Materials Science Forum

Materials Science Forum, Vol.389-3 Entire volume, number list

ISSN: 0255-5476 (Print)

In this Issue (371 articles)

3 - 8	Silicon carbide technology in new era Matsunami H
9 - 14	Characterisation and defects in silicon carbide Bergman JP, Jakobsson H, Storasta L, Carlsson FHC, Magnusson B, Sridhara S, Pozina G, Lendenmann H, Janzen E
15 - 20	Opportunities and technical strategies for silicon carbide device development Cooper JA
23 - 28	High quality SiC substrates for semiconductor devices: From research to industrial production Muller SG, Brady MF, Brixius WH, Fechko G, Glass RC, Henshall D, Hobgood HM, Jenny JR, Leonard R, Malta D, Powell A, Tsvetkov VF, Allen S, Palmour J, Carter CH
29 - 34	Growth and defect reduction of bulk SiC crystals Ohtani N, Fujimoto T, Katsuno M, Aigo T, Yashiro H
35 - 38	Growth of 3-inch diameter 6H-SiC single crystals by sublimation physical vapor transport Wang S, Sanchez EK, Kopec A, Poplawski S, Ware R, Holmes S, Balkas CM, Timmerman AG
39 - 42	Lateral enlargement of silicon carbide crystals Jacobson H, Yakimova R, Raback P, Syvajarvi M, Birch J, Janzen E
43 - 46	Numerical simulation of heat and mass transfer in SiC sublimation growth Nishizawa S, Kato T, Kitou Y, Oyanagi N, Arai K
47 - 50	4H polytype grain formation in PVT-grown 6H-SiC ingots Fujimoto T, Katsuno M, Ohtani N, Aigo T, Yashiro H
51 - 54	The development of 2in 6H-SiC wafer with high thermal-conductivity Miyanagi Y, Nakayama K, Shiomi H, Nishino S
55 - 58	Evolution of crystal mosaicity during physical vapor transport growth of SiC Katsuno M, Ohtani N, Fujimoto T, Aigo T, Yashiro H
59 - 62	Reduction of macrodefects in bulk SiC single crystals Balkas CM, Maltsev AA, Roth MD, Heydemann VD, Sharma M, Yushin NK
63 - 66	Model for macroscopic slits in 6H-and 4H-SiC single crystals Wollweber J, Rost HJ, Schulz D, Siche D
67 - 70	Macrodefect generation in SiC single crystals caused by polytype changes Rost HJ, Doerschel J, Schulz D, Siche D, Wollweber J
71 - 74	The nucleation of polytype inclusions during the sublimation growth of 6H and 4H silicon carbide Sanchez EK, Kopec A, Poplawski S, Ware R, Holmes S, Wang S, Timmerman A
75 - 78	Characterization of inclusions in SiC bulk crystals grown by modified Lely method Hirose F, Kitou Y, Oyanagi N, Kato T, Nishizawa S, Arai K
79 - 82	Observation of planar defects in 2-inch SiC wafer Tanaka H, Nishiguchi T, Sasaki M, Nishino S
83 - 86	Flux-controlled sublimation growth by an inner guide-tube Kitou Y, Bahng W, Kato T, Nishizawa S, Arai K
87 - 90	Growth 3nd evaluation of high quality SiC crystal by sublimation method Oyanagi N, Yamaguchi H, Kato T, Nishizawa S, Arai K
91 - 94	'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging Wellmann PJ, Herro Z, Straubinger TL, Winnacker A
95 - 98	Influence of the crystal thickness on the SiCPVT growth rate Cherednichenko D, Khlebnikov Y, Drachev RV, Khlebnikov II, Sudarshan TS
99 - 102	Micropipe formation model via surface step interaction Ohtani N, Katsuno M, Fujimoto T, Aigo T, Yashiro H
103 - 106	Self-healing phenomenon of micropipes in silicon carbide Okamoto A, Seno Y, Sugiyama N, Hirose F, Hara K, Tani T, Nakamura D, Kamiya N, Onda S
107 - 110	A method of reducing micropipes in thin films by using sublimation growth Oyanagi N, Nishizawa S, Arai K
111 - 114	Dislocation constraint by etch-back process of seed crystal in SiC bulk crystal growth Kato T, Oyanagi N, Kitou Y, Nishizawa S, Arai K
115 - 118	The effect of nitrogen on crystal growth of SiC on (11(2)over-bar0) substrates Nishiguchi T, Masuda Y, Ohshima S, Nishino S
119 - 122	Temperature dependence of sublimation growth of 6H-SiC on (11(2)over-bar0) substrates Nishiguchi T, Masuda Y, Ohshima S, Nishino S
123 - 126	The development of 4H-SiC {03(3)over-bar8) wafers Nakayama K, Miyanagi Y, Shiomi H, Nishino S, Kimoto T, Matsunami H
127 - 130	Incorporation of boron and the role of nitrogen as a compensation source in SiC bulk crystal growth Bickermann M, Weingartner R, Hofmann D, Straubinger TL, Winnacker A
131 - 134	Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method Straubinger TL, Bickermann M, Rasp M, Weingartner R, Wellmann PJ, Winnacker A
135 - 138	Resistivity mapping of semi-insulating 6H-SiC wafers Roth MD, Heydemann VD, Mitchel WC, Yushin NK, Sharma M, Wang S, Balkas CM
139 - 142	On the preparation of vanadium-doped semi-insulating SiC bulk crystals Bickermann M, Hofmann D, Straubinger TL, Weingartner R, Winnacker A
143 - 146	Solid-phase epitaxial growth of bulk SiC single crystals Pernot E, Anikin M, Pons M, Chaix-Pluchery O, Baillet F, Matko I, Madar R
147 - 150	Full Si wafer conversion into bulk 3C-SiC Leycuras A, Tottereau O, Vicente P, Falkovsky L, Girard P, Camassel J
151 - 154	QuaSiC Smart-Cut (R) substrates for SiC high power devices Letertre F, Jalaguier E, Di Cioccio L, Templier F, Bluet JM, Banc C, Matko I, Chenevier B, Bano E, Guillot G, Billon T, Aspar B, Madar R, Ghyselen B
155 - 158	CVD SiC powder for high-purity SiC source material Ezaki S, Saito M, Ishino K
159 - 162	Direct synthesis and growth of SiC single crystal from ultrafine particle precursor Yamada Y, Sagawa K
165 - 170	Recent achievements and future challenges in SiC homoepitaxial growth Kimoto T, Nakazawa S, Fujihira K, Hirao T, Nakamura S, Chen Y, Hashimoto K, Matsunami H
171 - 174	Growth and electrical characterization of lightly-doped thick 4H-SiC epilayers Tsuchida H, Kamata I, Jikimoto T, Izumi K
175 - 178	Fast epitaxial growth of 4H-SiC by chimney-type hot-wall CVD Fujihira K, Kimoto T, Matsunami H
179 - 182	High-rate epitaxial growth of 4H-SiC using a vertical-type, quasi-hot-wall CVD reactor Masahara K, Takahashi T, Kushibe M, Ohno T, Nishio J, Kojima K, Ishida Y, Suzuki T, Tanaka T, Yoshida S, Arai K
183 - 186	Fast growth and doping characteristics of alpha-SiC in horizontal cold-wall chemical vapor deposition Nakamura S, Kimoto T, Matsunami H
187 - 190	Highly uniform epitaxial SiC-layers grown in a hot-wall CVD reactor with mechanical rotation Schoner A, Konstantinov A, Karlsson S, Berge R
191 - 194	Growth characteristics of SiC in a hot-wall CVD reactor with rotation Zhang J, Forsberg U, Isacson M, Ellison A, Henry A, Kordina O, Janzen E
195 - 198	Epitaxial growth of (1120) 4H-SiC using substrate grown in the [1120] direction Kojima K, Ohno T, Senzaki J, Fukuda K, Fujimoto T, Katsuno M, Ohtani N, Nishino J, Masahara K, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Yoshida S, Arai K
199 - 202	Hot-wall CVD growth of 4H-SiC using Si2Cl6+C3H8+H-2 system Miyanagi T, Nishino S
203 - 206	Aluminum doping of epitaxial silicon carbide grown by hot-wall CVD; Effect of process parameters Forsberg U, Danielsson O, Henry A, Linnarsson MK, Janzen E
