Materials Science Forum

Materials Science Forum, Vol.433-4 Entire volume, number list

ISSN: 0255-5476 (Print)

In this Issue (240 articles)

3 - 8	Properties of free-standing 3C-SiC monocrystals grown on undulant-Si(001) substrate Nagasawa H, Yagi K, Kawahara T, Hatta N
9 - 12	Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling Wellmann PJ, Herro Z, Selder M, Durst F, Pusche R, Hundhausen M, Ley L, Winnacker A
13 - 16	Stress analysis of SiC bulk single crystal growth by sublimation method Nishizawa SIC, Michikawa Y, Kato T, Hirose F, Oyanagi N, Arai K
17 - 20	On the early stages of sublimation growth of 4H-SiC using 8 degrees off-oriented substrates Schulz D, Lechner M, Rost HJ, Siche D, Wollweber J
21 - 24	Growth of high quality p-type 4H-SiC substrates by HTCVD Sundqvist B, Ellison A, Jonsson A, Henry A, Hallin C, Bergman JP, Magnusson B, Janzen E
25 - 28	Towards a continuous feeding of the PVT growth process: an experimental investigation Chaussende D, Baillet F, Charpentier L, Pernot E, Pons M, Madar R
29 - 32	Growth of faceted free-spreading SiC bulk crystals by sublimation Mokhov EN, Ramm MG, Ramm MS, Roenkov AD, Vodakov YA, Karpov SY, Makarov YA, Helava H
33 - 38	HTCVD grown semi-insulating SiC substrates Ellison A, Magnusson B, Son NT, Storasta L, Janzen E
39 - 44	Sublimation-grown semi-insulating SIC for high frequency devices Muller SG, Brady MF, Brixius WH, Glass RC, Hobgood HM, Jenny JR, Leonard RT, Malta DP, Powell AR, Tsvetkov VF, Allen ST, Palmour JW, Carter CH
45 - 50	Defects in semi-insulating SiC substrates Son NT, Magnusson B, Zolnai Z, Ellison A, Janzen E
51 - 54	Preparation of semi-insulating silicon carbide by vanadium doping during PVT bulk crystal growth Bickermann M, Hofmann D, Straubinger TL, Weingartner R, Winnacker A
55 - 58	PVT growth of p-type and semi-insulating 2-inch 6H-SiC crystals Rasp M, Straubinger TL, Schmitt E, Bickermann M, Reshanov S, Sadowski H
59 - 62	Photoluminescence and thermally stimulated luminescence in semi-insulating SiC Suleimanov YM, Lulu S, Tarasov I, Ostapenko S, Heydemann VD, Roth MD, Kordina O, MacMillan MF
63 - 66	Growth of phosphorus-doped 6H-SiC single crystals by the modified Lely method Semmelroth K, Schmid F, Karg D, Pensl G, Maier M, Greulich-Weber S, Spaeth JM
67 - 70	Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of radial temperature gradient Herro Z, Bickermann M, Epelbaum BM, Masri P, Winnacker A
71 - 74	Uniformization of radial temperature gradient in sublimation growth of SiC Tanaka H, Nishiguchi T, Sasaki M, Ohshima S, Nishino S
75 - 78	Effect of ambient on 4H-SiC bulk crystals grown by sublimation Ciechonski RR, Yakimova R, Syvajarvi M, Janzen E
79 - 82	Continuous growth of SiC single crystal from ultrafine particle precursor Yamada Y, Sagawa K, Nakashima S
83 - 86	Defect reduction in SiC crystals grown by the modified Lely method Anikin MM, Pons M, Pernot E, Madar R
87 - 90	A study of HTCVD renewing of the SiC polycrystalline source during the PVT process Charpentier L, Baillet F, Chaussende D, Pernot E, Pons M, Madar R
91 - 94	Properties of nitrogen-doped 4H-SiC single crystals grown by physical vapour transport Rost HJ, Irmscher K, Doerschel J, Siche D, Schulz D, Wollweber J
95 - 98	Morphological features of sublimation-grown 4H-SiC layers Schulz D, Doerschel J
99 - 102	Graphitization of the seeding surface during the heating stage of SiCPVT bulk growth Drachev RV, Cherednichenko DI, Khlebnikov II, Khlebnikov YI, Sudarshan TS
103 - 106	Heat transfer modeling of a new crystal growth process Baillet F, Chaussende D, Charpentier L, Pernot E, Pons M, Madar R
107 - 110	Optimization of chamber design and rapid thermal processing regimes for SiC substrates by temperature and thermal stress distribution Agueev OA, Svetlichnyi AM, Klovo AG, Kocherov AN, Izotovs DA
111 - 114	Crystal interface shape simulation during SiC sublimation growth Bottcher K, Schulz D
115 - 118	Growth at high rates and characterization of bulk 3C-SiC material Ferro G, Balloud C, Juillaguet S, Vicente P, Camassel J, Monteil Y
119 - 122	Comparison between ar and N-2 for high-temperature treatment of 4H-SiC substrates Younes G, Ferro G, Jacquier C, Dazord J, Monteil Y
125 - 130	SiC epitaxy on non-standard surfaces Matsunami H, Kimoto T
131 - 136	4H-SiC epitaxial growth for high-power devices Tsuchida H, Kamata I, Jikimoto T, Miyanagi T, Izumi K
137 - 140	Predictions of nitrogen doping in SiC epitaxial layers Danielsson O, Forsberg U, Janzen E
