Materials Science Forum

Materials Science Forum, Vol.338-3 Entire volume, number list

ISSN: 0255-5476 (Print)

In this Issue (401 articles)

3 - 8	Status of large diameter SiC crystal growth for electronic and optical applications Hobgood D, Brady M, Brixius W, Fechko G, Glass R, Henshall D, Jenny J, Leonard R, Malta D, Muller S, Tsvetkov V, Carter C
9 - 12	Large diameter PVT growth of bulk 6H SiC crystals Snyder DW, Heydemann VD, Everson WJ, Barrett DL
13 - 16	Progress in SiC bulk growth Anikin M, Chaix O, Pernot E, Pelissier B, Pons M, Pisch A, Bernard C, Grosse P, Faure C, Grange Y, Basset G, Moulin C, Madar R
17 - 20	Generation and properties of semi-insulating SiC substrates Wang SP, Powell A, Redwing J, Piner E, Saxler AW
21 - 24	Vanadium-free semi-insulating 4H-SiC substrates Mitchel WC, Saxler A, Perrin R, Goldstein J, Smith SR, Evwaraye AO, Solomon JS, Brady M, Tsvetkov V, Carter CH
25 - 30	Numerical simulation of SiC boule growth by sublimation Madar R, Pons M, Dedulle JM, Blanquet E, Pisch A, Grosse P, Faure C, Anikin M, Bernard C
31 - 34	Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth Selder M, Kadinski L, Durst F, Straubinger T, Hofmann D, Wellmann P
35 - 38	An analytical study of the SiC growth process from vapor phase Cherednichenko DI, Khlebnikov YI, Khlebnikov II, Soloviev SI, Sudarshan TS
39 - 42	Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions Straubinger TL, Bickermann M, Grau M, Hofmann D, Kadinski L, Muller SG, Selder M, Wellmann PJ, Winnacker A
43 - 46	Experimental and theoretical analysis of the thermal conductivity of SiC powder as source material for SiC bulk growth Muller SG, Fricke J, Hofmann D, Horn R, Nilsson O, Rexer B
47 - 50	Seed surface preparation for SiC sublimation growth Pelissier B, Moulin C, Pernot E, Anikin M, Grosse P, Faure C, Ferrand B, Couchaud M, Basset G, Madar R
51 - 54	Single crystal growth of 6H-SiC on saw-damaged substrate by sublimation method Okada S, Nishiguchi T, Shimizu T, Sasaki M, Oshima S, Nishino S
55 - 58	Thermal decomposition cavities in physical vapor transport grown SiC Sanchez EK, Heydemann VD, Snyder DW, Rohrer GS, Skowronski M
59 - 62	Initial stage of crystallization in the growth of silicon carbide on substrates with micropipes Khlebnikov I, Cherednichenko D, Khlebnikov Y, Sudarshan TS
63 - 66	Nucleation of dislocations during physical vapor transport growth of silicon carbide Sanchez EK, Heydemann VD, Snyder DW, Rohrer GS, Skowronski M
67 - 70	Plastic deformation and residual stresses in SiC boules grown by PVT Ha S, Rohrer GS, Skowronski M, Heydemann VD, Snyder DW
71 - 74	Digital x-ray imaging of SiCPVT process: Analysis of crystal growth and powder source degradation Wellmann PJ, Bickermann M, Hofmann D, Kadinski L, Selder M, Straubinger TL, Winnacker A
75 - 78	SiC single crystal growth rate measurement by in-situ observation using the transmission X-ray technique Oyanagi N, Nishizawa S, Kato T, Yamaguchi H, Arai K
79 - 82	Role of temperature gradient in bulk crystal growth of SiC Balkas CM, Maltsev AA, Roth MD, Yushin NK
83 - 86	Pressure effect in sublimation growth of bulk SiC Kitou Y, Bahng W, Nishizawa S, Nishino S, Arai K
87 - 90	Study of nitrogen incorporation in 6H-SiC single crystals grown by PVT Schulz D, Irmscher K, Dolle J, Eiserbeck W, Muller T, Rost HJ, Siche D, Wagner G, Wollweber J
91 - 94	Evaporation behavior of SiC powder for single crystal growth -An experimental study on thermodynamics and kinetics Pisch A, Ferraria AM, Chatillon C, Blanquet E, Pons M, Bernard C, Anikin M, Madar R
95 - 98	Considerations on the crystal morphology in the sublimation growth of SiC Raback P, Yakimova R, Syvajarvi M, Iakimov T, Nieminen R, Janzen E
99 - 102	Shape of SiC bulk single crystal grown by sublimation Nishizawa S, Kitou Y, Bahng W, Oyanagi N, Khan MN, Arai K
103 - 106	Enlargement of SiC single crystal: Enhancement of lateral growth using tapered graphite lid Bahng W, Kitou Y, Nishizawa S, Yamaguchi H, Khan MN, Oyanagi N, Arai K, Nishino S
107 - 110	Top-seeded solution growth of bulk SiC: Search for fast growth regimes Epelbaum BM, Hofmann D, Muller M, Winnacker A
111 - 114	Controlled growth of bulk 15R-SiC single crystals by the modified Lely method Schulze N, Barrett D, Weidner M, Pensl G
115 - 118	Crystal growth of 15R-SiC boules by sublimation method Nishiguchi T, Okada S, Sasaki M, Harima H, Nishino S
119 - 122	Growth of 3C SiC singe crystals from convection dominated melts Wollweber J, Chevrier V, Siche D, Duffar T
125 - 130	An overview of SiC growth Matsunami H
131 - 136	Fast SiC epitaxial growth in a chimney CVD reactor and HTCVD crystal growth developments Ellison A, Zhang J, Magnusson W, Henry A, Wahab Q, Bergman JP, Hemmingsson C, Son NT, Janzen E
137 - 140	Morphology control for growth of thick epitaxial 4H SiC layers Zhang J, Ellison A, Janzen E
141 - 144	Vertical hot-wall type CVD for SiC growth Takahashi K, Uchida M, Kitabatake M, Uenoyama T
145 - 148	LPCVD growth and structural properties of 4H-SiC epitaxial layers Tsuchida H, Kamata I, Jikimoto T, Izumi K
149 - 152	3-D computational modeling of SiC epitaxial growth in a hot wall reactor Ji W, Lofgren PM, Hallin C, Gu CY
153 - 156	3-d thermal and flow modeling of hot wall epitaxial chemical vapor deposition reactors, heated by induction Lofgren PM, Hallin C, Gu CY, Ji W
157 - 160	The development of resistive heating for the high temperature growth of alpha-SiC using a vertical CVD reactor Eshun E, Taylor C, Diagne NF, Griffin J, Spencer MG, Ferguson L, Gurary A, Stall R
161 - 164	Initial results on thick 4H-SiC epitaxial layers grown using vapor phase epitaxy Rowland LB, Dunne GT, Freitas JA
165 - 168	High growth rate epitaxy of thick 4H-SiC layers Syvajarvi M, Yakimova R, Jacobsson H, Linnarsson MK, Henry A, Janzen E
169 - 172	Competitive growth between deposition and etching in 4H-SiC CVD epitaxy using quasi-hot wail reactor Kushibe M, Ishida Y, Okumura H, Takahashi T, Masahara K, Ohno T, Suzuki T, Tanaka T, Yoshida S, Arai K
173 - 176	Multi-wafer VPE growth and characterization of SiC epitaxial layers Nordby HD, O'Loughlin MJ, MacMillan MF, Burk AA, Oliver JD
177 - 180	Homoepitaxy of silicon carbide using the single precursor 1,3-disilabutane Lee SY, Lee KW, Kim Y
181 - 184	Supersonic seeded beam assisted growth of epitaxial silicon carbide Jamison KD, Kempel ML, Woodin RL, Shovlin JD, Beck D, Li Q, Kordesch ME
185 - 188	4H-SiC substrate orientation effects on hydrogen etching and epitaxial growth Landini BE, Brandes GR
189 - 192	4H-SiC (11(2)over-bar-0) epitaxial growth Kimoto T, Yamamoto T, Chen ZY, Yano H, Matsunami H
193 - 196	Homoepitaxial growth of 6H SiC on single crystalline spheres Christiansen K, Christiansen S, Strunk HP, Helbig R
197 - 200	Morphological stability of 6H-SiC epitaxial layer on hemispherical substrates prepared by chemical vapor deposition Nishino S, Nishio Y, Masuda Y, Chen Y, Jacob C
201 - 204	Growth of SiC on 6H-SIC {01(1)over-bar-4} substrates by gas source molecular beam epitaxy Nakamura S, Hatayama T, Kimoto T, Fuyuki T, Matsunami H
205 - 208	Molecular beam epitaxial growth of heteropolytypic and low-dimensional structures of SiC Fissel A, Kaiser U, Schroter B, Krausslich J, Hobert H, Richter W