207 - 210	Aluminum incorporation into 4H-SiC layers during epitaxial growth in a hot-wall CVD system Wagner G, Leitenberger W, Irmscher K, Schmid F, Laube M, Pensl G
211 - 214	Vapor-phase epitaxial growth of n-type SiC using phosphine as the precursor Wang RJ, Bhat I, Chow TP
215 - 218	Investigation of residual impurities in 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition Nishio J, Kushibe M, Masahara K, Kojima K, Ohno T, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Yoshida S, Arai K
219 - 222	Predicting growth rates of SiC epitaxial layers grown by hot-wall chemical vapor deposition Danielsson O, Jonsson S, Henry A, Janzen E
223 - 226	Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition Pons M, Meziere J, Kuan SWT, Blanquet E, Ferret P, Di Cioccio L, Billon T, Madar R
227 - 230	Simulation of high-temperature SiC epitaxial growth using vertical, quasi-hot-wall CVD reactor Hasegawa M, Miyauchi A, Masahara K, Ishida Y, Takahashi T, Ohno T, Nishio J, Suzuki T, Tanaka T, Yoshida S, Arai K
231 - 234	Bending of basal-plane dislocations in VPE grown 4H-SiC epitaxial layers Ha S, Mieszkowski P, Rowland LB, Skowronski M
235 - 238	The effect of epitaxial growth on warp of SiC wafers Nakayama K, Miyanagi Y, Maruyama K, Okamoto Y, Shiomi H, Nishino S
239 - 242	In situ etching of 4H-SiC in H-2 with addition of HCl for epitaxial CVD growth Zhang J, Kordina O, Ellison A, Janzen E
243 - 246	Surface morphology of SiC epitaxial layers grown by vertical hot-wall type CVD Takahashi K, Uchida M, Yokogawa T, Kusumoto O, Yamashita K, Miyanaga R, Kitabatake M
247 - 250	Delta-doped layers of SiC grown by'pulse doping' technique Takahashi K, Yokogawa T, Uchida M, Kusumoto O, Yamashita K, Miyanaga R, Kitabatake M
251 - 254	Homoepitaxial'web growth' of SiC to terminate C-axis screw dislocations and-enlarge step-free surfaces Neudeck PG, Powell JA, Trunek A, Spry D, Beheim GM, Benavage E, Abel P, Vetter WM, Dudley M
255 - 258	Formation of epitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates Chen Y, Kimoto T, Takeuchi Y, Matsunami H
259 - 262	Characteristics of boron in 4H-SiC layers produced by high-temperature techniques Kakanakova-Georgieva A, Yakimova R, Zhang J, Storasta L, Syvajarvi M, Janzen E
263 - 266	Epitaxial growth of 4H-SiC with hexamethyldisilane HMDS Sartel C, Souliere V, Dazord J, Monteil Y, El-Harrouni I, Bluet JM, Guillot G
267 - 270	Homoepitaxial growth of 4H-SiC on porous substrate using bis-trimethylsilmethane precursor Jeong JK, Um MY, Na HJ, Kim BS, Song IB, Kim HJ
271 - 274	TEM (XHREM) and EDX studies of 6H-SiC porous layer as a substrate for subsequent homoepitaxial growth Sorokin LM, Hutchison JL, Sloan J, Mosina GN, Savkina NS, Shuman VB, Lebedev AA
275 - 278	3C-SiC(100) homoepitaxial growth by chemical vapor deposition and Schottky barrier junction characteristics Ishida Y, Kushibe M, Takahashi T, Okumura H, Yoshida S
279 - 282	Homoepitaxial growth of cubic silicon carbide by sublimation epitaxy Furusho T, Miyanagi T, Okui Y, Ohshima S, Nishino S
283 - 286	Impact of the initial surface conditions on defect appearance in 4H-SiC epilayers Yakimova R, Jacobson H, Syajarvi M, Kakanakova-Georgieva A, Iakimov T, Virojanadara C, Johansson LI, Janzen E
287 - 290	Effect of the Si droplet size on the VLS growth mechanism of SiC homoepitaxial layers Ferro G, Chaussende D, Cauwet F, Monteil Y
291 - 294	Liquid-phase epitaxial growth of heavily doped Al p-type contact layers for SiC devices and resulting ohmic contacts Syrkin A, Dmitriev V, Kovalenkov O, Bauman D, Crofton J
295 - 298	Traveling self-confined-solvent method: Novel LPE growth of 6H-SiC Asaoka Y, Hiramoto M, Sano N, Kaneko T
299 - 302	Homoepitaxial growth of 4H-SiC thin film below 1000 degrees C microwave plasma chemical vapor deposition Okamoto M, Kosugi R, Tanaka Y, Takeuchi D, Nakashima S, Nishizawa S, Fukuda K, Okushi H, Arai K
303 - 306	In situ etching of SiC wafers in a CVD system using oxygen as the source Wang RJ, Bhat I, Chow TP
307 - 310	SiO2 as oxygen source for the chemical vapor transport of SiC Jacquier C, Ferro G, Cauwet F, Monteil Y
311 - 314	Growth of defect-free 3C-SiC on 4H-and 6H-SiC mesas using step-free surface heteroepitaxy Neudeck PG, Powell JA, Trunek AJ, Huang XRR, Dudley M
315 - 318	3C-SiC Growth on 6H-SiC (0001) substrates Matko I, Chenevier B, Audier M, Madar R, Diani M, Simon L, Kubler L, Aubel D
319 - 322	Heteroepitaxial growth and characteristics of 3C-SiC on large-diameter Si(001) substrates Nagasawa H, Kawahara T, Yagi K
323 - 326	Comparative study of heteroepitaxially and homoepitaxially grown 3C-SiC films Takahashi T, Ishida Y, Tsuchida H, Kamata I, Okumura H, Yoshida S, Arai K
327 - 330	Growth of 3C-SiC on Si(100) by LPCVD and patterning of the grown layers Bakin A, Behrens I, Ivanov A, Peiner E, Piester D, Wehmann HH, Schlachetzki A
331 - 334	Selective epitaxial growth of pyramidal 3C-SiC on patterned Si substrate Okui Y, Jacob C, Ohshima S, Nishino S
335 - 338	Evaluation of carbonized layers for 3C-SiC/Si epitaxial growth by ellipsometry Shimizu H, Ohba T, Hisada K
339 - 342	In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD Sun GS, Luo MC, Wang L, Zhu SR, Li JM, Zeng YP, Lin LY
343 - 346	Improved SiCOI structures elaborated by heteroepitaxy of 3C-SiC on SOI Chassagne T, Ferro G, Wang H, Stoemenos Y, Peyre H, Contreras S, Camassel J, Monteil Y, Ghyselen B
347 - 350	Study of metamorphosing top Si layer of SOI wafer into 3C-SiC using conventional electric furnace Hirai S, Jobe F, Nakao M, Izumi K
351 - 354	Formation of extremely thin, quasi-single-domain 3C-SiC film on resistively heated on-axis Si(001) substrate using organo-silane buffer layer Nakazawa H, Suemitsu M
355 - 358	Electrical characterization of SiC/Si heterostructures with modified interfaces Forster C, Masri P, Pezoldt J
359 - 362	Void-free epitaxial growth of cubic SiC crystallites during CO heat treatment of oxidized silicon Krafcsik OH, Vida G, Josepovits KV, Deak P, Radnoczi GZ, Pecz B, Barsony I
363 - 366	Reaction mechanism of the carbonization process by low-energy ion subplantation Tsubouchi N, Chayahara A, Mokuno Y, Kinomura A, Horino Y
367 - 370	Comparison of the growth characteristics of SiC on Si between low-pressure CVD and triode plasma CVD Yasui K, Hashiba M, Narita Y, Akahane T
371 - 374	Fabrication of alpha-SiC heteroepitaxial films by YAG-PLAD method Muto H, Kusumori T
375 - 378	Low-temperature preparation of alpha-SiC epitaxial films by Nd : YAG pulsed-laser deposition Kusumori T, Muto H
379 - 382	Physics of heteroepitaxy and heterophases Masri P, Pezoldt J, Sumiya M, Averous M
385 - 390	Growth-induced structural defects in SiCPVT boules Skowronski M