141 - 144	Experiment and modeling of the large-area etching and growth rate of epitaxial SiC Meziere J, Pons M, Dedulle JM, Blanquet E, Ferret P, Di Cioccio L, Billon T
145 - 148	Chemical vapor deposition of n-type SiC epitaxial layers using phosphine and nitrogen as the precursors Wang RJ, Bhat IB, Chow TP
149 - 152	Wide-area homoepitaxial growth of 6H-SiC on nearly on-axis (0001) by chemical vapor deposition Nakamura S, Kimoto T, Matsunami H
153 - 156	Nitrogen delta doping in 4H-SiC epilayers Henry A, Storasta L, Janzen E
157 - 160	Temperature effects in SiC epitaxial growth Oliver JD
161 - 164	Fast epitaxial growth of high-quality 4H-SiC by vertical hot-wall CVD Fujihira K, Kimoto T, Matsunami H
165 - 168	Characterization of homoepitaxial 4H-SiC layer grown from silane/propane system Sartel C, Bluet JM, Souliere V, El-Harrouni I, Monteil Y, Mermoux M, Guillot G
169 - 172	Origin and behaviour of deep levels in sublimation growth of 4H-SiC layers Syvajarvi M, Yakimova R, Ciechonski RR, Davydov D, Lebedev AA, Janzen E
173 - 176	Vacancies in As-grown and electron-irradiated 4H-SiC epilayers investigated by positron annihilation Dannefaer S, Avalos V, Syvajarvi M, Yakimova R
177 - 180	Computational modeling for the development of CVD SiC epitaxial growth processes Melnychuk G, Koshka Y, Yingquan S, Mazzola M, Pittman CU
181 - 184	Is Al-Si a good melt for the low-temperature LPE of 4H-SiC? Jacquier C, Ferro G, Cauwet F, Viala JC, Monteil Y
185 - 188	Uniformity improvement in SiC epitaxial growth by horizontal hot-wall CVD Saitoh H, Kimoto T, Matsunami H
189 - 192	Features of sublimation growth on porous SiC substrates: Characteristics and properties of porous and epitaxial layers Savkina NS, Shuman VB, Ratnikov VV, Rogachev AY, Lebedev AA
193 - 196	The effect of thermal gradients on SiC wafers Hallin C, Joelsson T, Janzen E
197 - 200	Complete micropipe dissociation in 4H-SiC(03(3)over-bar8) epitaxial growth and its impact on reverse characteristics of Schottky barrier diodes Kimoto T, Danno K, Fujihira K, Shiomi H, Matsunami H
201 - 204	Epitaxial growth of 6H-SiC by a vapor liquid solid method Ferret P, Leray A, Feuillet G, Lyan P, Pudda C, Billon T
205 - 208	Growth of p-type SiC layer by sublimation epitaxy Ohta S, Furusho T, Takagi H, Ohshima S, Nisino S
209 - 212	Control of pendeo epitaxial growth of 3C-SiC on silicon substrate Okui Y, Jacob C, Ohshima S, Nishino S
213 - 216	Characterization of 3C-SiC films grown on 4H-and 6H-SiC substrate mesas during step-free surface hetero-epitaxy Neudeck PG, Powell JA, Spry DJ, Trunek AJ, Huang XR, Vetter WM, Dudley M, Skowronski M, Liu JQ
217 - 220	Growth of SiC hetero-epitaxial films by pulsed-laser deposition - Laser frequency dependence Kusumori T, Muto H
221 - 224	Thin film SiC epitaxy on Si(111) from acetylene precursor De Renzi V, Biagi R, del Pennino U
225 - 228	Preparation of SiC/Si(111) hetero-epitaxial junctions by PLD and crystallographic and I-V characterization Muto H, Asano T, Kusumori T
229 - 232	Hetero-epitaxial growth of 3C-SiC on carbonized silicon substrates Shimizu H, Hisada K
233 - 236	High-resolution XRD investigations of the strain reduction in 3C-SiC thin films grown on Si(111) substrates Weih P, Cimalla V, Forster C, Pezoldt J, Stauden T, Spiess L, Romanus H, Hermann M, Eickhoff M, Masri P, Ambacher O
237 - 240	SiC synthesis by fullerene free jets on Si(111) at low temperatures Aversa L, Verucchi R, Pedio M, Iannotta S
241 - 244	Production of 8-inch SiC wafer by hybridization of single and polycrystalline SiC wafers Murata K, Fujioka N, Chinone Y, Nishino S
247 - 252	Synchrotron White Beam X-ray Topography and High Resolution Triple Axis X-ray Diffraction studies of defects in SiC substrates, epilayers and devices Dudley M, Huang XR, Vetter WM, Neudeck PG
253 - 256	Stacking fault formation in highly doped 4H-SiC epilayers during annealing Chung HJ, Liu JQ, Henry A, Skowronski M
257 - 260	Lattice dynamics of 4H-SiC by inelastic x-ray scattering Serrano J, Strempfer J, Cardona M, Schwoerer-Bohning M, Requardt H, Lorenzen M, Stojetz B, Pavone P, Choyke WJ
261 - 264	Conditions for micropipe dissociation by 4H-SiC CVD growth Kamata I, Tsuchida H, Jikimoto T, Miyanagi T, Izumi K
265 - 268	Investigation of defects in 4H-SiC by synchrotron topography, Raman spectroscopy imaging and photoluminescence spectroscopy imaging Pernot E, El Harrouni I, Mermoux M, Bluet JM, Anikin M, Chaussende D, Pons M, Madar R
