3069 - 3074 |
Threading Dislocations in GaAs Grown with Free Sidewalls on Si Mesas Knall J, Romano LT, Krusor BS, Biegelsen DK, Bringans RD |
3075 - 3083 |
Growth of Beryllium Doped AlxGa1-xAs GaAs Mirrors for Vertical-Cavity Surface-Emitting Lasers Peters MG, Thibeault BJ, Young DB, Gossard AC, Coldren LA |
3084 - 3089 |
Nearly Ideal Characteristics of GaAs Metal-Insulator-Semiconductor Diodes by Atomic Layer Passivation Wada Y, Wada K |
3090 - 3094 |
Surface Oxidation Sf Selenium Treated GaAs(100) Scimeca T, Watanabe Y, Maeda F, Berrigan R, Oshima M |
3095 - 3102 |
Si-Indiffusion and O-Outdiffusion Processes at Si/SiO2/GaAs-Oxides/GaAs Structures - Implications in SiO2 Formation and GaAs Regrowth Jimenez I, Sacedon JL |
3103 - 3106 |
Electroreflectance of Ag/GaAs Wang DP |
3107 - 3111 |
Dead-Time-Free Selective Dry-Etching of GaAs/AlGaAs Using BCl3/Chf3 Plasma Takenaka H, Oishi Y, Ueda D |
3112 - 3117 |
Continuous Ultra-Dry Process for Enhancing the Reliability of Ultrathin Silicon-Oxide Films in Metal-Oxide Semiconductors Yamada H |
3118 - 3137 |
Investigation of Electron Source and Ion Flux Uniformity in High Plasma-Density Inductively-Coupled Etching Tools Using 2-Dimensional Modeling Ventzek PL, Grapperhaus M, Kushner MJ |
3138 - 3144 |
Profile Simulation of Electron-Cyclotron-Resonance Planarization of an Interlevel Dielectric Labun AH |
3145 - 3148 |
Morphology of Anodically Etched Si(111) Surfaces - A Structural Comparison of NH4F Versus HF Etching Houbertz R, Memmert U, Behm RJ |
3149 - 3159 |
Solid Source Diffusion from Agglomerating Silicide Sources .2. Experimental Results and Analysis Tsai JY, Osburn CM, Canovai CA |
3160 - 3165 |
Advanced Fabrication Techniques of 3-Dimensional Microstructures for Future Electronic Devices Ugajin R, Ishibashi A, Mori Y |
3166 - 3170 |
Nanofabrication on Electron-Beam Resist Using Scanning-Tunneling-Microscopy Archer A, Hetrick JM, Nayfeh MH, Adesida I |
3171 - 3175 |
Fabrication of Noble-Metal Nanoconstrictions and Observation Conductance Fluctuations Scheer E, Vonlohneysen H, Hein H |
3176 - 3181 |
Atomic-Force Microscope Tip Radius Needed for Accurate Imaging of Thin-Film Surfaces Westra KL, Thomson DJ |
3182 - 3186 |
Microfabrication of Arrays of Scanning Electron-Microscopes Feinerman AD, Crewe DA, Crewe AV |
3187 - 3190 |
Reliable Tip Preparation for High-Resolution Scanning-Tunneling-Microscopy Albrektsen O, Salemink HW, Morch KA, Tholen AR |
3191 - 3195 |
Reduced Effects of Laser Illumination on Field-Emission Due to the Finite Duration of Quantum Tunneling Hagmann MJ |
3196 - 3201 |
Submicron Patterning of Thin Cobalt Films for Magnetic Storage New RM, Pease RF, White RL |
3202 - 3207 |
Structure of Fe/Delta-Mn Superlattices Grown by Molecular-Beam Epitaxy Pohl J, Malang EU, Scheele B, Kohler J, Luxsteiner MC, Bucher E |
3208 - 3213 |
Reactive Ion Etching of RuO2, Thin-Films Using the Gas-Mixture O-2 Cf3Cfh2 Pan W, Desu SB |
3214 - 3217 |
Effects of Sulfur Passivation and Rapid Thermal Annealing on the Electrical-Properties of InP Metal-Insulator-Semiconductor Schottky Diodes Eftekhari G |
3218 - 3219 |
SiC Microcomponents via Reaction of C-60 with Silicon Balooch M, Hamza AV |
3220 - 3222 |
Elimination of Long-Term Calibration Drift in Molecular-Beam Epitaxy by Cooling the Source Flange Larkins EC, Thaden H, Betsche H, Eichin G, Ralston JD |
3235 - 3235 |
Papers from the 38th International-Symposium on Electron, Ion, and Photon Beams - Preface Adesida I |
3237 - 3241 |
Ultra-Large-Scale Integration Device Scaling and Reliability Hu CM |
3242 - 3246 |
Digital Micromirror Device and Its Application to Projection Displays Sampsell JB |