209 - 212	Thermodynamical consideration of the epitaxial growth of SiC polytypes Fissel A
213 - 216	Mechanisms of SiC(111) step flow growth Stout PJ
217 - 220	Mechanism of various defects formation in epitaxial layer prepared by sublimation epitaxy Furusho T, Matsumoto K, Harima H, Nishino S
221 - 224	Investigation of 3C-SiC epitaxial layers grown by sublimation epitaxy Davydov DV, Lebedev AA, Tregubova AS, Kozlovski VV, Kuznetsov AN, Bogdanova EV
225 - 228	Growth of SiC and GaN on porous buffer layers Mynbaeva M, Savkina N, Tregubova A, Scheglov M, Lebedev A, Zubrilov A, Titkov A, Kryganovski A, Mynbaev K, Seredova N, Tsvetkov D, Stepanov S, Cherenkov A, Kotousova I, Dimitriev VA
229 - 232	4H-SiC layers grown by liquid phase epitaxy on 4H-SiC off-axis substrates Kuznetsov N, Morozov A, Bauman D, Ivantsov V, Sukhoveev V, Nikitina I, Zubrilov A, Rendakova S, Dimitriev VA, Hofman D, Masri P
233 - 236	Temperature gradient effect on SiC epitaxy in liquid phase Khan MN, Nishizawa S, Bahng W, Arai K
237 - 240	Micropipe healing in liquid phase epitaxial growth of SiC Yakimova R, Syvajarvi M, Rendakova S, Dimitriev VA, Henry A, Janzen E
241 - 244	Growth of CVD thin films and thick LPE 3C SiC in a specially designed reactor Leycuras A
245 - 248	Lateral Epitaxial Overgrowth and pendeo epitaxy of 3C-SiC on Si substrates Saddow SE, Carter GE, Geil B, Zheleva T, Melnychuck G, Okhuysen ME, Mazzola MS, Vispute RD, Derenge M, Ervin M, Jones KA
249 - 252	Selective epitaxial growth of silicon carbide on patterned silicon substrates using hexachlorodisilane and propane Jacob C, Hong MH, Chung J, Pirouz P, Nishino S
253 - 256	The APD annihilation mechanism of 3C-SiC hetero-epilayer on Si(001) substrate Ishida Y, Takahashi T, Okumura H, Sekigawa T, Yoshida S
257 - 260	Improvement of 3C-SiC surface morphology on Si(100) by adding HCl using atmospheric CVD Chen Y, Masuda Y, Jacob C, Shirafuji T, Nishino S
261 - 264	Carbonization on (100) silicon for heteroepitaxial growth of 3C-SiC Shimizu H, Ohba T
265 - 268	Growth of 3C-SiC/Si multilayer heterostructures by supersonic free jets Ikoma Y, Endo T, Tada T, Watanabe F, Motooka T
269 - 272	Formation of high quality SiC on Si(100) at 900 degrees C using monomethylsilane gas-source MBE Nakazawa H, Suemitsu M, Asami S
273 - 276	Growth and characterization of N-doped SiC films from trimethylsilane Chen J, Steckl AJ, Loboda MJ
277 - 280	The effect of Ge on the structure & morphology of SiC films grown on (111) Si substrates Sarney WL, Salamanca-Riba L, Zhou P, Taylor C, Spencer MG, Vispute RD, Jones KA
281 - 284	In situ monitoring of the effect of Ge on the SiC growth on (111)Si surfaces Wohner T, Stauden T, Schaefer JA, Pezoldt J
285 - 288	Structural investigations of the nucleation and growth of SiC during rapid thermal conversion of (111)Si Cimalla V, Attenberger W, Lindner JKN, Stritzker B, Pezoldt J
289 - 292	The influence of foreign atoms on the early stages of SiC growth on (111)Si Pezoldt J, Masri P, Laridjani MR, Averous M, Wohner T, Schaefer JA, Stauden T, Ecke G, Pieterwas R, Spiess L
293 - 296	Studies of the initial stages of silicon carbide growth using molecular hydrocarbon and methyl radical gas species Gold JS, Lannon JS, Tolani VL, Ziemer KS, Stinespring CD
297 - 300	Carbonization of SIMOX substrates for fabrication of single-crystal SiC-on-insulator Harada S, Arita M, Ikoma Y, Motooka T
301 - 304	SOL thinning effects on 3C-SiC on SOI Planes N, Moller H, Camassel J, Stoemenos Y, Falkovski L, Eickhoff M, Krotz G
305 - 308	Low temperature growth of 3C-SiC on silicon for advanced substrate development Okhuysen ME, Mazzola MS, Lo YH
309 - 312	Epitaxial growth of beta-SiC on ion-beam synthesized beta-SiC: Structural characterization Romano-Rodriguez A, Perez-Rodriguez A, Serre C, Morante JR, Esteve J, Acero MC, Kogler R, Skorupa W, Ostling M, Nordell N, Karlsson S, Van Landuyt J
313 - 316	Growth of single crystalline 3C-SiC and AlN on Si using porous Si as a compliant seed crystal Purser D, Jenkins M, Lieu D, Vaccaro F, Faik A, Hasan MA, Leamy HJ, Carlin C, Sardela MR, Zhao QX, Willander M, Karlsteen M
317 - 320	The growth and characterization of 3C-SiC/SiNx/Si structure Kim KC, Park CI, Nahm KS, Suh EK
321 - 324	The diffusion coefficient of silicon in thin SiC layers as a criterion for the quality of the grown layers Cimalla V, Wohner T, Pezoldt J
325 - 328	Plasma enhanced chemical vapor deposition and characterization of hydrogenated amorphous SiC films on Si Wang YH, Lin JY, Feng ZC, Chua SJ, Alfred CHH
329 - 332	Thin films of a-Si1-xCx : H deposited by PECVD: The r.f. power and H-2 dilution role Prado RJ, Fantini MCA, Tabacniks MH, Pereyra I, Flank AM
335 - 340	Surface composition of 4H-SiC as a function of temperature Bryant KW, Bozack MJ
341 - 344	Stacking rearrangement on SiC surfaces: A possible seed for polytype heterostructure growth Starke U, Bernhardt J, Schardt J, Seubert A, Heinz K
345 - 348	Atomic structure of 6H-SiC(000(1)over-bar)-(2x2)(c) Bernhardt J, Seubert A, Nerding M, Starke U, Heinz K
349 - 352	Ab initio calculation on clean and oxygen covered 6H-SiC(0001) surfaces: (root 3 x root 3)R30 degrees reconstruction Lu WC, Kruger P, Pollmann J
353 - 356	Photo-emission electron microscopy (PEEM) of cleaned and etched 6H-SiC(0001) Hartman JD, Naniwae K, Petrich C, Ramachandran V, Feenstra RM, Nemanich RJ, Davis RF
357 - 360	High resolution electron energy loss spectroscopy of root 3 x root 3 6H-SiC(0001) Takahashi K, Uchida M, Kitabatake M
361 - 364	In-situ RHEED analysis during alpha-SiC homoepitaxy on (0001)Si- and (000(1)over-bar)C-faces by gas source molecular beam epitaxy Hatayama T, Fuyuki T, Nakamura S, Kurobe K, Kimoto T, Matsunami H
365 - 368	(10(1)over-bar-0)- and (11(2)over-bar-0)-surfaces in 2H-, 4H-and 6H-SiC Rauls E, Hajnal Z, Deak P, Frauenheim T
369 - 374	Theory of structural and electronic properties of cubic SiC surfaces Pollmann J, Kruger P, Lu WC
375 - 378	Characterization of anisotropic step-bunching on as-grown SiC surfaces Syvajarvi M, Yakimova R, Iakimov T, Janzen E
379 - 382	Observation of macrostep formation on the (0001) facet of bulk SiC crystals Ohtani N, Katsuno M, Aigo T, Yashiro H, Kanaya M
383 - 386	Silicate monolayers on the hexagonal surfaces of 4H-and 6H-SiC Bernhardt J, Schardt J, Starke U, Heinz K
387 - 390	Electronic and atomic structure of an ordered silicate adlayer on hexagonal SiC Hollering M, Sieber N, Maier F, Ristein J, Ley L, Riley JD, Leckey RCG, Leisenberger F, Netzer F
391 - 394	Photoemission study of the silicate adlayer reconstruction on Si-terminated 6H-SiC (0001) Sieber N, Hollering M, Ristein J, Ley L
395 - 398	Initial oxidation of the Si-terminated 6H-SiC(0001) 3x3 surface Amy F, Hwu YK, Brylinski C, Soukiassian P
399 - 402	XPS analysis of SiO2/SiC interface annealed in nitric oxide ambient Li HF, Dimitrijev S, Sweatman D, Harrison HB
403 - 406	Surface studies on thermal oxidation on 4H-SiC epilayer Koh A, Kestle A, Wilks SP, Dunstan PR, Wright CJ, Pritchard M, Pope G, Mawby PA, Bowen WR
407 - 410	Quantified conditions for reduction of ESO contamination during SiC metalization McDaniel GY, Fenstermaker ST, Walker DE, Lampert WV, Mukhopadhyay SM, Holloway PH