269 - 272	Doping-related strain in n-doped 4H-SiC crystals Jacobson H, Birch J, Lindefelt U, Hallin C, Henry A, Yakimova R, Janzen E
273 - 276	Stacking faults in 3C-SiC relax lattice deformation Hatta N, Yagi K, Kawahara T, Nagasawa H
277 - 280	Characteristics of planar defects in shallow trenches related to the presence of micropipes Vouroutzis N, Syvajarvi M, Stoemenos J, Yakimova R
281 - 284	Orientation-dependent defect formation in silicon carbide epitaxial layers Yakimova R, Syvajarvi M, Iakimov T, Okunev AO, Udal'tsov VE, Janzen E
285 - 288	Comparative TEM investigation of MBE and RTCVD conversion of Si into SiC Morales FM, Molina SI, Araujo D, Cimalla V, Pezoldt J
289 - 292	High-accuracy lattice constant measurements of electron-irradiated 6H-SiC single crystals Seitz C, Rempel AA, Magerl A, Gomm M, Sprengel W, Schaefer HE
293 - 296	Characterization of 3C-SiC/6H-SiC heterostructures grown by vacuum sublimation Savkina NS, Strel'chuk AM, Sorokin LM, Mosina GN, Tregubova AS, Solov'ev VV, Lebedev AA
297 - 300	Dynamics of 4H-SiC plasticity Karpov SY, Kulik AV, Ramm MS, Makarov YN
301 - 304	Time-resolved photoluminescence of deep centers in semi-insulating 4H-SiC Magnusson B, Bergman JP, Janzen E
305 - 308	Identification of dumb-bell shaped interstitials in electron irradiated 6H SiC by photoluminescence spectroscopy Steeds JW, Evans GA, Furkert S, Ley L, Hundhausen M, Schulz N, Pensl G
309 - 312	Photoluminescence up-conversion processes in SiC Wagner M, Ivanov IG, Storasta L, Bergman JP, Magnusson B, Chen WM, Janzen E
313 - 316	New photoluminescence features in 4H-SiC induced by hydrogenation Koshka Y, Mazzola MS, Wyatt JL
317 - 320	Analysis of extended defects in 6H-SiC using photoluminescence and light beam induced current spectroscopy Binetti S, Le Donne A, Acciarri M, Cerminara M, Pizzini S
321 - 324	Donor-acceptor pair luminescence in 4H-SiC doped with nitrogen and aluminum Ivanov IG, Ellison A, Janzen E
325 - 328	Raman excitation profiles of 3C-, 4H-, 6H-, 15R-, and 21R-SiC Pusche R, Hundhausen M, Ley L
329 - 332	Infrared optical properties of 3C, 4H and 6H silicon carbide Lindquist OPA, Arwin H, Henry A, Jarrendahl K
333 - 336	Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC Weingartner R, Bickermann M, Herro Z, Kunecke U, Sakwe SA, Wellmann PJ, Winnacker A
337 - 340	Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals Bickermann M, Weingartner R, Herro Z, Hofmann D, Kunecke U, Wellmann PJ, Winnacker A
341 - 344	Determination of exciton capture cross-sections of neutral nitrogen donor on cubic and hexagonal sites in n-type (N) 6H-SiC Weingartner R, Albrecht A, Wellmann PJ, Winnacker A
345 - 348	D-II PL intensity dependence on dose, implantation temperature and implanted species in 4H-and 6H-SiC Carlsson FHC, Sridhara SG, Hallen A, Bergman JP, Janzen E
349 - 352	Application of UV scanning photoluminescence spectroscopy for minority carrier lifetime mapping Masarotto L, Bluet JM, El Harrouni I, Guillot G
353 - 356	Raman imaging analysis of SiC wafers Mermoux M, Crisci A, Baillet F
357 - 360	Simple method for mapping optical defects in insulating silicon carbide wafers Mier M, Boeckl J, Roth M, Balkas C, Nelson M
361 - 364	Non-destructive SiC wafer evaluation based on an optical stress technique Ma XY, Parker M, Ma YF, Kubota T, Sudarshan TS
365 - 370	Electrical and optical characterization of SiC Pensl G, Schmid F, Ciobanu F, Laube M, Reshanov SA, Schulze N, Semmelroth K, Nagasawa H, Schoner A, Wagner G
371 - 374	Evidence for two charge states of the S-center in ion-implanted 4H-SiC David ML, Alfieri G, Monakhov EV, Hallen A, Barbot JF, Svensson BG
375 - 378	Activation study of implanted N+ in 6H-SiC by scanning capacitance microscopy Raineri V, Calcagno L, Giannazzo F, Goghero D, Musumeci F, Roccaforte F, La Via F
379 - 382	Majority traps observed in H+- or He+-implanted Al-doped 6H-SiC by admittance and deep level transient spectroscopy Reshanov SA, Klettke O, Pensl G
383 - 386	On the unusual nature of a DLTS-detected defect in bulk n-type 6H-SiC van Wyk E, Leitch AWR
387 - 390	High temperature deep level transient spectroscopy investigations of n-type 4H-SiC epitaxial layers Schoner A, Fujihira K, Kimoto T, Matsunami H
391 - 394	Modeling of lattice heat conductivity and thermopower in SiC considering the four-phonon scattering process Velmre E, Udal A
395 - 398	Improved p-type conductivity in heavily Al-doped SiC by ion-beam-induced nano-crystallization Heera V, Madhusoodanan KN, Mucklich A, Panknin D, Skorupa W