3247 - 3250 |
Evaluation of Overlay Accuracy for the X-Ray Stepper Toxs-1 Hirano R, Higashiki T, Nomura H, Kuwabara O, Nishizaka T, Uchida N |
3251 - 3255 |
Design and Test of a Through-the-Mask Alignment Sensor for a Vertical Stage X-Ray Aligner Nelson M, Kreuzer JL, Gallatin G |
3256 - 3260 |
Overlay Accuracy of a Synchrotron-Radiation Stepper Evaluated by 2-Mask Double-Exposure Fukuda M, Suzuki M, Kanai M, Tsuyuzaki H, Shibayama A, Ishihara S |
3261 - 3264 |
Subnanometer Alignment System for X-Ray-Lithography Zhou H, Feldman M, Bass R |
3265 - 3269 |
Combined Lithographies for the Reduction of Stitching Errors in Lithography Koops HW, Kretz J, Weber M |
3270 - 3274 |
Atomic-Hydrogen Resist Process with Electron-Beam Lithography for Selective Al Patterning Masu K, Tsubouchi K |
3275 - 3279 |
Deep-Ultraviolet Damage to Fused-Silica Schenker R, Schermerhorn P, Oldham WG |
3280 - 3284 |
Fabrication of Atomic-Scale Metallic Microstructures by Retarding-Field Focused Ion-Beams Woodham RG, Ahmed H |
3285 - 3288 |
Micromechanical Structures for Electron-Beam and Ion-Beam Irradiation Phenomena Ogo I, Macdonald NC |
3289 - 3293 |
Locally Focused Electron-Beam Deposition Shaw JL, Gray HF |
3294 - 3299 |
3-Dimensional Laser Direct Writing - Applications to Multichip Modules Nassuphis N, Mathews RH, Palmacci ST, Ehrlich DJ |
3300 - 3305 |
Pulse-Time Modulated Electron-Cyclotron-Resonance Plasma-Etching for Highly Selective, Highly Anisotropic, and Less-Charging Polycrystalline Silicon Patterning Samukawa S, Terada K |
3306 - 3310 |
Reflectance Modeling for in-Situ Dry Etch Monitoring of Bulk SiO2 and III-V Multilayer Structures Hicks SE, Parkes W, Wilkinson JA, Wilkinson CD |
3311 - 3316 |
Effect of Superlattices on the Low-Energy Ion-Induced Damage in GaAs/Al(Ga)as Structures - Channeling or Diffusion Green DL, Hu EL, Stoffel NG |
3317 - 3321 |
Characterization of Chemically Assisted Ion-Beam Etching of InP Youtsey C, Grundbacher R, Panepucci R, Adesida I, Caneau C |
3322 - 3326 |
Reactive Ion Etching-Induced Damage in InAlAs/InGaAs Heterostructure Field-Effect Transistors Processed in HBr Plasma Fay P, Agarwala S, Scafidi C, Adesida I, Caneau C, Bhat R |
3327 - 3331 |
High-Aspect-Ratio Dry-Etching for Microchannel Plates Snider GL, Then AM, Seave RJ, Tasker GW |
3332 - 3336 |
Process Technology for InGaAs/InAlAs Modulation-Doped Field-Effect Transistors on InP Substrates Fink T, Raynor B, Haupt M, Kohler K, Braunstein J, Grun N, Hornung J |
3337 - 3341 |
Investigation of Modulated Radio-Frequency Plasma-Etching of GaAs Using Langmuir Probes Law VJ, Braithwaite NS, Ingram SG, Clary DC, Jones GA |
3342 - 3346 |
Plasma-Immersed Oxygen-Ion Implantation of Iron-Doped Glass for Nonmetallic Magnetic Hard Disks Zhang L, Booske JH, Cooper RF, Shohet JL, Jacobs JR, Anderson FS, Goeckner MJ, Wicksberg EB, Was G |
3347 - 3350 |
Electron-Cyclotron-Resonance Ion Stream Etching with High Uniformity and Accuracy for Metal-Oxide-Semiconductor Gate Fabrication Takahashi C, Matsuo S |
3351 - 3355 |
Effects of Etch Chemistry on SF6-Based Tungsten Etching by Electron-Cyclotron-Resonance Reactive Ion Etching Eddy CR, Kosakowski J, Shirey LM, Dobisz EA, Rhee KW, Chu W, Foster KW, Marrian CR, Peckerar MC |
3356 - 3362 |
Basis of Macroscopic and Microscopic Surface Shaping and Smoothing by Plasma-Assisted Chemical Etching Zarowin CB |
3363 - 3368 |
Etched Profile Distortions in High-Density Electron-Cyclotron-Resonance Plasma Yoneda M, Maruyama T, Fujiwara N |
3369 - 3373 |
Effects of Cation Diffusion on the Monolayer Control of Chemical Beam Etching Chiu TH, Williams MD, Tsang WT, Kapre RM |
