Materials Science Forum

Materials Science Forum, Vol.457-460 Entire volume, number list

ISSN: 0255-5476 (Print)

In this Issue (390 articles)

3 - 7	Silicon carbide crystal and substrate technology: A survey of recent advances Hobgood HM, Brady MF, Calus MR, Jenny JR, Leonard RT, Malta DP, Muller SG, Powell AR, Tsvetkov VF, Glass RC, Carter CH
9 - 14	SiC crystal growth by HTCVD Ellison A, Magnusson B, Sundqvist B, Pozina G, Bergman JP, Janzen E, Vehanen A
15 - 20	Effects of ionicity on defect physics of wide-band-gap semiconductors Van de Walle CG
21 - 26	Possibility of power electronics paradigm shift with wide band gap semiconductors Ohashi H
29 - 34	High-quality SiC bulk single crystal growth based on simulation and experiment Nishizawa SI, Kato T, Kitou Y, Oyanagi N, Hirose F, Yamaguchi H, Bahng W, Arai K
35 - 40	Development of large diameter high-purity semi-insulating 4H-SiC wafers for microwave devices Jenny JR, Malta DP, Calus MR, Muller SG, Powell AR, Tsvetkov VF, Hobgood HM, Glass RC, Carter CH
41 - 46	Large diameter 4H-SiC substrates for commercial power applications Powell AR, Leonard RT, Brady MF, Muller SG, Tsvetkov VF, Trussell R, Sumakeris JJ, Hobgood HM, Burk AA, Glass RC, Carter CH
47 - 50	Investigation of graphite particle inclusions in 6H-SIC single crystals grown by sublimation boule growth technique Nishiguchi T, Nakamura M, Isshiki T, Ohshima S, Nishino S
51 - 54	Study of polytype switching vs. micropipes in PVT grown SiC single crystals Wang S, Sanchez E, Kopec A, Zhang M, Hernandez O
55 - 58	Analysis of graphitization during physical vapor transport growth of silicon carbide Wellmann PJ, Herro Z, Sakwe SA, Masri P, Bogdanov M, Karpov S, Kulik A, Ramm M, Makarov Y
59 - 62	Thermodynamic analysis of the production of silicon carbide via silicon dioxide and carbon Sevast'yanov VG, Ezhov YS, Simonenko EP, Kuznetsov NT
63 - 66	Faceted growth of SiC bulk crystals Matukov ID, Kalinin DS, Bogdanov MV, Karpov SY, Ofengeim DK, Ramm MS, Barash JS, Mokhov EN, Roenkov AD, Vodakov YA, Ramm MG, Helava H, Makarov YN
67 - 70	Theoretical analysis of the mass transport in the powder charge in long-term bulk SiC growth Kulik A, Bogdanov MV, Karpov SY, Ramm MS, Makarov YN
71 - 74	Free growth of 4H-SiC by sublimation method Dedulle JM, Anikin M, Pons M, Blanquet E, Pisch A, Madar R, Bernard C
75 - 78	Advanced PVT growth of 2 & 3-inch diameter 6H SiC crystals Anderson TA, Barrett DL, Chen J, Elkington WT, Emorhokpor E, Gupta A, Johnson CJ, Hopkins RH, Martin C, Kerr T, Semenas E, Souzis AE, Tanner CD, Yoganathan M, Zwieback I
79 - 82	Radial expansion growth of SiC single crystals with higher crystal quality Fujimoto T, Tsuge H, Katsuno M, Ohtani N, Yashiro H, Nakabayashi M
83 - 86	Growth and characterization of SiC bulk crystals grown on an off-oriented (1120) seed crystal Katsuno M, Ohtani N, Fujimoto T, Yashiro H
87 - 90	Growth of bulk SiC by halide chemical vapor deposition Fanton M, Skowronski M, Snyder D, Chung HJ, Nigam S, Weiland B, Huh SW
91 - 94	Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method Chaussende D, Balloud C, Auvray L, Baillet F, Zielinski M, Juillaguet S, Mermoux M, Pernot E, Camassel J, Pons M, Madar R
95 - 98	Effect of thermal field on interface step structures during PVT growth of (0001)Si 6H-SiC Herro ZG, Epelbaum BM, Bickermann M, Masri P, Winnacker A
99 - 102	Large diameter and long length growth of SiC single crystal Kato T, Ohno T, Hirose F, Oyanagi N, Nishizawa S, Arai K
103 - 106	Effect of crucible design on the shape and the quality in 6H-SiC crystals grown by physical vapor transport Um MY, Song HK, Na HJ, Kim DH, Song IB, Jung SY, Jeong JK, Lee JB, Kim HJ
107 - 110	Sublimation growth of SiC crystal using modified crucible design on 4H-SiC {03-38} substrate and defect analysis Furusho T, Takagi H, Ota S, Shiomi H, Nishino S
111 - 114	Natural crystal habit and preferential growth directions during PVT of silicon carbide Herro ZG, Epelbaum BM, Bickermann M, Masri P, Seitz C, Magerl A, Winnacker A
115 - 118	High quality SiC bulk growth by sublimation method using elemental silicon and carbon powder as SiC source materials Ota S, Furusho T, Takagi H, Oshima S, Nishino S
119 - 122	Flux growth of SiC crystals from eutectic melt SIC-B4C Epelbaum BM, Gurzhiyants PA, Herro Z, Bickermann M, Winnacker A
123 - 126	Solution growth of self-standing 6H-SiC single crystal using metal solvent Kusunoki K, Munetoh S, Kamei K, Hasebe M, Ujihara T, Nakajima K
127 - 130	The effect of a periodic movement on the die of the bottom line of the melt/gas meniscus in the case of silicon filaments grown from the melt in a vacuum by edge-defined film-fed growth method Braescu L, Balint AM, Balint S
131 - 134	Continuous growth of SiC single crystal by the spray dried powder made of ultra-fine particle precursors Yamada Y, Nishizawa S, Nakashima S, Arai K
135 - 138	Comparison between various chemical systems for the CVD step in the CF-PVT crystal growth method Auvray L, Chaussende D, Baillet F, Charpentier L, Pons M, Madar R
139 - 142	In situ SiC feeding by chemical vapor deposition for bulk growth Charpentier L, Baillet F, Chaussende D, Auvray L, Pons M, Pernot E, Madar R
143 - 146	Stable parameter range for 3C-SiC sublimation growth on graphite Wollweber J, Mantzari A, Polychroniadis EK, Balloud C, Freudenberg A, Nitschke R, Camassel J
147 - 150	Microstructure of cubic SiC grown by the modified Lely-method Nerding M, Semmelroth K, Pensl G, Nagasawa H, Strunk HP
151 - 154	Growth of 3C-SiC bulk material by the modified Lely method Semmelroth K, Krieger M, Pensl G, Nagasawa H, Pusche R, Hundhausen M, Ley L, Nerding M, Strunk HP
157 - 162	Characterization of SiC epitaxial structures using high-resolution X-ray diffraction techniques Huang XR, Dudley M, Cho W, Okojie RS, Neudeck PG
163 - 168	Surface mechanisms in homoepitaxial growth on alpha-SiC {0001}-vicinal faces Nakamura S, Kimoto T, Matsunami H
169 - 174	Step free surface heteroepitaxy of 3C-SiC layers on patterned 4H/6H-SiC mesas and cantilevers Neudeck PG, Powell JA, Trunek AJ, Spry DJ
175 - 180	Flash Lamp Supported Deposition of 3C-SiC (FLASiC) - a promising technique to produce high quality cubic SiC layers Skorupa W, Panknin D, Anwand W, Voelskow M, Ferro G, Monteil Y, Leycuras A, Pezoldt J, McMahon R, Smith M, Camassel J, Stoemenos J, Polychroniadis E, Godignon P, Mestres N, Turover D, Rushworth S, Friedberger A
181 - 184	Properties and suitability of 4H-SIC epitaxial layers grown at different CVD systems for hijh voltage applications Thomas B, Bartsch W, Stein R, Schorner R, Stephani D
185 - 188	Selective growth of 4H-SIC on 4H-SiC substrates using a high temperature mask Li C, Seiler J, Bhat I, Chow TP
189 - 192	Homoepitaxial growth of 4H-SiC on trenched substrates by chemical vapor deposition Chen Y, Kimoto T, Takeuchi Y, Malhan RK, Matsunami H
193 - 196	Homoepitaxial on-axis growth of 4H-and 6H-SIC by CVD Hallin C, Wahab Q, Ivanov I, Bergman P, Janzen E
197 - 200	High-speed growth of high-purity epitaxial layers with specular surface on 4H-SiC(000-1) face Danno K, Kimoto T, Matsunami H
201 - 204	Growth of device quality 4H-SiC by high velocity epitaxy Yakimova R, Syvajarvi M, Ciechonski RR, Wahab Q
205 - 208	Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition Fujiwara H, Danno K, Kimoto T, Tojo T, Matsunami H