391 - 394	Polytype identification and mapping in heteroepitaxial growth of 3C on atomically flat 4H-SiC mesas using synchrotron white-beam X-ray topography Dudley M, Vetter WM, Huang XR, Neudeck PG, Powell JA
395 - 398	Behavior of micropipes during growth in 4H-SiC Vouroutzis N, Yakimova R, Syvajarvi M, Jacobson H, Stoemenos J, Janzen E
399 - 402	Reduced micropipe density in boule-derived 6H-SiC substrates via H etching of seed crystals Saddow SE, Elkington T, Smith MCD
403 - 406	Stress distribution in 2in SiC wafer measured by photoelastic method Sasaki M, Miyanagi Y, Nakayama K, Shiomi H, Nishino S
407 - 410	Characterization of 2in SiC as-grown bulk by SWBXT at SPring-8 Sasaki M, Hirai A, Miyanagi T, Furusho T, Nishiguchi T, Shiomi H, Nishino S
411 - 414	Observation of 2in SiC wafer by SWBXT at SPring-8 Sasaki M, Hirai A, Miyanagi T, Furusho T, Nishiguchi T, Shiomi H, Nishino S
415 - 418	Analysis of sub-surface damage-induced threading dislocations in physical vapor transport growth of 6H-SiC Liu JQ, Sanchez EK, Skowronski M
419 - 422	Investigation of structural defects during 4H-SiC Schottky diode processing by synchrotron topography Pernot E, Neyret E, Moulin C, Pernot-Rejmankova P, Templier F, Di Cioccio L, Billon T, Madar R
423 - 426	Structural defects in electrically degraded 4H-SiC PiN diodes Persson POA, Jacobson H, Molina-Aldareguia JM, Bergman JP, Tuomi T, Clegg WJ, Janzen E, Hultman L
427 - 430	Propagation of current-induced stacking faults and forward voltage degradation in 4H-SiC PiN diodes Stahlbush RE, Fedison JB, Arthur SD, Rowland LB, Kretchmer JW, Wang S
431 - 434	Optical emission microscopy of structural defects in 4H-SiC PiN diodes Galeckas A, Linnros L, Breitholtz B
435 - 438	Structure of 2D-nucleation-induced stacking faults in 6H-SiC Liu JQ, Sanchez EK, Skowronski M
439 - 442	Theoretical calculation of stacking fault energies in silicon carbide Iwata H, Lindefelt U, Oberg S, Briddon PR
443 - 446	A simple mapping method for elementary screw dislocations in homoepitaxial SiC layers Ha S, Vetter WM, Dudley M, Skowronski M
447 - 450	Replication of defects from 4H-SiC wafer to epitaxial layer Ohno T, Yamaguchi H, Kojima K, Nishio J, Masahara K, Ishida Y, Takahashi T, Suzuki T, Yoshida S
451 - 454	4H-to 3C-SiC polytypic transformation during oxidation Okojie RS, Xhang M, Pirouz P, Tumakha S, Jessen G, Brillson LJ
455 - 458	Oxidation-induced crystallographic transformation in heavily N-doped 4H-SiC wafers Skromme BJ, Palle K, Poweleit CD, Bryant LR, Vetter WM, Dudley M, Moore K, Gehoski T
459 - 462	Investigation of the relationship between defects and electrical properties of 3C-SiC epilayers Ishida Y, Kushibe M, Takahashi T, Okumura H, Yoshida S
463 - 466	RHEED: A tool for structural investigations of thin polytypic SiC layers Scharmann F, Pezoldt J
467 - 470	Electron-irradiation-induced amorphization of 6H-SiC by 300 keV transmission electron microscope equipped with a field-emission gun Bae IT, Ishimaru M, Hirotsu Y
471 - 476	The nature and diffusion of intrinsic point defects in SiC Bockstedte M, Heid M, Mattausch A, Pankratov O
477 - 480	Theoretical investigation of an intrinsic defect in SiC Gali A, Deak P, Son NT, Janzen E
481 - 484	Carbon interstitials in SiC: A model for the D-II center Mattausch A, Bockstedte M, Pankratov O
485 - 488	Chemical environment of atomic vacancies in electron irradiated silicon carbide measured by a 2D-Doppler broadening technique Rempel AA, Blaurock K, Reichle KJ, Sprengel W, Schaefer HE
489 - 492	Radiation-induced defects in 4H-and 6H-SiC epilayers studied by positron annihilation and deep-level transient spectroscopy Kawasuso A, Weidner M, Redmann F, Frank T, Krause-Rehberg R, Pensl G, Sperr P, Triftshauser W, Itoh H
493 - 496	Vacancy defects in as-polished and in high-fluence H(+)-implanted 6H-SiC detected by slow positron annihilation spectroscopy Barthe MF, Desgardin P, Henry L, Corbel C, Britton DT, Kogel G, Sperr P, Triftshauser W, Vicente P, diCioccio L
497 - 500	EPR study of single silicon vacancy-related defects in 4H-and 6H-SiC Mizuochi N, Isoya J, Yamasaki S, Takizawa H, Morishita N, Ohshima T, Itoh H
501 - 504	The neutral silicon vacancy in SiC: Ligand hyperfine interaction Wagner M, Thinh NQ, Son NT, Baranov PG, Mokhov EN, Hallin C, Chen WM, Janzen E
505 - 508	Properties of the UD-1 deep-level center in 4H-SiC Magnusson B, Ellison A, Janzen E
509 - 512	Electronic structure of the UD3 defect in 4H-and 6H-SiC Wagner M, Magnusson B, Chen WM, Janzen E
513 - 516	Depth distribution of lattice damage-related D-I and D-II defects after ion implantation and annealing of 6H-SiC Koshka Y, Melnychuck G
517 - 520	Electrical properties of neutron-irradiated silicon carbide Kanazawa S, Okada M, Ishii J, Nozaki T, Shin K, Ishihara S, Kimura I
521 - 524	Radiation-induced defects in p-type silicon carbide Kanazawa S, Okada M, Nozaki T, Shin K, Ishihara S, Kimura I
525 - 528	Hole and electron effective masses in 6H-SiC studied by optically detected cyclotron resonance Son NT, Hallin C, Janzen E
529 - 532	Electronic localization around stacking faults in silicon carbide Iwata H, Lindefelt U, Oberg S, Briddon PR
533 - 536	Theoretical study of cubic polytype inclusions in 4H-SiC Iwata H, Lindefelt U, Oberg S, Briddon PR
537 - 540	Full-band Monte Carlo simulation of electron transport in 3C-SiC Nilsson HE, Englund U, Hjelm M
541 - 544	Physical mechanism for the anomalous behavior of n-type dopants in SiC Malhan RK, Kozima J, Yamamoto T, Fukumoto A
545 - 548	Influence of junction potential distribution on effective impurity ionization time constants in SiC for admittance spectroscopy data analysis Los AV, Mazzola MS
549 - 552	Electrical activity of residual boron in silicon carbide Storasta L, Bergman JP, Hallin C, Janzen E
553 - 556	Ab initio calculations of B diffusion in SiC Rurali R, Hernandez E, Godignon P, Rebollo J, Ordejon P
557 - 560	Aluminum and boron diffusion into (1100) face SiC substrates Soloviev SI, Gao Y, Khlebnikov Y, Khlebnikov II, Sudarshan TS
561 - 564	Impurity-controlled dopant activation - The role of hydrogen in p-type doping of SiC Aradi B, Gali A, Deak P, Son NT, Janzen E
565 - 568	Incorporation of hydrogen (H-1 and H-2) into 4H-SiC during epitaxial growth Linnarsson MK, Forsberg U, Janson MS, Janzen E, Svensson BG
569 - 572	Hydrogen incorporation into SiC using plasma-hydrogenation Koshka Y, Draper WA, Lakshman RY, Scofield J, Saddow SE
573 - 576	Polytype dependence of transition metal-related deep levels in 4H-, 6H-and 15R-SiC Grillenberger J, Achtziger N, Pasold G, Witthuhn W
577 - 580	Theoretical studies of vanadium impurity in beta-SiC Tairov YM, Reshanov SA, Parfenova II, Yuryeva EI, Ivanovskii AL