3374 - 3377 |
Reactive-Ion-Beam Etching of InP in a Chlorine-Hydrogen Mixture Vawter GA, Ashby CI |
3378 - 3381 |
Radical Beam Ion-Beam Etching of InAlAs/InP Using Cl-2 Yu DG, Hu EL, Hasnain G |
3382 - 3387 |
Evaluation of Surface Damage on GaAs Etched with an Electron-Cyclotron-Resonance Source Ko KK, Pang SW, Brock T, Cole MW, Casas LM |
3388 - 3392 |
Magnetically Confined Plasma Reactive Ion Etching of GaAs/AlGaAs/AlAs Quantum Nanostructures Song YP, Wang PD, Torres CM, Wilkinson CD |
3393 - 3398 |
Dynamic Corrections in Mebes-4500 Pearcepercy H, Prior R, Abboud F, Benveniste A, Gasiorek L, Lubin M, Raymond F |
3399 - 3403 |
Electron-Beam Cell Projection Lithography - Its Accuracy and Its Throughput Someda Y, Satoh H, Sohda Y, Nakayama Y, Saitou N, Itoh H, Sasaki M |
3404 - 3408 |
Deflector and Correction Coil Calibrations in an Electron-Beam Block Exposure System Yamada A, Sakamoto K, Yamazaki S, Kobayashi K, Sago S, Oono M, Watanabe H, Yasuda H |
3409 - 3412 |
100 kv Electron-Beam Lithography Using a Schottky Field-Emission Source Koek BH, Chisholm T, Somers J, Davey J, Romijn J, Vonrun AJ |
3413 - 3417 |
Evaluation of Zr/O/W Schottky Emitters for Microcolumn Applications Kim HS, Kratschmer E, Yu ML, Thomson MG, Chang TH |
3418 - 3424 |
Electron-Beam Technology - The Other End of the Spectrum Bakish R |
3425 - 3430 |
High-Aspect-Ratio Aligned Multilayer Microstructure Fabrication Lee KY, Rishton SA, Chang TH |
3431 - 3435 |
Emission Characteristics of Ultrasharp Cold Field Emitters Yu ML, Hussey BW, Kim HS, Chang TH |
3436 - 3439 |
Overlay Enhancement with Product-Specific Emulation in Electron-Beam Lithography Tools Puisto D, Sturans M, Lawliss M |
3440 - 3443 |
Application of a High-Throughput Electron-Beam System for 0.3 Mu-M Large-Scale Integration Mizuno F, Kato M, Hayakawa H, Sato K, Hasegawa K, Sakitani Y, Saitou N, Murai F, Shiraishi H, Uchino SI |
3444 - 3448 |
Lithographic Performance of a Negative Resist Under Scattering with Angular Limitation for Projection Electron Lithography Exposure at 100 keV Tarascon RG, Bolan K, Blakey M, Camarda RM, Farrow RC, Fetter LA, Huggins HA, Kraus JS, Liddle JA, Mixon DA, Novembre AE, Watson GP, Berger SD |
3449 - 3454 |
Interior Area Removal Method for Pyramid Lee SY, Cook BD |
3455 - 3459 |
Spatial-Frequency Filtering Using Multiple-Pass Printing Ye J, Berglund CN, Pease RF |
3460 - 3464 |
Electron-Beam Lithography of Curved Structures with an Enhanced Vector-Scan Pattern Generator Supporting Conic-Based Primitives Vasey F, Prongue D, Rothuizen H, Vettiger P |
3465 - 3472 |
Address Data Reduction and Lithography Performance of Graybeam Writing Strategies for Raster Scan Mask Generation Muray A, Abboud F, Raymond F, Berglund CN |
3473 - 3477 |
Surface Imaging by Silylation for Low-Voltage Electron-Beam Lithography Bottcher M, Bauch L, Stolberg I |
3478 - 3482 |
100 kv Ghost Electron-Beam Proximity Correction on Tungsten X-Ray Masks Gesley MA, Mccord MA |
3483 - 3488 |
Efficiency Enhancement of Monte-Carlo Simulation of Particle-Beam Interaction by Separation of Stochastic and Continuum Contributions Groves TR |
3489 - 3493 |
Coulomb Effects in Retarding-Field Lenses Brodie AD |
3494 - 3497 |
Coplanar Multiple-Ring Electrostatic Particle-Beam Lenses Moran MJ |
3498 - 3502 |
Electron-Electron Scattering in Microcolumns Thomson MG |
3503 - 3507 |
Sub-40 nm Resolution 1 keV Scanning Tunneling Microscope Field-Emission Microcolumn Kratschmer E, Kim HS, Thomson MG, Lee KY, Rishton SA, Yu ML, Chang TH |
3508 - 3512 |