209 - 212	4H-SiC carbon-face epitaxial layers grown by low-pressure hot-wall chemical vapor deposition Kojima K, Takahashi T, Ishida Y, Kuroda S, Okumura H, Arai K
213 - 216	Influence of C/Si ratio on the 4H-SiC (0001) epitaxial growth and a keynote for high-rate growth Ishida Y, Takahashi T, Kojima K, Okumura H, Arai K, Yoshida S
217 - 220	Comparative studies of (0001) 4H-SiC layers grown with either Silane or HexaMethylDiSilane Propane precursor systems. Sartel C, Balloud C, Souliere V, Juillaguet S, Dazord J, Monteil Y, Camassel J, Rushworth S
221 - 224	Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization Bishop SM, Preble EA, Hallin C, Henry A, Storasta L, Jacobson H, Wagner BP, Reitmeier Z, Janzen E, Davis RF
225 - 228	Uniformity improvement in SiC epitaxial growth by using Si-condensation Harada S, Nakayama K, Sasaki M, Shiomi H
229 - 232	Growth and characterization of the 4H-SiC epilayers on substrates with different off-cut directions Tsuchida H, Kamata I, Izumi S, Tawara T, Izumi K
233 - 236	Homoepitaxial growth of Al-doped 4H-SiC using bis-trimethylsilylmethane precursor Song HK, Um MY, Na HJ, Kim DH, Song IB, Jung SY, Jeong JK, Lee JB, Kim HJ
237 - 240	Investigation of < 1,1,-2,0 > epitaxial layers grown on a-cut 4H-SiC substrates. Blanc C, Sartel C, Souliere V, Juillaguet S, Monteil Y, Camassel J
241 - 244	Vapour-Liquid-Solid induced localised growth of heavily Al doped 4H-SiC on patterned substrate Jacquier C, Ferro G, Godignon P, Montserrat J, Dezellus O, Monteil Y
245 - 248	Comparison of different metal additives to Si for the homoepitaxial growth of 4H-SiC layers by Vapour-Liquid-Solid mechanism Abdou F, Jacquier C, Ferro G, Cauwet F, Monteil Y
249 - 252	Simple model for calculation of SiC epitaxial layers growth rate in vacuum. Davydov SY, Savkina NS, Lebedev AA, Syvajarvi M, Yakimova R
253 - 256	Modelling of SiC-matrix composite formation by thermal gradient chemical vapour infiltration Kulik VI, Kulik AV, Ramm MS, Makarov YN
257 - 260	Pendeo epitaxial growth of 3C-SiC on Si substrates Shoji A, Okui Y, Nishiguchi T, Ohshima S, Nishino S
261 - 264	Comparative growth behavior of 3C-SiC mesa heterofilms with and without extended defects Trunek AJ, Neudeck PG, Powell JA, Spry DJ
265 - 268	Checker-board carbonization for control and reduction of the mean curvature of 3C-SiC layers grown on Si(100) substrates Chassagne T, Ferro G, Haas H, Leycuras A, Mank H, Monteil Y
269 - 272	Growth of SiC films using tetraethylsilane Kubo N, Kawase T, Asahina S, Kanayama N, Tsuda H, Moritani A, Kitahara K
273 - 276	Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal "hot-walls" Chassagne T, Leycuras A, Balloud C, Arcade P, Peyre H, Juillaguet S
277 - 280	Interfacial strain and defects in Si (001) carbonisation layers for 3C-SiC hetero-epitaxy Bustarret E, Araujo D, Mendez D, Morales FM, Pacheco FJ, Molina SI, Rochat N, Ferro G, Monteil Y
281 - 284	Potential of HMDS/C3H8 precursor system for the growth of state of the art heteroepitaxial 3C-SiC layers on Si(100) Ferro G, Camassel J, Juillaguet S, Balloud C, Polychroniadis EK, Stoimenos Y, Seigle-Ferrand P, Dazord J, Monteil Y, Rushworth SA, Smith LM
285 - 288	Structural analysis of (211) 3C-SiC on (211) Si substrates grown by chemical vapor deposition Nishiguchi T, Mukai Y, Nakamura M, Nishio K, Isshiki T, Ohshima S, Nishino S
289 - 292	Crystal growth of 6H-SIC(01-14) on 3C-SiC(001) substrate by sublimation epitaxy Takagi H, Nishiguchi T, Ohta S, Furusho T, Ohshima S, Nishino S
293 - 296	Structure and composition of 3C-SiC : Ge alloys grown on Si (111) substrates by SSMBE Weih P, Cimalla V, Stauden T, Kosiba R, Spiess L, Romanus H, Gubisch M, Bock W, Freitag T, Fricke P, Ambacher O, Pezoldt J
297 - 300	Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111) Morales FM, Zgheib C, Molina SI, Araujo D, Garcia R, Fernandez C, Sanz-Hervas A, Masri P, Weih P, Stauden T, Ambacher O, Pezoldt J
301 - 304	Stress control in 3C-SiC films grown on Si(111) Zgheib C, Masri P, Weih P, Ambacher O, Pezoldt J
305 - 308	Development of a high-throughput LPCVD process for depositing low stress poly-SiC Fu XA, Dunning J, Zorman CA, Mehregany M
309 - 312	Low temperature ECR-PECVD microcrystalline SiC growth by pulsed gas flows Hernandez MJ, Cervera M, Piqueras J, del Cano T, Jimenez J
313 - 316	Investigation of thick 3C-SiC films re-grown on thin 35 nm "Flash Lamp Annealed" 3C-SiC layers Ferro G, Panknin D, Stoemenos J, Balloud C, Camassel J, Polychroniadis E, Monteil Y, Skorupa W
317 - 320	Low temperature (320 degrees C) deposition of hydrogenated microcrystalline cubic silicon carbide thin films Miyajima S, Yamada A, Konagai M
321 - 324	Effect of carbonization in bias-enhanced nucleation step during highly-oriented growth of diamond films on 6H-SiC(0001) substrate Seo SH, Lee TH, Park JS, Song JS, Oh MH
325 - 328	Formation of SiC/Si multilayer structures on Si(100) by supersonic free jets of single gas source CH3SiH3 Ikoma Y, Ohtani R, Motooka T
329 - 332	Growth of SiC nanorods and microcrystals by carbon nanotubes-confined reaction Shajahan M, Mo YH, Nahm KS
333 - 336	Modelling and regrowth mechanisms of flashlamp processing of SiC-on-silicon heterostructures Smith M, McMahon R, Voelskow M, Skorupa W, Stoemenos J
339 - 342	Structural defects in SiC crystals investigated by high energy x-ray diffraction Weisser M, Seitz C, Wellmann PJ, Hock R, Magerl A
343 - 346	TEM observations of 4H-SiC deformed at room temperature and 150 degrees C Demenet JL, Milhet X, Rabier J, Cordier P
347 - 350	TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent Kamei K, Kusunoki K, Munetoh S, Ujihara T, Nakajima K
351 - 354	Structural characterization of thin 3C-SiC films annealed by the flash lamp process Polychroniadis E, Stoemenos J, Ferro G, Monteil Y, Panknin D, Skorupa W
355 - 358	Study of dislocation mobility in 4H SiC by X-Ray transmission topography, chemical etching and transmission electron microscopy Idrissi H, Lancin M, Regula G, Pichaud B
359 - 362	TEM of dislocations in forward-biased 4H-SiC PiN diodes Zhang M, Lendenmann H, Pirouz P
363 - 366	X-ray imaging and TEM study of micropipes related to their propagation through porous SiC layer/SiC epilayer interface. Argunova TS, Gutkin MY, Je JH, Sorokin LM, Mosina GN, Savkina NS, Shuman VB, Lebedev AA
367 - 370	Structural transformation of dislocated micropipes in silicon carbide Gutkin MY, Sheinerman AG, Argunova TS, Mokhov EN, Je JH, Hwu Y, Tsai WL
371 - 374	Deformation of 4H-SiC single crystals oriented for prism slip Zhang M, Hobgood HM, Pirouz P
375 - 378	Inelastic stress relaxation in single crystal SiC substrates Okojie RS
379 - 382	Dependence of micropipe dissociation on surface orientation Kamata I, Tsuchida H, Izumi S, Tawara T, Izumi K
383 - 386	Analysis of threading dislocations in wide-bandgap hexagonal semiconductors by energetic approach Semennikov A, Karpov SY, Ramm MS, Romanov AE, Makarov YN
387 - 390	Electron Back Scattering Diffraction (EBSD) as a tool for the investigation of 3C-SiC nucleation and growth on 6H or 4H Chaussende D, Chaudouet P, Auvray L, Pons M, Madar R
391 - 394	Reconstruction of cleaved 6H-SiC surfaces Starke U, Tallarida M, Kumar A, Horn K, Seifarth O, Kipp L
395 - 398	The atomic structure of the hydrogen saturated a-planes of 4H-SiC Seyller T, Sieber N, Emtsev KV, Graupner R, Ley L, Tadich A, James D, Riley JD, Leckey RCG, Polcik M