399 - 402	Transport investigation of low-nitrogen-doped 6H-SiC ion-implantation vs. in situ doping Terziyska P, Pernot J, Contreras S, Robert JL, Di Cioccio L, Billon T
403 - 406	From transport measurements to infrared reflectance spectra of n-type doped 4H-SiC layer stacks Pernot J, Camassel J, Peyre H, Contreras S, Robert JL
407 - 410	Impact of phonon drag effect on Seebeck coefficient in p-6H-SiC: Experiment and simulation Bikbajevas V, Grivickas V, Stolzer M, Velmre E, Udal A, Grivickas P, Syvajarvi M, Yakimova R
411 - 414	Parameters of electron-hole scattering in silicon carbide Mnatsakanov TT, Levinshtein ME, Ivanov PA, Tandoev AG, Yurkov SN, Palmour JW, Singh R
415 - 418	Defect evolution in proton-irradiated 4H SiC investigated by deep level transient spectroscopy Leveque P, Martin D, Svensson BG, Hallen A
419 - 422	Electrical characterization of Ni/porous SiC/n-SiC structure Grekov A, Soloviev S, Das T, Sudarshan TS
423 - 426	Correlation between electrical and optical mapping of boron related complexes in 4H-SiC Storasta L, Magnusson B, Henry A, Linnarsson MK, Bergman JP, Janzen E
427 - 430	Investigation of p-3C-SiC/n+-6H-SiC heterojunctions with low doped p-3C-SiC region Lebedev AA, Strel'chuk AM, Savkina NS, Bogdanova EV, Tregubova AS, Kuznetsov AN, Davydov DV
431 - 434	Mapping on bulk and epitaxy layer 4H-SiC Ono R, Yatsuo T, Okushi H, Arai K
435 - 438	Breakdown electric field in 4H-SiC epitaxial layer grown on various net-doping substrates Ono R, Fujimaki M, Hon-Joo N, Tanimoto S, Shinohe T, Yatsuo T, Okushi H, Arai K
439 - 442	Electron-induced damage effects in 4H-SiC Schottky diodes Castaldini A, Cavallini A, Nava F, Fuochi PG, Vanni P
443 - 446	Measurement of Hall mobility in 4H-SiC for improvement of the accuracy of the mobility model in device simulation Hatakeyama T, Watanabe T, Kushibe M, Kojima K, Imai S, Suzuki T, Shinohe T, Tanaka T, Arai K
447 - 450	Real relationship between acceptor density and hole concentration in Al-implanted 4H-SiC Matsuura H, Sugiyama K, Nishikawa K, Nagata T, Fukunaga N
451 - 454	Electrical characteristics of plasma-enhanced chemical vapor deposited silicon carbide thin films Pham HTM, Akkaya T, de Boer CR, Sarro PM
455 - 458	Correlation between defects and electrical properties of 4H-SiC based Schottky diodes Scaltrito L, Porro S, Giorgis F, Mandracci P, Cocuzza M, Pirri CF, Ricciardi C, Ferrero S, Richieri G, Sgorlon C, Merlin L, Cavallini A, Castaldini A
459 - 462	Electrical characterization of erbium-implanted 4H-SiC epilayers Reshanov SA, Klettke O, Pensl G, Choyke WJ
463 - 466	Deep levels in as-grown 4H-SiC epitaxial layers and their correlation with CVD parameters Pintilie I, Pintilie L, Irmscher K, Thomas B
467 - 470	Electrical and optical study of 4H-SiC CVD epitaxial layers irradiated with swift heavy ions Kalinina E, Kholujanov G, Onushkin G, Davydov D, Strel'chuk A, Zubrilov A, Hallen A, Konstantinov A, Skuratov V, Stano J
471 - 476	Identification and annealing of common intrinsic defect centers Bockstedte M, Heid M, Mattausch A, Pankratov O
477 - 480	Polytype-dependent vacancy annealing studied by positron annihilation Kawasuso A, Yoshikawa M, Maekawa M, Itoh H, Chiba T, Redmann F, Krause-Rehberg R, Weidner M, Frank T, Pensl G
481 - 485	Nitrogen-vacancy complexes in SiC - Final annealing products of the silicon vacancy? Gerstmann U, Rauls E, Frauenheim T, Overhof H
487 - 490	A deep erbium-related bandgap state in 4H silicon carbide Pasold G, Albrecht F, Grillenberger J, Grossner U, Hulsen C, Sielemann R, Witthuhn W
491 - 494	Theoretical study of antisite aggregation in alpha-SiC Rauls E, Gali A, Deak P, Frauenheim T
495 - 498	EPR studies of interface defects in n-type 6H-SiC/SiO2 using porous SiC von Bardeleben HJ, Cantin JL, Mynbaeva M, Saddow SE
499 - 502	Electrical and multifrequency EPR study of nitrogen and carbon antisite-related native defect in n-type As-grown 4H-SiC Kalabukhova EN, Lukin SN, Mitchel WC
503 - 506	Phosphorus-related shallow and deep defects in 6H-SiC Baranov PG, Ilyin IV, Mokhov EN, von Bardeleben HJ, Cantin JL
507 - 510	EPR study of electron irradiation-induced defects in semi-insulating SiC : V von Bardeleben HJ, Cantin JL, Reshanov SA, Rastegaev VP
511 - 514	Calculation of hyperfine constants of defects in 4H-SiC Gali A, Deak P, Son NT, Janzen E, von Bardeleben HJ, Monge JL