An Analytical Model of Stochastic Interaction Effects in Projection Systems Using a Nearest-Neighbor Approach Mkrtchyan MM, Liddle JA, Berger SD, Harriott LR, Schwartz AM, Gibson JM |
3513 - 3517 |
Novel Electrostatic Column for Ion Projection Lithography Chalupka A, Stengl G, Buschbeck H, Lammer G, Vonach H, Fischer R, Hammel E, Loschner H, Nowak R, Wolf P, Finkelstein W, Hill RW, Berry IL, Harriott LR, Melngailis J, Randall JN, Wolfe JC, Stroh H, Wollnik H, Mondelli AA, Petillo JJ, Leung K |
3518 - 3522 |
Minimum Feature Sizes and Ion-Beam Profile for a Focused Ion-Beam System with Post-Objective Lens Retarding and Acceleration Mode Kieslich A, Reithmaier JP, Forchel A |
3523 - 3527 |
CoSi2 Microstructures by Means of a High-Current Focused Ion-Beam Bischoff L, Teichert J, Hesse E, Panknin D, Skorupa W |
3528 - 3532 |
Stress-Induced Pattern-Placement Errors in Thin Membrane Masks Liddle JA, Volkert CA |
3533 - 3538 |
Experimental Investigation of Stochastic Space-Charge Effects on Pattern Resolution in Ion Projection Lithography Systems Hammel E, Chalupka A, Fegerl J, Fischer R, Lammer G, Loschner H, Malek L, Nowak R, Stengl G, Vonach H, Wolf P, Brunger WH, Buchmann LM, Torkler M, Cekan E, Fallmann W, Paschke F, Stangl G, Thalinger F, Berry IL, Harriott LR, Finkelstein W, Hill RW |
3539 - 3542 |
Contrast of Ion-Beam Proximity Printing with Nonideal Masks Stumbo DP, Wolfe JC |
3543 - 3546 |
Pattern Distortions in Stencil Masks Randall JN |
3547 - 3549 |
Ion Projection Lithography over Wafer Topography Brunger WH, Buchmann LM, Torkler MA, Finkelstein W |
3550 - 3554 |
An Industrial Plasma Process for Avoiding Charge Effect Romand P, Weill A, Panabiere JP, Prola A |
3555 - 3560 |
Secondary-Electron Line Scans over High-Resolution Resist Images - Theoretical and Experimental Investigation of Induced Local Electrical-Field Effects Grella L, Difabrizio E, Gentili M, Baciocchi M, Mastrogiacomo L, Maggiora R, Capodicci L |
3561 - 3566 |
Design of an Atomic-Force Microscope with Interferometric Position Control Schneir J, Mcwaid TH, Alexander J, Wilfley BP |
3567 - 3570 |
Edge Position Measurement with a Scanning Probe Microscope Griffith JE, Marchman HM, Hopkins LC |
3571 - 3575 |
Force Probe Characterization Using Silicon 3-Dimensional Structures Formed by Focused Ion-Beam Lithography Edenfeld KM, Jarausch KF, Stark TJ, Griffis DP, Russell PE |
3576 - 3579 |
Real-Time Observations of Extreme-Ultraviolet Aerial Images by Fluorescence Microimaging Lafontaine B, White DL, Wood OR, Macdowell AA, Tan ZQ, Taylor GN, Tennant DM, Hulbert SL |
3580 - 3584 |
Yaw Compensation for an Electron-Beam Lithography System Innes R |
3585 - 3590 |
Nanometer-Scale Dimensional Metrology for Advanced Lithography Marchman HM, Griffith JE, Guo JZ, Frackoviak J, Celler GK |
3591 - 3594 |
Highly Accurate Critical Dimension Measurement for Sub-0.5-Mu-M Devices Yamashita H, Nakajima K, Nozue H |
3595 - 3599 |
Inspection of Optical Phase-Shifting Masks with an Automated Electron-Beam System Brodie AD, Chen ZW, Jau J, Meisburger D, Grenon B |
3600 - 3606 |
Diffractive Techniques for Lithographic Process Monitoring and Control Naqvi SS, Zaidi SH, Brueck SR, Mcneil JR |
3607 - 3610 |
Nanometer-Scale Patterning of High-T-C Superconductors for Josephson Junction-Based Digital Circuits Wendt JR, Plut TA, Corless RF, Martens JS, Berkowitz S, Char K, Johansson M, Hou SY, Phillips JM |
3611 - 3613 |
Fabrication Using X-Ray Nanolithography and Measurement of Coulomb-Blockade in a Variable-Sized Quantum-Dot Burkhardt M, Smith HI, Antoniadis DA, Orlando TP, Melloch MR, Rhee KW, Peckerar MC |
3614 - 3618 |