411 - 414	Thermal annealing effect on TiN/Ti layers on 4H-SiC: Metal-semiconductor interface characterization Defives D, Durand O, Wyczisk F, Olivier J, Noblanc O, Brylinski C
415 - 418	A surface/interfacial structural model of Pd ultra-thin film on SiC at elevated temperatures Lu WJ, Shi DT, Crenshaw TR, Burger A, Collins WE
419 - 422	Study of a clean surface of alpha-SiC and its metallization process by Cu, Au and Ni using STM and electron/photon spectroscopies Iwami M, Hirai M, Kusaka M, Mihara I, Saito T, Yamaguchi M, Morii T, Watanabe M
423 - 426	Monolayer growth modes of Re and Nb on the polar faces of 4H-SiC Bryant KW, Bozack MJ
427 - 430	Group-III adsorption and bond stacking on SiC(111) surfaces Grossner U, Furthmuller J, Bechstedt F
431 - 436	Characterization of SiC using synchrotron white beam X-ray topography Dudley M, Huang XR
437 - 440	Growth of low micropipe density SiC wafers Powell A, Wang SP, Brandes G
441 - 444	Investigation of the origin of micropipe defect Okamoto A, Sugiyama N, Tani T, Kamiya N
445 - 448	Analysis on the formation and elimination of filamentary and planar voids in silicon carbide bulk crystals Hofmann D, Bickermann M, Hartung W, Winnacker A
449 - 452	Origin of the internal stress around the micropipe of 6H-SiC single crystal Kato T, Ohsato H, Okuda T
453 - 456	Structural investigation on the nature of surface defects present in silicon carbide wafers containing varying amount of micropipes Shamsuzzoha M, Saddow SE, Schattner TE, Jin L, Dudley M, Rendakova SV, Dmitriev VA
457 - 460	In-situ observation of SiC bulk single crystal growth by x-ray topography Kato T, Oyanagi N, Yamaguchi H, Takano Y, Nishizawa S, Arai K
461 - 464	X-ray topographic study of SiC crystal at high temperature Yamaguchi H, Oyanagi N, Kato T, Takano Y, Nishizawa S, Bahng W, Yoshida S, Arai K
465 - 468	Synchrotron white beam topography studies of 2H SiC crystals Dudley M, Huang W, Vetter WM, Neudeck P, Powell JA
469 - 472	Synchrotron white beam x-ray topography and atomic force microscopy studies of a 540R-SiC Lely platelet Vetter WM, Dudley M, Huang W, Neudeck P, Powell JA
473 - 476	X-ray characterization of 3 inch diameter 4H and 6H-SiC experimental wafers Kuhr TA, Vetter WM, Dudley M, Skowronski M
477 - 480	Origin of threading dislocation arrays in SiC boules grown by PVT Ha S, Nuhfer NT, De Graef M, Rohrer GS, Skowronski M
481 - 484	Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching Henkel T, Ferro G, Nishizawa S, Pressler H, Tanaka Y, Tanoue H, Kobayashi N
485 - 488	Polytype and defect control of two inch diameter bulk SiC Sasaki M, Shiomi H, Harima H, Nishino S
489 - 492	Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes Schnabel CM, Tabib-Azar M, Neudeck PG, Bailey SG, Su HB, Dudley M, Raffaelle RP
493 - 496	Investigation of low angle grain boundaries in modified-Lely SiC crystals by high resolution x-ray diffractometry Katsuno M, Ohtani N, Aigo T, Yashiro H, Kanaya M
497 - 500	Structural, electrical and optical properties of bulk 4H and 6H p-type SiC Kalinina EV, Zubrilov AS, Kuznetsov NI, Nikitina IP, Tregubova AS, Shcheglov MP, Bratus VY
501 - 504	High order x-ray diffraction and internal atomic layer roughness of epitaxial and bulk SiC materials Xu G, Feng ZC
505 - 508	4H-SiC CVD epitaxial layers with improved structural quality grown on SiC wafers with reduced micropipe density Kalinina EV, Zubrilov A, Solov'ev V, Kuznetsov NI, Hallen A, Konstantinov A, Karlsson S, Rendakova S, Dmitriev V
509 - 512	Structural and optical studies of low-doped n-6H SiC layers grown by vacuum sublimation Savkina NS, Lebedev AA, Tregubova AS, Scheglov MP
513 - 516	Stacking fault energy of 6H-SiC and 4H-SiC single crystals Hong MH, Samant AV, Pirouz P
517 - 520	Deformation tests on 4H-SiC single crystals between 900 degrees C and 1360 degrees C and the microstructure of the deformed samples Demenet JL, Hong MH, Pirouz P
521 - 524	Void shapes in the Si(111) substrate at the heteroepitaxial thin film Si interface Jinschek J, Kaiser U, Richter W
525 - 528	Defect characterization in 3C-SiC films grown on thin and thick silicon top layers of SIMOX Hong MH, Chung J, Namavar F, Pirouz P
529 - 532	Structural characteristics of 3C-SiC films epitaxially grown on the Si/Si3N4/SiO2 system Zappe S, Moller H, Krotz G, Eickhoff M, Skorupa W, Obermeier E, Stoemenos J
533 - 536	Illusion of new polytypes Kaiser U, Chuvilin A, Richter W
537 - 540	Microstructural, optical and electronic investigation of anodized 4H-SiC Zangooie S, Persson POA, Hilfiker JN, Hultman L, Arwin H, Wahab Q
541 - 544	Characterization of polycrystalline SiC grown on SiO2 and Si3N4 by APCVD for MEMS applications Wu CH, Zorman CA, Mehregany M
545 - 550	Theory of below gap absorption bands in n-type SiC polytypes; Or, how SiC got its colors Lambrecht WRL, Limpijumnong S, Rashkeev S, Segall B
551 - 554	Absorption bands associated with conduction bands and impurity states in 4H and 6H SiC Sridhara SG, Bai S, Shigiltchoff O, Devaty RP, Choyke WJ
555 - 558	Determination of the polarization dependence of the free-carrier-absorption in 4H-SiC at high-level photoinjection Grivickas V, Galeckas A, Grivickas P, Linnros J
559 - 562	Bandstructure and transport properties of 4H-and 6H-SiC: Optically detected cyclotron resonance investigations Meyer BK, Hofmann DM, Volm D, Chen WM, Son NT, Janzen E
563 - 566	Hole effective masses in 4H SiC determined by optically detected cyclotron resonance Son NT, Hai PN, Chen WM, Hallin C, Monemar B, Janzen E
567 - 570	Differential absorption measurement of valence band splittings in 4H SiC Sridhara SG, Bai S, Shigiltchoff O, Devaty RP, Choyke WJ
571 - 574	Anisotropic dielectric function properties of semi-insulating 4H-SiC determined from spectroscopic ellipsometry Kildemo M, Mooney MB, Kelly PV, Sudre C, Crean GM
575 - 578	Optical characterization of 4H-SiC by variable angle of incidence spectroscopic ellipsometry Lindquist OPA, Arwin H, Forsberg U, Bergman JP, Jarrendahl K
579 - 582	Isotope effects on the Raman spectrum of SiC Rohmfeld S, Hundhausen M, Ley L, Schulze N, Pensl G
583 - 586	Disappearance of the LO-phonon line in the UV-Raman spectrum of 6H-SiC Pusche R, Rohmfeld S, Hundhausen M, Ley L
587 - 590	Selectively resonant Raman spectra of folded phonon modes in SiC Tomita T, Saito S, Baba M, Hundhausen M, Suemoto T, Nakashima S
591 - 594	Raman spectral profiles of folded longitudinal modes in SiC under off-resonant condition Nakashima S, Harima H, Tomita T, Suemoto T
595 - 598	Raman spectroscopy on biaxially strained epitaxial layers of 3C-SiC on Si Rohmfeld S, Hundhausen M, Ley L, Zorman CA, Mehregany M
599 - 602	Characterization of 3C-SiC/SOI deposited with HMDS Planes N, Aboughe-Nze P, Ravetz M, Contreras S, Vicente P, Chassagne T, Fraisse B, Camassel J, Monteil Y, Rushworth S
603 - 606	Raman imaging characterization of electric properties of SiC near a micropipe Harima H, Hosoda T, Nakashima S
607 - 610	Carrier density evaluation in p-type SiC by Raman scattering Harima H, Hosoda T, Nakashima S
611 - 614	Shallow nitrogen donor states in 4H-SiC investigated by photothermal ionization spectroscopy Chen CQ, Zeman J, Engelbrecht F, Peppermuller C, Helbig R, Martinez G
615 - 618	Characterization of silicon carbide using Raman spectroscopy Burton JC, Long FH, Khlebnikov Y, Khlebnikov I, Parker M, Sudarshan TS