515 - 518	A simple model of 3d impurities in cubic silicon carbide Parfenova II, Yuryeva EI, Reshanov SA, Rastegaev VP, Ivanovskii AL
519 - 522	Effective mass of electrons in quantum-well-like stacking-fault gap states in silicon carbide Iwata H, Lindefelt U, Oberg S, Briddon PR
523 - 526	A shallow acceptor complex in 4H-SiC: AlSiNCAlSi Deak P, Aradi B, Gali A, Gerstmann U, Choyke WJ
527 - 530	Electronic structure of twin boundaries in 3C-SiC, Si and diamond Iwata H, Lindefelt U, Oberg S, Briddon PR
531 - 534	Electronic properties of stacking faults in 15R-SiC Iwata H, Lindefelt U, Oberg S, Briddon PR
535 - 538	A cause for SiC/SiO2 interface states: The site selection of oxygen in SiC Deak P, Gali A, Hajnal Z, Frauenheim T, Son NT, Janzen E, Choyke WJ, Ordejon P
539 - 542	Angle-resolved studies of SiO2/SiC samples Johansson LI, Virojanadara C, Eickhoff T, Drube W
543 - 546	Positron annihilation studies of defects at the SiO2/SiC interface Dekker J, Saarinen K, Olafsson HO, Sveinbjornsson EO
547 - 550	A study of the shallow electron traps at the 4H-SiC/SiO2 interface Olafsson HO, Sveinbjornsson EO, Rudenko TE, Kilchytska VI, Tyagulski IP, Osiyuk IN
551 - 554	Traps at the interface of 3C-SiC/SiO2-MOS-structures Ciobanu F, Pensl G, Nagasawa H, Schoner A, Dimitrijev S, Cheong KY, Afanas'ev VV, Wagner G
555 - 558	Study of the wet re-oxidation annealing of SiO2/4H-SiC(0001) interface properties by AR-XPS measurements Ekoue A, Renault O, Billon T, Di Cioccio L, Guillot G
559 - 562	Structural defects at SiO2/SiC interfaces detected by positron annihilation Maekawa M, Kawasuso A, Yoshikawa M, Itoh H
563 - 566	Reduction of interface trapped density of SiO2/4H-SiC by oxidation of atomic oxygen Kosugi R, Fukuda K, Arai K
567 - 570	High inversion channel mobility of MOSFET fabricated on 4H-SiC C(000(1)over-bar) face using H-2 post-oxidation annealing Fukuda K, Senzaki J, Kojima K, Suzuki T
571 - 574	Cubic SiC surface structure studied by X-ray diffraction D'Angelo M, Enriquez H, Aristov VY, Soukiassian P, Renaud G, Barbier A, Chiang S, Semond F, Di Cioccio L, Billion T
575 - 578	Adsorption of toluene on Si(100) from first principles Costanzo F, Silvestrelli P, Sbraccia C, Ancilotto F
579 - 582	Atomic structure of Si-rich 3C-SiC(001)-(3x2): a photoelectron diffraction study Tejeda A, Michel EG, Dunham D, Soukiassian P, Denlinger JD, Rotenberg E, Hurych ZD, Tonner B
583 - 586	Effects of initial nitridation on the characteristics of SiC-SiO2 interfaces Cheong KY, Dimitrijev S, Han J
587 - 590	Ag growth on 3C-SiC(001) c(2x2) C-terminated and c(4x2) Si-terminated surfaces Rodriguez N, D'Angelo M, Aristov VY, Soukiassian P, Lescuras A, Croti C, Pedio M, Perfetti P
591 - 594	Modelling the formation of nano-sized SiC on Si Safonov KL, Schmidt AA, Trushin YV, Kulikov DV, Cimalla V, Pezoldt J
595 - 598	Nanostructure formation on a surface of 6H-SiC by laser radiation Medvid A, Fedorenko L, Lytvyn P, Yusupov N
599 - 602	Theoretical investigation of adsorption of N-containing species at SiC(0001) surfaces Olander J, Larsson K
605 - 608	Electrical activation of ion-implanted nitrogen and aluminum in 4H-SiC by excimer laser annealing Tanaka Y, Tanoue H, Arai K
609 - 612	Surface properties and electrical characteristics of rapid thermal annealed 4H-SiC Bauer AJ, Rambach M, Frey L, Weiss R, Rupp R, Friedrichs P, Schorner R, Peters D
613 - 616	Effective normal field dependence of inversion channel mobility in 4H-SiC MOSFETs on the (11(2)over-bar0) face Senzaki J, Kojima K, Suzuki T, Fukuda K
617 - 620	Damage relaxation pre-activation anneal in Al-implanted SiC Bahng W, Song GH, Kim NK, Kim SC, Seo KS, Kim HW, Kim ED
621 - 624	Electrical characterization of ion-implanted n(+)/p 6H-SiC diodes Poggi A, Nipoti R, Cardinali GC, Moscatelli F
625 - 628	High-sensitivity ion beam analytical method for studying ion-implanted SiC Battistig G, Lopez JG, Khanh NQ, Morilla Y, Respaldiza MA, Szilagyi E
629 - 632	SiC delta-doped-layer structures and DACFET Takahashi K, Kusumoto O, Uchida M, Yamashita K, Kitabatake M
633 - 636	Annealing of a vacancy-type defect and diffusion of implanted boron in 6H-SiC Ohshima T, Uedono A, Eryu O, Lee KK, Abe K, Itoh H, Nakashima K
637 - 640	Gettering effect with Al implanted into 4H-SiC CVD epitaxial layers Kalinina E, Kholujanov G, Sitnikova A, Kossov V, Yafaev R, Pensl G, Reshanov S, Hallen A, Konstantinov A
641 - 644	Vacancy-type defect distributions of B-11-, N-14- and Al-27-implanted 4H-SiC studied by Positron Annihilation Spectroscopy Janson MS, Slotte J, Kuznetsov AY, Saarinen K, Hallen A