Silicon Point Contacts - Nanofabrication, Molecular-Beam Epitaxial-Growth, and Transport Measurements Maes JW, Caro J, Werner K, Radelaar S, Kozub VI, Zandbergen HW |
3619 - 3622 |
Fabrication and Characterization of Single-Electron Transistors and Traps Ji L, Dresselhaus PD, Han SY, Lin K, Zheng W, Lukens JE |
3623 - 3625 |
Fabrication of Nanostructures in Algasb InAs Using Electron-Beam Lithography and Chemically Assisted Ion-Beam Etching Arafa M, Youtsey C, Grundbacher R, Adesida I, Klem J |
3626 - 3630 |
Writing Strategies of Circular Gratings for Surface-Emitting Lasers Using Focused Ion-Beam (X-Y Coordinate) and Electron-Beam (Polar Coordinate) Lithography Fallahi M, Templeton IM, Chatenoud F, Champion G, Dion M, Barber R |
3631 - 3634 |
15 Nanometer Features by Sidewall Processing and Pattern Transfer Randall JN, Newell BL |
3635 - 3638 |
High-Efficiency Diffractive Coupling Lenses by 3-Dimensional Profiling with Electron-Beam Lithography and Reactive Ion Etching Stemmer A, Zarschizky H, Knapek E, Lefranc G, Mayerhofer F |
3639 - 3642 |
Fabrication of Single-Domain Magnetic Pillar Array of 35 nm Diameter and 65 Gbits/in(2) Density Krauss PR, Fischer PB, Chou SY |
3643 - 3647 |
Multiple-Level Phase Gratings Fabricated Using Focused Ion-Beam Milling and Electron-Beam Lithography Shank SM, Chen FT, Skvarla M, Craighead HG, Cook P, Bussjager R, Haas F, Honey DA |
3648 - 3652 |
Patterning a 50-nm Period Grating Using Soft-X-Ray Spatial-Frequency Multiplication Wei M, Attwood DT, Gustafson TK, Anderson EH |
3653 - 3657 |
Low-Voltage Electron-Beam Lithography on GaAs Substrates for Quantum-Wire Fabrication Steffen R, Faller F, Forchel A |
3658 - 3662 |
Luminescence Spectroscopy of Dry-Etched Single Dots and Wires Hubner B, Jacobs B, Greus C, Zengerle R, Forchel A |
3663 - 3667 |
Electron-Beam Lithography with Monolayers of Alkylthiols and Alkylsiloxanes Lercel MJ, Redinbo GF, Pardo FD, Rooks M, Tiberio RC, Simpson P, Craighead HG, Sheen CW, Parikh AN, Allara DL |
3668 - 3672 |
Electron-Beam Lithography for the Fabrication of Air-Bridged, Submicron Schottky Collectors Muller RE, Martin SC, Smith RP, Allen SA, Reddy M, Bhattacharya U, Rodwell MJ |
3673 - 3676 |
Sub-0.1-Mu-M T-Shaped Gate Fabrication Technology Using Mixing-Layer Sidewalls in a Double-Layer Resist System Samoto N, Miura I, Makino Y, Yamanoguchi K |
3677 - 3680 |
Progress in Mask Technology for Ion-Implantation Based Nanofabrication Burkard M, Griesinger UA, Menschig A, Schweizer H, Klein H, Bohm G, Trankle G, Weimann G |
3681 - 3684 |
Fabrication of Arrays of Nanometer-Size Test Structures for Scanning Probe Microscope Tips Characterization Bogdanov AL, Erts D, Nilsson B, Olin H |
3685 - 3688 |
High-Resolution Definition of Buried InGaAs/InP Wires by Selective Thermal Kerkel K, Oshinowo J, Forchel A, Weber J, Laube G, Gyuro I, Zielinski E |
3689 - 3694 |
Advances in Near-Field Holographic Grating Mask Technology Tennant DM, Dreyer KF, Feder K, Gnall RP, Koch TL, Koren U, Miller BI, Vartuli C, Young MG |
3695 - 3698 |
Study of Nanoscale Magnetic-Structures Fabricated Using Electron-Beam Lithography and Quantum Magnetic Disk Chou SY, Wei M, Krauss PR, Fischer PB |
3699 - 3703 |
In-Situ GaAs/AlGaAs Patterning Using a Thin Epitaxial InGaAs Layer Mask as a Negative-Type Electron-Beam Resist in Cl-2 Gas Kohmoto S, Sugimoto Y, Takado N, Asakawa K |
3704 - 3707 |
Luminescence Enhancement of InGaAs/InP Surface Quantum-Wells by Room-Temperature Ion-Gun Hydrogenation Chang YL, Tan IH, Reaves C, Hu E, Merz J, Denbaars S |
3708 - 3711 |
Electron-Beam Fabrication and Focused Ion-Beam Inspection of Submicron Structured Diffractive Optical-Elements Dix C, Mckee PF, Thurlow AR, Towers JR, Wood DC, Dawes NJ, Whitney JT |