619 - 622	Photoluminescence study of CVD layers highly doped with nitrogen Forsberg U, Henry A, Linnarsson MK, Janzen E
623 - 626	Low temperature photoluminescence of C-13 enriched SiC-crystals grown by the modified Lely method Sadowski H, Peppermuller C, Schulze N, Laube M, Pensl G, Helbig R
627 - 630	Sub-mu m scale photoluminescence image of SiC and GaN at a low temperature Yoshimoto M, Goto M, Saraie J, Kimoto T, Matsunami H
631 - 634	Vanadium-related center in 4H silicon carbide Magnusson B, Wagner M, Son NT, Janzen E
635 - 638	Spectroscopic investigation of vanadium acceptor level in 4H and 6H-SiC Lauer V, Bremond G, Souifi A, Guillot G, Chourou K, Madar R, Clerjaud B
639 - 642	Photoluminescence and DLTS measurements of 15MeV Erbium implanted 6H and 4H SiC Shishkin Y, Choyke WJ, Devaty RP, Achtziger N, Opfermann T, Witthuhn W
643 - 646	Electronic states of vacancies in 3C-and 4H-SiC Zywietz A, Furthmuller J, Bechstedt F
647 - 650	Pseudo-donors in SiC Egilsson T, Ivanov IG, Henry A, Janzen E
651 - 654	Metastability of a hydrogen-related defect in 6H-SiC Henry A, Egilsson T, Ivanov IG, Janzen E
655 - 658	Optical characterization of lattice damage and recovery in ion-implanted and pulsed excimer laser irradiated 4H-SiC Sands D, Key PH, Schlaf M, Walton CD, Anthony CJ, Uren MJ
659 - 662	Microscopic probing of Raman scattering and photoluminescence on C-Al ion co-implanted 6H-SiC Feng ZC, Chua SJ, Shen ZX, Tone K, Zhao JH
663 - 666	Confocal Raman microprobe of lattice damage in N+ implanted 6H-SiC Mestres N, Alsina F, Campos FJ, Pascual J, Morvan E, Godignon P, Millan J
667 - 670	Ion beam induced change in the linear optical properties of SiC Williams EK, Ila D, Poker DB, Hensley DK, Larkin DJ
671 - 674	Free carrier diffusion measurements in epitaxial 4H-SiC with a Fourier transient grating technique: Injection dependence Grivickas P, Linnros J, Grivickas V
675 - 678	Time-resolved photoluminescence study of bound and free excitons in 4H SiC Pozina G, Bergman JP, Hemmingsson C, Janzen E
679 - 682	Optical lifetime measurements in 4H SiC Shishkin Y, Devaty RP, Choyke WJ
683 - 686	Optical characterization of 4H-SiC p(+)n(-)n(+) structures applying time- and spectrally resolved emission microscopy Galeckas A, Linnros J, Breitholtz B
687 - 690	Electroluminescence from implanted and epitaxially grown pn-diodes Carlsson FHC, Storasta L, Hemmingsson C, Bergman JP, Janzen E
691 - 694	Avalanche breakdown electroluminescence in silicon carbide light emitting diodes Aboujja S, Carlone C, Houdayer A, Hinrichsen PF, Charles JP
695 - 698	Photon emission mechanisms in 6H and 4H-SiC MOSFETs Banc C, Bano E, Ouisse T, Scharnholz S, Schmid U, Wondrak W, Niemann E
699 - 702	Non-contact photovoltage measurements in SiC Koshka Y, Mazzola MS
703 - 706	Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide Capano MA, Cooper JA, Melloch MR, Saxler A, Mitchel WC
707 - 710	MicroRaman and Hall effect study of n-type bulk 4H-SiC Chafai M, Jimenez J, Martin E, Mitchel WC, Saxler A, Perrin R
711 - 714	Electrical properties of 3C-SiC grown on Si by CVD method using Si-2(CH3)(6) Masuda Y, Chen Y, Matsuura H, Harima H, Nishino S
715 - 718	Electrical and physical behavior of SiC layers on insulator (SiCOI) Hugonnard-Bruyere E, Letertre F, Di Cioccio L, von Bardeleben HJ, Cantin JL, Ouisse T, Billon T, Guillot G
719 - 724	Theoretical treatments of band edges in SiC polytypes at high carrier concentrations Lindefelt U, Persson C
725 - 728	A theoretical study of electron drift mobility anisotropy in n-type 4H-and 6H-SiC Velmre E, Udal A
729 - 732	Theoretical calculation of the electron Hall mobility in n-type 4H-and 6H-SiC Iwata H, Itoh KM
733 - 736	Hall scattering factor and electron mobility of 4H SiC: Measurements and numerical simulation Rutsch G, Devaty RP, Choyke WJ, Langer DW, Rowland LB, Niemann E, Wischmeyer F
737 - 740	Hall mobility of the electron inversion layer in 6H-SiC MOSFETs Saks NS, Mani SS, Agarwal AK, Hegde VS
741 - 744	Application and improvement of the spreading resistance method for p-type 6H-SIC Gebel T, Panknin D, Riehn R, Parascandola S, Skorupa W
745 - 748	Theoretical study of carrier freeze-out effects on admittance spectroscopy and frequency-dependent C-V measurements in SiC Los AV, Mazzola MS, Saddow SE
749 - 752	On the existence of deep levels of the accepters Ga and In and of the potential double accepters Zn and Cd in SiC Achtziger N, Grillenberger J, Uhrmacher M, Witthuhn W
753 - 756	Correlation between DLTS and photoluminescence in he-implanted 6H-SiC Frank T, Pensl G, Bai S, Devaty RP, Choyke WJ
757 - 760	Observation of deep levels in SiC by optical-isothermal capacitance transient spectroscopy Kobayashi S, Imai S, Hayami Y, Kushibe M, Shinohe T, Okushi H
761 - 764	Improved measurements of high-field drift velocity in silicon carbide Khan IA, Cooper JA
765 - 768	A full band Monte Carlo study of high field carrier transport in 4H-SiC Nilsson HE, Belotti E, Brennan KF, Hjelm M
769 - 772	Electron saturated vertical velocities in silicon carbide polytypes Sankin VI, Lepneva AA
773 - 776	High temperature effects on the terahertz mobility of hot electrons in 3C-SiC and 6H-SiC Caetano EWS, Bezerra EF, Lemos V, Freire VN, da Silva EF, da Costa JAP
777 - 780	Electron beam induced current investigation of high-voltage 4H silicon carbide diodes Osterman J, Hallen A, Jargelius M, Zimmermann U, Galeckas A, Breitholtz B
781 - 784	Measurement of charge carrier lifetime temperature-dependence in 4H-SiC power diodes Udal A, Velmre E
785 - 790	Donors and accepters in SiC-studies with EPR and ENDOR Spaeth JM
791 - 794	ESR spectrum of nitrogen in 6H SiC in the ground and excited states Kalabukhova EN, Lukin SN
795 - 798	Dopant-related complexes in SiC Gali A, Miro J, Deak P, Devaty RP, Choyke WJ
799 - 803	The spatial distribution of the electronic wave function of the shallow boron acceptor in 4H-and 6H-SiC van Duijn-Arnold A, Mol J, Verberk R, Schmidt J, Mokhov EN, Baranov PG
805 - 808	The electronic structure of the Be acceptor centers in 6H-SiC van Duijn-Arnold A, Schmidt J, Poluektov OG, Baranov PG, Mokhov EN
809 - 812	Electron paramagnetic resonance of the scandium acceptor in 4H and 6H silicon carbide Greulich-Weber S, Marz M, Spaeth JM, Mokhov EN, Kalabukhova EN
813 - 816	ESR study of delamination in H+ implanted silicon carbide Chowdhury EA, Seki T, Izumi T, Tanaka H, Hara T
817 - 820	Vacancies and their complexes with H in SiC Deak P, Gali A, Aradi B, Son NT, Janzen E, Choyke WJ
821 - 824	The carbon vacancy pair in 4H and 6H SiC Son NT, Hai PN, Shuja A, Chen WM, Lindstrom JL, Monemar B, Janzen E
825 - 828	Electron spin resonance in neutron-irradiated n-type 6H-silicon carbide Kanazawa S, Kimura I, Okada M, Nozaki T, Kanno I, Ishihara S, Watanabe M
831 - 836	Physics of SiC processing Pensl G, Afanas'ev VV, Bassler M, Frank T, Laube M, Weidner M
837 - 840	Polishing and surface characterization of SiC substrates Everson WJ, Snyder DW, Heydemann VD
841 - 844	Comparison of mechanical and chemomechanical polished SiC wafers using photon backscattering Mitchel WC, Brown J, Buckanan D, Bertke R, Malalingham K, Orazio FD, Pirouz P, Tseng HJR, Ramabadran UB, Roughani B