645 - 648	Damage distributions induced by channeling implantation of nitrogen into 6H silicon carbide Zolnai Z, Khanh NQ, Lohner T, Ster A, Kotai E, Vickridge I, Gyulai J
649 - 652	First-principles studies of N and P dopant interactions in SiC: Implications for co-doping Rurali R, Hernandez E, Godignon P, Rebollo J, Ordejon P
653 - 656	Quantitative evaluation of implantation damage and damage recovery after room temperature ion-implantation of N+ and P+ ions in 6H-SiC Blanque S, Perez R, Zielinski M, Pernot J, Mestres N, Pascual J, Godignon P, Camassell J
657 - 660	Porous SiC: New applications through in- and out- dopant diffusion Mynbaeva M, Kuznetsov N, Lavrent'ev A, Mynbaev K, Wolan JT, Grayson B, Ivantsov V, Syrkin A, Fomin A, Saddow SE
661 - 664	Co-formation of gate electrode and ohmic contacts in SiC power MOSFETs Song GH, Bahng W, Kim N, Kim SC, Seo KS, Kim ED
665 - 668	Electrochemical etching of n-type 6H-SiC using aqueous KOH solutions Kato M, Ichimura M, Arai E, Ramasamy P
669 - 672	Single material ohmic contacts simultaneously formed on the source/p-well/gate of 4H-SiC vertical MOSFETs Kiritani N, Hoshi M, Tanimoto S, Adachi K, Nishizawa S, Yatsuo T, Okushi H, Arai K
673 - 676	Al/Ti ohmic contacts to p-type ion-implanted 6H-SiC: Mono- and two-dimensional analysis of TLM data Moscatelli F, Scorzoni A, Poggi A, Cardinali GC, Nipoti R
677 - 680	Low-frequency noise measurements as a quality indicator for ohmic contacts to n-GaN Tanuma N, Tanizaki H, Yokokura S, Matsui T, Hashiguchi S, Sikula J, Tacano M
681 - 684	Thermal stability of Pd Schottky contacts to p-type 6H-SiC Samiji ME, Venter A, Leitch AWR
685 - 688	Suppression of leakage current increase of 4H-SiC Schottky barrier diodes during high-temperature annealing by "face-to-face" arrangement Izumi S, Fujisawa H, Tawara T, Ueno K, Hiraoka M
689 - 692	The effect of plasma etching on the electrical characteristics of 4H-SiC Schottky diodes Plank NOV, Jiang LD, Gundlach AM, Cheung R
693 - 696	Use of laser interferometry and optical emission spectroscopy for monitoring the reactive ion etching of 6H-and 4H-SiC Camara N, Constantinidis G, Zekentes K
697 - 700	Diffusion-welded Al contacts to p-type SiC Korolkov O, Rang T, Syrkin A, Dmitriev V
701 - 704	Thermal etching of 6H-SiC (11(2)over-bar-0) substrate surface Nishiguchi T, Ohshima S, Nishino S
705 - 708	Schottky barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000(1)over-bar), (1(1)over-bar-00) and (1(2)over-bar-10) faces measured by I-V, C-V and internal photoemission Shigiltchoff O, Bai S, Devaty RP, Choyke WJ, Kimoto T, Hobgood D, Neudeck PG, Porter LM
709 - 712	Characteristics of Ni Schottky contacts on compensated 4H-SiC layers Kasamakova-Kolaklieva L, Yakimova R, Kakanakov R, Kakanakova-Georgieva A, Syvajarvi M, Janzen E
713 - 716	Pd-based ohmic contacts to LPE 4H-SiC with improved thermal stability Kassamakova-Kolaklieva L, Kakanakov R, Cimalla V, Hristeva N, Lepoeva G, Kuznetsov N, Zekentes K
717 - 720	Surface structure of electrochemically etched alpha-SiC substrates Mikami H, Umetani A, Hatayama T, Yano H, Uraoka Y, Fuyuki T
721 - 724	Schottky-ohmic transition in nickel silicide/SiC system: Is it really a solved problem? Calcagno L, Zanetti E, La Via F, Roccaforte F, Raineri V, Libertino S, Giannazzo F, Mauceri M, Musumeci P
725 - 728	Gate oxide with high dielectric breakdown strength after undergoing a typical power MOSFET fabrication process Tanimoto S, Kiritani N, Hoshi M, Okushi H, Arai K
731 - 736	Influence of material properties on wide-bandgap microwave power device characteristics Morvan E, Kerlain A, Dua C, Brylinski C
737 - 739	A comparison of MESFETs on different 4H-Silicon carbide semi-insulating substrates Eriksson J, Rorsman N, Zirath H, Henry A, Magnusson B, Ellison A, Janzen E
741 - 744	Performance of silicon carbide microwave MESFETs using a thin p-doped buffer layer Eriksson J, Rorsman N, Zirath H
745 - 748	RF characteristics of short-channel SiC MESFETs Honda H, Ogata M, Sawazaki H, Ono S, Arai M
749 - 752	Passivation effect on channel recessed 4H-SiC MESFETs Cha HY, Thomas CI, Koley G, Eestman LF, Spencer MG
753 - 756	4H-SiC lateral RESURF MOSFET with a buried channel structure Suzuki S, Harada S, Yatsuo T, Kosugi R, Senzaki J, Fukuda K
757 - 760	Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC Banerjee S, Chow TP, Gutmann RJ
761 - 764	Modelling of radiation response of p-channel SiC MOSFETs Lee KK, Ohshima T, Itoh H