581 - 584	New and improved quantitative characterization of SiC using SIMS Wang L, Sams DB, Wang A, Park BS
585 - 588	Experiment and theory of the anharmonic effect in C-H and C-D vibrations of SiC Choyke WJ, Devaty RP, Bai S, Gali A, Deak P, Pensl G
589 - 592	Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor Bai S, Wagner G, Shishkin E, Choyke WJ, Devaty RP, Zhang M, Pirouz P, Kimoto T
593 - 596	Characterization of bulk and epitaxial SiC material using photoluminescence spectroscopy Henry A, Ellison A, Forsberg U, Magnusson B, Pozina G, Janzen E
597 - 600	Characterization of SiC epitaxial wafers by photoluminescence under deep UV excitation Tajima M, Tanaka M, Hoshino N
601 - 604	UV scanning photoluminescence spectroscopy investigation of 6H-and 4H-SiC Masarotto L, Bluet JM, Guillot G
605 - 608	Mapping of the luminescence decay of lightly-doped n-4H-SiC at room-temperature Schneider K, Helbig R
609 - 612	Photoluminescence investigation of hydrogen interaction with defects in SiC Koshka Y, Mazzola MS
613 - 616	Photoconductivity of lightly-doped and semi-insulating 4H-SiC and the free exciton binding energy Ivanov IG, Zhang J, Storasta L, Janzen E
617 - 620	Characterization of 4H-SiC band-edge absorption properties by free-carrier absorption technique with a variable excitation spectrum Grivickas P, Grivickas V, Galeckas A, Linnros J
621 - 624	Spatial mapping of the carrier concentration and mobility in SiC wafers by micro Fourier-transform infrared spectroscopy Yaguchi H, Narita K, Hijikata Y, Yoshida S, Nakashima S, Oyanagi N
625 - 628	Experimental determination of the phonon-eigenvectors of silicon carbide by Raman spectroscopy Herzog B, Rohmfeld S, Pusche R, Hundhausen M, Ley L, Semmelroth K, Pensl G
629 - 632	Sensitive detection of defects in alpha and beta SiC by Raman scattering Nakashima S, Nakatake Y, Ishida Y, Takahashi T, Okumura H
633 - 636	Raman microprobe study of carrier density profiles in modulation-doped 6H SiC Nakashima S, Nakatake Y, Yano Y, Harima H, Ohtani N, Katsuno M
637 - 640	A Raman study of metal-SiC interface reactions Kurimoto E, Harima H, Toda T, Sawada M, Nakashima S, Iwami M
641 - 644	Ultrafast electron relaxation processes in SiC Tomita T, Saito S, Suemoto T, Harima H, Nakashima S
647 - 650	Optical characterization of ion-implanted 4H-SiC Feng ZC, Yan F, Chang WY, Zhao JH, Lin J
651 - 654	Breakdown fields along various crystal orientations in 4H-, 6H- and 3C-SiC Nakamura SI, Kumagai H, Kimoto T, Matsunami H
655 - 658	Quantitative high-resolution two-dimensional profiling of SiC by scanning capacitance microscopy Raineri V, Giannazzo F, Calcagno L, Musumeci P, Roccaforte F, La Via F
659 - 662	Scanning capacitance microscopy of SiC multiple PN junction structure grown by cold-wall chemical vapor deposition Suda J, Nakamura S, Miura M, Kimoto T, Matsunami H
663 - 666	Carrier concentrations in implanted and epitaxial 4H-SiC by scanning spreading resistance microscopy Osterman J, Anand S, Linnarsson M, Hallen A
667 - 670	Nanoscale electrical characterization of 3C-SiC layers by conductive atomic force microscopy Yahata A, Zhang L, Shinohe T
671 - 674	Point-contact current voltage technique for depth profiling of dopants in silicon carbide Fukuda Y, Nishikawa K, Shimizu M, Iwakuro H
675 - 678	Optical and electrical characterization of free-standing 3C-SiC films grown on undulant 6in Si substrates Yamada T, Itoh KM
679 - 682	Influence of excited states of deep acceptors on hole concentrations in SiC Matsuura H
683 - 686	p-3C-SiC/n-6H-SiC heterojunctions: Structural and electrical Lebedev AA, Strel'chuk AM, Davydov DV, Savkina NS, Tregubova AS, Kuznetsov AN, Soloviev VA, Poletaev NK
687 - 690	Scanning acoustic microscopy in porous SiC Ostapenko S, Smith MCD, Tarasov I, Wolan JT, Mynbaeva M, Goings J, McKeon JCP, Saddow SE
691 - 696	Atomic-scale passivation of silicon carbide surfaces Soukiassian P
697 - 700	Adsorption of metastable molecular oxygen on SiC(0001)-root 3 x root 3 Virojanadara C, Johansson LI
701 - 704	Oxidation states present on SiC (0001) after oxygen exposure Virojanadara C, Johansson LI
705 - 708	Adsorbate effects of the surface structure of 6H-SiC(0001) root 3 x root 3-R30 degrees Aoyama T, Hisada Y, Mukainakano S, Ichimiya A
709 - 712	In situ analysis of thermal oxidation on H-terminated 4H-SiC surfaces Jikimoto T, Tsuchida H, Kamata I, Izumi K
713 - 716	A high-resolution photoemission study hydrogen-terminated 6H-SiC surfaces Sieber N, Seyller T, Ley L, Polcik M, James D, Riley JD, Leckey RCG
717 - 720	Wet-chemical preparation of silicate adlayer reconstructed SiC(0001) surfaces as studied by PIES and LEED Sieber N, Seyller T, Graupner R, Ley L, Mikalo RP, Hoffmann P, Batchelor D, Schmeisser D
721 - 724	Photoemission electron imaging of transition metal (Ti, Ni) surfaces on Si and SiC Labis J, Kamezawa C, Hirai M, Kusaka M, Iwami M
725 - 728	In situ RHEED analysis of the Ge-induced surface reconstructions on 6H-SiC(0001) Weih P, Stauden T, Pezoldt J
729 - 732	Atomic-step observations on 6H-and 15R-SiC polished surfaces Vicente P, Pernot E, Chaussende D, Camassel J
733 - 736	Optimization of interface and interphase systems: The case of SiC and III-V nitrides Masri P, Pezoldt J, Sumiya M, Averous M
737 - 742	Towards quantum structures in SiC Bechstedt F, Fissel A, Grossner U, Kaiser U, Weissker HC, Wesch W
743 - 746	Modification of SiC properties by insertion of Ge and Si nanocrystals -Description by ab initio supercell calculations Weissker HC, Furthmuller J, Bechstedt F
747 - 750	Growth and characterization of three-dimensional SiC nanostructures on Si Cimalla V, Zekentes K
751 - 754	Hole resonant tunneling through SiC/Si-dot/SiC heterostructures Ikoma Y, Uchiyama K, Watanabe F, Motooka T
755 - 758	Development of a multilayer SiC surface micromachining process with capabilities and design rules comparable to conventional polysilicon surface micromachining Song X, Rajgopal S, Melzak JM, Zorman CA, Mehregany M
759 - 762	Influence of deposition parameters and temperature on stress and strain of in situ doped PECVD silicon carbide Pham HTM, de Boer CR, Pakula L, Sarro PM
763 - 766	Thermoelectric properties of 3C-SiC produced by silicon carbonization Masuda M, Mabuchi H, Tsuda H, Matsui T, Morii K
767 - 770	The brittle-to-ductile transition in 4H-SiC Zhang M, Hobgood HM, Demenet JL, Pirouz P
773 - 778	Annealing of implanted layers in (1(1)over-bar00) and (11(2)over-bar0) oriented SiC Satoh M
779 - 782	Range distributions of implanted ions in silicon carbide Janson MS, Linnarsson MK, Hallen A, Svensson BG
783 - 786	Phosphorus ion implantation into 4H-SiC (0001) and (11(2)over-bar0) Negoro Y, Miyamoto N, Kimoto T, Matsunami H