399 - 402	H-induced Si-rich 3C-SiC(100) 3x2 surface metallization D'angelo M, Enriquez H, Silly MG, Decke V, Aristov VY, Soukiassian P, Ottavianni C, Pedio M, Perfetti P
403 - 406	Morphological evolution of SiC(0001) surfaces without ambient gas by high temperature annealing in high-vacuum Yasushi A, Sano N, Kaneko T
407 - 410	SiC surface nanostructures induced by self-ordering of nano-facets Tanaka S, Nakagawa H, Suemune I
411 - 414	Dynamics of laser ablation in SiC Medvid A, Lytvyn P
415 - 418	Tailoring the SiC subsurface stacking by the chemical potential Starke U, Bernhardt J, Schardt J, Seubert A, Heinz K
419 - 422	Growth of ultrathin Ag films on 4H-SiC(0001) Soubatch S, Starke U
423 - 426	Wettability study of SiC in correlation with XPS analysis Stambouli V, Chaussende D, Anikin M, Berthome G, Thoreau V, Joud JC
427 - 430	Interface electronic structures of transition metal(Cr, Fe) on 6H(4H)-SiC(0001)Si face by soft X-ray fluorescence spectroscopy Hirai M, Kamezawa C, Azatyan S, An Z, Shinagawa T, Fujisawa T, Kusaka M, Iwani M
431 - 434	Modification of 6H-SiC surface defect structure during hydrogen etching Bondokov RT, Tipirneni N, Cherednichenko DI, Sudarshan TS
437 - 442	Defects in high-purity semi-insulating SiC Son NT, Magnusson B, Zolnai Z, Ellison A, Janzen E
443 - 448	Antisites as possible origin of irradiation induced photoluminescence centers in SiC: A theoretical study on clusters of antisites and carbon interstitials in 4H-SiC Gali A, Deak P, Rauls E, Ordejon P, Carlsson FHC, Ivanov IG, Son NT, Janzen E, Choyke WJ
449 - 452	A theoretical study of carbon clusters in SiC: a sink and a source of carbon interstitials Mattausch A, Bockstedte M, Pankratov O
453 - 456	Density functional based modelling of 30 degrees partial dislocations in SiC Blumenau AT, Jones R, Oberg S, Briddon PR, Frauenheim T
457 - 460	Atomic computer simulations of defect migration in 3C and 4H-SiC Gao F, Weber WJ, Posselt M, Belko V
461 - 464	Optical and EPR signatures of intrinsic defects in ultra high purity 4H-SiC Carlos WE, Glaser ER, Shanabrook BV
465 - 468	EPR and pulsed ENDOR study of EI6 and related defects in 4H-SiC Umeda T, Ishitsuka Y, Isoya J, Morishita N, Ohshima T, Kamiya T
469 - 472	Investigations of possible nitrogen participation in the Z(1)/Z(2) defect in 4H-SiC Storasta L, Henry A, Bergman JP, Janzen E
473 - 476	Annealing behaviour of vacancy- and antisite-related defects in electron-irradiated 4H-SiC Zolnai Z, Son NT, Magnusson B, Hallin C, Janzen E
477 - 480	Spin dependent recombination at deep-level centers in 6H silicon carbide/silicon metal oxide semiconductor field effect transistors Meyer DJ, Bohna NA, Lenahan PM, Lelis A
481 - 484	Evidence for a deep two charge state defect in high energy electron irradiated 4H-SiC Alfieri G, Monakhov E, Svensson BG
485 - 488	Negative-U-centers in 4H-and 6H-SiC detected by spectral light excitation Weidner M, Pensl G, Nagasawa H, Schoner A, Ohshima T
489 - 492	Optically induced transitions among point defects in high purity and vanadium-doped semi-insulating 4H SiC Zvanut ME, Konovalov VV, Mitchel WC, Mitchell WD
493 - 496	Defects in He+ irradiated 6H-SiC probed by DLTS and LTPL measurements Ruggiero A, Libertino S, Mauceri M, Reitano R, Musumeci P, Roccaforte F, La Via F, Calcagno L
497 - 500	The influence of recombination-induced migration of hydrogen on the formation of V-Si-H complexes in SiC Koshka Y, Mazzola MS
501 - 504	Photo-EPR and hall measurements on undoped high purity semi-insulating 4H-SiC substrates Kalabukhova EN, Lukin SN, Savchenko DV, Mitchel WC, Mitchell WD
505 - 508	Excess carrier lifetime mapping for bulk SiC wafers by microwave photoconductivity decay method and its relationship with structural defect distribution Kato M, Ichimura M, Arai E, Sumie S, Hashizume H
509 - 512	Investigations of defects introduced in 4H-SiC n-type epitaxial layers by hydrogen DC plasma Ottaviani L, Yakimov E, Hidalgo P, Martinuzzi S
513 - 516	Midgap defects in 4H-, 6H- and 3C-SiC detected by deep level optical spectroscopy Reshanov SA, Schneider K, Helbig R, Pensl G, Nagasawa H, Schoner A
517 - 520	Annealing study on radiation-induced defects in 6H-SiC Pinheiro MVB, Lingner T, Caudepon F, Greulich-Weber S, Spaeth JM
521 - 524	Crystallographic defects under surface morphological defects of 4H-SiC homoepitaxial films Okada T, Kimoto T, Yamai K, Matsunami H, Inoko F
525 - 528	Formation of stacking faults in diffused SiC p(+)/n(-)/n(+) and p(+)/p(-)/n(+) diodes Soloviev S, Cherednichenko D, Sudarshan TS
529 - 532	Residual stresses and stacking faults in n-type 4H-SiC epilayers Okojie RS, Zhang M, Pirouz P
533 - 536	Stacking fault formation sites and growth in thick-epi SiC PiN diodes Stahlbush RE, Twigg ME, Irvine KG, Sumakeris JJ, Chow TP, Losee PA, Zhu L, Tang Y, Wang W
537 - 540	Partial dislocations and stacking faults in 4H-SiC PiN diodes Twigg ME, Stahlbush RE, Fatemi M, Arthur SD, Fedison JB, Tucker JB, Wang S
543 - 548	SiC studied via LEEN and cathodoluminescence spectroscopy Brillson LJ, Tumakha S, Okojie RS, Zhang M, Pirouz P
549 - 554	Properties of the bound excitons associated to the 3838 angstrom line in 4H-SiC and the 4182 angstrom line in 6H-SiC Henry A, Janson MS, Janzen E
555 - 560	Electrical transport properties of n-type 4H and 6H silicon carbide Contreras S, Pernot J
561 - 564	Further investigation of silicon vacancy-related luminescence in 4H and 6H SiC Steeds JW, Furkert S, Hayes JM, Sullivan W
565 - 568	Evaluation of free carrier lifetime and deep levels of the thick 4H-SiC epilayers Tawara T, Tsuchida H, Izumi S, Kamata I, Izumi K
569 - 572	Photoluminescence mapping of a SiC wafer in device processing Tajima M, Sugahara T, Hoshino N, Tanimoto S, Takahashi T, Nakashima S, Yamamoto T
573 - 576	Spontaneous polarization of 4H SiC determined from optical emissions of 4H/3C/4H-SiC quantum wells Bai S, Devaty RP, Choyke WJ, Kaiser U, Wagner G, MacMillan MF
577 - 580	Optical investigation of stacking faults and micro-crystalline inclusions in-low-doped 4H-SiC layers Juillaguet S, Balloud C, Pernot J, Sartel C, Souliere V, Camassel J, Monteil Y
581 - 584	Characterization of double stacking faults induced by thermal processing of heavily N-doped 4H-SiC substrates Skromme BJ, Mikhov MK, Chen L, Samson G, Wang R, Li C, Bhat I
585 - 588	Photoluminescence excitation spectroscopy on the donor-acceptor pair luminescence in 4H and 6H SiC Ivanov IG, Janzen E
589 - 592	Photoluminescence study of C-H and C-D centers in 4H SiC Bai S, Yan F, Devaty RP, Choyke WJ, Grotzschel R, Wagner G, MacMillan MF
593 - 596	Optical characterization of full SiC wafer El Harrouni I, Bluet JM, Ziane D, Mermoux M, Baillet F, Guillot G
597 - 600	Electroluminescence of p-3C-SiC/n-6H-SiC heterodiodes, grown by sublimation epitaxy in vacuum Lebedev AA, Stel'chuk AM, Kuznetsov AN, Savkina NS
601 - 604	Nondestructive defect characterization of SiC epilayers and its significance for SiC device research Ma X, Dudley M, Sudarshan T
605 - 608	Two-photon spectroscopy of 4H-SiC by using laser pulses at below-gap frequencies Grivickas V, Grivickas P, Linnros J, Galeckas A
609 - 612	Raman imaging characterization of structural and electrical properties in 4H SiC Mermoux M, Crisci A, Baillet F
613 - 616	Raman scattering by coupled phonon-plasmon modes Falkovsky LA
617 - 620	Study of the temperature induced polytype conversion in cubic CVD SiC by Raman spectroscopy Pusche R, Hundhausen M, Ley L, Semmelroth K, Schmid F, Pensl G, Nagasawa H