765 - 768	Influence of depletion region length on specific on-resistance in SiC MOSFET Ohtsuka K, Tarui Y, Imaizumi M, Sugimoto H, Takami T, Ozeki T
769 - 772	4H-SiC power MOSFET blocking 1200V with a gate technology compatible with industrial applications Peters D, Schorner R, Friedrichs P, Stephani D
773 - 776	Simulation and measurement of switching characteristics of 4H-SiC buried-gate JFETs Koo SM, Domeij M, Zetterling CM, Ostling M, Forsberg U, Janzen E
777 - 780	Optimisation of a 4H-SiC enhancement mode power JFET Horsfall AB, Johnson CM, Wright NG, O'Neill AG
781 - 784	Electro-thermal simulations and measurement of silicon carbide bipolar transistors Liu W, Danielsson E, Zetterling CM, Ostling M
785 - 788	Power amplification in UHF band using SiC RF power BJTs Agarwal A, Capell C, Phan B, Milligan J, Palmour JW, Stambaugh J, Bartlow H, Brewer K
789 - 791	Demonstration of monolithic Darlington transistors in 4H-SiC Tang Y, Chow TP
793 - 796	High-voltage modular switch based on SiCVJFETs - First results for a fast 4.5kV/1.2 Omega configuration Friedrichs P, Mitlehner H, Schorner R, Dohnke KO, Stephani D
797 - 800	Design and technology considerations for a RF BJT in SiC Bakowski M, Ericsson P, Harris C, Konstantinov A, Savage S, Schoner A
801 - 804	Analysis of unipolar and bipolar cascoded switches with MOS gate Bakowski M
805 - 812	SiC power devices: How to be competitive towards Si-based solutions? Rupp R, Zverev I
813 - 818	SiC power devices on QUASIC and SiCOI Smart-Cut (R) substrates: First demonstrations Letertre F, Daval N, Templier F, Bano E, Planson D, Di Ciocco L, Jalaguier E, Bluet JM, Billon T, Madar R, Chante JP
819 - 822	Low power dissipation SiC Schottky rectifiers with a dual-metal planar structure Roccaforte F, La Via F, La Magna A, Di Franco S, Raineri V
823 - 826	Characterisation of the high temperature performance of 4H-SiC Schottky barrier diodes Blasciuc-Dimitriu C, Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG
827 - 830	Comparison between different Schottky diode edge termination structures: Simulations and experimental results La Via F, Roccaforte F, Di Franco S, Raineri V, Moscatelli F, Scorzoni A, Cardinali GC
831 - 834	Optimum design of a SiC Schottky barrier diode considering reverse leakage current due to a tunneling process Hatakeyama T, Kushibe M, Watanabe T, Imai S, Shinohe T
835 - 838	Characterization of the forward-conduction of 4H-SiC planar junction diode Ohyanagi T, Ohno T, Amemiya K, Watanabe A
839 - 842	The electrothermal behavior of 4H-SiC Schottky diodes at forward bias considering single pulse and pulsed current operation Felsl HP, Wachutka G, Rupp R
843 - 846	1kV 4H-SiC JBS rectifiers fabricated using an AlN capped anneal Zhu L, Shanbhag M, Chow TP, Jones KA, Ervin MH, Shah PB, Derenge MA, Vispute RD, Venkatesan T, Agarwal A
847 - 850	Simulations of high-voltage 4H-SiC p(+)nn(+) diodes using a transient model for the deep boron level Domeij M, Zimmermann U, Aberg D, Ostermann J, Hallen A, Ostling M
851 - 854	Optical switch-on of silicon carbide thyristor Levinshtein ME, Ivanov PA, Agarwal AK, Palmour JW
855 - 858	Reverse current recovery in 4H-SiC diodes with n- and p-base Ivanov PA, Grekhov IV, Konstantinov AO, Samsonova TP
859 - 862	SiC lateral super-junction diodes fabricated by epitaxial growth Miura M, Nakamura S, Suda J, Kimoto T, Matsunami H
863 - 866	OBIC measurements of 1.3kV 6H-SiC bipolar diodes protected by junction termination extension Wang SR, Raynaud C, Planson D, Lazar M, Chante JP
867 - 870	4H-SiC pn diode grown by LPE method for high power applications Kuznetsov N, Bauman D, Gavrilin A, Kassamakova L, Kakanakov R, Sarov G, Cholakova T, Zekentes K, Dmitriev V
871 - 874	Characterization of a 4H-SiC high power density controlled current limiter Tournier D, Godignon P, Montserrat J, Planson D, Raynaud C, Lazar M, Chante JP, Sarrus F, Bonhomme C, de Palma JF
875 - 878	Forward dynamic IV characteristics in epitaxial and implanted SiC PiN power diodes Hillkirk LM, Bakowski M
879 - 882	Fabrication and simulation of 4H-SiC PiN diodes having mesa guard ring edge termination Sankin I, Dufrene JB, Merrett JN, Casady JB
883 - 886	Fabrication and characterisation of high-voltage SiC-thyristors Zorngiebel V, Scharnholz S, Spahn E, Brosselard P, Arssi N, Chante JP, Planson D, Raynaud C, Spangenberg B, Kurz H
887 - 890	SiC device limitation breakthrough with novel floating junction structure on 4H-SiC Adachi K, Omura I, Ono R, Nishio J, Shinohe T, Ohashi H, Arai K