787 - 790	Electrical activation of implanted phosphorus ions in (0001)/(11(2)over-bar0)-oriented 4H-SiC Schmid F, Laube M, Pensl G, Wagner G, Maier M
791 - 794	Codoping of 4H-SiC with N- and P-donors by ion implantation Laube M, Schmid F, Pensl G, Wagner G
795 - 798	Improvements in electrical properties of n-type-implanted 4H-SiC substrates using high-temperature rapid thermal annealing Senzaki J, Harada S, Kosugi R, Suzuki S, Fukuda K, Arai K
799 - 802	Low-temperature activation of ion-implanted dopants in 4H-SiC by excimer laser annealing Tanaka Y, Tanoue H, Arai K
803 - 806	Electrical characteristics of Al+ ion-implanted 4H-SiC Tanaka H, Tanimoto S, Yamanaka M, Hoshi M
807 - 810	Micro-structural and electrical properties of Al-implanted & lamp-annealed 4H-SiC Nakamura H, Watanabe H, Yamazaki J, Tanaka N, Malhan RK
811 - 814	Comparison between chemical and electrical profiles in Al+ or N+ implanted and annealed 6H-SiC Nipoti R, Carnera A, Raineri V
815 - 818	Damage evolution and recovery in Al-implanted 4H-SiC Zhang Y, Weber WJ, Jiang W, Hallen A, Possnert G
819 - 822	Comparison of Al and Al/C Co-implants in 4H-SiC annealed with an AlN cap Jones KA, Shah PB, Derenge MA, Ervin MH, Gerardi GJ, Freitas JA, Braga GCB, Vispute RD, Sharma RP, Holland OW
823 - 826	Influence of implantation temperature and dose rate on secondary defect formation in 4H-SiC Ohno T, Amemiya K
827 - 830	A comparative study of high-temperature aluminum post-implantation annealing in 6H-and 4H-SiC, non-uniform temperature effects Lazar M, Raynaud C, Planson D, Locatelli ML, Isoird K, Ottaviani L, Chante JP, Nipoti R, Poggi A, Cardinali G
831 - 834	Post-implantation annealing effects on the surface morphology and electrical characteristics of 6H-SiC implanted with aluminum Ohi A, Ohshima T, Yoshikawa M, Lee KK, Iwami M, Itoh H
835 - 838	Ion implantation - Tool for fabrication of advanced 4H-SiC devices Kalinina EV, Kholujanov G, Gol'dberg Y, Blank T, Onushkin G, Strel'chuk A, Violina G, Kossov V, Yafaev R, Hallen A, Konstantinov A
839 - 842	Annealing kinetics of implantation-induced amorphous layer in 6H-SiC (0001) Nakamura T, Matsumoto S, Horibe T, Satoh M
843 - 846	Direct observation of the solid-phase recrystallization of self-implanted amorphous SiC layer on (11(2)over-bar0), (1(1)over-bar00), and (0001) oriented 6H-SiC Eryu O, Matsuo D, Abe K, Nakashima K
847 - 850	Ion-implantation induced deep levels in SiC studied by isothermal capacitance transient spectroscopy (ICTS) Ono R, Fujimaki M, Senzaki J, Tanimoto S, Shinohe T, Okushi H, Arai K
851 - 854	Distribution profile of deep levels in SiC observed by isothermal capacitance transient spectroscopy Fujimaki M, Ono R, Kushibe M, Masahara K, Kojima K, Shinohe T, Okushi H, Arai K
855 - 858	Enhanced dopant diffusion effects in 4H silicon carbide Phelps GJ, Wright NG, Chester EG, Johnson CM, O'Neill AG, Ortolland S, Horsfall AB, Vassilevski K, Gwilliam RM
859 - 862	Infrared investigation of implantation damage in 6H-SiC Camassel J, Wang HY, Pernot J, Godignon P, Mestres N, Pascual J
863 - 866	Suppression of macrostep formation in 4H-SiC using a cap oxide layer Bahng W, Kim NK, Kim SC, Song GH, Kim ED
867 - 869	Masking process for high-energy and high-temperature ion implantation Ohyanagi T, Onose H, Watanabe A, Someya T, Ohno T, Amemiya K, Kobayashi Y
871 - 874	Laser crystallization mechanism of amorphous SiC thin films Urban S, Falk F, Gorelik T, Kaiser U
875 - 878	Experimental and computer simulation studies of defects and ion-solid interactions in silicon carbide Weber WJ, Gao F, Jiang WL, Devanathan R
879 - 884	Ohmic contact structure and fabrication process applicable to practical SiC devices Tanimoto S, Kiritani N, Hoshi M, Okushi H
885 - 888	CoAl ohmic contact materials with improved surface morphology for p-type 4H-SiC Nakatsuka O, Koide Y, Murakami M
889 - 892	NiSi2 ohmic contact to n-type 4H-SiC Nakamura T, Satoh M
893 - 896	Electrical characterization of nickel silicide contacts on silicon carbide Roccaforte F, La Via F, Raineri V, Musumeci P, Calcagno L
897 - 900	Effects of interfacial reactions on electrical properties of Ni ohmic contacts on n-type 4H-SiC Han SY, Kim NK, Kim ED, Lee JL
901 - 904	Influence of rapid thermal annealing on Ni/6H-SiC contact formation Agueev OA, Svetlichnyi AM, Razgonov RN
905 - 908	Effect of rapid thermal annealing conditions on parameters of Ni/21R-SiC contacts Litvinov VL, Demakov KD, Agueev OA, Svetlichnyi AM, Konakova RV, Lytvyn PM, Milenin VV
909 - 912	Effects of surface treatments of 6H-SiC upon metal-SiC interfaces Abe K, Sumitomo M, Sumi T, Eryu O, Nakashima K
913 - 916	Titanium-based ohmic contact on p-type 4H-SiC Jung KH, Cho NI, Lee JH, Yang SJ, Kim CK, Lee BT, Rim KH, Kim NK, Kim ED
917 - 920	Reliable ohmic contacts to LPE p-type 4H-SiC for high-power p-n diode Kakanakov R, Kassamakova L, Hristeva N, Lepoeva G, Kuznetsov N, Zekentes K
921 - 924	Schottky barriers for Pt on 6H-and 4H-SiC (0001), (000(1)over-bar), (1(1)over-bar00) and (1(2)over-bar10) faces measured by I-V, C-V and internal photoemission Shigiltchoff O, Kimoto T, Hobgood D, Neudeck PG, Porter LM, Devaty RP, Choyke WJ
925 - 928	Electrical properties and interface reaction of annealed Cu/4H-SiC Schottky rectifiers Hatayama T, Kawahito K, Kijima H, Uraoka Y, Fuyuki T
929 - 932	Effect of temperature treatment on Au/Pd Schottky contacts to 4H-SiC Kassamakova L, Kakanakov R, Yakimova R, Kakanakova-Georgieva A, Syvajarvi M, Wilzen L, Janzen E
933 - 936	Characteristics of Schottky diodes on 6H-SiC surfaces after sacrificial anodic oxidation Kato M, Ichimura M, Arai E
937 - 940	Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide Lee SK, Zetterling CM, Ostling M, Aberg I, Magnusson MH, Deppert K, Wernersson LE, Samuelson L, Litwin A
941 - 944	Some comparative properties of diffusion-welded contacts to 6H and 4H silicon carbide Korolkov O, Rang T
945 - 948	Electrical properties of graphite/p-type homoepitaxial diamond contact Chen YG, Hasegawa M, Yamanaka S, Okushi H, Kobayashi N
949 - 952	Reactive ion etching process of 4H-SiC using the CHF3/O-2 mixtures and a post-O-2 plasma-etching process Kang SC, Shin MW
953 - 956	Electrical properties of 4H-SiC thin films reactively ion-etched in SF6/O-2 plasma Kim BS, Jeong JK, Um MY, Na HJ, Song IB, Kim HJ
957 - 960	Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H2O2 solution as electrolytes Song JG, Shin MW
961 - 966	Oxidation of silicon carbide: Problems and solutions Afanas'ev VV, Bassler M, Pensl G, Stesmans A
967 - 972	Passivation of the 4H-SiC/SiO2 interface with nitric oxide Williams JR, Chung GY, Tin CC, McDonald K, Farmer D, Chanana RK, Weller RA, Pantelides ST, Holland OW, Das MK, Feldman LC