3712 - 3715 |
Reduced Electron Transmission in Au/GaAs Diodes Damaged by Focused Ion-Beam Implantation Studied by Ballistic-Electron-Emission Microscopy Mcnabb JW, Skvarla M, Craighead HG |
3716 - 3719 |
Atomic Desorption and Readsorption of Chlorine on a Si(111) 7X7 Surface with a Scanning Tunneling Microscope Baba M, Matsui S |
3720 - 3724 |
25 nm Chromium-Oxide Lines by Scanning Tunneling Lithography in Air Song HJ, Rack MJ, Abugharbieh K, Lee SY, Khan V, Ferry DK, Allee DR |
3725 - 3730 |
Proximal Probe Study of Self-Assembled Monolayer Resist Materials Perkins FK, Dobisz EA, Brandow SL, Koloski TS, Calvert JM, Rhee KW, Kosakowski JE, Marrian CR |
3731 - 3734 |
Quantitative Study of Metal-Oxide-Semiconductor Field-Effect Transistor Damage-Induced by Scanning Tunneling Microscope Lithography Fayfield T, Higman TK |
3735 - 3740 |
Nanometer-Scale Patterning and Oxidation of Silicon Surfaces with an Ultrahigh-Vacuum Scanning Tunneling Microscope Lyding JW, Abeln GC, Shen TC, Wang C, Tucker JR |
3741 - 3745 |
Spatial-Phase-Locked Electron-Beam Lithography and X-Ray-Lithography Fabricating First-Order Gratings on Rib Wave-Guides Wong VV, Ferrera J, Damask JN, Carter JM, Moon EE, Haus HA, Smith HI, Rishton S |
3746 - 3749 |
Laterally Coupled Distributed-Feedback Laser Fabricated with Electron-Beam Lithography and Chemically Assisted Ion-Beam Etching Tiberio RC, Chapman PF, Martin RD, Forouhar S, Lang RJ |
3750 - 3754 |
Fabrication and Characterization of InAlAs InGaAs Striped-Channel Modulation-Doped Field-Effect Transistors Grundbacher R, Fay P, Adesida I |
3755 - 3759 |
Nanostructure Fabrication and the Science Using Focused Ion-Beams Fujisawa T, Bever T, Hirayama Y, Tarucha S |
3760 - 3764 |
A Novel Technique for Shifter Void Defect Repair by a Focused Ion-Beam Tool Jinbo H, Takushima K, Saito T, Ashida I, Tanaka Y |
3765 - 3772 |
Molybdenum Silicide Based Attenuated Phase-Shift Masks Jonckheere R, Ronse K, Popa O, Vandenhove L |
3773 - 3777 |
An Increased Effective Depth of Focus at Contact Mask for Nonvolatile Memories Using an Enhanced Planarization Scheme Cork C, Bacchetta M |
3778 - 3782 |
Defocus Asymmetry in Projection Printing Barouch E, Hollerbach U, Orszag SA |
3783 - 3792 |
Extending the Limits of Optical Lithography for Arbitrary Mask Layouts Using Attenuated Phase-Shifting Masks with Optimized Illumination Ronse K, Pforr R, Baik KH, Jonckheere R, Vandenhove L |
3793 - 3798 |
Impact of Lens Aberrations on Phase-Shifting Masks Kostelak RL, Raab EL, Vaidya S |
3799 - 3803 |
Practical Phase-Shifting Mask Technology for 0.3 Mu-M Large-Scale Integrations Mizuno F, Moriuchi N, Hoga M, Koizumi Y, Suga O, Nakaune H, Kamiyama K, Hasegawa N, Murai F, Itoh F |
3804 - 3808 |
New Approach of rim Phase-Shifting Mask for High-Density Circuit Layout Dao G, Tam N, Hainsey R, Qian QD, Neff J, Nasreesfahani B, Deeter T, Fujimoto H, Troccolo P |
3809 - 3813 |
Quarter-Micron Lithography with a Gapped Markle-Dyson System Owen G, Borkholder D, Knorr C, Markle DA, Pease RF |
3814 - 3819 |
Characterization of a 193 nm Optical Lithography System for 0.18 Mu-M and Below Grenville A, Owen G, Pease RF |
3820 - 3825 |
Characterization of an Expanded-Field Schwarzschild Objective for Extreme-Ultraviolet Lithography Kubiak GD, Tichenor DA, Raychaudhuri AK, Malinowski ME, Stulen RH, Haney SJ, Berger KW, Nissen RP, Wilkerson GA, Paul PH, Bjorkholm JE, Fetter LA, Freeman RR, Himel MD, Macdowell AA, Tennant DM, Wood OR, Waskiewicz WK, White DL, Windt DL, Jewell TE |
3826 - 3832 |
Multilayer Facilities Required for Extreme-Ultraviolet Lithography Windt DL, Waskiewicz WK |