891 - 894	Novel buried field rings edge termination for 4H-SiC high-voltage devices Mihaila A, Udrea F, Godignon P, Trajkovic T, Brezeanu G, Rebollo J, Millan J
895 - 899	To be "snappy" or not - a comparison of the transient behaviours of bipolar SiC-diodes Bartsch W, Schorner R, Mitlehner H, Dohnke KO, Thomas B, Stephani D
901 - 906	Degradation in SiC bipolar devices: Sources and consequences of electrically active dislocations in SiC Lendenmann H, Bergman JP, Dahlquist F, Hallin C
907 - 912	Insight into the degradation phenomenon in SiC devices from ab initio calculations of the electronic structure of single and multiple stacking faults Lindefelt U, Iwata H, Oberg S, Briddon PR
913 - 916	Properties of different stacking faults that cause degradation in SiC PiN diodes Jacobson H, Bergman JP, Hallin C, Tuomi T, Janzen E
917 - 920	Impact of SiC structural defects on the degradation phenomenon of bipolar SiC devices Malhan RK, Nakamura H, Onda S, Nakamura D, Hara K
921 - 924	Stacking fault - Stacking fault interactions and cubic inclusions in 6H-SiC: an ab initio study Iwata H, Lindefelt U, Oberg S, Briddon PR
925 - 928	Influence of stacking faults on the I-V characteristics of 4H-SiC Schottky barrier diodes fabricated on the (11(2)over-bar0) face Kojima K, Ohno T, Fujimoto T, Katsuno M, Ohtani N, Nishio J, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Arai K
929 - 932	Reliability of 4H-SiC p-n diodes on LPE grown layers Sarov G, Kakanakov R, Cholakova T, Kassamakova L, Hristeva N, Lepoeva G, Philipova P, Kuznetsov N, Zekentes K
933 - 936	In situ studies of structural instability in operating 4H-SiC PiN diodes Galeckas A, Linnros J, Pirouz P
937 - 940	SEM visibility of stacking faults in 4H-silicon carbide epitaxial and implanted layers Zimmermann U, Osterman J, Galeckas A, Hallen A
941 - 944	SiC X-ray detectors for spectroscopy and imaging over a wide temperature range Bertuccio G, Casiraghi R, Gatti E, Maiocchi D, Nava F, Canali C, Cetronio A, Lanzieri C
945 - 948	Effects of nitrogen radical irradiation on performance of SiC MOSFETs Yano H, Maeyama Y, Furumoto Y, Hatayama T, Uraoka Y, Fuyuki T
949 - 952	New tunnel Schottky SiC devices using mixed conduction ceramics Cerda J, Morante JR, Spetz AL
953 - 956	MISiCFET chemical sensors for applications in exhaust gases and flue gases Wingbrant H, Uneus L, Andersson M, Cerda J, Savage S, Svenningstorp H, Salomonsson P, Ljung P, Mattsson M, Visser JH, Kubinski D, Soltis R, Ejakov SG, Moldin D, Lofdahl M, Einehag M, Persson M, Spetz AL
957 - 960	Radiation hardness of silicon carbide Lebedev AA, Kozlovski VV, Strokan NB, Davydov DV, Ivanov AM, Strel'chuk AM, Yakimova R
961 - 964	NO gas detection at high temperature using thin-Pt 4H-SiC and 6H-SiC schottky diodes Khan SA, de Vasconcelos EA, Uchida H, Katsube T
965 - 968	Improved understanding and optimization of SiC nearly solar blind UV photodiodes Brezeanu G, Udrea F, Amaratunga G, Mihaila A, Godignon P, Millan J, Badila M
969 - 972	P-type 6H-SiC films in the creation of triode structures for low ionization radiation Ivanov AM, Strokan NB, Davydov DV, Savkina NS, Strelchuk AM, Lebedev AA, Yakimova R
975 - 978	Effect of tantalum in sublimation growth of aluminum nitride Furusho T, Ohshima S, Nishino S
979 - 982	Growth of AlN bulk crystals by sublimation sandwich method Mokhov EN, Roenkov AD, Vodakov YA, Karpov SY, Ramm MS, Segal AS, Makarov YA, Helava H
983 - 986	Seeded PVT growth of aluminum nitride on silicon carbide Epelbaum BM, Bickermann M, Winnacker A
987 - 990	Growth and characterization of epitaxial wurtzite Al1-xInxN thin films deposited by UHV reactive dual DC magnetron sputtering Seppanen T, Radnoczi GZ, Tungasmita S, Hultman L, Birch J
991 - 994	Implementation of hot-wall MOCVD in the growth of high-quality GaN on SiC Kakanakova-Georgieva A, Forsberg U, Hallin C, Persson POA, Storasta L, Pozina G, Birch J, Hultman L, Janzen E
995 - 998	Properties of AlN layers grown by sublimation epitaxy Beshkova M, Zakhariev Z, Birch J, Kakanakova A, Yakimova R
999 - 1002	Microstructure of GaN layers grown onto (001) and (111)GaAs substrates by molecular beam epitaxy Toth L, Pecz B, Czigany Z, Amimer K, Georgakilas A
1003 - 1006	Structural study of GaN layers grown on carbonized Si(111) substrates Morales FM, Ponce A, Molina SI, Araujo D, Garcia R, Ristic J, Sanchez-Garcia MA, Calleja E, Cimalla V, Pezoldt J