973 - 976	Passivation of the oxide/4H-SiC interface Jamet P, Dimitrijev S, Tanner P
977 - 980	Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities Lu CY, Cooper JA, Chung GY, Williams JR, McDonald K, Feldman LC
981 - 984	High-current, NO-annealed lateral 4H-SiC MOSFETs Das MK, Chung GY, Williams JR, Saks NS, Lipkin LA, Palmour JW
985 - 988	N2O processing improves the 4H-SiC : SiO2 interface Lipkin LA, Das MK, Palmour JW
989 - 992	Reduction of interface trap density in 4H-SiC MOS by high-temperature oxidation Okuno E, Amano S
993 - 996	Improving 4H-SiC/SiO2 interface properties by depositing ultra-thin Si nitride layer prior to formation of SiO2 and annealing Wang XW, Bu HM, Laube BL, Caragianis-Broadbridge C, Ma TP
997 - 1000	Improvement of SiO2/alpha-SiC interface properties by nitrogen radical treatment Maeyama Y, Yano H, Hatayama T, Uraoka Y, Fuyuki T, Shirafuji T
1001 - 1004	New evidence of interfacial oxide traps in n-type 4H-and 6H-SiC MOS structures Olafsson HO, Sveinbjornsson EO, Rudenko TE, Kilchytska VI, Tyagulski IP, Osiyuk IN
1005 - 1008	On shallow interface states in n type 4H-SiC metal-oxide-semiconductor structures Olafsson HO, Allerstam F, Sveinbjornsson EO
1009 - 1012	Effects of successive annealing of oxides on electrical characteristics of silicon carbide metal-oxide-semiconductor structures Yoshikawa M, Satoh M, Ohshima T, Itoh H
1013 - 1016	The investigation of 4H-SiC/SiO2 interfaces by optical and electrical measurements Ishida Y, Takahashi T, Okumura H, Jikimoto T, Tsuchida H, Yoshikawa M, Tomioka Y, Midorikawa M, Hijikata Y, Yoshida S
1017 - 1020	Characteristics of mobile ions in the SiO2 films of SiC-MOS structures Jang SJ, Song HJ, Oh KY, Lee KH, Lim YJ, Cho NI
1021 - 1024	Abnormal hysteresis property of SiC oxide C-V characteristics Choi JS, Lee WS, Shin DH, Lee HG, Kim YS, Park KH
1025 - 1028	ESR characterization of SiC bulk crystals and SiO2/SiC interface Isoya J, Kosugi R, Fukuda K, Yamasaki S
1029 - 1032	Characterization of the interfaces between SiC and oxide films by spectroscopic ellipsometry Tomioka Y, Iida T, Midorikawa M, Tukada H, Yoshimoto K, Hijikata Y, Yaguchi H, Yoshikawa M, Ishida Y, Kosugi R, Yoshida S
1033 - 1036	X-ray photoelectron spectroscopy studies of post-oxidation process effects on oxide/SiC interfaces Hijikata Y, Yaguchi H, Yoshikawa M, Yoshida S
1037 - 1040	SIMS analyses of SiO2/4H-SiC(0001) interface Yamashita K, Kitabatake M, Kusumoto P, Takahashi K, Uchida M, Miyanaga R, Itoh H, Yoshikawa M
1041 - 1044	Hall measurements of inversion and accumulation-mode 4H-SiC MOSFETs Chatty K, Banerjee S, Chow TP, Gutmann RJ, Arnold E, Alok D
1045 - 1048	Correlation between inversion channel mobility and interface traps near the conduction band in SiC MOSFETs Suzuki S, Harada S, Kosugi R, Senzaki J, Fukuda K
1049 - 1052	Influence of the wet re-oxidation procedure on inversion mobility of 4H-SiC MOSFETs Kosugi R, Okamoto M, Suzuki S, Senzaki J, Harada S, Fukuda K, Arai K
1053 - 1056	Influence of the crystalline quality of epitaxial layers on inversion channel mobility in 4H-SiC MOSFETs Kojima K, Ohno T, Suzuki S, Senzaki J, Harada S, Fukuda K, Kushibe M, Masahara K, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Yoshida S, Arai K
1057 - 1060	A large reduction in interface-state density for MOS capacitor on 4H-SiC (11(2)over-bar0) face using H-2 and H2O vapor atmosphere post-oxidation annealing Fukuda K, Senzaki J, Kushibe M, Kojima K, Kosugi R, Suzuki S, Harada S, Suzuki T, Tanaka T, Arai K
1061 - 1064	Significant improvement of inversion channel mobility in 4H-SiC MOSFET on (11(2)over-bar0) face using hydrogen post-oxidation annealing Senzaki J, Fukuda K, Kojima K, Harada S, Kosugi R, Suzuki S, Suzuki T, Arai K
1065 - 1068	4H-SiC MOSFETs on (03(3)over-bar8) face Hirao T, Yano H, Kimoto T, Matsunami H, Shiomi H
1069 - 1072	Improved channel mobility in normally-off 4H-SiC MOSFETs with buried channel structure Harada S, Suzuki S, Senzaki J, Kosugi R, Adachi K, Fukuda K, Arai K
1073 - 1076	4H-SiC ACCUFET with a two-layer stacked gate oxide Kaneko S, Tanaka H, Shimoida Y, Kiritani N, Tanimoto S, Yamanaka M, Hoshi M
1077 - 1080	4H-SiC delta-doped accumulation-channel MOS FET Yokogawa T, Takahashi K, Kusumoto O, Uchida M, Yamashita K, Kitabatake M
1081 - 1084	Channel engineering of buried-channel 4H-SiC MOSFET based on the mobility model of the oxide/4H-SiC interface Hatakeyama T, Harada S, Suzuki S, Senzaki J, Kosugi R, Fukuda K, Shinohe T, Arai K
1085 - 1088	TCAD optimisation of 4H-SiC channel-doped MOSFET with p-polysilicon gate Adachi K, Johnson CM, Arai K, Fukuda K, Harada S, Shinohe T
1089 - 1092	Hysteresis in transfer characteristics in 4H-SiC depletion/accumulation-mode MOSFETs Chatty K, Banerjee S, Chow TP, Gutmann RJ
1093 - 1096	Gamma-ray irradiation effects on the electrical characteristics of 6H-SiC MOSFETs with annealed gate-oxide Ohshima T, Lee KK, Ohi A, Yoshikawa M, Itoh H
1097 - 1100	Radiation response of p-channel 6H-SiC MOSFETs fabricated using pyrogenic conditions Lee KK, Ohshima T, Itoh H
1101 - 1104	Surface morphology and chemistry of 4H-and 6H-SiC after cyclic oxidation Okojie RS, Lukco D, Keys L, Tumakha S, Brillson LJ
1105 - 1108	Plasma oxidation of SiC at low temperatures (below 300 degrees C) Satoh M, Shimada H, Nakamura T, Nagamoto N, Yanagihara S
1109 - 1112	Low-temperature thermal oxidation of ion-amorphized 6H-SiC Nipoti R, Parisini A, Poggi A
1113 - 1116	Oxidation of porous 4H-SiC substrates Soloviev S, Das T, Sudarshan TS
1119 - 1124	Advances in SiC materials and technology for Schottky diode applications Di Cioccio L, Billon T
1125 - 1128	Comparison of 4H-SiC pn, pinch and Schottky diodes for the 3 kV range Peters D, Friedrichs P, Schorner R, Stephani D
1129 - 1132	A JBS diode with controlled forward temperature coefficient and surge current capability Dahlquist F, Lendenmann H, Ostling M
1133 - 1136	Impact of material defects on SiC Schottky barrier diodes Morisette DT, Cooper JA
1137 - 1140	A comparative study of the electrical properties of 4H-SiC epilayers with continuous and dissociated micropipes Kamata I, Tsuchida H, Jikimoto T, Izumi K
1141 - 1144	Analysis of high leakage currents in 4H-SiC Schottky barrier diodes using optical beam-induced current measurements Tsuji T, Izumi S, Ueda A, Fujisawa H, Ueno K, Tsuchida H, Kamata I, Jikimoto T, Izumi K
1145 - 1148	4H-SiC Schottky diodes with high on/off current ratio Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG
1149 - 1152	Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG, Gwilliam RM
1153 - 1156	Performance of 4H-SiC Schottky diodes with Al-doped p-guard-ring junction termination at reverse bias Felsl HP, Wachutka G