3833 - 3840 |
Imaging of Extreme-Ultraviolet Lithographic Masks with Programmed Substrate Defects Nguyen KB, Mizota T, Haga T, Kinoshita H, Attwood DT |
3841 - 3845 |
Wavelength Dependence of the Resist Sidewall Angle in Extreme-Ultraviolet Lithography Wood OR, Bjorkholm JE, Fetter L, Himel MD, Tennant DM, Macdowell AA, Lafontaine B, Griffith JE, Taylor GN, Waskiewicz WK, Windt DL, Kortright JB, Gullikson EK, Nguyen K |
3846 - 3850 |
Fabrication of Diffractive Optical-Components for an Extreme-Ultraviolet Shearing Interferometer Spector SJ, Tennant DM, Tan Z, Bjorkholm JE |
3851 - 3856 |
Negative-Tone Deep-Ultraviolet Resists Containing Benzylic Cross-Linkers - Experimental and Simulation Studies of the Cross-Linking Process Zenk AM, Neureuther AR, Lee SM, Frechet JM |
3857 - 3862 |
Thermal and Acid-Catalyzed Deprotection Kinetics in Candidate Deep-Ultraviolet Resist Materials Wallraff G, Hutchinson J, Hinsberg W, Houle F, Seidel P, Johnson R, Oldham W |
3863 - 3867 |
Effect of Photo Acid Generator Concentration on the Process Latitude of a Chemically Amplified Resist Petrillo KE, Pomerene AT, Babich ED, Seeger DE, Hofer D, Breyta G, Ito H |
3868 - 3873 |
Application of Real-Time Infrared-Spectroscopy to Monitoring the Kinetics of Chemically Amplified Resists Howes GR, Gamsky CJ, Taylor JW |
3874 - 3878 |
High-Speed Single-Layer-Resist Process and Energy-Dependent Aspect Ratios for 0.2-Mu-M Electron-Beam Lithography Murai F, Yamamoto J, Yamaguchi H, Okazaki S, Sato K, Hasegawa K, Hayakawa H |
3879 - 3883 |
Acid Generation Process by Radiation-Induced Reaction in Chemically Amplified Resist Films Watanabe T, Yamashita Y, Kozawa T, Yoshida Y, Tagawa S |
3884 - 3887 |
Photoresist Channel-Constrained Deposition of Electroless Metallization on Ligating Self-Assembled Films Calvert JM, Calabrese GS, Bohland JF, Chen MS, Dressick WJ, Dulcey CS, Georger JH, Kosakowski J, Pavelcheck EK, Rhee KW, Shirey LM |
3888 - 3894 |
Effect of Acid Diffusion on Performance in Positive Deep-Ultraviolet Resists Fedynyshyn TH, Thackeray JW, Georger JH, Denison MD |
3895 - 3899 |
Nanometer-Scale Imaging Characteristics of Novolak Resin-Based Chemical Amplification Negative Resist Systems and Molecular-Weight Distribution Effects of the Resin Matrix Shiraishi H, Yoshimura T, Sakamizu T, Ueno T, Okazaki S |
3900 - 3904 |
Modeling and Simulations of a Positive Chemically Amplified Photoresist for X-Ray-Lithography Krasnoperova AA, Khan M, Rhyner S, Taylor JW, Zhu Y, Cerrina F |
3905 - 3908 |
High-Speed Positive X-Ray Resist Suitable for Precise Replication of Sub-0.25-Mu-M Features Ban H, Nakamura J, Deguchi K, Tanaka A |
3909 - 3913 |
Plasma-Polymerized All-Dry Resist Process for 0.25 Mu-M Photolithography Joubert O, Weidman T, Joshi A, Cirelli R, Stein S, Lee JT, Vaidya S |
3914 - 3918 |
Quarter-Micron Lithography with a Wet-Silylated and Dry-Developed Commercial Photoresist Gogolides E, Tzevelekis D, Tsoi E, Hatzakis M, Goethals AM, Baik KH, Vanroey F |
3919 - 3924 |
Positive-Tone Silylated, Dry-Developed, Deep-Ultraviolet Resist with 0.2 Mu-M Resolution Hutton RS, Stein SM, Boyce CH, Cirelli RA, Taylor GN, Baiocchi FA, Kovalchick J, Wheeler DR |
3925 - 3929 |
Comparative-Evaluation of Chemically Amplified Resists for Electron-Beam Top Surface Imaging Use Irmscher M, Hofflinger B, Springer R |
3930 - 3935 |
Updated System Model for X-Ray-Lithography Khan M, Mohammad L, Xiao J, Ocola L, Cerrina F |
3936 - 3942 |
Comparison of Image Shortening Effects in X-Ray and Optical Lithography Dellaguardia R, Maldonado JR, Prein F, Zell T, Kluwe A, Oertel HK |
3943 - 3948 |