621 - 624	Anisotropy of electron mobility in n-type 15R-SiC studied by Raman scattering Kurimoto E, Hangyo M, Harima H, Kisoda K, Nishiguchi T, Nishino S, Nakashima S, Katsuno M, Ohtani N
625 - 628	Micro-Raman investigation of growth-induced defects in 6H and 4H SiC crystals grown by sublimation method Seo SH, Park JH, Song JS, Oh MH
629 - 632	Deep UV excitation Raman spectroscopy of homoepitaxial 4H-SiC films grown by microwave plasma chemical vapor deposition Okamoto M, Kosugi R, Nakashima S, Fukuda K, Arai K
633 - 636	Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy Ujihara T, Munetoh S, Kusunoki K, Kamei K, Usami N, Fujiwara K, Sazaki G, Nakajima K
637 - 640	Low temperature annealing of optical centres in 4H SiC Steeds JW, Furkert S, Hayes JM, Sullivan W
641 - 644	Isotope effects on hydrogen-related bound exciton spectra in SiC Bai S, Choyke WJ, Devaty RP
645 - 648	On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC Weingartner R, Wellmann PJ, Winnacker A
649 - 652	Temperature-dependence of zone-center phonon modes in 4H-SiC Blanc C, Pernot J, Camassel J
653 - 656	Brillouin scattering studies of surface acoustic waves in SiC Andrews GT, Clouter MJ, Mroz B, Shishkin Y, Ke Y, Devaty RP, Choyke WJ
657 - 660	Optical investigation of the built-in strain in 3C-SiC epilayers Galeckas A, Kuznetsov AY, Chassagne T, Ferro G, Linnros J, Grivickas V
661 - 664	Specificity of electron impact ionization in superstructure silicon carbide Sankin VI, Shkrebiy PP, Savkina NS, Lepneva AA
665 - 668	Nonequilibrium carrier lifetime and diffusion coefficients in 6H-SiC Tamulaitis G, Yilmaz I, Shur MS, Gaska R, Anderson T
669 - 672	Electrical characterization of semi-insulating 6H-SiC substrates Sanchez E, Wan J, Wang S, Loboda M, Li C, Skowronski M
673 - 676	Impact ionization coefficients of 4H-SiC Hatakeyama T, Watanabe T, Kojima K, Sano N, Shiraishi K, Kushibe M, Imai S, Shinohe T, Suzuki T, Tanaka T, Arai K
677 - 680	Temperature-dependent Hall effect measurements in low-compensated p-type 4H-SiC Kasamakova-Kolaklieva L, Storasta L, Ivanov IG, Magnusson B, Contreras S, Consejo C, Pernot J, Zielinski M, Janzen E
681 - 684	Electrochemical C-V profiling of n-type 4H-SiC Zekentes K, Kayambaki M, Mousset S
685 - 688	Impurity conduction observed in Al-doped 6H-SIC Krieger M, Semmelroth K, Pensl G
689 - 692	Anomalous behavior of van der Pauw sheet resistance measurements on 4H-SiC MOS inversion layers with anisotropic mobility Saks NS, Ancona MG, Lipkin LA
693 - 696	High phonon-drag thermoelectric efficiency of SiC at low temperatures Velmre E, Udal A, Grivickas V
697 - 700	As-grown and process-related defects in Schottky barrier diodes fabricated on bulk off-axis n-type 6H-SiC van Wyk E, Leitch AWR
701 - 704	Impact ionisation in alpha-SiC and avalanche photoamplifiers Sankin VI
705 - 708	Electrical study of fast neutron irradiated devices based on 4H-SiC CVD epitaxial layers Kalinina E, Kholuyanov G, Strel'chuk A, Davydov D, Hallen A, Konstantinov A, Nikiforov A
711 - 714	The nature of the shallow boron acceptor in SiC - localization versus effective mass theory Gerstmann U, Gali A, Deak P, Frauenheim T, Overhof H
715 - 718	The solubility and defect equilibrium of the n-type dopants nitrogen and phosphorus in 4H-SiC: a theoretical study Bockstedte M, Mattausch A, Pankratov O
719 - 722	Uniform axial charge carrier concentration in PVT-grown p-type 6H SiC by non-uniform distribution of boron in the powder source Herro ZG, Bickermann M, Epelbaum BM, Weingartner R, Kunecke U, Winnacker A
723 - 726	In-situ Er-doping of SiC bulk single crystals Muller R, Desperrier P, Seitz C, Weisser M, Magerl A, Maier M, Winnacker A, Wellmann P
727 - 730	Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source Desperrier P, Muller R, Winnacker A, Wellmann PJ
731 - 734	Nitrogen doping of epitaxial SiC: Experimental evidence of the re-incorporation of etched nitrogen during growth Meziere J, Ferret P, Blanquet E, Pons M, Di Cioccio L, Billon T
735 - 738	Growth and characterisation of heavily Al-doped 4H-SiC layers grown by VLS in an Al-Si melt Jacquier C, Ferro G, Balloud C, Zielinski M, Camassel J, Polychroniadis E, Stoemenos J, Cauwet F, Monteil Y
739 - 742	Relationship between surface structures and aluminium incorporation behaviour of SiC in chemical vapor deposition Hatayama T, Yano H, Uraoka Y, Fuyuki T
743 - 746	Formation of SiC delta-doped-layer structures by CVD Takahashi K, Uchida M, Kusumoto O, Yamashita K, Miyanaga R, Kitabatake M
747 - 750	As-grown 4H-SiC epilayers with magnetic properties Syvajarvi M, Stanciu V, Izadifard M, Chen WM, Buyanova IA, Svedlindh P, Yakimova R
751 - 754	Reduction in Al acceptor density by electron irradiation in Al-doped 4H-SiC Matsuura H, Aso K, Kagamihara S, Iwata H, Ishida T, Nishikawa K
755 - 758	Non-contact doping profiling in epitaxial SiC Savtchouk A, Oborina E, Hoff AM, Lagowski J
759 - 762	Generation of stacking faults in highly doped n-type 4H-SiC substrates Zhang M, Hobgood HM, Treu M, Pirouz P
763 - 766	Spin-on doping of porous SiC with Er Koshka Y, Song Y, Walker J, Saddow SE, Mynbaeva M
767 - 770	Sc impurity in silicon carbide Yuryeva EI, Zubkov VI, Ballandovich VS, Parfenova II
771 - 774	Measurement of low level nitrogen in silicon carbide using SIMS Wang L
775 - 778	Dilute aluminum concentration in 4H-SiC : from SIMS to LTPL measurements Juillaguet S, Zielinski M, Balloud C, Sartel C, Consejo C, Boyer B, Souliere V, Camassel J, Monteil Y
779 - 782	Crystallinity and photoluminescence evaluation of Er-implanted n-type 4H-SiC subjected to an annealing process Uekusa S, Maruyama H
783 - 786	Radiotracer investigation of gadolinium induced deep levels in hexagonal silicon carbide Pasold G, Albrecht F, Hulsen C, Sielemann R, Zeitz WD, Witthuhn W
787 - 790	Analysis of different vanadium charge states in vanadium doped 6H-SiC by low temperature optical absorption and electron paramagnetic resonance Bickermann M, Irmscher K, Epelbaum BM, Winnacker A
791 - 794	Investigation of electronic states of Pd in 4H-SiC by means of Radiotracer-DLTS Grossner U, Grillenberger J, Albrecht F, Pasold G, Sielemann R, Svensson BG, Witthuhn W
797 - 800	Surface preparation of 6H-silicon carbide substrates for growth of high-quality SiC epilayers Lee KS, Lee SH, Kim M, Nahm KS
801 - 804	Electro-chemical mechanical polishing of silicon carbide Li CH, Wang RJ, Seiler J, Bhat I
805 - 808	Chemi-mechanical polishing of on-axis semi-insulating SiC substrates Heydemann VD, Everson WJ, Gamble RD, Snyder DW, Skowronski M
809 - 812	Surface modification of 3C-SiC for good Ni ohmic contact Noh JI, Lee SH, Nahm KS
813 - 816	Mechanisms in electrochemical etching of alpha-SiC substrates Mikami H, Hatayama T, Yano H, Uraoka Y, Fuyuki T
817 - 820	Modification of the Silicon Carbide by proton irradiation Bogdanova EV, Kozlovski VV, Rumyantsev DS, Volkova AA, Lebedev AA
821 - 824	Etching of SiC with fluorine ECR plasma Forster C, Cimalla V, Kosiba R, Ecke G, Weih P, Ambacher O, Pezoldt J
825 - 828	Characterization of 3C-SiC monocrystals using positron annihilation spectroscopy Kerbiriou X, Gredde A, Barthe MF, Desgardin P, Blondiaux G
829 - 832	Improvement of SiC wafer warp by annealing Sasaki M, Harada S, Okamoto Y, Miyanagi Y, Shiomi H
833 - 836	Comparison of different surface pre-treatments to n-type 4H-SiC and their effect on the specific contact resistance of Ni ohmic contacts Pope G, Guy O, Mawby PA