1157 - 1160	High-voltage pulse instabilities in SiC Schottky diodes with implanted resistive edge terminations Morisette DT, Cooper JA
1161 - 1164	Development of 600 V/8 A SiC Schottky diodes with epitaxial edge termination Templier F, Ferret P, Di Cioccio L, Collard E, Lhorte A, Billon T
1165 - 1168	Minimization of electric field enhancement at electrode edge by surface high resistive layer in Ti/4H-SiC Schottky barrier diode Ohtsuka K, Sugimoto H, Kinouchi S, Tarui Y, Imaizumi M, Takami T, Ozeki T
1169 - 1172	Reverse characteristics of a 4H-SiC Schottky barrier diode Hatakeyama T, Shinohe T
1173 - 1176	Power Schottky and p-n diodes on SiC epi-wafers with reduced micropipe density Syrkin A, Dmitriev V, Yakimova R, Henry A, Janzen E
1177 - 1180	4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW Alexandrov P, Wright B, Pan M, Weiner M, Fursin L, Zhao JH
1181 - 1184	Performance of SiC bipolar (PiN) and unipolar (SBD) power rectifiers in current-voltage-frequency parameter space Morisette DT, Cooper JA
1185 - 1190	Application-oriented unipolar switching SiC devices Friedrichs P, Mitlehner H, Schorner R, Dohnke KO, Elpelt R, Stephani D
1191 - 1194	High-performance UMOSFETs in 4H-SiC Li Y, Cooper JA, Capano MA
1195 - 1198	Large-area (3.3 mm x 3.3 mm) power MOSFETs in 4H-SiC Ryu SH, Agarwal A, Richmond J, Das M, Lipkin L, Palmour J, Saks N, Williams J
1199 - 1202	5.0 kV 4H-SiC SEMOSFET with low RonS of 88 m Omega cm(2) Sugawara Y, Asano K, Takayama D, Ryu S, Singh R, Palmour J, Hayashi T
1203 - 1206	Fabrication and initial characterization of 4H-SiC epilayer channel MOSFETs Imaizumi M, Tarui Y, Sugimoto H, Ohtsuka K, Takami T, Ozeki T
1207 - 1210	Optimized P-well profile preventing punch-through for 4H-SiC power MOSFETs Shimoida Y, Kaneko S, Tanaka H, Hoshi M
1211 - 1214	SiC vertical DACFET (Vertical delta-doped accumulation channel MOSFET) Kusumoto O, Yokogawa T, Yamashita K, Takahashi K, Kitabatake M, Uchida M, Miyanaga R
1215 - 1218	4H-and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching Wahab Q, Kosugi H, Yano H, Hallin C, Kimoto T, Matsunami H
1219 - 1222	A 600 VSiC trench JFET Gupta RN, Chang HR, Hanna E, Bui C
1223 - 1226	A novel high-voltage normally-off 4H-SiC vertical JFET Zhao JH, Li X, Tone K, Alexandrov P, Pan M, Weiner M
1227 - 1230	2 kV 4H-SiC junction FETs Onose H, Watanabe A, Someya T, Kobayashi Y
1231 - 1234	Design and processing of high-voltage 4H-SiC trench junction field-effect transistor Zhu L, Chow TP
1235 - 1238	Influence of trenching effect on the characteristics of buried-gate SiC junction field-effect transistors Koo SM, Lee SK, Zetterling CM, Ostling M, Forsberg U, Janzen E
1239 - 1242	Static and dynamic behaviour of SiC JFET/Si MOSFET cascade configuration for high-performance power switches Mihaila A, Udrea F, Azar R, Brezeanu G, Amaratunga G
1243 - 1246	Simulation study of a novel current-limiting device: A vertical alpha-SiC JFET - Controlled current limiter Tournier D, Godignon P, Planson D, Chante JP, Sarrus F
1247 - 1250	Realization of a high-current and low R-ON 600V current-limiting device Nallet F, Godignon P, Planson D, Raynaud C, Chante JP
1251 - 1254	Super-junction device forward characteristics and switched power limitations Adachi K, Johnson CM, Ohashi H, Shinohe T, Kinoshita K, Arai K
1255 - 1258	Silicon/oxide/silicon carbide (SiOSiC) - A new approach for high voltage, high frequencies integrated circuits Udrea F, Mihaila A, Azar R
1259 - 1264	High-power SiC diodes: Characteristics, reliability and relation to material defects Lendenmann H, Dahlquist F, Bergman JP, Bleichner H, Hallin C
1265 - 1268	High-temperature performance of 10 kilovolts, 200 amperes (pulsed) 4H-SiC PiN rectifiers Singh R, Irvine KG, Richmond JT, Palmour JW
1269 - 1272	Study of SiC PiN diodes subjected to high current density pulses Hillkirk LM, Bakowski M
1273 - 1276	High-voltage SiC pn diodes with avalanche breakdown fabricated by aluminum or boron ion implantation Negoro Y, Miyamoto N, Kimoto T, Matsunami H
1277 - 1280	Measurement and device simulation of avalanche breakdown in high-voltage 4H-SiC diodes including the influence of macroscopic defects Domeij M, Brunahl H, Ostling M
1281 - 1284	Microstructural characterization of recombination-induced stacking faults in high-voltage SiC diodes Liu JQ, Skowronski M, Hallin C, Soderholm R, Lendenmann H
1285 - 1288	Electrical characterization of high-voltage 4H-SiC diodes on high-temperature CVD-grown epitaxial layers Zimmermann U, Osterman J, Zhang J, Henry A, Hallen A
1289 - 1292	Study of 4H-SiC high-voltage bipolar diodes under reverse bias using electrical and OBIC characterization Isoird K, Lazar M, Locatelli ML, Raynaud C, Planson D, Chante JP
1293 - 1296	Photon emission analysis of defect-free 4H-SiC pn diodes in avalanche regime Banc C, Bano E, Ouisse T, Vassilevski K, Zekentes K
1297 - 1300	Electroluminescence analysis of Al+ and B+ implanted pn diodes Fujisawa H, Tsuji T, Izumi S, Ueno K, Kamata I, Tsuchida T, Jikimoto T, Izumi K
1301 - 1304	An effective high-voltage termination for SiC planar pn junctions for use in high-voltage devices and UV detectors Brezeanu G, Badila M, Godignon P, Millan J, Udrea F, Mihaila A, Amaratunga G
1305 - 1308	A novel technology for the formation of a very small bevel angle for edge termination Yan F, Qin C, Zhao JH
1309 - 1312	The deep boron level in high-voltage PiN diodes Aberg D, Hallen A, Osterman J, Zimmermann U, Svensson BG
1313 - 1316	Electrical characteristics of 4H-SiC pn diode grown by LPE method Kuznetsov N, Bauman D, Gavrilin A, Kalinina EV
1317 - 1320	Highly-doped implanted pn junction for SiC Zener diode fabrication Godignon P, Jorda X, Nipoti R, Cardinali G, Mestres N
1321 - 1324	Unipolar and bipolar SiC integral cascoded switches with MOS and junction gate - Simulation study Bakowski M, Gustafsson U
1325 - 1328	All-SiC inductively-loaded half-bridge inverter characterization of 4H-SiC power BJTs up to 400V/22 A Luo Y, Fursin L, Zhao JH, Alexandrov P, Wright B, Weiner M
1329 - 1332	Improvement and analysis of implanted-emitter bipolar junction transistors in 4H-SiC Tang Y, Fedison JB, Chow TP
1333 - 1336	On the temperature coefficient of 4H-SiC npn transistor current gain Li X, Luo Y, Zhao JH, Alexandrov P, Pan M, Weiner M
1337 - 1340	Investigation of thermal properties in fabricated 4H-SiC high-power bipolar transistors Danielsson E, Zetterling CM, Ostling M, Forsberg U, Janzen E
1341 - 1343	Hybrid MOS-gated bipolar transistor using 4H-SiC BJT Tang Y, Chow TP, Agarwal AK, Ryu SH, Palmour JW
1345 - 1348	A novel, planar 3,000 V normally-off field gated bipolar transistor in 4H-SiC Li X, Fursin L, Zhao JH, Alexandrov P, Pan M, Weiner M, Burke T, Khalil G