845 - 848	Damage-free surface modification of hexagonal silicon carbide wafers Chandler TC, Lari MB, Sudarshan TS
849 - 852	Nuclear transmutation doping of phosphorus into 6H-SiC Tamura S, Kimoto T, Matsunami H, Okada M, Kanazawa S, Kimura I
853 - 856	Radiation defects and doping of SiC with phosphorus by Nuclear Transmutation Doping (NTD) Heissenstein H, Sadowski H, Peppermuller C, Helbig R
857 - 860	Relationship between donor activation and defect annealing in 6H-SiC hot-implanted with phosphorus ions Ohshima T, Uedono A, Itoh H, Yoshikawa M, Kojima K, Okada S, Nashiyama I, Abe K, Tanigawa S, Frank T, Pensl G
861 - 864	Hot-implantation of phosphorus ions into 4H-SiC Imai S, Kobayashi S, Shinohe T, Fukuda K, Tanaka Y, Senzaki J, Tanoue H, Kobayashi N, Okushi H
865 - 868	Electrical characteristics and surface morphology for arsenic ion-implanted 4H-SiC at high temperature Senzaki J, Fukuda K, Imai S, Tanaka Y, Kobayashi N, Tanoue H, Okushi H, Arai K
869 - 872	Damage evolution in Al-implanted 4H SiC Hallen A, Persson POA, Kuznetsov AY, Hultman L, Svensson BG
873 - 876	Excimer laser annealing of ion-implanted 6H-silicon carbide Hishida Y, Watanabe M, Nakashima K, Eryu O
877 - 880	High concentration doping of 6H-SiC by ion implantation: Flash versus furnace annealing Panknin D, Wirth H, Anwand W, Brauer G, Skorupa W
881 - 884	Consequences of high-dose, high temperature Al+ implantation in 6H-SiC Stoemenos J, Pecz B, Heera V
885 - 888	Al and Al/C high dose implantation in 4H-SiC Bluet JM, Pernot J, Billon T, Contreras S, Michaud JF, Robert JL, Camassel J
889 - 892	Channeled implants in 6H silicon carbide Janson MS, Hallen A, Godignon P, Kuznetsov AY, Linnarsson MK, Morvan E, Svensson BG
893 - 896	Damage reduction in channeled ion implanted 6H-SiC Morvan E, Mestres N, Campos FJ, Pascual J, Hallen A, Linnarsson M, Kuznetsov AY
897 - 900	Ion beam induced nanocrystallization of SiC Hofgen A, Heera V, Mucklich A, Skorupa W
901 - 904	High temperature implant activation in 4H and 6H-SiC in a silane ambient to reduce step bunching Saddow SE, Williams J, Isaacs-Smith T, Capano MA, Cooper JA, Mazzola MS, Hsieh AJ, Casady JB
905 - 908	Characterization of implantation Layer in (1(1)over-bar-00) oriented 4H- and 6H-SiC Satoh M, Nakaike Y, Uchimura K, Kuriyama K
909 - 912	Electrical and structural properties of Al and B implanted 4H-SiC Tanaka Y, Kobayashi N, Okumura H, Suzuki R, Ohdaira T, Hasegawa M, Ogura M, Yoshida S, Tanoue H
913 - 916	Secondary defect distribution in high energy ion implanted 4H-SiC Ohno T, Kobayashi N
917 - 920	Coimplantation effects of (C and Si)/Ga in 6H-SiC Tanaka Y, Kobayashi N, Hasegawa M, Ogura M, Ishida Y, Yoshida S, Okumura H, Tanoue H
921 - 924	Improved annealing process for 6H-SiC p(+)-n junction creation by Al implantation Lazar M, Ottaviani L, Locatelli ML, Planson D, Canut B, Chante JP
925 - 928	Characteristics of n-p junction diodes made by double-implantations into SiC Tucker JB, Handy EM, Rao MV, Holland OW, Papanicolaou N, Jones KA
929 - 932	Reactivation of hydrogen-passivated aluminum acceptors in p-type SiC Hulsen C, Achtziger N, Reislohner U, Witthuhn W
933 - 936	Formation of passivated layers in p-type SiC by low energy ion implantation of hydrogen Achtziger N, Hulsen C, Janson M, Linnarsson MK, Svensson BG, Witthuhn W
937 - 940	Metal-contact enhanced incorporation of deuterium in 4H-and 6H-SiC Linnarsson MK, Spetz AL, Janson MS, Ekedahl LG, Karlsson S, Schoner A, Lundstrom I, Svensson BG
941 - 944	Transient-enhanced diffusion of boron in SiC Laube M, Pensl G
945 - 948	Selective doping of 6H-SiC by diffusion of boron Soloviev S, Gao Y, Khlebnikov II, Sudarshan TS
949 - 952	Ab initio study of intrinsic point defects and dopant-defect complexes in SiC: Application to boron diffusion Bockstedte M, Pankratov O
953 - 956	Beryllium implantation doping of silicon carbide Henkel T, Tanaka Y, Kobayashi N, Nishizawa S, Hishita S
957 - 960	Ion-channeling studies of interfaces and defect properties in silicon carbide Jiang W, Weber WJ
961 - 964	Formation of precipitates in 6H-SiC after oxygen implantation and subsequent annealing Pecz B, Klettke O, Pensl G, Stoemenos J
965 - 968	Microstructural evolution of radiation-induced defects in semi-insulating SiC during isochronal annealing Puff W, Balogh AG, Mascher P
969 - 972	Vacancy-type detects in proton-irradiated 6H-and 4H-SiC: A systematic study with positron annihilation techniques Puff W, Balogh AG, Mascher P
973 - 976	Deep centres appearing in 6H and 4H SiC after proton irradiation Lebedev AA, Davydov DV, Strel'chuk AM, Kuznetsov AN, Bogdanova EV, Kozlovski VV, Savkina NS
977 - 980	Radiation-induced conductivity and simultaneous photoconductivity suppression in 6H-SiC under 17 MeV proton irradiation Amekura H, Kishimoto N, Kono K
981 - 984	Study of contact formation by high temperature deposition of Ni on SiC Robbie K, Jemander ST, Lin N, Hallin C, Erlandsson R, Hansson GV, Madsen LD
985 - 988	Ohmic contact formation on n-type 6H-SiC using NiSi2 Nakamura T, Shimada H, Satoh M
989 - 992	Lowering the annealing temperature of Ni/SiC for ohmic contacts under N-2 gas, and application to a UV sensor Toda T, Ueda Y, Sawada M
993 - 996	Adhesion and microstructure of Ni contacts to 3C-SiC Kang SC, Shin MW
997 - 1000	Low resistance ohmic contacts to n-SiC using niobium Oder TN, Williams JR, Bryant KW, Bozack MJ, Crofton J
1001 - 1004	A comparison of single- and multi-layer ohmic contacts based on tantalum carbide on n-type and osmium on p-type silicon carbide at elevated temperatures Jang T, Rutsch G, Odekirk B, Porter LM
1005 - 1008	Improved ohmic contacts to 6H-SiC by pulsed laser processing Nakashima K, Eryu O, Ukai S, Yoshida K, Watanabe M
1009 - 1012	Al/Si ohmic contacts to p-type 4H-SiC for power devices Kassamakova L, Kakanakov R, Kassamakov I, Nordell N, Savage S, Svedberg EB, Madsen LD
1013 - 1016	Searching for device processing compatible ohmic contacts to implanted p-type 4H-SiC Luo YB, Yan F, Tone K, Zhao JH, Crofton J
1017 - 1020	Structural and morphological characterization of Al/Ti-based ohmic contacts on p-type 4H-SiC annealed under various conditions Vassilevski KV, Zekentes K, Constantinidis G, Papanicolaou N, Nikitina IP, Babanin AI
1021 - 1024	Thermal stability in vacuum and in air of Al/Ni/W based ohmic contacts to p-type SiC Liu S, Potts G, Scofield J
1025 - 1028	A UHV study of Ni/SiC Schottky barrier and ohmic contact formation Kestle A, Wilks SP, Dunstan PR, Pritchard M, Pope G, Koh A, Mawby PA
1029 - 1032	Fermi level pinning and Schottky barrier characteristics on reactively ion etched 4H-SiC Skromme BJ, Luckowski E, Moore K, Clemens S, Resnick D, Gehoski T, Ganser D
1033 - 1036	Real-time assessment of overlayer removal on 4H-SiC surfaces: Techniques and relevance to contact formation Edwards NV, Madsen LD, Robbie K, Powell GD, Jarrendahl K, Cobet C, Esser N, Richter W, Aspnes DE
1037 - 1040	Pre-growth treatment of 4H-SiC substrates by hydrogen etching at low pressure Masahara K, Ishida Y, Okumura H, Takahashi T, Kushibe M, Ohno T, Suzuki T, Tanaka T, Yoshida S, Arai K
1041 - 1044	SIC in-situ pre-growth etching: A thermodynamic study Neyret E, Di Cioccio L, Blanquet E, Raffy C, Pudda C, Billon T, Camassel J