837 - 840	Structural characterization of alloyed Al/Ti and Ti contacts on SiC Parisini A, Poggi A, Nipoti R
841 - 844	Improved AINi ohmic contacts to p-type SiC Tsao BH, Liu S, Scofield J
845 - 848	Electrical characterization of deposited and oxidized Ta2Si as dielectric film for SiC metal-insulator-semiconductor structures. Perez A, Tournier D, Montserrat J, Mestres N, Sandiumenge F, Millan J
849 - 852	In-situ investigation of carbon reduction at Ni/4H-SiC interface using a silicon interlayer Lee WY, Teng KS, Wilks SP
853 - 856	The formation of low resistance Ohmic contacts to 4H-SiC, circumventing the need for post annealing, studied by specific contact resistance measurements and X-ray photoelectron spectroscopy. Guy OJ, Pope G, Blackwood I, Teng KS, Lee WY, Wilks SP, Mawby PA
857 - 860	The basic parameters of diffusion welded Al Schottky contacts to p- and n-SiC Korolkov O, Kuznetsova N, Ruut J, Rang T
861 - 864	Schottky-Ohmic transition in nickel silicide/SiC-4H system: the effect of non uniform Schottky barrier La Via F, Roccaforte F, Raineri V, Mauceri M, Ruggiero A, Musumeci P, Calcagno L
865 - 868	Effects of thermal treatments on the structural and electrical properties of Ni/Ti bilayers Schottky contacts on 6H-SiC Roccaforte F, La Via F, Baeri A, Raineri V, Calcagno L, Mangano F
869 - 872	Electrical characterization of inhomogeneous Ni2Si/SiC Schottky contacts Roccaforte F, La Via F, Raineri V, Pierobon R, Zanoni E
873 - 876	Study of TiW/Au thin films as metallization stack for high temperature and harsh environment devices on 6H Silicon Carbide Baeri A, Raineri V, Roccaforte F, La Via F, Zanetti E
877 - 880	High temperature and high power stability investigation of Al-based ohmic contacts to p-type 4H-SiC Kakanakov R, Kasamakova-Kolaklieva L, Hristeva N, Lepoeva G, Gomes JB, Avramova I, Marinova T
881 - 884	Contact resistivity and barrier height of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC Scorzoni A, Moscatelli F, Poggi A, Cardinali GC, Nipoti R
885 - 888	Effect of high-dose aluminium implantation on 4H-SiC oxidation Cheng L, Casady JRB, Mazzola J, Casady JB, Koshka Y, Bondarenko V
889 - 892	Structural defects formed in Al-implanted and annealed 4H-SiC Jones KA, Zheleva TS, Kulkarni VN, Ervin MH, Derenge MA, Vispute RD
893 - 896	Room temperature implantation and activation kinetics of nitrogen and phosphorus in 4H-SiC crystals. Blanque S, Perez R, Godignon P, Mestres N, Morvan E, Kerlain A, Dua C, Brylinski C, Zielinski M, Camassel J
897 - 900	Effect of implantation temperature on redistribution of Al in SiC during annealing Usov IO, Suvorova AA, Suvorov A
901 - 904	Effects of annealing conditions on resistance lowering of high-phosphorus-implanted 4H-SiC Senzaki J, Fukuda K, Arai K
905 - 908	Characterization of electrical properties in high-dose implanted and post-implantation-annealed 4H-SiC wafers using infrared reflectance spectroscopy Narita K, Hijikata Y, Yaguchi H, Yoshida S, Senzaki J, Nakashima S
909 - 912	Annealing process of N+-/P+-ions coimplanted along with Si+-, C+- or Ne+-ions into 4H-SiC - Governed by formation of electrically neutral complexes or by site-competition-effect? Schmid F, Pensl G
913 - 916	Low sheet resistance of high-dose aluminum implanted 4H-SiC using (11-20) face Negoro Y, Katsumoto K, Kimoto T, Matsunami H, Schmid F, Pensl G
917 - 920	Boron diffusion in intrinsic, n-type and p-type 4H-SiC Linnarsson MK, Janson MS, Shoner A, Konstantinov A, Svensson BG
921 - 924	Investigation of two-stage activation annealing of Al-implanted 4H-SiC layers Merrett JN, Scofield JD, Tsao BH, Mazzola M, Seale D, Draper WA, Sankin I, Casady JB, Bondarenko V
925 - 928	Reactive ion etching of Silicon Carbide with patterned Boron implantation Vassilevski K, Hedley J, Horsfall AB, Johnson CM, Wright NG
929 - 932	Activation of implanted Al and co-implanted Al/C or Al/Si in 4H-SiC Jones KA, Zheleva TS, Ervin MH, Shah PB, Derenge MA, Gerardi G, Freitas JA, Vispute RD
933 - 936	Flat surface after high-temperature annealing for phosphorus-ion implanted 4H-SiC (0001) using graphite cap Negoro Y, Katsumoto K, Kimoto T, Matsunami H
937 - 940	Contribution of X-Ray Diffraction simulations to experimental study of high energy He implantation at high dose in 4H-SiC at room temperature Declemy A, Shiryaev A, Stepanov S, Barbot JF, Beaufort MF, Oliviero E, Ntsoenzok E, Sauvage T
941 - 944	Visible light laser irradiation: A tool for implantation damage reduction Camassel J, Peyre H, Brink DJ, Zielinski M, Blanque S, Mestres N, Godignon P
945 - 948	SiC donor doping by 300 degrees C P implantation: Characterization of the doped layer properties in dependence of the post-implantation annealing temperature Poggi A, Nipoti R, Moscatelli F, Cardinali GC, Canino M
951 - 956	SiC-based current limiter devices Chante JP, Tournier D, Planson D, Raynaud C, Lazar M, Locatelli ML, Brosselard P
957 - 962	High voltage (500V-14kV) 4H-SiC unipolar-bipolar Darlington transistors for high-power and high-temperature applications Zhao JH, Li X, Tone K, Alexandrov P, Fursin L, Carter J, Weiner M
963 - 968	SiC devices for high voltage high power applications Sugawara Y
969 - 972	First principles derivation of carrier transport across metal - SiC barriers B-Dimitriu C, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG
973 - 976	Modeling of the influence of Schottky barrier inhomogeneities on SiC diode characteristics Weiss R, Frey L, Ryssel H
977 - 980	Theoretical investigations of the microwave characteristics of TUNNETT diodes made of silicon carbide Buniatyan VV, Aroutiounian VM, Zekentes K, Camara N, Soukiassian P
981 - 984	Challenges and first results of SiC Schottky diode manufacturing using a 3 inch technology Treu M, Rupp R, Brunner H, Dahlquist F, Hecht C
985 - 988	4H-SiC Power Schottky diodes. On the way to solve size limiting issues Syrkin A, Dmitriev V, Soukhoveev V, Mynbaeva M, Kakanakov R, Hallin C, Janzen E
989 - 992	Edge termination of SiC Schottky diodes with guard rings formed by high energy Boron implantation Vassilevski K, Horsfall AB, Johnson CM, Wright NG
993 - 996	Extraction of the Schottky barrier height of Ti/Al contacts on 4H-SiC from I-V and C-V measurements Moscatelli F, Scorzoni J, Poggi A, Cardinali GC, Nipoti R
997 - 1000	Origin of leakage current in SiC Schottky barrier diodes at high temperature Saitoh HS, Kimoto T, Matsunami H
1001 - 1004	Improvements in the reverse characteristics of 4H-SiC Schottky barrier diodes by hydrogen treatments Kim DH, Na HJ, Jung SY, Song IB, Um MY, Song HK, Jeong JK, Lee JB, Kim HJ
1005 - 1008	P-n junction periphery protection of 4H-SiC power p-i-n diodes using epitaxy and dry etching Sarov G, Cholakova T, Kakanakov R
1009 - 1012	Fabrication of mesa-type pn diodes without forward degradation on ultara-high-quality 6H-SiC substrate Tanaka Y, Ohno T, Oyanagi N, Nishizawa S, Suzuki T, Fukuda K, Yatsuo T, Arai K
1013 - 1016	Fabrication and characterization of 4H-SiC pn diode with field limiting ring Bahng W, Song GH, Kim HW, Seo KS, Kim NK
1017 - 1020	Current transport mechanisms in 4H-SiC pin diodes. Camara N, Bano E, Zekentes K
1021 - 1024	On-chip temperature monitoring of a SiC current limiter Tournier D, Godignon P, Millan J, Planson D, Chante JP, Sarrus F, de Palma JF
1025 - 1028	The role of the ion implanted emitter state on 6H-SiC power diodes behavior. A statistical study Lazar M, Cardinali G, Raynaud C, Poggi A, Planson D, Nipoti R, Chante JP