1349 - 1352	Dynamic performance of 3.1 kV 4H-SiC asymmetrical GTO thyristors Agarwal AK, Ivanov PA, Levinshtein ME, Palmour JW, Rumyantsev SL
1353 - 1358	4H-SiC IMPATT diode fabrication and testing Vassilevski KV, Zorenko AV, Zekentes K, Tsagaraki K, Bano E, Banc C, Lebedev AA
1359 - 1362	Demonstration of IMPATT diode oscillators in 4H-SiC Yuan L, Cooper JA, Webb KJ, Melloch MR
1363 - 1366	Influence of semi-insulating substrate purity on the output characteristics of 4H-SiC MESFETs Sghaier N, Bluet JM, Souifi A, Guillot G, Morvan E, Brylinski C
1367 - 1370	Development and demonstration of high-power X-band SiC MESFETs Chang HR, Hanna E, Hacker J, Hackett R, Bui C
1371 - 1374	Hot-carrier luminescence in 4H-SiC MESFETs Banc C, Bano E, Ouisse T, Noblanc O, Brylinski C
1375 - 1378	High-performance silicon carbide MESFET utilizing lateral epitaxy Konstantinov AO, Harris CI, Ericsson P
1379 - 1382	Influence of gate finger width on RF characteristics of 4H-SiC MESFET Arai M, Honda H, Ogata M, Sawazaki H, Ono S
1383 - 1386	Fabrication of 4H-SiC planar MESFETs having low contact resistance Na HJ, Kim HJ, Adachi K, Kiritani N, Tanimoto S, Okushi H, Arai K
1387 - 1390	Surface control of 4H-SiC MESFETs Hilton KP, Uren MJ, Hayes DG, Johnson HK, Wilding PJ
1391 - 1394	Characteristics of MESFETs made by ion-implantation in bulk semi-insulating 4H-SiC Mitra S, Tucker JB, Rao MV, Papanicolaou N, Jones KA
1395 - 1398	Evaluation of SiC MESFET structures using large-signal time-domain simulations Jonsson R, Eriksson J, Wahab Q, Rudner S, Rorsman N, Zirath H, Svensson C
1399 - 1402	4H-SiC MESFET large-signal modeling using modified Materka model Lee S, Song NJ, Burm J, An C
1403 - 1406	Compatibility of VJFET technology with MESFET fabrication and its interest for system integration: Fabrication of 6H and 4H-SiC 110 V lateral MESFET Tournier D, Godignon P, Montserrat J, Planson D, Chante JP, Sarrus F
1407 - 1410	The development of ultra-high frequency power 6H-SiC vertical static induction transistor with p-n junction as a gate Sankin VI, Shkrebiy PP, Kuznetsov AN, Savkina NA
1411 - 1414	Silicon carbide microwave limiters Syrkin A, Dmitriev V, Lapidus A
1415 - 1418	MISiCFET chemical gas sensors for high temperature and corrosive environment applications Spetz AL, Uneus L, Svenningstorp H, Wingbrant H, Harris CI, Salomonsson P, Tengstrom P, Martensson P, Ljung P, Mattsson M, Visser JH, Ejakov SG, Kubinski D, Ekedahl LG, Lundstrom I, Savage SM
1419 - 1422	The effect of hydrogen diffusion in p- and n-type SiC Schottky diodes at high temperatures Uneus L, Nakagomi S, Linnarsson M, Janson MS, Svensson BG, Yakimova R, Syvajarvi M, Henry A, Janzen E, Ekedahl LG, Lunstrom I, Spetz AL
1423 - 1426	Influence of epitaxial layer on SiC Schottky diode gas sensors operated under high-temperature conditions Nakagomi S, Shinobu H, Uneus L, Lundstrom I, Ekedahl LG, Yakimova R, Syvajarvi M, Henry A, Janzen E, Spetz AL
1427 - 1430	A new type of SiC gas sensor with a pn-junction structure Nakashima K, Okuyama Y, Ando S, Eryu O, Abe K, Yokoi H, Oshima T
1431 - 1434	Demonstration of 4H-SiC avalanche photodiode linear array Yan F, Qin C, Zhao JH, Bush M, Olsen GH
1435 - 1438	4H-SiC material for Hall effect and high-temperature sensors working in harsh environments Robert JL, Contreras S, Camassel J, Pernot J, Juillaguet S, Di Cioccio L, Billon T
1439 - 1442	N and p type 6H-SiC films for the creation diode and triode structure of nuclear particle detectors Ivanov AM, Strokan NB, Lebedev AA, Davydov DV, Savkina NS, Bogdanova EV
1445 - 1448	Sublimation growth of bulk AlN crystals: Materials compatibility and crystal quality Epelbaum BM, Hofmann D, Bickermann M, Winnacker A
1449 - 1452	Crystal growth of aluminum nitride by sublimation close space technique Furusho T, Ohshima S, Nishino S
1453 - 1456	Aluminium nitride bulk crystals by sublimation method: Growth and X-ray characterization Dorozhkin SI, Lebedev AO, Maximov AY, Tairov YM
1457 - 1460	Heteroepitaxial growth of insulating AlN on 6H-SiC by MBE Onojima N, Suda J, Matsunami H
1461 - 1464	RHEED studies of in effect on the N-polarity GaN surface kinetics modulation in plasma-assisted molecular-beam epitaxy Shen XQ, Ide T, Shimizu M, Okumura H
1465 - 1468	Surface morphology of GaN epilayer with SixN1-x buffer layer grown by ammonia-source MBE Shimizu M, Ohkita H, Suzuki A, Okumura H
1469 - 1472	Growth of AlN films by hot-wall CVD and sublimation techniques: Effect of growth cell pressure Kakanakova-Georgieva A, Forsberg U, Magnusson B, Yakimova R, Janzen E
1473 - 1476	GaN grown by hydride-metal organic vapor phase epitaxy (H-MOVPE) on lattice-matched oxide and silicon substrates Mastro M, Kryliouk OM, Dann T, Anderson TJ, Nikolaev AE, Melnik YV, Dmitriev VA
1477 - 1480	Growth and characterization of GaGdN and AlGdN on SiC by RF-MBE Teraguchi N, Suzuki A, Nanishi Y
1481 - 1484	Growth of epitaxial (SiC)(x)(AlN)(1-x) thin films on 6H-SiC by ion-assisted dual magnetron sputter deposition Tungasmita S, Persson POA, Seppanen T, Hultman L, Birch J
1485 - 1488	Silicon carbide buffer layers for nitride growth on Si Masri P, Herro Z, Stauden T, Pezoldt J, Sumiya M, Averous M
1489 - 1492	Crystallographic growth models of wurtzite-type thin films on 6H-SiC Ohsato H, Wada K, Kato T, Sun CJ, Razeghi M
1493 - 1496	Photoluminescence and electroluminescence characterization of InxGa1-x/InyGa1-yN multiple quantum well light emitting diodes Bergman JP, Pozina G, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
1497 - 1500	Photoreflectance characterization of GaNAs/GaAs multiple quantum well structures Lu CR, Lee JR, Chen YY, Lee WI, Lee SC
1501 - 1504	Raman scattering from wurtzite GaN bulk crystal Verma P, Yamada A
1505 - 1510	Recent progress of AlGaN/GaN heterojunction FETs for microwave power applications Miyamoto H
1511 - 1514	High performance AlGaN/GaN HEMTs with recessed gate Sano Y, Mita J, Yamada T, Makita T, Kaifu K, Ishikawa H, Egawa T, Jimbo T
1515 - 1518	Broadband push-pull microwave power amplifier using AlGaN/GaN HEMTs on SiC Lee JW, Webb KJ
1519 - 1522	Temperature dependence of DC characteristics in AlN/GaN metal insulator semiconductor field effect transistor Ide T, Shimizu M, Suzuki A, Shen XQ, Okumura H, Nemoto T
1523 - 1526	Thermal analysis of GaN-based HFET devices using the unit thermal profile approach Park J, Lee CC, Kim JW, Lee JS, Lee WS, Shin JH, Shin MW
1527 - 1530	AlGaN/GaN hetero field-effect transistor for a large current operation Yoshida S, Ishii H, Li J
1531 - 1534	Gallium nitride power device design tradeoffs Matocha K, Chow TP, Gutmann RJ
1535 - 1538	Gallium nitride metal-insulator-semiconductor capacitors using low-pressure chemical vapor deposited oxides Matocha K, Chow TP, Gutmann RJ