Application of Proximity Synchrotron Orbital Radiation Lithography and Deep-Ultraviolet Phase-Shifted-Mask Lithography to Sub-Quarter-Micron Complimentary Metal-Oxide-Semiconductor Devices Liebmann L, Ferguson R, Molless A, Lamberti A |
3949 - 3953 |
Applicability Test for Synchrotron-Radiation X-Ray-Lithography in 64-MB Dynamic Random-Access Memory Fabrication Processes Fujii K, Yoshihara T, Tanaka Y, Suzuki K, Nakajima T, Miyatake T, Orita E, Ito K |
3954 - 3958 |
Fabrication of Controlled Slope Attenuated Phase-Shift X-Ray Masks for 250 nm Synchrotron Lithography Gentili M, Difabrizio E, Grella L, Baciocchi M, Mastrogiacomo L, Maggiora R, Xiao J, Cerrina F |
3959 - 3964 |
50-nm X-Ray-Lithography Using Synchrotron-Radiation Chen Y, Kupka RK, Rousseaux F, Carcenac F, Decanini D, Ravet MF, Launois H |
3965 - 3969 |
Printability of Sub-150 nm Features in X-Ray-Lithography - Theory and Experiments Hector SD, Wong VV, Smith HI, Mccord MA, Rhee KW |
3970 - 3974 |
Fabrication of 150-nm Gate-Length High-Electron-Mobility Transistors Using X-Ray-Lithography Haghirigosnet AM, Lafontaine H, Jin Y, Rousseaux F, Chaker M, Pepin H, Launois H |
3975 - 3978 |
Novel Technique for the Separation of Mechanical-Properties and Intrinsic Stress of Pre-Irradiated and Post-Irradiated Membranes Chen HT, Engelstad RL, Cerrina F |
3979 - 3985 |
High-Performance Multilevel Blazed X-Ray Microscopy Fresnel Zone Plates - Fabricated Using X-Ray-Lithography Difabrizio E, Gentili M, Grella L, Baciocchi M, Krasnoperova A, Cerrina F, Yun W, Lai B, Gluskin E |
3986 - 3989 |
Parametric Modeling at Resist-Substrate Interfaces Ocola LE, Cerrina F |
3990 - 3994 |
Effect of Brightener Concentration on the Thermal Distortion of Gold Plated X-Ray Masks Dauksher WJ, Resnick DJ, Seese PA, Cummings KD, Yanof AW, Johnson WA |
3995 - 4000 |
Accelerated Radiation-Damage Studies of Antireflection Materials on SiC X-Ray Mask Membrane Shoki T, Ohkubo R, Kosuga H, Yamaguchi Y, Annaka N, Wells GM, Yamazaki K, Cerrina F |
4001 - 4004 |
Sputtering of Fibrous-Structured Low-Stress Ta Films for X-Ray Masks Yoshihara T, Suzuki K |
4005 - 4008 |
Experimental-Determination of the Effective Lithographic Contrast for X-Ray Masks Maldonado JR |
4009 - 4012 |
Deep-Etch X-Ray-Lithography at the Advanced Light-Source - First Results Malek CK, Jackson K, Brennen RA, Hecht MH, Bonivert WD, Hruby J |
4013 - 4017 |
Synchrotron-Radiation X-Ray-Lithography Beamline Optics Alignment Using the Hartmann Method Chen G, Yamazaki K, Waldo W, Welnak J, Wells GM, Cerrina F |
4018 - 4023 |
Novel Single Mirror Condenser for X-Ray-Lithography Beam Lines Xiao JB, Cerrina F, Rippstein RP |
4024 - 4027 |
Uniform-Stress Tungsten on X-Ray Mask Membranes via He-Backside Temperature Homogenization Mondol M, Li HY, Owen G, Smith HI |
4028 - 4032 |
Evaluation of Temperature Rise and Thermal Distortions of X-Ray Mask for Synchrotron-Radiation Lithography Yamazaki K, Satoh F, Fujii K, Tanaka Y, Yoshihara T |
4033 - 4037 |
Temperature Uniformity Across an X-Ray Mask Membrane During Resist Baking Resnick DJ, Cummings KD, Johnson WA, Chen HT, Choi B, Engelstad RL |
4038 - 4043 |
Modeling Image-Formation - Application to Mask Optimization Xiao JB, Khan M, Nachman R, Wallace J, Chen Z, Cerrina F |
4044 - 4050 |
Wavelength Dependence of Exposure Window and Resist Profile in X-Ray-Lithography Guo JZ, Celler GK, Maldonado JR, Hector SD |
4051 - 4054 |
High-Performance Self-Aligned Sub-100 nm Metal-Oxide-Semiconductor Field-Effect Transistors Using X-Ray-Lithography Yang IY, Hu H, Su LT, Wong VV, Burkhardt M, Moon EE, Carter JM, Antoniadis DA, Smith HI, Rhee KW, Chu W |