1029 - 1032	Low voltage silicon carbide zener diode Vassilevski KV, Zekentes K, Horsfall AB, Johnson CM, Wright NG
1033 - 1036	Design, fabrication and characterization of 5 kV 4H-SiC p(+)n planar bipolar diodes protected by junction termination extension Raynaud C, Lazar M, Planson D, Chante JP, Sassi Z
1037 - 1040	Comparison between implanted and epitaxial pin-diodes on 4H-silicon carbide Zimmermann U, Domeij M, Hallen A, Ostling M
1041 - 1044	4H-SiC P-N diode using internal ring(IR) termination technique Song GH, Kim HW, Bahng W, Kim SC, Kim NK
1045 - 1048	Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiers Rang T, Higelin G, Kurel R
1049 - 1052	Influence of H-2 pre-treatment on Ni/4H-SiC Schottky diode properties Yamamoto Y, Hatayama T, Yano H, Uraoka Y, Fuyuki T
1053 - 1056	The role of carrier lifetime in forward bias degradation of 4H-SiC PiN diodes Hefner A, McNutt T, Berning D, Singh R, Akuffo A
1057 - 1060	High-quality 3C-SiC pn-structures created by sublimation epitaxy on a 6H-SIC substrate Strel'chuk AM, Lebedev AA, Kuznetsov AN, Savkina NS, Soloviev VA
1061 - 1064	High breakdown field P-type 3C-SiC Schottky diodes grown on step-free 4H-SiC mesas Spry DJ, Trunek AJ, Neudeck PG
1065 - 1068	Electrical properties of pn diodes on 4H-SiC(000-1) C-face and (11-20) face Tanaka Y, Kojima K, Suzuki T, Hayashi T, Fukuda K, Yatsuo T, Arai K
1069 - 1072	Avalanche multiplication and breakdown in 4H-SiC diodes Ng BK, David JPR, Massey DJ, Tozer RC, Rees GJ, Yan F, Zhao JH, Weiner M
1073 - 1076	Investigation of rapid thermal annealed pn-junctions in SiC Rambach M, Weiss R, Frey L, Bauer AJ, Ryssel H
1077 - 1080	Ballistic electron emission microscopy study of p-type 4H-SiC Ding Y, Park KB, Pelz JP, Los AV, Mazzola MS
1081 - 1084	Defect influence on the electrical properties of 4H-SiC Schottky diodes Scaltrito L, Celasco E, Porro S, Ferrero S, Giorgis F, Pirri CF, Perrone D, Meotto U, Mandracci P, Richieri G, Merlin L, Cavallini A, Castaldini A, Rossi M
1085 - 1088	Analysis for structural defects in the 4H-SiC epilayers and their influence on electrical properties Izumi S, Kamata I, Tawara T, Fujisawa H, Tsuchida H
1089 - 1092	Simulation and prototype fabrication of microwave modulators with 4H-SiC p-i-n diodes Bludov AV, Boltovets MS, Vassilevski KV, Zorenko AV, Zekentes K, Lebedev AA, Krivutsa VA
1093 - 1096	Bulk SiC devices for high radiation environments Cunningham W, Cooke M, Melone J, Horn M, Kazukauskas V, Roy P, Doherty F, Glaser M, Vaitkus J, Rahman M
1097 - 1100	2.5KV-30A inductively loaded half-bridge inverter switching using 4H-SiC MPS free-wheeling diodes Li Y, Fursin L, Wu J, Alexandrov P, Zhao JH
1101 - 1104	Design and implementation of the optimized edge termination in 1.8 W4H-SiC PiN diodes Sankin I, Draper WA, Merrett JN, Casady JRB, Casady JB
1105 - 1108	High power 4H-SiC PiN diodes with minimal forward voltage drift Das MK, Sumakeris JJ, Paisley MJ, Powell A
1109 - 1112	4,308V, 20.9 m Omega center dot cm(2) 4H-SiC MPS diodes based on a 30 mu m drift layer Wu J, Fursin L, Li Y, Alexandrov P, Zhao JH
1113 - 1116	Approaches to stabilizing the forward voltage of bipolar SiC devices Sumakeris JJ, Das M, Hobgood HM, Muller SG, Paisley MJ, Ha S, Skowronski M, Palmour JW, Carter CH
1117 - 1120	Extrinsic base design of SiC bipolar transistors Danielsson E, Domeij M, Zetterling CM, Ostling M, Schoner A
1121 - 1124	Analysis of power dissipation and high temperature operation in 4H-SiC bipolar junction transistors with 4.9 MW/cm(2) power density handling ability. Perez-Wurfl I, Torvik J, Van Zeghbroeck B
1125 - 1128	Simple self-aligned fabrication process for silicon carbide static induction transistors Dynefors K, Desmaris V, Eriksson J, Nilsson PA, Rorsman N, Zirath H
1129 - 1132	Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor Brosselard P, Zorngiebel V, Planson D, Scharnholz S, Chante JP, Spahn E, Raynaud C, Lazar M
1133 - 1136	Characteristics of 6H-SiC bipolar JTE diodes realized by sublimation epitaxy and Al implantation Strel'chuk AM, Lebedev AA, Davydov DV, Savkina NS, Kuznetsov AN, Valakh MY, Kiselev VS, Romanyuk BN, Raynaud C, Chante JP, Locatelli ML
1137 - 1140	The first 4H-SiC BJT-based 20 kHz, 7HP PWM DC-to-AC inverter for induction motor control applications Zhao JH, Zhang J, Luo Y, Hu X, Li Y, Yu H, Lai J, Alexandrov P, Fursin L, Li X, Carter J, Weiner M
1141 - 1144	SiCBJT technology for power switching and RF applications Agarwal A, Ryu SH, Capell C, Richmond J, Palmour J, Bartlow H, Chow P, Scozzie S, Tipton W, Baynes T, Jones K
1145 - 1148	Base current gain of power (1800 V, 10 A) 4H-SiC npn-BJTs Ivanov PA, Levinshtein ME, Agarwal AK, Palmour JW, Ryu SH
1149 - 1152	High power(500V-70A) and high gain(44-47) 4H-SiC bipolar junction transistors Zhang J, Alexandrov P, Zhao JH
1153 - 1156	Assessment of "normally on" and "quasi on" SiCVJFET's in half-bridge circuits Mazzola MS, Casady JB, Merrett N, Sankin I, Draper W, Seale D, Bondarenko V, Koshka Y, Gafford J, Kelley R
1157 - 1160	1,530V, 17.5 m Omega cm(2) normally-off 4H-SiC VJFET design, fabrication and characterization Fursin L, Li X, Zhao JH
1161 - 1164	4,340V, 40 m Omega cm(2) normally-off 4H-SiC VJFET Zhao JH, Fursin L, Alexandrov P, Li X, Weiner M
1165 - 1168	A 500V, very high current gain (beta=1517) 4H-SiC bipolar Darlington transistor Zhang J, Alexandrov P, Zhao JH
1169 - 1172	A high voltage (1570V) 4H-SiC bipolar Darlington with current gain beta > 640 and tested in a half-bridge inverter up to 20A at V-Bus=900V Zhao JH, Zhang J, Alexandrov P, Burke T
1173 - 1176	A high voltage (1,750V) and high current gain (beta=24.8) 4H-SiC bipolar junction transistor using a thin (12 mu m) drift layer Zhao JH, Zhang J, Alexandrov P, Li X, Burke T
1177 - 1180	Effect of passivation on device stability and gate reverse characteristics on 4H-SiC MESFETs Kerlain A, Morvan E, Dua C, Caillas N, Brylinski C
1181 - 1184	Fabrication and characterization of 4H-SiC planar MESFET using ion-implantation Na HJ, Kim DH, Jung SY, Song IB, Um MY, Song HK, Jeong JK, Lee JB, Kim HJ
1185 - 1188	Deep level investigation by current and capacitance transient spectroscopy in 4H-SiC MESFETs on semi-insulating substrates. Gassoumi M, Sghaier N, Dermoul I, Chekir F, Maaref H, Bluet JM, Guillot G, Morvan E, Noblanc O, Dua C, Brylinski C
1189 - 1192	600V 4H-SiC RESURF-type JFET Fujikawa K, Harada S, Ito A, Kimoto T, Matsunami H
1193 - 1196	Influence of buffer layer on DC and RF performance of 4H SiC MESFET Los AV, Mazzola MS, Kajfez D, McDaniel BT, Smith CE, Kretchmer J, Rowland LB, Casady JB
1197 - 1200	Design of 1.7 to 14kV normally-off trenched and implanted vertical JFET in 4H-SiC Li X, Zhao JH
1201 - 1204	Optimization of vertical silicon carbide field effect transistors towards a cost attractive SiC power switch Friedrichs P, Elpelt R, Schomer R, Mitlehner H, Stephani D
1205 - 1208	RF performance and reliability of SiC MESFETs on high purity semi-insulating substrates Sriram S, Ward A, Janke C, Alcorn T, Hagleitner H, Henning J, Wieber K, Jenny J, Sumakeris J, Allen S
1209 - 1212	High frequency measurements and simulations of SiC MESFETs up to 250 degrees C Liu W, Zetterling CM, Ostling M, Eriksson J, Rorsman N, Zirath H
1213 - 1216	6A, 1kV 4H-SiC normally-off trenched-and-implanted vertical JFETs Zhao JH, Tone K, Li X, Alexandrov P, Fursin L, Weiner M