1045 - 1048	The effect of in situ surface treatment on the growth of 3C-SiC thin films on 6H-SiC substrate - An x-ray triple crystal diffractometry and synchrotron x-ray topography study Chaudhuri J, George JT, Edgar JH, Xie ZY, Rek Z
1049 - 1052	Dry etching and metallization schemes in a GaN/SiC heterojunction device process Danielsson E, Zetterling CM, Ostling M, Lee SK, Linthicum KJ, Thomson DB, Nam OH, Davis RF
1053 - 1056	Demonstration of deep (80 mu m) RIE etching of SIC for MEMS and MMIC applications Sheridan DC, Casady JB, Ellis EC, Siergiej RR, Cressler JD, Strong RM, Urban WM, Valek WF, Seiler CF, Buhay H
1057 - 1060	Reactive ion etching in CF4/O-2 gas mixtures for fabricating SiC devices Imaizumi M, Tarui Y, Sugimoto H, Tanimura J, Takami T, Ozeki T
1061 - 1064	Electrochemical C-V profiling of p-type 6H-SiC Kayambaki M, Zekentes K
1065 - 1068	Electrically active traps at the 4H-SiC/SiO2 interface responsible for the limitation of the channel mobility Bassler M, Afanas'ev VV, Pensl G, Schulz M
1069 - 1072	Anomalously high density of interface states near the conduction band in SiO2/4H-SiC MOS devices Das MK, Um BS, Cooper JA
1073 - 1076	Effect of post-oxidation-annealing in hydrogen on SiO2/4H-SiC interface Suzuki S, Fukuda K, Okushi H, Nagai K, Sekigawa T, Yoshida S, Tanaka T, Arai K
1077 - 1080	Process dependence of inversion layer mobility in 4H-SiC devices Alok D, Arnold E, Egloff R
1081 - 1084	Controlled thermal oxidation of sacrificial silicon on 4H-SiC epilayer Koh A, Kestle A, Dunstan PR, Pritchard M, Wilks SP, Pope G, Mawby PA
1085 - 1088	Ozone treatment of SiC for improved performance of gas sensitive Schottky diodes Zangooie S, Arwin H, Lundstrom I, Spetz AL
1089 - 1092	Reliability and degradation of metal-oxide-semiconductor capacitors on 4H-and 6H-silicon carbide Treu M, Schorner R, Friedrichs P, Rupp R, Wiedenhofer A, Stephani D, Ryssel H
1093 - 1096	SiC devices with ONO stacked dielectrics Lipkin LA, Palmour JW
1097 - 1100	The effect of Si : C source ratio on SiO2/SiC interface state density for nitrogen doped 4H and 6H-SIC Chung GY, Tin CC, Won JH, Williams JR
1101 - 1104	Channel doped SiC-MOSFETs Ogino S, Oikawa T, Ueno K
1105 - 1108	Anisotropy of inversion channel mobility in 4H-and 6H-SIC MOSFETs on (11(2)over-bar0) face Yano H, Hirao T, Kimoto T, Matsunami H, Asano K, Sugawara Y
1109 - 1112	MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation Yano H, Kimoto T, Matsunami H, Bassler M, Pensl G
1113 - 1116	Interface trap profiles near the band edges in 6H-SiC MOSFETs Saks NS, Mani SS, Agarwal AK
1117 - 1120	Characterization of SIC MOS structures using conductance spectroscopy and capacitance voltage analysis Sveinbjornsson EO, Ahnoff M, Olafsson HO
1121 - 1124	Mobility in 6H-SiC n-channel MOSFETs Scozzie CJ, Lelis AJ, McLean FB
1125 - 1128	Effects of oxidation conditions on the concentration of carbon dangling bonds in oxidized 6H-SiC Macfarlane PJ, Zvanut ME
1129 - 1132	Effects of steam annealing on electrical characteristics of 3C-SiC metal-oxide-semiconductor structures Yoshikawa M, Kojima K, Ohshima T, Itoh H, Okada S, Ishida Y
1133 - 1136	Atomic-scale engineering of the SiC-SiO2 interface Pantelides ST, Duscher G, Di Ventra M, Buczko R, McDonald K, Huang MB, Weller RA, Baumvol I, Stedile FC, Radtke C, Pennycook SJ, Chung G, Tin CC, Williams JR, Won JH, Feldman LC
1137 - 1140	Comparison of high-temperature electrical characterizations of pulsed-laser deposited AlN on 6H- and 4H-SiC from 25 to 450 degrees C Lelis AJ, Scozzie CJ, McLean FB, Geil BR, Vispute RD, Venkatesan T
1141 - 1144	Molding-based thin film patterning techniques for SiC surface micromachining Song X, Guo S, Zorman CA, Wu CH, Yasseen AA, Mehregany M
1145 - 1148	Bulk micromachining of polycrystalline SiC using Si molds fabricated by deep reactive ion etching Rajan N, Zorman CA, Mehregany M
1149 - 1152	Preliminary investigation of SiC on silicon for biomedical applications Carter GE, Casady JB, Bonds J, Okhuysen ME, Scofield JD, Saddow SE
1155 - 1160	SiC and GaN high-voltage power switching devices Chow TP
1161 - 1166	Electrical impact of SiC structural crystal defects on high electric field devices Neudeck PG
1167 - 1170	Performance and reliability issues of SiC-Schottky diodes Rupp R, Treu M, Mauder A, Griebl E, Werner W, Bartsch W, Stephani D
1171 - 1174	Designing, physical simulation and fabrication of high-voltage (3.85 kV) 4H-SiC Schottky rectifiers processed on hot-wall and chimney CVD films Wahab Q, Ellison A, Zhang J, Forsberg U, Duranova E, Henry A, Madsen LD, Janzen E
1175 - 1178	Influence of epitaxial growth and substrate induced defects on the breakdown of high-voltage 4H-SiC Schottky diodes Wahab Q, Ellison A, Hallin C, Henry A, Di Persio J, Martinez R, Janzen E
1179 - 1182	A 2.8kV, forward drop JBS diode with low leakage Dahlquist F, Svedberg JO, Zetterling CM, Ostling M, Breitholtz B, Lendenmann H
1183 - 1186	3.6 kV 4H-SiC JBS diodes with low RonS Sugawara Y, Asano K, Saito R
1187 - 1190	Fabrication and testing of 1,000V-60A 4H-SiC MPS diodes in an inductive half-bridge circuit Tone K, Zhao JH, Weiner M, Pan M
1191 - 1194	Large contact Ti/4H-SiC Schottky diodes fabricated using standard silicon processing techniques Sudre C, Mooney MB, Leveugle C, O'Brien J, Lane WA
1195 - 1198	Optical beam induced current analysis of high-voltage 4H-SiC Schottky rectifiers Tsuji T, Asai R, Ueno K, Ogino S
1199 - 1202	Effect of plasma etching and sacrificial oxidation on 4H-SiC Schottky barrier diodes Morrison DJ, Pidduck AJ, Moore V, Wilding PJ, Hilton KP, Uren MJ, Johnson CM
1203 - 1206	4H-SiC device scaling development on repaired micropipe substrates Schattner TE, Casady JB, Smith MCD, Mazzola MS, Dimitriev VA, Rentakova SV, Saddow SE
1207 - 1210	Design and characterization of a SiC Schottky diode mixer Eriksson J, Ferdos F, Zirath H, Rorsman N
1211 - 1214	Breakdown voltage improvement of 4H-SiC Schottky diodes by a thin surface implant Khemka V, Chatty K, Chow TP, Gutmann RJ
1215 - 1218	DC and pulse characterizations of (600V) GH-SiC Schottky diode breakdown Torres A, Flament O, Musseau O, Billon T
1219 - 1222	GH-SiC Schottky barrier diodes with nearly ideal breakdown voltage Brezeanu G, Badila M, Millan J, Godignon P, Locatelli ML, Chante JP, Lebedev AA, Banu V
1223 - 1226	Lateral current spreading in SiC Schottky diodes using field-prate edge termination Zhang Q, Madangarli V, Tarplee M, Sudarshan TS
1227 - 1230	Characterization of Schottky contact on p-type 6H-SiC Kamimura K, Okada S, Ito H, Nakao M, Onuma Y
1231 - 1234	Computer simulation of p-type SiC Schottky diode using ATLAS Tarplee M, Madangarli V, Zhang Q, Palmer P, Sudarshan TS
1235 - 1238	Schottky barrier characteristics of 3C-SiC epilayers grown by low pressure chemical vapor deposition Ishida Y, Takahashi T, Okumura H, Sekigawa T, Yoshida S
1239 - 1242	Characterization of Au Schottky contacts on p-type 3C-SiC grown by low pressure chemical vapor deposition Kojima K, Yoshikawa M, Ohshima T, Itoh H, Okada S
1243 - 1246	Static and dynamic characteristics of 4H-SiC JFETs designed for different blocking categories Friedrichs P, Mitlehner H, Kaltschmidt R, Weinert U, Bartsch W, Hecht C, Dohnke KO, Weis B, Stephani D
