W, Esteve J, Acero MC
595 - 598	Channeling measurements of ion implantation damage in 4H-SiC Kuznetsov AY, Janson MS, Hallen A, Svensson BG, Jagadish C, Grunleitner H, Pensl G
599 - 602	The Monte Carlo binary collision approximation applied to the simulation of the ion implantation process in single crystal SiC: High dose effects Lulli G, Albertazzi E, Nipoti R, Bianconi M, Carnera A
603 - 606	Formation of large area Al contacts on 6H-and 4H-SiC substrates Korolkov O, Rang T
607 - 610	Ru Schottky barrier contacts to n- and p-type 6H-SiC Samiji ME, van Wyk E, Wu L, Venter A, Leitch AWR
611 - 614	Stability of molybdenum Schottky contact to silicon carbide Nishikawa K, Shimizu M, Foster B, Iwakuro H
615 - 618	Effects of thermal annealing on Cu/6H-SiC Schottky properties Hatayama T, Suezaki T, Kawahito K, Uraoka Y, Fuyuki T
619 - 622	Electrochemical characterization of p-type hexagonal SiC Kayambaki M, Zekentes K, Tsagaraki K, Pernot E, Yakimova R
623 - 625	A novel technique for shallow angle beveling of SiC to prevent surface breakdown in power devices Merrett JN, Sheridan DC, Williams Jr, Tin CC, Cressler JD
627 - 630	Interface states of SiO(2)/SiC on (11(2)over-bar-0) and (0001) Si faces Yano N, Kimoto T, Matsunami H
631 - 634	Interface properties of MOS structures formed on 4H-SiC C(0001) face Fukuda K, Suzuki S, Senzaki J, Cho WJ, Tanaka T, Arai K
635 - 638	Steam annealing effects on CV characteristics of MOS structures on (11(2)over-bar-0) face of 4H-SiC Yoshikawa M, Ohshima T, Itoh H, Takahashi K, Kitabatake M
639 - 642	Role of H(2) in low temperature post-oxidation anneal for gate oxide on 6H-SiC Raineri V, Lombardo S, Musumeci P, Maktari AM, Calcagno L
643 - 646	Influence of the post-oxidation process on the MOS interface and MOSFETs properties Suzuki S, Cho WJ, Kosugi R, Senzaki J, Harada S, Fukuda K
647 - 650	Observation of SiO(2)/SiC interface with different off-angle from Si(0001) face using transmission electron microscopy Fukuda K, Suzuki S, Senzaki J, Kosugi R, Tanaka T, Arai K
651 - 654	Remote PECVD oxide utilized in U-MOS structures and different MOSFETs on SiC Scharnholz S, Hellmund O, Stein J, Spangenberg B, Kurz H
655 - 658	Indications for nitrogen-assisted removal of carbon from SiO(2)-SiC interface Jamet P, Dimitrijev S, Tanner P
659 - 662	Dissolution mechanism of the carbon islands at the SiO(2)-SiC interface Krafcsik OH, Josepovits KV, Deak P
663 - 666	Dependence of wet oxidation on the defect density in 3C-SiC Eickhoff M, Vouroutzis N, Nielsen A, Krotz G, Stoemenos J
669 - 674	SiC microwave power devices Morvan E, Noblanc O, Dua C, Brylinski C
675 - 678	1700 V SiC Schottky diodes scaled to 25 A Peters D, Dohnke KO, Hecht C, Stephani D
679 - 682	Temperature dependence of forward and reverse characteristics of Ti, W, Ta and Ni Schottky diodes on 4H-SiC Treu M, Rupp R, Kapels H, Bartsch W
683 - 686	A high performance JBS rectifier - design considerations Dahlquist F, Lendenmann H, Ostling M
687 - 690	Design and characterization of 2.5kV 4H-SiC JBS rectifiers with self-aligned guard ring termination Sheridan DC, Merrett JN, Cressler JD, Saddow SE, Williams Jr, Ellis CE, Niu G
691 - 694	Improvements in the electrical performance of high voltage 4H-SiC Schottky diodes by hydrogen annealing Wahab Q, Macak EB, Zhang J, Madsen LD, Janzen E
695 - 698	Influence of the buried p-layer on the blocking behavior of vertical JFETs in 4H-SiC Friedrichs P, Mitlehner H, Schorner R, Kaltschmidt R, Dohnke KO, Stephani D
699 - 702	A comparison between physical simulations and experiment results in 4H-SiC MESFETs with non-constant doping in the channel and buffer layers Eriksson J, Rorsman N, Zirath H, Jonsson R, Wahab Q, Rudner S