1217 - 1220	A 600V deep-implanted gate vertical JFET Mizukami M, Takikawa O, Murooka M, Imai S, Kinoshita K, Hatakeyama T, Tsukuda M, Saito W, Omura I, Shinohe T
1221 - 1224	Single contact-material MESFETs on 4H-SiC Tanimoto S, Inada M, Kiritani N, Hoshi M, Okushi H, Arai K
1225 - 1228	DC and RF performance of insulating gate 4H-SiC depletion mode Field Effect Transistors Jonsson R, Wahab Q, Rudner S
1229 - 1232	Investigation of the scalability of 4H-SiC MESFETs for high frequency applications Rorsman N, Nilsson PA, Eriksson J, Andersson K, Zirath H
1233 - 1236	The theoretical study on total power dissipation of SiC devices in comparison with Si devices Adachi K, Ohashi H, Arai K
1237 - 1240	Scattering probabilities for multiband hole states at high electric fields and high collision rates in 4H-SiC Martinez A, Hjelm M, Nilsson HE, Lindefelt U
1241 - 1244	Edge termination technique for SiC power devices Kim HW, Bahng W, Song GH, Kim SC, Kim NK, Kim ED
1245 - 1248	BIFET - a novel bipolar SiC switch for high voltage power electronics Mitlehner H, Friedrichs P, Elpelt R, Dohnke KO, Schorner R, Stephani D
1249 - 1252	A review of SiC power switch: achievements, difficulties and perspectives Sankin I, Merrett JN, Draper WA, Casady JRB, Casady JB
1253 - 1256	A highly effective edge termination design for SiC planar high power devices Perez R, Mestres N, Blanque S, Tournier D, Jorda X, Godignon P, Nipoti R
1257 - 1260	Optimization of JTE edge terminations for 10kV power devices in 4H-SiC Wang X, Cooper JA
1263 - 1268	The SiC-SiO2 interface: A unique advantage of SiC as a wide energy-gap material Dimitrijev S
1269 - 1274	A long-term reliability of thermal oxides grown on n-type 4H-SiC wafer Senzaki J, Goto M, Kojima K, Yamabe K, Fukuda K
1275 - 1280	Recent advances in (0001) 4H-SiC MOS device technology Das MK
1281 - 1286	Characterizations of SiC/SiO2 interface quality toward high power MOSFETs realization Ziane D, Bluet JM, Guillot G, Godignon P, Monserrat J, Ciechonski R, Syvajarvi M, Yakimova R, Chen L, Mawby P
1287 - 1292	Hall effect measurements in SiC buried-channel MOS devices Saks NS, Ryu SH
1293 - 1296	First-principles study of O adsorption at SiC surface Rurali R, Wachowicz E, Ordejon P, Godignon P, Rebollo J, Hyldgaard P
1297 - 1300	Interface states in abrupt SiO2/4H-and 6H-SiC(0001) from first-principles: Effects of Si dangling bonds, C dangling bonds and C clusters Ohnuma T, Tsuchida H, Jikimoto T
1301 - 1304	Investigation of SiO2/SiC interface using positron annihilation technique Maekawa M, Kawasuso A, Yoshikawa M, Ichimiya A
1305 - 1308	A comparison between SiO2/4H-SiC interface traps on (0001) and (1120) faces Olafsson HO, Hallin C, Sveinbjornsson EO
1309 - 1312	Interface properties of 4H-SiC/SiO2 with MOS capacitors and FETs annealed in O-2, N2O, NO and CO2 Wang W, Banerjee S, Chow TP, Gutmann RJ, Issacs-Smith T, Williams J, Jones KA, Lelis A, Tipton W, Scozzie S, Agarwal A
1313 - 1316	Initial oxidation of 6H-SiC (0001) (root 3x root 3)-R30 degrees and 3x3 surfaces studied by AES and RHEED Aoyama T, Voegeli W, Ichimiya A, Hisada Y, Mukainakano S
1317 - 1320	Initial stages of thermal oxidation of 4H-SiC(11(2)over-bar0) studied by photoelectron spectroscopy Seyller T, Emtsev KV, Graupner R, Ley L
1321 - 1324	Oxidation studies of non-polar 4H-SiC surfaces Virojanadara C, Johansson LI
1325 - 1328	Carbon-terminated 3C-SiC(100) surface oxidation studied by high-resolution core level photoemission spectroscopy using synchrotron radiation Roy J, Silly MG, Enriquez H, Soukiassian P, Crotti C, Fontana S, Perfetti P
1329 - 1332	A photoemission study of polar and non-polar SiC surfaces oxidized in N2O. Johansson LI, Virojanadara C, Eickhoff T, Drube W
1333 - 1336	Radical nitridation of ultra-thin SiO2/SiC structure Yano H, Furumoto Y, Niwa T, Hatayama T, Uraoka Y, Fuyuki T
1337 - 1340	Ellipsometric study of thermal silicon oxide and sacrificial silicon oxide on 4H-SiC Chen L, Guy OJ, Pope G, Teng KS, Maffeis T, Wilks SP, Mawby PA, Jenkins T, Brieva A, Hayton DJ
1341 - 1344	Photoemission spectroscopic studies on oxide/SiC interfaces formed by dry and pyrogenic oxidation Hijikata Y, Yaguchi H, Ishida Y, Yoshikawa M, Kamiya T, Yoshida S
1345 - 1348	Diluted nitric oxide (NO) annealing of SiO2/4H-SiC in cold-wall oxidation furnace Kosugi R, Fukuda K
1349 - 1352	Thermal oxidation of 4H-silicon carbide using the afterglow method Hoff AM, Oborina E, Saddow SE, Savtchouk A
1353 - 1356	Fast oxidation of 4H-SiC at room temperature by electrochemical methods Mikami H, Hatayama T, Yano H, Uraoka Y, Fuyuki T
1357 - 1360	Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation Poggi A, Nipoti R, Solmi S, Bersani M, Vanzetti L
1361 - 1364	Electronic properties of SiON/HfO2 insulating stacks on 4H-SiC (0001) Afanas'ev VV, Campbell SA, Cheong KY, Ciobanu F, Dimitrijev S, Pensl G, Stesmans A, Zhong L
1365 - 1368	Characterization of non-equilibrium charge of MOS capacitors on p-type 4H SiC Cheong KY, Dimitrijev S, Han J
1369 - 1372	Structural and electronic properties of the 6H-SiC(0001)/Al2O3 interface prepared by atomic layer deposition Seyller T, Gao K, Ley L, Ciobanu F, Pensl G, Tadich A, Riley JD, Leckey RCG
1373 - 1376	Development of sol-gel MgO thin films for SiC insulation applications Bondoux C, Prene P, Belleville P, Guillet F, Jerisian R
1377 - 1380	Effect of in-situ chemical surface treatments on AlN/SiC interfacial contamination Stodilka DO, Gila BP, Abernathy CR, Lambers E, Ren F, Pearton SJ
1381 - 1384	Comparison of the electrical channel properties between dry- and wet-oxidized 6H-SiC MOSFETs investigated by Hall effect Laube M, Pensl G, Lee KK, Ohshima T
1385 - 1388	Development of 10 kV 4H-SiC power DMOSFETs Ryu SH, Agarwal A, Krishnaswami S, Richmond J, Palmour J
1389 - 1392	Static and dynamic characterization of 20A, 600V SiC MOS-enhanced JFET Hanna E, Chang HR, Radun AV, Zhang Q, Gomez M
1393 - 1396	Self-aligned short-channel vertical power DMOSFETs in 4H-SiC Matin M, Saha A, Cooper JA
1397 - 1400	Fabrication of double implanted (0001) 4H-SiC MOSFETs by using pyrogenic re-oxidation annealing Kosugi R, Kiritani N, Suzuki K, Yatsuo T, Adachi K, Fukuda K
1401 - 1404	A P-channel MOSFET on 4H-SiC Han JS, Cheong KY, Dimitrijev S, Laube M, Pensl G
1405 - 1408	Relationship between the current direction in the inversion layer and the electrical characteristics of metal-oxide-semiconductor field effect transistors on 3C-SiC Ohshima T, Lee KK, Ishida Y, Kojima K, Tanaka Y, Takahashi T, Yoshikawa M, Okumura H, Arai K, Kamiya T
1409 - 1412	4H-SiC MOSFETs with a novel channel structure (sandwiched channel MOSFET) Kaido J, Kimoto T, Suda J, Matsunami H
1413 - 1416	930V, 170m Omega.cm(2) lateral two-zone RESURF MOSFETs in 4H-SiC with NO annealing Wang W, Banerjee S, Chow TP, Gutmann RJ
1417 - 1420	4H-SiC MOSFETs on C(000(-),1) face with inversion channel mobility of 127cm(2)/Vs Fukuda K, Kato M, Senzaki J, Kojima K, Suzuki T
1421 - 1424	Fabrication of 4H-SiC double-epitaxial MOSFETs Harada S, Okamoto M, Yatsuo T, Adachi K, Suzuki K, Suzuki S, Fukuda K, Arai K
1425 - 1428	Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O) Gudjonsson G, Olafsson HO, Sveinbjornsson EO
1429 - 1432	High channel mobilities of MOSFETs on highly-doped 4H-SiC (11-20) face by oxidation in N2O ambient Kanzaki Y, Kinbara H, Kosugi H, Suda J, Kimoto T, Matsunami H