1247 - 1250	Power density comparison between microwave power MESFET's processed on conductive and semi-insulating wafer Noblanc O, Arnodo C, Dua C, Chartier E, Brylinski C
1251 - 1254	Surface induced instabilities in 4H-SiC microwave MESFETs Hilton KP, Uren MJ, Hayes DG, Wilding PJ, Johnson HK, Guest JJ, Smith BH
1255 - 1258	Characterization of SiC MESFETs on conducting substrates Nilsson PA, Saroukhan AM, Svedberg JO, Konstantinov A, Karlsson S, Adas C, Gustafsson U, Harris C, Rorsman N, Eriksson J, Zirath H
1259 - 1262	Fabrication, characterization, and modeling of SiC MESFETs Rorsman N, Eriksson J, Zirath T
1263 - 1266	Physical simulations on the operation of 4H-SiC microwave power transistors Jonsson R, Wahab Q, Rudner S
1267 - 1270	Properties of transmission lines on various SiC substrates Royet AS, Cabon B, Ouisse T, Billon T
1271 - 1274	High temperature, high current, 4H-SiC Accu-DMOSFET Singh R, Ryu SH, Palmour JW
1275 - 1278	4H-SiC self-aligned implant-diffused structure for power DMOSFETs Suvorov AV, Lipkin LA, Johnson GM, Singh R, Palmour JW
1279 - 1282	Nitrogen vs. phosphorus as implant species for high-voltage lateral RESURF MOSFETs on 4H-SiC Chatty K, Banerjee S, Chow TP, Gutmann RJ
1283 - 1286	Effect of off-angle from Si (0001) surface and polytype on surface morphology of SiC and C-V characteristics of SiC MOS structures Fukuda K, Suzuki S, Senzaki J, Kosugi R, Nagai K, Sekigawa T, Okushi H, Yoshida S, Tanaka T, Arai K
1287 - 1290	Accumulation-mode SiC power MOSFET design issues Wang Y, Weitzel C, Bhatnagar M
1291 - 1294	Progress towards a manufacturable SiC mixed analog-digital integrated circuit technology Brown D, McGrath D, Nielsen M, Krishnamurthy N, Kretchmer JW, Ghezzo M
1295 - 1298	Rugged power MOSFETs in 6H-SiC with blocking capability up to 1800V Schorner R, Friedrichs P, Peters D, Mitlehner H, Weis B, Stephani D
1299 - 1302	Influence of post-oxidation annealing on electrical characteristics in 6H-SiC MOSFETs Ohshima T, Yoshikawa M, Itoh H, Kojima K, Okada S, Nashiyama I
1303 - 1306	Effect of boron implantation on 6H-SiC N-MOSFET interface properties Godignon P, Jorda X, Vellvehi M, Berberich S, Montserrat J, Ottaviani L
1307 - 1310	Investigation of lateral RESURF, 6H-SiC MOSFETs Agarwal AK, Saks NS, Mani SS, Hegde VS, Sanger PA
1311 - 1314	Highly durable SiC nMISFET's at 450 degrees C Zhu WJ, Wang XW, Ma TP, Tucker JB, Rao MV
1315 - 1318	SiC MISFETs with MBE-grown AlN gate dielectric Zetterling CM, Ostling M, Yano H, Kimoto T, Matsunami H, Linthicum K, Davis RF
1319 - 1322	Steady-state and transient forward current-voltage characteristics of 5.5 kV 4H-silicon carbide diodes at high and superhigh current densities Dyakonova NV, Ivanov PA, Kozlov VA, Levinshtein ME, Palmour JW, Rumyantsev SL, Singh R
1323 - 1326	Current voltage characteristics of high-voltage 4H silicon carbide diodes Zimmermann U, Hallen A, Breitholtz B
1327 - 1330	Dynamic avalanche and trapped charge in 4H-SiC diodes Domeij M, Breitholtz B, Aberg D, Martinez A, Bergman P
1331 - 1334	Comparison of nitrogen and phosphorus implanted, planar, high-voltage 4H-SiC junction rectifiers Chatty K, Khemka V, Chow TP, Gutmann RJ
1335 - 1338	Dynamic and steady-state description of incomplete ionization in 4H-SiC power diodes under turn-off Martinez A, Lindefelt U
1339 - 1342	Simulation and fabrication of high-voltage 4H-SiC diodes with multiple floating guard ring termination Sheridan DC, Niu G, Merrett JN, Cressler JD, Ellis C, Tin CC, Siergiej RR
1343 - 1346	Transient characterization of SiCP-N diode Keskar N, Shenai K, Neudeck PG
1347 - 1350	Formation of deep pn junctions by MeV Al- and B-ion implantations into 4H-SiC and reverse characteristics Miyamoto N, Saitoh A, Kimoto T, Matsunami H, Hishida Y, Watanabe M
1351 - 1354	Defect modeling and simulation of 4-H SiCP-N diode Keskar N, Shenai K, Neudeck P
1355 - 1358	6H-SiC diodes with cellular structure to avoid micropipe effects Badila M, Brezeanu G, Chante JP, Locatelli ML, Millan J, Godignon P, Lebedev AA, Lungu P, Banu V
1359 - 1362	A closed-form analytical solution of 6H-SiC punch-through junction breakdown voltages Wang J, Williams BW, Madathil SE, Desouza MM
1363 - 1366	Study of the breakdown voltage of protected or non-protected 6H-SiC bipolar diodes by OBIC characterisation Isoird K, Ottaviani L, Locatelli ML, Planson D, Raynaud C, Bevilacqua P, Chante JP
1367 - 1370	Al/C/B Co-implanted high-voltage 4H-SiC PiN junction rectifiers Fedison JB, Li Z, Khemka V, Ramungul N, Chow TP, Ghezzo M, Kretchmer JW, Elasser A
1371 - 1374	6.2kV 4H-SiC pin diode with low forward voltage drop Sugawara Y, Asano K, Singh R, Palmour JW
1375 - 1378	Theoretical and experimental study of 4H-SiC junction edge termination Li XQ, Tone K, Cao LH, Alexandrov P, Fursin L, Zhao JH
1379 - 1382	Monte Carlo simulation of 4H-SiC IMPATT diodes Gruzinskis V, Luo Y, Zhao J, Weiner M, Pan M, Shiktorov P, Starikov E
1383 - 1386	Demonstration of high performance visible-blind 4H-SiC avalanche photodiodes Yan F, Luo YB, Zhao JH, Dries C, Olsen G
1387 - 1390	2600 V, 12 A, 4H-SiC, asymmetrical Gate Turn Off (GTO) Thyristor development Agarwal A, Ryu SH, Singh R, Kordina O, Palmour JW
1391 - 1394	Factors influencing the design and performance of 4H-SiC GTO thyristors Fedison JB, Chow TP, Ghezzo M, Kretchmer JW, Nielsen MC
1395 - 1398	4H-SiC gate turn-off thyristor designs for very high power control Shah PB, Geil BR, Jones KA, Griffin TE, Derenge MA
1399 - 1402	Fabrication and characterization of 4H-SiC GTOs and diodes Fursin L, Tone K, Alexandrov P, Luo Y, Cao L, Zhao J, Weiner M, Pan M
1403 - 1406	100 kHz operation of SiC Junction Controlled Thyristor (JCT) switches used in an all-SIC PWM inverter Seshadri S, Hall WB, Kotvas JC, Sanger PA
1407 - 1410	SiC-power rectifiers Held R, Fullmann M, Niemann E
1411 - 1414	Comparison of 5 kV 4H-SiC N-channel and P-channel IGBTs Wang J, Williams BW, Madathil SE, Desouza MM
1415 - 1418	Design and simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC Tang Y, Ramungul N, Chow TP
1419 - 1422	TCAD evaluation of double implanted 4H-SiC power bipolar transistors Adachi K, Johnson CM, Ortolland S, Wright NG, O'Neill AG
1423 - 1426	Operation of a 2500V 150A Si-IGBT/SiC diode module Lendenmann H, Johansson N, Mou D, Frischholz M, Astrand B, Isberg P, Ovren C
1427 - 1430	High-power P-channel UMOS IGBT's in 6H-SiC for high temperature operation Ryu SH, Singh R, Palmour JW
1431 - 1434	High temperature 4H-SiC FET for gas sensing applications Savage SM, Konstantinov A, Saroukhan AM, Harris CI
1435 - 1438	High temperature gas sensors based on catalytic metal field effect transistors Svenningstorp H, Uneus L, Tobias P, Lundstrom I, Ekedahl LG, Spetz AL
1439 - 1442	SiC-based gas sensor development Hunter GW, Neudeck PG, Gray M, Androjna D, Chen LY, Hoffman RW, Liu CC, Wu QH
1443 - 1446	Fabrication of SiC hydrogen sensor by Pd-implantation Muntele CI, Ila D, Williams EK, Poker DB, Hensley DK, Larkin DJ, Muntele I
1447 - 1450	Epitaxial 6H-SiC layers as defectors of nuclear particles Lebedev AA, Savkina NS, Ivanov AM, Strokan NB, Davydov DV
1453 - 1458	GaN quantum dots on sapphire and Si substrates Morkoc H, Reshchikov MA, Baski A, Nathan MI
1459 - 1462	Achievement of MBE-grown GaN heteroepitaxial layer with (0001) Ga-polarity and improved quality by In exposure Ide T, Shimizu M, Shen XQ, Hara S, Okumura H, Nemoto T