703 - 706	Noise behavior of 4H-SiC MESFETs at low drain voltage Banc C, Royet AS, Ouisse T, Bano E, Noblanc O, Brylinski C
707 - 710	Double implanted power MESFET technology in 4H-SiC Horsfall AB, Ortolland S, Wright NG, Johnson CM, Knights AP
711 - 714	Source resistance analysis of SiC-MESFET Arai M, Ogata M, Honda H, Sawazaki H, Nakagawa A, Kitamura M
715 - 718	Design and implementation of RESURF MOSFETs in 4H-SiC Banerjee S, Chatty K, Chow TP, Gutmann RJ
719 - 722	Comparison of super-junction structures in 4H-SiC and Si for high voltage applications Adachi K, Johnson CM, Ohashi H, Shinohe T, Kinoshita K, Arai K
723 - 726	SiC junction control, an alternative to MOS control high voltage switching devices Mihaila A, Udrea F, Brezeanu G, Azar R, Amaratunga G
727 - 730	Long term operation of 4.5kV PiN and 2.5kV JBS diodes Lendenmann H, Dahlquist F, Johansson N, Soderholm R, Nilsson PA, Bergman JP, Skytt P
731 - 734	Planar p-n diodes fabricated by MeV-energy and high-temperature selective implantation of aluminum to 4H-SiC Sugimoto H, Kinouchi S, Tarui Y, Imaizumi M, Ohtsuka K, Takami T, Ozeki T
735 - 738	Silicon carbide Zener diodes Vassilevski K, Zekentes K, Bogdanova EV, Lagadas M, Zorenko A
739 - 742	Characteristics of epitaxial and implanted N-base 4H-SiC GTO thyristors Fedison JB, Chow TP
743 - 746	Turn-off performance of a 2.6 kV 4H-SiC asymmetrical GTO thyristor Agarwal AK, Ivanov PA, Levinshtein ME, Palmour JW, Rumyantsev SL, Ryu SH, Shur MS
747 - 752	SiC based gas sensors and their applications Savage S, Svenningstorp H, Uneus L, Kroutchinine A, Tobias P, Ekedahl LG, Lundstrom I, Harris C, Spetz AL
753 - 756	High temperature 10 bar pressure sensor based on 3C-SiC/SOI for turbine control applications Zappe S, Franklin J, Obermeier E, Eickhoff M, Moller H, Krotz G, Rougeot C, Lefort O, Stoemenos J
757 - 761	Charged particle detection properties of epitaxial 4H-SiC Schottky diodes Nava F, Vanni P, Verzellesi G, Castaldini A, Cavallini A, Polenta L, Nipoti R, Donolato C
763 - 766	Thin heavily compensated 6H-SiC epilayers as nuclear particle detectors Lebedev AA, Strokan NB, Ivanov AM, Davydov DV, Kozlovskii VV
769 - 778	The role of threading dislocations in the physical properties of GaN and its alloys Speck JS
779 - 782	AlN crystal growth by sublimation technique Karpov SY, Kulik AV, Ramm MS, Mokhov EN, Roenkov AD, Vodakov YA, Makarov YN
783 - 786	Investigation of the structure of 2H-AlN firms on Si(001) substrates Jinschek J, Kaiser U, Lebedev V, Richter W
787 - 790	Formation and electronic transport of 2D electron and hole gases in AlGaN/GaN heterostructures Link A, Ambacher O, Smorchkova IP, Mishra UK, Speck JS, Stutzmann M
791 - 794	Luminescence of InGaN/GaN multiple quantum wells grown by mass-transport Pozina G, Bergman JP, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I
795 - 798	From relaxed to highly tensily strained GaN grown on 6H-SiC and Si(111): Optical characterization Leroux M, Lahreche H, Semond F, Laugt M, Feltin E, Schnell N, Beaumont B, Gibart P, Massies J
799 - 802	Electron traps in undoped GaN layers subjected to gamma-irradiation and annealing Davydov DV, Emtsev VV, Lebedev AA, Lundin WV, Poloskin DS, Shmidt NM, Usikov AS, Zavarin EE
803 - 806	Characterization of GaAlN/GaN superlattice heterostructures Makkai Z, Pecz B, di Forte-Poisson MA, Huet F
807 - 813	III-Nitride power devices - Good results and great expectations Shur M, Gaska R, Khan A
815 - 818	High-performance surface-channel diamond field-effect transistors Umezawa H, Taniuchi H, Arima T, Tachiki M, Okushi H, Kawarada H