1433 - 1436	Benefits of high-k dielectrics in 4H-SIC trench MOSFETs Wright NG, Poolamai N, Vassilevski K, Horsfall AB, Johnson CM
1437 - 1440	Simulation study of 4H-SiC junction-gated MOSFETs from 300 K to 773 K Lee HS, Koo SM, Zetterling CM, Danielsson E, Domeij M, Ostling M
1441 - 1444	Evaluation of trench oxide protection techniques on ultra high voltage (10 kV) 4H-SiC UMOSFETs Rashid SJ, Mihaila A, Udrea F, Malhan RK, Amaratunga G
1445 - 1448	SiC JMOSFETs for high-temperature stable circuit operation Koo SM, Zetterling CM, Lee HS, Ostling M
1451 - 1456	Advanced processing techniques for silicon carbide MEMS and NEMS Zorman CA, Mehregany M
1457 - 1462	Microscopic structure and electrical activity of 4H-SIC/SiO2 interface defects : an EPR study of oxidized porous SiC von Bardeleben HJ, Cantin JL, Shishkin Y, Devaty RP, Choyke WJ
1463 - 1466	Porous silicon carbide as a membrane for implantable biosensors Rosenbloom AJ, Shishkin Y, Sipe DM, Ke Y, Devaty RP, Choyke WJ
1467 - 1470	Triangular pore formation in highly doped n-type 4H SIC Shishkin Y, Choyke WJ, Devaty RP
1471 - 1474	Porous structure of anodized p-type 6H SiC Shishkin Y, Ke Y, Devaty RP, Choyke WJ
1475 - 1478	Vibrational and emission properties of porous 6H-SiC Rossi AM, Ballarini V, Ferrero S, Giorgis F
1479 - 1482	Porous SiC for HT chemical sensing devices: an assessment of its thermal stability Bai J, Dhanaraj G, Gouma P, Dudley M, Mynbaeva M
1483 - 1486	SiC base micro-probe for myocardial ischemia monitoring Pascual J, Valvo F, Godignon P, Aguilo J, Millan J, Camassel J, Mestres N
1487 - 1490	Electrical characterisation of the gamma and UV irradiated epitaxial 1.2 kV 4H-SiC PiN diodes Wolborski M, Bakowski M, Klamra W
1491 - 1494	Demonstration of the first 4H-SiC metal-semiconductor-metal ultraviolet photodetector Wu Z, Xin X, Yan F, Zhao JH
1495 - 1498	Towards the fabrication and measurement of high sensitivity SiC-UV detectors with oxide ramp termination Brezeanu G, Godignon P, Dimitrova E, Raynaud C, Planson D, Mihaila A, Udrea F, Milian J, Amaratunga G, Boianceanu C
1499 - 1502	Hydrogen gas sensors using 3C-SiC/Si epitaxial layers Fawcett TJ, Wolan JT, Myers RL, Walker J, Saddow SE
1503 - 1506	Electrical and optical characterization of electron irradiated X rays detectors based on 4H-SiC epitaxial layers Le Donne A, Binetti S, Acciarri M, Castaldini A, Nava F, Cavallini A, Pizzini S
1507 - 1510	Substrate bias amplification of a SiC junction field effect transistor with a catalytic gate electrode Nakagomi S, Takahashi M, Kokubun Y, Uneus L, Savage S, Wingbrant H, Andersson M, Lundstrom I, Lofdahl M, Spetz AL
1511 - 1514	Development of 3C-SiC SOI structures using Si on polycrystalline SiC wafer bonded substrates Myers RL, Saddow SE, Rao S, Hobart KD, Fatemi M, Kub FJ
1515 - 1518	Formation of 3C-SiC films embedded in SiO2 by sacrificial oxidation Panknin D, Godignion P, Mestres N, Polychroniadis E, Stoemenos J, Ferro G, Pezoldt J, Skorupa W
1519 - 1522	Young's modulus and residual stress of polycrystalline 3C-SiC films grown by LPCVD and measured by the load-deflection technique Fu XA, Dunning J, Zorman CA, Mehregany M
1523 - 1526	Characterization of polycrystalline SiC thin films for MEMS applications using surface micromachined devices Dunning J, Fu XA, Rajgopal S, Mehregany M, Zorman CA
1527 - 1530	Reaction bonding of microstructured silicon carbide using polymer and silicon thin film Rajanna K, Tanaka S, Itoh T, Esashi M
1531 - 1534	Fabrication of suspended nanomechanical structures from bulk 6H-SiC substrates Huang XMH, Feng XL, Prakash MK, Kumar S, Zorman CA, Mehregany M, Roukes ML
1537 - 1540	Sublimation growth of bulk AIN crystals: process temperature and growth rate Epelbaum BM, Bickermann M, Winnacker A
1541 - 1544	Structural, optical, and electrical properties of bulk AlN crystals grown by PVT Bickermann M, Epelbaum BM, Winnacker A
1545 - 1548	Experimental and theoretical analysis of sublimation growth of bulk AlN crystals Mokhov E, Smirnov S, Segal A, Bazarevskiy D, Makarov Y, Ramm M, Helava H
1549 - 1552	X-ray photoelectron spectroscopy of nitride layer on SiC by thermal nitridation using NH3 YingShen L, Hashimoto S, Abe K, Hayashibe R, Yamagami T, Nakao M, Kamimura K
1553 - 1556	Plasma-assisted molecular beam epitaxial growth of AlN films on vicinal sapphire (0001) substrates Shen XQ, Okumura H
1557 - 1560	Growth of GaN/AlN quantum dots on SiC(000(1)over-bar) by plasma-assisted MBE Gogneau N, Fossard F, Monroy E, Monnoye S, Mank H, Daudin B
1561 - 1564	Control of the 2D/3D transition of cubic GaN/AlN nanostructures on 3C-SiC epilayers Founta S, Gogneau N, Martinez-Guerrero E, Ferro G, Monteil Y, Daudin B, Mariette H
1565 - 1568	In-situ monitoring of AlN crystal growth on 6H-SiC by the use of a pyrometer Suzuki T, Inushima T
1569 - 1572	Towards high-quality AlN/SiC hetero-interface by controlling initial processes in molecular-beam epitaxy Onojima N, Kaido J, Suda J, Kimoto T, Matsunami H
1573 - 1576	Growth of n-face polarity III-nitride heterostructures on C-face 4H-SiC by plasma-assisted MBE Monroy E, Sarigiannidou E, Fossard F, Enjalbert F, Gogneau N, Bellet-Amalric E, Brault J, Rouviere JL, Dang LS, Monnoye S, Mank H, Daudin B
1577 - 1580	Direct growth of high quality GaN by plasma assisted molecular beam epitaxy on 4H-SiC substrates Fossard F, Brault J, Gogneau N, Monroy E, Enjalbert F, Dang LS, Bellet-Amalric E, Monnoye S, Mank H, Daudin B
1581 - 1584	GaN laterally overgrown on sapphire by low pressure hydride vapor phase epitaxy Napierala J, Martin D, Buhlmann HJ, Gradecak S, Ilegems M
1585 - 1588	Growth and field emission of GaN nanowires Kim TY, Lee SH, Mo YH, Nahm KS
1589 - 1592	Intraband transitions in GaN/AlN quantum wells grown on sapphire (0001) and 6H-SiC substrates Helman A, Tchernycheva M, Moumanis K, Lusson A
1593 - 1596	Photoluminescence of GaN/AlN quantum dots grown on SiC substrates Fossard F, Gogneau N, Monroy E, Dang LS, Monnoye S, Mank H, Daudin B
1597 - 1600	Growth of GaN films on porous 4H-SiC substrate by metal-organic chemical vapor deposition Jeong JK, Song HK, Um MY, Kim HJ, Seo HC, Kim HJ, Yoon E, Hwang CS, Kim HJ
1601 - 1604	X-ray diffraction imaging of GaN-based heterostructures on SiC Poust B, Feichtinger P, Sandhu R, Smorchkova I, Heying B, Block T, Wojtowicz M, Goorsky M
1605 - 1608	Effects of crystallinity on hydrogen exfoliation of GaN layers Hayashi S, Poust B, Heying B, Goorsky MS
1609 - 1612	Radiotracer spectroscopy on group II acceptors in GaN Albrecht F, Pasold G, Grillenberger J, Reislohner U, Dietrich M, Witthuhn W
1613 - 1616	Properties of the 3.4 eV luminescence band in GaN and its relation to stacking faults Skromme BJ, Chen L, Mikhov MK, Yamane H, Aoki M, DiSalvo FJ
1617 - 1620	An ab initio study of intrinsic stacking faults in GaN Iwata HP, Oberg S, Briddon PR
1621 - 1624	AlGaN/GaNHEMT structures grown on SiCOI wafers obtained by the Smart CutTM technology. Larheche H, Faure B, Richtarch C, Letertre F, Langer R, Bove P
1625 - 1628	Thermal characterisation of AlGaN/GaN HEMTs using micro-Raman scattering spectroscopy and pulsed I-V measurements Aubry R, Jacquet JC, Dua C, Gerard H, Dessertenne B, di Forte-Poisson MA, Cordier Y, Delage SL
1629 - 1632	High CW power 0.3 mu m gate AlGaN/GaN HEMTs grown by MBE on sapphire Desmaris V, Eriksson J, Rorsman N, Zirath H
1633 - 1636	Self-aligned N plus polysilicon-gate GaN MOSFETs Matocha K, Chow TP, Gutmann RJ