1463 - 1466	Crack-free, single-crystal GaN grown on 100 mm diameter silicon Liaw HM, Venugopal R, Wan J, Doyle R, Fejes P, Loboda MJ, Melloch MR
1467 - 1470	3C-SiC pseudosubstrates for the growth of cubic GaN Aboughe-Nze P, Chassagne T, Chaussende D, Monteil Y, Cauwet F, Bustarret E, Deneuville A, Bentoumi G, Martinez-Guerrerro E, Daudin B, Feuillet G
1471 - 1476	Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films Davis RF, Nam OH, Zheleva TS, Gehrke T, Linthicum KJ, Rajagopal P
1477 - 1482	Pendeoepitaxy of GaN and InGaN LEDs on SiC Kong HS, Edmond J, Doverspike K, Emerson D, Bulman G, Haberern K, Dieringer H, Slater D
1483 - 1486	Comparison of different Epitaxial Lateral Overgrowth GaN structures using SiO2 and tungsten mask by cathodoluminescence microscopy and micro-Raman spectroscopy Bertram F, Riemann T, Rudloff D, Christen J, Kaschner A, Hoffmann A, Hiramatsu K
1487 - 1490	High quality GaN on Si(111) using (AlN/GaN)(x) superlattice and maskless ELO Lahreche H, Bousquet V, Laugt M, Tottereau O, Vennegues P, Beaumont B, Gibart P
1491 - 1494	Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition Gehrke T, Lenthicum KJ, Rajagopal P, Preble EA, Carlson EP, Robin BM, Davis RF
1495 - 1498	Reduction of defects on GaN and AlGaN by In-doping in metalorganic vapor phase epitaxy Kachi T, Itoh K, Tomita K, Tadano H
1499 - 1502	Comparison of AlGaN and GaN grown on various substrates: Step flow growth on LiGaO2 at low growth temperature Kang S, Doolittle WA, Stock SR, Brown AS
1503 - 1506	Pulsed laser deposition: A novel growth technique for wide-bandgap semiconductor research Vispute RD, Enck R, Patel A, Ming B, Sharma RP, Venkatesan T, Scozzie CJ, Lelis A, McLean FB, Zheleva T, Jones KA
1507 - 1510	Investigation into the film growth of AlN on SiC by Low Pressure Chemical Vapour Deposition Williams V, Pernot E, Ramberg E, Blanquet E, Bluet JM, Madar R
1511 - 1514	AlN epitaxial films grown by ECR plasma assisted metalorganic chemical vapor deposition under controlled plasma conditions in afterglow region Yasui K, Hoshino S, Akahane T
1515 - 1518	Silicon carbide substrates for epitaxial growth of aluminium nitride by chloride-transport process Avrov DD, Dorozhkin SI, Lebedev AO, Rastegaev VP, Tairov YM
1519 - 1522	Low-energy-ion-assisted reactive sputter deposition of epitaxial AlN thin films on 6H-SiC Tungasmita S, Persson POA, Jarrendahl K, Hultman L, Birch J
1523 - 1526	Pulsed laser deposition of oriented aluminum nitride thin films and their application Meinschien J, Falk F, Stafast H
1527 - 1530	State of art of c-BN growth physics: Substrate effect Masri P, Guiot E, Mortet V, Laridjani MR, Averous M
1533 - 1536	Adsorption and desorption of hydrogen on Ga-rich GaN(0001) Yang Y, Bellitto VJ, Thoms BD, Koleske DD, Wickenden AE, Henry RL
1537 - 1540	Extremely efficient electron stimulated desorption of hydrogen from GaN(0001) Bellitto VJ, Thoms BD, Koleske DD, Wickenden AE, Henry RL
1541 - 1544	The reaction of oxygen with GaN(0001) Thoms BD, Bellitto VJ, Yang Y, Koleske DD, Wickenden AE, Henry RL
1545 - 1548	Observation of cubic GaN/AlN heterointerface formation by RHEED in plasma-assisted molecular beam epitaxy Okumura H, Koizumi T, Ishida Y, Cho SH, Shen XQ, Yoshida S
1549 - 1552	Analysis of dislocation densities and nanopipe formation in MBE-grown AlN-layers Ebling DG, Kirste L, Rattunde M, Portmann J, Brenn R, Benz KW, Tillmann K
1553 - 1556	Correlation between optical and structural properties of thick GaN films grown by direct reaction of Ga and NH3 Nahm KS, Yang SH, Ahn SH, Suh EK
1557 - 1560	Improved electron emission from defective diamond film deposited by CVD method Show Y, Matsukawa T, Ito H, Iwase M, Izumi T
1561 - 1566	Theory of impurities and defects in III-nitrides: Vacancies in GaN and related materials Van de Walle CG
1567 - 1570	Nonabrupt interface related exciton energy shifts in GaN/Al(x)Gal(1-x)N quantum dots Filho JR, Lemos V, de Sousa JS, Farias GA, Freire VN
1571 - 1574	Radiative recombination in InGaN/GaN multiple quantum wells Bergman JP, Monemar B, Pozina G, Sernelius BE, Holtz PO, Amano H, Akasaki I
1575 - 1578	Impact of epitaxial lateral overgrowth on the recombination dynamics in GaN determined by time resolved micro-photoluminescence spectroscopy Holst J, Kaschner A, Hoffmann A, Broser I, Fischer P, Bertram F, Riemann T, Christen J, Hiramatsu K, Shibata T, Sawaki N
1579 - 1582	Structured ultrafast carrier drift velocity in photoexcited zincblende GaN Rodrigues CG, Vasconcellos AR, Luzzi R, Lemos V, Freire VN
1583 - 1586	Characterization of thick GaN layers using guided optical waves Ciplys D, Rimeika R, Khan MA, Yang JW, Gaska R, Shur MS
1587 - 1590	Polarization memory in band edge luminescence from free standing gallium nitride Kompan ME, Raevki SD, Safronov IN, Shabanov IY, Zhilyaev YV
1591 - 1594	Enhancement of UV-sensitivity in GaN/GaAs heterostructures by Si-doping Lisker M, Witte H, Krtschil A, Christen J, As DJ, Schottker B, Lischka K
1595 - 1598	Resonant Raman scattering and the emission process in zincblende-InxGa1-xN Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Frey T, As DJ, Schikora D, Lischka K
1599 - 1602	A comparison of aluminum nitride freely nucleated and seeded on 6H-silicon carbide Edgar JH, Robins LH, Coatney SE, Liu L, Chaudhuri J, Ignatiev K, Rek Z
1603 - 1606	Low frequency noise in n-GaN with high electron mobility Rumyantsev SL, Look DC, Levinshtein ME, Khan MA, Simin G, Adivarahan V, Molnar RJ, Shur MS
1609 - 1614	Role of alloy fluctuations in InGaN-based LEDs and laser diodes Nakamura S
1615 - 1618	Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN Suvkhanov A, Parikh N, Usov I, Hunn J, Withrow S, Thomson D, Gehrke T, Davis RF, Krasnobaev LY
1619 - 1622	Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing Prakash S, Tan LS, Ng KM, Raman A, Chua SJ, Wee ATS, Lim SL
1623 - 1626	Time-resolved photoluminescence measurements of InGaN light-emitting diodes Pophristic M, Long FH, Tran C, Ferguson IT
1627 - 1630	GaNPIN photodiodes grown on sapphire and SiC substrates Smith GM, Chriss MF, Tamweber FD, Boutros KS, Flynn JS, Keogh DM
1631 - 1634	Temperature dependent performance of GaN Schottky diode rectifiers Cao XA, Dang GT, Zhang AP, Ren F, Pearton SJ, Lee CM, Chuo CC, Chyi JI, Chi GC, Han J, Chu SNG, Wilson RG
1635 - 1638	Monte Carlo simulation of Gunn effect and microwave power generation at 240 GHz in n(+)-n(-)-n-n(+) GaN structures Zhao JH, Gruzinskis V, Weiner M, Pan M, Shiktorov P, Starikov E
1639 - 1642	DC and large-signal RF performance of recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process Lee WS, Chung KW, Shin MW
1643 - 1646	Improved 10-GHz operation of GaN/AlGaN HEMTs on silicon carbide Sheppard ST, Doverspike K, Leonard M, Pribble WL, Allen ST, Palmour JW
1647 - 1650	Characterization of AlGaN/GaN HEMT devices grown by MBE MacElwee TW, Bardwell JA, Tang H, Webb JB
1651 - 1654	A comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes Vacas J, Lahreche H, Monteiro T, Gaspar C, Pereira E, Brylinski C, di Forte-Poisson MA
1655 - 1658	Electrical characteristics of 6H-SiC/GaN isotype n-n heterojunctions Kuznetsov NI, Nikolaev AE, Melnik YV, Nikitina IP